CN115664357A - Radio frequency signal amplifying circuit and communication device - Google Patents
Radio frequency signal amplifying circuit and communication device Download PDFInfo
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- CN115664357A CN115664357A CN202211703448.0A CN202211703448A CN115664357A CN 115664357 A CN115664357 A CN 115664357A CN 202211703448 A CN202211703448 A CN 202211703448A CN 115664357 A CN115664357 A CN 115664357A
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Abstract
The embodiment of the application provides a radio frequency signal amplification circuit and a communication device, and the radio frequency signal amplification circuit comprises: a breakdown voltage protection circuit and a transistor for amplifying a radio frequency signal; one end of the breakdown voltage protection circuit is connected with the input end of the transistor; the other end of the breakdown voltage protection circuit is grounded; the output end of the transistor is used for outputting the amplified radio frequency signal; the breakdown voltage protection circuit is switched on under the condition that the voltage value of a radio-frequency signal input by the input end of the transistor is greater than or equal to the switching-on voltage value of the breakdown voltage protection circuit, the resistance value of the breakdown voltage protection circuit is reduced along with the increase of the voltage value, and the breakdown voltage of the transistor is increased; the breakdown voltage protection circuit is turned off when the voltage value of the radio frequency signal input from the input terminal of the transistor is smaller than the turn-on voltage value.
Description
Technical Field
The present application relates to the field of radio frequency signal amplification, and in particular, to a radio frequency signal amplification circuit and a communication device.
Background
The input impedance of antenna has very big change when external environment changes, therefore the impedance that the later stage of power amplifier output was seen also can very big change, cause power amplifier's output mismatch easily, when the power amplifier output mismatch, the wave form of output can reflect along output path, because the standing wave of reflecting back can make the voltage increase at power amplifier's the output of transistor, after the voltage of transistor output surpassed the voltage that the transistor can bear, lead to the transistor to be burnt easily.
In the prior art, a protection circuit is generally adopted at the final stage of a power amplifier to improve the durability of the circuit, but the circuit introduced in the prior art has a complex structure and introduces too many parasitic parameters to reduce the performance; the introduced circuit can affect the performance of the power amplifier under a small signal and a normal path, and cannot be automatically adjusted along with the power size and the mismatch condition.
Disclosure of Invention
In view of the above, embodiments of the present application are directed to providing a radio frequency signal amplifying circuit and a communication device, which can simplify a circuit structure and reduce parasitic parameters; the introduced circuit can not affect the performance of the power amplifier under a small signal and a normal path, and can automatically adjust along with the size and mismatch condition of power.
In order to achieve the purpose, the technical scheme of the application is realized as follows:
in a first aspect, an embodiment of the present application provides a radio frequency signal amplifying circuit, including: a breakdown voltage protection circuit and a transistor for amplifying a radio frequency signal;
one end of the breakdown voltage protection circuit is connected with the input end of the transistor; the other end of the breakdown voltage protection circuit is grounded; the output end of the transistor is used for outputting the amplified radio frequency signal;
the breakdown voltage protection circuit is switched on under the condition that the voltage value of a radio-frequency signal input by the input end of the transistor is greater than or equal to the switching-on voltage value of the breakdown voltage protection circuit, the resistance value of the breakdown voltage protection circuit is reduced along with the increase of the voltage value, and the breakdown voltage of the transistor is increased;
the breakdown voltage protection circuit is turned off when the voltage value of the radio frequency signal input from the input terminal of the transistor is smaller than the turn-on voltage value.
In the above radio frequency signal amplifying circuit, the breakdown voltage protection circuit includes: a diode and a resistor;
the anode of the diode is connected with one end of the resistor; the cathode of the diode is grounded; the other end of the resistor is connected with the input end of the transistor;
alternatively, the breakdown voltage protection circuit includes: a protection transistor and a resistor connected in a diode manner;
one end of the resistor is connected with the input end of the transistor, and the other end of the resistor is grounded through the protection transistor.
In the radio frequency signal amplifying circuit, the transistor is a triode or a field effect transistor.
