CN115798949A - RF MEMS switch and electronic equipment - Google Patents
RF MEMS switch and electronic equipment Download PDFInfo
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- CN115798949A CN115798949A CN202211581481.0A CN202211581481A CN115798949A CN 115798949 A CN115798949 A CN 115798949A CN 202211581481 A CN202211581481 A CN 202211581481A CN 115798949 A CN115798949 A CN 115798949A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/06—Contacts characterised by the shape or structure of the contact-making surface, e.g. grooved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/12—Contacts characterised by the manner in which co-operating contacts engage
- H01H1/14—Contacts characterised by the manner in which co-operating contacts engage by abutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
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- Micromachines (AREA)
Abstract
The application relates to the field of radio frequency switches, and discloses an RF MEMS switch and electronic equipment, which comprise a cantilever beam; the first contact is arranged at the free end of the cantilever beam; a second contact disposed opposite the first contact; the first contact and the second contact are in structural ultra-sliding contact when in contact; and the driving electrode is used for driving the free end of the cantilever beam to generate displacement so as to enable the first contact and the second contact to be contacted or separated. At least one of the first contact and the second contact is a contact with a layered structure inside, the first contact is in ultra-smooth contact with the second contact, friction between the first contact and the second contact is almost close to zero, abrasion is zero, the service life of the first contact and the service life of the second contact are prolonged, and the service life of the RF MEMS switch is prolonged.
Description
Technical Field
The present application relates to the field of radio frequency switches, and more particularly, to an RF MEMS switch and an electronic device.
Background
The RF MEMS (Radio Frequency Micro-Electro-Mechanical System) switch has the characteristics of high linearity, low insertion loss, high isolation, low energy consumption, small volume and the like, and can be applied to systems such as wireless communication, phased array radar, instruments and meters, medical equipment and the like.
At present, an RF MEMS switch is generally an electrostatic driving contact RF MEMS switch, and a schematic structural diagram of the RF MEMS switch is shown in fig. 1, where an input end, an upper contact 2', a lower contact 3', and a cantilever beam 1 are all electric conductors, and the upper contact 2 'and the lower contact 3' constitute an output end. An upper polar plate 4 'is attached to the cantilever beam 1, a lower polar plate 5' is arranged on the substrate 7, and the cantilever beam 1 is elastically deformed under the drive of electrostatic force by applying voltage between the upper polar plate 4 'and the lower polar plate 5', so that an upper contact 2 'and a lower contact 3' which are distributed at the tail ends of the cantilever beam 1 and the substrate 7 are mutually contacted, and a switch is closed to form a signal path; when the applied voltage is removed, the cantilever beam 1 is deformed and recovered, the upper contact 2 'and the lower contact 3' are separated, and the signal is disconnected. When the electrostatic driving contact type RF MEMS switch is used, the upper contact 2' and the lower contact 3' are contacted, and current flows to the upper contact 2' through the cantilever beam 1, then flows to the lower contact 3' through the interface of the upper contact 2' and the lower contact 3', and is output by the lower contact 3 '. Limited by the current processing technology and material rigidity, the upper contact 2 'and the lower contact 3' may slip when contacting, thereby causing a wear phenomenon, which may result in a short lifetime of the contacts and thus seriously affect the lifetime of the electrostatically driven contact RF MEMS switch.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
It is an object of the present application to provide an RF MEMS switch and an electronic device to improve the reliability and lifetime of the RF MEMS switch.
To solve the above technical problem, the present application provides an RF MEMS switch, comprising:
a cantilever beam;
the first contact is arranged at the free end of the cantilever beam;
a second contact disposed opposite the first contact;
the first contact and the second contact are in structural ultra-smooth contact when in contact;
and the driving electrode is used for driving the free end of the cantilever beam to generate displacement so as to enable the first contact and the second contact to be contacted or separated.
Optionally, in the RF MEMS switch, when at least one of the first contact and the second contact is a contact having a layered structure inside, the method further includes:
and the conductive wrapping layer surrounds the contact side surface of the inner laminated structure.
Optionally, the RF MEMS switch further includes:
a bump connected with the first contact and disposed opposite the second contact, and/or connected with the second contact and disposed opposite the first contact; the surfaces of the protrusions opposite to the first contact and the second contact are atomically smooth surfaces.
Optionally, in the RF MEMS switch, a surface of the protrusion opposite to the first contact and the second contact is an arc surface.
