CN112345111B - High-power heat source chip and preparation method thereof - Google Patents

High-power heat source chip and preparation method thereof Download PDF

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Publication number
CN112345111B
CN112345111B CN202011039952.6A CN202011039952A CN112345111B CN 112345111 B CN112345111 B CN 112345111B CN 202011039952 A CN202011039952 A CN 202011039952A CN 112345111 B CN112345111 B CN 112345111B
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heat source
layer
temperature sensor
simulated
simulated heat
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CN112345111A (en
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张剑
卢茜
向伟玮
李阳阳
蒋苗苗
朱晨俊
王文博
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CETC 29 Research Institute
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
    • G01K1/143—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations for measuring surface temperatures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a high-power heat source chip, wherein the surface of the chip is provided with a film simulated heat source resistance and a film temperature sensor; the temperature sensor is coated in the simulated heat source resistor or integrated at the bottom of the simulated heat source resistor; the resistance value of the film temperature sensor is far larger than the resistance of the simulated heat source, and the distribution position of the film temperature sensor is determined according to the heat dissipation structure of the high-density integrated package. By wrapping the temperature sensor in the simulated heat source resistor or integrating the temperature sensor in the bottom of the simulated heat source resistor, the high-power heating is realized, and meanwhile, the temperature gradient of the whole chip is measured in real time, so that the heat dissipation capacity of the high-density integrated package is accurately analyzed.

Description

High-power heat source chip and preparation method thereof
Technical Field
The invention relates to the technical field of microelectronic heat dissipation, in particular to a high-power heat source chip and a preparation method thereof.
Background
With the development of third generation semiconductor technologies represented by GaN, siC, and the like and the further improvement of integration density of packaging systems, thermal management problems have gradually become a bottleneck in the development of electronic equipment. How to accurately analyze the heat dissipation capability of high density integrated packages is critical to the development of electronic systems. In general, the temperature of the chip surface during the operation of a real chip is analyzed by means of a thermocouple or an infrared thermal imaging method, so that the heat dissipation capacity of the packaging system is analyzed.
However, thermocouples generally measure temperature using a contact method, and it is difficult to accurately analyze temperature distribution of different areas of the chip surface; meanwhile, the response speed of the contact measurement is low, the temperature measurement value is strongly related to the contact pressure and the contact mode, the measurement value has certain difference, and the accuracy of the measurement result is low. The precise infrared test system has complex equipment and high price; the chip is required to be calibrated in heat emissivity before testing, and the operation is complex; for a metal film layer with high infrared reflectivity, infrared calibration is difficult, and temperature distribution is difficult to accurately analyze.
In order to accurately analyze the heat dissipation capability of the high-density integrated package, a high-power heat source chip may be employed. The core of the chip is a film resistor, which is generally prepared by adopting a film vapor deposition technology, and the resistor material is generally metal materials such as gold, platinum, copper, aluminum and the like. The chinese patent ZL201810972120.6 proposes a high-power simulated heat source chip integrating a simulated heat source resistance and a temperature sensor together: the temperature distribution of the whole chip is measured in real time while high-power heating is realized; by adjusting the position of the temperature sensor, in-situ measurement of heat dissipation characteristics of different areas can be realized. The measuring method has the advantages of simple structure, simple manufacturing process and convenient measuring process, and can well solve the technical problems of thermocouple contact measurement and infrared thermal imaging measurement.
However, in this patent, the analog heat source resistance and the temperature sensor are simply integrated together on the same chip surface; the sensor and the simulated heat source resistor are far apart, and the measured value of the temperature sensing area is slightly lower than the temperature of the heat source area. Therefore, the temperature measured value obtained by using the high-power simulation heat source chip test is not necessarily the highest value of the high-power chip temperature, and has certain measurement error.
Therefore, it is necessary to improve the accuracy of the temperature measurement of the high-power heat source chip.
Disclosure of Invention
Aiming at the problems in the prior art, the high-power heat source chip and the preparation method thereof are provided, and the high-power heat generation is realized and the temperature gradient of the whole chip is measured in real time by coating the temperature sensor in the simulated heat source resistor or integrating the temperature sensor in the bottom of the simulated heat source resistor, so that the heat dissipation capacity of the high-density integrated package is accurately analyzed.
The technical scheme adopted by the invention is as follows: the high-power heat source chip comprises a simulated heat source resistor and a plurality of temperature sensors, wherein the simulated heat source resistor and the temperature sensors are serpentine series thin film plane resistors; the simulated heat source resistors are uniformly distributed on the surface of the simulated heat source chip; the temperature sensors are respectively coated at different positions inside the simulated heat source resistor; the resistance value of the temperature sensor is far greater than the resistance of the simulated heat source.
