CN115776763A - Balanced type amplitude limiting field amplifier of thick-film circuit substrate - Google Patents
Balanced type amplitude limiting field amplifier of thick-film circuit substrate Download PDFInfo
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- CN115776763A CN115776763A CN202310103056.9A CN202310103056A CN115776763A CN 115776763 A CN115776763 A CN 115776763A CN 202310103056 A CN202310103056 A CN 202310103056A CN 115776763 A CN115776763 A CN 115776763A
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Abstract
The application provides a thick film circuit substrate balanced type amplitude limiting field is put, includes: and sequentially laminating the first substrate, the second substrate, the third substrate, the fourth substrate and the fifth substrate from top to bottom, and finally firing to form the integrated multilayer circuit board. The top surface of the first substrate is formed with a first metal layer by a thin film process, and the first metal layer is used for processing an electric bridge, a radio frequency circuit and placing components. The second metal layer is formed on the top surface of the second substrate and used for processing the radio frequency signal grounding layer. And a third metal layer is formed on the top surface of the third substrate and is used for processing low-frequency feed circuits such as a working state control line, a power supply control line and the like. And a fourth metal layer is formed on the top surface of the fourth substrate and used for processing the common grounding plate. And a fifth metal layer is formed on the top surface of the fifth substrate and used for processing the radio-frequency signal transmission line. And a sixth metal layer is formed on the bottom surface of the fifth substrate and used for processing the common grounding plate. The number of wiring layers can be effectively reduced, and the product volume is further reduced.
Description
Technical Field
The invention belongs to the technical field of microwave communication, and particularly relates to a balanced amplitude limiting field amplifier of a thick-film circuit substrate.
Background
The amplitude limiting field amplifier is a key device at the front end of the radar receiving, the amplitude limiter can attenuate and protect a rear-stage power sensitive device for signals in high power, and low insertion loss passes in small signals. With the development of microwave devices toward miniaturization and high integration. The requirements for integration and miniaturization of the limited field amplifier are increasing.
The balanced amplitude limiting field amplifier is as follows: and a 90-degree electric bridge is used at the input end of the amplitude limiting field amplifier to carry out power division on input power, an amplitude limiter and a low-noise amplifier circuit are respectively designed on two branches after power division, and then the 90-degree electric bridge is used for synthesizing signals after low-noise amplification. In the balanced type amplitude limiting field amplification, in order to meet the requirements of high integration level and miniaturization, a lange bridge can be selected for design, the lange bridge has high requirements on circuit processing precision, and a thin film process is required for circuit processing; there are other rf circuits in the limited field amplifier, as well as a large amount of low frequency power.
The prior art realizes the wiring of the radio frequency and the low frequency, and the volume of the product is large in order to meet the electromagnetic compatibility of the product. The traditional design mode only uses a single process to process the printed board, and cannot achieve both the processing precision and the multilayer wiring. This makes the integration and miniaturization of balanced limited field amplifiers less than optimal.
The traditional circuit board only adopts a thick film process or a thin film process to design a printed board. Although a multilayer circuit can be designed by adopting a thick film process, the direct processing of the land bridge cannot be realized, and the land bridge printed board is sintered on the thick film printed board after the single land bridge printed board is processed by using a thin film process, so that the process is complex and the height difference exists; when the thin film process design is adopted, although the lange bridge and the radio frequency transmission line with higher precision can be processed, multilayer circuit wiring cannot be realized, working state control lines, power lines and the like need to be arranged on the same plane, and the circuit area is still large after the circuit is tiled in consideration of the problems of high-low frequency signal crosstalk and the like. Therefore, the traditional design mode cannot meet the requirement of miniaturization of the limiting field amplifier.
Disclosure of Invention
In order to solve the defects of the prior art, the invention provides a balanced type amplitude limiting field amplifier of a thick-film circuit substrate, a thick-film process and a thin-film process are simultaneously used on a printed board to form a multilayer circuit, the number of wiring layers can be effectively reduced, and the product volume is further reduced.
In order to realize the purpose of the invention, the following scheme is adopted:
a balanced amplitude limiting field amplifier for a thick film circuit substrate comprises: the first substrate, the second substrate, the third substrate, the fourth substrate and the fifth substrate are sequentially overlapped from top to bottom.
The top surface of the first substrate is provided with a first metal layer by adopting a thin film process, and the first metal layer is provided with a first bridge, a second bridge, a radio frequency circuit and a placing component.
