CN116147793A - Temperature measuring chip, chip structure and manufacturing method - Google Patents

Abstract

The invention relates to a temperature measuring chip, a chip structure and a manufacturing method, which comprises the following steps: a heat transfer substrate, one side of which is provided with a thermosensitive element in contact with the heat transfer substrate, the thermosensitive element being used for converting a temperature signal into an electric signal; the metal electrode is fixedly arranged on the heat transfer substrate and is electrically connected with the thermosensitive element. The temperature measuring chip is provided with the heat transfer substrate, the platy heat transfer substrate can be better attached to the chip to be measured, and the heat transfer substrate can transfer the heat of the chip to be measured to the thermosensitive element, so that the thermosensitive element converts a temperature signal into an electric signal and can be transmitted out through the metal electrode to measure the temperature of the chip to be measured.

Description

Temperature measuring chip, chip structure and manufacturing method

Technical Field

The invention relates to the technical field of chip testing, in particular to a temperature measuring chip, a chip structure and a manufacturing method.

Background

At present, for chip temperature measurement, a thermistor is generally placed beside a chip, or a thermocouple electrode is directly attached to the surface of the chip, and then the chip temperature is characterized by the temperature change of the thermocouple electrode through fixing with conductive adhesive.

In the related art, the conventional thermistor has high precision, but is placed at a position far from the chip, so that the characterized temperature is the temperature at the position far from the chip and the actual temperature of the chip is greatly different; the thermocouple has high precision and quick response, but the biggest defect is that: the technology level of attaching the thermocouple electrode to the surface of the chip is very dependent on personnel; the electrode metal and the chip surface are high in bonding degree, the temperature is accurate, the response is fast, if the bonding angle of the thermocouple electrode and the chip is large, the surface gap is large, the temperature measurement response is slow, the error is large, and the effect is poor.

Therefore, there is a need to design a new temperature measuring chip, chip structure and manufacturing method to overcome the above-mentioned problems.

Disclosure of Invention

The embodiment of the invention provides a temperature measuring chip, a chip structure and a manufacturing method, which are used for solving the problems that the temperature measuring difference is large by using a thermistor in the related technology, and a thermocouple is more dependent on the technical level of personnel attaching.

In a first aspect, a temperature measurement chip is provided, which includes: a heat transfer substrate, one side of which is provided with a thermosensitive element in contact with the heat transfer substrate, the thermosensitive element being used for converting a temperature signal into an electric signal; the metal electrode is fixedly arranged on the heat transfer substrate and is electrically connected with the thermosensitive element.

In some embodiments, the material of the heat transfer substrate is diamond.

In some embodiments, the thermal element is a thermistor or a thermal PN junction.

In some embodiments, a passivation layer is disposed on a side of the thermal element remote from the heat transfer substrate; and a passivation layer is arranged on one side of the metal electrode far away from the thermosensitive element.

In a second aspect, a chip structure is provided, comprising: the temperature measuring chip is attached to one side of the measured chip, and comprises: a heat transfer substrate, one side of which is provided with a thermosensitive element in contact with the heat transfer substrate, the thermosensitive element being used for converting a temperature signal into an electric signal; the metal electrode is fixedly arranged on the heat transfer substrate and is electrically connected with the thermosensitive element.

In some embodiments, the heat transfer substrate is attached to the chip under test by pressure welding or pressure sintering.

In a third aspect, a method for manufacturing a temperature measurement chip is provided, which includes the following steps: a thermosensitive element is fixedly arranged on one side of the heat transfer substrate, wherein the thermosensitive element is used for converting a temperature signal into an electric signal; and a metal electrode is fixedly arranged on the heat transfer substrate, so that the metal electrode is electrically connected with the thermosensitive element.

In some embodiments, the fixing a thermal element on one side of the heat transfer substrate includes: manufacturing an epitaxial layer on the heat transfer substrate; etching the epitaxial layer to form a first cavity; and filling a thermosensitive material into the first cavity to form the thermosensitive element.

In some embodiments, the fixing a metal electrode on the heat transfer substrate to electrically connect the metal electrode with the thermal element includes: coating photoresist on the epitaxial layer, and photoetching the photoresist to form an exposed area; etching the exposed area to form a second cavity; and filling a metal material into the second cavity to form a metal electrode.

