CN113035650B - High reliability capacitive RF MEMS switch - Google Patents
High reliability capacitive RF MEMS switch Download PDFInfo
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- CN113035650B CN113035650B CN202110570777.1A CN202110570777A CN113035650B CN 113035650 B CN113035650 B CN 113035650B CN 202110570777 A CN202110570777 A CN 202110570777A CN 113035650 B CN113035650 B CN 113035650B
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- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
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Abstract
The invention provides a high-reliability capacitive RF MEMS switch, which comprises a substrate, a driving part arranged in the substrate, a sliding part arranged on the substrate and a transmission part arranged in the substrate, wherein the sliding part is driven by the driving part to move, the transmission part comprises an input part and an output part, and the sliding part moves between the input side and the output side. According to the high-reliability capacitive RF MEMS switch provided by the invention, the traditional cantilever beam type capacitive switch is changed into an in-plane sliding type capacitive switch, the on-off of a radio frequency signal is realized by utilizing the change of the coupling capacitance between the sliding part and the transmission part, the adhesion failure problem caused by adhesion force, impact damage, surface effect and the like is avoided, and the higher service life can be realized. Meanwhile, the horizontal driving mode can realize the spatial decoupling of the driving part and the transmission part, obviously improve the isolation and the operating power of the switch, and solve the problem of crosstalk of the driving part circuit to the signal output of the transmission part.
Description
Technical Field
The invention belongs to the technical field of radio frequency devices, and particularly relates to a high-reliability capacitive RF MEMS switch.
Background
The rf switch is used to switch and route one or more rf signals, including receiving and transmitting, switching between different frequency bands, sharing antennas, etc., and is one of the most commonly used devices in the rf path. The method is widely applied to the fields of radio frequency test instruments, automatic test systems (ATE), radio frequency wireless communication systems (mobile phones and base stations), radar communication systems, satellite communication systems and the like.
Compared with the traditional semiconductor switch, the RF MEMS RF switch has excellent characteristics of high linearity, low loss, high isolation, small volume, and low energy consumption due to the fact that the on/off of the RF signal is controlled by mechanical switching, and thus the RF MEMS RF switch is gradually becoming the mainstream scheme of the future RF switch, and has a potential to become one of the key technologies of advanced electronic equipment in the national defense and civil fields such as the next-generation mobile communication terminal and system, the satellite communication system, and the high-performance phased array radar.
Despite the advantages of RF MEMS switches, a breakthrough in reliability is needed for large-scale applications. The capacitive RF MEMS switch in the prior art generally adopts a two-end or multi-end beam type structure, a beam supporting polar plate is erected above an electrode element, the electrode element can drive a polar plate or a beam to realize vertical movement by utilizing self deflection, a capacitor is formed between the polar plate and the electrode element, and the size of the capacitor is changed along with the movement of the polar plate. However, since most electrode elements need to realize driving and transmission simultaneously, the physical coupling relationship between the electrode elements and the transmission component restricts the isolation degree and the operation power capability of the radio frequency switch device of the capacitive switch, and the polar plate can contact and impact the dielectric layer when moving vertically, thereby causing adhesion and impact damage, and affecting the reliability and the service life of the whole RF MEMS switch.
Chinese patent application publication No. CN105788971A discloses a compact MEMS capacitive radio frequency switch based on a silicon substrate and a method for manufacturing the same, which includes a section of interdigital coplanar waveguide transmission line, a movable plate, a silicon substrate and an insulating medium, wherein the movable plate is above a fixed plate in the interdigital coplanar waveguide transmission line, and the fixed plate is used as a signal line of the interdigital coplanar waveguide transmission line, and the signal line is connected to an external radio frequency circuit; and a bias voltage is arranged between the movable polar plate and the fixed polar plate and used for controlling the on-off of the switch so as to control the on-off of an external radio frequency signal.
In the scheme, the isolation degree is increased by separating the signal line from the bias voltage, but all circuits of the structure are still arranged on the same plane, and at the moment, a certain coupling force still exists between the bias voltage and the movable polar plate.
Therefore, a thorough solution is required to be sought from multiple layers of design, structure, materials and the like to overcome key core technical problems of high reliability, high isolation and the like of the capacitive RF MEMS switch.
