CN115692510A - Two-dimensional magnetic sensor based on two-dimensional electronic air channel structure and preparation method thereof - Google Patents
Two-dimensional magnetic sensor based on two-dimensional electronic air channel structure and preparation method thereof Download PDFInfo
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Abstract
A two-dimensional magnetic sensor based on a two-dimensional electronic air channel structure and a preparation method thereof belong to the technical field of semiconductor sensors. The technical scheme is as follows: the method comprises the steps that a buffer layer, a channel layer and a barrier layer are sequentially grown on a substrate, the channel layer and the barrier layer form a heterojunction structure layer, a contact interface of the channel layer and the barrier layer is induced by polarized charges to generate two-dimensional electron gas, a magnetostrictive layer is arranged above the barrier layer, an electrode Sx1, an electrode Sx2, an electrode Sy1 and an electrode Sy2 are arranged above the magnetostrictive layer, the electrode Sx1, the electrode Sx2, the electrode Sy1 and the electrode Sy2 all extend to the heterojunction structure layer from the position above the magnetostrictive layer, the electrode Sx1 and the electrode Sx2 are symmetrically arranged, and the electrode Sy1 and the electrode Sy2 are symmetrically arranged. Has the beneficial effects that: the two-dimensional magnetic sensor based on the two-dimensional electronic air channel structure regulates and controls the polarization effect of a single III-V group semiconductor heterojunction magnetic sensor, can realize higher sensitivity when measuring a magnetic field parallel to the direction of the device in a severe environment, and has a simple structure, reduced device volume and easy integration.
Description
Technical Field
The invention belongs to the technical field of semiconductor sensors, and particularly relates to a two-dimensional magnetic sensor based on a two-dimensional electron gas channel structure and a preparation method thereof.
Background
The novel intelligent material is usually two or more materials with physical properties of electricity, magnetism, optics, thermology, acoustics and the like, and the characteristic of coupling of various physical properties can meet the requirements of modern high and new technical equipment and novel intelligent devices. Such as: magnetostrictive and semiconductor materials that provide magneto-electro-optic switching; piezoelectric materials and semiconductor materials are widely applied to the field of deep space exploration, semiconductor power devices are widely applied to space satellites for energy conversion due to the fact that the semiconductor power devices have large temperature ranges and extreme working environments, and the piezoelectric materials are widely applied to sensors and transducers due to the fact that the piezoelectric materials are excellent in magnetoelectric conversion capacity. Therefore, the development of novel intelligent material devices capable of being used in severe environments has great application significance.
At present, magnetic sensors with a large share in the market are generally made of traditional materials such as silicon (Si), germanium (Ge), and the like, but the first generation semiconductor materials mainly made of materials such as silicon (Si), germanium (Ge), and the like are limited by the disadvantages of low energy gap and low electron mobility, and cannot be applied in high-frequency and high-power environments. The III-V group semiconductor material mainly comprising gallium arsenide (GaAs), indium arsenide (InAs), gallium nitride (GaN) and indium antimonide (InSb) has high electron mobility (the electron mobility of GaAs and InAs can reach 9000cm respectively) 2 /(V·s)、40000cm 2 V · s), they have excellent electron transport performance under low field and high field, and are ideal channel materials of ultra-high speed, low power consumption sensing devices, magnetic sensors prepared from heterojunction materials thereof have high concentration of two-dimensional electron gas (2 DEG) at heterojunction interfaces, and the device sensitivity is high.
Meanwhile, the third-generation semiconductor material GaN has the advantages of large forbidden band width, high critical breakdown electric field and high saturated electron drift velocity, can stably work in the temperature range of 400 ℃, and has good material advantages and wide application prospect in the aspect of preparing high-temperature magnetic sensors. Besides, the GaN semiconductor material has unique piezoelectricity and can be used as a piezoelectric layer of a device, the generated AlGaN/GaN heterojunction structure generates 2DEG with higher mobility at a heterojunction interface due to spontaneous polarization and piezoelectric polarization effect, and a magnetic sensor prepared by the method has higher sensitivity when measuring a magnetic field perpendicular to the direction of the device based on the Hall effect.
