CN115747753B - TFE mask cleaning-free structure and process method - Google Patents
TFE mask cleaning-free structure and process method Download PDFInfo
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- CN115747753B CN115747753B CN202211383809.8A CN202211383809A CN115747753B CN 115747753 B CN115747753 B CN 115747753B CN 202211383809 A CN202211383809 A CN 202211383809A CN 115747753 B CN115747753 B CN 115747753B
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- 230000008569 process Effects 0.000 title claims abstract description 48
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- 239000000126 substance Substances 0.000 claims abstract description 8
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- 238000009413 insulation Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 107
- 238000007641 inkjet printing Methods 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 9
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910004205 SiNX Inorganic materials 0.000 claims description 8
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- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
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- 230000003647 oxidation Effects 0.000 abstract description 24
- 238000007254 oxidation reaction Methods 0.000 abstract description 24
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- 238000004026 adhesive bonding Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- 229920000642 polymer Polymers 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a TFE mask cleaning-free structure and a process method, and relates to the technical field of film packaging. The TFE mask cleaning-free structure includes: the interface protection layer is formed above the TFE mask and used for protecting the flatness of the surface of the TFE mask and preventing the corrosion and damage of the subsequent process to the surface of the TFE mask from causing precision deviation; and the stripping layer is formed above the interface protection layer, is high-temperature resistant, stable in chemical property, is used for insulation, and can be stripped under the irradiation of laser or under the action of etching liquid. The TFE mask cleaning-free structure and the process method provided by the invention have the advantages that the TFE mask anodic oxidation process is saved, a large amount of manufacturing cost is saved, and the pollution of cleaning waste to the environment is avoided.
Description
Technical Field
The invention relates to the technical field of film packaging, in particular to a TFE mask cleaning-free structure and a process method.
Background
In the Organic LIGHT EMITTING Diode (OLED) display, the technology has the characteristics of self-luminescence, low power consumption, wide visual angle, high response speed, ultra-light and ultra-thin performance, good shock resistance and the like, and the OLED display can realize the characteristics of flexibility, foldability, bending and the like by adopting a film to package the OLED device, and is widely applied to the field of flexible display.
The thin film packaging technology (Thin Film Encapsulastion) is called TFE for short, the TFE technology is a technology for protecting the organic EL by sequentially preparing 3-5 layers of staggered coverage to isolate water and oxygen above an organic EL substrate through deposition Barrierlayer (isolation layer) and Bufferlayer (flat layer) after evaporation of the organic EL, wherein a PECVD (chemical vapor deposition) machine is mainly used for depositing an inorganic thin film such as silicon nitride in TFE (ThinFilm Encapsulation) packaging to play a role of blocking water and oxygen, and an IJP (ink jet printing) machine is mainly used for coating the organic thin film such as high molecular polymer, resin and the like on Bufferlayer (flat layer) to cover the defects of the inorganic layers, so that planarization is realized, stress among the inorganic layers can be released, and flexible packaging is realized.
In the process of preparing the TFE film packaging structure, a 2-3 inorganic/organic laminated structure is adopted, each layer of inorganic film is deposited on a PECVD (chemical vapor deposition) machine, a metal mask is needed for shielding a region (binding region) where the film is not required to be deposited, the TFE mask is usually made of indium tile alloy, and because the PECVD (chemical vapor deposition) is mainly made of an RF power supply to activate the activity of reaction particles, the upper electrode and the lower electrode of the cavity are mainly made of ceramic structures to prevent abnormal discharge, and therefore, a layer of Al 2O3 is often deposited on the surface of the TFE mask to carry out anodic oxidation on the surface.
The inorganic film accumulated on the TFE metal mask is thicker along with the longer deposition time on the surface of the TFE mask, and the TFE mask needs to be manually assembled and disassembled and sent out for periodic cleaning, so that the cleaning cost is high, and the development of an environment-friendly society is influenced by the liquid cost of liquid medicine cleaning.
Disclosure of Invention
The invention aims to solve the technical problem of providing a TFE mask cleaning-free structure and a process method, wherein an interface protection layer is used for replacing an anodic oxidation layer, so that the process of anodizing the TFE mask is saved, the cost of cleaning a TFE metal mask is avoided through a stripping layer, a large amount of manufacturing cost is saved, and the pollution of cleaning waste to the environment is avoided.