Further, the simulated heat source chip comprises a substrate, a passivation layer, an adhesion layer and a metal film layer, wherein the passivation layer is arranged on the surface of the substrate, the adhesion layer is arranged on the surface of the passivation layer, the metal film layer is arranged on the surface of the adhesion layer, and the metal film layer forms a simulated heat source resistor and a temperature sensor, and a heat source bonding pad and a temperature sensor bonding pad which are respectively connected with the simulated heat source resistor and the temperature sensor through photoetching combined film etching technology; the back of the substrate is provided with a metal layer for welding.
Further, the number of heat source bonding pads in the simulated heat source chip is 2, and the number of temperature sensor bonding pads corresponding to each temperature sensor is 4.
Further, the number of the temperature sensors is 1-10.
The invention also provides a high-power heat source chip, which comprises a simulated heat source resistor and a plurality of temperature sensors, wherein the simulated heat source resistor and the temperature sensors are both serpentine series thin film plane resistors; the simulated heat source resistors are uniformly distributed on the surface of the simulated heat source chip; the temperature sensors are distributed at the bottom of the simulated heat source resistor, and an insulating layer is arranged between the temperature sensors and the simulated heat source resistor; the resistance value of the temperature sensor is far greater than the resistance of the simulated heat source.
Further, the simulated heat source chip comprises a substrate, a passivation layer, a first adhesion layer, a first metal film layer, an insulating layer, a second adhesion layer and a second metal film layer, wherein the passivation layer is arranged on the surface of the substrate, the first adhesion layer is arranged on the surface of the passivation layer, the first metal film layer is arranged on the surface of the first adhesion layer, and the first metal film layer forms a temperature sensor through photoetching and film etching technologies; the insulating layer covers the surface of the temperature sensor, the second adhesion layer is arranged on the surface of the passivation layer, the second metal film layer is arranged on the surface of the second adhesion layer, the second metal film layer forms a simulated heat source resistor and a heat source bonding pad which is interconnected with the simulated heat source resistor through photoetching combined with a film etching technology, and the insulating layer in the sensor interconnection area is removed to lead out the temperature sensor bonding pad which is interconnected with the sensor; the back of the substrate is provided with a metal layer for welding.
Further, the number of heat source bonding pads in the simulated heat source chip is 2, and the number of temperature sensor bonding pads corresponding to each temperature sensor is 4.
Further, the number of the temperature sensors is 1-10.
The invention also provides a preparation method of the high-power heat source chip, which comprises the following steps:
step 1, preparing a passivation layer on the surface of a substrate by adopting a plasma enhanced chemical vapor deposition technology;
step 2, preparing an adhesion layer on the surface of the passivation layer by adopting magnetron sputtering;
step 3, preparing a high-temperature-resistant metal film layer on the surface of the adhesion layer by adopting a film vapor deposition technology;
step 4, preparing a metal film layer into a serpentine-shaped simulated heat source resistor and a plurality of temperature sensors by adopting photoetching and film etching technologies; the resistance of the simulated heat source is uniformly distributed on the surface of the simulated heat source chip; the temperature sensors are respectively coated at different positions inside the simulated heat source resistor;
step 5, preparing a heat source bonding pad and a temperature sensor bonding pad which are respectively connected with the simulated heat source resistor and the temperature sensor by adopting photoetching and film etching technologies;
and 6, preparing a metal welding layer on the back surface of the substrate by adopting a thin film deposition technology.
The invention also provides a preparation method of the high-power heat source chip, which comprises the following steps:
step 1, preparing a passivation layer on the surface of a substrate by adopting a plasma enhanced chemical vapor deposition technology;
step 2, preparing a first adhesion layer on the surface of the passivation layer by adopting magnetron sputtering;
step 3, preparing a high-temperature-resistant first metal film layer on the surface of the first adhesion layer by adopting a film vapor deposition technology;
step 4, preparing a plurality of serpentine temperature sensors from the first metal film layer by adopting photoetching and film etching technologies; the temperature sensors are distributed on different positions of the surface of the first adhesive layer;
step 5, preparing an insulating layer on the surface of the temperature sensor by adopting a plasma enhanced chemical vapor deposition technology;
step 6, preparing a second adhesion layer on the surface of the insulating layer by adopting a magnetron sputtering method;
step 7, preparing a high-temperature-resistant second metal film layer on the surface of the second adhesion layer by adopting a film vapor deposition technology;
step 8, preparing a second metal film layer into a serpentine-shaped simulated heat source resistor by adopting photoetching and film etching technologies; the simulated heat source resistance is uniformly distributed on the surface of the second adhesion layer;
step 9, removing an insulating layer of a bonding pad interconnection area of the temperature sensor integrated at the bottom of the simulated heat source resistor by adopting photoetching and film etching technologies;
step 10, preparing a heat source bonding pad and a temperature sensor bonding pad which are respectively connected with the simulated heat source resistor and the temperature sensor by adopting photoetching and film deposition technology;
and 11, preparing a metal welding layer on the back surface of the substrate by adopting a thin film deposition technology.