In a fourth aspect, a method for manufacturing a chip structure is provided, comprising the steps of: a thermosensitive element is fixedly arranged on one side of the heat transfer substrate, wherein the thermosensitive element is used for converting a temperature signal into an electric signal; a metal electrode is fixedly arranged on the heat transfer substrate, so that the metal electrode is electrically connected with the thermosensitive element to form a temperature measuring chip; and the temperature measuring chip is stuck to the heating concentration position of the chip to be measured, and is fixed to the chip to be measured in a pressure welding or pressure sintering mode.

The technical scheme provided by the invention has the beneficial effects that:

the embodiment of the invention provides a temperature measuring chip, a chip structure and a manufacturing method, because the temperature measuring chip is provided with a heat transfer substrate, the plate-shaped heat transfer substrate can be better attached to a chip to be measured, and the heat transfer substrate can transfer the heat of the chip to be measured to a thermosensitive element, so that the thermosensitive element converts a temperature signal into an electric signal and can be transmitted out through a metal electrode to carry out temperature measurement on the chip to be measured, therefore, compared with the case that a thermistor is arranged at intervals to carry out temperature measurement, the thermosensitive element is indirectly contacted with the chip to be measured, the real temperature difference between the thermosensitive element and the chip to be measured is smaller, and the heat transfer substrate is favorable for better attachment to the chip to be measured, the technical level requirement on personnel attachment is lower, and errors can be further reduced.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic diagram of a temperature measurement chip according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of an epitaxial layer disposed on a heat transfer substrate according to an embodiment of the present invention;

FIG. 3 is a schematic diagram of a first photolithography configuration according to an embodiment of the present invention;

FIG. 4 is a schematic diagram of a first etching structure according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of a heat transfer substrate with a thermosensitive element formed thereon according to an embodiment of the present invention;

FIG. 6 is a schematic diagram of a second photolithography configuration according to embodiments of the present invention;

FIG. 7 is a schematic diagram of a second etching structure according to an embodiment of the present invention;

fig. 8 is a schematic structural diagram of a metal electrode formed on a heat transfer substrate according to an embodiment of the present invention;

FIG. 9 is a schematic diagram of a third photolithography configuration according to embodiments of the present invention;

FIG. 10 is a schematic diagram of a third etching structure according to an embodiment of the present invention;

fig. 11 is a schematic structural diagram of a passivation layer formed on one side of a metal electrode according to an embodiment of the present invention;

fig. 12 is a schematic structural diagram of a secondary epitaxy provided in an embodiment of the present invention;

FIG. 13 is a schematic diagram of a fourth photolithography configuration according to embodiments of the present invention;

FIG. 14 is a schematic diagram of a fourth etching structure according to an embodiment of the present invention;

FIG. 15 is a schematic view of a passivation layer formed over a thermal element according to an embodiment of the present invention;

FIG. 16 is a schematic diagram of a structure after pickling according to an embodiment of the present invention;

FIG. 17 is a schematic diagram of a structure of a plurality of temperature measurement chips formed on a heat transfer substrate according to an embodiment of the present invention;

fig. 18 is a schematic structural diagram of a chip structure according to an embodiment of the present invention.

In the figure:

100. a temperature measuring chip;

1. a heat transfer substrate; 2. a thermosensitive element; 3. a metal electrode; 4. a bonding wire; 5. a passivation layer; 6. an epitaxial layer; 7. a photoresist; 8. a semiconductor thin film;

91. a first cavity; 92. a second cavity; 93. a third cavity; 94. a fourth cavity;

200. the chip to be tested.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

The embodiment of the invention provides a temperature measuring chip, a chip structure and a manufacturing method, which can solve the problems that the temperature measuring difference is large by using a thermistor and the thermocouple is more dependent on the technical level of personnel attaching in the related technology.

