CN115840123A - Transistor parameter testing device and testing method - Google Patents
Transistor parameter testing device and testing method Download PDFInfo
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- CN115840123A CN115840123A CN202310180810.9A CN202310180810A CN115840123A CN 115840123 A CN115840123 A CN 115840123A CN 202310180810 A CN202310180810 A CN 202310180810A CN 115840123 A CN115840123 A CN 115840123A
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Abstract
The invention provides a transistor parameter testing device and a testing method, which relate to the field of semiconductor device measurement, and the device comprises: the output end of the constant voltage and constant current circuit is connected with the drain electrode of the transistor to be tested and provides constant voltage and constant current for the transistor to be tested; the input end of the test circuit is connected with the first output end of the controller, the first output end is connected with the transistor to be tested, the second output end is connected with the input end of the controller, and the voltage and current signals of the transistor to be tested are acquired; the constant voltage and constant current circuit comprises a resistor array; and the controller determines the parameter value of the transistor to be tested according to the voltage and current signal of the transistor to be tested, which is acquired by the test circuit. The transistor parameter testing device and the testing method provided by the invention solve the output problem of a high-voltage high-power testing power supply so as to realize high-precision testing of a high-power transistor.
Description
Technical Field
The invention relates to the field of semiconductor device measurement, in particular to a transistor parameter testing device and a testing method.
Background
With the development of semiconductor technology, the precision requirement of the transistor tester is higher and higher. When the transistor is subjected to parameter testing, the current is large when the transistor is switched on, and the set high voltage needs to be quickly returned when the transistor is switched off, so that the instantaneous power of the transistor testing is large for the constant-voltage constant-current source.
In the prior art, parameter testing of a high-power transistor can be performed through a constant-voltage constant-current type or an inductive current-limiting pulse type of a switching power supply, however, a testing device supporting high power cannot meet the precision requirement of the parameter testing, and therefore, how to perform the parameter testing on the high-power transistor becomes a key problem.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the problem that the parameters of the high power transistor cannot be tested in the prior art, thereby providing a transistor parameter testing apparatus and a testing method.
According to a first aspect, the present invention provides a transistor parametric test apparatus, the apparatus comprising: the device comprises a controller, a constant voltage and constant current circuit and a test circuit;
the output end of the constant voltage and constant current circuit is connected with the drain electrode of the transistor to be tested and is used for providing constant voltage and constant current for the transistor to be tested;
the input end of the test circuit is connected with the first output end of the controller, the first output end of the test circuit is connected with the transistor to be tested, and the second output end of the test circuit is connected with the input end of the controller and used for providing grid voltage or current bias to the transistor to be tested according to the control signal of the controller and collecting voltage and current signals of each pin of the transistor to be tested;
the constant voltage constant current circuit includes: the constant-voltage power supply circuit comprises a constant-voltage source, a constant-current control circuit and a resistor array formed by connecting a plurality of resistance value adjusting components in series, wherein the constant-voltage source is connected with the input end of the resistor array, and the output end of the resistor array is connected with the transistor to be tested through the constant-current control circuit;
the resistance value adjusting assembly comprises: the relay comprises a first resistor and a relay connected with the first resistor in parallel;
the second output end of the controller is respectively connected with the control end of each relay of the constant voltage and constant current circuit, and the controller regulates the constant voltage and the constant current output by the constant voltage and constant current circuit by controlling each relay to act;
and the controller determines the parameter value of the transistor to be tested according to the voltage and current signal of the transistor to be tested, which is acquired by the test circuit.
In one embodiment, the test circuit includes a test source and an acquisition circuit;
the input end of the test source is connected with the first output end of the controller, the first output end of the test source is connected with the grid electrode of the transistor to be tested, and the second output end of the test source is connected with the source electrode of the transistor to be tested and used for providing grid voltage or current bias for the transistor to be tested according to the control signal of the controller;
the input end of the acquisition circuit is connected with the transistor to be tested, and the output end of the acquisition circuit is connected with the input end of the controller and used for acquiring voltage and current signals of a source electrode, a grid electrode and a drain electrode of the transistor to be tested.
