CN115754561A - PTCR thermistor zero-power voltage effect testing method and device - Google Patents
PTCR thermistor zero-power voltage effect testing method and device Download PDFInfo
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Abstract
The invention belongs to the field of electronic circuits, and particularly relates to a PTCR thermistor zero-power voltage effect test method and a device, wherein the method comprises the following steps: controlling the ambient temperature; setting the supply voltage of a voltage source in the voltage effect test circuit; sequentially controlling a plurality of thermistors to be tested to be connected with a voltage effect test circuit, controlling a voltage source to output a preset supply voltage, controlling a voltmeter to be respectively connected with two ends of the current thermistor to be tested and a sampling resistor, correspondingly obtaining two voltage values, and calculating the resistance value of the current thermistor to be tested at the current test temperature by combining the resistance value of the sampling resistor; changing the supply voltage to complete the resistance test of each thermistor to be tested under each preset supply voltage at the current test temperature; and changing the current test temperature until the zero-power voltage effect test analysis of each thermistor to be tested at each test temperature is completed. The invention can realize the zero-power voltage effect test of the large-scale high-efficiency thermistor.
Description
Technical Field
The invention belongs to the field of electronic circuits, and particularly relates to a PTCR thermistor zero-power voltage effect testing method and device.
Background
Barium titanate-based semiconductor ceramics have a significant positive resistance temperature characteristic (PTCR), in which the resistance value rises stepwise with an increase in temperature after the curie temperature point, and falls with an increase in temperature when the PTCR rises above the maximum resistance value, so that the PTCR has been widely used in many fields such as communications, home appliances, and transportation.
In addition, PTCR also has a significant voltage effect, manifested as a decrease in the zero power resistivity (typically measured above the curie point) of the material with increasing applied voltage. The voltage effect of the PTCR thermistor seriously influences the application effect, if the influence can not be limited in a controllable range, the performance of equipment is unstable or even damaged, but no such detecting instrument exists on the market at present, and the precision and the measuring efficiency of the testing instrument used in a laboratory are required to be improved so as to be applied on a large scale.
Disclosure of Invention
Aiming at the defects and the improvement requirements of the prior art, the invention provides a PTCR thermistor zero-power voltage effect test method and a PTCR thermistor zero-power voltage effect test device, and aims to provide a method capable of realizing large-scale efficient PTCR thermistor zero-power voltage effect test.
To achieve the above object, according to an aspect of the present invention, there is provided a PTCR thermistor zero-power voltage effect test method, including:
s1, setting and controlling an environment temperature to be a certain temperature as a current test temperature;
s2, setting a supply voltage value of a voltage source in the voltage effect test circuit;
s3, sequentially controlling a plurality of PTCR thermistors to be tested to be connected into the voltage effect test circuit, wherein the voltage effect test circuit comprises a voltage source, a protective resistor and a sampling resistor which are connected in series, one end of the connected thermistors to be tested is connected with the sampling resistor, the other end of the connected thermistors to be tested is connected with the voltage source to form a voltage effect test loop, and the voltage effect test circuit also comprises a voltmeter; controlling the voltage source to output a voltage corresponding to the supply voltage value, controlling a voltmeter to be respectively connected to two ends of the current thermistor to be tested and the sampling resistor to correspondingly obtain two voltage values, and calculating the resistance value of the current thermistor to be tested at the current test temperature by combining the resistance value of the sampling resistor;
s4, repeatedly executing the step S2 until the resistance test of each thermistor to be tested under each preset supply voltage is completed at the current test temperature, and analyzing and obtaining the zero-power voltage effect of the thermistor to be tested under the current test temperature based on each resistance value of the thermistor to be tested under different supply voltages;
and S5, repeatedly executing the step S1 until the zero-power voltage effect test analysis of the thermistors to be tested of the PTCR at each test temperature is completed.
Further, the voltage source is 3.5-4.5 mm level pulse width direct current pulse, and the voltmeter is a peak voltmeter.
Further, the direct current contactors are respectively adopted to control the switching of the thermistor to be tested of the PTCR and the switching of the voltage testing end.
Further, the ratio of the resistance value of the sampling resistor to the resistance value of the current thermistor to be tested at the current test temperature is 1%.
