CN1158757C - 封装的表面声波部件及其制造方法 - Google Patents
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Abstract
本发明涉及一种新型封装的表面声波部件和这种部件的批量生产方法。该部件包括在基衬的表面上的表面声波器件。封装的该包裹还包括基衬,位于基衬上的第一层,该第一层至少在表面声波器件的有效表面的范围内局部成空心,覆盖整个第一层的印刷电路,和导电通孔,该通孔穿过由第一层/印刷电路形成的单元,以便使表面声波器件与外部电连接。
Description
技术领域
本发明涉及表面声波器件,特别是涉及被称为SAW(表面声波)滤波器的滤波器,它用于对频带进行高位选择滤波。这些部件是为便携式装置而设计例如无线电话,它们必须进行小型化设计和保护性包装。
背景技术
而且,由于声波在压电基衬的表面附近传播,该表面必须留下空缺,以便不干扰波的传播。对于封装包裹,这是一个附加的约束。
表面声波滤波器的该项封装技术基于由如图1所示的两部分形成的包裹:陶瓷的或有机的基底01和陶瓷的,金属的或有机的盖02,它们通过焊接或粘合进行封闭以提供部件的隔绝密封并与此同时形成必要的空腔。在这种类型的包装中,表面声波器件(或SAW器件)03通过粘合到基底上来装配。在SAW器件的内部触点011,012和外部触点071和072之间的电连接由穿过基底01的镀金属通孔来提供。
图1表示已有技术的一个例子,其中SAW器件与外部的电连接是导线型连接。为了更简洁,目前使用的技术是倒装法技术(其中的部件翻转)。图2表示与图1不同的已有技术的封装好的SAW器件的一个例子。
发明内容
为了满足大范围消费者市场的要求(无线电话,汽车,等),新的封装技术必须使滤波器不断地变小,与此同时降低其制造成本。对于其它部件,趋向于更大的包装密实度,以获得这样的部件/包装组件,其表面积等于芯片本身的表面积。
本发明提供的一种隔绝密封的空腔中的表面声波器件符合上述要求,该密封空腔在压电基衬本身上具有微盖,并且不增加其表面积。
特别是,本发明的一个目的是提供一种表而声波部件,它包括封装在一个包裹内的至少一个表面声波器件,所述器件通过互成角度配置的电极做在压电基衬的表面上,该电极由在基衬的表面内部的第一导电触点供电,除了基衬外,该包裹还包括:
-位于基衬上的第一层,该第一层至少在表面声波器件的有效表面的范围内局部成空心;
-覆盖整个第一层的印刷电路,所述印刷电路包括第二外部导电触点;
-导电通孔,该通孔穿过由第一层/印刷电路形成的单元,并使第一内部导电触点与第二外部导电触点连接;
其中,第一层与每个导电通孔和每个内部导电触点直接接触。
有利的是,第一层由树脂制成,在第一层内形成的通孔用来形成表面声波器件和由印刷电路构成的微盖之间的电连接,以提供部件转移区。
而且,有利的是,第一层的组分树脂可局部代替吸声沉积物。
组件的高度降低到印刷电路的厚度,印刷电路的厚度通常在25至100微米的范围内,第一层的厚度通常在几十微米和压电基衬的厚度(几百微米)的范围内。
本发明另一个目的是提供部件的制造的方法,它包括在压电基衬上制造表面声波器件,并包括下列步骤:
-在所有的表面声波器件上制造第一空心层;
-使印刷电路与所述第一空心层粘合;
-在表面声波器件的第一内部导电触点范围内,在印刷电路和第一空心层中制造通孔;
-给通孔镀金属,并确定第二外部导电触点,所述第二触点通过该镀金属的通孔与所述第一触点连接;
-切掉由基衬、第一空心层和印刷电路形成的单元,以便使各表面声波器件分开。
通过预先沉积一个均匀层然后蚀刻,或者通过层压一个预空心层或者再通过丝网印刷,可获得空心层。
有利的是,第一空心层可具有吸声性。
在制造表面声波器件时,本发明的方法的优点在于在压电基衬上实行集体制造法。这导致成本大幅度减少。而且,这种批量生产法与半导体通用的技术适应(使用掩模树脂,光刻法)。
附图说明
结合附图,通过对给定的非限定性的例子进行描述,本发明将更容易理解,其优点将更清楚,其中:
图1和2表示根据已有技术的封装的表面声波器件的视图;
图3表示封装的SAW器件组件;
图4a-4g表示根据本发明的封装的SAW器件的集体制造法的主要步骤。
具体实施方式
通常,表面声波器件可以是一个换能器,一个谐振器包括至少一个阵列和一个换能器。在任何情况下,它是通过在压电基衬的表面上沉积电极来获得。为了能够传播表面声波,它设法在对应于部件的有效表面的电极的上方形成未占用空腔。当它高度密实时,本发明的部件用来保持空腔处于如图3所示的未占用状态。压电基衬13在其未表示的表面上具有电极。这些电极在被称为有效表面14的表面范围内。有效表面通过第一层11与外部隔绝,该第一层位于压电基衬上。印刷电路12在上表面上提供紧密密封。在所示的图中,具有两个内部电源触点111和112的换能器可通过外部上触点171和172和穿过印刷电路以及第一层的导电通孔与外部连接。在必须提供多于两个的电源的较复杂的部件的情况下,通孔和触点的数量可适当的调节。有效表面声波器件14可考虑封装在由下列元件确定的外包装内:压电基衬,第一层11和印刷电路12。
下面更详细的说明用来获得本发明的部件的典型的集体制造法的步骤。
印刷电路