Optionally, in the RF MEMS switch, a surface of the protrusion opposite to the first contact and the second contact is a plane.
Optionally, in the RF MEMS switch, the height of the conductive wrapping layer is greater than the first height and less than or equal to the second height; wherein the first height is a height of the first contact or the second contact, and the second height is a sum of heights of the bump and the first contact, or the second height is a sum of heights of the bump and the second contact.
Optionally, the contact with the inner part of the layered structure is a graphite contact or a multi-layer graphene contact.
Optionally, in the RF MEMS switch, the driving electrode includes a first electrode and a second electrode, the first electrode is connected to a lower surface of the cantilever beam, and the second electrode is disposed opposite to the first electrode.
Optionally, in the RF MEMS switch, the first contact includes a plurality of first contact units connected in parallel, and the second contact includes a plurality of second contact units connected in parallel; when the first contact contacts with the second contact, the first contact units contact with the second contact units in a one-to-one correspondence manner.
The present application further provides an electronic device comprising any of the RF MEMS switches described above.
An RF MEMS switch provided by the present application includes: a cantilever beam; the first contact is arranged at the free end of the cantilever beam; a second contact disposed opposite the first contact; the first contact and the second contact are in structural ultra-smooth contact when in contact; and the driving electrode is used for driving the free end of the cantilever beam to generate displacement so as to enable the first contact and the second contact to be contacted or separated.
It is thus clear that including cantilever beam, first contact, second contact, electrically conductive parcel layer and drive electrode in the RF MEMS switch of this application, for structure ultra-smooth contact when first contact and second contact, the friction is nearly near zero, wearing and tearing are zero between first contact and the second contact for first contact and second contact life extension, thereby extension RF MEMS switch's life.
In addition, the application also provides the electronic equipment with the advantages.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art electrostatically actuated contact RF MEMS switch;
FIG. 2 is a schematic diagram of an RF MEMS switch provided in an embodiment of the present application;
FIG. 3 is a schematic diagram of the current flowing between the first contact and the second contact through the circuit;
FIG. 4 is a schematic diagram of another RF MEMS switch provided in the embodiments of the present application;
fig. 5 is a schematic structural diagram of another RF MEMS switch provided in the embodiments of the present application.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced otherwise than as specifically described herein, and it will be appreciated by those skilled in the art that the present invention may be practiced without departing from the spirit and scope of the present invention and that the present invention is not limited by the specific embodiments disclosed below.
As described in the background section, when the electrostatically actuated contact RF MEMS switch is used, the upper contact and the lower contact are contacted, and a current flows to the upper contact through the cantilever beam, then to the lower contact through the interface of the upper contact and the lower contact, and is outputted from the lower contact. The service life of the electrostatic driving contact type RF MEMS switch is seriously influenced by the phenomena of interface friction abrasion, ablation, material transfer, resistance increase and the like between the upper contact and the lower contact.
In view of the above, the present application provides an RF MEMS switch, and referring to fig. 2, the RF MEMS switch includes:
a cantilever beam 1;
the first contact 2 is arranged at the free end of the cantilever beam 1;
a second contact 3 disposed opposite to the first contact 2;
the first contact 2 and the second contact 3 are in structural ultra-smooth contact when in contact;
and the driving electrode is used for driving the free end of the cantilever beam 1 to generate displacement so as to enable the first contact 2 and the second contact 3 to be contacted or separated.
The ultra-smooth contact of the structure means that the friction force between the surfaces of the first contact 2 and the second contact 3 is almost zero, the abrasion is zero, and the contact area of the interface is close to 100 percent, so that the abrasion of the RF MEMS switch can not occur, and the service life and the operating power of the RF MEMS switch are improved.
When the structure ultra-sliding contact state is formed, at least one of the lower surface of the first contact 2 and the upper surface of the second contact 3 is a single crystal two-dimensional interface, and the single crystal two-dimensional interface is an atomically flat surface. An atomically flat surface refers to a surface having a roughness of less than 1 nm. The atomically flat surface can be obtained by processing the surface, and the atomically flat surface is the property of a single-crystal two-dimensional material.
When the first contact 2 is a graphite ultra-smooth contact, the upper surface of the second contact 3 is an atomically flat surface or the second contact 3 is also a single crystal two-dimensional material; when the second contact 3 is a graphite ultra-smooth contact, the lower surface of the first contact 2 is an atomically flat surface or the first contact 2 is also a single-crystal two-dimensional material.
