CN115939248A - Infrared absorption thermal battery - Google Patents
Infrared absorption thermal battery Download PDFInfo
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- CN115939248A CN115939248A CN202111146828.4A CN202111146828A CN115939248A CN 115939248 A CN115939248 A CN 115939248A CN 202111146828 A CN202111146828 A CN 202111146828A CN 115939248 A CN115939248 A CN 115939248A
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Abstract
An infrared absorption thermal battery, called an infrared thermal battery or a thermal battery for short, is composed of a thermal battery diaphragm (Hd) made by overlapping a plurality of groups of metal films and semiconductor films, an insulating outer packaging layer (MB), fastening Micropores (MK), a positive electrode lug JC +, a negative electrode lug JC-, and an internal connection wire (LX); the thermal battery diaphragm (Hd) is provided with a plurality of fastening Micropores (MK), the thermal battery diaphragm (Hd) is coated by the insulating outer packaging layer (MB), and the fastening Micropores (MK) are filled; the positive electrode lug Jx + and the negative electrode lug Jx-are respectively adhered and embedded on the outer surface of the insulating outer packaging layer (MB), are connected with two electrode film layers of a thermal battery diaphragm (Hd) through an internal connection wire (LX), and are matched with an energy storage device to be used in daily mobile electric appliances such as non-charging mobile phones, clocks, shavers, mobile phones, computers and the like and other electricity utilization occasions of instruments.
Description
Technical Field
The invention belongs to the technical field of electronic information power supplies, and relates to an infrared absorption thermal battery.
Background
At present, the photovoltaic cell of visible light is applied in a large scale, but daily mobile electric appliances such as mobile phones, handheld computers, shavers, clocks and the like are inconvenient to charge by the photovoltaic cell, and cannot be charged indoors and at night; the temperature difference power generation board can generate power only by temperature difference, has low efficiency and is inconvenient to apply to mobile electric appliances; the infrared detection and control have many research applications, but the infrared heat absorption thermal battery is not developed and applied.
If a self-powered mobile phone power supply which converts natural space energy into electric energy can be developed, the problem of mobile phone power supply is solved, people do not worry about mobile phone charging every day, the trouble that the mobile phone needs to be charged every day is thoroughly solved, the problem of charging and supplying power to daily mobile electric appliances is solved, and great convenience is brought to life and work of people.
Disclosure of Invention
The invention researches and manufactures a thermal battery principle scheme for absorbing heat radiation infrared rays, namely an infrared absorption thermal battery, which is called an infrared thermal battery for short, and is formed by overlapping a plurality of groups of nano quantized thickness thin films, namely a thin film overlapping thermal battery or a thin film thermal battery for short.
The principle of the infrared absorption thermal battery of the invention: the multilayer semiconductor film layer and the metal film layer made of different materials are overlapped according to a certain rule, the infrared radiation heat energy in the space is absorbed to convert the electric energy, and the visible light conversion electric energy can also be absorbed on the surface layer.
The infrared absorption thermal battery has the principle structure shown in attached figures 1 and 2, and the whole packaging structure shown in attached figure 4, and is characterized by consisting of a thermal battery diaphragm (Hd) formed by overlapping a plurality of conductive thin film layers, an insulating outer packaging layer (MB)), fastening Micropores (MK), a positive electrode lug Jx +, a negative electrode lug Jx-and an internal connection wire (LX); the structural relationship is: the thermal battery diaphragm (Hd) is formed by superposing X groups on a basic unit thermal battery thin film group formed by superposing a metal thin film layer 1 (J1), a p-type semiconductor material thin film layer (Mp), an n-type semiconductor material thin film layer (Mn) and a metal thin film layer 2 (J2); the metal thin film layer 1 (J1), the p-type semiconductor material thin film layer (Mp), the n-type semiconductor material thin film layer (Mn) and the metal thin film layer 2 (J2) of the basic unit thermal battery thin film group are fastened and superposed by a coating or a plating to form a basic unit thermal battery diaphragm, and the basic unit thermal battery diaphragm (thin film group) is fastened and superposed by a plurality of X pieces (groups) to form a thermal battery diaphragm (Hd); countless fastening Micropores (MK) are punched on the thermal battery diaphragm (Hd), the thermal battery diaphragm (Hd) is coated by the insulating outer packaging layer (MB), and the fastening Micropores (MK) are filled with the insulating outer packaging layer material; the positive electrode lug Jx + and the negative electrode lug Jx-are respectively pasted and embedded on the outer surface of the insulating outer packaging layer (MB), and are respectively connected with two electrode thin film layers of a thermal battery diaphragm (Hd) through an internal connection wire (LX); the superposition number X of a basic unit thermal battery sheet (group) of the thermal battery sheet (Hd) is selected according to the voltage grade, and when the X is 1, the basic unit thermal battery is formed; when the compactness and the adhesion of the laminated layers are high, the fastening micropores (Mk) are omitted, so that the infrared absorption thermal battery without the fastening micropores is formed.