Furthermore, a plurality of sampling resistors with different resistance magnitudes are configured in the voltage effect test circuit; before S2 is executed, switching of the sampling resistor connected in the voltage effect test loop is controlled according to the current test temperature, so that the ratio of the resistance value of the sampling resistor currently connected in the voltage effect test loop to the resistance value of the thermistor to be tested at the current test temperature is 1%.
The invention also provides a PTCR thermistor zero-power voltage effect testing device, which is used for executing the PTCR thermistor zero-power voltage effect testing method, and comprises the following steps: the device comprises a singlechip 10, a voltage effect test circuit 11 and a temperature control system 12;
the voltage effect test circuit 11 comprises a voltage source U, a protective resistor R0 and a sampling resistor R1 which are connected in series, the other end of the sampling resistor R1 is used for being connected with one end of the thermistor to be tested, and the other end of the voltage source V is connected with the other end of the thermistor to be tested to form a voltage effect test loop; the device also comprises a voltmeter V;
the temperature control system 12 is used for controlling the ambient temperature;
the single chip microcomputer 10 is used for performing resistance value measurement and zero power voltage effect analysis operations of the thermistors to be tested at various test temperatures and various supply voltages.
Further, the voltage source U is 3.5-4.5 mm level pulse width direct current pulse, and the voltmeter V is a peak voltmeter.
The single chip microcomputer 10 controls switching of the thermistors to be tested by controlling opening and closing of the direct current contactors corresponding to the thermistors to be tested, and controls switching of the voltage testing ends by controlling the direct current contactors corresponding to the voltmeter.
Further, the ratio of the resistance value of the sampling resistor R1 to the resistance value of the current thermistor to be tested at the current test temperature is 1%.
Further, a plurality of sampling resistors with different resistance levels are configured in the voltage effect test circuit 11; before the single chip microcomputer 10 performs resistance measurement of each thermistor to be tested, switching of the sampling resistor R1 connected in the voltage effect test loop is controlled according to the current test temperature, so that the ratio of the resistance of the sampling resistor R1 currently connected in the voltage effect test loop to the resistance of the thermistor to be tested at the current test temperature is 1%.
Generally, by the above technical solution conceived by the present invention, the following beneficial effects can be obtained:
(1) The method is an automatic control method, an execution main body can be a chip embedded with a programming control algorithm, the chip is used for controlling measurement, and the cost is reduced, wherein under a certain test environment temperature, under each supply voltage, each PTCR thermistor to be tested is sequentially controlled to be connected into a voltage effect test circuit in a multi-probe automatic polling mode, the resistance of each resistor is tested, a plurality of samples (such as six samples) can be tested under the same supply voltage, the test efficiency is improved, the same voltage source and a voltmeter are integrated and adopted for each thermistor to be tested in the whole method, and the test procedure is greatly simplified. Wherein, add protection resistor, prevent that the circuit from burning out, guarantee the normal operation of procedure.
(2) The direct current pulse with the pulse width of 3.5-4.5 milliseconds is adopted, the pressurizing time is short, and the resistance value of the sample can not deviate due to self heating because of long pressurizing action time. The voltage value under the short pressurization time can be effectively captured by adopting the peak voltmeter.
(3) In order to ensure consistent test precision, the invention arranges a plurality of sampling resistors with different resistance magnitudes in the zero-power voltage effect test circuit, automatically controls switching (can be controlled by a chip or a singlechip) in a mode of automatically switching the sampling resistors, does not need to manually replace the sampling resistors according to the resistance change of the thermistor to be tested, and automatically realizes the switching by using the singlechip as a control center, thereby improving the test efficiency and precision and reducing errors.
