CN211428190U - Film coating device - Google Patents

Film coating device Download PDF

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Publication number
CN211428190U
CN211428190U CN201921822176.XU CN201921822176U CN211428190U CN 211428190 U CN211428190 U CN 211428190U CN 201921822176 U CN201921822176 U CN 201921822176U CN 211428190 U CN211428190 U CN 211428190U
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China
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light
anode plate
conductive film
cathode plate
chamber
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CN201921822176.XU
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Chinese (zh)
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胡广豹
王秀鹏
彭吉贤
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Tongwei Solar Jintang Co Ltd
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Chengdu Yefan Science and Technology Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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Abstract

The utility model relates to a coating device. The film coating device is used for manufacturing a light-transmitting conductive film of the heterojunction solar cell and comprises a shell, an anode plate, a cathode plate and a radio frequency power generator. The shell is internally provided with a hollow chamber which can be vacuumized; an anode plate and a cathode plate are arranged in the chamber, and a space is arranged between the anode plate and the cathode plate so that a target material for manufacturing the light-transmitting conductive film can be accommodated at the space; the radio frequency power generator is disposed outside the housing and electrically connected to the anode plate and the cathode plate, and the radio frequency power generator is configured to be able to supply direct current and alternating current to the anode plate and the cathode plate. According to the utility model discloses, when making the printing opacity conducting film, provide reverse acceleration to electric thick liquid through applying alternating current electric field after the electric thick liquid that generates high concentration with the direct current to reduce the energy of printing opacity conducting film, avoid the injury to amorphous silicon layer when the printing opacity conducting film is applied to amorphous silicon layer.