In order to increase the absorption area of the film layer under the limited volume and improve the efficiency and the current density, the thermal battery diaphragm (Hd) is wound for a plurality of turns to form a multi-turn winding type thermal battery.
The basic unit thermal battery diaphragm is shown in the attached drawing 1 in the structural principle, and is characterized by comprising a metal thin film layer 1 (J1), a p-type semiconductor material thin film layer (Mp), an n-type semiconductor material thin film layer (Mn) and a metal thin film layer 2 (J2), wherein the structural relation is formed by fastening and overlapping the J1, mp, mn and J2 thin film layers in sequence; namely, the unit cell thermal battery film group is formed by tightly overlapping the film layers of the unit cell thermal battery film group.
The thermal battery diaphragm (Hd) has the structural principle shown in the attached figure 2, and is characterized by being formed by overlapping a plurality of X pieces (groups) of basic unit thermal battery diaphragms (groups), and the structural relationship is as follows: a plurality of thin film layers are sequentially overlapped according to J1, mp, mn, J2, a plurality of layers, J1, mp, mn and J2, a plurality of groups of thin film layers are overlapped by coating films or coating films to form a thermal battery diaphragm (Hd), a plurality of fastening Micropores (MK) are punched on the thermal battery diaphragm (Hd), insulating hot melt materials are filled in the fastening Micropores (MK), and the thin film layers are fastened by hot pressing; selecting the superposition number X of the film group of the basic unit thermal battery according to the voltage grade of the thermal battery, wherein the using voltage is X times of the voltage of the diaphragm of the basic unit thermal battery;
the infrared absorption thermal battery without the fastening micropores has the structure and the cladding schematic diagram shown in the attached drawing 3, and is characterized in that film layers are densely overlapped by adopting coating layers, fastening Micropores (MK) and micropore fastening filling materials on an infrared absorption thermal battery diaphragm (Hd) are omitted, and other structures are similar to the infrared absorption thermal battery shown in the attached drawings 1, 2 and 4; the heat battery comprises a thermal battery diaphragm (Hd), an insulating outer packaging layer (MB)), fastening Micropores (MK), a positive electrode lug plate Jx +, a negative electrode lug plate Jx-and an internal connection wire (LX); the structural relationship is: the thermal battery diaphragm (Hd) is formed by superposing X groups on a basic unit thermal battery diaphragm group formed by superposing a metal thin film layer 1 (J1), a p-type semiconductor material thin film layer (Mp), an n-type semiconductor material thin film layer (Mn) and a metal thin film layer 2 (J2), and the thermal battery diaphragm (Hd) is coated by an insulating outer packaging layer (MB); the positive electrode lug Jx + and the negative electrode lug Jx-are respectively pasted and embedded on the outer surface of the insulating outer packaging layer (MB), and are respectively connected with two electrode thin film layers of a thermal battery diaphragm (Hd) through an internal connection wire (LX); the number X of the overlapped membranes of the basic unit thermal battery is selected according to the voltage grade of the thermal battery, and when X is 1, the basic unit thermal battery without fastening micropores is formed.
The invention principle is as follows: the infrared absorption thermal battery of the invention has the principle that the infrared energy is converted into electric energy by absorbing heat radiation, the infrared belongs to electromagnetic waves, and far infrared, near infrared, visible light and ultraviolet belong to electromagnetic waves; the film layers of the thermal battery diaphragm (Hd) are formed by overlapping and combining metal films and semiconductor material films with different reflection, refraction and electric conduction properties, the thickness of each film layer accords with the quantum dot effect size, the film layers are combined according to a certain rule, the surfaces of all layers of the thermal battery film form high-transmission receiving radiation, infrared antireflection is carried out to reduce energy reflection, the film layers absorb energy to excite electrons to jump to a high energy level, and under the action of lamination density difference and an interface electric field, the electrons flow unidirectionally to generate voltage and current.