The method is limited by the current processing technology and material rigidity, two contacts in the prior art can slide when in contact, so that the abrasion phenomenon is caused, the service life of the contacts is short, and meanwhile, when the two contacts in the prior art are in contact, the service life of the RF MEMS switch is greatly shortened due to the phenomena of interface contact impact, frictional abrasion, arc discharge and the like. For the structure ultra-smooth contact between first contact 2 and the second contact 3 in this application, can prolong RF MEMS switch's life, and the surface that first contact 2 and second contact 3 contacted each other reaches atomic level smoothly, so the area of contact of first contact 2 and second contact 3 when the contact is showing the increase when being compared with non-ultra-smooth contact, make current output density bigger, electric conductive property is more excellent, can improve power throughput effectively, make RF MEMS switch have higher linearity simultaneously.
The internal structure of the first contact 2 and the second contact 3 is not limited in this application, for example, the first contact 2 and/or the second contact 3 may have a laminated structure or a non-laminated structure.
In the present application, the shape of the first contact 2 and the second contact 3 is not limited as appropriate. For example, the shape of the first contact 2 and the second contact 3 may be a rectangular parallelepiped, a square, a cylinder, or the like.
The material of the cantilever beam 1 may be a metal material such as copper, iron, platinum, aluminum, zinc, titanium, tungsten, gold, etc.
In one embodiment, the driving electrode includes a first electrode 4 and a second electrode 5, the first electrode 4 is connected to the lower surface of the cantilever 1, and the second electrode 5 is disposed opposite to the first electrode 4.
Further, the method can also comprise the following steps:
and the insulating layer 8 is arranged on the upper surface of the second electrode 5.
Optionally, the RF MEMS switch may further include:
the base plate 7, the stiff end of cantilever beam 1 with base plate 7 is connected, the second electrode 5 with second contact 3 is located the upper surface of base plate 7.
The working principle of the RF MEMS switch in the embodiment is as follows: when a driving voltage V is applied between the first electrode 4 and the second electrode 5, the cantilever beam 1 moves downwards under the action of electrostatic force to drive the first contact 2 and the second contact 3 to be closed, and a current signal input end and an output end are communicated. At this time, the external radio frequency current circuit is connected, and a radio frequency current signal flows in from the input end, passes through the conductive cantilever beam 1, passes through the first contact 2 and the second contact 3, and then flows out from the output end. When the driving voltage V is cancelled, the cantilever beam 1 is restored to the initial state, the first contact 2 is separated from the second contact 3, the input end is disconnected with the output end, and the external radio frequency current circuit is cut off.
The RF MEMS switch comprises a cantilever beam 1, a first contact 2, a second contact 3, a conductive wrapping layer 6 and a driving electrode, wherein the first contact is in ultra-smooth contact with the second contact, friction between the first contact and the second contact is almost close to zero, abrasion is zero, the service life of the first contact and the service life of the second contact are prolonged, and the service life of the RF MEMS switch is prolonged.
On the basis of the above embodiments, in an embodiment of the present application, when at least one of the first contact 2 and the second contact 3 is a contact having a layered structure inside, the RF MEMS switch further includes:
and a conductive wrapping layer 6 surrounding the contact-side surface of the inner layered structure.
The contact with the inner part of the laminated structure can be a graphite contact or a multi-layer graphene contact and the like.
The first contact 2 and the second contact 3 comprise three combination conditions, and in the first condition, the first contact 2 and the second contact 3 are both contacts with the inner part of a laminated structure; secondly, the first contact 2 is a contact with a layered structure inside, and the second contact 3 is a metal contact; thirdly, the first contact 2 is a metal contact, and the second contact 3 is a contact with a layered structure inside. The material of the metal contact includes, but is not limited to, any one or any combination of nickel, copper, iron, platinum, aluminum, zinc, titanium, tungsten, gold.
When the first contact 2 is a contact with a layered structure inside, the conductive wrapping layer 6 can also realize stable connection between the first contact 2 and the cantilever beam 1.
It will be appreciated that since the first and second contacts 2, 3 need to be contacted, the height of the conductive wrap-around layer 6 is preferably less than the height of the contacts with the layered structure inside, as shown in figure 2. Of course, the height of the conductive wrap 6 may also be equal to the height of the contacts of the surrounded layered structure.