The top surface of the second substrate is provided with a second metal layer prepared by adopting a thick film process, and the second metal layer is provided with a radio frequency signal grounding layer.
And a third metal layer is prepared on the top surface of the third substrate by adopting a thick film process, and is provided with a low-frequency feed circuit, wherein the low-frequency feed circuit comprises a working state control line, a power supply control line and the like.
And a fourth metal layer is prepared on the top surface of the fourth substrate by adopting a thick film process, and the fourth metal layer is provided with a common grounding plate.
And a fifth metal layer is prepared on the top surface of the fifth substrate by adopting a thick film process and provided with a radio frequency signal transmission line.
And a sixth metal layer is prepared on the bottom surface of the fifth substrate by adopting a thick film process, and the sixth metal layer is provided with a public grounding plate.
Furthermore, the first substrate, the second substrate, the third substrate, the fourth substrate and the fifth substrate are all made of ceramics.
Furthermore, the power supply control lines of the first metal layer and the third metal layer are connected through the metal via holes.
Furthermore, the transmission line of the grounding circuit part in the first metal layer is connected with the radio frequency signal transmission line of the fifth metal layer through a metal via hole.
Further, the radio frequency signal ground layer of the second metal layer, the fourth metal layer common ground plate, the fifth metal layer common ground plate and the sixth metal layer common ground plate in the first metal layer are all connected through connection.
Furthermore, the fifth metal layer is used for transmitting the radio frequency transmission signal subjected to the amplitude limiting field amplification.
The invention has the beneficial effects that:
1. the circuit on the first metal layer is designed by adopting a thin film process, the processing of the lange bridge can be realized, the size of the circuit is greatly reduced, and compared with the traditional branch line bridge, the size of the lange bridge can be reduced by more than 60%. The first metal layer adopts a thin film process to design the radio frequency circuit, the circuit precision is high, and the electrical performance index and batch consistency of the circuit are superior to those of a thick film circuit. The first metal layer adopts a film process to design the radio frequency circuit, the circuit precision is high, the circuit edge is neat, burrs are few, the ground discharge condition of a product under high power can be reduced, and the power bearing capacity of the amplitude limiter is improved.
2. The low-frequency circuit with low requirement on thick film process design precision and the simple radio frequency transmission line are adopted, the processing of a multilayer circuit can be realized, and the circuit size is greatly reduced. The multilayer circuit is designed by adopting a thick film process, and the radio frequency circuit and the low frequency circuit are isolated by adopting a stratum, so that the problem of crosstalk between high and low frequencies of a product can be solved, and the electromagnetic compatibility of the product is improved.
Drawings
The drawings described herein are for illustrative purposes only of selected embodiments and not all possible implementations, and are not intended to limit the scope of the present disclosure.
Fig. 1 shows a schematic diagram of the present application.
Fig. 2 shows a functional block diagram of the present application.
The labels in the figure are: the structure comprises a first substrate-1, a first metal layer-11, a second substrate-2, a second metal layer-21, a third substrate-3, a third metal layer-31, a fourth substrate-4, a fourth metal layer-41, a fifth substrate-5, a fifth metal layer-51 and a sixth metal layer-52.
Detailed description of the preferred embodiments
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings, but the described embodiments of the present invention are a part of the embodiments of the present invention, not all of the embodiments of the present invention.
As shown in fig. 1, a balanced type amplitude limiting field amplifier for a thick film circuit substrate includes: the first substrate 1, the second substrate 2, the third substrate 3, the fourth substrate 4 and the fifth substrate 5 are sequentially stacked from top to bottom, and finally fired to form the integrated multilayer circuit board.
The top surface of the first substrate 1 is provided with a first metal layer 11 by adopting a thin film process, the first metal layer 11 is used for processing a first bridge, a second bridge, a radio frequency circuit, a limiter and placing components such as a Schottky diode, a PIN diode, a chip capacitor, a low noise amplifier and the like, and meanwhile, the first metal layer 11 is also provided with a grounding circuit.
The top surface of the second substrate 2 is prepared with a second metal layer 21 by a thick film process, and the second metal layer 21 is used for processing a radio frequency signal ground layer, a radio frequency signal ground layer on the top layer and isolating the radio frequency signal on the top layer.
The top surface of the third substrate 3 is prepared with a third metal layer 31 by a thick film process, and the third metal layer 31 is used for processing low-frequency feed circuits such as a working state control line, a power supply control line, a bias circuit and the like.