可使用镀铜的层压印刷电路,该印刷电路用聚酰亚胺树脂或基于无纺芳族聚酰胺纤维的环氧树脂浸渍。镀金属表面用来随后确定通孔。印刷电路的材质,即有机纤维使材料加强,以便使平面内高尺寸稳定性和低热膨胀系数与低介电常数和低表面粗糙度结合。最后,芳族聚酰胺纤维适合于小尺寸孔的钻孔和镀金属。
最好,在与镀金属表面相对的表面上,印刷电路具有可能预粘合的第二层隔绝粘合材料。图4a表示用于本发明的印刷电路的三个组元层,即金属层120,印刷电路12和粘合层121。
在SAW器件的有效表面上制造空腔
第一层11的感光环氧树脂型组分树脂通过在压电基衬上旋涂来沉积。在退火操作之后,树脂形成光影象,然后进行第二次退火操作。在显影后,基衬和树脂放进一个炉内。图4b表示包括SAW器件的压电基衬13,该SAW器件的有效表面14去掉树脂11。特别是在SAW器件111和112的内部导电触点上保留树脂。为了容易表示,只表示了两个SAW器件,但压电基衬具有一整套这些器件。
印刷电路粘合在层11上
特别是,这是将图4a示意性表示的电路压到图4b示意性表示的局部包括树脂的基衬上的步骤。两个元件例如在高压灭菌器内加热压合。通常,热循环适合释放使用的材料的应力并防止热冲击。
制造连接***
蚀刻导电层120以形成通孔。
在通常由铜制成的该层的表面处理(即去油污和显微侵蚀)以增加铜的表面粗糙度及其粘合性后,通过旋涂,感光树脂沉积在镀铜层120上。树脂用光晒器相对于通孔垂直曝晒。曝晒时间是树脂厚度的函数。未经树脂保护的铜例如溶解在氨水溶液中。然后,树脂例如用丙酮和乙醇去掉。这样,掩模限定在层120内(图4c)。
通过铜掩模烧蚀由印刷电路、粘合层和树脂形成的组件
穿过组件的通孔可例如用激态原子或CO2激光形成,然后例如用氧等离子体通过RIE(活性离子蚀刻)来封端。图4d中示出了通孔。
基衬和通孔(vias)的表面镀金属
在通孔烧蚀后,如果有必要可蚀刻铜掩模。然后,通过例如溅射给电路镀金属。几微米厚的一层铬和铜122先后均匀分布在印刷电路的表面和孔内侧。在这方面进行的循环使用溅射,并通常如下所示:
-氩等离于体操作以便如果需要机械地蚀刻天然氧化铝的细层;
-溅射铬:铬层起阻隔层的作用;
-溅射铜。
然后,可实施添加电解铜以增加镀金属的厚度至几十微米,这样增加通孔的热机械稳定性(图4e)。
制造外部导电触点
感光树脂沉积在整个导电表面上(基衬+通孔)。树脂相对于外部触点用光晒器垂直曝晒,以便使树脂保留在围绕着通孔的外部导电触点上,该外部导电触点还被称为“垫”,且树脂本身与通孔的壁的形状配合(在阳离子树脂的情况下)。
使不受树脂保护的铜化学蚀刻。然后,例如用丙酮和乙醇去掉树脂。
这样,所有的封装的部件成批获得图4f所示的外部连接触点。
切成单独的部件。
然后,部件用机械切开。还有可能沉积图4g所示的第三层18,该第三层18使具有适当的电介质性能的装置隔绝密封。通过金属溅射,薄层的导电材料或介电材料的沉积,对沉积层涂漆或者通过树脂浇铸或再通过聚对二甲苯型聚合物的汽相淀积可获得该层。这些方法的价值在于可这样覆盖基衬的下表面和预制部件的侧面。
这种保护可用作机械保护,掩模的基底,电磁屏蔽和/或与环境的隔绝密封型保护。
Claims (14)
1.一种表面声波部件,它包括至少一个封装在一个包裹内的表面声波器件,所述器件通过互成角度配置的电极做在压电基衬的表面上,该电极由在基衬的表面内部的第一导电触点供电,除了基衬外,该包裹还包括:
-位于基衬上的第一层,该第一层至少在表面声波器件的有效表面的范围内局部成空心;
-覆盖整个第一层的印刷电路,所述印刷电路包括第二外部导电触点;
-导电通孔,该通孔穿过由第一层/印刷电路形成的单元,并使第一内部导电触点与第二外部导电触点连接;
其中,第一层与每个导电通孔和每个内部导电触点直接接触。
2.如权利要求1所述的表面声波部件,其特征在于,第一层由感光树脂制成。
3.如权利要求1所述的表面声波部件,其特征在于,所述包裹具有一个第二层,称为粘合层,该粘合层位于第一层和印刷电路之间。
4.如权利要求1或2所述的表面声波部件,其特征在于,基衬的外表面和所述部件的侧表面上覆盖有第三层,即密闭层。
5.如权利要求1或2所述的表面声波部件,其特征在于,印刷电路在表面上镀有金属。
6.如权利要求1或2所述的表面声波部件,其特征在于,第一层具有吸声性。
7.一种制造表面声波部件的方法,包括在压电基衬上制造表面声波器件,并包括下列步骤:
-在所有的表面声波器件上制造第一空心层;
-使印刷电路与所述第一空心层粘合;
-在表面声波器件的第一内部导电触点范围内,在印刷电路和第一空心层中制造通孔;
-给通孔镀金属,并确定第二外部导电触点,所述第二触点通过该镀金属的通孔与所述第一触点连接;
-切掉由基衬、第一空心层和印刷电路形成的组件,以便使各表面声波器件分开。
8.如权利要求7所述的方法,其特征在于,通过预先沉积一个均匀层,然后蚀刻所述均匀层来获得第一空心层。
9.如权利要求7所述的方法,其特征在于,通过层压一个预先挖空的层来获得第一空心层。
10.如权利要求7至9中任一权利要求所述的方法,其特征在于,将印刷电路粘合到第一空心层上的步骤包括:
-在印刷电路上沉积被称为粘合层的第二层;
-在由第一空心层和压电基衬形成的整个单元上热压印刷电路/第二层。
11.如权利要求7至9中任一权利要求所述的方法,其特征在于,它包括在基衬的下表面上和部件的侧表面上形成被称为涂层的第三层。
12.如权利要求11所述的方法,其特征在于,第三层通过溅射形成。