In a first aspect, the present invention provides a TFE mask cleaning-free structure comprising:
The interface protection layer is formed above the TFE mask and used for protecting the flatness of the surface of the TFE mask and preventing the corrosion and damage of the subsequent process to the surface of the TFE mask from causing precision deviation;
And the stripping layer is formed above the interface protection layer, is high-temperature resistant, stable in chemical property, is used for insulation, and can be stripped under the irradiation of laser or under the action of etching liquid.
Further, the interface protection layer comprises a SiNx layer, a SiO 2 layer and a stack of SiNx and SiO 2.
Further, the thickness of the interface protection layer ranges from 2 um to 6um.
Further, the release layer includes a PI layer and a PEN layer.
Further, the thickness of the peeling layer ranges from 2 to 6um.
In a second aspect, the present invention provides a TFE mask cleaning-free process, applied to the TFE mask cleaning-free structure of the first aspect, the method comprising:
firstly forming an interface protection layer on a TFE mask, and then printing a stripping layer on the TFE mask;
When the TFE shade accumulates a film with a certain thickness, the TFE shade is manually disassembled, the disassembled shade is placed under a laser stripping machine for laser stripping, after the stripping process, the stripping layer is carbonized, alcohol is adopted to clean the surface of the shielding plate, then a layer of stripping layer is printed on the TFE shade again, and the machine is repeatedly used after solidification.
Further, the interface protection layer is formed by chemical vapor deposition; the release layer is formed by screen printing, a coater, or ink jet printing; the laser energy power is 1-10W; the alcohol is alcohol with the purity of 98 percent.
In a third aspect, the present invention also provides another TFE mask no-clean process method, applied to the TFE mask no-clean structure of the first aspect, the method including:
firstly, depositing an interface protective layer on a TFE mask, and then printing a stripping layer on the TFE mask;
When a film with a certain thickness is accumulated on the TFE shade, the TFE shade is manually disassembled, the disassembled shade is transferred into an etching groove, and is soaked by adopting acid etching solution, and the stripping layer is dissolved in the acid solution so that the inorganic film accumulated on the surface is wholly stripped off, thereby avoiding cleaning; then, a release layer is printed on the TFE mask again, and the machine is repeatedly used after solidification.
Further, the interface protection layer is formed by chemical vapor deposition; the release layer is formed by screen printing, a coater, or ink jet printing; the acidic etching solution comprises nitric acid, acetic acid and oxalic acid.
The invention has the following advantages:
The interface protection layer is used for replacing the anodic oxidation layer, so that the process of anodic oxidation of the TFE mask is saved, the cost of cleaning the TFE metal mask is saved through the stripping layer, the cost of cleaning the TFE metal mask can be saved, the surface anodic oxidation treatment of the TFE mask is not needed to be regularly carried out, the process of anodic oxidation of the TFE mask is saved, the cost of anodic oxidation is saved, a large amount of manpower and material resources are saved for a company, the time for cleaning the surface is saved, the pollution of cleaning waste to the environment is avoided, the production efficiency of a machine is improved, and the manufacturing cost is saved.
Drawings
The invention will be further described with reference to examples of embodiments with reference to the accompanying drawings.
FIG. 1 is a schematic view of a TFE mask structure in the prior art;
FIG. 2 is a flow chart of TFE mask cleaning in the prior art;
FIG. 3 is a schematic diagram of a first embodiment of the present invention;
FIG. 4 is a flow chart of a second embodiment of the present invention;
fig. 5 is a schematic flow chart of a third embodiment of the present invention.
Detailed Description
The embodiment of the invention provides a TFE mask cleaning-free structure and a process method, wherein an interface protection layer is used for replacing an anodic oxidation layer, so that the process of anodizing the TFE mask is saved, the cost of cleaning a TFE metal mask is saved through a stripping layer, a large amount of manufacturing cost is saved, and the pollution of cleaning waste to the environment is avoided.
