CN115771882B - Preparation method of quantum voiceprint probe and quantum voiceprint probe - Google Patents
Preparation method of quantum voiceprint probe and quantum voiceprint probe Download PDFInfo
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- CN115771882B CN115771882B CN202211365390.3A CN202211365390A CN115771882B CN 115771882 B CN115771882 B CN 115771882B CN 202211365390 A CN202211365390 A CN 202211365390A CN 115771882 B CN115771882 B CN 115771882B
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- 239000000523 sample Substances 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 100
- 239000010703 silicon Substances 0.000 claims abstract description 100
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 99
- 238000005530 etching Methods 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 238000001039 wet etching Methods 0.000 claims abstract description 43
- 238000001312 dry etching Methods 0.000 claims abstract description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 49
- 230000008569 process Effects 0.000 claims description 31
- 235000012431 wafers Nutrition 0.000 claims description 27
- 239000007788 liquid Substances 0.000 claims description 14
- 239000000725 suspension Substances 0.000 claims description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to the technical field of semiconductor sensors, and particularly discloses a preparation method of a quantum voiceprint probe and the quantum voiceprint probe, which comprise the following steps: providing a silicon substrate; depositing silicon nitride materials on the upper surface and the lower surface of the silicon substrate to obtain a suspended film layer positioned on the upper surface of the silicon substrate and a window etching layer positioned on the lower surface of the silicon substrate; wet etching is carried out on the window etching layer to form a wet etching window, and a reflecting mirror surface structure is formed in the wet etching window; and forming the quantum voiceprint probe comprising a suspended film and a reflecting mirror surface structure after dry etching is performed in the wet etching window. The quantum voiceprint probe prepared by the preparation method provided by the invention has good uniformity and low cost.
Description
Technical Field
The invention relates to the technical field of semiconductor sensors, in particular to a preparation method of a quantum voiceprint probe and the quantum voiceprint probe.
Background
The micro microphone is manufactured on the silicon chip by adopting the MEMS processing technology, so that the defects of large volume, low circuit integration level, high power consumption and the like of the traditional microphone are overcome. In order to improve the cost performance of the microphone, the microphone is promoted to develop towards miniaturization and high sensitivity. Because the sensor is still mainly based on electrical detection mechanisms such as capacitance, piezoelectricity and the like, the detection end cannot interfere with external electromagnetic signals, which necessarily severely limits the application of the acoustic sensor to special application environments requiring high insulation performance and good electromagnetic interference resistance.
The quantum sensor is a physical device designed according to quantum mechanics law and utilizing quantum superposition quantum entanglement, quantum compression and other effects and used for executing transformation on the measured system. The quantum voiceprint sensor directly interacts with electron, photon and other systems through external phonons to change the quantum states of the external phonons, and finally the high-sensitivity measurement of external sound is realized through detecting the changed quantum states.
The most important structure of the quantum voiceprint sensor is a sound sensitive structure prepared by adopting a quantum enhanced MEMS technology. The known sound-sensitive structure prepared based on the light intensity reflection principle is prepared into a high-reflection film such as silver/gold and the like by a film plating technology, and the method needs expensive equipment and noble metal, has higher cost and has higher requirement on film plating uniformity.
Disclosure of Invention
The invention provides a preparation method of a quantum voiceprint probe and the quantum voiceprint probe, which solve the problems of poor uniformity and high cost of a sound sensitive structure in the related technology.
As a first aspect of the present invention, there is provided a method of manufacturing a quantum voiceprint probe, comprising:
providing a silicon substrate;
depositing silicon nitride materials on the upper surface and the lower surface of the silicon substrate to obtain a suspended film layer positioned on the upper surface of the silicon substrate and a window etching layer positioned on the lower surface of the silicon substrate;
wet etching is carried out on the window etching layer to form a wet etching window, and a reflecting mirror surface structure is formed in the wet etching window;
and forming the quantum voiceprint probe comprising a suspended film and a reflecting mirror surface structure after dry etching is performed in the wet etching window.
Further, the providing a silicon substrate includes:
selecting double polished silicon wafers;
cleaning the double polished silicon wafer according to a standard RCA cleaning process;
and spin-drying the cleaned double polished silicon wafer, and baking to obtain the silicon substrate.
Further, the thickness of the double-polished silicon wafer is 350 μm, and the crystal orientation of the double-polished silicon wafer is 100.
Further, depositing a silicon nitride material on both the upper surface and the lower surface of the silicon substrate to obtain a suspended film layer positioned on the upper surface of the silicon substrate and a window etching layer positioned on the lower surface of the silicon substrate, wherein the method comprises the following steps:
growing silicon nitride on the upper and lower surfaces of the silicon substrate through a PECVD process;
etching the silicon nitride growing on the lower surface of the silicon substrate according to the etching process to obtain a window etching layer;
and a suspension film layer is formed on the upper surface of the silicon substrate.