In the radio frequency signal amplifying circuit, the radio frequency signal amplifying circuit comprises a first transistor, a second transistor, a first breakdown voltage protection circuit and a second breakdown voltage protection circuit which are cascaded;
the grounding end of the first transistor is grounded, the output end of the first transistor is connected with the grounding end of the second transistor, and the output end of the second transistor is connected with the direct-current power supply; the output end of the second transistor is used for outputting the amplified radio frequency signal; the input end of the first transistor is used for inputting a radio frequency signal;
one end of the first breakdown voltage protection circuit is connected with the input end of the first transistor, and the other end of the first breakdown voltage protection circuit is grounded; one end of the second breakdown voltage protection circuit is connected with the input end of the second transistor, and the other end of the second breakdown voltage protection circuit is grounded.
In the radio frequency signal amplifying circuit, the first breakdown voltage protection circuit is turned on when a first voltage value of a radio frequency signal input by an input end of the first transistor is greater than or equal to a first turn-on voltage value of the first breakdown voltage protection circuit, a first resistance value of the first breakdown voltage protection circuit decreases with an increase of the first voltage value, and a first breakdown voltage of the first transistor increases;
the second breakdown voltage protection circuit is turned on when a second voltage value of the first radio-frequency signal input to the ground terminal of the second transistor is greater than or equal to a second turn-on voltage value of the second breakdown voltage protection circuit, a second resistance value of the second breakdown voltage protection circuit decreases with an increase of the second voltage value, and a second breakdown voltage of the second transistor increases.
In the radio frequency signal amplifying circuit, the radio frequency signal amplifying circuit comprises a breakdown voltage protection circuit, a plurality of transistors and a change-over switch;
one end of the breakdown voltage protection circuit is connected with the single end of the change-over switch; the other end of the breakdown voltage protection circuit is grounded; the multiple ends of the change-over switch are respectively connected with the multiple transistors; the grounding ends of the transistors are grounded respectively; the output ends of the plurality of transistors are used for outputting the amplified radio frequency signals.
In the radio frequency signal amplifying circuit, after the first terminal of the plurality of terminals is turned on by the switch, the breakdown voltage protection circuit is turned on under the condition that the voltage value of the radio frequency signal input by the input terminal of the first transistor connected to the first terminal is greater than or equal to the turn-on voltage value of the breakdown voltage protection circuit, the resistance value of the breakdown voltage protection circuit decreases with the increase of the voltage value, and the breakdown voltage of the turned-on transistor increases.
In the radio frequency signal amplifying circuit, the resistor is an adjustable resistor; the diode is an adjustable diode.
In the above radio frequency signal amplifying circuit, the breakdown voltage protection circuit includes: an adjustable resistor and a switch;
one end of the adjustable resistor is connected with the input end of the transistor, and the other end of the adjustable resistor is connected with one end of the switch; the other end of the switch is grounded;
and under the condition that the voltage value of the radio-frequency signal input by the input end of the transistor is detected to be larger than or equal to the breakover voltage value of the breakdown voltage protection circuit, the switch is closed, the breakdown voltage protection circuit is conducted, the resistance value of the breakdown voltage protection circuit is reduced by adjusting the adjustable resistor, and the breakdown voltage of the transistor is increased.
In a second aspect, an embodiment of the present application provides a communication device, which includes the radio frequency signal amplifying circuit described above.
