CN115967014A - Spectrum beam combining device of linear array semiconductor laser - Google Patents
Spectrum beam combining device of linear array semiconductor laser Download PDFInfo
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- CN115967014A CN115967014A CN202211678018.8A CN202211678018A CN115967014A CN 115967014 A CN115967014 A CN 115967014A CN 202211678018 A CN202211678018 A CN 202211678018A CN 115967014 A CN115967014 A CN 115967014A
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Abstract
The invention discloses a spectrum beam combining device of a linear array semiconductor laser, which comprises: a fast axis collimating lens, a slow axis collimating lens, a first cylindrical transmission lens and a diffraction grating are sequentially arranged along an optical axis of the linear array semiconductor laser; a second cylindrical transmission lens and a first concave reflector group are sequentially arranged in the 0-order diffraction beam direction of the diffraction grating, a second concave reflector group is arranged in the 1-order diffraction beam direction, and-1-order diffraction light of the diffraction grating is used as output light; the first concave reflector group and the second concave reflector group respectively adjust the angle according to the smile effect of the linear array semiconductor laser, so that feedback light returns to the light-emitting unit corresponding to the linear array semiconductor laser to form effective feedback; meanwhile, the curved surface of the first concave reflector group converges the divergent light beam in the fast axis direction along the fast axis direction of the linear array semiconductor laser, so that the light beam is fed back to the original light-emitting unit, the feedback efficiency is improved, and the light-emitting unit achieves stable wavelength locking.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a spectrum beam combining device of a linear array semiconductor laser.
Background
The semiconductor laser has the advantages of high efficiency, small size, long service life, rich wavelength, direct electric drive and the like, but is limited by the quality of a light beam and the output power of a single light-emitting unit, so that the semiconductor laser can only be used for the pumping sources of other lasers and application fields with low requirements on the quality of the light beam.
Beam combining techniques are common methods for obtaining high power semiconductor lasers and are generally classified into coherent beam combining techniques and incoherent beam combining techniques. The coherent beam combination technology is a method for improving the brightness of an output light beam by utilizing the coherence of laser and generating constructive interference by controlling the phase relation of each light-emitting unit. Although the coherent beam combination technology can effectively improve the beam quality of the semiconductor laser array, the method has high adjustment precision and is easily interfered by the external environment, and the high-power stable laser output is difficult to obtain. The spectrum beam combination technology in the incoherent beam combination technology avoids the defects, is relatively easy to implement, and is an effective method for improving the beam quality of the semiconductor laser array and improving the brightness.
The spectrum beam combination technology utilizes a dispersion element to simultaneously realize spatial overlapping of multiple paths of laser with different wavelengths in a near field and a far field, the laser is synthesized to be output by a single aperture, the integral beam quality after the beam combination is close to that of a single light-emitting unit, and the output power is N times of that of the single light-emitting unit. The spectrum beam combination technology is divided into an open-loop (without an output coupling mirror) structure and a closed-loop (with an output coupling mirror) structure, and the main difference between the two structures is that the wavelength locking modes of all the light-emitting units are different. Compared with a closed-loop spectrum beam combining structure, the open-loop spectrum beam combining structure realizes feedback locking of the light-emitting unit by using the 0-level diffraction beam of the grating, avoids dump and waste of the 0-level diffraction beam, and can well solve the problems of low power loss, low beam combining efficiency and the like in a-1-level diffraction beam feedback cavity adopted by the closed-loop structure.
Although the open-loop spectrum beam combining structure can well reduce power loss, due to the fact that 0-order diffraction efficiency of the grating is low, when the semiconductor array has an obvious smile effect, due to the influence of position deviation of light beams fed back to all the light emitting units, all the light emitting units are difficult to obtain enough feedback light beams at the same time, the problems that only part of the light emitting units can achieve wavelength locking, the quality of output light beams is poor and the like are caused, and even spectrum beam combining cannot be achieved in severe cases. The "smile" effect is an inevitable inherent problem in the semiconductor array packaging process, and greatly limits the application of the open-loop spectrum beam combination structure.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a spectrum beam combining device of a linear array semiconductor laser, which can realize effective external cavity feedback and stable wavelength locking of an open-loop spectrum beam combining structure by utilizing the angle adjustment and convergence of a separation concave reflector, can overcome the adverse effect of the single effect on the wavelength locking of the open-loop spectrum beam combining, and provides a new scheme for realizing stable open-loop spectrum beam combining for a conventional commercial semiconductor laser array.
