CN115771882A - Preparation method of quantum voiceprint probe and quantum voiceprint probe - Google Patents
Preparation method of quantum voiceprint probe and quantum voiceprint probe Download PDFInfo
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- CN115771882A CN115771882A CN202211365390.3A CN202211365390A CN115771882A CN 115771882 A CN115771882 A CN 115771882A CN 202211365390 A CN202211365390 A CN 202211365390A CN 115771882 A CN115771882 A CN 115771882A
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- 239000000523 sample Substances 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 100
- 239000010703 silicon Substances 0.000 claims abstract description 100
- 238000005530 etching Methods 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 238000001039 wet etching Methods 0.000 claims abstract description 42
- 238000001312 dry etching Methods 0.000 claims abstract description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000725 suspension Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 56
- 230000008569 process Effects 0.000 claims description 31
- 239000003292 glue Substances 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000006835 compression Effects 0.000 description 1
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- 238000009413 insulation Methods 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001755 vocal effect Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of semiconductor sensors, and particularly discloses a quantum voiceprint probe and a preparation method thereof, wherein the quantum voiceprint probe comprises the following steps: providing a silicon substrate; depositing silicon nitride materials on the upper surface and the lower surface of the silicon substrate to obtain a suspension film layer positioned on the upper surface of the silicon substrate and a window etching layer positioned on the lower surface of the silicon substrate; performing wet etching on the window etching layer to form a wet etching window, wherein a reflector structure is formed in the wet etching window; and forming the quantum voiceprint probe comprising the suspended film and the reflecting mirror surface structure after dry etching in the wet etching window. The quantum voiceprint probe prepared by the preparation method of the quantum voiceprint probe provided by the invention is good in uniformity and low in cost.
Description
Technical Field
The invention relates to the technical field of semiconductor sensors, in particular to a quantum voiceprint probe and a preparation method thereof.
Background
The micro microphone is manufactured on the silicon chip by adopting the MEMS processing technology, so that the defects of large volume, low circuit integration level, large power consumption and the like of the traditional microphone are overcome. The microphone is promoted to be miniaturized and high in sensitivity in order to improve the cost performance of the microphone. Because the acoustic sensor is still mainly based on electric detection mechanisms such as capacitance and piezoelectricity, the detection end has no ability to interfere with external electromagnetic signals, and the application of the acoustic sensor to special application environments requiring high insulation performance and good anti-electromagnetic interference capability is inevitably severely limited.
The quantum sensor is a physical device designed by using quantum superposition quantum entanglement, quantum compression and other effects according to quantum mechanical rules and used for executing transformation on system measurands. The quantum vocal print sensor directly interacts with systems such as electrons and photons through external phonons, changes the quantum states of the systems, and finally detects the changed quantum states to realize high-sensitivity measurement of external sounds.
The most important structure of the quantum voiceprint sensor is a voice sensitive structure prepared by adopting a quantum enhanced MEMS technology. The existing sound sensitive structure prepared based on the light intensity reflection principle is prepared into a high-reflection film such as silver/gold and the like by a coating technology, and the method needs expensive equipment and precious metals, has higher cost and has higher requirement on the uniformity of coating.
Disclosure of Invention
The invention provides a quantum voiceprint probe and a preparation method thereof, and solves the problems of poor uniformity and high cost of a sound sensitive structure in the related art.
As a first aspect of the present invention, there is provided a method for manufacturing a quantum voiceprint probe, comprising:
providing a silicon substrate;
depositing silicon nitride materials on the upper surface and the lower surface of the silicon substrate to obtain a suspension film layer positioned on the upper surface of the silicon substrate and a window etching layer positioned on the lower surface of the silicon substrate;
performing wet etching on the window etching layer to form a wet etching window, wherein a reflecting mirror surface structure is formed in the wet etching window;
and forming the quantum voiceprint probe comprising the suspended film and the reflecting mirror surface structure after dry etching in the wet etching window.
Further, the providing a silicon substrate includes:
selecting a double-polished silicon wafer;
cleaning the double polished silicon wafer according to a standard RCA cleaning process;
and drying the cleaned double polished silicon wafer by spin drying, and baking to obtain the silicon substrate.
Further, the thickness of the double polished silicon wafer is 350 μm, and the crystal orientation of the double polished silicon wafer is 100.
Further, depositing silicon nitride materials on the upper and lower surfaces of the silicon substrate to obtain a suspension film layer on the upper surface of the silicon substrate and a window etching layer on the lower surface of the silicon substrate, including:
growing silicon nitride on the upper surface and the lower surface of the silicon substrate by a PECVD process;
etching the silicon nitride growing on the lower surface of the silicon substrate according to an etching process to obtain a window etching layer;
and a suspended film layer is formed on the upper surface of the silicon substrate.