The embodiment of the application provides a radio frequency signal amplification circuit and a communication device, and the radio frequency signal amplification circuit comprises: a breakdown voltage protection circuit and a transistor for amplifying a radio frequency signal; one end of the breakdown voltage protection circuit is connected with the input end of the transistor; the other end of the breakdown voltage protection circuit is grounded; the output end of the transistor is used for outputting the amplified radio frequency signal; the breakdown voltage protection circuit is switched on under the condition that the voltage value of a radio-frequency signal input by the input end of the transistor is greater than or equal to the switching-on voltage value of the breakdown voltage protection circuit, the resistance value of the breakdown voltage protection circuit is reduced along with the increase of the voltage value, and the breakdown voltage of the transistor is increased; the breakdown voltage protection circuit is turned off when the voltage value of the radio frequency signal input by the input end of the transistor is smaller than the turn-on voltage value. By adopting the radio-frequency signal amplifying circuit, in the process of amplifying a radio-frequency signal, the breakdown voltage protection circuit is arranged between the input end of the transistor and the grounding end, when the voltage value of the radio-frequency signal input by the input end of the transistor is greater than or equal to the conduction voltage value of the breakdown voltage protection circuit, the breakdown voltage protection circuit is switched on, otherwise, the breakdown voltage protection circuit is switched off, and under the condition that the breakdown voltage protection circuit is switched on, along with the increase of the voltage value of the input radio-frequency signal, the resistance value of the breakdown voltage protection circuit is reduced, further the breakdown voltage of the transistor is increased, the performance of the power amplifier under a normal path is not influenced by the amplifying circuit, and under the condition that the input signal is greater than or equal to a preset value or the output end is mismatched, the total resistance of the breakdown voltage is reduced, the resistance value in the circuit is reduced, the breakdown voltage is correspondingly increased, the durability capability of the transistor is improved, the mismatch voltage can be automatically adjusted along with the power size and the power, the added breakdown voltage adjusting structure is simple, and the performance can not be reduced due to introduced parasitic parameters.
Drawings
Fig. 1 is a first schematic diagram of a radio frequency signal amplifying circuit according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram of a radio frequency signal amplifying circuit according to an embodiment of the present disclosure;
fig. 3 is a schematic diagram illustrating a structure of a radio frequency signal amplifying circuit according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a radio frequency signal amplifying circuit according to a fourth embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a radio frequency signal amplifying circuit according to an embodiment of the present application.
Detailed Description
So that the manner in which the above recited features and advantages of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of the application only and is not intended to be limiting of the application.
In the following description, reference is made to "some embodiments" which describe a subset of all possible embodiments, but it is understood that "some embodiments" may be the same subset or different subsets of all possible embodiments, and may be combined with each other without conflict. It should also be noted that reference to the terms "first/second/third" in the embodiments of the present application is only used for distinguishing similar objects and does not denote a particular order or importance to the objects, and it should be understood that "first/second/third" may, where permissible, be interchanged in a particular order or sequence so that the embodiments of the present application described herein can be implemented in other than the order shown or described herein.
In the prior art, because the input impedance of the antenna changes greatly when the external environment changes, the impedance seen by the output end of the power amplifier to the rear stage also changes greatly, which causes the output mismatch of the power amplifier, when the output end of the power amplifier is mismatched, the output waveform is reflected back along the output path, the voltage at the collector stage of the transistor is increased due to the standing wave, and the power amplifier is burnt out after the voltage which can be born by the device is exceeded. The robustness Ruggedness capability of the power amplifier refers to the maximum output power under a fixed standing-wave ratio; ruggedness design of power amplifiers is a complex project, related to device physics, circuit design, and system applications. In the design of the power amplifier, the robustness of the power amplifier must be carefully designed, so that the mobile phone can be ensured not to burn in various environment applications.
At present, ruggedness protection circuits are generally added to the final stage of a power amplifier, but the output power of the final stage of the power amplifier is very high and is also the most difficult part to design, so that the circuits to be introduced cannot affect the radio frequency performance.
Commonly used schemes for Ruggedness protection circuits include the following:
(1) The area of the final stage of the power amplifier is increased, so that the power amplifier can bear larger current, but the performance of the power amplifier is wasted.
(2) A circulator is added at the output end of the power amplifier.
(3) The rectifying resistance of the final stage of the power amplifier is increased.
However, the existing Ruggedness protection circuit still has two problems:
(1) The circuit is not simple enough and introduces too many parasitic parameters, resulting in reduced performance. The complexity of the circuit increases the difficulty of the layout and increases the area of the chip.
(2) The robustness problem generally occurs only under the condition of high power or mismatch, and the introduced circuit can influence the performance of small signals and normal paths and cannot be automatically adjusted along with the power and the mismatch.