Description

Film coating device
Technical Field
The utility model relates to an energy field especially relates to a coating device.
Background
With the increasing consumption of conventional fossil energy such as global coal, oil, natural gas and the like, the ecological environment is continuously deteriorated, and particularly, the sustainable development of the human society is seriously threatened due to the increasingly severe global climate change caused by the emission of greenhouse gases. Various countries in the world make respective energy development strategies to deal with the limitation of conventional fossil energy resources and the environmental problems caused by development and utilization. Solar energy has become one of the most important renewable energy sources by virtue of the characteristics of reliability, safety, universality, long service life, environmental protection and resource sufficiency, and is expected to become a main pillar of global power supply in the future.
In a new energy revolution process, the photovoltaic industry in China has grown into a strategic emerging industry with international competitive advantages. However, the development of the photovoltaic industry still faces many problems and challenges, and the conversion efficiency and reliability are the biggest technical obstacles restricting the development of the photovoltaic industry, while the cost control and the scale-up are economically restricted.
At present, the heterojunction solar cell has a series of advantages of high conversion efficiency, short manufacturing process flow, thin silicon wafer, low temperature coefficient, no light attenuation, double-sided power generation, high double-sided efficiency and the like, and is praised as the next generation ultra-high efficiency solar cell technology with the best industrialization potential. However, the heterojunction solar cell technology has certain difficulty in realizing large-scale development: on one hand, the manufacturing cost of the heterojunction solar cell is relatively high, and on the other hand, when the heterojunction solar cell is packaged by adopting a conventional packaging technology, the stability of the tensile force of a welding strip is difficult to control, and the heterojunction solar cell cannot adopt the processes of high-temperature welding and the like of the traditional crystalline silicon cell, needs a low-temperature welding process and a low-temperature material, so that the packaging process difficulty is high.
The shingled assembly utilizes the electrical principle of low current and low loss (the power loss of the photovoltaic assembly is in a direct proportional relation with the square of the working current) so as to greatly reduce the power loss of the assembly. And secondly, the inter-cell distance region in the cell module is fully utilized to generate electricity, so that the energy density in unit area is high. In addition, the conventional photovoltaic metal welding strip for the assembly is replaced by the conductive adhesive with the elastomer characteristic at present, the photovoltaic metal welding strip shows higher series resistance in the whole battery, and the stroke of a current loop of the conductive adhesive is far smaller than that of a welding strip, so that the laminated assembly becomes a high-efficiency assembly, and meanwhile, the outdoor application reliability is more excellent than that of the conventional photovoltaic assembly, and the laminated assembly avoids stress damage of the metal welding strip to the interconnection position of the battery and other confluence areas. Especially, under the dynamic (load action of natural world such as wind, snow and the like) environment with alternating high and low temperatures, the failure probability of the conventional assembly which is interconnected and packaged by adopting the metal welding strips is far higher than that of the laminated assembly which is interconnected and cut by adopting the conductive adhesive of the elastomer and packaged by the battery chips.
The mainstream technology of the current tile stack assembly is to use a conductive adhesive to interconnect the cut battery pieces, wherein the conductive adhesive mainly comprises a conductive phase and a bonding phase. The conductive phase mainly comprises precious metals, such as pure silver particles or particles of silver-coated copper, silver-coated nickel, silver-coated glass and the like, and is used for conducting electricity among solar cells, the particle shape and distribution of the conductive phase are based on the requirement of optimal electricity conduction, and at present, more sheet-shaped or sphere-like combined silver powder with D50 being less than 10um is adopted. The adhesive phase is mainly composed of a high molecular resin polymer having weather resistance, and acrylic resin, silicone resin, epoxy resin, polyurethane, and the like are usually selected in accordance with the adhesive strength and weather resistance. In order to enable the conductive adhesive to achieve low contact resistance, low volume resistivity and high adhesion and maintain long-term excellent weather resistance, a conductive adhesive manufacturer can generally complete the design of a conductive phase and an adhesive phase formula, so that the performance stability of the laminated tile assembly under an initial stage environment corrosion test and long-term outdoor practical application is ensured.
If the heterojunction solar cell is packaged by adopting the tiling technology, the problems are solved. The tiling technology adopts the mode that the conductive adhesive is connected with the battery pieces in series, the low-temperature and flexible characteristics of the conductive adhesive and the design of no welding strip can solve the problems of the tension stability and the low-temperature welding of the welding strip. In addition, the heterojunction solar cell technology can adopt thinner silicon wafers, and when the traditional assembly packaging process is adopted, the difficulty of connecting the welding strips in series with the cell pieces is high, and the heterojunction solar cell is influenced by mechanical stress and thermal stress, so that the heterojunction solar cell is easy to break. The laminated assembly is connected with the battery pieces without welding strips, so that the breakage rate in the packaging process can be reduced.
In addition to the above problems, other problems exist with heterojunction solar cells. The conventional heterojunction solar cell generally includes an amorphous silicon layer and a light-transmitting conductive film which are stacked, but when the light-transmitting conductive film is applied to the amorphous silicon layer, the light-transmitting conductive film with high energy generally causes damage to the amorphous silicon layer. Specifically, in the fabrication of transparent conductive films, direct current is typically applied to the substrate to generate a high energy, high concentration plasma, which is then deposited on the intrinsic amorphous silicon layer and then the amorphous silicon layer is subjected to significant energy, and thus the "bombarding" damage to the amorphous silicon layer, which is irreversible, is applied to the amorphous silicon layer. Therefore, the physical characteristics of the amorphous silicon layer of the manufactured heterojunction solar cell can be damaged to a certain extent, and the overall performance of the heterojunction solar cell is affected.