Disclosure of Invention
The invention aims to provide a high-reliability capacitive RF MEMS switch, which aims to solve the technical problems of poor reliability, low isolation and low power in the prior art.
In order to achieve the purpose, the invention adopts the technical scheme that: provided is a high-reliability capacitive RF MEMS switch, which comprises a substrate, a driving part arranged in the substrate and a sliding part arranged on the substrate, wherein the sliding part is driven by the driving part to move, and the high-reliability capacitive RF MEMS switch is characterized in that: the transmission component is arranged in the substrate and comprises an input part and an output part, the two sides of the substrate are respectively an input side and an output side, the input part is positioned on the input side, the output part is positioned on the output side, and the sliding component moves between the input side and the output side.
Further, the transmission member further includes a transmission ground located outside the driving member and the sliding member.
Further, the driving component comprises a first driving component and a second driving component, the first driving component is positioned at the input side, the second driving component is positioned at the output side, and the sliding component is driven by the first driving component and the second driving component to move respectively.
Further, the second driving assembly is communicated with the output part.
Further, the length of the input part is greater than that of the first driving assembly, and the length of the output part is greater than that of the second driving assembly.
Further, the first driving assembly and the second driving assembly respectively comprise at least two driving electrodes, the driving electrodes are respectively located on two sides of the input portion or two sides of the output portion, all the driving electrodes of the first driving assembly are connected, and all the driving electrodes of the second driving assembly are connected.
Furthermore, the first driving assembly further comprises first connecting electrodes for connecting all the driving electrodes of the first driving assembly, and the second driving assembly further comprises second connecting electrodes for connecting all the driving electrodes of the second driving assembly.
Further, the first and second connection electrodes extend between the input part and the output part, and the first and second connection electrodes have a width greater than 0.1 μm.
Further, the drive component further comprises a ground electrode located between the first drive assembly and the second drive assembly.
Further, the sliding member includes a capacitive plate, the capacitive plate is located on the substrate, and the capacitive plate is in ultra-smooth contact with the substrate.
Furthermore, the sliding component comprises a capacitor plate and a sliding frame, and the sliding frame is erected on the substrate and drives the capacitor plate to move.
Further, the capacitor plate is made of a metal conductor or a semiconductor material, and the thickness of the capacitor plate is 0.6 to 20 μm.
Further, the gap between the lower surface of the capacitor plate and the upper surface of the substrate is 0.1 μm to 10 μm.
Furthermore, the sliding frame comprises at least four supporting blocks, the supporting blocks are connected with the capacitor plate, and at least one super-slip sheet is padded at the bottom of each supporting block.
Furthermore, a sliding groove is formed in the substrate, the supporting block is located in the sliding groove and slides in the sliding groove, and the bottom surface of the sliding groove is an atomic-level flat surface.
Further, the sliding groove is located inside the transmission ground wire.
Further, an insulating layer is further arranged on the substrate and is located on the driving part and the transmission part.
Further, the thickness of the insulating layer is 20nm to 100 nm.
Furthermore, an extension part is arranged on one side, close to the input part, of the output part, and the extension part is communicated with the output part; or an extension part is arranged on one side, close to the output part, of the input part, and the extension part is communicated with the input part.
The high-reliability capacitive RF MEMS switch provided by the invention has the beneficial effects that:
1. the traditional vertical driving type capacitance switch is changed into an in-plane sliding type capacitance switch, so that decoupling of driving signals and transmission signals can be fundamentally realized, crosstalk between the signals is avoided, operating power is increased, and on-off of radio frequency signals is realized by using change of coupling capacitance between a sliding part and a transmission part. Because no dielectric layer damage exists, the problem of adhesion failure caused by adhesion force, impact damage, surface effect and the like is solved, the capacitive RF MEMS switch based on the ultra-smooth structure can achieve longer service life, meanwhile, the driving part is separated from the transmission part, the driving part is only used for driving the sliding part to move, the transmission part is used for being coupled with the sliding part to change capacitance, the opening and closing control of the RF MEMS switch is achieved, the isolation degree is higher, and the operation power is higher.