To solve the problems in the prior art, an embodiment of the present application provides a radio frequency signal amplifying circuit 1, as shown in fig. 1, where the radio frequency signal amplifying circuit 1 includes: a breakdown voltage protection circuit 10 and a transistor 11 for amplifying a radio frequency signal; one end of the breakdown voltage protection circuit 10 is connected with the input end of the transistor 11; the other end of the breakdown voltage protection circuit 10 is grounded; the output end of the transistor 11 is used for outputting an amplified radio frequency signal; the breakdown voltage protection circuit 10 is turned on when the voltage value of the radio frequency signal input at the input end of the transistor 11 is greater than or equal to the turn-on voltage value of the breakdown voltage protection circuit 10, the resistance value of the breakdown voltage protection circuit 10 is reduced along with the increase of the voltage value, and the breakdown voltage of the transistor 11 is increased; the breakdown voltage protection circuit 10 is turned off when the voltage value of the radio frequency signal input to the input terminal of the transistor 11 is smaller than the on voltage value.
In the embodiment of the present application, as shown in fig. 1, a breakdown voltage protection circuit 10 is introduced between an input terminal of a transistor 11 and a ground terminal, when a voltage value of a radio frequency signal input at the input terminal of the transistor 11 is greater than or equal to a conducting voltage value of the breakdown voltage protection circuit 10, at this time, the breakdown voltage protection circuit 10 is automatically turned on, and when the breakdown voltage protection circuit 10 is turned on, if the voltage value of the radio frequency signal input at the input terminal of the transistor 11 continuously increases, a resistance value of the breakdown voltage protection circuit 10 gradually decreases along with the continuously increasing voltage value, because the breakdown voltage of the transistor is inversely proportional to the resistance value of the protection circuit 10, the breakdown voltage of the transistor 11 tends to gradually increase along with the gradually decreasing resistance value of the breakdown voltage protection circuit 10, and when the breakdown voltage of the transistor 11 increases, the transistor 11 is not easily burned, thereby improving robustness of the power amplification circuit.
It can be understood that, as the voltage value of the radio frequency signal input to the input terminal of the transistor 11 gradually increases, the resistance value of the breakdown voltage protection circuit 10 gradually decreases, and when the resistance value of the breakdown voltage protection circuit 10 gradually decreases, the breakdown voltage of the transistor 11 gradually increases.
It should be noted that the condition that the breakdown voltage protection circuit 10 is turned on is applicable to a scenario that the input signal is greater than the preset value or the output end of the power amplifier is mismatched.
In the embodiment of the present application, when the voltage value of the rf signal input at the input end of the transistor 11 is smaller than the on voltage value of the breakdown voltage protection circuit 10, the breakdown voltage protection circuit 10 is not turned on, and at this time, the breakdown voltage protection circuit 10 can be understood as an open circuit state, the breakdown voltage protection circuit 10 is turned off in the rf signal amplification circuit 1, and the introduced breakdown voltage protection circuit 10 has no influence on the whole rf signal amplification circuit 1.
It should be noted that the breakdown voltage protection circuit 10 is in the non-conducting state, which is suitable for a situation where the radio frequency signal amplification circuit is in a normal path.
In the embodiment of the present application, the type of the transistor may be a triode or a field effect transistor.
In this embodiment, when the transistor is a transistor, the input terminal of the transistor is a base of the transistor, the output terminal of the transistor is a collector of the transistor, and the ground terminal of the transistor is an emitter of the transistor.
In the embodiment of the present application, when the transistor is a field effect transistor, the input terminal of the transistor is a gate of the field effect transistor, the output terminal of the transistor is a drain of the field effect transistor, and the ground terminal of the transistor is a source of the field effect transistor.
It should be noted that the type of the transistor may not be limited to the two types of the triode and the field effect transistor in this application, and other types of transistors also belong to the protection scope of this application, and the type of the transistor may be selected according to the actual situation, and is not specifically limited in this application.
Optionally, the breakdown voltage protection circuit comprises: a diode and a resistor; the anode of the diode is connected with one end of the resistor; the cathode of the diode is grounded; the other end of the resistor is connected with the input end of the transistor.
In the embodiment of the present application, in the case that the transistor is a triode, the rf signal amplifying circuit is as shown in fig. 2, the rf signal amplifying circuit includes a breakdown voltage protection circuit 10 and a triode Q, and the breakdown voltage protection circuit 10 includes a resistor R and a diode D.