The invention discloses a spectrum beam combining device of a linear array semiconductor laser, which comprises: the linear array semiconductor laser and the fast axis collimating lens, the slow axis collimating lens, the first cylindrical surface transmission lens and the diffraction grating are arranged along the optical axis of the linear array semiconductor laser in sequence; a second cylindrical transmission lens and a first concave reflector group are sequentially arranged in the 0-order diffraction beam direction of the diffraction grating, a second concave reflector group is arranged in the 1-order diffraction beam direction, and-1-order diffraction light of the diffraction grating is used as output light; the first concave reflecting mirror group and the second concave reflecting mirror group can adjust the angle.
As a further improvement of the present invention, the linear array semiconductor laser and the diffraction grating are disposed on a focal plane of the first cylindrical transmission lens, and the first concave mirror group and the diffraction grating are disposed on a focal plane of the second cylindrical transmission lens.
As a further improvement of the invention, the light transmission surfaces of the first cylindrical transmission lens and the second cylindrical transmission lens are both plated with antireflection films, and the transmittance is more than or equal to 99%; the focal lengths f of the first cylindrical surface transmission lens and the second cylindrical surface transmission lens are the same, so that a 4f telescopic system is formed; the first cylindrical transmission lens superposes light beams emitted by all light emitting units on the linear array semiconductor laser onto the diffraction grating, and the second cylindrical transmission lens superposes feedback light beams onto the diffraction grating.
As a further improvement of the invention, the first concave reflector group and the second concave reflector group are plated with high reflective films, and the reflectivity is more than 99%; the first concave reflector group and the second concave reflector group are respectively arranged in the direction perpendicular to the 0-order diffracted light beam direction and the 1-order diffracted light beam direction of the grating, and are used for respectively reflecting diffracted light beams incident on the first concave reflector group and feeding back the reflected light beams to the linear array semiconductor laser to form external cavity wavelength locking.
As a further improvement of the present invention, the first concave mirror group and the second concave mirror group each include two separate concave mirrors, and the two separate concave mirrors are obtained by separating one concave mirror from the center along the fast axis direction of the linear array semiconductor laser and are placed in close proximity; the two separated concave reflectors respectively adjust the angle according to the smile effect of the linear array semiconductor laser, so that feedback light returns to the light-emitting units corresponding to the linear array semiconductor laser to form effective feedback.
As a further improvement of the present invention, the curved surface of the first concave mirror group converges the diverging light beam in the fast axis direction along the fast axis direction of the linear array semiconductor laser, so that the light beam is fed back to the original light emitting unit, thereby improving the feedback efficiency and achieving stable wavelength locking of the light emitting unit.
As a further improvement of the invention, the front cavity surface of the linear array semiconductor laser is plated with an antireflection film, and the transmittance is more than or equal to 99 percent, so that the influence of inner cavity feedback is reduced, and the outer cavity wavelength locking is better realized.
As a further improvement of the invention, the fast axis collimating mirror is a cylindrical micro lens, and the slow axis collimating mirror is a cylindrical micro lens array; the light transmission surfaces of the fast axis collimating mirror and the slow axis collimating mirror are respectively coated with an antireflection film, and the transmittance is more than or equal to 99%; the fast axis collimating lens and the slow axis collimating lens are used for collimating fast and slow axes of laser output by the linear array semiconductor laser respectively, so that the divergence angle of a light beam is reduced.
As a further improvement of the invention, the diffraction grating and the optical axis are arranged according to the Littrow angle or the arrangement angle of the diffraction grating meets the condition that the light beam is incident close to the Littrow angle, so that the highest diffraction efficiency is obtained.