In an embodiment, the test circuit further includes a polarity switch, a control end of the polarity switch is connected to the controller, two fixed ends are respectively connected to two output ends of the constant voltage and constant current circuit in a one-to-one correspondence, and two active ends corresponding to each fixed end are respectively connected to a source electrode and a drain electrode of the transistor to be tested.
In one embodiment, the acquisition circuit comprises a second comparator, a third comparator and a current acquisition device;
the positive input end of the second comparator is connected to the drain electrode of the transistor to be tested, the negative input end of the second comparator is connected to the source electrode of the transistor to be tested, and the output end of the second comparator is connected to the input end of the controller;
the positive input end of the third comparator is connected to the grid electrode of the transistor to be tested, the negative input end of the third comparator is connected to the source electrode of the transistor to be tested, and the output end of the third comparator is connected to the input end of the controller;
the current acquisition device is arranged on the source electrode of the transistor to be tested and is connected with the input end of the controller.
In one embodiment, the constant current control circuit comprises a first comparator, a second resistor, a third resistor and a plurality of power tubes;
the positive input end of the first comparator is externally connected with a reference voltage and is connected with the transistor to be tested through the second resistor, the negative input end of the first comparator is connected with the output end of the first comparator through a capacitor, and the output end of the first comparator is respectively connected with the control end of each power tube;
the first output end of each power tube is respectively connected with the output end of the resistor array, and the second output end is connected between the second resistor and the transistor to be tested through the third resistor.
In one embodiment, the polarity switch is a relay.
In an embodiment, the acquisition circuit further comprises: and the input end of the analog-to-digital converter is respectively connected with the output end of the second comparator, the output end of the third comparator and the current acquisition device, and the output end of the analog-to-digital converter is connected with the input end of the controller.
In one embodiment, the current collection device is a current transformer.
According to a second aspect, the present invention provides a transistor parameter testing method applied to the controller according to any one of the first aspect and its optional embodiments, the method comprising:
obtaining a test voltage and a test current;
calculating a test resistance value based on the test voltage and the test current;
controlling the relay of each resistance value adjusting assembly to act based on the test resistance value, and sending a control signal to a test circuit to enable the test circuit to provide grid voltage or current bias for a transistor to be tested;
receiving a voltage current signal of a transistor to be tested, which is acquired by the test circuit; and determining the parameter value of the transistor to be tested according to the voltage and current signal.
In an embodiment, the test circuit further includes a polarity switch, a control end of the polarity switch is connected to the controller, two fixed ends are respectively connected to two output ends of the constant voltage and constant current circuit in a one-to-one correspondence manner, two movable ends corresponding to each fixed end are respectively connected to a source and a drain of the transistor to be tested, and before controlling the relay of each resistance value adjusting component to operate based on the test resistance value, the method further includes:
acquiring polarity information of a transistor to be tested;
and controlling a polarity change-over switch in the test circuit to act based on the polarity information of the transistor to be tested so that the constant voltage and constant current circuit is connected with the transistor to be tested according to the polarity of the transistor to be tested.
The technical scheme of the invention has the following advantages:
the embodiment of the invention provides a transistor parameter testing device, which adopts a mode that a resistor array is connected with a constant-voltage constant-current circuit in series, solves the problem of providing high-power voltage and current for a transistor to be tested, and reduces the bearing power of the transistor in the constant-voltage constant-current circuit in the parameter testing process of the transistor to be tested through the voltage division of the resistor array so as to prevent the transistor from being damaged in the safe working interval.
