CN115966530A - Power module and electronic equipment - Google Patents

Abstract

The application provides a power module and electronic equipment, and relates to the technical field of electronic device packaging. This power module includes the radiating bottom plate: the insulating substrate is positioned on the heat dissipation bottom plate, wherein a metal layer is arranged on the surface of the insulating substrate; a plurality of chips arranged on the insulating substrate and electrically connected with the metal layer; the plurality of chips comprise a plurality of upper tubes and a plurality of lower tubes which are connected in parallel, the number of the upper tubes and the number of the lower tubes are the same, and the upper tubes and the lower tubes are arranged in an array; and the metal terminal is electrically connected with the metal layer. The power module and the electronic equipment have the effects of avoiding local overhigh temperature and improving the stability of devices.

Description

Power module and electronic equipment

Technical Field

The application relates to the technical field of electronic device packaging, in particular to a power module and electronic equipment.

Background

The power module for the vehicle is a core component of an electric driving device in a new energy automobile, has the characteristics of high integration level and high reliability, and meets the requirements of light weight and service life of the whole automobile.

In the existing silicon carbide power module for vehicles, because the current capacity of a single chip is weak, the power density is generally improved by adopting a multi-chip parallel connection mode. However, when multiple chips work together inside the power module, the current distribution of the chips is not uniform, so that the power module operates in a derated manner.

However, the power module may generate a large amount of heat during a long time operation, and the chip temperature of the multi-chip power module may be unevenly distributed, so that the local temperature may be too high, and the power module may be damaged.

In summary, there is a problem in the prior art that the power module is damaged due to an excessively high temperature.

Disclosure of Invention

An object of the application is to provide a power module and an electronic device to solve the problem that the power module is damaged due to overhigh temperature in the prior art.

In order to achieve the above purpose, the embodiments of the present application employ the following technical solutions:

in a first aspect, an embodiment of the present application provides a power module, where the power module includes:

a heat dissipation bottom plate:

the insulating substrate is positioned on the heat dissipation bottom plate, wherein a metal layer is arranged on the surface of the insulating substrate;

a plurality of chips disposed on the insulating substrate and electrically connected to the metal layer; the plurality of chips comprise a plurality of upper tubes and a plurality of lower tubes which are connected in parallel, the number of the upper tubes and the number of the lower tubes are the same, and the upper tubes and the lower tubes are arranged in an array;

a metal terminal electrically connected with the metal layer.

Optionally, the metal terminal includes a power terminal, the power terminal includes a dc positive terminal, a dc negative terminal, and an ac terminal, and the power module further includes an upper bridge metal frame and a lower bridge metal frame; wherein, the first and the second end of the pipe are connected with each other,

the first end of the upper tube is electrically connected with the direct current positive terminal, and the upper bridge metal frame is respectively electrically connected with the second end of the upper tube, the first end of the lower tube and the alternating current terminal; the lower bridge metal frame is respectively connected with the second end of the lower tube and the direct current negative terminal.

Optionally, solder ball implantation holes are disposed in both the upper bridge metal frame and the lower bridge metal frame, and the upper bridge metal frame and the lower bridge metal frame are electrically connected to the upper tube and/or the lower tube through the solder ball implantation holes.

Optionally, the power module further includes a temperature sensing resistor, the temperature sensing resistor is disposed at a position close to the chip, the metal terminal includes a temperature measurement output terminal, and the temperature sensing resistor is electrically connected to the temperature measurement output terminal.

Optionally, the surface of the heat dissipation bottom plate is directly connected to the insulating substrate, and a plurality of protrusions are disposed on the bottom surface of the heat dissipation bottom plate at intervals.

Optionally, the heat dissipation bottom plate is further integrated with a water-cooling heat dissipation base, the water-cooling heat dissipation base comprises cooling liquid therein, and the protrusions are in contact with the cooling liquid.

Optionally, the metal terminal includes a power terminal and a signal terminal, the power terminal includes a dc negative terminal, an ac terminal and two dc positive terminals, the two dc positive terminals are respectively located on two sides of the dc negative terminal, and the two dc positive terminals are symmetrically disposed.