Further, etching the silicon nitride grown on the lower surface of the silicon substrate according to an etching process to obtain a window etching layer, including:
transferring a pattern window in a rectangular shape to the lower surface of the silicon substrate;
etching the silicon nitride in the pattern window according to the RIE etching process;
and removing the pattern window according to a dry glue removing process to obtain a window etching layer.
Further, performing wet etching on the window etching layer to form a wet etching window, in which a mirror structure is formed, including:
and putting the silicon substrate of the window etching layer into etching liquid for etching to obtain the reflecting mirror surface structure.
Further, the etching solution comprises TMAH solution, and the temperature of the etching solution is 80 ℃ and the concentration of the etching solution is 20%.
Further, the thickness of the mirror surface structure is 20 μm.
Further, forming a quantum voiceprint probe including a suspended film and a mirror structure after performing dry etching in the wet etching window, including:
obtaining a dry etching window with a zigzag structure according to the glue spraying and pattern transferring process;
and putting the silicon substrate into a deep reactive ion etching machine to etch the silicon substrate in the dry etching window to obtain the quantum acoustic wave probe comprising the suspended membrane and the reflecting mirror surface structure.
As another aspect of the present invention, there is provided a quantum voiceprint probe prepared by the method for preparing a quantum voiceprint probe described above, wherein the method includes:
a silicon substrate, a rectangular window is arranged in the central area of the silicon substrate, a reflecting mirror surface structure is arranged in the rectangular window,
the reflecting surface of the reflecting mirror surface structure faces to the direction departing from the suspended film, the reflecting mirror surface structure and the silicon substrate form a zigzag structure,
and a suspension film is formed on the upper surface of the silicon substrate, and the surface of the reflecting mirror surface structure departing from the reflecting surface is in contact with the suspension film.
When the preparation method of the quantum voiceprint probe is used for manufacturing, firstly, a reflection mirror surface structure is obtained by wet etching, then, a redundant silicon wafer is etched by dry etching to obtain a suspended membrane structure, namely, the silicon wafer with a specific crystal orientation is subjected to wet etching by a wet etching process to prepare a mirror surface structure with high reflectivity; and etching the residual silicon by a dry etching technology to prepare the suspended membrane structure. Therefore, the sound-sensitive structure prepared by the method of combining the wet etching technology and the dry etching technology has the advantages of good uniformity and low cost.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention.
Fig. 1 is a flowchart of a method for manufacturing a quantum voiceprint probe according to the present invention.
Fig. 2 is a schematic structural view of a silicon substrate provided by the present invention.
FIG. 3 is a schematic structural diagram of a suspension film layer and a window etching layer provided by the present invention.
Fig. 4 is a schematic structural diagram before a pattern window is formed during wet etching according to the present invention.
Fig. 5 is a schematic structural view of a pattern window formed during wet etching according to the present invention.
FIG. 6 is a schematic diagram of a structure for forming an etching window according to the present invention.
Fig. 7 is a schematic structural diagram of forming a wet etching window provided by the present invention.
Fig. 8 is a schematic structural diagram of glue spraying before dry etching according to the present invention.
Fig. 9 is a schematic structural diagram of a suspended film structure formed after dry etching according to the present invention.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged under appropriate circumstances in order to facilitate the description of the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In this embodiment, a method for manufacturing a quantum voiceprint probe is provided, and fig. 1 is a flowchart of a method for manufacturing a quantum voiceprint probe according to an embodiment of the present invention, as shown in fig. 1, including:
s100, providing a silicon substrate;
in an embodiment of the present invention, as shown in fig. 2, the providing a silicon substrate includes:
selecting a double-polished silicon wafer;
cleaning the double polished silicon wafer according to a standard RCA cleaning process;
and drying the cleaned double polished silicon wafer and baking to obtain the silicon substrate 10.
Preferably, the thickness of the double-polished silicon wafer is 350 μm, and the crystal orientation of the double-polished silicon wafer is 100.
Specifically, a double-polished silicon wafer with the thickness of 350 mu m and the crystal orientation of 100 is cleaned by adopting an RCA standard cleaning method, and the cleaned silicon wafer is dried and then placed into a clean oven with the temperature of 80 ℃ and baked for 2 hours for standby.
