CN116072518A - Protective film of ultrathin lithium tantalate wafer and stripping method - Google Patents
Protective film of ultrathin lithium tantalate wafer and stripping method Download PDFInfo
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- CN116072518A CN116072518A CN202211718730.6A CN202211718730A CN116072518A CN 116072518 A CN116072518 A CN 116072518A CN 202211718730 A CN202211718730 A CN 202211718730A CN 116072518 A CN116072518 A CN 116072518A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
A protection film and stripping method of ultrathin lithium tantalate wafer comprises the following steps: performing ultrasonic cleaning on the lithium tantalate wafer by using an alkaline cleaning solution; drying the lithium tantalate wafer by using a dryer; uniformly coating a protective film on the front surface of a lithium tantalate wafer and curing; carrying out sand blasting treatment on the lithium tantalate wafer; and (3) putting the lithium tantalate wafer into a mold release agent solution, heating, ultrasonically cleaning and performing film release to finally obtain the lithium tantalate wafer with no residual glue on the surface. The invention effectively solves the problem that residual glue is left on the surface of the wafer after the film is torn by the traditional process through the process improvement, improves the production efficiency, reduces the production cost and ensures the production yield.
Description
Technical Field
The invention relates to the field of semiconductor materials, in particular to a protective film of an ultrathin lithium tantalate wafer and a stripping method.
Background
Lithium tantalate (LiTaO) 3 LT for short) has excellent piezoelectric, acousto-optic, ferroelectric and pyroelectric effects, and becomes a basic functional material in the fields of surface acoustic wave devices, optical communication, laser and photoelectrons. The polished LT wafer is widely used for manufacturing electronic communication devices such as resonators, filters, transducers and the like, particularly for manufacturing high-frequency surface acoustic wave devices by good electromechanical coupling, temperature coefficient and other comprehensive performances, and is applied to a plurality of high-end communication fields such as mobile phones, interphones, satellite communication, aerospace and the like.
The film pasting and the sand blasting are common procedures in the production of lithium tantalate, and the sand blasting is generally to enable mortar dust to form dust fluid by high-pressure air, and the dust fluid is sprayed out through a special pipeline and a pipe orifice to act on the surface of a wafer. In the production of lithium tantalate wafers, sand blasting is required to be carried out on the back of the wafer, at the moment, protection measures are required to be carried out on the front of the wafer, mortar is prevented from being sprayed to the front of the wafer by mistake, sand blasting yield is affected, and a film pasting process is generally assisted in production. The wafer protective film used in the prior art is generally made of PVC material, the wafer protective film is pasted on the front surface of the wafer through a film pasting machine, and the wafer surface protective film is manually torn off after the sand blasting is completed. However, under the process flow, the film is easy to be cured incompletely due to the adhesive tape, the cohesive force of the colloid is not strong, the residual colloid is remained on the surface of the wafer, reworking and cleaning are needed, and the difficulty of the cleaning process is increased. The traditional PVC material needs to be externally applied with a certain pressure when being used for film pasting, and meanwhile, redundant protective films at the edge of the wafer are scratched by matching with a blade, so that the ultrathin lithium tantalate wafer is easy to scratch, break and crack in the processing process. The existing wafer protective film and demolding process has high processing cost, complex process and difficult guarantee of wafer yield, and the protective film and demolding method for the ultrathin lithium tantalate wafer are needed at present, so that the processing cost is reduced, the processing process is optimized, and the processing yield is improved.
The invention patent with publication number of CN113023021A discloses a film tearing equipment and a film tearing control method, wherein the equipment is provided with a pressure sensing unit and a control unit, and the pressure sensing unit detects the pressure of a film tearing roller acting on a film screen body to be torn in real time in the film tearing process so as to facilitate the intervention of the film tearing process (such as stopping the operation of the film tearing roller, giving an alarm and the like) at any time, avoid the occurrence of bad broken pieces and further improve the product yield in the film tearing process. Although the method ensures the yield of products, the problem that residual glue remains after the film is torn off from the surface of the chip cannot be avoided, and the wafer with the residual glue on the surface still needs to be reworked and cleaned.
Therefore, the prior art lacks a lithium tantalate wafer protective film and a stripping technology which can obtain the stripping adhesive without residual adhesive, and has high product yield and low processing cost.
Disclosure of Invention
The invention provides a protective film and a film removing method of an ultrathin lithium tantalate wafer, which are used for solving the defects of the prior art.