Optionally, the chip is a switch chip, the power module further includes a first kelvin bus bar and a second kelvin bus bar, the gate and the source of the upper tube are both electrically connected to the first kelvin bus bar, and the gate and the source of the lower tube are both electrically connected to the second kelvin bus bar.

Optionally, the chips are arranged in a double-row array, and each row of chips is arranged in a mirror image manner.

On the other hand, an embodiment of the present application further provides an electronic device, where the electronic device includes the power module described above.

Compared with the prior art, the method has the following beneficial effects:

the application provides a power module and electronic equipment, this power module includes radiating bottom plate: the insulating substrate is positioned on the heat dissipation bottom plate, wherein a metal layer is arranged on the surface of the insulating substrate; a plurality of chips arranged on the insulating substrate and electrically connected with the metal layer; the plurality of chips comprise a plurality of upper tubes and a plurality of lower tubes which are connected in parallel, the number of the upper tubes and the number of the lower tubes are the same, and the upper tubes and the lower tubes are arranged in an array; and the metal terminal is electrically connected with the metal layer. On the one hand, because the heat dissipation bottom plate is arranged in the power module, the rapid heat dissipation can be realized through the heat dissipation bottom plate, and the situation that the local temperature is too high can be avoided. On the other hand, because top tube and low tube all are the array and arrange, consequently can reduce the unbalanced degree of electric current, avoid appearing certain chip electric current too big, lead to the operation to appear the too high condition of local temperature.

In order to make the aforementioned objects, features and advantages of the present application comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and it will be apparent to those skilled in the art that other related drawings can be obtained from the drawings without inventive effort.

Fig. 1 is a schematic circuit diagram of a power module according to an embodiment of the present invention.

Fig. 2 is a top view of a chip layout of a power module according to an embodiment of the invention.

Fig. 3 is an overall view of a power module provided by an embodiment of the invention.

Fig. 4 is a top view of a complete layout of a power module provided by an embodiment of the invention.

Fig. 5 is a back side view of a silicon carbide power module provided by an embodiment of the present invention.

Fig. 6 is an overall view of a silicon carbide power module provided by an embodiment of the present invention.

Reference numbers:

1-a first direct current positive terminal; 2-a direct current negative terminal; 3-a second direct current positive terminal; 4-leading out a bonding wire from the grid; 5-Kelvin source electrode leading out bonding wire; 6-an insulating substrate; 7-upper tube drain leading-out terminal; 8-upper tube grid leading-out terminal; 9-upper tube kelvin source lead-out terminal; 10-an alternating current terminal; 11-lower tube kelvin source lead-out terminal; 12-a lower tube gate lead-out terminal; 13-a first temperature sensing pin; 14-a second temperature sensing pin; 15-temperature sensing resistor; 16-a chip; 17-a first kelvin busbar; 18-a gate drive signal bus bar; 19-underbridge metal frame; 20-upper bridge metal frame; 21-a bump; 22-plastic packaging the shell; 23-positioning a groove; 24-heat dissipation bottom plate.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present application, as presented in the figures, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or apparatus that comprises the element.

In the description of the present application, it should be noted that the terms "upper", "lower", "inner", "outer", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally found in use of products of the application, and are used only for convenience in describing the present application and for simplification of description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present application.

In the description of the present application, it is also to be noted that, unless otherwise explicitly specified or limited, the terms "disposed" and "connected" are to be interpreted broadly, e.g., as being either fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.

Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.

As described in the background art, at present, since the current capacity of a single chip (i.e., the current peak value that the chip can pass through) is relatively weak, the current capacity of a power module is generally increased by using a multi-chip parallel connection method.

However, when the multi-chip is operated, the multi-chip current distribution may be uneven, which may cause a local temperature to be too high, and may eventually cause the power module to be damaged.

For example, the power module is a single-phase half-bridge structure, and when a single chip is used, the upper bridge and the lower bridge in the single-phase half-bridge structure each include a switching tube, and the current capacity is only the current of one switching tube. When a plurality of switching tubes are connected in parallel, the upper bridge comprises a plurality of switching tubes, the lower bridge also comprises a plurality of switching tubes, and the current capacity of the power module is the sum of the current capacities of the switching tubes, so that the overall current capacity of the power module is improved. However, this method has a certain disadvantage that ideally, the current between a plurality of chips connected in parallel should be equal, however, in actual operation, the current between the chips may be unevenly distributed, resulting in uneven distribution of the chip temperature.