In the existing III-V group semiconductor heterojunction (typically, alGaN/GaN heterojunction) magnetic sensor, because of spontaneous polarization of materials and piezoelectric polarization effect, 2DEG generated by polarization charge induction exists in a potential well at a heterojunction interface at high density, when a magnetic field perpendicular to the surface of the device is measured, the 2DEG can move freely in a two-dimensional space, a potential difference is generated between two corresponding electrodes, the device has high sensitivity, but when the magnetic field parallel to the surface of the device is measured, because of the Hall effect, a longitudinal electric field exists in the direction perpendicular to a 2DEG channel, electrons in the channel are bound in the longitudinal electric field, and cannot move freely in the perpendicular direction, so that the current and the voltage sensed by the sensor are reduced, and the sensitivity of the sensor is reduced; meanwhile, the magnetic sensor has more electrodes, has the defect of larger volume and is not beneficial to integration.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a two-dimensional magnetic sensor based on a two-dimensional electronic air channel structure, which is a novel structure combining a III-V group semiconductor heterojunction and a magnetostrictive material (typically Terfenol-D) as a two-dimensional magnetic sensor for measuring a magnetic field parallel to the surface of a device in a severe environment. The tensile stress (strain) generated by the magnetostrictive effect of the magnetostrictive material under the action of a magnetic field can offset the compressive stress generated in the process of preparing the III-V group semiconductor heterojunction, and the polarization effect of the heterojunction is reduced, so that the concentration of the 2DEG is greatly changed, and the sensitivity of the magnetic sensor is improved. In addition, 4 electrodes are respectively used for replacing a plurality of electrodes to realize the detection of a two-dimensional magnetic field parallel to the surface of the device, so that the stable work of the sensor is realized while the volume of the device is reduced.
The invention discloses a two-dimensional magnetic sensor based on a two-dimensional electron gas channel structure, which is used for detecting a magnetic field parallel to the surface of a device.
The technical scheme is as follows:
a two-dimensional magnetic sensor based on a two-dimensional electron gas channel structure, comprising: the electrode Sx1, the electrode Sx2, the electrode Sy1 and the electrode Sy2 are arranged symmetrically from the upper part of the magnetostrictive layer, and the electrode Sx1 and the electrode Sx2 are arranged symmetrically, and the electrode Sy1 and the electrode Sy2 are arranged symmetrically.
Further, the substrate is a silicon, silicon carbide, sapphire or other substrate which is the same material as the channel layer.
Further, the buffer layer is of an AlN or GaN or superlattice structure, and the thickness of the buffer layer is 10-100 nm.
Furthermore, the channel layer is of a thin film structure formed by GaN, gaAs, inSb, inAs or other III-V group semiconductors, and the thickness of the channel layer is 0.1-50 μm.
Furthermore, the barrier layer is of AlGaN, inGaAs, alGaAs, inAlN or other film structure capable of forming heterojunction with III-V group semiconductor, and the thickness of the barrier layer is 5-100 nm.
Furthermore, the magnetostrictive layer is a film structure made of terbium dysprosium iron alloy (GMM, terfenol-D), brittleness-improved terbium dysprosium iron alloy (TD-plus), iron gallium alloy (Galfenol), and other magnetostrictive materials, and the thickness of the magnetostrictive layer is 0.05-5 mu m.
Further, the shape of the electrode Sx1, the electrode Sx2, the electrode Sy1, the electrode Sy2 is rectangular or trapezoidal.