Compared with the prior art, the beneficial effects of adopting the technical scheme are as follows:
(1) The simulated heat source and the temperature sensor are integrated together, so that the temperature gradient of the whole chip is measured while high-power heating is realized.
(2) And the in-situ measurement of the heat dissipation characteristics of different areas of the high-density integrated package is realized by adjusting the position of the temperature sensor.
(3) The temperature sensor is coated in the simulated heat source resistor or integrated at the bottom of the simulated heat source resistor, so that the temperature measurement area and the heat source heating area are as close as possible, the measurement error is reduced, and the measurement accuracy is improved.
Drawings
Fig. 1 is a schematic diagram of a high-power heat source chip structure provided by the invention.
Fig. 2 is a flowchart of the preparation of the high-power heat source chip provided by the invention.
Reference numerals: the heat source comprises a 1-high-power heat source chip, a 2-simulated heat source resistor, a 3-heat source bonding pad, a 4-temperature sensor, a 5-temperature sensor bonding pad, a 6-temperature sensor coated in the simulated heat source resistor and a 7-temperature sensor integrated at the bottom of the simulated heat source resistor.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1
As shown in fig. 1, a high-power heat source chip with a temperature sensor wrapped inside a simulated heat source resistor is provided, wherein the heat source chip comprises the simulated heat source resistor and a plurality of temperature sensors, and the simulated heat source resistor and the temperature sensors are both serpentine series thin film plane resistors; the simulated heat source resistors are uniformly distributed on the surface of the simulated heat source chip; the temperature sensors are respectively coated at different positions inside the simulated heat source resistor; the resistance value of the temperature sensor is far greater than the resistance of the simulated heat source, the resistance value of the simulated heat source resistance is 10-200 ohms, and the resistance value of the temperature sensor is 500-3000 ohms.
Specifically, the simulated heat source chip comprises a substrate, a passivation layer, an adhesion layer and a metal film layer, wherein the passivation layer is arranged on the surface of the substrate, the adhesion layer is arranged on the surface of the passivation layer, the metal film layer is arranged on the surface of the adhesion layer, and the metal film layer forms a simulated heat source resistor, a temperature sensor, a heat source bonding pad and a temperature sensor bonding pad which are respectively connected with the simulated heat source resistor and the temperature sensor through photoetching combined with a film etching technology; the back of the substrate is provided with a metal layer for welding. The number of heat source bonding pads in the simulated heat source chip is 2, and the number of temperature sensor bonding pads corresponding to each temperature sensor is 4.
In a preferred embodiment, the substrate material is silicon, a passivation layerIs SiN x The adhesion layer is made of Ti/TiN x The metal film layer material is one of Au, pt and W, the heat source bonding pad and the temperature sensor bonding pad material are one of Au, al and other materials, and the metal layer material on the back of the substrate is one of Au, ag and Cu.
In a preferred embodiment, the metal film layer material is W.
In a preferred embodiment, the number of temperature sensors is 1-10.
In a preferred embodiment, the resistance of the simulated heat source resistor is 50 ohms and the resistance of the temperature sensor is 2000 ohms.
In a preferred embodiment, the thickness of the chip substrate is 50-500 microns. Preferably, the thickness of the chip substrate is 100 microns.
As shown in fig. 2, the invention also provides a preparation method of the high-power heat source chip, which comprises the following steps:
step 1, preparing a passivation layer on the surface of a substrate by adopting a plasma enhanced chemical vapor deposition technology;
step 2, preparing an adhesion layer on the surface of the passivation layer by adopting magnetron sputtering;
step 3, preparing a high-temperature-resistant metal film layer on the surface of the adhesion layer by adopting a film vapor deposition technology;
step 4, preparing a metal film layer into a serpentine-shaped simulated heat source resistor and a plurality of temperature sensors by adopting photoetching and film etching technologies; the resistance of the simulated heat source is uniformly distributed on the surface of the simulated heat source chip; the temperature sensors are respectively coated at different positions inside the simulated heat source resistor;
step 5, preparing a heat source bonding pad and a temperature sensor bonding pad which are respectively connected with the simulated heat source resistor and the temperature sensor by adopting photoetching and film etching technologies;
and 6, preparing a metal welding layer on the back surface of the substrate by adopting a thin film deposition technology.