Drawings
Fig. 1 is a flow chart of a method for testing zero-power voltage effect of a PTCR thermistor according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a PTCR thermistor zero-power voltage effect testing apparatus according to an embodiment of the present invention;
FIG. 3 is an interaction diagram of the components of a PTCR thermistor zero-power voltage effect testing apparatus according to an embodiment of the present invention;
fig. 4 is a flowchart of the operation of the sampling resistor switching part single chip microcomputer provided in the embodiment of the present invention;
FIG. 5 is a flow chart of a test of a PTCR thermistor zero-power voltage effect testing apparatus according to an embodiment of the present invention;
fig. 6 is a voltage effect graph of the thermistor to be tested for PTCR according to an embodiment of the present invention. The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:
10 is a singlechip, 11 is a voltage effect test circuit, and 12 is a temperature control system.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention. In addition, the technical features involved in the respective embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example one
A PTCR thermistor zero power voltage effect testing method, as described in fig. 1, comprising:
s1, setting and controlling an environment temperature to be a certain temperature as a current test temperature;
s2, setting a supply voltage value of a voltage source in the voltage effect test circuit;
s3, sequentially controlling a plurality of PTCR thermistors to be tested to be connected with a voltage effect test circuit, wherein the voltage effect test circuit comprises a voltage source, a protective resistor and a sampling resistor which are connected in series, one end of the connected thermistor to be tested is connected with the sampling resistor, the other end of the connected thermistor to be tested is connected with the voltage source to form a voltage effect test loop, and the voltage effect test circuit also comprises a voltmeter; controlling a voltage source to output a voltage corresponding to the supply voltage value, controlling a voltmeter to be respectively connected with two ends of the current thermistor to be tested and the sampling resistor, correspondingly obtaining two voltage values, and calculating the resistance value of the current thermistor to be tested at the current test temperature by combining the resistance value of the sampling resistor;
s4, repeatedly executing the step S2 until the resistance test of each thermistor to be tested under each preset supply voltage is completed at the current test temperature, and analyzing to obtain the zero-power voltage effect of the thermistor to be tested under the current test temperature on the basis of each resistance value of the thermistor to be tested under different supply voltages;
and S5, repeatedly executing the step S1 until the zero-power voltage effect test analysis of the thermistors to be tested of the PTCR at each test temperature is completed.
The embodiment of the method is an automatic control method, an execution main body can be a chip embedded with a programming control algorithm, the chip is used for controlling measurement, the cost is reduced, under the condition that the temperature of a test environment is fixed, under each supply voltage, a multi-probe automatic polling mode is used for sequentially controlling each PTCR thermistor to be tested to be connected with a voltage effect test circuit, the resistance of each resistor is tested, a plurality of samples (such as six samples) can be tested under the same supply voltage, the test efficiency is improved, the whole method integrates and adopts the same voltage source and a voltmeter for each thermistor to be tested, and the test program is greatly simplified. Wherein, add protection resistor, prevent that the circuit from burning out, guarantee the normal operation of procedure.
Preferably, the voltage source is a 3.5 to 4.5 mm class pulse width dc pulse, and the voltmeter is a peak voltmeter.
The direct current pulse with the pulse width of 3.5-4.5 milliseconds is adopted, the pressurizing time is short, and the resistance value of the sample can not deviate due to self heating because of long pressurizing action time. The voltage value under the short pressurization time can be effectively captured by adopting the peak voltmeter.
The direct current contactors are respectively adopted as the preferable scheme to control the switching of the thermistor to be tested for the PTCR and the switching of the voltage testing end.
For example, six (not limited to six) direct current contactors can be connected in series with 6 PTCR thermistors to be tested respectively, then each group of the connected direct current contactors and the PTCR thermistors to be tested are connected in parallel to form 6 test ports, and a test experiment performed at an ambient temperature can measure data of 6 sample resistors without replacing the resistors after testing one, and then heating and measuring are performed, so that the test efficiency is greatly improved, and the time spent is reduced.
As a preferable scheme, a ratio of the resistance value of the sampling resistor to the resistance value of the current thermistor to be tested at the current testing temperature is about 1%. If the resistance value of the sampling resistor is not equivalent to the resistance value of the current thermistor to be tested at the current testing temperature, the voltage division effect of the sampling resistor relative to the thermistor to be tested is not obvious, and the calculation precision of the resistance value of the thermistor to be tested is influenced.
Further, as an optimal scheme, a plurality of sampling resistors with different resistance magnitudes are configured in the voltage effect test circuit; before S2 is executed, switching of the sampling resistor connected in the voltage effect test loop is controlled according to the current test temperature, so that the ratio of the resistance value of the sampling resistor connected in the voltage effect test loop to the resistance value of the thermistor to be tested at the current test temperature is about 1%. That is, the sampling resistor can be automatically replaced according to the test condition, and the resistance value of the sampling resistor and the dynamic resistance value of the PTC thermistor to be tested keep a relatively stable ratio.