Further, etching the silicon nitride growing on the lower surface of the silicon substrate according to the etching process to obtain a window etching layer, including:
transferring a pattern window with a rectangular shape to the lower surface of the silicon substrate;
etching the silicon nitride in the pattern window according to an RIE etching process;
and removing the graphical window according to a dry photoresist removing process to obtain a window etching layer.
Further, wet etching is performed on the window etching layer to form a wet etching window, and a reflecting mirror surface structure is formed in the wet etching window, including:
and placing the silicon substrate of the window etching layer into etching liquid for etching to obtain the reflecting mirror surface structure.
Further, the etching liquid comprises TMAH liquid, the temperature of the etching liquid is 80 ℃, and the concentration of the etching liquid is 20%.
Further, the thickness of the mirror surface structure is 20 μm.
Further, after dry etching is performed in the wet etching window, a quantum voiceprint probe including a suspended film and a reflecting mirror surface structure is formed, and the method comprises the following steps:
according to the glue spraying and pattern transferring process, a dry etching window with a back-shaped structure is obtained;
and placing the silicon substrate into a deep reactive ion etching machine to etch the silicon substrate in the dry etching window, so as to obtain the quantum voiceprint probe comprising the suspended film and the reflecting mirror surface structure.
As another aspect of the present invention, there is provided a quantum voiceprint probe prepared by using the method for preparing a quantum voiceprint probe described above, including:
a silicon substrate, wherein a rectangular window is arranged in the central area of the silicon substrate, a reflecting mirror surface structure is arranged in the rectangular window,
the reflecting surface of the reflecting mirror surface structure faces to the direction away from the suspension film, the reflecting mirror surface structure and the silicon substrate form a back-shaped structure,
and a suspension film is formed on the upper surface of the silicon substrate, and the surface of the reflecting mirror surface structure, which is away from the reflecting surface, is contacted with the suspension film.
According to the preparation method of the quantum voiceprint probe, when the quantum voiceprint probe is manufactured, firstly, a mirror surface structure is manufactured by wet etching, then, redundant silicon wafers are etched by dry etching to obtain a suspended film structure, namely, the silicon wafers with specific crystal orientations are subjected to wet etching by a wet etching process, and the mirror surface structure with high reflectivity is prepared; and etching the rest silicon by a dry etching technology to prepare the suspended film structure. Therefore, the sound-sensitive structure prepared by combining the wet etching technology and the dry etching technology has the advantages of good uniformity and low cost.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate the invention and together with the description serve to explain, without limitation, the invention.
Fig. 1 is a flowchart of a preparation method of a quantum voiceprint probe provided by the invention.
Fig. 2 is a schematic diagram of a structure of a silicon substrate according to the present invention.
Fig. 3 is a schematic structural diagram of a suspended film layer and a window etching layer provided by the invention.
Fig. 4 is a schematic structural diagram before forming a pattern window during wet etching according to the present invention.
Fig. 5 is a schematic structural diagram of forming a pattern window during wet etching according to the present invention.
Fig. 6 is a schematic diagram of a structure for forming an etching window according to the present invention.
Fig. 7 is a schematic structural diagram of forming a wet etching window according to the present invention.
Fig. 8 is a schematic structural diagram of glue spraying before dry etching according to the present invention.
Fig. 9 is a schematic structural diagram of a suspended film structure formed after dry etching according to the present invention.
Detailed Description
It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other. The invention will be described in detail below with reference to the drawings in connection with embodiments.
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In this embodiment, a method for manufacturing a quantum voiceprint probe is provided, and fig. 1 is a flowchart of a method for manufacturing a quantum voiceprint probe according to an embodiment of the present invention, as shown in fig. 1, including:
s100, providing a silicon substrate;
in an embodiment of the present invention, as shown in fig. 2, the providing a silicon substrate includes:
selecting double polished silicon wafers;
cleaning the double polished silicon wafer according to a standard RCA cleaning process;
and spin-drying the cleaned double polished silicon wafer, and baking to obtain the silicon substrate 10.
Preferably, the thickness of the double-polished silicon wafer is 350 μm, and the crystal orientation of the double-polished silicon wafer is 100.
Specifically, a double-polished silicon wafer with the thickness of 350 mu m and the crystal orientation of 100 is cleaned by adopting an RCA standard cleaning method, and the cleaned silicon wafer is dried and then is put into a clean oven with the temperature of 80 ℃ to be baked for 2 hours for standby.