Referring to fig. 1, a temperature measurement chip 100 according to an embodiment of the present invention may include: a heat transfer substrate 1, wherein one side of the heat transfer substrate 1 is provided with a heat sensitive element 2 contacting the heat transfer substrate 1, wherein the contact can be understood as direct contact or indirect contact, in this embodiment, the heat sensitive element 2 is preferably provided in direct contact with the heat transfer substrate 1, and the heat sensitive element 2 can be fixed on the heat transfer substrate 1; the heat-sensitive element 2 is used for converting a temperature signal into an electrical signal, that is, the heat-sensitive element 2 can sense the temperature transmitted by the heat transfer substrate 1 and convert the temperature signal into the electrical signal so as to facilitate digital display; the metal electrode 3 is fixedly arranged on the heat transfer substrate 1, the metal electrode 3 is electrically connected with the thermosensitive element 2, and the electric signal converted by the thermosensitive element 2 can be output through the metal electrode 3; further, the metal electrode 3 may be connected to an external circuit to obtain a resistance-time curve, and a temperature-time curve may be obtained through data operation processing, so that the temperature change of the chip 200 to be measured may be analyzed.

In the embodiment of the invention, since the heat transfer substrate 1 is arranged on the temperature measuring chip 100, the plate-shaped heat transfer substrate 1 can be better attached to the chip 200 to be measured, and the heat transfer substrate 1 can transfer the heat of the chip 200 to be measured to the heat sensitive element 2, so that the heat sensitive element 2 converts a temperature signal into an electric signal and can be transmitted out through the metal electrode 3 to perform temperature measurement on the chip 200 to be measured, therefore, the heat sensitive element 2 is indirectly contacted with the chip 200 to be measured, the heat sensitive element 1 can sense the real temperature of the chip 200 to be measured, and the thermistor in the related art is placed at a position far away from the chip 200 to be measured, and is not contacted with the chip 200 to be measured, compared with the case of temperature measurement by arranging the thermistor at intervals, the temperature measuring chip 100 can be contacted with the chip 200 to be measured, the real temperature difference between the chip 200 to be measured is smaller, and the arranged heat transfer substrate 1 is favorable for better attaching with the chip 200 to be measured, the technical level requirement for personnel attaching is lower, and errors can be further reduced. The temperature measuring chip 100 provided by the embodiment of the invention can realize accurate and rapid temperature measurement.

Further, referring to fig. 18, in some embodiments, the metal electrodes 3 may be connected with bonding wires 4, through which electrical signals are led out, and one metal electrode 3 may be provided at each of opposite sides of each of the thermosensitive elements 2, with both metal electrodes 3 being connected with the bonding wires 4.

In some alternative embodiments, the material of the heat transfer substrate 1 is preferably diamond, and the thermal conductivity of the diamond is 1000-2000kW/K, while the thermal conductivity of copper/tin/Si is 400 or less, and the thermal conductivity of the common ceramic is about 30.

The key point of the temperature measurement of the chip 200 to be measured is the temperature measurement precision and the response speed, and for the temperature measurement precision, the problem of the thermal contact surface needs to be solved.

From the thermal resistance r=l/(λs), where λ is the thermal conductivity, L is the material thickness or length, and S is the heat transfer area, it can be seen that the thermal resistance of diamond is lowest, about 3 to 5 times that of metallic copper, at the same thickness and heat transfer area; is a few tenths of a ceramic.

At the same time, according to a thermal time constant model: r×c=τ, it can be seen that since the thermal resistance R of diamond is small, the thermal time constant of diamond is smaller than that of metal, and thus the response to temperature change is faster.

Meanwhile, the size of the temperature measuring chip 100 can be smaller than 0.5mm multiplied by 0.5mm (the size of a conventional automobile IGBT chip is 10mm multiplied by 10 mm), the volume ratio is only 1/400 under the same thickness, and the heat capacity is very small. Therefore, the present temperature measurement chip 100 has very little heat dissipation effect (less than 0.25%) on the chip 200 under test.

The principle of the temperature measuring chip 100 is that the temperature measuring chip 100 can be welded or sintered on the chip 200 to be measured by utilizing the ultrahigh heat conduction capability of diamond and the good temperature-electrical property of the thermosensitive element 2, and the temperature measuring chip 100 is connected with an external circuit through a bonding wire 4 for data processing, so that the temperature information of the chip 200 to be measured can be accurately and timely represented.

Of course, in other embodiments, other materials of the heat transfer substrate 1 may be selected, such as aluminum nitride or other materials with good heat conduction effect.