The invention adopts the technical scheme that: a protection film and a stripping method of an ultrathin lithium tantalate wafer are provided, wherein the wafer protection film and the stripping method comprise the following steps:
a) Putting the lithium tantalate wafer into an alkaline cleaning solution with the temperature of 45-55 ℃ for ultrasonic cleaning for 10-25 min, cleaning particle contamination and organic contamination on the surface of the wafer, and then putting the wafer into a pure water tank for washing to remove the residues of cleaning liquid on the surface of the wafer;
b) Putting the lithium tantalate wafer treated in the step a) into a spin dryer for spin-drying, wherein the spin-drying rotating speed of the wafer is 300-1000 rpm, and the spin-drying time is 3-8 min, so that a wafer with a dry surface and no water mark is obtained;
c) Placing the lithium tantalate wafer treated in the step b) on a screen printing table, uniformly coating a wafer protective film on the front surface of the lithium tantalate wafer to be treated by a screen printing method, and then placing the lithium tantalate wafer coated with the protective film under an ultraviolet lamp for irradiation for 1-5 min to wait for the curing of the wafer protective film;
d) Adsorbing the front surface of the lithium tantalate wafer treated in the step c) on a vacuum platform of a sand blasting machine for sand blasting treatment;
e) And d), placing the lithium tantalate wafer treated in the step d) into a release agent cleaning solution with the temperature of 70-85 ℃ for ultrasonic soaking for 10-30 min to perform release treatment, then placing the wafer into a pure water tank to wash and remove the release agent residue on the surface of the wafer, and finally spin-drying the wafer to obtain the lithium tantalate wafer with no residual glue on the surface.
In the step a), the method of heating ultrasonic cleaning by an alkaline cleaning solution is adopted to remove particle contamination, organic contamination and the like on the surface of the wafer, so that poor adhesion of a protective film caused by contamination of particles, grease and the like on the surface of the wafer is avoided, the ultrasonic cleaning frequency is 40kHz, and the alkaline cleaning solution is formed by mixing an alkaline cleaning agent and pure water according to a certain proportion.
Wherein, the alkaline cleaning solution in the step a) is prepared from pure water and alkaline cleaning agent according to the volume ratio of 3-10: 1, the alkaline cleaning agent is prepared by mixing 50-60% of pure water, 5-20% of inorganic alkali, 10-20% of chelating agent, 5-15% of inorganic auxiliary agent and 5-10% of organic alkali.
In the step b), the wafer is spin-dried by a spin dryer, so that the influence of residual water stains on the surface of the wafer on the adsorption effect of the protective film is avoided.
In the step c), the protective film is uniformly coated on the front surface of the wafer by using a screen printing method, the screen printing screen is set to be 100-200 meshes, the wafer protective film is a thick liquid mixture formed by mixing polyester, acrylic acid, a monomer mixture and an auxiliary agent, a lithium tantalate wafer coated with the protective film is placed under an ultraviolet lamp to irradiate and accelerate the curing of the wafer protective film, and the liquid protective film is subjected to film pasting in a screen printing mode, so that the wafer damage caused in the film pasting process is avoided.
Wherein the mass ratio of the components of the protective film in the step c) is 35-50% of polyester, 10-20% of monomer mixture, 15-25% of acrylic acid and 15-25% of diluent, and the illuminance of the ultraviolet lamp is 600-2000 mw/cm 2 。
In the step d), the mortar is sprayed onto the surface of the wafer by utilizing high-pressure air through a pipeline and a spray nozzle, the wafer is fixed by adopting vacuum adsorption, so that the wafer is effectively prevented from falling off, the adsorption of mortar particles onto the front surface of the wafer is reduced as much as possible, the pressure of the spray nozzle is 0.20-0.30 MPa, the reciprocation time of the spray nozzle is 4-6 times, and the sand blasting temperature is 70-80 ℃.
In the step e), the lithium tantalate wafer is put into a stripping agent cleaning solution for cleaning, alkaline substances and auxiliary agents in the stripping agent react with polyester and acrylic acid in the protective film at a certain temperature, and meanwhile, the stripping of the protective film can be accelerated by matching with ultrasound.
In the step e), the used release agent is formed by mixing pure water, inorganic alkali, a surfactant, a cosolvent and a stripping aid.