In this embodiment, one end of the resistor R in the breakdown voltage protection circuit 10 is connected to the anode of the diode D, the cathode of the diode D is connected to the emitter of the transistor Q, the emitter of the transistor Q is grounded, the other end of the resistor R is connected to the base of the transistor Q, the collector of the transistor Q is connected to the power supply and grounded, and the collector of the transistor Q is further configured to output a radio frequency signal obtained by amplifying a radio frequency signal input to the base by the transistor Q.
In the embodiment of the present application, the radio frequency signal is input from the base of the triode, amplified by the triode, and then output from the collector of the triode.
In the embodiment of the application, when the voltage value of the radio-frequency signal input to the base electrode of the triode is greater than or equal to the conduction voltage value of the diode, the diode is conducted, the conduction resistance value of the diode is reduced along with the increase of the input voltage, and then the total resistance value of a breakdown voltage protection circuit formed by serially connecting the conduction resistance of the diode and the resistor R is also reduced, so that the breakdown voltage of the triode is increased, and the Ruggedness capability of the radio-frequency signal amplification circuit is improved.
In this application implementation, the diode switches on and can be applied to the radio frequency signal of input and be greater than or equal to the default, or the circumstances of triode output mismatch, can be understood as when the radio frequency signal of the base input of triode is greater than or equal to the default or the output mismatch's of triode the circumstances, the diode among the breakdown voltage protection circuit switches on, when the diode switches on, the on resistance of diode can reduce along with the increase on resistance of the increase diode of the voltage of input, and then the total resistance value of the breakdown voltage protection circuit that the on resistance of diode and resistance R establish ties and form reduces, thereby increase the breakdown voltage of triode.
In the embodiment of the present application, when the voltage value of the radio frequency signal input to the base of the transistor is smaller than the on-state voltage value of the diode, the diode is turned off, and at this time, the diode is in an off state.
In the embodiment of the application, the cut-off of the diode can be applied to the condition that the input radio frequency signal is smaller than a preset value and the radio frequency signal amplifying circuit works normally, the diode in the breakdown voltage protection circuit is cut off, at the moment, the breakdown voltage protection circuit is equivalently cut off in the radio frequency signal amplifying circuit, the breakdown voltage protection circuit does not work under the condition, and it can be understood that the introduced breakdown voltage protection circuit does not have any influence on the radio frequency signal amplifying circuit for the whole radio frequency signal amplifying circuit when the radio frequency signal amplifying circuit inputs a small signal or the radio frequency signal amplifying circuit works normally.
It can be understood that in the embodiment of the present application, in the normal path in fig. 2, the on-resistance of the diode is very large, and the breakdown voltage protection circuit is equivalent to an open circuit. When the radio-frequency signal is larger than the preset value or the output end of the triode is mismatched, the corresponding on-resistance of the diode is reduced along with the increase of the voltage, the total resistance value of the diode and the resistor connected in series is also reduced, the breakdown voltage of the triode is increased, and the Ruggedness capability can be improved.
It should be noted that the diode may also be replaced by a protection transistor in a diode connection manner, and at this time, the resistor is grounded through the protection transistor, that is, the breakdown voltage protection circuit may be replaced by a protection transistor and a resistor in a diode connection manner; one end of the resistor is connected with the input end of the transistor, and the other end of the resistor is grounded through the protection transistor.
It should be noted that the above embodiments are also applicable to field effect transistors or other types of transistors, and the specific implementation process is not described herein again.
It should be noted that, in the breakdown voltage protection circuit provided in the embodiment of the present application, a Ruggedness protection circuit is implemented by a series connection of a resistor and a diode. When the triode normally works, no current leakage circuit exists at the moment, the Breakdown voltage protection circuit is equivalent to an open circuit, the Breakdown voltage of the triode is the minimum at the moment, and when the total resistance value in the Breakdown voltage protection circuit takes a proper value, the Breakdown down voltage of the triode can be improved, so that the capability of Ruggedness is improved.