13.如权利要求11所述的方法,其特征在于,第三层通过汽相淀积聚对二甲苯型聚合物形成。
14.如权利要求11所述的方法,其特征在于,第三层通过沉积一层漆形成。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR98/15478 | 1998-12-08 | ||
FR9815478A FR2786959B1 (fr) | 1998-12-08 | 1998-12-08 | Composant a ondes de surface encapsule et procede de fabrication collective |
Publications (2)
Publication Number | Publication Date |
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CN1290424A CN1290424A (zh) | 2001-04-04 |
CN1158757C true CN1158757C (zh) | 2004-07-21 |
Family
ID=9533716
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Application Number | Title | Priority Date | Filing Date |
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CNB998027774A Expired - Fee Related CN1158757C (zh) | 1998-12-08 | 1999-12-07 | 封装的表面声波部件及其制造方法 |
Country Status (10)
Country | Link |
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US (1) | US6852561B2 (zh) |
EP (1) | EP1053592B1 (zh) |
JP (1) | JP2002532934A (zh) |
KR (1) | KR20010040597A (zh) |
CN (1) | CN1158757C (zh) |
CA (1) | CA2320343A1 (zh) |
DE (1) | DE69920407T2 (zh) |
FR (1) | FR2786959B1 (zh) |
HK (1) | HK1036367A1 (zh) |
WO (1) | WO2000035085A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108666410A (zh) * | 2017-03-28 | 2018-10-16 | 天津威盛电子有限公司 | 表面声波晶片级封装及其所用的pcb的制造方法 |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2838578B1 (fr) * | 2002-04-12 | 2005-04-08 | Thales Sa | Dispositif d'interconnexion pour composants a ondes acoustiques d'interface |
DE10253163B4 (de) | 2002-11-14 | 2015-07-23 | Epcos Ag | Bauelement mit hermetischer Verkapselung und Waferscale Verfahren zur Herstellung |
JP4177182B2 (ja) * | 2003-06-13 | 2008-11-05 | 富士通メディアデバイス株式会社 | 弾性表面波デバイス、そのパッケージ及びその製造方法 |
US7230512B1 (en) * | 2003-08-19 | 2007-06-12 | Triquint, Inc. | Wafer-level surface acoustic wave filter package with temperature-compensating characteristics |
EP1687896B1 (en) * | 2003-11-14 | 2007-06-13 | Koninklijke Philips Electronics N.V. | Semiconductor device with a resonator |
KR100691160B1 (ko) * | 2005-05-06 | 2007-03-09 | 삼성전기주식회사 | 적층형 표면탄성파 패키지 및 그 제조방법 |
DE102005026243B4 (de) | 2005-06-07 | 2018-04-05 | Snaptrack, Inc. | Elektrisches Bauelement und Herstellungsverfahren |
US7807550B2 (en) * | 2005-06-17 | 2010-10-05 | Dalsa Semiconductor Inc. | Method of making MEMS wafers |