Further, in some embodiments, the thermistor 2 may be a thermistor or a thermosensitive PN junction, and both the thermistor and the thermosensitive PN junction are capable of converting a temperature signal into an electrical signal.

In some alternative embodiments, the side of the thermal element 2 remote from the heat transfer substrate 1 is provided with a passivation layer 5 to seal the thermal element 2 between the passivation layer 5 and the heat transfer substrate 1; and the side of the metal electrode 3 far away from the thermosensitive element 2 is also provided with a passivation layer 5, in this embodiment, the internal structure of the temperature measuring chip 100 can be protected from external moisture, dust particles, and the like by providing the passivation layer 5.

Referring to fig. 18, an embodiment of the present invention further provides a chip structure, which may include: the chip 200 to be tested, one side of the chip 200 to be tested is attached with a temperature measuring chip 100, wherein the temperature measuring chip 100 includes: a heat transfer substrate 1, wherein a thermosensitive element 2 contacting with the heat transfer substrate 1 is arranged on one side of the heat transfer substrate 1, and the thermosensitive element 2 is used for converting a temperature signal into an electric signal; and a metal electrode 3, wherein the metal electrode 3 is fixedly arranged on the heat transfer substrate 1, and the metal electrode 3 is electrically connected with the thermosensitive element 2. The temperature measuring chip 100 in this embodiment may be the temperature measuring chip 100 in any of the above embodiments, and will not be described herein.

Further, in some embodiments, the heat transfer substrate 1 may be attached to the chip 200 to be measured by pressure welding or pressure sintering, the temperature measuring chip 100 is made into the same sheet structure, and the chip 200 to be measured and the temperature measuring chip 100 may be completely attached without leaving a gap by pressure welding or pressure sintering, so as to improve the temperature measuring accuracy.

The embodiment of the invention also provides a manufacturing method of the temperature measuring chip 100, which can comprise the following steps:

step 1: a thermal element 2 is fixedly arranged on one side of the heat transfer substrate 1, wherein the thermal element 2 is used for converting a temperature signal into an electric signal.

Step 2: a metal electrode 3 is fixed on the heat transfer substrate 1, so that the metal electrode 3 is electrically connected with the thermosensitive element 2. When the temperature measuring chip 100 is manufactured, one product can be manufactured at a time, or a plurality of products can be manufactured at a time, when the plurality of products are manufactured at a time, the heat transfer substrate 1 can be designed as a whole plate, a plurality of temperature measuring chips 100 are manufactured on the whole large heat transfer substrate 1, and finally, the plurality of independent products are cut. In this embodiment, the heat transfer substrate 1 may be designed in a disk shape, and a plurality of temperature measuring chips 100 may be manufactured on the entire large heat transfer substrate 1.

Wherein, before step 1, the method further comprises the step of generating the heat transfer substrate 1 by a method of Microwave Plasma Chemical Vapor Deposition (MPCVD) of raw materials, wherein when the heat transfer substrate 1 is diamond, the raw materials can comprise pure carbon, CH4 gas and H2 gas.

After the heat transfer substrate 1 is generated, the heat transfer substrate 1 can be ground and polished by using an ion mill and polishing equipment until the surface roughness Ra meets the requirement that Ra is less than or equal to 1nm, so that the heat transfer substrate 1 is easy to process and the heat dissipation degree is enhanced.

In some embodiments, referring to fig. 2 to 5, the fixing the heat-sensitive element 2 on one side of the heat transfer substrate 1 may include: an epitaxial layer 6 is manufactured on the heat transfer substrate 1, wherein a layer of epitaxial layer 6 can be manufactured on the heat transfer substrate 1 through a magnetron sputtering process, and the material of the epitaxial layer 6 can be aluminum nitride or silicon nitride; etching the epitaxial layer 6 to form a first cavity 91; the first cavity 91 is filled with a heat sensitive material to form the heat sensitive element 2.

As shown in fig. 3 to 4, the first cavity 91 is formed by etching the epitaxial layer 6, which may include the following steps: coating a layer of photoresist 7 on the epitaxial layer 6, manufacturing a photoetching plate according to the required pattern position, transferring the pattern on the photoetching plate onto the photoresist 7, corroding the photoresist 7 of the exposed part, and protecting other areas (the step is to carry out photoetching on the photoresist 7); the exposed areas are then etched with an etching solution to form the first cavities 91.