2. The driving part and the transmission part are structurally separated, the electric signal in the driving part cannot interfere with the transmission signal to influence the transmission of the radio frequency signal, meanwhile, the driving force of the driving part on the sliding part is increased, the driving voltage is reduced, and the response speed is accelerated.
3. The bi-stable driving structure is formed on the input side and the output side, when no external driving exists, the sliding component can be stabilized at the current position, external force holding force does not need to be applied to enable the position of the sliding component to be stable, energy consumption can be greatly reduced, meanwhile, charge accumulation on the insulating layer is greatly reduced, and the ultra-long service life is achieved.
4. The first driving part and the second driving part are respectively arranged on two sides of the RF MEMS switch, the first driving part and the second driving part respectively drive the sliding part to reciprocate to open and close the switch, the first driving part and the second driving part are arranged around the input part and the output part, the first driving part and the second driving part can be ensured to be always opposite to the transmission part in the movement process, and meanwhile, the first driving part and the second driving part can be ensured to have certain driving force all the time.
5. All be provided with first connecting electrode and second connecting electrode in first drive assembly and second drive assembly, first connecting electrode and second connecting electrode all extend to between input part and the output part, can drive sliding part this moment and keep away from output part or input part more, can strengthen its isolation, and can strengthen great isolation as required, and can not influence the output of its electric capacity.
6. The bottom of the supporting block is padded with the super-slip sheet, the bottom surface of the sliding groove is an atomic-level flat surface, the super-slip sheet is in super-slip contact with the sliding groove, abrasion, low friction and impact-free sliding is realized between the HOPG super-slip sheet and the insulating layer in the switching process, impact damage can be thoroughly avoided, the problem of adhesion failure caused by van der Waals force, surface tension and the like is solved, and the service life of the RF MEMS switch is remarkably prolonged.
7. The extension part is arranged on one side of the output part or the input part, so that the cross section areas of the input part and the output part are not completely equal, when the sliding component is in the middle area, namely in a stable state, the sizes of the capacitors formed by the input part and the output part are not completely the same, the capacitors can be increased, and the insertion loss can be reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of a high-reliability capacitive RF MEMS switch provided in embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of a high-reliability capacitive RF MEMS switch provided in embodiment 2 of the present invention;
fig. 3 is a schematic structural diagram of a high-reliability capacitive RF MEMS switch provided in embodiment 3 of the present invention;
FIG. 4 is a first schematic diagram illustrating a cross-sectional side view of a highly reliable capacitive RF MEMS switch according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a cross-sectional side view of a highly reliable capacitive RF MEMS switch according to an embodiment of the present invention;
fig. 6 is a schematic side cross-sectional structural diagram of a highly reliable capacitive RF MEMS switch according to an embodiment of the present invention;
fig. 7 is a schematic side cross-sectional structural diagram of a highly reliable capacitive RF MEMS switch according to an embodiment of the present invention;
FIG. 8 is a simulated diagram of the upper state capacitance of a highly reliable capacitive RF MEMS switch provided in accordance with an embodiment of the present invention;
FIG. 9 is an insertion loss diagram for a highly reliable capacitive RF MEMS switch provided by an embodiment of the present invention;
fig. 10 is a graph of isolation for a highly reliable capacitive RF MEMS switch provided by an embodiment of the present invention.
Wherein, in the figures, the respective reference numerals:
1. a substrate; 2. a drive member; 3. a transmission member; 4. a sliding member; 11. an input side; 12. an output side; 13. an insulating layer; 14. a sliding groove; 21. a first drive assembly; 22. a second drive assembly; 23. a ground electrode; 211. a first connection electrode; 222. a second connection electrode; 31. an input section; 32. an output section; 33. a transmission ground wire; 34. an extension portion; 41. a capacitive plate; 42. a carriage; 421. a support block; 422. and (4) a super sliding sheet.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated in the drawings that is solely for the purpose of facilitating the description and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and is therefore not to be construed as limiting the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Example 1
Referring to fig. 1 and 4 together, a description will now be given of a highly reliable capacitive RF MEMS switch provided by the present invention. The high-reliability capacitive RF MEMS switch comprises a substrate 1, a driving component 2 arranged inside the substrate 1, a transmission component 3 and a sliding component 4 arranged on the substrate 1, wherein the sliding component 4 is driven by the driving component 2 to realize planar motion on the substrate 1. The driving part 2 and the transferring part 3 are both disposed inside the substrate 1, and the driving part 2 and the transferring part 3 are located at the same height of the substrate 1. Preferably, the driving element 2 and the transmission element 3 are arranged in a staggered manner in a horizontal layout, and the driving element and the transmission element cannot overlap with each other so as not to affect driving or capacitive coupling.