It is therefore desirable to provide a coating device that at least partially addresses the above problems.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a coating device for when making the printing opacity conducting film, provide reverse acceleration to electric thick liquid through applying alternating current electric field after the electric thick liquid that generates high concentration with the direct current, thereby reduce the energy of printing opacity conducting film, avoid the injury to amorphous silicon layer when the amorphous silicon layer is applied to the printing opacity conducting film.
According to an aspect of the utility model, a coating device is provided, coating device is used for making the printing opacity conducting film of heterojunction solar wafer, coating device includes:
a housing having a hollow chamber therein, the housing being provided with a gas inlet and a gas outlet communicating the chamber with the outside, and being configured such that the chamber can be evacuated;
an anode plate and a cathode plate which are disposed within the chamber with a space therebetween so that a target for manufacturing the light-transmitting conductive film can be accommodated at the space;
a radio frequency power generator disposed outside the housing and electrically connected to the anode plate and the cathode plate, and configured to supply direct current and alternating current to the anode plate and the cathode plate.
In one embodiment, the anode plate and the cathode plate are parallel to and face each other.
In one embodiment, the housing is made of a non-metallic material.
In one embodiment, the coating apparatus further comprises a gas inlet device configured to be communicable with the gas inlet of the housing to discharge argon dioxide to the chamber; and/or
The coating apparatus also includes a gas evacuation device configured to be communicable with the gas outlet of the housing to pump out gas within the cavity.
According to the utility model discloses, when making the printing opacity conducting film, provide reverse acceleration to electric thick liquid through applying alternating current electric field after the electric thick liquid that generates high concentration with the direct current to reduce the energy of printing opacity conducting film, avoid the injury to amorphous silicon layer when the printing opacity conducting film is applied to amorphous silicon layer. And use the utility model provides a coating film device or manufacturing method can process the printing opacity conducting film that has different light transmissivity, makes the printing opacity conducting area of heterojunction solar wafer have the transmittance of gradual change, can improve aspects such as the carrier excursion rate of heterojunction solar wafer, light transmissivity and electric conductivity like this, avoids filling factor to hang down, the emergence of the lower problem of the electric current that opens circuit, makes heterojunction solar wafer have higher photoelectric conversion rate.
Drawings
For a better understanding of the above and other objects, features, advantages and functions of the present invention, reference should be made to the preferred embodiments illustrated in the accompanying drawings. Like reference numerals in the drawings refer to like parts. It will be appreciated by persons skilled in the art that the drawings are intended to illustrate preferred embodiments of the invention without any limiting effect on the scope of the invention, and that the various components in the drawings are not to scale.
FIG. 1 is a schematic view of a coating apparatus according to a preferred embodiment of the present invention;
fig. 2 is a heterojunction solar cell monolith processed by using the coating apparatus of fig. 1.
Detailed Description
Referring now to the drawings, specific embodiments of the present invention will be described in detail. What has been described herein is merely a preferred embodiment in accordance with the present invention, and those skilled in the art will appreciate that other ways of implementing the present invention on the basis of the preferred embodiment will also fall within the scope of the present invention.
The utility model provides a film coating device. Fig. 1 shows a schematic view of a coating device 1 according to a preferred embodiment of the present invention.
The coating device 1 is used for producing heterojunction solar cells with a light-transmitting conductive film, which comprise an amorphous silicon layer, which may for example in turn comprise a substrate layer and an intrinsic amorphous silicon layer, on which the light-transmitting conductive film is laminated. The intrinsic amorphous silicon layer has the functions of passivating the surface of the silicon wafer, reducing the density of interface states, prolonging the service life of the heterojunction solar cell and improving the open-circuit voltage of the heterojunction solar cell.
And the plating device 1 is specifically for manufacturing a light-transmitting conductive film. Referring to fig. 1, a coating device 1 roughly includes a case 2, an anode plate 6, a cathode plate 7, and a radio frequency power generator 5 electrically connected to the two electrode plates.
Specifically, the housing 2 has a hollow chamber, a gas inlet 3 and a gas outlet 4 that communicate the chamber with the outside are provided on the housing 2, and the housing 2 has a rigidity large enough to enable the chamber inside the housing 2 to be evacuated. The housing 2 is preferably made of a non-metallic material, and in order to further prevent the housing 2 from being charged, a grounding device may be further installed on the housing 2.
The anode plate 6 and the cathode plate 7 are two electrode plates which are matched for use. The anode plate 6 and the cathode plate 7 are fixedly installed in the chamber of the case 2 with a space between the anode plate 6 and the cathode plate 7, which can fittingly receive a target 8 for manufacturing a light-transmitting conductive film. Preferably, the anode plate 6 and the cathode plate 7 are parallel to and completely face each other, and such an arrangement enables an electric field to be sufficiently formed between the anode plate 6 and the cathode plate 7, thereby improving the processing efficiency.
The radio frequency power generator 5 is disposed outside the case 2 and electrically connected to the anode plate 6 and the cathode plate 7, and is configured to be able to supply a direct current and an alternating current to both electrode plates.
Preferably, the coating device 1 of the present embodiment may further include an air intake device and an air exhaust device. A gas inlet device can communicate with the gas inlet 3 to discharge argon dioxide into the chamber and a gas outlet device can communicate with the gas outlet 4 to pump gas out of the chamber. Of course, the coating device 1 may not include an air inlet device and an air exhaust device, and the air inlet device and the air exhaust device may be independent of the coating device 1 and used in combination with the coating device 1.
The present embodiment also provides a method for manufacturing a heterojunction solar cell, in which the coating device 1 as shown in fig. 1 is to be used. Specifically, the method for manufacturing the heterojunction solar cell comprises a step of manufacturing a heterojunction solar cell integral sheet and a step of splitting the heterojunction solar cell integral sheet into a plurality of heterojunction solar cell sheets. The step of manufacturing the heterojunction solar cell monolithic piece comprises the following steps:
mounting a target between an anode plate and a cathode plate in a cavity of the film coating device 1;