US8062930B1 (en) | 2005-08-08 | 2011-11-22 | Rf Micro Devices, Inc. | Sub-module conformal electromagnetic interference shield |
US8959762B2 (en) | 2005-08-08 | 2015-02-24 | Rf Micro Devices, Inc. | Method of manufacturing an electronic module |
US8053872B1 (en) | 2007-06-25 | 2011-11-08 | Rf Micro Devices, Inc. | Integrated shield for a no-lead semiconductor device package |
US20090002969A1 (en) | 2007-06-27 | 2009-01-01 | Rf Micro Devices, Inc. | Field barrier structures within a conformal shield |
CN100546180C (zh) * | 2005-08-24 | 2009-09-30 | 京瓷株式会社 | 表面声波装置及其制造方法 |
US20070048887A1 (en) * | 2005-08-26 | 2007-03-01 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy |
KR100653089B1 (ko) * | 2005-10-31 | 2006-12-04 | 삼성전자주식회사 | 탄성 표면파 디바이스 웨이퍼 레벨 패키지 및 그 패키징방법 |
GB2435544B (en) * | 2006-02-24 | 2008-11-19 | Oligon Ltd | Mems device |
JP5269301B2 (ja) * | 2006-07-21 | 2013-08-21 | 太陽誘電株式会社 | 弾性表面波装置 |
JP2009010559A (ja) | 2007-06-27 | 2009-01-15 | Nippon Dempa Kogyo Co Ltd | 圧電部品及びその製造方法 |
JP4468436B2 (ja) * | 2007-12-25 | 2010-05-26 | 富士通メディアデバイス株式会社 | 弾性波デバイスおよびその製造方法 |
WO2009096563A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 弾性波装置およびその製造方法 |
US8372674B2 (en) * | 2008-02-01 | 2013-02-12 | Honeywell International Inc. | Method for chemical sensor fabrication and related sensor |
US8101460B2 (en) * | 2008-06-04 | 2012-01-24 | Stats Chippac, Ltd. | Semiconductor device and method of shielding semiconductor die from inter-device interference |
TWI406382B (zh) * | 2010-03-09 | 2013-08-21 | Txc Corp | Welded - type vibrator device wafer - level package structure |
CN101820264B (zh) * | 2010-04-06 | 2012-06-06 | 台晶(宁波)电子有限公司 | 一种贯孔式振子装置晶圆级封装结构 |
CN101807898B (zh) * | 2010-04-06 | 2012-05-09 | 台晶(宁波)电子有限公司 | 一种振子装置三维晶圆级封装结构 |
US9137934B2 (en) | 2010-08-18 | 2015-09-15 | Rf Micro Devices, Inc. | Compartmentalized shielding of selected components |
US8835226B2 (en) | 2011-02-25 | 2014-09-16 | Rf Micro Devices, Inc. | Connection using conductive vias |
US9627230B2 (en) | 2011-02-28 | 2017-04-18 | Qorvo Us, Inc. | Methods of forming a microshield on standard QFN package |
WO2012132147A1 (ja) | 2011-03-28 | 2012-10-04 | 株式会社村田製作所 | 電子部品及びその製造方法 |