The invention also comprises a preparation method of the two-dimensional magnetic sensor based on the two-dimensional electronic air channel structure, which comprises the following steps:
s1, substrate preparation: preparing a substrate, cleaning the substrate material, and removing pollutants on the surface of the substrate;
s2, epitaxial growth: epitaxially growing a buffer layer and a heterojunction structure layer by any one of a metal organic compound chemical vapor deposition method, a molecular beam epitaxy method and a hydride vapor phase epitaxy method, wherein the thickness of the generated channel layer is 0.1-50 mu m, the thickness of a barrier layer on the channel layer is 5-100 nm, the buffer layer is one of AIN, gaN or a superlattice structure, and the thickness of the buffer layer is 10-100 nm;
s3, etching the table top: after photoetching and developing, etching the sample which grows well in the epitaxial mode by using an inductive coupling plasma etching method, wherein the etching depth of the table top is 50-800 nm;
s4, growing a magnetostrictive layer: preparing a magnetostrictive film by adopting any one of a magnetron sputtering method, a molecular beam epitaxy method, an ion beam sputtering method, a vacuum thermal evaporation method, an ion plating method and a flash evaporation method, wherein the thickness of the generated magnetostrictive film is 0.05-5 mu m;
s5, shallow etching: after photoetching and developing the sample on which the magnetostrictive layer grows, etching by using an inductively coupled plasma etching method, wherein the etching depth is 0.05-5.1 mu m;
s6, electrode ohmic contact manufacturing: after photoetching and developing, depositing composite metal by using an electron beam evaporation system, and then forming good ohmic contact by using a rapid annealing process;
s7, surface passivation: depositing a dielectric layer by adopting any one of a plasma enhanced chemical vapor deposition method, a magnetron sputtering method, an atomic layer deposition method and an electron beam evaporation method to perform device passivation;
s8, opening a window: and photoetching and corroding the passivation layer at the electrode to form a window, and depositing metal at the electrode by adopting any one of a magnetron sputtering method, an electron beam evaporation method and a thermal evaporation method to manufacture a bonding pad and lead.
Further, in step S2, an AlN insertion layer of 0.5 to 2nm is grown between the barrier layer and the channel layer to increase the flatness between the two layers, and to increase the concentration and mobility of the two-dimensional electron gas.
Further, in step S3, the heterojunction is etched by using an inductively coupled plasma etching method, the etching power is 100-1000W, and 150-500 sccm Cl-based gas is introduced for etching, so as to finally form an etching depth of about 50-800 nm.
The beneficial effects of the invention are:
the two-dimensional magnetic sensor based on the two-dimensional electron gas channel structure is a novel III-V group semiconductor heterojunction/magnetostrictive material composite structure magnetic sensor, and the technical scheme has the following beneficial effects:
1) The III-V group semiconductors have high electron mobility, have excellent electron transport performance under low field and high field, are ideal channel materials of ultra-high-speed and low-power consumption sensing devices, and magnetic sensors prepared from heterojunction materials of the III-V group semiconductors have high-concentration 2DEG at heterojunction interfaces and are high in device sensitivity;
2) The gallium system material is a III-V group semiconductor material (typically GaN) which is widely applied at present, has a large forbidden band width and a large breakdown electric field, and the prepared magnetic sensor can stably work in a high-temperature (higher than 400 ℃), high-voltage (lower than 650V) and high-radiation environment;
3) The magnetostrictive strain amount generated by magnetostrictive materials (typically Terfenol-D) is hundreds of times or even higher than that of the traditional materials, the linear strain response interval for a magnetic field is large, the response speed is high, and the magnetostrictive material has the characteristic of outputting large strain under a low magnetic field;
4) The magnetostrictive strain of the magnetostrictive material has a modulation effect on the polarization of the III-V group semiconductor material, and the polarization effect of the barrier layer is changed under the action of the axial magnetic field, so that the carrier transmission, energy level conversion and recombination processes of the two-dimensional electron gas channel are influenced, and the sensitivity of the magnetic sensor is improved;
5) The device has simple structure, only uses 4 electrodes to complete the detection of the magnetic field on the surface of the parallel device, and has low process cost, small volume and easy integration. The novel composite structure magnetic sensor manufactured by the scheme realizes high sensitivity measurement on a magnetic field parallel to the surface of a device, the sensitivity can reach 4.45V/T to the maximum, the measurement magnetic field range is large, the measurement of a 0-320 mT magnetic field can be realized in the direction parallel to the surface of the device, the development of a 3D magnetic sensor is expected to be promoted, and the novel composite structure magnetic sensor is widely applied to the field of miniature and nano sensors.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the present invention will be described in detail below with reference to the accompanying drawings and detailed embodiments, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor. Wherein:
FIG. 1 is a schematic structural diagram of a two-dimensional magnetic sensor based on a two-dimensional electron gas channel structure according to the present invention;
FIG. 2 is a side view and a top view of a two-dimensional magnetic sensor based on a two-dimensional electron gas channel structure according to the present application;
FIG. 3 is a process flow diagram of an embodiment of the present invention;
FIG. 4 is a graph of experimental characteristics of a two-dimensional embodiment of a two-dimensional magnetosensitive sensor based on a two-dimensional electron gas channel structure, according to the present invention, the 2DEG concentration at the AlGaN/GaN heterojunction interface is varied by the magnetostriction strain epsilon of Terfenol-D material H A variation graph of (2);
fig. 5 is a graph of experimental characteristics-a graph of device magnetic field detectability characterization for a specific embodiment of a two-dimensional magnetic sensor based on a two-dimensional electron gas channel structure according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention. The two-dimensional magnetic sensor based on the two-dimensional electron gas channel structure and the preparation method thereof are further described with reference to the accompanying drawings 1 to 5.