The input side 11 and the output side 12 are respectively arranged on two sides of the substrate 1, the transmission ground lines 33 are arranged on the other two sides, and the transmission ground lines 33 surround the outer side of the driving component 2 and can be matched with the input part 31 and the output part 32 to realize capacitive coupling output.
The substrate 1 is generally made of high-resistance silicon, silicon oxide, silicon nitride or other materials, the driving part 2 and the transmission part 3 are metal conductive elements embedded inside the substrate 1 or located above or below the substrate 1, the driving part 2 is connected with an external circuit, and the transmission part 3 is used for conducting radio frequency signals and forms a series capacitor with the capacitor plate 41.
Compared with the prior art, the high-reliability capacitive RF MEMS switch provided by the invention has the advantages that the horizontal layout structure can fundamentally decouple the driving part 2 and the transmission part 3, the driving part 2 and the transmission part 3 are separated, the driving part 2 is only used for driving the sliding part 4 to move, the opening and closing control of the RF MEMS switch is realized through the change of the coupling capacitance between the transmission part 3 and the capacitance plate 41, the isolation degree is higher, the operation power is higher, and meanwhile, the in-plane abrasion-free ultra-sliding can realize almost infinite operation life.
Further, as a specific embodiment of the highly reliable capacitive RF MEMS switch provided by the present invention, the transmission component 3 includes an input portion 31 and an output portion 32, the input portion 31 is located on the input side 11, the output portion 32 is located on the output side 12, and the sliding component 4 is capable of moving between the input side 11 and the output side 12 under the driving of the driving component 2. The driving member 2 comprises a first driving assembly 21 and a second driving assembly 22, wherein the first driving assembly 21 is located at the input side 11, the second driving assembly 22 is located at the output side 12, that is, the first driving assembly 21 is arranged at any side or two opposite sides of the input portion 31, and the second driving assembly 22 is arranged at any side or two opposite sides of the output portion 32.
Preferably, the length of the input portion 31 is greater than that of the first driving assembly 21, and one end of the first driving assembly 21 close to the output portion 32 is flush with the input portion 31 or protrudes from the input portion 31; the length of the output part 32 is greater than that of the second driving assembly 22, and one end of the second driving assembly 22 close to the input part 31 is flush with the output part 32 or protrudes out of the output part 32. In this case, it can be ensured that the first drive assembly 21 and the second drive assembly 22 can be energized in cooperation to realize the reciprocating motion of the sliding member 4. Of course, in other embodiments, the length of the input portion 31 may also be less than or equal to the length of the first driving assembly 21.
Further, as a specific embodiment of the highly reliable capacitive RF MEMS switch provided by the present invention, each of the first driving assembly 21 and the second driving assembly 22 includes at least two separate driving electrodes, and the driving electrodes are disposed around the input portion 31 or the output portion 32, and the two driving electrodes are respectively located at two sides of the input portion 31 or two sides of the output portion 32, and can drive the sliding component 4 to move above the input portion 31 or the output portion 32.
All the driving electrodes of the first driving assembly 21 are connected, preferably, all the driving electrodes are connected through the first connecting electrode 211, the first connecting electrode 211 can extend to a position between the input portion 31 and the output portion 32, and simultaneously, the driving electrodes on two sides of the input portion 31 are connected, the arrangement of the first connecting electrode 211 can prolong the maximum driving distance of the sliding component 4, and the sliding component 4 can be driven to be not opposite to the input portion 31 when needed, so that a better isolation effect is achieved.
All the driving electrodes of the second driving assembly 22 are also connected to each other, and the connection between all the driving electrodes is realized through the second connecting electrode 222, and the second connecting electrode is matched with the first connecting electrode 211, so that a better isolation effect is realized.