Compared with the prior art, the invention has the beneficial effects that:
1. the concave reflector provided by the invention has the function of converging the fast axis of the feedback light beam along the curved surface in the fast axis direction, so that more light beams return to the original light-emitting unit to form effective feedback, the wavelength of the light-emitting unit is locked more stably, and stable spectrum beam combination is realized;
2. the concave reflector group can adjust the angle according to the deviation of the light-emitting unit in the fast axis direction and the optical axis direction caused by the smile effect, so that the central light beam of the light-emitting unit with the position deviation vertically enters the concave reflector and returns to the original light-emitting unit to form effective feedback, and accurate wavelength locking is realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application, and obviously, the described embodiments are a part of the embodiments of the present invention, but not all embodiments. And therefore should not be considered as limiting the scope, from which other drawings may be derived by those of ordinary skill in the art without inventive faculty.
Fig. 1 is a front view of a spectral beam combining device of a linear array semiconductor laser according to embodiment 1 of the present invention;
fig. 2 is a top view of a spectral beam combining device of a linear array semiconductor laser according to embodiment 1 of the present invention;
FIG. 3 is a schematic view of the first concave mirror group or the second concave mirror group in embodiment 1 of the present invention;
FIG. 4 is a schematic diagram of beam feedback in the fast axis direction of a conventional spectral beam combining apparatus;
FIG. 5 is a schematic view of beam feedback in the fast axis direction of the spectrum beam combining apparatus according to the present invention;
fig. 6 is a schematic diagram of a spectrum beam combining device of a multi-single-tube semiconductor laser according to embodiment 2 of the present invention.
In the figure:
1. a linear array semiconductor laser; 2. a fast axis collimating mirror; 3. a slow axis collimating mirror; 4. a first cylindrical transfer lens; 5. a diffraction grating; 6. a second cylindrical transfer lens; 7. a first concave mirror group; 8. a second concave reflector group.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
The invention is described in further detail below with reference to the attached drawing figures:
example 1
As shown in fig. 1, the present invention provides a spectrum beam combining device of a linear array semiconductor laser, specifically comprising: the linear array semiconductor laser device comprises a linear array semiconductor laser 1, a fast axis collimating mirror 2, a slow axis collimating mirror 3, a first cylindrical surface transmission lens 4, a diffraction grating 5, a second cylindrical surface transmission lens 6, a first concave reflector group 7 and a second concave reflector group 8, wherein the first concave reflector group 7 and the second concave reflector group 8 respectively comprise two separated concave reflectors; the fast axis collimating lens 2, the slow axis collimating lens 3, the first cylindrical surface transmission lens 4, the diffraction grating 5, the second cylindrical surface transmission lens 6 and the first concave reflecting mirror 7 are sequentially arranged along the optical axis of the laser output by the linear array semiconductor laser 1, and the second concave reflecting mirror group 8 is arranged along the optical axis of the 1-order diffracted beam of the diffraction grating 5.
In this embodiment, the linear array semiconductor laser 1 has a slow axis direction along the horizontal direction and a fast axis direction perpendicular to the horizontal direction, and has a front cavity surface coated with an antireflection film with a transmittance of not less than 99%. The light transmission surfaces of the fast axis collimating mirror 2 and the slow axis collimating mirror 3 are coated with antireflection films, the transmittance is larger than or equal to 99%, and the light transmission lenses are used for collimating laser light emitted by the linear array semiconductor laser 1, reducing the divergence angle of the light beam and enabling the light beam to be incident on the cylindrical surface transmission lens 4 approximately in parallel.
The light transmission surface of the first cylindrical transmission lens 4 is coated with an antireflection film, the transmittance is more than or equal to 99%, the distances from the linear array semiconductor laser 1 to the diffraction grating 5 are both the focal lengths of the lenses, and the output light of each light-emitting unit of the linear array semiconductor laser 1 is converted into different angles along the slow axis direction and is superposed and incident on the diffraction grating 5; the diffraction grating 5 is placed at a Littrow angle to the optical axis to obtain the highest diffraction efficiency of the grating.