Drawings
FIG. 1 is a schematic diagram of a unit cell membrane of an infrared absorption thermal battery, wherein J1 in FIG. 1 is a metal thin film layer 1; mp is a P-type semiconductor thin film layer; mn is an n-type semiconductor thin film layer; j2 is a metal film layer 2; jx + is a positive electrode plate; jx-is the positive electrode sheet.
FIG. 2 is a schematic structure diagram of a thermal battery diaphragm (Hd) with multiple thin film layers stacked, wherein J1 in FIG. 2 is a metal thin film layer 1; mp is a p-type semiconductor thin film layer; mn is an n-type semiconductor thin film layer; j2 is a metal film layer 2; jx + is a positive electrode plate; jx-is a positive electrode plate; .., an ellipsis, indicates that the number of thermal battery cells is several x groups, x is an integer, and the value of x is selected according to the voltage of the thermal battery.
FIG. 3 is a schematic view of an infrared absorption thermal battery with its micropores omitted; in FIG. 3, hd is a film, a sheet or a plate formed by stacking multiple sets of thin film layers shown in FIG. 2; jx + is a positive connecting piece; jx-is a negative connecting piece; lx is an interconnect line; MB is an insulation coating sealing layer.
FIG. 4 is an illustration of an overall structure of an infrared absorption thermal battery, and Hd in FIG. 4 is a film, sheet or plate made by stacking a plurality of thin film layers shown in FIG. 2; jx + is a positive connecting piece; jx-is a negative connecting piece; lx is an interconnect line; mb is an insulating coating sealing layer; mk is a fastening micro-hole.
Example of the implementation
Example 1 an infrared absorption thermal battery, referred to as infrared thermal battery or thermal battery for short, having a basic unit thermal battery diaphragm principle structure as shown in fig. 1; the principle structure of the thermal battery diaphragm (Hd) is shown in figure 2; the outer coating integral structure is as shown in figure 4; the film is characterized by consisting of a thermal battery film (Hd) formed by overlapping a plurality of conductive film layers, an insulating outer packaging layer (MB)), fastening Micropores (MK), a positive electrode lug plate Jx +, a negative electrode lug plate Jx' and an internal connection wire (LX); the structural relationship is: the thermal battery diaphragm (Hd) is formed by superposing X groups on a basic unit thermal battery thin film group formed by superposing a metal thin film layer 1 (J1), a p-type semiconductor material thin film layer (Mp), an n-type semiconductor material thin film layer (Mn) and a metal thin film layer 2 (J2); the metal thin film layer 1 (J1), the p-type semiconductor material thin film layer (Mp), the n-type semiconductor material thin film layer (Mn) and the metal thin film layer 2 (J2) of the basic unit thermal battery thin film group are fastened and superposed by a coating or a cladding to form a basic unit thermal battery diaphragm, and the basic unit thermal battery diaphragm (thin film group) is fastened and superposed by a plurality of X pieces (groups) to form a thermal battery diaphragm (Hd); countless fastening Micropores (MK) are punched on the thermal battery diaphragm (Hd), the thermal battery diaphragm (Hd) is coated with the insulating outer packaging layer (MB), and the fastening Micropores (MK) are filled with the insulating outer packaging layer material; the positive electrode lug Jx + and the negative electrode lug Jx-are respectively stuck and embedded on the outer surface of the insulating outer packaging layer (MB), and are respectively connected with two electrode thin film layers of the thermal battery diaphragm (Hd) through an internal connection wire (LX); the superposition number X of the basic unit thermal cell (group) of the thermal cell diaphragm (Hd) is selected according to the voltage grade, and X is an integer of 1, 2 and 3 … X.
According to the requirements of output voltage, the superposition number of the unit thermal batteries is selected, the voltage of the unit thermal batteries is greatly changed according to different material elements of J1, MP, MN and J2 film layers, the voltage is about 0.3-0.5V, the voltage is about 1-4V, and the J1 and J2 metal film layers are selected from different metal material combinations and different semiconductor material combinations.
The thermal battery diaphragm (Hd) planar placement application is a planar thin film application thermal battery; in order to increase the surface absorption area of the film, the thermal battery diaphragm (Hd) is wound for multiple circles to form a multi-circle winding type thermal battery; the basic unit thermal battery diaphragm is coiled and then connected in series, and higher voltage can be obtained.