The technical scheme in the embodiment of the invention has the following overall thought:
The conventional TFE mask is made of Invar alloy as shown in FIG. 1, and is designed with a hollowed-out area and a non-hollowed-out area, wherein the surface of the non-hollowed-out area is required to be sputtered with a layer of Al 2O3 film by PVD deposition. Al 2O3 plays a role in insulating and isolating, so that abnormal discharge of Invar alloy between upper and lower electrodes of an RF power supply is prevented, the anodic oxidation process is performed for Cheng Shicheng hours, the sputtering process is difficult, and the mass production efficiency is low. After a period of use, the TFE mask will deposit a thick inorganic thin film (SiNx, siNC) on the surface, which is prone to Peeling and contamination of the chamber after deposition, thus requiring periodic cleaning.
The conventional TFE mask cleaning step is shown in fig. 2, wherein the mask surface is subjected to manual disassembly, logistics out cleaning, deionized water cleaning is usually adopted in the cleaning process, liquid medicine soaking, ultrasonic cleaning, drying in a drying furnace, surface anodic oxidation treatment, and logistics return to a factory for on-line. The waste liquid generated by liquid medicine cleaning has great influence on the environment, long surface anodizing treatment time, low efficiency and high cost.
Accordingly, the present invention provides a cleaning-free method for TFE masks: firstly, carrying out interface modification on a TFE mask, and depositing an interface protection layer on the TFE mask, wherein the interface protection layer not only protects the flatness of the surface of the TFE mask, but also prevents the precision deviation of the TFE mask caused by corrosion and damage to the surface of the TFE mask by subsequent processes; then, a layer of organic matter is coated on the TFE mask as a stripping layer, the organic matter is high-temperature resistant and stable in chemical property, is easy to strip under the action of laser irradiation or etching solution, and the organic film also plays a role of isolating and insulating to replace anodic oxidation with complex process.
Example 1
This embodiment provides a TFE mask cleaning-free structure, as shown in fig. 3, comprising:
The interface protection layer is formed above the TFE mask and used for protecting the flatness of the surface of the TFE mask and preventing the corrosion and damage of the subsequent process to the surface of the TFE mask from causing precision deviation;
And the stripping layer is formed above the interface protection layer, is high-temperature resistant, stable in chemical property, is used for insulation, and can be stripped under the irradiation of laser or under the action of etching liquid.
In one embodiment:
The interfacial protection layer is deposited by PECVD (chemical vapor deposition) on the TFE mask; the material of the interface protective layer is not limited to SiNx, siO 2, or a laminate of both, and the thickness thereof is in the range of 2 to 6um, preferably 4um. The interface protection layer can protect the flatness of the surface of the TFE mask and prevent the precision deviation of the TFE mask caused by corrosion and damage of the subsequent process to the surface.
The release layer is formed by printing a layer of organic material on a TFE mask by means of, but not limited to, screen printing, coater, IJP (ink jet printing); the organic matter is not limited to PI (polyimide), PEN (polyethylene terephthalate); the thickness of the organic matter is 2-6 um, preferably 4um. The organic matter is high-temperature resistant, stable in chemical property, easy to peel under the irradiation of laser or under the action of etching solution, and meanwhile, the organic film also plays a role in isolating and insulating, can replace anodic oxidation with complex process, and can avoid the problems of long preparation time Cheng Shicheng of anodic oxidation, high sputtering process difficulty and low mass production efficiency.
Example two
The embodiment provides a TFE mask cleaning-free process method, which is applied to the TFE mask cleaning-free structure of the embodiment one, as shown in fig. 4, and includes:
firstly forming an interface protection layer on a TFE mask, and then printing a stripping layer on the TFE mask;
When the TFE shade accumulates a film with a certain thickness, the TFE shade is manually disassembled, the disassembled shade is placed under a laser stripping machine for laser stripping, after the stripping process, the stripping layer is carbonized, alcohol is adopted to clean the surface of the shielding plate, then a layer of stripping layer is printed on the TFE shade again, and the machine is repeatedly used after solidification.