US9324659B2 (en) * | 2011-08-01 | 2016-04-26 | Stats Chippac, Ltd. | Semiconductor device and method of forming POP with stacked semiconductor die and bumps formed directly on the lower die |
US8866285B2 (en) * | 2012-09-05 | 2014-10-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fan-out package comprising bulk metal |
US9807890B2 (en) | 2013-05-31 | 2017-10-31 | Qorvo Us, Inc. | Electronic modules having grounded electromagnetic shields |
DE102014211558A1 (de) * | 2014-06-17 | 2015-12-17 | Robert Bosch Gmbh | Mikroelektromechanisches System und Verfahren zum Herstellen eines mikroelektromechanischen Systems |
KR102556333B1 (ko) * | 2015-12-18 | 2023-07-17 | (주)와이솔 | 표면 탄성파 웨이퍼 레벨 패키지 및 이를 위한 pcb 제작 방법 |
US20180269853A1 (en) * | 2017-03-14 | 2018-09-20 | Wisol Co., Ltd. | Surface acoustic wave wafer level package and method of manufacturing pcb for the same |
US11127689B2 (en) | 2018-06-01 | 2021-09-21 | Qorvo Us, Inc. | Segmented shielding using wirebonds |
US11219144B2 (en) | 2018-06-28 | 2022-01-04 | Qorvo Us, Inc. | Electromagnetic shields for sub-modules |
US11114363B2 (en) | 2018-12-20 | 2021-09-07 | Qorvo Us, Inc. | Electronic package arrangements and related methods |
CN109728790A (zh) * | 2019-01-16 | 2019-05-07 | 厦门云天半导体科技有限公司 | 一种滤波器的晶圆级封装结构及其工艺 |
US11515282B2 (en) | 2019-05-21 | 2022-11-29 | Qorvo Us, Inc. | Electromagnetic shields with bonding wires for sub-modules |
US11557491B2 (en) | 2019-10-31 | 2023-01-17 | Nxp B.V. | Selective underfill assembly and method therefor |
US11963291B2 (en) | 2022-04-21 | 2024-04-16 | Nxp B.V. | Efficient wave guide transition between package and PCB using solder wall |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2171850B (en) * | 1985-02-22 | 1988-05-18 | Racal Mesl Ltd | Mounting surface acoustic wave components |
JPS62109420A (ja) * | 1985-11-07 | 1987-05-20 | Alps Electric Co Ltd | 弾性表面波素子 |
DE3937870A1 (de) * | 1989-11-14 | 1991-05-16 | Siemens Ag | Mit gehaeuse versehenes akustoelektronisches bauelement |
JP2562661Y2 (ja) * | 1992-10-13 | 1998-02-16 | 株式会社村田製作所 | 圧電素子の実装構造 |
US5459368A (en) * | 1993-08-06 | 1995-10-17 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device mounted module |
JP3301262B2 (ja) * | 1995-03-28 | 2002-07-15 | 松下電器産業株式会社 | 弾性表面波装置 |
JP3328102B2 (ja) * | 1995-05-08 | 2002-09-24 | 松下電器産業株式会社 | 弾性表面波装置及びその製造方法 |