In a preferred embodiment, the substrate of the high power heat source chip is thinned to 50-500 microns before step 6 is performed.
Example 2
As shown in fig. 1, a high-power heat source chip with a temperature sensor integrated at the bottom of a simulated heat source resistor is provided, wherein the heat source chip comprises the simulated heat source resistor and a plurality of temperature sensors, and the simulated heat source resistor and the temperature sensors are both serpentine series thin film plane resistors; the simulated heat source resistors are uniformly distributed on the surface of the simulated heat source chip; the temperature sensors are distributed at the bottom of the simulated heat source resistor, and an insulating layer is arranged between the temperature sensors and the simulated heat source resistor; the resistance value of the temperature sensor is far greater than the resistance of the simulated heat source, the resistance value of the simulated heat source resistance is 10-200 ohms, and the resistance value of the temperature sensor is 500-3000 ohms.
Specifically, the simulated heat source chip comprises a substrate, a passivation layer, a first adhesion layer, a first metal film layer, an insulating layer, a second adhesion layer and a second metal film layer, wherein the passivation layer is arranged on the surface of the substrate, the first adhesion layer is arranged on the surface of the passivation layer, the first metal film layer is arranged on the surface of the first adhesion layer, and the first metal film layer forms a temperature sensor through photoetching and film etching technologies; the insulation layer covers the surface of the temperature sensor, the second adhesion layer is arranged on the surface of the insulation layer, the second metal film layer is arranged on the surface of the second adhesion layer, the second metal film layer forms a simulated heat source resistor and a heat source bonding pad which is interconnected with the simulated heat source resistor through photoetching combined with a film etching technology, and the insulation layer in the sensor interconnection area is removed to lead out the temperature sensor bonding pad which is interconnected with the sensor; the back of the substrate is provided with a metal layer for welding. The number of heat source bonding pads in the simulated heat source chip is 2, and the number of temperature sensor bonding pads corresponding to each temperature sensor is 4.
In a preferred embodiment, the substrate material is silicon and the passivation layer material is SiN x The first and second adhesion layers are made of Ti/TiN x The material of the selected insulating layer is SiOx, the material of the first metal film layer and the material of the second metal film layer are one of Au, pt and W, the material of the heat source bonding pad and the material of the temperature sensor bonding pad are one of Au, al and other materials, and the material of the metal layer on the back of the substrate is one of Au, ag and Cu.
In a preferred embodiment, the first and second metal film layers are both W.
In a preferred embodiment, the number of temperature sensors is 1-10.
In a preferred embodiment, the resistance of the simulated heat source resistor is 50 ohms and the resistance of the temperature sensor is 2000 ohms.
In a preferred embodiment, the thickness of the chip substrate is 50-500 microns. Preferably, the thickness of the chip substrate is 100 microns.
As shown in fig. 2, the invention also provides a preparation method of the high-power heat source chip, which comprises the following steps:
step 1, preparing a passivation layer on the surface of a substrate by adopting a plasma enhanced chemical vapor deposition technology;
step 2, preparing a first adhesion layer on the surface of the passivation layer by adopting magnetron sputtering;
step 3, preparing a high-temperature-resistant first metal film layer on the surface of the first adhesion layer by adopting a film vapor deposition technology;
step 4, preparing a first metal film layer into a plurality of serpentine temperature sensors by adopting photoetching and film etching technologies; the temperature sensors are distributed on different positions of the surface of the first adhesive layer;
step 5, preparing an insulating layer on the surface of the temperature sensor by adopting a plasma enhanced chemical vapor deposition technology;
step 6, preparing a second adhesion layer on the surface of the insulating layer by adopting a magnetron sputtering method;
step 7, preparing a high-temperature-resistant second metal film layer on the surface of the second adhesion layer by adopting a film vapor deposition technology;
step 8, preparing a second metal film layer into a serpentine-shaped simulated heat source resistor by adopting photoetching and film etching technologies; the simulated heat source resistance is uniformly distributed on the surface of the second adhesion layer;
step 9, removing an insulating layer of a bonding pad interconnection area of the temperature sensor integrated at the bottom of the simulated heat source resistor by adopting photoetching and film etching technologies;
step 10, preparing a heat source bonding pad and a temperature sensor bonding pad which are respectively connected with the simulated heat source resistor and the temperature sensor by adopting photoetching and film deposition technology;
and 11, preparing a metal welding layer on the back surface of the substrate by adopting a thin film deposition technology.