controlling a radio frequency power supply generator to supply direct current to the anode plate and the cathode plate, accelerating electrons to impact gas under the action of a direct current electric field and generating plasma, wherein the plasma is on the target material through a physical gas phase;
controlling the radio frequency power supply generator to supply alternating current to the anode plate and the cathode plate so as to reduce the deposition speed of the plasma on the target material;
peeling off the target material with the plasma adhered thereon from the main body of the target material to obtain a light-transmitting conductive film;
laminating a light-transmitting conductive film on the amorphous silicon layer to obtain a base sheet;
electrodes are applied to the top and bottom surfaces of the base sheet.
In general, the light-transmitting conductive films are provided on both the top side and the bottom side of the amorphous silicon layer, and the light-transmitting conductive films provided on both the top side and the bottom side of the amorphous silicon layer can be processed and manufactured by the plating device 1 shown in fig. 1. For example, the light-transmitting conductive film provided on the top side of the amorphous silicon layer can be processed when the plating device 1 is in the state shown in fig. 1, and the light-transmitting conductive film provided on the bottom side of the amorphous silicon layer can be processed after the plating device 1 is turned upside down.
Preferably, in order to make the light-transmitting conductive area of the substrate sheet have gradually changed light-transmitting property, a plurality of light-transmitting conductive films with different light-transmitting properties can be manufactured, and the process can also be realized by the coating device 1. In this case, the step of fabricating the heterojunction solar cell monolithic piece comprises:
selecting a plurality of different target materials;
repeating the steps of manufacturing the transparent conductive film for multiple times, wherein different targets and different direct-current voltages are used in each step to obtain multiple transparent conductive films with different transmittances;
and arranging the light-transmitting conductive films on the amorphous silicon layer in a laminating manner in a manner of increasing the light transmittance from the amorphous silicon layer, thereby obtaining the substrate sheet.
In this way, the light-transmitting conductive films are arranged on the top side and the bottom side of the amorphous silicon layer in the order of the strength of the light-transmitting property, so that the light-transmitting property of each light-transmitting conductive film increases progressively in the direction from the amorphous silicon layer to the electrode.
Referring to the processed heterojunction solar cell as shown in fig. 2, taking the transparent conductive films on the top side of the amorphous silicon layer as an example, the transparent conductive film directly contacting the amorphous silicon layer is referred to as a first transparent conductive film, the transparent conductive film directly on the top side of the first transparent conductive film is referred to as a second transparent conductive film, and so on, and the transparent conductive film on the top is, for example, an nth transparent conductive film. The positive electrode of the heterojunction solar cell is applied on the top surface of the nth light-transmitting conductive film. The light transmittance of each light-transmitting conductive film increases in the direction from the amorphous silicon layer to the positive electrode, i.e., from the first light-transmitting conductive film to the nth light-transmitting conductive film. That is, the light transmittance of the first light-transmitting conductive film is the worst, the light transmittance of the second light-transmitting conductive film is stronger than that of the first light-transmitting conductive film, the light transmittance of the third light-transmitting conductive film is stronger than that of the second light-transmitting conductive film … …, the light transmittance of the nth light-transmitting conductive film is stronger than that of the nth-1 light-transmitting conductive film, and the light transmittance of the nth light-transmitting conductive film is the strongest.
The transparent conductive film on the bottom side of the amorphous silicon layer is similar. The first light-transmitting conductive film and the second light-transmitting conductive film … … are also arranged in this order in the direction from the amorphous silicon layer to the back electrode, and the light transmittances of the first light-transmitting conductive film to the nth light-transmitting conductive film are gradually increased.
Of course, since the light transmittance and the electrical conductivity of the conductive material are sometimes inversely related, there is a possibility that the electrical conductivity of each light-transmitting conductive film tends to decrease in the direction from the amorphous silicon layer to the electrode. That is, the light-transmitting conductive films located at the topmost and bottommost portions of the base sheet may be slightly less conductive.
The present embodiments also provide a method of manufacturing a shingle assembly, comprising the steps of: manufacturing a heterojunction solar cell based on the method; and sequentially connecting a plurality of heterojunction solar cells in a tiling mode.
The utility model provides a manufacturing method of coating film device, heterojunction solar wafer and stack tile subassembly can make when making the printing opacity conducting film, provides reverse acceleration to electric thick liquid through applying alternating current electric field after the electric thick liquid that generates the high concentration with the direct current to reduce the energy of printing opacity conducting film, avoid when the printing opacity conducting film is applied amorphous silicon layer the injury, obtain the more excellent heterojunction solar wafer of physical characteristic and stack tile subassembly to amorphous silicon layer. And use the utility model provides a coating film device or manufacturing method can process the printing opacity conducting film that has different light transmissivity, makes the printing opacity conducting area of heterojunction solar wafer have the transmittance of gradual change, can improve aspects such as the carrier excursion rate of heterojunction solar wafer, light transmissivity and electric conductivity like this, avoids filling factor to hang down, the emergence of the lower problem of the electric current that opens circuit, makes heterojunction solar wafer have higher photoelectric conversion rate.
The foregoing description of various embodiments of the invention is provided to one of ordinary skill in the relevant art for the purpose of illustration. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. As noted above, various alternatives and modifications of the present invention will be apparent to those skilled in the art of the above teachings. Thus, while some alternative embodiments are specifically described, other embodiments will be apparent to, or relatively easily developed by, those of ordinary skill in the art. The present invention is intended to embrace all such alternatives, modifications and variances of the present invention described herein, as well as other embodiments that fall within the spirit and scope of the present invention as described above.
Description of reference numerals:
coating device 1
Case 2
Gas inlet 3
Gas outlet 4
Radio frequency power generator 5
Anode plate 6
Cathode plate 7
Target material 8