Wherein, the stripping agent cleaning solution in the step e) is prepared from pure water and a stripping agent according to the volume ratio of 3-9: 1, wherein the component mass ratio of the components forming the parting agent is 40-65% of pure water, 5-15% of sodium hydroxide, 10-25% of surfactant, 5-15% of cosolvent and 3-10% of stripping aid.
Compared with the prior art, the invention has the following beneficial technical effects:
in the first aspect, the wafer protective film adopted by the invention is a mixture of polyester, olefine acid and the like, reacts with alkaline cleaning liquid after heating, is convenient to take off the film by matching with ultrasound, and solves the problem that residual glue is left on the surface of the wafer when the film is torn off in the traditional film sticking mode;
in the second aspect, the ultrathin lithium tantalate wafer protective film is a thick liquid mixture, film pasting is completed through screen printing and ultraviolet light, external pressure and blade cutting of the protective film are not needed, the phenomena of broken pieces and edge breakage caused in the film pasting process of a traditional film pasting machine are avoided, and the processing yield is high;
in the third aspect, the chemical stripping method adopted by the invention reduces the manual stripping process, avoids the wafer damage phenomenon caused by improper stripping, and improves the processing yield;
in the fourth aspect, the film pasting and tearing technology adopted by the invention reduces the production cost, reduces the manpower investment and the labor loss and improves the working efficiency.
Drawings
FIG. 1 is a schematic diagram of the process flow of the present invention.
FIG. 2 is a graph showing the relationship between the stripping cleaning temperature and the stripping effect in examples 1, 2 and 3 of the present invention.
FIG. 3 is a graph showing the relationship between sodium hydroxide content and stripping effect in the stripping agents of examples 2, 4 and 5 according to the present invention.
FIG. 4 is a graph showing the comparative stripping effect of the process of the present invention and the conventional process according to examples 4, 5 and 6 of the present invention.
Detailed Description
The invention is further illustrated by the following examples, which should not be taken to limit the scope of the invention.
Example 1:
a) The alkaline cleaning agent is prepared from the following components in percentage by mass: 1, mixing the alkaline cleaning solution in a volume ratio, and putting the lithium tantalate wafer into the alkaline cleaning solution at 50 ℃ for ultrasonic cleaning at 40kHz for 20min;
b) Putting the washed lithium tantalate wafer into a spin dryer for spin-drying, wherein the spin-drying rotating speed of the wafer is 500rpm, and the spin-drying time is 5min;
c) Placing a lithium tantalate wafer on a screen printing table, uniformly coating a liquid protective film on the front surface of the lithium tantalate wafer to be treated by a screen printing method, and then placing the lithium tantalate wafer coated with the protective film under a UVLED for 3min;
d) Adsorbing the front surface of a lithium tantalate wafer on a vacuum platform of a sand blasting machine for sand blasting, wherein the sand blasting temperature is 72 ℃, the pressure of a spray head is 0.26MPa, and the spray head is used for performing sand blasting for 6 times in a reciprocating manner;
e) The stripping agent is prepared according to the mass fractions of 45% of pure water, 5% of sodium hydroxide, 25% of surfactant, 15% of cosolvent and 10% of stripping aid, and according to the pure water and the stripping agent 7:1 into a mold release solution, putting a lithium tantalate wafer into the mold release solution at 60 ℃ for ultrasonic soaking for 15min, putting 422 pieces, 14 pieces of surface residual glue, scratching 3 pieces, 0 piece of broken edge, 3.32% of surface residual glue rate, 0.71% of scratching rate, 0.00% of broken edge rate and 95.97% of yield.
Example 2:
a) As in example 1;
b) As in example 1;
c) As in example 1;
d) As in example 1;
e) The stripping agent is prepared according to the mass fractions of 45% of pure water, 5% of sodium hydroxide, 25% of surfactant, 15% of cosolvent and 10% of stripping aid, and according to the pure water and the stripping agent 7:1 into a mold release solution, putting a lithium tantalate wafer into the mold release solution with the temperature of 70 ℃ for ultrasonic soaking for 15min, putting 453 pieces, 8 pieces of surface residual glue, 2 pieces of scratch, 0 piece of edge breakage, 1.77 percent of surface residual glue, 0.44 percent of scratch, 0 percent of edge breakage and 97.79 percent of yield.