In view of this, in order to solve the above problem, the present application provides a power module, in which a heat dissipation bottom plate is disposed in the power module and a plurality of chips are disposed in an arrangement manner, so as to avoid the occurrence of a situation that a local temperature of a part of the chips is too high, and prevent the power module from being damaged.

The following is an exemplary illustration of the power module provided in the present application:

as an optional implementation manner, the power module includes a heat dissipation bottom plate, an insulating substrate 6, a plurality of chips 16 and a metal terminal, wherein the insulating substrate 6 is located on the heat dissipation bottom plate, and a metal layer is disposed on a surface of the insulating substrate 6, the plurality of chips 16 are all located on the insulating substrate 6 and electrically connected to the metal layer, and the plurality of chips 16 include a plurality of upper tubes connected in parallel and a plurality of lower tubes connected in parallel, the number of the upper tubes is the same as that of the lower tubes, the upper tubes and the lower tubes are both arranged in an array, and the metal terminal is electrically connected to the metal layer.

Through this mode of setting up, because in a plurality of chips 16, the top tube all is the array with the low tube and arranges, consequently can reduce the unbalanced degree of electric current, avoid appearing certain chip 16 electric current too big, lead to the operation local temperature too high condition to appear. And, still be provided with the heat dissipation bottom plate in power module, can realize dispelling the heat fast through the heat dissipation bottom plate, consequently, even the condition that 16 temperature distributions of chip are uneven appears, and because can strengthen the heat-sinking capability through the heat dissipation bottom plate, consequently can avoid 16 high temperatures of chip, reach the purpose that prevents power module damage.

It should be noted that the chip 16 described herein may be a switching chip 16, for example, the chip 16 may be a MOS transistor, a triode, or the like, and the plurality of chips 16 form a single-phase half-bridge structure.

The present application does not limit the material and number of the chips 16, and for example, the silicon carbide chip 16 may be used as the switching chip 16. Also, the number of chips 16 may be 10, 20, etc. Referring to fig. 1, the number of chips 16 is 20 for example, where the chips 16 are all used as upper tubes, i.e., upper bridge arms of a unidirectional half-bridge structure, and the chips 16 are all used as lower tubes, i.e., lower bridge arms of the unidirectional half-bridge structure, so that each bridge arm is composed of 10 chips 16 connected in parallel. In the figure, G1 and G2 respectively represent gate terminals, S1 and S2 respectively represent source terminals, and the on state of the chip 16 can be controlled according to the level of the input voltage to the G1 and G2 terminals.

In one implementation, referring to fig. 2, all the upper tubes are arranged in a double-row array, and each row of chips 16 is arranged in a mirror image, and all the lower tubes are arranged in a double-row array, and each row of chips 16 is arranged in a mirror image. By the double-row mirror image arrangement of the chips, on one hand, the imbalance degree of the current can be reduced, so that the current flowing through each chip 16 is more uniform, and the condition that the current of the chip 16 is overlarge is avoided; on the other hand, the arrangement mode of mirror image arrangement is adopted, so that the bonding wires can be led out of the chip 16 conveniently, and the installation is convenient.

Moreover, in the insulating substrate 6 provided by the present application, an insulating ceramic substrate can be adopted, and the insulating ceramic substrate can be divided into three layers, wherein the surface layer is a metal layer, which can play a role in electric conduction and heat conduction, the middle layer is a silicon nitride layer, and the bottom layer is also a metal layer, which is used for improving the heat conduction capability. Alternatively, the metal layer may be a copper layer; on the basis, the insulating substrate is a double-sided copper-clad silicon nitride ceramic substrate.

It will be appreciated that the connection to the various metal terminals may be made through a metal layer on the surface of the insulating substrate 6, and in this application, the metal terminals are connected to the metal layer of the insulating substrate 6 by a welding or ultrasonic bonding process. Of course, in order to prevent short circuit between the metal terminals, the metal layer on the insulating substrate 6 may be disposed in different regions, each region is isolated from the other region, and each region is used for connecting different metal terminals to achieve connection with different functions.