Claims (4)

1. A coating device (1) for producing a light-transmitting electrically conductive film of a heterojunction solar cell, characterized in that it comprises:
a housing (2) having a hollow chamber therein, provided with a gas inlet (3) and a gas outlet (4) communicating the chamber with the outside, and configured such that the chamber can be evacuated;
an anode plate (6) and a cathode plate (7) which are disposed within the chamber with a space therebetween so that a target (8) for manufacturing the light-transmitting conductive film can be accommodated at the space;
a radio frequency power generator (5) disposed outside the housing and electrically connected to the anode plate and the cathode plate, and configured to be able to supply direct current and alternating current to the anode plate and the cathode plate.
2. The plating device according to claim 1, wherein the anode plate and the cathode plate are parallel to and face each other.
3. The plating device according to claim 1, wherein the housing is made of a non-metallic material.
4. The plating device according to claim 1,
the coating apparatus further includes a gas inlet device configured to be communicable with the gas inlet of the housing to discharge argon dioxide to the chamber; and/or
The coating apparatus further includes a gas evacuation device configured to be communicable with the gas outlet of the housing to pump out gas within the chamber.
CN201921822176.XU 2019-10-28 2019-10-28 Film coating device Active CN211428190U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201921822176.XU CN211428190U (en) 2019-10-28 2019-10-28 Film coating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201921822176.XU CN211428190U (en) 2019-10-28 2019-10-28 Film coating device

Publications (1)

Publication Number Publication Date
CN211428190U true CN211428190U (en) 2020-09-04

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ID=72288654

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201921822176.XU Active CN211428190U (en) 2019-10-28 2019-10-28 Film coating device

Country Status (1)

Country Link
CN (1) CN211428190U (en)

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Effective date of registration: 20210604

Address after: 610404 No.1, east section of Jinle Road, huaikou Town, Jintang County, Chengdu City, Sichuan Province (in Jintang Industrial Park)

Patentee after: Tongwei solar energy (Jintang) Co.,Ltd.

Address before: No. 505, building 6, Zone D, Tianfu Software Park, No. 599, shijicheng South Road, high tech Zone, Chengdu, Sichuan 610041

Patentee before: CHENGDU YEFAN SCIENCE AND TECHNOLOGY Co.,Ltd.

TR01 Transfer of patent right