Example 3:
a) As in example 1;
b) As in example 1;
c) As in example 1;
d) As in example 1;
e) The stripping agent is prepared according to the mass fractions of 45% of pure water, 5% of sodium hydroxide, 25% of surfactant, 15% of cosolvent and 10% of stripping aid, and according to the pure water and the stripping agent 7:1 into a mold release solution, putting a lithium tantalate wafer into the mold release solution at 80 ℃ for ultrasonic soaking for 15min, putting 401 pieces of surface residual glue 7 pieces, scratching 2 pieces, chipping 0 pieces, the surface residual glue rate being 1.75%, the scratching rate being 0.50%, the chipping rate being 0.00% and the yield being 97.76%.
Comparative examples 1, 2 and 3, as shown in Table 1, show that the stripping cleaning effect is affected by the cleaning temperature, and that the stripping effect is poor when the temperature is too low, while the cleaning temperature cannot be too high due to the pyroelectric property of the lithium tantalate wafer itself.
TABLE 1 wafer cleaning residual glue and scratch Rate of examples 1, 2, 3
| Detecting items | Example 1 | Example 2 | Example 3 |
| Residual glue rate | 3.32% | 1.77% | 1.75% |
| Scratch ratio | 0.71% | 0.44% | 0.50% |
Example 4:
a) As in example 1;
b) As in example 1;
c) As in example 1;
d) As in example 1;
e) The stripping agent is prepared according to the mass fractions of 57% of pure water, 8% of sodium hydroxide, 20% of surfactant, 10% of cosolvent and 5% of stripping aid, and according to the pure water and the stripping agent 7:1 into a mold release solution, putting a lithium tantalate wafer into the mold release solution with the temperature of 70 ℃ for ultrasonic soaking for 15min, putting 460 pieces, 1 piece of surface residual glue, 0 piece of scratch, 0 piece of edge breakage, 0.22 percent of surface residual glue, 0.00 percent of scratch, 0.00 percent of edge breakage and 99.78 percent of yield.
Example 5:
a) As in example 1;
b) As in example 1;
c) As in example 1;
d) As in example 1;
e) The stripping agent is prepared according to the following components by mass percent, namely 50% of pure water, 15% of sodium hydroxide, 20% of surfactant, 10% of cosolvent and 5% of stripping aid, and according to the pure water and the stripping agent 7:1 into a mold release solution, putting a lithium tantalate wafer into the mold release solution with the temperature of 70 ℃ for ultrasonic soaking for 15min, putting 445 pieces of the mold release solution, carrying out surface residual glue 1 piece, scratching 0 piece, edge breakage 0 piece, surface residual glue rate of 0.22%, scratch rate of 0.00%, edge breakage rate of 0.00% and yield of 99.78%.
Comparative examples 2, 4 and 5 show that the stripping cleaning effect is affected by the concentration of sodium hydroxide in the stripping agent, and the stripping effect is poor when the concentration is low, and the stripping cleaning effect is good when the concentration is 8%, and the effect on the stripping effect is not greatly affected by continuously increasing the concentration of sodium hydroxide.
TABLE 2 wafer cleaning residual glue and scratch rates for examples 2, 4, 5
| Detecting items | Example 2 | Example 4 | Example 5 |
| Residual glue rate | 1.77% | 0.22% | 0.22% |
| Scratch ratio | 0.44% | 0.00% | 0.00% |
Example 6:
a) As in example 1;
b) As in example 1;
c) Attaching a traditional PVC protective film to a lithium tantalate wafer by using a film attaching machine, controlling the tension of the film to be 0.18Mpa during film attaching, and obtaining the lithium tantalate wafer with a front surface film attaching by controlling the cutting temperature of a blade to be 70 ℃ and the cutting speed to be 2000 pps;
d) Adsorbing the front surface of a lithium tantalate wafer on a vacuum platform of a sand blasting machine for sand blasting, wherein the sand blasting temperature is 72 ℃, the pressure of a spray head is 0.26MPa, and the spray head is used for performing sand blasting for 6 times in a reciprocating manner;
e) And (3) putting the lithium tantalate wafer after sand blasting into pure water at 40 ℃ for ultrasonic soaking for 30min, then manually tearing off a protective film on the surface of the wafer along the edge, putting 396 pieces, namely 21 pieces of surface residual glue, scratching 6 pieces, 1 piece of edge breakage, 5.30% of surface residual glue rate, 1.52% of scratch rate, 0.25% of edge breakage rate and 92.93% of yield.
Comparative examples 4, 5 and 6, as shown in Table 3, show that the adhesive residue and scratch rate of the protective film sticking and peeling methods used in the present invention are significantly lower than those of the conventional protective film sticking and peeling methods.