In the slow axis direction of the line semiconductor laser 1, the light beam incident on the diffraction grating 5 is diffracted, and then 0 th order diffracted light passes through the diffraction grating 5 and enters the second cylindrical transfer lens 6 at different angles. The light transmission surface of the second cylindrical transmission lens 6 is coated with an antireflection film, the focal length of the second cylindrical transmission lens 6 is equal to that of the first cylindrical transmission lens 4, and the distances from the second cylindrical transmission lens 6 to the diffraction grating 5 and the first concave reflector group 7 are both lens focal lengths. The light beams reflected by the first concave reflecting mirror group 7 are sequentially incident to the second transmission lens 6 and the diffraction grating 5, and part of the light is transmitted through the diffraction grating 5 and returns to the linear array semiconductor laser 1 to be used as feedback light for wavelength locking. The other part of light is diffracted by the diffraction grating 5, then enters the second concave mirror group 8 and is reflected back to the diffraction grating 5; the transmitted light of this portion becomes a part of the output beam, and the diffracted light returns to the line semiconductor laser 1 to be wavelength-locked as feedback light.
In the fast axis direction of the linear array semiconductor laser 1, because the curved surface of the separated concave reflector is along the direction, the light beam in the fast axis direction is reflected and converged by the curved surface and then fed back to the original light-emitting unit.
The semiconductor laser array chip packaging stress inevitably causes a smile effect, so that the light emitting direction of the light emitting unit has certain deviation from the optical axis in a non-spectral beam combining direction (namely the fast axis direction of the array). This situation can result in a reduced amount of feedback, a failure to lock in wavelength, or even a failure to form a spectrally combined beam, and a change to unwanted light. Therefore, as shown in fig. 3, the present invention can maximize the optical power fed back to the original light-emitting unit by adjusting the two concave mirrors of the first concave mirror group 7 and the second concave mirror group 8, and at this time, the respective angles are optimized, so as to realize stable wavelength locking and spectrum beam combining, and the combined laser is output along the-1 st order diffraction direction of the grating.
Fig. 4 is a schematic diagram of beam feedback in the fast axis direction of a conventional spectral beam combining device. The linear array semiconductor laser 1 only has collimation effect of the fast axis collimating mirror 2 in the fast axis direction, and when the light beam is fed back to the original light-emitting unit through the plane reflector 9, the radius of the light beam divergence in the fast axis direction is far larger than the size of the light-emitting unit, only part of the light beam participates in wavelength locking, and the light beam cannot be locked when the linear array semiconductor laser 1 has obvious smile effect.
Fig. 5 is a schematic diagram of light beam feedback of the spectrum beam combining device in the fast axis direction, in which the first concave mirror group 7 converges the fast axis of the feedback light beam along the curved surface in the fast axis direction, so that more light beams return to the original light-emitting unit to participate in wavelength locking, and the separated concave mirrors can adjust the angles respectively according to the smile effect, thereby making the wavelength locking of the light-emitting unit more stable and realizing stable spectrum beam combining.
Example 2
As shown in fig. 6, the present invention provides a spectrum beam combining device for a multiple single-tube semiconductor laser, which specifically includes: a plurality of single-tube semiconductor lasers are horizontally linearly arranged to be equivalent to the linear array semiconductor laser 1 of embodiment 1; the fast axis collimating lens 2, the slow axis collimating lens 3, the first cylindrical surface transmission lens 4, the diffraction grating 5, the second cylindrical surface transmission lens 6 and the first concave reflector group 7 are sequentially arranged along the optical axis of the laser beam output by the multi-single-tube semiconductor laser, the diffraction grating 5 and the optical axis are arranged according to the Littrow angle, and the second concave reflector group 8 is arranged on the optical axis of the 1-level diffraction beam of the diffraction grating 5. The front cavity surface of the single-tube semiconductor laser is plated with an antireflection film, and the transmittance is more than or equal to 99%. The light transmission surfaces of all the lenses are uniformly plated with an antireflection film, the transmittance is more than or equal to 99%, and the reflector is plated with a high-reflection film, the reflectivity is more than or equal to 99%. The first cylindrical transmission lens 4 and the second cylindrical transmission lens 6 have the same focal length to form a telescope system. The multi-single-tube semiconductor laser 1, the diffraction grating 5 and the first concave reflector group 7 are respectively arranged on the focal planes of the first cylindrical transmission lens 4 and the second cylindrical transmission lens 6.
Two concave reflectors of the first concave reflector group 7 and the second concave reflector group 8 which are separated are adjusted to enable the optical power fed back to the original light-emitting unit to be maximum, the respective angles to be optimal at the moment, stable wavelength locking and spectrum beam combination are achieved, and the laser after beam combination is output along the-1-order diffraction direction of the grating.