Optionally, the radio frequency signal amplifying circuit includes a first transistor, a second transistor, a first breakdown voltage protection circuit, and a second breakdown voltage protection circuit, which are cascaded; the grounding end of the first transistor is grounded, the output end of the first transistor is connected with the grounding end of the second transistor, and the output end of the second transistor is connected with the direct-current power supply; the output end of the second transistor is used for outputting the amplified radio frequency signal; the input end of the first transistor is used for inputting a radio frequency signal; one end of the first breakdown voltage protection circuit is connected with the input end of the first transistor, and the other end of the first breakdown voltage protection circuit is grounded; one end of the second breakdown voltage protection circuit is connected with the input end of the second transistor, and the other end of the second breakdown voltage protection circuit is grounded.
In the embodiment of the present application, the radio frequency signal amplifying circuit includes a plurality of transistors, and the plurality of transistors are connected in series, where the number of the plurality of transistors may be 2, and specifically may be represented as a first transistor and a second transistor.
It should be noted that the number of the plurality of transistors may be selected according to actual situations, and is not specifically limited in the present application.
It should be noted that the first and second transistors are not limited to 2 transistors, where the first transistor and the second transistor may refer to transistors on two sides of a plurality of transistors connected in series in a circuit, one or more transistors may be cascaded between the first transistor and the second transistor, and the number of transistors cascaded between the first transistor and the second transistor is not specifically limited.
In this embodiment, when the transistor is a transistor, the input terminal of the transistor is a base of the transistor, the output terminal of the transistor is a collector of the transistor, and the ground terminal of the transistor is an emitter of the transistor.
In the embodiment of the present application, when the transistor is a field effect transistor, the input terminal of the transistor is a gate of the field effect transistor, the output terminal of the transistor is a drain of the field effect transistor, and the ground terminal of the transistor is a source of the field effect transistor.
In the embodiment of the present application, when a plurality of transistors are included in the radio frequency signal amplifying circuit, it is necessary to adjust the breakdown voltage of each transistor by respectively matching the corresponding breakdown voltage protection circuit for each transistor in the plurality of transistors.
In other embodiments, when the rf signal amplifying circuit includes a plurality of transistors, only some of the transistors may be provided with the breakdown voltage protection circuit.
In the embodiment of the present application, as shown in fig. 3, taking a manner in which two transistors are cascaded as an example, if the transistors are field effect transistors, the radio frequency signal amplification circuit includes two field effect transistors, which are a first field effect transistor M1 and a second field effect transistor M2, and the radio frequency signal amplification circuit further includes two breakdown voltage protection circuits 10, which are a first breakdown voltage protection circuit 101 and a second breakdown voltage protection circuit 102, respectively, where the two field effect transistors are connected in a cascaded manner, the first breakdown voltage protection circuit includes a resistor R1 and a diode D1, and the second breakdown voltage protection circuit includes a resistor R2 and a diode D2.
In the embodiment of the present application, as shown in fig. 3, the first breakdown voltage protection circuit includes a first diode D1 and a first resistor R1, wherein an anode of the first diode is connected to one end of the first resistor R1, a cathode of the first diode D1 is grounded, and another end of the first resistor R1 is connected to a gate of the first field-effect transistor M1. The second breakdown voltage protection circuit comprises a second diode D2 and a second resistor R2, wherein the anode of the second diode D2 is connected with one end of the second resistor R2, the cathode of the second diode D2 is grounded, the other end of the second resistor R2 is connected with the grid of a second field-effect tube M2, and the grid of the second field-effect tube M2 is connected with a power supply and grounded.
In the embodiment of the present application, a gate of the first field effect transistor is used as a radio frequency signal input terminal, a source of the first field effect transistor is grounded, and a radio frequency signal is amplified after being input through the gate of the first field effect transistor and is output through a drain of the first field effect transistor.
In the embodiment of the present application, the drain of the second fet is also connected to a power supply.
It should be noted that the first field effect transistor and the second field effect transistor may be replaced by a first triode and a second triode, or may be other types of transistors, and specifically, may be selected according to actual situations, and are not specifically limited in this application.
It should be noted that, for example, if the radio frequency signal amplification circuit includes 3 transistors, and the transistors are field effect transistors, the series structure is that the drain of the first field effect transistor is connected to the source of the second field effect transistor, the drain of the second field effect transistor is connected to the source of the third field effect transistor, the drain of the third field effect transistor outputs the amplified radio frequency signal, the gates of the second field effect transistor and the third field effect transistor are grounded, respectively, the gate of the first field effect transistor inputs the radio frequency signal, and the process of adjusting the breakdown voltage of each transistor may refer to a manner of adjusting the transistors by using the breakdown voltage protection circuit when the two transistors are connected in series, which is not described herein again.