Example 2 a planar membrane plate thermal battery with fastened micro-holes was omitted. The principle of the basic unit thermal battery diaphragm is shown in the attached figure 1; the principle structure of the thermal battery diaphragm (Hd) is shown in figure 2; the outer coating integral structure is as shown in figure 3;
the infrared absorption thermal battery without the fastening micropores is characterized in that each film layer is overlapped by adopting compact coating layers, the adhesion is high, the fastening Micropores (MK) and the micropore fastening filling materials of the infrared absorption thermal battery in the example 1 are omitted, and other structures are similar to those of the infrared absorption thermal battery in the example 1; the heat battery comprises a thermal battery diaphragm (Hd), an insulating outer packaging layer (MB)), fastening Micropores (MK), a positive electrode lug plate Jx +, a negative electrode lug plate Jx-and an internal connection wire (LX); the structural relationship is: the thermal battery diaphragm (Hd) is formed by overlapping X groups on a basic unit thermal battery diaphragm group formed by overlapping film coating layers of a metal film layer 1 (J1), a p-type semiconductor material film layer (Mp), an n-type semiconductor material film layer (Mn) and a metal film layer 2 (J2), and an insulating outer packaging layer (MB) wraps the thermal battery diaphragm (Hd); the positive electrode lug Jx + and the negative electrode lug Jx-are respectively stuck and embedded on the outer surface of the insulating outer packaging layer (MB), and are respectively connected with two electrode thin film layers of a thermal battery diaphragm (Hd) through an internal connection wire (LX); the number X of the overlapped membranes of the basic unit thermal battery is selected according to the voltage grade of the thermal battery, and when X is 1, the basic unit thermal battery without fastening micropores is formed.
Example 3 a multi-turn wound infrared absorption thermal battery having a basic unit thermal battery membrane principle structure as shown in fig. 1; the principle structure of the thermal battery diaphragm (Hd) is shown in figure 2; the outer cladding integral structure is as shown in figure 3 or figure 4; in order to increase the infrared absorption area, the multilayer superposed battery membrane plates (Hd) are wound for a plurality of circles, the surface area of the thin film is increased, and larger power is generated; the structural form is that the thermal battery diaphragm (Hd) is coiled into a cylindrical or elliptic cylindrical or flat cylindrical form after being fastened by an insulating outer coating film and micropores.
Advantageous effects
The invention can generate voltage and current with small density, although the power density of the prior trial production is small, the current can be generated within 24 hours, and the electric energy can be discharged with large current when being charged and stored for power consumption, thereby meeting the requirement that mobile electric appliances such as led hand lamps, shavers, mobile phones and the like use large current occasionally, reducing the trouble of charging small electric appliances for daily use and bringing convenience to daily life.
Claims (6)
1. The infrared absorption thermal battery has the advantages that the current photovoltaic battery is excited by visible light to generate current, no visible light is generated at night, the thermoelectric generation piece can generate current only by temperature difference, and the efficiency is low; the invention relates to a thermal battery for generating current by utilizing space infrared thermal radiation energy, which is called thermal battery for short and is characterized by consisting of a thermal battery diaphragm (Hd) formed by superposing a plurality of conductive film layers, an insulating outer packaging layer (MB)), fastening Micropores (MK), a positive electrode lug JC +, a negative electrode lug JC-and an internal connecting wire (LX); the structural relationship is: the thermal battery diaphragm (Hd) is formed by overlapping a basic unit thermal battery thin film group consisting of a metal thin film layer 1 (J1), a p-type semiconductor material thin film layer (Mp), an n-type semiconductor material thin film layer (Mn) and a metal thin film layer 2 (J2) with an X group, wherein the J1, mp, mn and J2 of the basic unit thermal battery thin film group are fastened and overlapped by a coating or a cladding to form a basic unit thermal battery diaphragm, and the basic unit thermal battery diaphragm (thin film group) is fastened and overlapped by a plurality of X pieces (groups) to form the thermal battery diaphragm (Hd); countless fastening Micropores (MK) are punched on the thermal battery diaphragm (Hd), the thermal battery diaphragm (Hd) is coated by the insulating outer packaging layer (MB), and the fastening Micropores (MK) are filled with the insulating outer packaging layer material; the positive electrode lug Jx + and the negative electrode lug Jx-are respectively stuck and embedded on the outer surface of the insulating outer packaging layer (MB), and are respectively connected with two electrode thin film layers of the thermal battery diaphragm (Hd) through an internal connection wire (LX); the superposition number X of a basic unit thermal battery sheet (group) of the thermal battery sheet (Hd) is selected according to the voltage grade, and when the X is 1, the basic unit thermal battery is formed; the infrared absorption thermal battery without fastening micropores is formed by omitting the fastening micropores (Mk) when the compactness and the adhesion of the laminated layers are high; the thermal battery diaphragm (Hd) is placed and applied in a plane to form a plane thin film application type thermal battery; the thermal battery diaphragm (Hd) is wound for a plurality of turns to form a multi-turn wound thermal battery.