Whereas the resistance of the thermistor under test continues to increase (e.g. from 10) as the test temperature increases 3 Omega to 10 7 Ω varies), and thus, if the resistance value of the sampling resistor is constant, the test accuracy is affected. In order to ensure consistent test precision, a plurality of sampling resistors with different resistance magnitudes are configured in the voltage effect test circuit, automatic control switching (control can be realized by a chip or a single chip microcomputer) is realized in a mode of automatic switching of the sampling resistors, the sampling resistors are not required to be manually replaced according to the resistance change of the thermistor to be tested, the single chip microcomputer is used as a control center to realize automatic switching, the test efficiency and precision are improved, and errors are reduced.
Specifically, the chip is used as a control center, and firstly, the environment test temperature is collected (the environment test temperature is regulated and controlled by additional equipment), for example, a signal obtained by collecting the environment temperature by a PT100 platinum resistor is converted into a digital signal readable by a single chip microcomputer through an A/D conversion circuit, and the temperature reading is displayed on a nixie tube after calculation; and circularly comparing whether the detected temperature signal reaches a set switching value, if the detected temperature signal is greater than or equal to the set value, outputting a high level at a pin, and controlling the normally-opened end of the relay to suck through a triode driving circuit to switch the sampling resistor.
The on-off of the circuit is informed through the single chip microcomputer, and the effect that the sampling resistor can change when the magnitude of the test resistor changes is achieved. Preferably, the thermistor to be tested is programmed by a code from 10 3 Change to 10 7 The sampling resistor is switched when Ω varies, e.g. 10 for the thermistor to be tested 3 When the resistance value is omega, the code is compiled to detect that the thermistor to be detected is 10 3 ～10 4 Time, sampling resistorShould be 50 omega, and the detected thermistor is 10 4 ～10 6 Then, the resistance value of the sampling resistor is changed into 350 omega, and the thermistor to be detected is 10 6 ～10 7 When the resistance of the sampling resistor is 5050 Ω.
Example two
A PTCR thermistor zero-power voltage effect testing apparatus, as shown in fig. 3, for performing a PTCR thermistor zero-power voltage effect testing method according to a first embodiment, including: the device comprises a singlechip 10, a voltage effect test circuit 11 and a temperature control system 12;
the voltage effect test circuit 11 comprises a voltage source U, a protective resistor R0 and a sampling resistor R1 which are connected in series, the other end of the sampling resistor R1 is used for being connected with one end of the thermistor to be tested, and the other end of the voltage source V is connected with the other end of the thermistor to be tested to form a voltage effect test loop; the device also comprises a voltmeter V;
the temperature control system 12 is used for controlling the ambient temperature;
the single chip microcomputer 10 is used for performing resistance value measurement and zero power voltage effect analysis operations of the thermistors to be tested at various test temperatures and various supply voltages.
Preferably, the voltage source U is a pulse width direct current pulse of 3.5 to 4.5 mm level, and the voltmeter V is a peak voltmeter.
Preferably, the device further comprises a direct current contactor, the single chip microcomputer 10 controls switching of the thermistors to be tested by controlling opening and closing of the direct current contactors corresponding to the thermistors to be tested, and controls switching of the voltage testing ends by controlling the direct current contactors corresponding to the voltmeter.
Preferably, the ratio of the resistance value of the sampling resistor R1 to the resistance value of the current thermistor to be tested at the current test temperature is 1%.
Preferably, a plurality of sampling resistors with different resistance levels are configured in the voltage effect test circuit 11; before the single chip microcomputer 10 performs resistance value measurement of each thermistor to be tested, switching of the sampling resistor R1 connected in the voltage effect test circuit is controlled according to the current test temperature, so that the ratio of the resistance value of the sampling resistor R1 currently connected in the voltage effect test circuit to the resistance value of the thermistor to be tested at the current test temperature is 1%.
The related technical solution is the same as the first embodiment, and is not described herein again.