TABLE 3 wafer cleaning residual glue and scratch rates of examples 4, 5, 6
| Detecting items | Example 4 | Example 5 | Example 6 |
| Residual glue rate | 0.22% | 0.22% | 5.30% |
| Scratch ratio | 0.00% | 0.00% | 1.52% |
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. The protective film of the ultrathin lithium tantalate wafer and the stripping method are characterized by comprising the following specific steps:
putting the lithium tantalate wafer into an alkaline cleaning solution with the temperature of 45-55 ℃ for ultrasonic cleaning for 10-25 min, cleaning particle contamination and organic contamination on the surface of the wafer, and then putting the wafer into a pure water tank for washing to remove the residues of cleaning liquid on the surface of the wafer;
putting the lithium tantalate wafer treated in the step a) into a spin dryer for spin-drying, wherein the spin-drying rotating speed of the wafer is 300-1000 rpm, and the spin-drying time is 3-8 min, so that a wafer with a dry surface and no water mark is obtained;
placing the lithium tantalate wafer treated in the step b) on a screen printing table, uniformly coating a wafer protective film on the front surface of the lithium tantalate wafer to be treated by a screen printing method, and then placing the lithium tantalate wafer coated with the protective film under an ultraviolet lamp for irradiation for 1-5 min to wait for the solidification of the wafer protective film on the surface of the wafer;
adsorbing the front surface of the lithium tantalate wafer treated in the step c) on a vacuum platform of a sand blasting machine for sand blasting treatment;
and d), placing the lithium tantalate wafer treated in the step d) into a release agent cleaning solution with the temperature of 70-85 ℃ for ultrasonic soaking for 10-30 min to perform release treatment, then placing the wafer into a pure water tank to wash and remove the release agent residue on the surface of the wafer, and finally spin-drying the wafer to obtain the lithium tantalate wafer with no residual glue on the surface.
2. The protective film and the stripping method for ultra-thin lithium tantalate wafers of claim 1 wherein in step a), the alkaline cleaning solution is prepared from pure water and alkaline cleaning agent in a volume ratio of 3-10: 1, the alkaline cleaning agent is prepared by mixing 50-60% of pure water, 5-20% of inorganic alkali, 10-20% of chelating agent, 5-15% of inorganic auxiliary agent and 5-10% of organic alkali.
3. The method for protecting and removing a film from an ultra-thin lithium tantalate wafer as defined in claim 1, wherein in said step c), a protective film is uniformly coated on the front surface of the wafer by screen printing, said screen printing screen is set to 100-200 meshes, said protective film is a thick liquid mixture formed by mixing polyester, acrylic acid, monomer mixture and auxiliary agent, the mass ratio of each component of said protective film is 35-50% of polyester, 10-20% of monomer mixture, 15-25% of acrylic acid, 15-25% of diluent, and the illuminance of said ultraviolet lamp is 600-2000 mw/cm 2 。
4. The method for protecting and removing a film from an ultra-thin lithium tantalate wafer of claim 1, characterized in that in said step d), high-pressure air is used to spray mortar pipes and spray nozzles onto the surface of the wafer, the pressure of said spray nozzles is 0.20-0.30 MPa, the number of reciprocations of said spray nozzles is 4-6, and the blasting temperature is 70-80 ℃.
5. The method for protecting and removing a film from an ultra-thin lithium tantalate wafer according to claim 1, wherein in the step e), the lithium tantalate wafer is put into a remover cleaning solution for cleaning, the remover is formed by mixing pure water, inorganic alkali, a surfactant, a cosolvent and a stripping aid, and the remover cleaning solution is formed by mixing pure water and a remover according to a volume ratio of 3-9: 1, wherein the component mass ratio of the components forming the parting agent is 40-65% of pure water, 5-15% of sodium hydroxide, 10-25% of surfactant, 5-15% of cosolvent and 3-10% of stripping aid.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117096065A (en) * | 2023-10-17 | 2023-11-21 | 天通控股股份有限公司 | Bonding method of large-size ultrathin lithium tantalate wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117096065A (en) * | 2023-10-17 | 2023-11-21 | 天通控股股份有限公司 | Bonding method of large-size ultrathin lithium tantalate wafer |
| CN117096065B (en) * | 2023-10-17 | 2024-01-30 | 天通控股股份有限公司 | Bonding method of large-size ultrathin lithium tantalate wafer |
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