2. The infrared absorption heat battery as claimed in claim 1, wherein the basic unit heat battery diaphragm is composed of a metal thin film layer 1 (J1), a p-type semiconductor material thin film layer (Mp), an n-type semiconductor material thin film layer (Mn), and a metal thin film layer 2 (J2), and the structural relationship is formed by fastening and stacking the J1, mp, mn, and J2 thin film layers in sequence; namely, the unit cell thermal battery film group is formed by tightly overlapping the film layers of the unit cell thermal battery film group.
3. The infrared absorbing thermal battery according to claim 1 or 2, wherein said thermal battery diaphragm (Hd) is formed by stacking a plurality of X sheets (groups) of elementary cell thermal battery diaphragms (groups) in a structural relationship: a plurality of thin film layers are sequentially overlapped according to J1, mp, mn, J2, a plurality of layers, J1, mp, mn and J2, a plurality of groups of thin film layers are overlapped by coating films or coating films to form a thermal battery diaphragm (Hd), a plurality of fastening Micropores (MK) are punched on the thermal battery diaphragm (Hd), insulating hot melt materials are filled in the fastening Micropores (MK), and the thin film layers are fastened by hot pressing; and selecting the superposition number X of the film group of the basic unit thermal battery according to the voltage grade of the thermal battery, wherein the application voltage is X times of the voltage of the diaphragm of the basic unit thermal battery.
4. The infrared absorbing thermal battery according to claim 1 or 2, wherein the elementary cell thermal battery is a elementary cell thermal battery constituted by the infrared absorbing thermal battery according to claim 1 or 2 when the X value is 1; the same structural relationship as that of the infrared absorption thermal battery according to claims 1 and 2.
5. The infrared absorption thermal battery according to claim 1 or 3, wherein the infrared absorption thermal battery without the fastening micropores is characterized in that the thin film layers are densely stacked by using plated layers, the fastening Micropores (MK) and the fastening micropore filling material according to claim 1 or 3 are omitted, and other structural relationships are similar to those of the infrared absorption thermal battery according to claim 1 or 3; the heat battery comprises a thermal battery diaphragm (Hd), an insulating outer packaging layer (MB)), fastening Micropores (MK), a positive electrode lug plate Jx +, a negative electrode lug plate Jx-and an internal connection wire (LX); the structural relationship is: the thermal battery diaphragm (Hd) is formed by overlapping X groups of basic unit thermal battery diaphragm groups formed by overlapping a metal thin film layer 1 (J1), a p-type semiconductor material thin film layer (Mp), an n-type semiconductor material thin film layer (Mn) and a metal thin film layer 2 (J2) by coating layers, and the thermal battery diaphragm (Hd) is coated by an insulating outer packaging layer (MB); the positive electrode lug Jx + and the negative electrode lug Jx-are respectively pasted and embedded on the outer surface of the insulating outer packaging layer (MB), and are respectively connected with two electrode thin film layers of a thermal battery diaphragm (Hd) through an internal connection wire (LX); the number X of the stacked basic unit thermal battery diaphragms is selected according to the voltage grade of the thermal battery, and when X is 1, the basic unit thermal battery without fastening micropores is formed.
6. The infrared absorption thermal battery as claimed in claim 1, 2, 3, 4 or 5, wherein said multi-turn coiled thermal battery is characterized in that a thermal battery film (Hd) formed by stacking a plurality of films is wound into a cylindrical or elliptic cylindrical or flat cylindrical form after being fastened with an insulating outer coating film and micro-holes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111146828.4A CN115939248A (en) | 2021-09-22 | 2021-09-22 | Infrared absorption thermal battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111146828.4A CN115939248A (en) | 2021-09-22 | 2021-09-22 | Infrared absorption thermal battery |
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| Publication Number | Publication Date |
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| CN115939248A true CN115939248A (en) | 2023-04-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111146828.4A Pending CN115939248A (en) | 2021-09-22 | 2021-09-22 | Infrared absorption thermal battery |
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| CN (1) | CN115939248A (en) |
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2021
- 2021-09-22 CN CN202111146828.4A patent/CN115939248A/en active Pending
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