The embodiment of the invention provides a transistor parameter testing method, which is characterized in that a testing resistance value is calculated according to a testing voltage and a testing current, and a relay in a resistance value adjusting assembly is controlled according to the testing resistance value, so that the adjustability of the resistance value of a resistor is realized, and the bearing power of a transistor in a constant-voltage constant-current circuit is reduced when the transistor to be tested is subjected to parameter testing, so that the transistor is prevented from being damaged in a safe working interval.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a block diagram of a transistor parameter testing apparatus according to an embodiment of the present invention;
fig. 2 is a circuit diagram of a constant voltage and constant current circuit according to an embodiment of the present invention;
FIG. 3 is a circuit diagram of a test circuit according to an embodiment of the present invention;
fig. 4 is a flowchart of a transistor parameter testing method according to an embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
With the development of semiconductor technology, the power of transistors is higher and higher, and the requirements on a tester are higher and higher. During the parametric test, the instantaneous power of the transistor test is large, for example, when the transistor is tested at 1000V and 300A, the instantaneous power of the transistor is 300kW.
In order to solve the problem of high-power test, a common scheme comprises a switching power supply constant-voltage constant-current type and an inductive current-limiting pulse type. The switching power supply type constant current speed is low, and the precision is low. The inductive current-limiting pulse type is inaccurate in current adjustment, and mostly adopts an approximate current testing method to test a value, so that the testing precision is low. Therefore, it is not easy to perform parametric testing on the high power transistor.
In order to implement parameter testing on a high-power transistor, an embodiment of the present invention provides a transistor parameter testing apparatus, which includes, as shown in fig. 1, a controller 1, a constant voltage and constant current circuit 2, and a testing circuit 3.
The output end of the constant voltage and constant current circuit 2 is connected with the drain electrode of the transistor to be tested and used for providing constant voltage and constant current for the transistor to be tested.
The input end of the test circuit 3 is connected with the first output end of the controller 1, the first output end is connected with the transistor to be tested, and the second output end is connected with the input end of the controller 1, and is used for providing grid voltage or current bias to the transistor to be tested according to the control signal of the controller 1 and collecting voltage and current signals of each pin of the transistor to be tested.
The controller 1 determines the parameter value of the transistor to be tested according to the voltage and current signal of the transistor to be tested acquired by the test circuit 3.
The controller 1 is a programmable controller, and constant voltage and constant current are provided by the constant voltage and constant current circuit 2, so that the transistor to be tested is in a constant voltage and constant current environment, and the test circuit 3 collects voltage and current signals of the transistor to be tested, so that the condition that the transistor is damaged due to the fact that the instantaneous power is too large during testing is avoided.
Specifically, as shown in fig. 2, the constant-voltage constant-current circuit 2 includes: the constant voltage source 21, the constant current control circuit 22 and the resistor array 23 formed by connecting a plurality of resistance value adjusting components in series, the constant voltage source 21 is connected with the input end of the resistor array 23, and the output end of the resistor array 23 is connected with the transistor to be tested through the constant current control circuit 22.
Specifically, the resistor array 23 includes a first resistor and a relay connected in parallel with the first resistor, for example, in the embodiment of the present application, sixteen groups of the resistor array 23 are taken as an example, the resistor array 23 includes sixteen resistors R1 to R16 and sixteen relays K1A to K16A, each relay is connected in parallel with a corresponding resistor, and the relays operate according to a control signal sent by the controller 1.
In order to realize the output of the constant current under the condition of larger power, the resistor array 23 is combined with the constant voltage and constant current circuit 2, so that the accurate constant current output can be output under the condition of larger power, and the measurement precision is improved.
The second output end of the controller 1 is respectively connected with the control end of each relay of the constant voltage and constant current circuit 2, and the controller 1 adjusts the constant voltage and the constant current output by the constant voltage and constant current circuit 2 by controlling the action of each relay.
The controller 1 determines the parameter value of the transistor to be tested according to the voltage and current signal of the transistor to be tested acquired by the test circuit 3.