In one specific implementation:
first, an interface modification is performed on the TFE mask, and an interface protection layer is deposited on the TFE mask by PECVD (chemical vapor deposition), wherein the material of the interface protection layer is not limited to SiNx, siO2, or a laminate of the two, and the thickness of the interface protection layer ranges from 2 um to 6um, preferably 4um. The interface protection layer not only protects the flatness of the surface of the TFE mask, but also prevents the corrosion and damage of the subsequent process to the surface of the TFE mask from causing the precision deviation of the TFE mask. Then, a layer of organic matter, not limited to PI (polyimide), PEN (polyethylene terephthalate) is printed as a release layer on the TFE mask by means of, but not limited to, screen printing, coater, IJP (ink jet printing), the organic matter having a thickness of 2 to 6um, preferably 4um. The organic matter has high temperature resistance and stable chemical property, is easy to peel under laser irradiation, and the organic film also plays a role of isolating and insulating to replace anodic oxidation with complex process, the anodic oxidation is prepared for Cheng Shicheng hours, the sputtering process is difficult, and the mass production efficiency is low.
When the TFE mask coated with the stripping layer is used for a period of time, an inorganic film with a certain thickness is accumulated, the TFE mask is required to be disassembled manually, the disassembled mask is placed under a laser stripping machine (LLO) for laser stripping, the laser energy power is 1-10W, preferably the laser energy power is 3W, and the stripping layer is carbonized after the stripping process of the laser stripping machine (LLO); cleaning the part on the surface of the shielding plate by adopting alcohol with the purity of 98 percent, then putting a TFE mask into a Coater or an IJP machine to carry out PI gluing or dispensing, printing a layer of stripping layer again, and repeating the machine after solidification for recycling. The method avoids the process of periodical sending and cleaning of the shade, saves the cost of anodic oxidation, saves a great amount of manpower and material resources for companies, saves the time of sending and cleaning, and improves the production efficiency of the machine.
Example III
The invention also provides another TFE mask cleaning-free process method, which is applied to the TFE mask cleaning-free structure of the first embodiment, as shown in FIG. 5, and comprises the following steps:
firstly, depositing an interface protective layer on a TFE mask, and then printing a stripping layer on the TFE mask;
When a film with a certain thickness is accumulated on the TFE shade, the TFE shade is manually disassembled, the disassembled shade is transferred into an etching groove, and is soaked by adopting acid etching solution, and the stripping layer is dissolved in the acid solution so that the inorganic film accumulated on the surface is wholly stripped off, thereby avoiding cleaning; then, a release layer is printed on the TFE mask again, and the machine is repeatedly used after solidification.
In one specific implementation:
first, an interface modification is performed on the TFE mask, and an interface protection layer is deposited on the TFE mask by PECVD (chemical vapor deposition), wherein the material of the interface protection layer is not limited to SiNx, siO2, or a laminate of the two, and the thickness of the interface protection layer ranges from 2 um to 6um, preferably 4um. The interface protection layer not only protects the flatness of the surface of the TFE mask, but also prevents the corrosion and damage of the subsequent process to the surface of the TFE mask from causing the precision deviation of the TFE mask. Then, a layer of organic matter, not limited to PI (polyimide), PEN (polyethylene terephthalate) is printed as a release layer on the TFE mask by means of, but not limited to, screen printing, coater, IJP (ink jet printing), the organic matter having a thickness of 2 to 6um, preferably 4um. The organic matter has high temperature resistance and stable chemical property, is easy to peel under laser irradiation, and the organic film also plays a role of isolating and insulating to replace anodic oxidation with complex process, the anodic oxidation is prepared for Cheng Shicheng hours, the sputtering process is difficult, and the mass production efficiency is low.
When the TFE mask coated with the stripping layer is used for a period of time, inorganic films with a certain thickness are accumulated, the TFE mask is required to be disassembled manually, the disassembled mask is transferred into an etched tank, an acid etching solution is used for soaking, the acid etching solution is not limited by nitric acid, acetic acid, oxalic acid and the like, the stripping layer is dissolved in the acid solution, the inorganic films accumulated on the surface of the stripping layer are wholly fallen into the solution, the inorganic films are wholly fallen into the solution due to no support of the stripping layer, the purpose of cleaning after delivery is achieved, then the TFE mask is put into a screen printing machine again, a stripping layer is printed again by PI gluing or dispensing in an IJP machine, and the machine is repeatedly started after solidification and is repeatedly used. The PECVD (chemical vapor deposition), etching tank and screen printing are all existing equipment in device preparation, so TFE mask cleaning does not need to leave a factory, and the mask is automatically cleaned in a self-developed scheme.