It should be noted that, if the number of the cascaded transistors is at least three, the manner of cascade connection of the at least three transistors may refer to the manner of cascade connection of a plurality of transistors in the above embodiment, and details are not described here.
In this embodiment of the application, when the breakdown voltages of the plurality of transistors are respectively adjusted by the plurality of breakdown voltage protection circuits based on the cascade connection manner of the plurality of transistors, the first breakdown voltage protection circuit is turned on when a first voltage value of a radio frequency signal input to the input end of the first transistor is greater than or equal to a first turn-on voltage value of the first breakdown voltage protection circuit, and a first resistance value of the first breakdown voltage protection circuit decreases as the first voltage value increases, and a first breakdown voltage of the first transistor increases; the second breakdown voltage protection circuit is turned on when a second voltage value of the first radio-frequency signal input to the ground terminal of the second transistor is greater than or equal to a second turn-on voltage value of the second breakdown voltage protection circuit, a second resistance value of the second breakdown voltage protection circuit decreases with an increase of the second voltage value, and a second breakdown voltage of the second transistor increases.
In the embodiment of the application, the first breakdown voltage protection circuit adjusts the breakdown voltage of the first field effect transistor, and the second breakdown voltage protection circuit adjusts the breakdown voltage of the second field effect transistor.
When there are a plurality of field effect transistors, a plurality of breakdown voltage protection circuits are provided to adjust the breakdown voltages of the plurality of field effect transistors, respectively.
In the embodiment of the application, when the first breakdown voltage adjusting circuit adjusts the breakdown voltage of the first field effect transistor, the first breakdown voltage protection circuit is turned on when a first voltage value of a radio frequency signal input to a gate of the first field effect transistor is greater than or equal to a first turn-on voltage value of the first breakdown voltage protection circuit, and when the first voltage value is increased, a first resistance value of the first breakdown voltage protection circuit is decreased and a first breakdown voltage of the first field effect transistor is increased; the first fet is not easily broken down. And if the first voltage value of the radio-frequency signal input by the grid electrode of the first field effect transistor is smaller than the first breakover voltage value of the first breakdown voltage protection circuit, the first breakdown voltage protection circuit is not conducted.
In the embodiment of the present application, after the radio frequency signal input by the gate of the first field effect transistor is amplified by the first field effect transistor, the amplified first radio frequency signal is output by the drain of the first field effect transistor. And a first radio frequency signal output by the drain electrode of the first field effect transistor is input into the second field effect transistor through the source electrode of the second field effect transistor for radio frequency signal amplification.
In the embodiment of the present application, when the second breakdown voltage protection circuit adjusts the breakdown voltage of the second field effect transistor, because the first field effect transistor and the second field effect transistor are cascaded, the drain of the first field effect transistor inputs the first radio frequency signal to the source of the second field effect transistor, and when the second voltage value of the first radio frequency signal input by the source of the second field effect transistor is greater than or equal to the second turn-on voltage value of the second breakdown voltage protection circuit, the second breakdown voltage protection circuit is turned on, and when the second voltage value is increased, the second resistance value of the second breakdown voltage protection circuit is decreased, and the second breakdown voltage of the second field effect transistor is increased; and if the second voltage value of the first radio-frequency signal input by the source electrode of the second field effect transistor is smaller than the second breakover voltage value of the second breakdown voltage protection circuit, the second breakdown voltage protection circuit is not conducted.
In the embodiment of the present application, the drain of the second field effect transistor outputs the amplified rf signal.
It should be noted that, if the number of field effect transistors included in the radio frequency signal amplification circuit is greater than two, a manner of adjusting the corresponding field effect transistor by using the breakdown voltage protection circuit in the radio frequency signal amplification circuit may refer to a manner implemented when two transistors are cascaded in the foregoing embodiment, and a specific implementation process is not described herein again.