In the embodiment of the present invention, the constant voltage source 21 can realize a program-controlled constant voltage function and output a constant voltage. The constant current is provided by the constant voltage source 21 and the resistor array 23 to provide a constant voltage and a constant current for the transistor under test. Sixteen relays are used as sixteen-bit digital potentiometers, and sixteen-bit resistor arrays 23 are formed by connecting the relays and resistors in series, so that the resistance values of the resistors can be adjusted according to actual test requirements in the parameter test process, and the adjustability of the resistance values of the resistors is guaranteed.
The resistor array 23 is added on the basis of simulating negative feedback constant voltage and constant current, and the resistance is adjusted by a relay, wherein the resistor is a high-power constantan wire resistor, the constantan wire resistor bears large overcurrent and can bear large power, and therefore the problem that a transistor exceeds a safe working area due to instant bearing of large power to cause damage is avoided.
Through the embodiment, the problem of providing high-power and accurate voltage and current for the transistor to be tested is solved by adopting the mode that the resistor array is connected with the constant-voltage constant-current circuit in series, and the bearing power of the transistor in the constant-voltage constant-current circuit is reduced in the parameter test process of the transistor to be tested through the voltage division of the resistor array, so that the transistor is in the safe working interval to avoid damage.
Specifically, in one embodiment, as shown in FIG. 3, the test circuit 3 includes a test source 31 and an acquisition circuit 32.
The input end of the test source 31 is connected to the first output end of the controller 1, the first output end is connected to the gate of the transistor to be tested, and the second output end is connected to the source of the transistor to be tested, and is configured to provide gate voltage or current bias to the transistor to be tested according to the control signal of the controller 1.
The input end of the acquisition circuit 32 is connected with the transistor to be tested, and the output end is connected with the input end of the controller 1, and is used for acquiring voltage and current signals of the source electrode, the grid electrode and the drain electrode of the transistor to be tested.
In the embodiment of the present invention, the test source 31 is a floating gate test VI source, and the floating gate test VI source is a high-precision four-quadrant power supply module that operates by using an isolation power supply, and is configured to provide voltage or current bias to a gate of a transistor to be tested.
The collecting circuit 32 may be a voltage and current measuring module, where the voltage and current measuring module is used to collect voltage and current signals of each pin of the transistor to be measured, or may be other modules capable of collecting voltage and current signals of the transistor, and is not limited here.
Specifically, in an embodiment, as shown in fig. 3, the test circuit 3 further includes a polarity switch 33, a control end of the polarity switch 33 is connected to the controller 1, two fixed ends are respectively connected to two output ends of the constant voltage and constant current circuit 2 in a one-to-one correspondence manner, and two active ends corresponding to each fixed end are respectively connected to a source and a drain of the transistor to be tested.
In the embodiment of the present invention, the polarity switch 33 is a relay, and the polarity switch 33 includes two normally-closed terminals and two active terminals, where the two normally-closed terminals of the polarity switch 33 are respectively connected to the HF terminal and the LF terminal of the constant voltage and constant current circuit 2, and the two active terminals are respectively connected to the source and the drain of the transistor to be controlled.
Illustratively, when the transistor to be tested has a positive polarity, the active terminal of the polarity switch 33 does not act, the HF terminal of the constant voltage and constant current circuit 2 is connected to the drain of the transistor to be tested, and the LF terminal is connected to the source of the transistor to be tested; when the transistor to be tested has negative polarity, the active end of the polarity switch 33 is switched, the HF end of the constant voltage and constant current circuit 2 is connected to the source of the transistor to be tested, and the LF end is connected to the drain of the transistor to be tested.
The polarity switch 33 may be other controlled switches capable of implementing corresponding functions, and is not limited herein.
The polarity of the output of the constant voltage and constant current circuit 2 is adjusted through the polarity change-over switch 33, so that the testing of the positive and negative transistors can be realized, and the adaptability between the testing device and the transistors with different polarities can be improved.
Specifically, in an embodiment, as shown in fig. 3, the collecting circuit 32 includes a second comparator U2, a third comparator U3 and a current collecting device 321.