Example 1
In order to solve the technical problems of the background art and realize a magnetic sensor which has higher sensitivity and smaller volume and can measure the magnetic field on the surface of a parallel device, the invention provides a technical scheme of a specific embodiment of a two-dimensional magnetic sensor based on a two-dimensional electronic air channel structure. The device structure is schematically shown in fig. 1. In embodiment 1 of the present invention, the substrate is a silicon (Si) substrate, and the buffer layer and the AlGaN/GaN heterojunction structure are epitaxially grown thereon, wherein the buffer layer may be AlN or GaN (10 to 100nm in thickness), the GaN is a channel layer (0.1 to 50 μm in thickness), an AlGaN barrier layer (5 to 100nm in thickness) is formed on the channel layer, and the material composition in the barrier layer is not limited. The AlGaN barrier layer is provided with a Terfenol-D magnetostrictive layer (the thickness is 0.05-5 mu m). Electrodes Sx1 and Sx2 are symmetrical to electrodes Sy1 and Sy2, the shape of the electrodes is not specially limited, and the electrodes can be rectangular trapezoids and the like. The electrodes need to form a good ohmic contact with the semiconductor material.
The working principle of the two-dimensional magnetic sensor based on the two-dimensional electron gas channel structure is shown in figure 2, the input and the output of the two-dimensional magnetic sensor are the same loop, and a certain current I is applied between electrodes Sx1 and Sx2 or between Sy1 and Sy2 bias Detecting the output voltage V between Sx1 and Sx2 or Sy1 and Sy2 under the action of the magnetic field out . In embodiment 1 of the present invention, an AlGaN/GaN heterojunction material is used as a piezoelectric layer to form a potential well at a heterojunction interface, and two-dimensional electron gas with high mobility is accumulated, a terfenol-D material is used as a magnetostrictive layer, and strain is generated in a physical dimension by responding to an axial magnetic field, and the strain is transmitted to the piezoelectric layer to change a polarization charge density at the AlGaN/GaN heterojunction interface, so that the concentration of the two-dimensional electron gas changes, and a voltage change detected by a device is relatively larger than a voltage change of a iii-v group semiconductor heterojunction vertical hall sensor, and the sensitivity is high.
The two-dimensional magnetic sensor based on the two-dimensional electron gas channel structure regulates and controls the polarization effect of a single III-V group semiconductor heterojunction magnetic sensor, can realize higher sensitivity when measuring a magnetic field parallel to the direction of a device, has a simple structure, reduces the volume of the device, and is easy to integrate.
The implementation process of the target device of the application of the invention is explained as follows:
1) Substrate preparation: preparing a substrate, cleaning the substrate material, and removing the pollutants on the surface of the substrate.
2) And (3) epitaxial growth: the AlGaN/GaN heterojunction structure and the buffer layer are epitaxially grown by any one of the methods of Metal Organic Chemical Vapor Deposition (MOCVD), molecular Beam Epitaxy (MBE) and Hydride Vapor Phase Epitaxy (HVPE), the thickness of the generated GaN channel layer is 0.1-50 mu m, the thickness of the AlGaN barrier layer on the channel layer is 5-100 nm, the buffer layer can be AIN, gaN or a superlattice structure, and the thickness is 10-100 nm.
3) Etching the table top: after photoetching and developing, the sample with good epitaxial growth is etched by utilizing inductively coupled plasma etching (ICP), and the etching depth of the table top is 50-800 nm.