The graphite contact is of a multi-layer structure, so that the layering condition is easy to occur, and the conductive wrapping layer 6 which surrounds the side surface of the graphite contact can be a metal wrapping layer, so that the graphite contact can be protected, and the layering of the graphite contact is avoided; on the other hand, the total resistance of the switching system when the first contact 2 is in contact with the second contact 3 can be reduced. Referring to fig. 3, when a current flows through the graphite contact, when the conductive coating 6 is not disposed on the side surface, electrons are transmitted between layers of the graphite contact, the resistance ratio between the layers is large, and when one of the first contact 2 and the second contact 3 is a graphite contact, and the other is a metal contact, the resistance of the interface is large when the two contacts are in contact; when the conductive coating layer 6 is arranged, current enters the part of the graphite contact which is not coated by the conductive coating layer 6 through the conductive coating layer 6 on the side surface, the current is transmitted into the graphite contact from the side surface edge of the graphite contact, the bottommost layer of the graphite contact is a single-layer graphene surface, the carbon atoms in the graphite contact are not provided with redundant electrons, the carbon atoms on the side surface are exposed, redundant non-bonded electrons exist, the side surface contact resistance between the graphite contact and the conductive coating layer 6 is obviously reduced, the resistance value can be reduced by three orders of magnitude, the resistance of the RF MEMS switch is reduced, the energy loss is reduced, and the service life is prolonged.
In the embodiment, the conductive wrapping layer 6 is arranged on the side surface of the contact with the inside in a layered structure, so that the contact with the inside in a layered structure can be prevented from being layered and peeled, and the reliability and the service life of the RF MEMS switch are improved; and when the first contact 2 contacts with the second contact 3, the current flows into the contact with the inner part of the laminated structure from the conductive wrapping layer 6 on the side surface, and the side surface contact resistance between the conductive wrapping layer 6 and the contact with the inner part of the laminated structure is small, so that the total resistance of the RF MEMS switch is reduced, the energy loss is reduced, the radio frequency performance is improved, and the service life is prolonged.
Referring to fig. 4, based on the above embodiments, in an embodiment of the present application, the RF MEMS switch further includes:
a bump 9, wherein the bump 9 is connected with the first contact 2 and is arranged opposite to the second contact 3, and/or the bump 9 is connected with the second contact 3 and is arranged opposite to the first contact 2; the surfaces of the protrusions 9 opposite to the first contact 2 and the second contact 3 are atomically smooth surfaces.
The protrusions 9 may be provided on the lower surface of the first contact 2, or on the upper surface of the second contact 3, or on both the lower surface of the first contact 2 and the upper surface of the second contact 3. Shown in fig. 4 with the bump 9 on the upper surface of the second contact 3.
The surfaces of the protrusions 9 opposite to the first contact 2 and the second contact 3 are atomically smooth surfaces, and when the RF MEMS switch is closed, the protrusions 9 are in structural ultra-smooth contact with the surfaces in contact.
Optionally, as an implementation manner, surfaces of the protrusion 9 opposite to the first contact 2 and the second contact 3 are arc surfaces, as shown in fig. 4, at this time, an edge effect of the protrusion 9 may be avoided to increase friction, and a point discharge phenomenon may be avoided, so as to further prolong a service life of the RF MEMS switch; however, the present application is not limited to this, and as another embodiment, a surface of the protrusion 9 opposite to the first contact 2 and the second contact 3 is a plane, as shown in fig. 5.
Preferably, the protrusion 9 and the connected first contact 2 or second contact 3 are of an integral structure, which can reduce the processing difficulty.
It is noted that, when the RF MEMS switch is provided with the bump 9, the height of the conductive coating 6 is not limited in the present embodiment. As an embodiment, the height of the conductive wrap 6 is less than the height of the first contact 2 and the height of the second contact 3. As another possible embodiment, as shown in fig. 4, the height of the conductive wrapping layer 6 is greater than the first height and less than or equal to the second height; the first height is the height of the first contact 2 and the second contact 3, the second height is the sum of the heights of the protrusion 9 and the first contact 2, or the second height is the sum of the heights of the protrusion 9 and the second contact 3.
On the basis of any of the above embodiments, in one embodiment of the present application, the first contact 2 includes a plurality of parallel first contact 2 units, and the second contact 3 includes a plurality of parallel second contact 3 units; when the first contact 2 is contacted with the second contact 3, the first contact 2 unit is contacted with the second contact 3 unit in a one-to-one correspondence manner.