The top surface of the fourth substrate 4 is prepared with a fourth metal layer 41 by a thick film process, and the fourth metal layer 41 is used for processing a common ground plate, serving as an intermediate radio frequency signal ground and isolating the radio frequency signal of the intermediate layer.
The fifth substrate 5 is provided with a fifth metal layer 51 on the top surface thereof by a thick film process, and the fifth metal layer 51 is used for processing the radio frequency signal transmission line.
The sixth metal layer 52 is prepared on the bottom surface of the fifth substrate 5 by a thick film process, and the sixth metal layer 52 is used for processing a common grounding plate and is used as a middle-layer radio-frequency signal ground and a grounding surface of the whole multilayer plate.
The thick film process is to transfer materials such as conductor paste and dielectric paste onto a ceramic substrate by a screen printing method, and to form a firmly adhered film on the ceramic substrate after high-temperature firing. The multilayer ceramic substrate has different sintering temperatures and different metal slurries, and the low-temperature multilayer ceramic substrate has lower sintering temperature and can be made into thick gold by using printing gold slurry on the surface; because the high-temperature multilayer ceramic substrate is different in slurry selection, the surface coating of the multilayer ceramic substrate needs to be thickened in a coating mode. The film process is to sputter/evaporate a layer of metal film on the substrate, thicken the metal film by electroplating, and etch the metal film to form the required circuit pattern.
The power control lines of the first metal layer 11 and the third metal layer 31 are connected through a metal via hole, and are used for transmitting the direct current bias of the limiter diode and the direct current control signal of the low-noise amplifier chip through the third metal layer 31, so that the volume of the product is reduced.
Part of the transmission lines in the first metal layer 11 are connected with the radio frequency signal transmission lines of the fifth metal layer 51 through metal via holes, and the radio frequency transmission circuits without devices in amplitude limiting field amplification are transmitted through the radio frequency signal transmission lines of the 9 th layer, so that the volume of a product can be reduced.
The ground circuit in the first metal layer 11, the radio frequency signal ground layer of the second metal layer 21, the fourth metal layer 41 common ground plate, the fifth metal layer 51 common ground plate and the sixth metal layer 52 common ground plate are all connected through a metal via hole; the ground layers are connected with each other through the metal through holes, the low-frequency part of the product and the radio-frequency part are grounded, the ground capacity is improved by increasing the number of the metal through holes as much as possible, the crosstalk between the radio frequency and the low frequency of the product is ensured, and conditions are provided for multilayer wiring; through the connection of the metal via holes, the power supply to the radio frequency circuit can be well realized, the isolation of the radio frequency signal and the low frequency signal is controlled by adopting a stratum, and the electromagnetic compatibility of a product can also be well met.
The fifth metal layer 51 is configured to transmit the rf transmission signals subjected to the amplitude limiting field amplification, including the rf transmission signals of the amplitude limiting field amplification itself and other rf transmission signals except the amplitude limiting field amplification.
Preferably, the first substrate 1, the second substrate 2, the third substrate 3, the fourth substrate 4, and the fifth substrate 5 are made of ceramic. Because of having very high insulation resistance, form good electric isolation to each layer.
The first metal layer 11 is formed by a thin film process, and the second metal layer 21, the third metal layer 31, the fourth metal layer 41, the fifth metal layer 51, and the sixth metal layer 52 are formed by a thick film process. The printed board first metal layer 11 circuit is designed as a thin film circuit, and a circuit with high processing precision requirement, such as a lange bridge, a radio frequency circuit and the like, is placed on the top layer circuit. Circuits with low processing precision requirements in the circuits, such as low-frequency control lines and partial radio frequency transmission lines, are designed by adopting thick film circuits, and multilayer wiring is realized. The printed board designed in this way can place a circuit with high processing precision requirement on the top layer, place other radio frequency signals and low-frequency control signals with low precision requirement on the middle layer, and place the bottom layer to be grounded. The requirements on the circuit processing precision of the product and the miniaturization of the product are met, and the electromagnetic compatibility and the like are guaranteed.
In circuit design, if the circuits between layers need to be connected, the circuits can be vertically interconnected in a metal via hole mode. This approach may enable interconnection of circuitry between any number of layers. The power supply and control of the radio frequency circuit can be well realized, the stratum is adopted to isolate the radio frequency signal and the low frequency signal, and the electromagnetic compatibility of the product can be well met. In the circuit, a first layer of circuit is processed by adopting a thin film process, and each metallization layer in the middle is designed by adopting a thick film process.