4) And (3) growing a magnetostrictive layer: the Terfenol-D film is prepared by any one of a magnetron sputtering method, a molecular beam epitaxy method, an ion beam sputtering method, a vacuum thermal evaporation method, an ion plating method and a flash evaporation method, and the thickness of the generated film is 0.05-5 mu m.
5) Shallow etching: after photoetching and developing, the sample on which the magnetostrictive layer grows is etched by utilizing inductively coupled plasma etching (ICP), and the etching depth is 0.05-5.1 mu m.
6) And (3) electrode ohmic contact manufacturing: after photoetching development, the composite metal is deposited by an electron beam evaporation system, and then a good ohmic contact is formed by utilizing a rapid annealing (RTA) process.
7) Surface passivation: and depositing a dielectric layer by adopting any one of a Plasma Enhanced Chemical Vapor Deposition (PECVD), magnetron sputtering, atomic Layer Deposition (ALD) and electron beam Evaporation (EB) mode to perform device passivation.
8) Opening a window: and photoetching and corroding the passivation layer at the electrode to form a window, and depositing metal at the electrode by any one of magnetron sputtering, electron beam Evaporation (EB) and thermal evaporation to manufacture a bonding pad and lead.
The invention aims to provide a two-dimensional magnetic sensor based on a two-dimensional electron air channel structure, which can measure a magnetic field parallel to the surface of a device, has higher sensitivity, fewer electrodes and smaller volume.
The polarization effect of the III-V group semiconductor heterojunction material enables a potential well to be formed at a heterojunction interface, two-dimensional electron gas (2 DEG) with high mobility is accumulated in the potential well, when a magnetic sensor made based on the Hall effect measures a magnetic field parallel to the surface of a device, the 2DEG is influenced by a longitudinal electric field in the direction of a vertical channel and cannot move freely in the vertical direction, the voltage and the current detected by the sensor at two ends of a detection electrode are small, and the sensitivity performance of the sensor is poor, so that the invention provides the novel two-dimensional magnetic sensor based on the two-dimensional electron gas channel structure and having the III-V group semiconductor and magnetostrictive material composite structure for measuring the magnetic field parallel to the surface of the device.
A magnetic sensor made of composite magnetostrictive materials (typically Terfenol-D materials) in III-V group semiconductor heterojunction materials is not based on Hall effect any more, but utilizes the magnetostrictive effect of the magnetostrictive materials such as Terfenol-D, feGaB and the like, and the physical dimension of the magnetic sensor is changed under the action of an axial magnetic field. The magnetostrictive strain produced by the material is about one hundred times or more higher than that of the traditional material, the material can work under lower magnetic field intensity, the response speed of the strain along with the change of the magnetic field is high, and the linear strain response interval is also larger. Meanwhile, the strain of the magnetostrictive material changes the polarization effect of the III-V semiconductor heterojunction, and influences the polarization charge density at the heterojunction interface, so that the energy band structure and the electron concentration of the device are changed, the voltage and the current at the detection position of the sensor are changed considerably, and the sensitivity of the device is improved. On the other hand, the single III-V group semiconductor heterojunction magnetic sensor which is manufactured based on the Hall effect and can measure the magnetic field on the surface of the parallel device has more electrodes (typically 9 electrodes), the process cost is increased, and the volume is larger.
The invention provides a technical scheme of a novel magnetic sensor with a III-V group semiconductor heterojunction/magnetostrictive material composite structure, and the structure of the sensor is characterized in that: 1) The III-V group semiconductor has high electron mobility and excellent electron transport performance under both low and high fields, and the magnetic sensor prepared by the heterojunction material has high-concentration 2DEG at the heterojunction interface and high sensitivity; 2) The gallium system material is a III-V group semiconductor material (typically GaN) which is widely applied at present, has a large forbidden band width and a large breakdown electric field, and the prepared magnetic sensor can stably work in a high-temperature (higher than 400 ℃), high-voltage (lower than 650V) and high-radiation environment; 3) The magnetostrictive strain amount generated by magnetostrictive materials (typically Terfenol-D) is hundreds of times or even higher than that of the traditional materials, the linear strain response interval for a magnetic field is large, the response speed is high, and the magnetostrictive material has the characteristic of outputting large strain under a low magnetic field; 4) The magnetostrictive strain of the magnetostrictive material has a modulation effect on the polarization of the III-V semiconductor material, and under the action of an axial magnetic field, the polarization effect of the barrier layer is changed, so that the carrier transmission, energy level conversion and recombination processes of a two-dimensional electronic gas channel are influenced, and the sensitivity of the magnetic sensor is improved; 5) The device has simple structure, only uses 4 electrodes to complete the detection of the magnetic field on the surface of the parallel device, and has low process cost, small volume and easy integration.