S200, depositing silicon nitride materials on the upper surface and the lower surface of the silicon substrate to obtain a suspension film layer on the upper surface of the silicon substrate and a window etching layer on the lower surface of the silicon substrate;
as shown in fig. 3, the specific process of forming the suspension layer 21 and the window etching layer 22 includes:
growing silicon nitride on the upper surface and the lower surface of the silicon substrate 10 by a PECVD process;
etching the silicon nitride growing on the lower surface of the silicon substrate 10 according to an etching process to obtain a window etching layer 22;
a suspended film layer 21 is formed on the upper surface of the silicon substrate 10.
In the embodiment of the present invention, etching silicon nitride grown on a lower surface of a silicon substrate according to an etching process to obtain a window etching layer includes:
transferring a pattern window 30 having a rectangular shape to a lower surface of the silicon substrate 10;
etching the silicon nitride in the pattern window according to a Reactive Ion Etching (RIE) etching process;
the pattern window is removed according to a dry photoresist removal process to obtain a window etch layer 22.
Specifically, as shown in fig. 3 to fig. 6, silicon carbide with a thickness of 2 μm is grown on both the front and back sides of the dried silicon substrate 10 by PECVD, then pattern transfer is performed, a rectangular pattern window 30 is transferred to the back side of the silicon wafer, silicon carbide in the pattern window is etched by RIE etching process, then dry glue removal is performed to obtain a window etching layer 22 shown in fig. 6, and an etching window 23 is formed in the middle of the window etching layer 22.
S300, performing wet etching on the window etching layer 22 to form a wet etching window 24, wherein a reflector structure is formed in the wet etching window 24;
in the embodiment of the present invention, the silicon substrate of the window etching layer 22 is placed in an etching solution for etching, so as to obtain a mirror surface structure.
It should be understood that, as shown in fig. 7, after wet etching is performed in the etching solution of the silicon substrate 10 for obtaining the window etching layer 22, a wet etching window 24 is formed, and a mirror plane structure can be formed in the wet etching window 24.
Preferably, the etching liquid comprises TMAH liquid, and the temperature of the etching liquid is 80 ℃ and the concentration of the etching liquid is 20%.
Specifically, the silicon wafer with the etching window 23 is placed in 20% TMAH solution at 80 ℃ for etching for 2h to obtain a reflecting mirror structure with a thickness of 20 μm.
S400, forming the quantum voiceprint probe comprising the suspended membrane and the reflecting mirror surface structure after dry etching is carried out in the wet etching window 24.
It should be understood that, due to the limitation of the wet etching process, after the wet etching is finished, a part of the structure still remains, and therefore, the remaining structure needs to be removed by the dry etching process, which may specifically include:
obtaining a dry etching window 25 with a zigzag structure according to the glue spraying and pattern transfer process;
and putting the silicon substrate into a deep reactive ion etching machine to etch the silicon substrate in the dry etching window 25 to obtain the quantum voiceprint probe comprising the suspended membrane and the reflector structure.
Specifically, as shown in fig. 8 and 9, a dry etching window with a zigzag structure is obtained by using glue spraying and pattern transferring processes, and then the silicon wafer is placed in a deep reactive ion etcher, and the remaining silicon wafer in the etching window is etched away, so as to obtain the acoustic sensor structure with a 20 μm thick mirror surface structure 50.
As can be seen from fig. 8, during the dry etching, the glue 40 is sprayed on the lower surface of the silicon substrate 10 and the area of the mirror surface structure 50, and then the excess silicon wafer in the dry etching window 25 is etched, so as to finally obtain the zigzag structure shown in fig. 9. In the finally formed quantum voiceprint probe shown in fig. 9, the suspended film layer 21 is a suspended film, the mirror surface structure 50 is a structure which is located at the center of the silicon substrate 10 and is connected with the suspended film layer 21, and the reflection surface of the mirror surface structure 50 faces to the direction away from the suspended film layer.
In summary, in the preparation method of the quantum acoustic fringe probe provided by the invention, when the preparation is carried out, firstly, the wet etching is utilized to prepare the reflecting mirror surface structure, then, the dry etching is utilized to etch the redundant silicon wafer to obtain the suspended membrane structure, namely, the wet etching process is utilized to carry out the wet etching on the silicon wafer with the specific crystal orientation to prepare the mirror surface structure with high reflectivity; and etching the residual silicon by a dry etching technology to prepare the suspended membrane structure. Therefore, the sound-sensitive structure prepared by the method of combining the wet etching technology and the dry etching technology has the advantages of good uniformity and low cost.
As another embodiment of the present invention, there is provided a quantum voiceprint probe prepared by the method for preparing a quantum voiceprint probe described above, wherein as shown in fig. 9, the method includes:
a silicon substrate 10, a rectangular window is arranged in the central area of the silicon substrate 10, a reflecting mirror structure 50 is arranged in the rectangular window,
the reflecting surface of the mirror surface structure 50 faces away from the suspended film, the mirror surface structure 50 and the silicon substrate 10 form a zigzag structure,
the upper surface of the silicon substrate 10 forms a suspended film, with which the surface of the mirror structure 50 facing away from the reflecting surface is in contact.