According to the invention, the interface protection layer is used for replacing the anodic oxidation layer, so that the process of anodic oxidation of the TFE mask is saved, the cost of cleaning the TFE metal mask is saved through the stripping layer, the cost of cleaning the TFE metal mask can be saved, the surface anodic oxidation treatment of the TFE mask is not needed to be regularly carried out, the process of anodic oxidation of the TFE mask is saved, the cost of anodic oxidation is saved, a large amount of manpower and material resources are saved for a company, the time of cleaning the TFE mask is saved, the environmental pollution caused by cleaning waste is avoided, the production efficiency of a machine is improved, and the manufacturing cost is saved.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that the specific embodiments described are illustrative only and not intended to limit the scope of the invention, and that equivalent modifications and variations of the invention in light of the spirit of the invention will be covered by the claims of the present invention.
Claims (9)
1. A TFE mask cleaning-free structure comprising:
The interface protection layer is formed above the TFE mask and used for protecting the flatness of the surface of the TFE mask and preventing the corrosion and damage of the subsequent process to the surface of the TFE mask from causing precision deviation;
And the stripping layer is formed above the interface protection layer, is high-temperature resistant, stable in chemical property, is used for insulation, and can be stripped under the irradiation of laser or under the action of etching liquid.
2. The TFE mask cleaning-free structure of claim 1, wherein: the interface protection layer comprises a SiNx layer, a SiO 2 layer and a stack of SiNx and SiO 2.
3. The TFE mask no-clean structure of claim 1 or 2, wherein: the thickness range of the interface protection layer is 2-6 um.
4. The TFE mask cleaning-free structure of claim 1, wherein: the release layer includes a PI layer and a PEN layer.
5. The TFE mask no-clean structure of claim 1 or 4, wherein: the thickness of the stripping layer ranges from 2 um to 6um.
6. A TFE mask no-clean process for a TFE mask no-clean structure as recited in any of claims 1-5, the process comprising:
firstly forming an interface protection layer on a TFE mask, and then printing a stripping layer on the TFE mask;
When the TFE shade accumulates a film with a certain thickness, the TFE shade is manually disassembled, the disassembled shade is placed under a laser stripping machine for laser stripping, after the stripping process, the stripping layer is carbonized, alcohol is adopted to clean the surface of the shielding plate, then a layer of stripping layer is printed on the TFE shade again, and the machine is repeatedly used after solidification.
7. The TFE mask cleaning-free process of claim 6, wherein: the interface protection layer is formed by chemical vapor deposition; the release layer is formed by screen printing, a coater, or ink jet printing; the laser energy power is 1-10W; the alcohol is alcohol with the purity of 98 percent.
8. A TFE mask no-clean process for a TFE mask no-clean structure as recited in any of claims 1-5, the process comprising:
firstly, depositing an interface protective layer on a TFE mask, and then printing a stripping layer on the TFE mask;
When a film with a certain thickness is accumulated on the TFE shade, the TFE shade is manually disassembled, the disassembled shade is transferred into an etching groove, and is soaked by adopting acid etching solution, and the stripping layer is dissolved in the acid solution so that the inorganic film accumulated on the surface is wholly stripped off, thereby avoiding cleaning; then, a release layer is printed on the TFE mask again, and the machine is repeatedly used after solidification.
9. The TFE mask cleaning-free process of claim 8, wherein: the interface protection layer is formed by chemical vapor deposition; the release layer is formed by screen printing, a coater, or ink jet printing; the acidic etching solution comprises nitric acid, acetic acid and oxalic acid.
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| WO2021096115A1 (en) * | 2019-11-11 | 2021-05-20 | (주)더숨 | Mask for manufacturing oled, and oled manufacturing method |
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