Further, after the first cavity 91 is formed, the photoresist 7 may be washed off, and the heat-sensitive paste may be filled into the first cavity 91 by a screen printing or deposition method.

On the basis of the above technical solution, as shown in fig. 6 to 8, the fixing a metal electrode 3 on the heat transfer substrate 1, so that the metal electrode 3 is electrically connected with the thermal element 2, may include the following steps: coating a photoresist 7 on the epitaxial layer 6, and carrying out photoetching (secondary photoetching) on the photoresist 7 to form an exposed area, wherein during photoetching, a photoetching plate is manufactured in advance according to a required pattern position, patterns on the photoetching plate are transferred onto the photoresist 7, the photoresist 7 of the exposed part is corroded, and other areas are protected; the exposed area is then etched (this is a second etch) to form a second cavity 92, and an etching solution may be used to etch the exposed area during etching; and filling a metal material into the second cavity 92 to form the metal electrode 3.

Wherein a metallic material, which may be metallic aluminum or titanium or nickel or silver, may be deposited in the second cavity 92 to form the metallic electrode 3, wherein the aluminum is the least costly.

In some alternative embodiments, referring to fig. 9 to 11, after the metal electrode 3 is formed, a third photolithography step may be performed, that is, a photolithography plate is made again according to the required pattern position, the photoresist 7 is subjected to photolithography, the pattern on the photolithography plate is transferred onto the photoresist 7, the photoresist 7 of the exposed portion is corroded, and other areas are protected; and then, etching the exposed area by using an etching solution for the third time to form a third cavity 93 (wherein the third cavity 93 is positioned between the metal electrodes 3 of the adjacent temperature measuring chips 100), filling materials into the third cavity 93 to form a passivation layer 5, and washing out the photoresist 7, wherein the material for forming the passivation layer 5 can be polyimide (PSPI) material or glass SiO2 and the like. The passivation layer 5 formed in the third cavity 93 in this embodiment may be protected outside the metal electrode 3 after the temperature measuring chip 100 is cut.

Further, as shown in fig. 12 to 15, after forming the passivation layer 5 in the third cavity 93, a layer of semiconductor film 8, preferably a silicon film 8, may be grown on the front surface of the wafer (where the devices formed before growing the semiconductor film 8 may be referred to as a wafer), and of course, other types of semiconductor materials may also be used, and then, performing a fourth photolithography on the semiconductor film 8, that is, manufacturing a photolithography plate according to the required pattern position again, performing photolithography on the photoresist 7, transferring the pattern on the photolithography plate onto the photoresist 7, and etching away the photoresist 7 in the exposed portion, so that other areas are protected; then etching the exposed area with etching solution to form a fourth cavity 94 (wherein the fourth cavity 94 is located at one side of the heat sensitive element 2 far away from the heat transfer substrate 1), filling material into the fourth cavity 94 to form a passivation layer 5, and washing out the photoresist 7, wherein the material forming the passivation layer 5 can be polyimide (PSPI) material or glass SiO 2; then, the semiconductor film 8 on the surface is washed off by acid washing, and finally the wafer is diced and cut into temperature measuring chips 100 (see fig. 16 to 17).

The embodiment of the invention also provides a manufacturing method of the chip structure, which can comprise the following steps: a thermal element 2 is fixedly arranged on one side of the heat transfer substrate 1, wherein the thermal element 2 is used for converting a temperature signal into an electric signal; a metal electrode 3 is fixedly arranged on the heat transfer substrate 1, so that the metal electrode 3 is electrically connected with the thermosensitive element 2 to form a temperature measuring chip 100; the temperature measuring chip 100 is attached to the heat concentration of the chip 200 to be measured, and the temperature measuring chip 100 is fixed to the chip 200 to be measured by means of pressure welding or pressure sintering.