In a preferred embodiment, the substrate of the high power heat source chip is thinned to 50-500 microns before step 11 is performed.
The invention is not limited to the specific embodiments described above. The invention extends to any novel one, or any novel combination, of the features disclosed in this specification, as well as to any novel one, or any novel combination, of the steps of the method or process disclosed. It is intended that insubstantial changes or modifications from the invention as described herein be covered by the claims below, as viewed by a person skilled in the art, without departing from the true spirit of the invention.
All of the features disclosed in this specification, or all of the steps in a method or process disclosed, may be combined in any combination, except for mutually exclusive features and/or steps.
Any feature disclosed in this specification may be replaced by alternative features serving the same or equivalent purpose, unless expressly stated otherwise. That is, each feature is one example only of a generic series of equivalent or similar features, unless expressly stated otherwise.

Claims (5)

1. The preparation method of the high-power heat source chip is characterized by comprising the following steps of:
step 1, preparing a passivation layer on the surface of a substrate by adopting a plasma enhanced chemical vapor deposition technology;
step 2, preparing a first adhesion layer on the surface of the passivation layer by adopting magnetron sputtering;
step 3, preparing a high-temperature-resistant first metal film layer on the surface of the first adhesion layer by adopting a film vapor deposition technology;
step 4, preparing a first metal film layer into a plurality of serpentine temperature sensors by adopting photoetching and film etching technologies; the temperature sensors are distributed on different positions of the surface of the first adhesive layer;
step 5, preparing an insulating layer on the surface of the temperature sensor by adopting a plasma enhanced chemical vapor deposition technology;
step 6, preparing a second adhesion layer on the surface of the insulating layer by adopting a magnetron sputtering method;
step 7, preparing a high-temperature-resistant second metal film layer on the surface of the second adhesion layer by adopting a film vapor deposition technology;
step 8, preparing a second metal film layer into a serpentine-shaped simulated heat source resistor by adopting photoetching and film etching technologies; the simulated heat source resistance is uniformly distributed on the surface of the second adhesion layer;
step 9, removing an insulating layer of a temperature sensor bonding pad interconnection area integrated at the bottom of the simulated heat source resistor by adopting photoetching and film etching technologies;
step 10, preparing a heat source bonding pad and a temperature sensor bonding pad which are respectively connected with the simulated heat source resistor and the temperature sensor by adopting photoetching and film deposition technology;
and 11, preparing a metal welding layer on the back surface of the substrate by adopting a thin film deposition technology.
2. A high-power heat source chip prepared based on the preparation method of the high-power heat source chip as claimed in claim 1, wherein the heat source chip comprises a simulated heat source resistor and a plurality of temperature sensors, and the simulated heat source resistor and the temperature sensors are all serpentine series thin film plane resistors; the simulated heat source resistors are uniformly distributed on the surface of the simulated heat source chip; the temperature sensors are distributed at the bottom of the simulated heat source resistor, and an insulating layer is arranged between the temperature sensors and the simulated heat source resistor; the resistance value of the temperature sensor is far greater than the resistance of the simulated heat source.
3. The high-power heat source chip of claim 2, wherein the simulated heat source chip comprises a substrate, a passivation layer, a first adhesion layer, a first metal film layer, an insulating layer, a second adhesion layer and a second metal film layer, wherein the passivation layer is arranged on the surface of the substrate, the first adhesion layer is arranged on the surface of the passivation layer, the first metal film layer is arranged on the surface of the first adhesion layer, and the first metal film layer forms the temperature sensor through photoetching combined with a film etching technology; the insulating layer covers the surface of the temperature sensor, the second adhesion layer is arranged on the surface of the passivation layer, the second metal film layer is arranged on the surface of the second adhesion layer, the second metal film layer forms a simulated heat source resistor and a heat source bonding pad which is interconnected with the simulated heat source resistor through photoetching combined with a film etching technology, and the insulating layer in the sensor interconnection area is removed to lead out the temperature sensor bonding pad which is interconnected with the sensor; the back of the substrate is provided with a metal layer for welding.
4. A high power heat source chip according to claim 2 or 3, wherein the number of heat source pads in the simulated heat source chip is 2, and the number of temperature sensor pads corresponding to each temperature sensor is 4.
5. The high power heat source chip of claim 4, wherein the number of temperature sensors is 1-10.
CN202011039952.6A 2020-09-28 2020-09-28 High-power heat source chip and preparation method thereof Active CN112345111B (en)

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