As shown in fig. 1 and 2, in operation, a radio frequency signal enters the device through the radio frequency input terminal and is equally distributed to two branches through the first bridge on the first metal layer 11. If the input power is a small signal, the amplitude limiter is in a low-loss state, the radio-frequency signal enters a low-noise amplifier after passing through the amplitude limiter, is amplified by the low-noise amplifier and then is synthesized and output by the second electric bridge. If the input power reaches a level that can damage the low noise amplifier, the amplitude limiter works in a reflection state to reflect the radio frequency power, and the reflected radio frequency signal passes through the first electric bridge. Due to phase reasons, signals reflected by the two paths of amplitude limiters are absorbed by a power load after being synthesized by the first electric bridge; when the input radio frequency signal is higher and exceeds the bearing power limit of the first electric bridge, the first electric bridge can be burnt out, and the product is irreversibly damaged.
The foregoing is only a preferred embodiment of the present invention and is not intended to be exhaustive or to limit the invention. It will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the scope of the invention.
Claims (6)
1. A balanced amplitude limiting field amplifier for a thick-film circuit substrate is characterized by comprising: a first substrate (1), a second substrate (2), a third substrate (3), a fourth substrate (4) and a fifth substrate (5) which are sequentially overlapped from top to bottom;
a first metal layer (11) is prepared on the top surface of the first substrate (1) by adopting a thin film process, and a first bridge, a second bridge, a radio frequency circuit and components are arranged on the first metal layer (11);
a second metal layer (21) is prepared on the top surface of the second substrate (2) by adopting a thick film process, and the second metal layer (21) is provided with a radio frequency signal grounding layer;
a third metal layer (31) is prepared on the top surface of the third substrate (3) by adopting a thick film process, and the third metal layer (31) is provided with a low-frequency feed circuit;
a fourth metal layer (41) is prepared on the top surface of the fourth substrate (4) by adopting a thick film process, and a public grounding plate is arranged on the fourth metal layer (41);
a fifth metal layer (51) is prepared on the top surface of the fifth substrate (5) by adopting a thick film process, and the fifth metal layer (51) is provided with a radio frequency signal transmission line;
and a sixth metal layer (52) is prepared on the bottom surface of the fifth substrate (5) by adopting a thick film process, and the sixth metal layer (52) is provided with a common grounding plate.
2. The balanced type amplitude-limiting field amplifier of the thick-film circuit substrate as claimed in claim 1, wherein the first substrate (1), the second substrate (2), the third substrate (3), the fourth substrate (4) and the fifth substrate (5) are made of ceramics.
3. The balanced type amplitude-limiting field discharge circuit board of claim 1, wherein the power control lines of the first metal layer (11) and the third metal layer (31) are connected through metal vias.
4. The balanced type amplitude-limiting field discharge of the thick film circuit substrate as set forth in claim 1, wherein a portion of the transmission line in the first metal layer (11) is connected to the rf signal transmission line in the fifth metal layer (51) through a metal via.
5. The balanced type amplitude-limiting field discharge of the thick-film circuit substrate according to claim 1, wherein the ground circuit in the first metal layer (11), the rf signal ground layer in the second metal layer (21), the commoned ground plane in the fourth metal layer (41), the commoned ground plane in the fifth metal layer (51), and the commoned ground plane in the sixth metal layer (52) are all connected through metal vias.
6. The balanced type amplitude-limiting field amplifier of the thick-film circuit substrate as claimed in claim 1, wherein the fifth metal layer (51) is used for transmitting radio frequency transmission signals passing through the amplitude-limiting field amplifier.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310103056.9A CN115776763B (en) | 2023-02-13 | 2023-02-13 | Balanced type amplitude limiting field amplifier for thick film circuit substrate |
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| CN202310103056.9A CN115776763B (en) | 2023-02-13 | 2023-02-13 | Balanced type amplitude limiting field amplifier for thick film circuit substrate |
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| CN115776763A true CN115776763A (en) | 2023-03-10 |
| CN115776763B CN115776763B (en) | 2023-05-05 |
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| CN115693080A (en) * | 2023-01-03 | 2023-02-03 | 四川斯艾普电子科技有限公司 | High-power synthesizer implementation method based on thick-film circuit substrate |
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2023
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| CN115776763B (en) | 2023-05-05 |
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