The technical key point of the invention is the innovation of the III-V group semiconductor heterojunction magnetic sensor structure, the magnetostrictive material is combined with the III-V group semiconductor heterojunction material, the Hall effect is replaced by the magnetostrictive effect, the measurement of the magnetic field parallel to the surface of the device is realized, and the scheme has the advantages of simple structure and small volume while ensuring high sensitivity. The manufacturing process of the device not only reduces the degree of lattice matching, but also ensures that the electrode has good ohmic contact, and greatly improves the performance of the device product. The invention mainly protects the structure design and the manufacturing process of the device.
Example 2
The embodiment shown in fig. 3 provides a description of the manufacturing process of the specific embodiment as follows:
1) Substrate preparation: preparing a substrate, cleaning the substrate material, and removing contaminants on the surface of the substrate.
2) And (3) epitaxial growth: epitaxially growing AlGaN/GaN heterojunction structure and buffer layer AlN by Metal Organic Chemical Vapor Deposition (MOCVD), and forming GaN channel layer with thickness of 3 μm and background electron concentration of 1 × 10 16 cm -3 The AlGaN barrier layer on the channel layer is 25nm thick, and the Al component is 0.1. The buffer layer is AlN and has a thickness of 50nm. Simultaneously growing 1nm AlN insert layer between AlGaN and GaN to increase the flatness between the two layers andthe concentration and mobility of the two-dimensional electron gas (2 DEG) are increased.
3) Etching the table top: after a sample with good epitaxial growth is subjected to glue coating (using AZ6130 positive photoresist), glue homogenizing (rotating for 600rpm-3s before and 1000rmp-20s after, the final photoresist thickness is 2 um), photoetching and developing (90 seconds), etching is carried out on a heterojunction by utilizing inductively coupled plasma etching (ICP), the etching power is 200W, 150sccm Cl-based gas is introduced for etching for 250s, and finally the etching depth of about 400nm is formed.
4) And (3) growing a magnetostrictive layer: preparation of Terfenol-D film ((Tb) by direct current magnetron sputtering 0.28 Dy 0.72 )Fe 1.99 ) The target material is Fe target, tb sheet and Dy sheet, the objective table is rotated to make the sputtering baffle plate be positioned over the target material, and the vacuum degree of back bottom is pumped to 1X 10 -5 Introducing Ar gas after Pa, adjusting sputtering parameters, opening a baffle to start sputtering, closing the baffle after a specified time is reached, and stopping sputtering; putting the substrate in an annealing heat treatment device, starting a heating temperature control power supply, setting the heating rate, the cooling rate, the temperature and the heat preservation time, and keeping the vacuum degree at 3 multiplied by 10 -4 And carrying out vacuum heat treatment on the Terfenol-D film under the environment of Pa or below to finally form the film with the thickness of about 820 nm.
5) Shallow etching: after gluing (using AZ6130 positive photoresist), spin coating (rotating 600rpm-3s before, then 1000rmp-20s after, the final photoresist thickness is 2 um), photoetching and developing (90 seconds), etching a sample by utilizing Inductively Coupled Plasma (ICP), wherein the etching power is 200W, introducing 150sccm Cl-based gas for etching for 500s, and finally forming the etching depth of about 840 nm.
6) And (3) electrode ohmic contact manufacturing: after photoetching and developing, four layers of metals of Ti (20 nm)/Al (100 nm)/Ni (45 nm)/Au (55 nm) are respectively deposited by an electron beam evaporation system, and then annealing is carried out for 30s at 850 ℃ in a nitrogen environment by utilizing a rapid annealing (RTA) process to form good ohmic contact.