As shown in fig. 2 and fig. 3, the appearance structure of the power module provided by the present application is rectangular, the metal terminal includes a power terminal and a signal terminal, the power terminal includes a dc negative terminal 2, an ac terminal 10 and two dc positive terminals, the two dc positive terminals are a first dc positive terminal 1 and a second dc positive terminal 2, wherein the dc negative terminal 2 and the two dc positive terminals are disposed on a first side of the power module, a module positive electrode and a module negative electrode are led out in parallel, the two dc positive terminals are disposed on two sides of the dc negative terminal 2, and the two dc positive terminals are symmetrically disposed. Through the mode that sets up two direct current positive terminals symmetry, can reduce the parasitic inductance of whole power return circuit, further can reduce turn-off voltage spike and switching oscillation, promote power module's performance. The ac terminal 10 and the signal terminal are located on the second side of the power module, and the signal terminal is divided into two parts for the convenience of wiring and the miniaturization of the whole power module, and the two signal terminals are located on the two sides of the ac terminal 10.

Specifically, the signal terminals include an upper tube drain lead terminal 7, an upper tube gate lead terminal 8, an upper tube kelvin source lead terminal 9, a lower tube kelvin source lead terminal 11, a lower tube gate lead terminal 12, a first temperature sensing pin 13, and a second temperature sensing pin 14. The upper tube drain lead-out terminal 7, the upper tube gate lead-out terminal 8 and the upper tube kelvin source lead-out terminal 9 are located on one side of the alternating current terminal 10, and the lower tube kelvin source lead-out terminal 11, the lower tube gate lead-out terminal 12, the first temperature sensing pin 13 and the second temperature sensing pin 14 are located on the other side of the alternating current terminal 10.

In one implementation, to further improve the current imbalance problem, please refer to fig. 4, the power module further includes an upper bridge metal frame 20 and a lower bridge metal frame 19; wherein, the first end of the upper tube is electrically connected with the positive terminal of the direct current, and the upper bridge metal frame 20 is respectively electrically connected with the second end of the upper tube, the first end of the lower tube and the alternating current terminal 10; the lower bridge metal frame 19 is electrically connected to the second end of the lower tube and the dc negative terminal 2, respectively. It will be appreciated that the upper and lower tubes are electrically connected by a metal frame of gate lead out bond wires 4.

When the chip 16 is an MOS transistor, the drain of the upper transistor is electrically connected to the dc positive terminal, and the upper bridge metal frame 20 is electrically connected to the source of the upper transistor, the drain of the lower transistor, and the ac terminal 10, respectively; the lower bridge metal frame 19 is electrically connected to the source of the lower tube and the dc negative terminal 2, respectively.

The upper bridge metal frame 20 and the lower bridge metal frame 19 are connected with the power loop, so that the parasitic inductance of the power loop can be reduced, meanwhile, as the chip 16 is directly connected with the metal frame, the heat is homogenized through the heat conducting capacity of the metal frame, the problems of temperature gradient (namely local chip 16 overheating) and current imbalance of the chip 16 are avoided, and the reliability of the power chip 16 is improved.

In addition, in order to ensure that the connection between the chip 16 and the metal frame is tighter, in one implementation, the upper bridge metal frame 20 and the lower bridge metal frame 19 are both provided with solder ball implanting holes, and the upper bridge metal frame 20 and the lower bridge metal frame 19 are electrically connected to the upper tube and/or the lower tube through the solder ball implanting holes. It can be understood that the solder ball can be implanted into the solder ball implanting hole, and after the solder ball is implanted, the chip 16 and the metal frame can be directly welded, so that the connection between the chip 16 and the metal frame is stable, the heat conduction can be more effectively realized, and the temperature of the chip 16 can be balanced. The metal frame can be a copper frame, and understandably, the tin-implanted copper frame is arranged, so that temperature balance can be realized, parasitic inductance is reduced, and the performance and reliability of the power module are improved.