To better illustrate the present embodiment, the following example is now given:
as shown in fig. 2, the zero power voltage effect testing apparatus includes: a pulse voltage source, a protective resistor R1 (known), 6 PTCR thermistors to be detected, an IGBT, 8 direct current contactors, a sampling resistor, a single chip microcomputer control system (not shown in the figure) and 2 peak voltage meters;
(1) The method comprises the following steps that samples are arranged on 6 sample trays, 6 probes correspond to 6 samples respectively, after a system is powered on, a computer sends out a starting signal, a pulse voltage source is started to send out a pulse signal, and a peak voltage meter immediately enters a state to be measured;
(2) The direct current contactors corresponding to the thermistors to be tested are sequentially coded to be No. 1 to No. 6, the direct current contactors corresponding to the voltmeter are two and respectively correspond to codes of No. 7 and No. 8, when the No. 7 thermistor is connected into the test circuit, the voltmeter tests the voltages at two ends of the thermistors to be tested, and when the No. 8 thermistor is connected into the test circuit, the voltmeter tests the voltages at two ends of the thermistors to be tested and the sampling resistor. The singlechip is used for controlling the conduction of the No. 1 and No. 7 direct current contactors, and the disconnection of the other direct current contactors, so that the peak voltmeter starts to measure the instantaneous voltage values at the two ends of the No. 1 PTCR thermistor to be measured;
(3) The singlechip is used for controlling the conduction of the No. 1 and No. 8 direct current contactors and the disconnection of the other direct current contactors, so that the peak voltmeter starts to measure the instantaneous voltage values at the two ends of the sampling resistor and the No. 1 PTCR thermistor to be measured;
(4) The peak voltmeter transmits the voltage values measured twice to the computer;
(5) The computer processes data and calculates the resistance value of the thermistor to be tested of No. 1 PTCR;
(6) Switching on the No. 1 direct current contactor to the No. 2 direct current contactor, and performing the steps from (2) to (5);
(7) Respectively obtaining data in the same way, and processing the data to obtain the resistance values of the 6 PTCR thermistors to be detected;
(8) Finally, a voltage effect diagram of the thermistor to be tested for the PTCR under the current supply voltage is obtained through computer analysis;
(9) The temperature control meter and the resistance furnace play roles in quantitative temperature rise and heat preservation (as shown in figure 3) so as to help obtain the voltage effect condition of the PTCR under different environmental temperatures;
(10) After each temperature rise, firstly passing through a singlechip sampling resistance switching system as shown in fig. 4, if the temperature does not reach the set temperature, not switching, if the temperature reaches the set temperature, switching the resistance, and then carrying out the steps from (1) to (8);
as can be seen from the flow chart of FIG. 5, the system performs the above test steps according to the signal after the temperature control table reaches the set temperature point each time.
Fig. 6 shows the result of the zero power voltage effect test on the thermistor sample to be tested for PTCR according to the present invention. The test is carried out at the temperature of 25-300 ℃, and the temperature resistance characteristic curves under the voltages of 1.5V, 100V, 200V and 950V are respectively analyzed. It can be clearly seen from the V-R-T curve that at the same temperature point, the PTCR resistance value shows a trend of obvious decrease along with the increase of the loaded voltage, the PTC thermal sensitive ceramic has obvious voltage effect, and the system can completely measure the voltage effect curve and meet the design requirements.
The results of this example show that the voltage effect coefficient increases significantly with increasing temperature after the curie temperature point, i.e., the voltage effect is more significant above the curie temperature point. According to the related theory of the PTCR voltage effect, the test result basically accords with the related rule of the PTC thermal sensitive ceramic voltage effect test, and the test system designed by the invention meets the requirement of the PTCR voltage effect test.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A PTCR thermistor zero-power voltage effect test method is characterized by comprising the following steps:
s1, setting and controlling an environment temperature to be a certain temperature as a current test temperature;
s2, setting a supply voltage value of a voltage source in the voltage effect test circuit;
s3, sequentially controlling a plurality of PTCR thermistors to be tested to be connected into the voltage effect test circuit, wherein the voltage effect test circuit comprises a voltage source, a protective resistor and a sampling resistor which are connected in series, one end of the connected thermistors to be tested is connected with the sampling resistor, the other end of the connected thermistors to be tested is connected with the voltage source to form a voltage effect test loop, and the voltage effect test circuit also comprises a voltmeter; controlling the voltage source to output a voltage corresponding to the supply voltage value, controlling a voltmeter to be respectively connected to two ends of the current thermistor to be tested and the sampling resistor to correspondingly obtain two voltage values, and calculating the resistance value of the current thermistor to be tested at the current test temperature by combining the resistance value of the sampling resistor;
s4, repeatedly executing the step S2 until the resistance test of each thermistor to be tested under each preset supply voltage is completed at the current test temperature, and analyzing to obtain the zero-power voltage effect of the thermistor to be tested under the current test temperature on the basis of each resistance value of the thermistor to be tested under different supply voltages;
and S5, repeatedly executing the step S1 until the zero-power voltage effect test analysis of each thermistor to be tested at each test temperature is completed.