Preferably, the first connection electrode 211 and the second connection electrode 222 have a certain line width, and the first connection electrode 211 and the second connection electrode 222 are matched with other driving electrodes to achieve the effect of pushing the sliding member 4 to move, so that the line width thereof needs to be greater than 0.2 μm, or the driving voltage needs to be increased.
The driving part 2 further comprises a grounding electrode 23, the grounding electrode 23 is positioned between the first driving component 21 and the second driving component 22, and the grounding electrode 23 is communicated with the first driving component 21 or the second driving component 22, so that the two sides of the sliding part 4 are biased to drive the sliding part 4 to move.
Further, referring to fig. 1 and 4, as a specific embodiment of the high-reliability capacitive RF MEMS switch provided by the present invention, the sliding component 4 includes a capacitive plate 41 and a sliding frame 42, the sliding frame 42 is erected on the substrate 1 and drives the capacitive plate 41 to move, and a lower surface of the capacitive plate 41 does not contact the substrate 1, so that friction between the capacitive plate 41 and the substrate 1 can be avoided. At least one superclipping piece 422 can be arranged below the capacitor plate 41 in a cushioning mode, so that the superclipping piece 422 is in contact with the substrate 1, the capacitor plate 41 can slide on the substrate 1 in a zero-abrasion mode, and extremely-low-friction and abrasion-free sliding can be achieved. Meanwhile, the bistable attraction can greatly reduce the charge accumulation on the insulating layer 13, greatly reduce the energy consumption and realize the ultra-long service life.
Preferably, the sliding frame 42 includes at least four supporting blocks 421, the supporting blocks 421 are connected to the capacitor plate 41, and the supporting blocks 421 are respectively disposed at the bottom of the capacitor plate 41 and can support the entire capacitor plate 41 after being combined, so that a certain gap is formed between the capacitor plate 41 and the substrate 1, and the capacitor plate 41 is prevented from directly contacting the substrate 1. Preferably, the supporting blocks 421 are respectively disposed at four sides or corners of the capacitor plate 41.
Further, referring to fig. 1 and 5, a sliding groove 14 is formed in the substrate 1, the supporting block 421 is located in the sliding groove 14 and slides in the sliding groove 14, at this time, the bottom surface of the sliding groove 14 is an atomic-level flat surface, the ultra-slide sheet 422 at the bottom of the supporting block 421 is in ultra-slide contact with the bottom surface of the sliding groove 14, and the moving direction of the sliding member 4 is limited by electrostatic energy to prevent the sliding member 4 from deflecting.
Preferably, the sliding groove 14 provided on the substrate 1 is generally disposed inside the transmission ground line 33, so that the transmission ground line 22 is prevented from being capacitively coupled to the capacitor plate 41, thereby affecting the switch insertion loss.
Preferably, the capacitor plate 41 is made of a metal material, and the metal material may be a material with good conductivity and light weight, such as aluminum, copper, nickel or other alloys; the capacitor plate 41 can also be made of a whole light graphite sheet or an ultra-smooth sheet of light semiconductor material made of other materials. The thickness of the capacitor plate 41 is 0.1 μm to 50 μm, and the gap between the capacitor plate 41 and the substrate 1 is 0.05 μm to 8 μm.
Further, referring to fig. 1, fig. 4 and fig. 5, as a specific embodiment of the high-reliability capacitive RF MEMS switch provided by the present invention, an insulating layer 13 is further disposed on the substrate 1, the insulating layer 13 is disposed on the driving component 2 and the transmission component 3, and the insulating layer 13 is disposed to prevent the driving component 2 and the transmission component 3 from directly contacting the capacitive plate 41. Preferably, the insulating layer 13 is coated just above the driving member 2 and the transmission member 3, the insulating layer 13 is not arranged inside the sliding groove 14, and the inner surface of the sliding groove 14 is an atomically flat surface; alternatively, the inside of the sliding groove 14 is also filled with an insulating layer 13, and the insulating layer 13 satisfies atomic level flatness in this region.
At this time, the sliding groove 14 may not be formed, and the ultra-smooth sheet 422 at the bottom of the supporting block 421 and the insulating layer 13 are in direct ultra-smooth contact. Preferably, the thickness of the insulating layer 13 is 10nm to 80nm, and the thickness of the insulating layer 13 is small, so that an excessively large gap between the transmission member 3 and the capacitor plate 41 can be avoided, thereby weakening the driving force and affecting the reaction speed.