In the present application, in order to increase the switching speed of the chip 16, a kelvin source connection method is adopted when the chip 16 is connected. The power module further comprises a first Kelvin busbar 17 and a second Kelvin busbar, the grid electrode and the source electrode of the upper tube are electrically connected with the first Kelvin busbar 17, and the grid electrode and the source electrode of the lower tube are electrically connected with the second Kelvin busbar. And the grid and the source of the upper tube and the lower tube are electrically connected with the Kelvin busbar through a Kelvin source lead-out bonding wire 5.

In specific implementation, the power module further comprises a gate driving signal bus bar 18, wherein all gates of the upper tube are led out to the gate driving signal bus bar 18 by adopting bonding wires, and then led out to the first kelvin bus bar 17 by adopting the bonding wires, and meanwhile, the source electrode is also led out to the first kelvin bus bar 17 by adopting the bonding wires and is led out to the upper tube kelvin source electrode leading-out terminal 9 by adopting the bonding wires; all the lower tube gates are led out to a lower tube gate lead-out terminal 12, and the lower tube Kelvin source stages are led out to the second Kelvin busbar, and then led out to a lower tube Kelvin source lead-out terminal 11 through the first-stage bonding wire.

In addition, in order to detect the temperature of the chip 16 in real time, the power module further includes a temperature sensing resistor 15, the temperature sensing resistor 15 may be a platinum resistor temperature sensor, and the temperature sensing resistor 15 is disposed at a position close to the chip 16, so that accurate temperature measurement can be achieved by disposing the platinum resistor temperature sensor at a position close to the chip. And, the metal terminal includes the temperature measurement output terminal, and this temperature measurement output terminal includes first temperature sensing pin 13 and second temperature sensing pin 14, and temperature sensing resistor 15 is connected with first temperature sensing pin 13, second temperature sensing pin 14 electricity respectively, and then can accurately estimate the junction temperature of chip 16.

The number of the temperature sensing resistors 15 is not limited in the present application, and for example, the number of the temperature sensing resistors 15 may be 1, and the power module may be protected by controlling the power module to stop operating when the temperature is too high through measurement of the temperature sensing resistors 15. Or, the number of the temperature sensing resistors 15 may be equal to the number of the chips 16, and thus, the temperature measurement of one chip 16 is realized through one temperature sensing resistor 15. When the temperature of any chip 16 is too high, the power module is controlled to stop working.

In an alternative implementation manner, in order to improve the heat dissipation effect, the surface of the heat dissipation base plate is directly connected to the insulating substrate 6, referring to fig. 5, a plurality of protrusions 21 are disposed at intervals on the bottom surface of the heat dissipation base plate 24. The protrusion 21 may be a pin fin structure, thereby improving heat dissipation efficiency.

Optionally, the heat dissipation base plate 24 is further integrated with a water-cooling heat dissipation base, the water-cooling heat dissipation base includes a cooling liquid therein, the protrusion 21 contacts with the cooling liquid, and further increases a heat exchange area, and the surface of the heat dissipation base plate 24 is directly welded with an insulating ceramic substrate, so as to shorten a heat transfer path, reduce a power module crusting thermal resistance, and improve the overall heat dissipation efficiency.

Certainly, the power module further includes a plastic package housing 22, please refer to fig. 6, two sides of the plastic package housing 22 are provided with positioning grooves 23, which play a role in positioning when the metal connecting member fixes the power module and the water tank. The bottom of the plastic package shell 22 is provided with a fixing pin, which is convenient for the accurate positioning of the power module in the water tank.

Based on the foregoing implementation manner, an embodiment of the present application further provides a power module manufacturing method, where the method includes:

s1, manufacturing a solder mask layer by using photosensitive solder mask ink, so that the chip and the temperature sensing resistor are convenient to position and weld;

s2, welding the chip and the insulating ceramic substrate by adopting a vacuum reflow soldering process;

s3, connecting a grid electrode and a source electrode of the chip by adopting an ultrasonic bonding process;

s4, welding the metal frame, the chip and the insulating ceramic substrate by adopting a vacuum reflow soldering process;

s5, connecting the metal terminal and the insulating ceramic substrate by adopting an ultrasonic bonding process;

s6, welding the water-cooling heat dissipation base by adopting a vacuum reflow soldering process;

and S7, forming the plastic package shell by adopting a rotary die packaging process.