S200, depositing silicon nitride materials on the upper surface and the lower surface of the silicon substrate to obtain a suspended film layer positioned on the upper surface of the silicon substrate and a window etching layer positioned on the lower surface of the silicon substrate;
as shown in fig. 3, the specific process of forming the suspended film layer 21 and the window etching layer 22 includes:
growing silicon nitride on the upper and lower surfaces of the silicon substrate 10 through a PECVD process;
etching the silicon nitride growing on the lower surface of the silicon substrate 10 according to the etching process to obtain a window etching layer 22;
the upper surface of the silicon substrate 10 forms a dangling film layer 21.
In the embodiment of the invention, etching the silicon nitride growing on the lower surface of the silicon substrate according to the etching process to obtain the window etching layer comprises the following steps:
transferring a pattern window 30 having a rectangular shape to a lower surface of the silicon substrate 10;
etching the silicon nitride in the pattern window according to an RIE (Reactive ion etching ) etching process;
the pattern window is removed according to a dry photoresist removal process to obtain window etch layer 22.
Specifically, as shown in fig. 3 to 6, the dried silicon substrate 10 is grown with silicon carbide with a thickness of 2 μm on both front and back sides by PECVD, then pattern transfer is performed, a rectangular pattern window 30 is transferred to the back side of the silicon wafer, the silicon carbide in the pattern window is etched by RIE etching process, then dry photoresist removal is performed, and the window etching layer 22 shown in fig. 6 is obtained, and an etching window 23 is formed in the middle of the window etching layer 22.
S300, performing wet etching on the window etching layer 22 to form a wet etching window 24, wherein a reflecting mirror surface structure is formed in the wet etching window 24;
in the embodiment of the present invention, the silicon substrate of the window etching layer 22 is put into etching solution for etching, so as to obtain a mirror surface structure.
It should be understood that, as shown in fig. 7, the wet etching window 24 is formed after wet etching is performed in the etching solution of the manner in which the silicon substrate 10 of the window etching layer 22 is obtained, and the mirror plane structure can be formed in the wet etching window 24.
Preferably, the etching liquid comprises TMAH liquid, the temperature of the etching liquid is 80 ℃, and the concentration of the etching liquid is 20%.
Specifically, the silicon wafer with the etched window 23 is put into TMAH solution with the concentration of 20% at 80 ℃ and etched for 2 hours, so as to obtain the mirror surface structure with the thickness of 20 μm.
S400, forming the quantum voiceprint probe comprising a suspended film and a reflecting mirror surface structure after dry etching in the wet etching window 24.
It should be understood that, due to the limitation of the wet etching process, after the wet etching is finished, there is still a part of structure remaining, so the remaining structure needs to be removed by the dry etching process, and in the embodiment of the present invention, the method specifically may include:
according to the glue spraying and pattern transferring process, a dry etching window 25 with a back-shaped structure is obtained;
and placing the silicon substrate into a deep reactive ion etching machine to etch the silicon substrate in the dry etching window 25, so as to obtain the quantum voiceprint probe comprising the suspended film and the reflecting mirror surface structure.
Specifically, as shown in fig. 8 and 9, a dry etching window with a zigzag structure is obtained by using a photoresist spraying and pattern transferring process, then a silicon wafer is placed into a deep reactive ion etching machine, and the rest silicon wafer in the etching window is etched to obtain an acoustic sensitive structure with a reflecting mirror surface structure 50 with the thickness of 20 μm.
As can be seen from fig. 8, in the dry etching, glue 40 is sprayed on the lower surface of the silicon substrate 10 and the area of the mirror surface structure 50, and then the redundant silicon wafer in the dry etching window 25 is etched, so as to finally obtain the zigzag structure as shown in fig. 9. In the finally formed quantum voiceprint probe shown in fig. 9, the suspended film layer 21 is a suspended film, the mirror surface structure 50 is a structure which is positioned at the center of the silicon substrate 10 and is connected with the suspended film layer 21, and the reflecting surface of the mirror surface structure 50 faces away from the suspended film layer.
In summary, the preparation method of the quantum voiceprint probe provided by the invention comprises the steps of firstly preparing a reflecting mirror surface structure by wet etching, and then etching redundant silicon wafers by dry etching to obtain a suspended film structure, namely, wet etching the silicon wafers with specific crystal orientation by wet etching process to prepare the mirror surface structure with high reflectivity; and etching the rest silicon by a dry etching technology to prepare the suspended film structure. Therefore, the sound-sensitive structure prepared by combining the wet etching technology and the dry etching technology has the advantages of good uniformity and low cost.
As another embodiment of the present invention, a quantum voiceprint probe is provided, and the quantum voiceprint probe is prepared by using the preparation method of the quantum voiceprint probe, as shown in fig. 9, and includes:
a silicon substrate 10, a rectangular window is arranged in the central area of the silicon substrate 10, a reflecting mirror surface structure 50 is arranged in the rectangular window,
the reflective surface of the mirror structure 50 faces away from the suspended film, the mirror structure 50 forms a back-shaped structure with the silicon substrate 10,
the upper surface of the silicon substrate 10 forms a suspension film, and the surface of the reflecting mirror surface structure 50 facing away from the reflecting surface is in contact with the suspension film.