The manufacturing method of the temperature measurement chip 100 may be any of the manufacturing methods provided in the embodiments, after the temperature measurement chip 100 is manufactured, the temperature measurement chip 100 may be subsequently packaged, that is, the temperature measurement chip 100 is removed, attached to a heating center of the measured chip 200, sintered or reflowed for curing, wire bonded on the temperature measurement chip 100, and connected to an external circuit to obtain a resistance-time curve, and the temperature-time curve is obtained through data operation.

In the description of the present invention, it should be noted that the azimuth or positional relationship indicated by the terms "upper", "lower", etc. are based on the azimuth or positional relationship shown in the drawings, and are merely for convenience of describing the present invention and simplifying the description, and are not indicative or implying that the apparatus or element in question must have a specific azimuth, be constructed and operated in a specific azimuth, and thus should not be construed as limiting the present invention. Unless specifically stated or limited otherwise, the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.

It should be noted that in the present invention, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.

The foregoing is only a specific embodiment of the invention to enable those skilled in the art to understand or practice the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A temperature measurement chip, characterized in that it comprises:

a heat transfer substrate (1), wherein one side of the heat transfer substrate (1) is provided with a thermosensitive element (2) contacted with the heat transfer substrate (1), and the thermosensitive element (2) is used for converting a temperature signal into an electric signal;

the metal electrode (3), the metal electrode (3) is fixed in the heat transfer base plate (1), and the metal electrode (3) with the thermal sensitive element (2) electric connection.

2. The thermometric chip of claim 1, wherein: the heat transfer substrate (1) is made of diamond.

3. The thermometric chip of claim 1, wherein: the thermosensitive element (2) is a thermistor or a thermosensitive PN junction.

4. The thermometric chip of claim 1, wherein: a passivation layer (5) is arranged on one side of the thermosensitive element (2) far away from the heat transfer substrate (1);

and a passivation layer (5) is arranged on one side of the metal electrode (3) far away from the thermosensitive element (2).

5. A chip structure, comprising:

the temperature measuring chip is attached to one side of the measured chip, and comprises:

a heat transfer substrate (1), wherein one side of the heat transfer substrate (1) is provided with a thermosensitive element (2) contacted with the heat transfer substrate (1), and the thermosensitive element (2) is used for converting a temperature signal into an electric signal;

the metal electrode (3), the metal electrode (3) is fixed in the heat transfer base plate (1), and the metal electrode (3) with the thermal sensitive element (2) electric connection.

6. The chip structure of claim 5, wherein:

the heat transfer substrate (1) is attached to the chip to be tested by means of pressure welding or pressure sintering.

7. The manufacturing method of the temperature measuring chip is characterized by comprising the following steps of:

a thermosensitive element (2) is fixedly arranged on one side of the heat transfer substrate (1), wherein the thermosensitive element (2) is used for converting a temperature signal into an electric signal;

and a metal electrode (3) is fixedly arranged on the heat transfer substrate (1), so that the metal electrode (3) is electrically connected with the thermosensitive element (2).

8. The method for manufacturing a temperature measurement chip according to claim 7, wherein the fixing of the thermosensitive element (2) on the side of the heat transfer substrate (1) includes:

manufacturing an epitaxial layer (6) on the heat transfer substrate (1);

-etching the epitaxial layer (6) to form a first cavity (91);

a thermosensitive material is filled in the first cavity (91) to form a thermosensitive element (2).

9. The method for manufacturing a temperature measurement chip according to claim 8, wherein the fixing of the metal electrode (3) on the heat transfer substrate (1) to electrically connect the metal electrode (3) to the heat sensitive element (2) includes:

coating a photoresist (7) on the epitaxial layer (6), and photoetching the photoresist (7) to form an exposed area;

etching the exposed region to form a second cavity (92);

and filling a metal material into the second cavity (92) to form a metal electrode (3).

10. A method of manufacturing a chip structure, comprising the steps of:

a thermosensitive element (2) is fixedly arranged on one side of the heat transfer substrate (1), wherein the thermosensitive element (2) is used for converting a temperature signal into an electric signal;

a metal electrode (3) is fixedly arranged on the heat transfer substrate (1), and the metal electrode (3) is electrically connected with the thermosensitive element (2) to form a temperature measuring chip;

and the temperature measuring chip is stuck to the heating concentration position of the chip to be measured, and is fixed to the chip to be measured in a pressure welding or pressure sintering mode.

Images