EP0794616B1 (en) * | 1996-03-08 | 2003-01-29 | Matsushita Electric Industrial Co., Ltd. | An electronic part and a method of production thereof |
JP3196693B2 (ja) * | 1997-08-05 | 2001-08-06 | 日本電気株式会社 | 表面弾性波装置およびその製造方法 |
JP3123477B2 (ja) * | 1997-08-08 | 2001-01-09 | 日本電気株式会社 | 表面弾性波素子の実装構造および実装方法 |
JPH11239037A (ja) * | 1998-02-20 | 1999-08-31 | Nec Corp | 弾性表面波装置 |
JP3514361B2 (ja) * | 1998-02-27 | 2004-03-31 | Tdk株式会社 | チップ素子及びチップ素子の製造方法 |
US5969461A (en) * | 1998-04-08 | 1999-10-19 | Cts Corporation | Surface acoustic wave device package and method |
US6514789B2 (en) * | 1999-10-26 | 2003-02-04 | Motorola, Inc. | Component and method for manufacture |
-
1998
- 1998-12-08 FR FR9815478A patent/FR2786959B1/fr not_active Expired - Fee Related
-
1999
- 1999-12-07 CA CA002320343A patent/CA2320343A1/fr not_active Abandoned
- 1999-12-07 JP JP2000587438A patent/JP2002532934A/ja not_active Withdrawn
- 1999-12-07 WO PCT/FR1999/003036 patent/WO2000035085A1/fr not_active Application Discontinuation
- 1999-12-07 EP EP99958258A patent/EP1053592B1/fr not_active Expired - Lifetime
- 1999-12-07 DE DE69920407T patent/DE69920407T2/de not_active Expired - Fee Related
- 1999-12-07 KR KR1020007008466A patent/KR20010040597A/ko not_active Application Discontinuation
- 1999-12-07 CN CNB998027774A patent/CN1158757C/zh not_active Expired - Fee Related
-
2001
- 2001-09-27 HK HK01106831A patent/HK1036367A1/xx not_active IP Right Cessation
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2003
- 2003-10-14 US US10/682,907 patent/US6852561B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108666410A (zh) * | 2017-03-28 | 2018-10-16 | 天津威盛电子有限公司 | 表面声波晶片级封装及其所用的pcb的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US6852561B2 (en) | 2005-02-08 |
FR2786959B1 (fr) | 2001-05-11 |
FR2786959A1 (fr) | 2000-06-09 |
DE69920407D1 (de) | 2004-10-28 |
US20040103509A1 (en) | 2004-06-03 |
HK1036367A1 (en) | 2001-12-28 |
JP2002532934A (ja) | 2002-10-02 |
EP1053592A1 (fr) | 2000-11-22 |
EP1053592B1 (fr) | 2004-09-22 |
CN1290424A (zh) | 2001-04-04 |
CA2320343A1 (fr) | 2000-06-15 |
DE69920407T2 (de) | 2005-09-29 |
WO2000035085A1 (fr) | 2000-06-15 |
KR20010040597A (ko) | 2001-05-15 |
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