In the present embodiment, the power of the RF MEMS switch can be increased by arranging the first contacts 2 as a plurality of first contact 2 units connected in parallel and the second contacts 3 as a plurality of second contact 3 units connected in parallel.
The present application further provides an electronic device comprising the RF MEMS switch of any of the above embodiments.
In the present specification, the embodiments are described in a progressive manner, and each embodiment focuses on differences from other embodiments, and the same or similar parts between the embodiments are referred to each other.
The RF MEMS switches and electronics provided by the present application are described in detail above. The principle and the embodiment of the present application are explained by applying specific examples, and the above description of the embodiments is only used to help understand the scheme and the core idea of the present application. It should be noted that, for those skilled in the art, without departing from the principle of the present application, the present application can also make several improvements and modifications, and those improvements and modifications also fall into the protection scope of the claims of the present application.
Claims (10)
1. An RF MEMS switch, comprising:
a cantilever beam;
the first contact is arranged at the free end of the cantilever beam;
a second contact disposed opposite the first contact;
the first contact and the second contact are in structural ultra-smooth contact when in contact;
and the driving electrode is used for driving the free end of the cantilever beam to generate displacement so as to enable the first contact and the second contact to be contacted or separated.
2. The RF MEMS switch of claim 1 wherein when at least one of the first contact and the second contact is a contact having a layered structure therein, further comprising:
and the conductive wrapping layer surrounds the contact side surface of the inner laminated structure.
3. The RF MEMS switch of claim 2 further comprising:
a bump connected with the first contact and disposed opposite the second contact, and/or connected with the second contact and disposed opposite the first contact; the surfaces of the protrusions opposite to the first contact and the second contact are atomically smooth surfaces.
4. The RF MEMS switch of claim 3, wherein a surface of the protrusion opposite the first contact and the second contact is an arcuate surface.
5. The RF MEMS switch of claim 3, wherein a surface of the protrusion opposite the first contact and the second contact is planar.
6. The RF MEMS switch of claim 3, wherein the conductive wrap has a height greater than the first height and less than or equal to the second height; the first height is the height of the first contact or the second contact, and the second height is the sum of the heights of the bump and the first contact, or the second height is the sum of the heights of the bump and the second contact.
7. The RF MEMS switch of claim 1 wherein the contact having an interior that is a layered structure is a graphite contact or a multi-layer graphene contact.
8. The RF MEMS switch of claim 1 wherein the actuation electrode comprises a first electrode connected to a lower surface of the cantilever beam and a second electrode disposed opposite the first electrode.
9. The RF MEMS switch of any of claims 1 to 8, wherein the first contact comprises a plurality of first contact units connected in parallel, and the second contact comprises a plurality of second contact units connected in parallel; when the first contact contacts with the second contact, the first contact units contact with the second contact units in a one-to-one correspondence manner.
10. An electronic device, characterized in that it comprises an RF MEMS switch according to any of claims 1 to 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211581481.0A CN115798949A (en) | 2022-12-09 | 2022-12-09 | RF MEMS switch and electronic equipment |
| PCT/CN2022/144036 WO2024119570A1 (en) | 2022-12-09 | 2022-12-30 | Rf mems switch and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211581481.0A CN115798949A (en) | 2022-12-09 | 2022-12-09 | RF MEMS switch and electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115798949A true CN115798949A (en) | 2023-03-14 |
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ID=85418371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211581481.0A Pending CN115798949A (en) | 2022-12-09 | 2022-12-09 | RF MEMS switch and electronic equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115798949A (en) |
| WO (1) | WO2024119570A1 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140202837A1 (en) * | 2010-06-14 | 2014-07-24 | Purdue Research Foundation | Low-cost process-independent rf mems switch |
| CN103177904B (en) * | 2013-03-01 | 2016-06-01 | 清华大学 | A kind of RF MEMS switch and forming method thereof |
| CN109979768B (en) * | 2019-03-26 | 2020-11-17 | 北京清正泰科技术有限公司 | RF MEMS switch based on ultra-smooth structure |
| CN111884644B (en) * | 2020-06-28 | 2024-04-19 | 深圳清华大学研究院 | Parallel RF MEMS switch based on structure ultra-slip |
-
2022
- 2022-12-09 CN CN202211581481.0A patent/CN115798949A/en active Pending
- 2022-12-30 WO PCT/CN2022/144036 patent/WO2024119570A1/en unknown
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| WO2024119570A1 (en) | 2024-06-13 |
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