The positive input end of the second comparator U2 is connected to the drain electrode of the transistor to be tested, the negative input end is connected to the source electrode of the transistor to be tested, and the output end is connected to the input end of the controller 1;
the positive input end of the third comparator U3 is connected to the grid electrode of the transistor to be tested, the negative input end is connected to the source electrode of the transistor to be tested, and the output end is connected to the input end of the controller 1;
the current collecting device 321 is disposed at the source of the transistor to be tested and connected to the input terminal of the controller 1.
In the embodiment of the present invention, the current collecting device 321 may be a current transformer, or may be other components capable of collecting current, and is not limited herein.
Specifically, in one embodiment, as shown in fig. 2, the constant current control circuit 22 includes a first comparator U1, a second resistor R20, a third resistor R19, and several power transistors.
The positive input end of the first comparator U1 is externally connected with a reference voltage and is connected with a transistor to be tested through a second resistor R20, the positive input end of the first comparator U1 is further connected with a digital-to-analog converter through a fourth resistor R18, the reverse input end is connected with the output end through a capacitor C1, the reverse input end is grounded through a fifth resistor R17, Q in QGND in FIG. 2 represents different reference grounds for distinguishing from a test ground GND, and the output end is respectively connected with the control end of each power tube.
The first output end of each power tube is respectively connected with the output end of the resistor array 23, and the second output end is connected between the second resistor R20 and the transistor to be tested through the third resistor R19.
In the embodiment of the invention, the power tubes comprise six power tubes Q1-Q6, and the output end of the first comparator U1 is connected with the control end of each power tube so as to control the conduction states of the power tubes Q1-Q6.
It should be noted that, when the transistor to be tested is subjected to parameter test, the test source 31 and the constant current control circuit 22 output at the same time, and the number of the power tubes is calculated by the maximum test power, the safe operating region of the power tubes, and the overcurrent capacity.
Specifically, the maximum power p of a single power tube is obtained according to the power of the power tube and 80% of the safe working interval. In order to ensure that the constant current is accurate, a certain DS voltage adjustment is necessary, in the embodiment of the present application, a DS voltage adjustment of 5-10V is selected, so that under the condition that the constant current is 300A, the maximum power P =10w × 3000a =3kw of the power tube, and then the number N = P/P of the power tubes, not only can the normal constant current be ensured, but also the number of the power tubes can be reduced to the maximum extent, and the purpose of saving cost can be achieved.
Specifically, in one embodiment, as shown in fig. 3, the acquisition circuit 32 further includes: an input end of the analog-to-digital converter 322 is connected to the output end of the second comparator U2, the output end of the third comparator U3, and the current collecting device 321, respectively, and an output end of the analog-to-digital converter 322 is connected to an input end of the controller 1.
In the embodiment of the present invention, the input terminal of the analog-to-digital converter 322 includes three terminals of VCE SENSE, I SENSE and VG SENSE, wherein the VCE SENSE terminal is connected to the output terminal of the second comparator U2, the I SENSE terminal is connected to the current collecting device 321, and the VG SENSE terminal is connected to the output terminal of the third comparator U3. The output terminal of the analog-to-digital converter 322 is connected to the input terminal of the controller 1, so that the controller 1 receives the signal collected by the analog-to-digital converter 322.
An embodiment of the present invention further provides a transistor parameter testing method, which is applied to the controller of the transistor parameter testing apparatus, as shown in fig. 4, and the method includes the following steps S101 to S104.
Step S101: and acquiring a test voltage and a test current.
In the embodiment of the invention, the test voltage and the test current input by the user are obtained, and when the test voltage and the test current input by the user are received, the parameter test is started to be performed on the transistor to be tested.
Step S102: a test resistance value is calculated based on the test voltage and the test current.