In other embodiments of the present invention, the sliding component 4 of the capacitive RF MEMS switch may further include only the capacitive plate 41, the lower surface of the capacitive plate 41 has a super-smooth surface, and the upper surface of the substrate 1 is an atomically flat surface, in which case the capacitive plate 41 is directly disposed on the substrate 1, and the capacitive plate 41 and the substrate 1 are in super-smooth contact and slide, without disposing the sliding frame 42.
Preferably, when the carriage 42 is not provided, the size of the capacitive plate 41 is generally in the micrometer range, but of course, the size of the capacitive plate 41 may be in the millimeter or centimeter range according to actual conditions and specific requirements. The upper surface of the substrate 1 is provided with an insulating layer 13, and the insulating layer 13 can prevent the transmission member 3 from contacting the capacitor plate 41, and can form a gap of a capacitor between the transmission member 3 and the capacitor plate 41.
For the radio frequency switch, the isolation and the insertion loss are two most important indexes for determining the radio frequency switch, and the capacitance (C) of an upper stateup) And capacitance ratio (C)down/Cup) Is a main limiting factor affecting the above characteristics, and the capacitance between the input portion 31 and the capacitor plate 41 is C1The capacitance between the output part 32 and the capacitor plate 41 is C2(ii) a For capacitive RF MEMS switches, which require open, CpApproaching 0, conducting CpA skin counting method is adopted;
capacitor C1Comprises the following steps:
capacitor C2Comprises the following steps:
total capacitance C of driving systempComprises the following steps:
total electrostatic energy of the drive system:
horizontal direction driving force Fx：
Wherein epsilon0Is a vacuum dielectric constant;
εris the relative dielectric constant of the dielectric layer;
g is the thickness of the insulating layer 13;
x is a displacement;
Wais the width of the ground electrode 23;
Wbis the width of the drive electrode;
a is the length of the ground electrode 23;
v is a driving voltage.
As can be seen from the equation, the horizontal driving force gradually decreases with the displacement x, and decreases at a quadratic velocity. When x =0, i.e. the initial position, the horizontal driving force has a maximum value
And the initial maximum is defined by the air gap g and the drive electrode length WbAnd the driving voltage V. I.e., the smaller the air gap g, the drive electrode width WbThe larger the initial driving force.
Wherein the content of the first and second substances,
in terms of design size, an upper state capacitance simulation diagram is shown in fig. 8, an insertion loss diagram is shown in fig. 9, an isolation diagram is shown in fig. 10, the high-reliability capacitive RF MEMS switch has excellent radio frequency characteristics, the upper state capacitance is 2.5fF at the minimum, and the lower/upper state capacitance ratio is up to 235, unlike a conventional vertical driving structure, signal switching is realized by sliding the sliding member 4, and when a direct current bias is applied between the grounding electrode 23 and the driving electrode, the sliding member 4 slides to coincide with the transmission member 3 under the action of a horizontal electrostatic force, so that the change of the coupling capacitance between the sliding member 4 and the transmission member 3 is controlled, and the on-off of a radio frequency signal is realized. Because there is not unsettled structure, and do not have wearing and tearing, low friction, no impact slip between sliding part 4 and insulating layer 13 in the switching process, can thoroughly avoid the impact damage, bistable state drive mode can greatly reduce insulating layer charge accumulation simultaneously, is showing the operating life who improves RF MEMS switch.
As an alternative embodiment of the invention, in other embodiments of the invention, the drive members 2 and the transport members 3 are located at different heights of the substrate 1, and the transport members 3 are located above the drive members 2, and the drive members 2 and the transport members 3 are staggered in a horizontal layout, with no overlapping portions or only few staggered portions.
As an alternative embodiment of the present invention, in another embodiment of the present invention, referring to fig. 6, a separate sliding groove 14 may not be provided, and the bottom of the supporting block 421 may directly abut against the upper surface of the substrate 1 or the upper surface of the insulating layer 13, where the upper surface of the substrate 1 is an atomically flat surface, and the ultra-smooth sheet 422 at the bottom of the supporting block 421 makes ultra-smooth contact with the substrate 1.