Moreover, the present application also provides an electronic device, which includes the above power module, for example, the electronic device may be an in-vehicle device.

To sum up, the present application provides a power module and an electronic device, the power module includes a heat dissipation base plate: the insulating substrate is positioned on the heat dissipation bottom plate, wherein a metal layer is arranged on the surface of the insulating substrate; a plurality of chips arranged on the insulating substrate and electrically connected with the metal layer; the plurality of chips comprise a plurality of upper tubes and a plurality of lower tubes which are connected in parallel, the number of the upper tubes and the number of the lower tubes are the same, and the upper tubes and the lower tubes are arranged in an array; and the metal terminal is electrically connected with the metal layer. On the one hand, because the heat dissipation bottom plate is arranged in the power module, the rapid heat dissipation can be realized through the heat dissipation bottom plate, and the situation that the local temperature is too high can be avoided. On the other hand, because the upper tube all is array arrangement with the low tube, consequently can reduce the unbalanced degree of electric current, avoid appearing certain chip electric current too big, lead to the operation to appear the too high condition of local temperature.

The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

It will be evident to those skilled in the art that the present application is not limited to the details of the foregoing illustrative embodiments, and that the present application may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the application being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.

Claims (10)

1. A power module, characterized in that the power module comprises:

a heat dissipation bottom plate:

the insulating substrate is positioned on the heat dissipation bottom plate, and a metal layer is arranged on the surface of the insulating substrate;

a plurality of chips disposed on the insulating substrate and electrically connected to the metal layer; the plurality of chips comprise a plurality of upper tubes and a plurality of lower tubes which are connected in parallel, the number of the upper tubes and the number of the lower tubes are the same, and the upper tubes and the lower tubes are arranged in an array;

a metal terminal electrically connected with the metal layer.

2. The power module of claim 1, wherein the metal terminals comprise power terminals including a positive dc terminal, a negative dc terminal, and an ac terminal, the power module further comprising an upper bridge metal frame and a lower bridge metal frame; wherein the content of the first and second substances,

the first end of the upper tube is electrically connected with the direct current positive terminal, and the upper bridge metal frame is respectively electrically connected with the second end of the upper tube, the first end of the lower tube and the alternating current terminal; the lower bridge metal frame is respectively connected with the second end of the lower tube and the direct current negative terminal.

3. The power module of claim 2, wherein the upper bridge metal frame and the lower bridge metal frame are each provided with a solder ball implanting hole, and the upper bridge metal frame and the lower bridge metal frame are electrically connected to the upper tube and/or the lower tube through the solder ball implanting holes.

4. The power module of claim 1, further comprising a temperature-sensing resistor disposed proximate to the chip, wherein the metal terminal includes a temperature measurement output terminal, and wherein the temperature-sensing resistor is electrically connected to the temperature measurement output terminal.

5. The power module of claim 1, wherein the surface of the heat-dissipating base plate is directly connected to the insulating substrate, and the bottom surface of the heat-dissipating base plate is provided with a plurality of protrusions arranged at intervals.

6. The power module of claim 5, wherein the heat sink base plate further integrates a water-cooled heat sink base including a coolant therein, the protrusions being in contact with the coolant.

7. The power module of claim 1, wherein the metal terminals comprise a power terminal and a signal terminal, the power terminal comprises a dc negative terminal, an ac terminal, and two dc positive terminals, the two dc positive terminals are respectively located at two sides of the dc negative terminal, and the two dc positive terminals are symmetrically arranged.

8. The power module of claim 7, wherein the chip is a switching chip, the power module further comprising a first Kelvin busbar and a second Kelvin busbar, wherein gates and sources of the upper tubes are electrically connected to the first Kelvin busbar, and wherein gates and sources of the lower tubes are electrically connected to the second Kelvin busbar.

9. The power module of claim 1 wherein the chips are arranged in a double row array with each row of chips being mirrored.

10. An electronic device, characterized in that the electronic device comprises a power module according to any one of claims 1 to 9.

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