In the embodiment of the invention, the product of the test voltage U and the test current I is calculated according to the test voltage U and the test current I to obtain the corresponding power value. If the power value is less than 3kW, the transistor is a low-power transistor, and the transistor is directly subjected to parameter test. If the power value is more than 3kW, the transistor is a high-power transistor, and the corresponding test resistance value R set = (U*I-3000)/I 2 Wherein R is set Is 0 to 3.27KOmega.
Step S103: and controlling the relay in each resistance adjusting component to act based on the test resistance value, and sending a control signal to the test circuit so that the test circuit provides grid voltage or current bias for the transistor to be tested.
In the embodiment of the invention, according to the test resistance value, the control signal of the relay is calculated according to the following formula:
D set = R set /3.27K*65535（1）
to D set Rounding, converting into sixteen-bit binary values, and inverting according to bit to obtain control values of sixteen relays, wherein 1 is closed and 0 is open.
For example, when the test resistance value is 50m Ω, the Dset value is 0 xffffe, the corresponding binary value is 1111 1111 1111 1110, which corresponds to the switch values of K16 to K1, that is, K1 is open, and the rest of the switches are closed.
Step S104: and receiving the voltage and current signals of the transistor to be tested, which are acquired by the test circuit, and determining the parameter value of the transistor to be tested according to the voltage and current signals.
In the embodiment of the invention, the test circuit finishes VGE, IC and VCE signal sampling, closes the output after the sampling is finished, and obtains the parameter test result by a waveform processing program for the sampled waveform. The processing of the sampled waveform by the waveform processing program is prior art and is not described herein again.
Through the embodiment, the test resistance value is calculated according to the test voltage and the test current, so that the relay in the resistance value adjusting assembly is controlled according to the test resistance value, the adjustability of the resistance value is realized, the bearing power of the transistor in the constant-voltage constant-current circuit is reduced when the transistor to be tested is subjected to parameter test, and the transistor is prevented from being damaged in the safe working interval.
Specifically, in an embodiment, the transistor parameter testing method provided in the embodiment of the present invention further includes the following steps:
step S201: and acquiring the polarity information of the transistor to be tested.
Step S202: and controlling the action of a polarity switch in the test circuit based on the polarity information of the transistor to be tested so that the constant-voltage constant-current circuit is connected with the transistor to be tested according to the polarity of the transistor to be tested.
In the embodiment of the invention, because the polarity of the transistors to be tested is different, the polarity of the polarity switch in the test circuit needs to be switched, so that the polarity switch is controlled to act according to the polarity information of the transistors to be tested, and the parameter test of the transistors with different polarities can be realized.
The polarity change-over switch is controlled to act according to the polarity of the transistor to be tested, so that the transistor to be tested is automatically subjected to parameter testing after the polarity change-over switch acts, and automatic parameter testing of the transistor is achieved.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the spirit or scope of the invention.
Claims (10)
1. A transistor parameter testing device is characterized by comprising a controller, a constant voltage and constant current circuit and a testing circuit;
the output end of the constant voltage and constant current circuit is connected with the drain electrode of the transistor to be tested and is used for providing constant voltage and constant current for the transistor to be tested;
the input end of the test circuit is connected with the first output end of the controller, the first output end of the test circuit is connected with the transistor to be tested, the second output end of the test circuit is connected with the input end of the controller, and the test circuit is used for providing grid voltage or current bias to the transistor to be tested according to the control signal of the controller and collecting voltage and current signals of each pin of the transistor to be tested;
the constant voltage constant current circuit includes: the constant voltage source is connected with the input end of the resistor array, and the output end of the resistor array is connected with the transistor to be tested through the constant current control circuit;
the resistance value adjusting assembly comprises: the relay comprises a first resistor and a relay connected with the first resistor in parallel;
the second output end of the controller is respectively connected with the control end of each relay of the constant voltage and constant current circuit, and the controller regulates the constant voltage and the constant current output by the constant voltage and constant current circuit by controlling each relay to act;
and the controller determines the parameter value of the transistor to be tested according to the voltage and current signal of the transistor to be tested, which is acquired by the test circuit.