7) Surface passivation: depositing 300nm thick SiO by Plasma Enhanced Chemical Vapor Deposition (PECVD) at 300 deg.C 2 And the passivation layer weakens the influence of the ambient atmosphere on the device characteristics.
8) Opening a window: and corroding the passivation layer at the electrode and opening a window lead. The sample is subjected to glue coating (using AZ6130 positive photoresist), spin coating (rotating at 600rpm-3s before, then rotating at 1000rmp-20s after, and finally the photoresist thickness is 2 um), photoetching and developing (90 seconds), etching is carried out at the electrode part with the passivated surface by utilizing ICP (inductively coupled plasma) etching to form a window, then 500nm of Al is deposited at the electrode part by adopting a magnetron sputtering method, and then a lead is led out to lead out the electrode.
Fig. 4 and 5 show characteristic curves of the magnetic sensor in example 2 of the present application, and fig. 4 shows the change of 2DEG concentration at the AlGaN/GaN heterojunction interface under the influence of the magnetostrictive strain amount of the Terfenol-D material. The concentration of 2DEG at the heterojunction interface is dependent on the amount of magnetostrictive strain epsilon of Terfenol-D H The increase of the concentration is increased linearly, and compared with the 2DEG concentration without the Terfenol-D material, the concentration of the 2DEG is changed by 12.45 percent; FIG. 5 shows the current at excitation I bias In embodiment 2 of the present invention, when the current is 1mA, the detection voltage changes with the magnetic field, because the magnetostrictive strain amount of the Terfenol-D material is affected by the saturation magnetization, the detection voltage changes nonlinearly with the increase of the magnetic field, the magnetic field measurement range is 0 to 320mT, when the magnetic field is greater than 320mT, the magnetic saturation is achieved, the magnetostrictive strain does not change any more, and the voltage does not change. The maximum sensitivity of the device is 4.45V/T, which is far larger than that of the existing magnetic sensor for measuring the magnetic field on the surface of the parallel device.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be able to cover the technical solutions and the inventive concepts of the present invention within the technical scope of the present invention.
Claims (10)
1. A two-dimensional magnetic sensor based on a two-dimensional electron gas channel structure, comprising: the electrode structure comprises a substrate, a buffer layer, a channel layer, a barrier layer, a magnetostrictive layer, an electrode Sx1, an electrode Sx2, an electrode Sy1 and an electrode Sy2, and is characterized in that the buffer layer, the channel layer and the barrier layer are sequentially grown on the substrate, a heterojunction structural layer is formed by the channel layer and the barrier layer, two-dimensional electron gas is generated by polarized charge induction at the contact interface of the channel layer and the barrier layer, the magnetostrictive layer is arranged above the barrier layer, the electrode Sx1, the electrode Sx2, the electrode Sy1 and the electrode Sy2 are arranged above the magnetostrictive layer, the electrode Sx1, the electrode Sx2, the electrode Sy1 and the electrode Sy2 extend to the heterojunction structural layer from above the magnetostrictive layer, the electrode Sx1 and the electrode Sx2 are symmetrically arranged, and the electrode Sy1 and the electrode Sy2 are symmetrically arranged.
2. A two-dimensional magnetic sensor based on a two-dimensional electron gas channel structure as claimed in claim 1, wherein the substrate is silicon, silicon carbide, sapphire or a substrate of the same material as the channel layer.
3. A two-dimensional magnetic sensor based on two-dimensional electron gas channel structure according to claim 1, wherein the buffer layer is AlN or GaN or a superlattice structure, and the thickness of the buffer layer is 10-100 nm.
4. The two-dimensional magnetic sensor based on two-dimensional electron gas channel structure as claimed in claim 1, wherein the channel layer is a thin film structure of GaN, gaAs, inSb, inAs or iii-v semiconductor, and the thickness of the channel layer is 0.1-50 μm.
5. The two-dimensional magnetic sensor based on two-dimensional electron gas channel structure as claimed in claim 1, wherein the barrier layer is AlGaN, inGaAs, alGaAs, inAlN or a thin film structure capable of forming a heterojunction with a group III-V semiconductor, and the thickness of the barrier layer is 5-100 nm.