As shown in fig. 9, the suspended film is the suspended film layer 21, and the quantum voiceprint probe is obtained by combining the wet etching and the dry etching processes, that is, the reflecting mirror surface structure is prepared by using a wet etching technology on a silicon wafer with a specific crystal orientation, and the silicon remained by the wet etching is etched by using a deep reactive ion etching technology, so that the sound-sensitive structure with ultrahigh reflectivity is prepared, and the prepared sound-sensitive structure has the advantages of good uniformity and low cost.
The specific working principle of the quantum voiceprint probe provided by the embodiment of the invention can refer to the description of the preparation method of the quantum voiceprint probe, and the description is omitted here.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (10)
1. The preparation method of the quantum voiceprint probe is characterized by comprising the following steps of:
providing a silicon substrate;
depositing silicon nitride materials on the upper surface and the lower surface of the silicon substrate to obtain a suspended film layer positioned on the upper surface of the silicon substrate and a window etching layer positioned on the lower surface of the silicon substrate;
wet etching is carried out on the window etching layer to form a wet etching window, and a reflecting mirror surface structure is formed in the wet etching window;
and forming the quantum voiceprint probe comprising a suspended film and a reflecting mirror surface structure after dry etching is performed in the wet etching window.
2. The method of manufacturing a quantum voiceprint probe according to claim 1, wherein the providing a silicon substrate comprises:
selecting double polished silicon wafers;
cleaning the double polished silicon wafer according to a standard RCA cleaning process;
and spin-drying the cleaned double polished silicon wafer, and baking to obtain the silicon substrate.
3. The method for preparing the quantum voiceprint probe according to claim 2, wherein the thickness of the double-polished silicon wafer is 350 μm, and the crystal orientation of the double-polished silicon wafer is 100.
4. The method for preparing the quantum voiceprint probe according to claim 1, wherein depositing silicon nitride materials on both the upper and lower surfaces of the silicon substrate to obtain a suspended film layer on the upper surface of the silicon substrate and a window etching layer on the lower surface of the silicon substrate, comprises:
growing silicon nitride on the upper and lower surfaces of the silicon substrate through a PECVD process;
etching the silicon nitride growing on the lower surface of the silicon substrate according to the etching process to obtain a window etching layer;
and a suspension film layer is formed on the upper surface of the silicon substrate.
5. The method for preparing a quantum voiceprint probe according to claim 4, wherein etching the silicon nitride grown on the lower surface of the silicon substrate according to the etching process to obtain a window etching layer comprises:
transferring a pattern window with a rectangular shape to the lower surface of the silicon substrate;
etching the silicon nitride in the pattern window according to an RIE etching process;
and removing the graphical window according to a dry photoresist removing process to obtain a window etching layer.
6. The method for preparing a quantum voiceprint probe according to claim 1, wherein wet etching is performed on the window etching layer to form a wet etching window, and a mirror surface structure is formed in the wet etching window, comprising:
and placing the silicon substrate of the window etching layer into etching liquid for etching to obtain the reflecting mirror surface structure.
7. The method for preparing the quantum voiceprint probe according to claim 6, wherein the etching liquid comprises TMAH liquid, the temperature of the etching liquid is 80 ℃, and the concentration of the etching liquid is 20%.
8. The method of claim 6, wherein the thickness of the mirror surface structure is 20 μm.
9. The method of claim 1, wherein forming the quantum voiceprint probe including a suspended film and a mirror structure after dry etching in the wet etching window comprises:
according to the glue spraying and pattern transferring process, a dry etching window with a back-shaped structure is obtained;
and placing the silicon substrate into a deep reactive ion etching machine to etch the silicon substrate in the dry etching window, so as to obtain the quantum voiceprint probe comprising the suspended film and the reflecting mirror surface structure.
10. A quantum voiceprint probe prepared by the method for preparing a quantum voiceprint probe according to any one of claims 1 to 9, comprising:
a silicon substrate, wherein a rectangular window is arranged in the central area of the silicon substrate, a reflecting mirror surface structure is arranged in the rectangular window,
the reflecting surface of the reflecting mirror surface structure faces to the direction away from the suspension film, the reflecting mirror surface structure and the silicon substrate form a back-shaped structure,
and a suspension film is formed on the upper surface of the silicon substrate, and the surface of the reflecting mirror surface structure, which is away from the reflecting surface, is contacted with the suspension film.
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| AU2002950739A0 (en) * | 2002-08-13 | 2002-09-12 | The University Of Western Australia | A resonant cavity enhanced device and a method for fabricating same |
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