2. The apparatus of claim 1, wherein the test circuit comprises a test source and an acquisition circuit;
the input end of the test source is connected with the first output end of the controller, the first output end of the test source is connected with the grid electrode of the transistor to be tested, and the second output end of the test source is connected with the source electrode of the transistor to be tested and used for providing grid voltage or current bias for the transistor to be tested according to the control signal of the controller;
the input end of the acquisition circuit is connected with the transistor to be tested, and the output end of the acquisition circuit is connected with the input end of the controller and used for acquiring voltage and current signals of a source electrode, a grid electrode and a drain electrode of the transistor to be tested.
3. The device according to claim 2, wherein the test circuit further comprises a polarity switch, a control end of the polarity switch is connected with the controller, two fixed ends are respectively connected with two output ends of the constant voltage and constant current circuit in a one-to-one correspondence manner, and two movable ends corresponding to each fixed end are respectively connected with a source electrode and a drain electrode of the transistor to be tested.
4. The apparatus of claim 2, wherein the acquisition circuit comprises a second comparator, a third comparator, and a current acquisition device;
the positive input end of the second comparator is connected to the drain electrode of the transistor to be tested, the negative input end of the second comparator is connected to the source electrode of the transistor to be tested, and the output end of the second comparator is connected to the input end of the controller;
the positive input end of the third comparator is connected to the grid electrode of the transistor to be tested, the negative input end of the third comparator is connected to the source electrode of the transistor to be tested, and the output end of the third comparator is connected to the input end of the controller;
the current acquisition device is arranged on the source electrode of the transistor to be tested and is connected with the input end of the controller.
5. The device of claim 1, wherein the constant current control circuit comprises a first comparator, a second resistor, a third resistor and a plurality of power tubes;
the positive input end of the first comparator is externally connected with a reference voltage and is connected with the transistor to be tested through the second resistor, the negative input end of the first comparator is connected with the output end of the first comparator through a capacitor, and the output end of the first comparator is respectively connected with the control end of each power tube;
the first output end of each power tube is respectively connected with the output end of the resistor array, and the second output end is connected between the second resistor and the transistor to be tested through the third resistor.
6. The apparatus of claim 3, wherein the polarity switch is a relay.
7. The apparatus of claim 4, wherein the acquisition circuit further comprises: and the input end of the analog-to-digital converter is respectively connected with the output end of the second comparator, the output end of the third comparator and the current acquisition device, and the output end of the analog-to-digital converter is connected with the input end of the controller.
8. The apparatus of claim 7, wherein the current collection device is a current transformer.
9. A transistor parameter testing method applied to a controller of the transistor parameter testing apparatus according to any one of claims 1 to 8, the method comprising:
obtaining a test voltage and a test current;
calculating a test resistance value based on the test voltage and the test current;
controlling the relay of each resistance value adjusting assembly to act based on the test resistance value, and sending a control signal to a test circuit to enable the test circuit to provide grid voltage or current bias for a transistor to be tested;
and receiving the voltage and current signals of the transistor to be tested, which are acquired by the test circuit, and determining the parameter value of the transistor to be tested according to the voltage and current signals.
10. The method according to claim 9, wherein the test circuit further comprises a polarity switch, a control terminal of the polarity switch is connected to the controller, two fixed terminals are respectively connected to two output terminals of the constant voltage and constant current circuit in a one-to-one correspondence, two movable terminals corresponding to each fixed terminal are respectively connected to a source and a drain of the transistor to be tested, and before controlling the relay of each resistance adjusting assembly to operate based on the test resistance value, the method further comprises:
acquiring polarity information of a transistor to be tested;
and controlling a polarity change-over switch in the test circuit to act based on the polarity information of the transistor to be tested so that the constant voltage and constant current circuit is connected with the transistor to be tested according to the polarity of the transistor to be tested.
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