6. The two-dimensional magneto-sensitive sensor based on two-dimensional electron gas channel structure as claimed in claim 1, wherein said magnetostrictive layer is a thin film structure of any magnetostrictive material selected from the group consisting of terbium dysprosium iron alloy, brittle modified terbium dysprosium iron alloy, and iron gallium alloy, and said magnetostrictive layer has a thickness of 0.05-5 μm.
7. The two-dimensional magnetic sensor based on two-dimensional electron gas channel structure as claimed in claim 1, wherein the shape of the electrodes Sx1, sx2, sy1, sy2 is rectangular or trapezoidal.
8. A two-dimensional magnetic sensor preparation method based on a two-dimensional electronic air channel structure is characterized by comprising the following steps:
s1, substrate preparation: preparing a substrate, cleaning the substrate material, and removing pollutants on the surface of the substrate;
s2, epitaxial growth: epitaxially growing a buffer layer and a heterojunction structure layer by any one of a metal organic compound chemical vapor deposition method, a molecular beam epitaxy method and a hydride vapor phase epitaxy method, wherein the thickness of the generated channel layer is 0.1-50 mu m, the thickness of a barrier layer on the channel layer is 5-100 nm, the buffer layer is one of AIN, gaN or a superlattice structure, and the thickness of the buffer layer is 10-100 nm;
s3, etching the table top: after photoetching and developing, etching the sample which grows well in the epitaxial mode by using an inductive coupling plasma etching method, wherein the etching depth of the table top is 50-800 nm;
s4, growth of a magnetostrictive layer: preparing a magnetostrictive film by adopting any one of a magnetron sputtering method, a molecular beam epitaxy method, an ion beam sputtering method, a vacuum thermal evaporation method, an ion plating method and a flash evaporation method, wherein the thickness of the generated magnetostrictive film is 0.05-5 mu m;
s5, shallow etching: after photoetching and developing the sample on which the magnetostrictive layer grows, etching by using an inductively coupled plasma etching method, wherein the etching depth is 0.05-5.1 mu m;
s6, electrode ohmic contact manufacturing: after photoetching and developing, depositing composite metal by using an electron beam evaporation system, and then forming good ohmic contact by using a rapid annealing process;
s7, surface passivation: depositing a dielectric layer by adopting any one of a plasma enhanced chemical vapor deposition method, a magnetron sputtering method, an atomic layer deposition method and an electron beam evaporation method to perform device passivation;
s8, opening a window: and photoetching and corroding the passivation layer at the electrode to form a window, and depositing metal at the electrode by adopting any one of a magnetron sputtering method, an electron beam evaporation method and a thermal evaporation method to manufacture a bonding pad and lead.
9. The method of claim 8, wherein in step S2, an AlN insertion layer of 0.5 to 2nm is grown between the barrier layer and the channel layer to increase the flatness between the two layers and to increase the concentration and mobility of the two-dimensional electron gas.
10. The method for preparing a two-dimensional magnetic sensor based on a two-dimensional electron gas channel structure as claimed in claim 8, wherein in step S3, an inductively coupled plasma etching method is used to etch the heterojunction, the etching power is 100-1000W, and 150-500 sccm of Cl-based gas is introduced for etching, so as to finally form an etching depth of about 50-800 nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116540156A (en) * | 2023-04-27 | 2023-08-04 | 长安大学 | Sensitivity-adjustable magnetic field strength sensor based on laminated magnetoelectric structure and adjusting method |
| CN117279480A (en) * | 2023-09-21 | 2023-12-22 | 大连理工大学 | Two-dimensional electron gas side wall injection type spin information device structure and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116540156A (en) * | 2023-04-27 | 2023-08-04 | 长安大学 | Sensitivity-adjustable magnetic field strength sensor based on laminated magnetoelectric structure and adjusting method |
| CN116540156B (en) * | 2023-04-27 | 2023-10-31 | 长安大学 | Sensitivity-adjustable magnetic field strength sensor based on laminated magnetoelectric structure and adjusting method |
| CN117279480A (en) * | 2023-09-21 | 2023-12-22 | 大连理工大学 | Two-dimensional electron gas side wall injection type spin information device structure and preparation method thereof |
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