As an alternative embodiment of the present invention, in another embodiment of the present invention, referring to fig. 6, the insulating layer 13 may not be provided, the driving part 2 and the transmission part 3 are both embedded inside the substrate 1 or are disposed below the substrate 1, the upper surface of the entire substrate 1 satisfies atomic level flatness, and at this time, the sliding part 4 directly slides on the surface of the substrate 1.
As an alternative embodiment of the present invention, referring to fig. 7, in another embodiment of the present invention, the sliding component 4 of the capacitive RF MEMS switch may further include only the capacitive plate 41, the lower surface of the capacitive plate 41 has an ultra-smooth surface, the upper surface of the substrate 1 is an atomically flat surface, and then the capacitive plate 41 is directly disposed on the substrate 1 or the insulating layer 13, and the capacitive plate 41 and the substrate 1 or the insulating layer 13 ultra-slidably contact and slide without disposing the sliding frame 42.
Preferably, the size of the capacitor plate 41 is generally micrometer, and of course, the size of the capacitor plate 41 may be millimeter or centimeter according to actual conditions and specific requirements. The upper surface of the substrate 1 is provided with an insulating layer 13, and the insulating layer 13 can prevent the transmission member 3 from contacting the capacitor plate 41, and can form a gap of a capacitor between the transmission member 3 and the capacitor plate 41.
Example 2
Referring to fig. 2, as another embodiment of the high-reliability capacitive RF MEMS switch provided in the present invention, the difference between the present embodiment and embodiment 1 is: the second driving assembly 22 is conducted with the output portion 32, the first driving assembly 21 is separated from the input portion 31, and at the moment, the second driving assembly 22 and the output portion 32 are the same component, so that simultaneous processing can be realized, the structure is simpler, and the process difficulty is lower. Meanwhile, the areas of the first driving component 21 and the second driving component 22 are different, so that the coupling capacitance is increased, the operating frequency range of the RF MEMS switch is widened, and the insertion loss is reduced.
Example 3
Referring to fig. 3, as another specific implementation of the high-reliability capacitive RF MEMS switch provided in the present invention, the difference between this embodiment and embodiment 1 is: an extension part 34 is arranged on one side of the output part 32 close to the input part 31, and the extension part 34 is communicated with the output part 32; alternatively, an extension portion 34 is disposed on a side of the input portion 31 close to the output portion 32, and the extension portion 34 is communicated with the input portion 31. The extension portion 34 is provided on the output portion 32 or one side of the input portion 31, so that the cross-sectional areas of the input portion 31 and the output portion 32 are not completely equal, and when the sliding member 4 is in the middle region, that is, in the steady state, the sizes of the capacitances formed by the input portion 31 and the output portion 32 are not completely the same, and thus the transmission capacitance can be increased, and the insertion loss can be reduced.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (19)
1. High-reliability capacitive RF MEMS switch, comprising a substrate (1), a driving part (2) arranged inside the substrate (1) and a sliding part (4) arranged on the substrate (1), the sliding part (4) being driven by the driving part (2) to move, characterized in that: still include transmission part (3), transmission part (3) are located in base (1), transmission part (3) include input portion (31) and output (32), the both sides of base (1) are input side (11) and output side (12) respectively, input portion (31) are located input side (11), output (32) are located output side (12), sliding part (4) move between input side (11) and output side (12), and drive component (2) are only used for driving the motion of sliding part (4), through transmission part (3) with coupling capacitance changes between sliding part (4), realize opening and shutting control.
2. The high reliability capacitive RF MEMS switch of claim 1 wherein: the transmission member (3) further comprises a transmission ground (33), and the transmission ground (33) is located outside the drive member (2) and the slide member (4).
3. The high reliability capacitive RF MEMS switch of claim 1 wherein: the driving component (2) comprises a first driving assembly (21) and a second driving assembly (22), the first driving assembly (21) is located on the input side (11), the second driving assembly (22) is located on the output side (12), and the sliding component (4) is driven to move by the first driving assembly (21) and the second driving assembly (22) respectively.
4. The high reliability capacitive RF MEMS switch of claim 3 wherein: the second drive assembly (22) is in communication with the output (32).