The present invention has been described in terms of the preferred embodiment, and it is not intended to be limited to the embodiment. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A spectrum beam combining device of a linear array semiconductor laser is characterized by comprising: the linear array semiconductor laser and the fast axis collimating lens, the slow axis collimating lens, the first cylindrical surface transmission lens and the diffraction grating are arranged along the optical axis of the linear array semiconductor laser in sequence; a second cylindrical transmission lens and a first concave reflector group are sequentially arranged in the 0-order diffraction beam direction of the diffraction grating, a second concave reflector group is arranged in the 1-order diffraction beam direction, and-1-order diffraction light of the diffraction grating is used as output light; the first concave reflecting mirror group and the second concave reflecting mirror group can adjust the angle.
2. The linear semiconductor laser spectral beam combining device of claim 1, wherein the linear semiconductor laser and the diffraction grating are disposed at a focal plane of the first cylindrical transmission lens, and the first concave mirror group and the diffraction grating are disposed at a focal plane of the second cylindrical transmission lens; the first concave reflector group and the second concave reflector group reflect diffracted light beams incident thereon and feed back to the linear array semiconductor laser to form external cavity wavelength locking.
3. The spectral beam combining device of a linear array semiconductor laser as claimed in claim 1 or 2, wherein the first and second concave mirror groups each comprise two separate concave mirrors, and the two separate concave mirrors are one concave mirror separated from the center in the fast axis direction of the linear array semiconductor laser; the two separated concave reflectors respectively adjust the angle according to the smile effect of the linear array semiconductor laser, so that feedback light returns to the corresponding light-emitting units of the linear array semiconductor laser to form effective feedback; meanwhile, the curved surface of the first concave reflector group converges the divergent light beam in the fast axis direction along the fast axis direction of the linear array semiconductor laser, so that the light beam is fed back to the original light-emitting unit.
4. A spectral beam combining device for a linear array semiconductor laser as claimed in claim 1 or 2, wherein the front cavity surface of said linear array semiconductor laser is coated with an anti-reflection film, and the transmittance is not less than 99%.
5. A spectral beam combining device for a linear array semiconductor laser as defined in claim 1 or 2, wherein said fast axis collimator is a cylindrical microlens, and said slow axis collimator is a cylindrical microlens array; and the light transmission surfaces of the fast axis collimating mirror and the slow axis collimating mirror are uniformly coated with antireflection films, and the transmittance is more than or equal to 99%.
6. A spectral beam combining device of a linear array semiconductor laser as claimed in claim 1 or 2, wherein said diffraction grating is placed at Littrow angle with the optical axis.
7. The linear array semiconductor laser spectral beam combining device according to claim 1 or 2, wherein the light transmission surfaces of the first cylindrical transmission lens and the second cylindrical transmission lens are both coated with an antireflection film, and the transmittance is greater than or equal to 99%; the focal lengths f of the first cylindrical surface transmission lens and the second cylindrical surface transmission lens are the same, so that a 4f telescopic system is formed; the first cylindrical transmission lens superposes light beams emitted by all light emitting units on the linear array semiconductor laser onto the diffraction grating, and the second cylindrical transmission lens superposes feedback light beams onto the diffraction grating.
8. A spectral beam combining device for a linear array semiconductor laser as claimed in claim 1 or 2, wherein said first and second sets of concave mirrors are coated with highly reflective films with reflectivity >99%.
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| CN202211678018.8A CN115967014A (en) | 2022-12-26 | 2022-12-26 | Spectrum beam combining device of linear array semiconductor laser |
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| CN202211678018.8A CN115967014A (en) | 2022-12-26 | 2022-12-26 | Spectrum beam combining device of linear array semiconductor laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116683292A (en) * | 2023-08-03 | 2023-09-01 | 山东大学 | Semiconductor laser spectrum beam combining device and method based on thin film filter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116683292A (en) * | 2023-08-03 | 2023-09-01 | 山东大学 | Semiconductor laser spectrum beam combining device and method based on thin film filter |
| CN116683292B (en) * | 2023-08-03 | 2023-11-24 | 山东大学 | Semiconductor laser spectrum beam combining device and method based on thin film filter |
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