2. The PTCR thermistor zero-power voltage effect testing method of claim 1, wherein the voltage source is a 3.5-4.5 mm level pulse width DC pulse, and the voltmeter is a peak voltmeter.
3. The PTCR thermistor zero-power voltage effect testing method as claimed in claim 1, wherein the switching of the thermistor to be tested for PTCR and the switching of the voltage testing terminal are controlled by using DC contactors, respectively.
4. The PTCR thermistor zero-power voltage effect test method as claimed in claim 1, wherein the ratio of the resistance value of the sampling resistor to the resistance value of the current thermistor at the current test temperature is 1%.
5. The PTCR thermistor zero-power voltage effect test method as claimed in claim 4, wherein a plurality of sampling resistors with different resistance levels are configured in the voltage effect test circuit; before S2 is executed, switching of the sampling resistor connected in the voltage effect test loop is controlled according to the current test temperature, so that the ratio of the resistance value of the sampling resistor connected in the voltage effect test loop to the resistance value of the thermistor to be tested at the current test temperature is 1%.
6. A PTCR thermistor zero power voltage effects testing apparatus for performing a PTCR thermistor zero power voltage effects testing method as claimed in claim 1, comprising: the device comprises a singlechip 10, a voltage effect test circuit 11 and a temperature control system 12;
the voltage effect test circuit 11 comprises a voltage source U, a protection resistor R0 and a sampling resistor R1 which are connected in series, wherein the other end of the sampling resistor R1 is used for being connected with one end of the thermistor to be tested, and the other end of the voltage source V is connected with the other end of the thermistor to be tested to form a voltage effect test loop; the device also comprises a voltmeter V;
the temperature control system 12 is used for controlling the ambient temperature;
the single chip microcomputer 10 is used for performing resistance value measurement and zero power voltage effect analysis operations of the thermistors to be tested at various test temperatures and various supply voltages.
7. A PTCR thermistor zero-power voltage effect testing device as claimed in claim 6, wherein the voltage source U is a 3.5-4.5 mm level pulse width DC pulse, and the voltmeter V is a peak voltmeter.
8. The PTCR thermistor zero-power voltage effect testing device according to claim 6, further comprising a DC contactor, wherein the single chip microcomputer 10 controls switching of the thermistor to be tested by controlling opening and closing of the DC contactor corresponding to each thermistor to be tested, and controls switching of the voltage testing terminal by controlling the DC contactor corresponding to the voltmeter.
9. A PTCR thermistor zero-power voltage effect test device as claimed in claim 6, wherein the ratio of the resistance value of the sampling resistor R1 to the resistance value of the thermistor currently to be tested at the current test temperature is 1%.
10. The PTCR thermistor zero-power voltage effect test method according to claim 6, wherein a plurality of sampling resistors with different resistance levels are configured in the voltage effect test circuit 11; before the single chip microcomputer 10 performs resistance value measurement of each thermistor to be tested, switching of the sampling resistor R1 connected in the voltage effect test circuit is controlled according to the current test temperature, so that the ratio of the resistance value of the sampling resistor R1 currently connected in the voltage effect test circuit to the resistance value of the thermistor to be tested at the current test temperature is 1%.
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| CN117870912A (en) * | 2024-03-11 | 2024-04-12 | 江苏新林芝电子科技股份有限公司 | Method and device for measuring maximum current of PTC thermosensitive element |
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| CN117870912A (en) * | 2024-03-11 | 2024-04-12 | 江苏新林芝电子科技股份有限公司 | Method and device for measuring maximum current of PTC thermosensitive element |
| CN117870912B (en) * | 2024-03-11 | 2024-05-31 | 江苏新林芝电子科技股份有限公司 | Method and device for measuring maximum current of PTC thermosensitive element |
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