5. The high reliability capacitive RF MEMS switch of claim 3 wherein: the length of the input part (31) is greater than that of the first drive assembly (21), and the length of the output part (32) is greater than that of the second drive assembly (22).
6. The high reliability capacitive RF MEMS switch of claim 3 wherein: the first driving assembly (21) and the second driving assembly (22) respectively comprise at least two driving electrodes, the driving electrodes are respectively positioned on two sides of the input portion (31) or two sides of the output portion (32), all the driving electrodes of the first driving assembly (21) are connected, and all the driving electrodes of the second driving assembly (22) are connected.
7. The high reliability capacitive RF MEMS switch of claim 6 wherein: the first driving assembly (21) further comprises a first connecting electrode (211) for connecting all the driving electrodes of the first driving assembly (21), and the second driving assembly (22) further comprises a second connecting electrode (222) for connecting all the driving electrodes of the second driving assembly (22).
8. The high reliability capacitive RF MEMS switch of claim 7 wherein: the first connection electrode (211) and the second connection electrode (222) extend between the input portion (31) and the output portion (32), and the width of the first connection electrode (211) and the second connection electrode (222) is greater than 0.1 [ mu ] m.
9. The high reliability capacitive RF MEMS switch of claim 3 wherein: the drive component (2) further comprises a ground electrode (23), the ground electrode (23) being located between the first drive assembly (21) and the second drive assembly (22).
10. The high reliability capacitive RF MEMS switch of claim 2 wherein: the sliding part (4) comprises a capacitor plate (41), the capacitor plate (41) is positioned on the substrate (1), and the capacitor plate (41) is in ultra-smooth contact with the substrate (1).
11. The high reliability capacitive RF MEMS switch of claim 2 wherein: the sliding component (4) comprises a capacitance plate (41) and a sliding frame (42), and the sliding frame (42) is erected on the substrate (1) and drives the capacitance plate (41) to move.
12. The high reliability capacitive RF MEMS switch of claim 11 wherein: the capacitor plate (41) is made of a metal conductor or a semiconductor material, and the thickness of the capacitor plate (41) is 0.6-20 μm.
13. The high reliability capacitive RF MEMS switch of claim 11 wherein: the gap between the lower surface of the capacitor plate (41) and the upper surface of the substrate (1) is 0.1-10 μm.
14. The high reliability capacitive RF MEMS switch of claim 11 wherein: the sliding frame (42) comprises at least four supporting blocks (421), the supporting blocks (421) are connected with the capacitance plate (41), and at least one super-slip sheet (422) is padded at the bottom of each supporting block (421).
15. The high reliability capacitive RF MEMS switch of claim 14 wherein: the substrate (1) is provided with a sliding groove (14), the supporting block (421) is positioned in the sliding groove (14) and slides in the sliding groove (14), and the bottom surface of the sliding groove (14) is an atomic-level flat surface.
16. The high reliability capacitive RF MEMS switch of claim 15 wherein: the sliding groove (14) is located inside the transmission ground (33).
17. The high reliability capacitive RF MEMS switch of any of claims 1 to 16, wherein: an insulating layer (13) is further arranged on the substrate (1), and the insulating layer (13) is located on the driving part (2) and the transmission part (3).
18. The high reliability capacitive RF MEMS switch of claim 17 wherein: the thickness of the insulating layer (13) is 20nm to 100 nm.
19. The high reliability capacitive RF MEMS switch of any of claims 1 to 16, wherein: an extension part (34) is arranged on one side, close to the input part (31), of the output part (32), and the extension part (34) is communicated with the output part (32); or an extension part (34) is arranged on one side, close to the output part (32), of the input part (31), and the extension part (34) is communicated with the input part (31).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110570777.1A CN113035650B (en) | 2021-05-25 | 2021-05-25 | High reliability capacitive RF MEMS switch |
| PCT/CN2021/118203 WO2022247064A1 (en) | 2021-05-25 | 2021-09-14 | High-reliability capacitive rf mems switch |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110570777.1A CN113035650B (en) | 2021-05-25 | 2021-05-25 | High reliability capacitive RF MEMS switch |
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| CN113035650B true CN113035650B (en) | 2021-09-07 |
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| WO2022247064A1 (en) | 2022-12-01 |
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