As shown in fig. 9, the suspension film is the suspension film layer 21, and the quantum voiceprint probe is obtained by combining the wet etching and dry etching processes, that is, a reflection mirror surface structure is prepared on a silicon wafer with a specific crystal orientation by using a wet etching technology, and silicon remained by the wet etching is etched by using a deep reactive ion etching technology to prepare a voice sensitive structure with ultrahigh reflectivity, so that the prepared voice sensitive structure has the advantages of good uniformity and low cost.
For the specific working principle of the quantum voiceprint probe provided by the embodiment of the present invention, reference may be made to the foregoing description of the preparation method of the quantum voiceprint probe, and details are not described here again.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and scope of the invention, and such modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A preparation method of a quantum voiceprint probe is characterized by comprising the following steps:
providing a silicon substrate;
depositing silicon nitride materials on the upper surface and the lower surface of the silicon substrate to obtain a suspension film layer positioned on the upper surface of the silicon substrate and a window etching layer positioned on the lower surface of the silicon substrate;
performing wet etching on the window etching layer to form a wet etching window, wherein a reflecting mirror surface structure is formed in the wet etching window;
and forming the quantum voiceprint probe comprising the suspended film and the reflecting mirror surface structure after dry etching in the wet etching window.
2. The method of claim 1, wherein the providing a silicon substrate comprises:
selecting a double-polished silicon wafer;
cleaning the double polished silicon wafer according to a standard RCA cleaning process;
and drying the cleaned double polished silicon wafer by spin drying, and baking to obtain the silicon substrate.
3. The method for preparing the quantum voiceprint probe according to claim 2, wherein the thickness of the double polished silicon wafer is 350 μm, and the crystal orientation of the double polished silicon wafer is 100.
4. The method for preparing a quantum voiceprint probe according to claim 1, wherein silicon nitride materials are deposited on both the upper and lower surfaces of the silicon substrate to obtain a suspension film layer on the upper surface of the silicon substrate and a window etching layer on the lower surface of the silicon substrate, and the method comprises the following steps:
growing silicon nitride on the upper surface and the lower surface of the silicon substrate by a PECVD process;
etching the silicon nitride growing on the lower surface of the silicon substrate according to an etching process to obtain a window etching layer;
and a suspended film layer is formed on the upper surface of the silicon substrate.
5. The method for preparing a quantum voiceprint probe according to claim 4, wherein etching silicon nitride grown on the lower surface of the silicon substrate according to an etching process to obtain a window etching layer comprises:
transferring a pattern window in a rectangular shape to the lower surface of the silicon substrate;
etching the silicon nitride in the pattern window according to the RIE etching process;
and removing the pattern window according to a dry glue removing process to obtain a window etching layer.
6. The method for preparing a quantum voiceprint probe according to claim 1, wherein a wet etching window is formed by performing wet etching on the window etching layer, and a mirror structure is formed in the wet etching window, comprising:
and putting the silicon substrate of the window etching layer into etching liquid for etching to obtain the reflecting mirror surface structure.
7. The method for preparing the quantum voiceprint probe according to claim 6, wherein the etching solution comprises TMAH solution, and the temperature of the etching solution is 80 ℃ and the concentration of the etching solution is 20%.
8. The method of claim 6, wherein the thickness of the mirror structure is 20 μm.
9. The method for preparing the quantum voiceprint probe according to claim 1, wherein the quantum voiceprint probe comprising the suspended film and the mirror surface structure is formed after dry etching in the wet etching window, and the method comprises the following steps:
obtaining a dry etching window with a zigzag structure according to the glue spraying and pattern transfer process;
and putting the silicon substrate into a deep reactive ion etching machine to etch the silicon substrate in the dry etching window to obtain the quantum acoustic wave probe comprising the suspended membrane and the reflecting mirror surface structure.
10. A quantum voiceprint probe prepared by the method of any one of claims 1 to 9, comprising:
a silicon substrate, wherein a rectangular window is arranged in the central area of the silicon substrate, a reflecting mirror surface structure is arranged in the rectangular window,
the reflecting surface of the reflecting mirror surface structure faces to the direction departing from the suspended film, the reflecting mirror surface structure and the silicon substrate form a zigzag structure,
and a suspension film is formed on the upper surface of the silicon substrate, and the surface of the reflecting mirror surface structure departing from the reflecting surface is in contact with the suspension film.
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