It should be noted that the types of the plurality of transistors may be other than the field effect transistors in the present embodiment, and may also be transistors or other types of transistors, and the breakdown voltage of each transistor is adjusted by using a corresponding one of the breakdown voltage protection circuits.
Optionally, the radio frequency signal amplifying circuit comprises a breakdown voltage protection circuit, a plurality of transistors and a switch; one end of the breakdown voltage protection circuit is connected with the single end of the change-over switch; the other end of the breakdown voltage protection circuit is grounded; the multiple ends of the switch group are respectively connected with the multiple transistors; the grounding ends of the transistors are grounded respectively; the output ends of the plurality of transistors are used for outputting the amplified radio frequency signals.
In the embodiment of the present application, the rf signal amplifying circuit may include a plurality of transistors, and the plurality of transistors are connected in parallel.
In the embodiment of the application, a change-over switch is added in a breakdown voltage protection circuit in a radio frequency signal amplification circuit, one breakdown voltage protection circuit can be controlled to be connected with one of a plurality of transistors through the change-over switch, and the breakdown voltage of the transistor connected with the change-over switch is adjusted by using the breakdown voltage protection circuit.
In the embodiment of the present application, as shown in fig. 4, the radio frequency signal amplifying circuit includes a breakdown voltage protection circuit 10, a switch S and two triodes, the breakdown voltage protection circuit includes a diode D and a resistor R, an anode of the diode D is connected to one end of the resistor R, a cathode of the diode D is grounded, the other end of the resistor R is connected to a single end of the switch S, two triodes Q1 and Q2 in the radio frequency signal amplifying circuit are connected in parallel, by closing the switch, a plurality of terminals of the switch are connected to bases of the triodes whose breakdown voltage is to be adjusted, and by closing one of the plurality of terminals of the switch, the breakdown voltage protection circuit can be selectively connected to any one of the triodes, and adjust the breakdown voltage of the connected triodes.
In this embodiment of the application, when the transistor to be subjected to breakdown voltage adjustment is connected by using the switch, after the switch turns on the first terminal of the plurality of terminals, the breakdown voltage protection circuit may be turned on when the voltage value of the radio frequency signal input at the input terminal of the first transistor connected to the first terminal is greater than or equal to the turn-on voltage value of the breakdown voltage protection circuit, and the resistance value of the breakdown voltage protection circuit decreases with the increase of the voltage value, and the breakdown voltage of the transistor to be turned on increases.
It should be noted that the switch S may be a single-pole multi-throw switch.
In the embodiment of the present application, exemplarily, the number of the transistors is 3, which are a, B, and C, the number of the multiple terminals corresponding to the switch S is also 3, which are a, B, and C, the ports a, B, and C correspond to the transistors a, B, and C, respectively, and if the breakdown voltage adjustment needs to be performed on the transistor a, the a terminal of the multiple terminals corresponding to the switch S is closed, the connection between the a terminal and the transistor a is conducted, and the breakdown voltage adjustment is performed on the transistor a by using the breakdown voltage protection circuit.
Illustratively, taking fig. 4 as an example, the switch S is connected to the base of Q1, and the breakdown voltage of Q1 is adjusted by the breakdown voltage adjusting circuit.
It should be noted that, the principle of adjusting the breakdown voltage of the transistor by using the breakdown voltage protection circuit may refer to the above principle of adjusting the breakdown voltage of the transistor, and is not described herein again.
It should be noted that the type of the transistor may be selected according to actual situations, and is not specifically limited in this application.
Optionally, the resistor and the diode in the breakdown voltage protection circuit in the embodiment of the present application may also be an adjustable resistor and an adjustable diode.
In the embodiment of the present application, the total resistance value in the breakdown voltage protection circuit may also be reduced by adjusting the resistance values of the adjustable resistor and the adjustable diode, so as to increase the breakdown voltage of the transistor.
Optionally, the breakdown voltage protection circuit comprises: an adjustable resistor and a switch; one end of the adjustable resistor is connected with the input end of the transistor, and the other end of the adjustable resistor is connected with one end of the switch; the other end of the switch is grounded; and under the condition that the voltage value of the radio-frequency signal input by the input end of the transistor is detected to be larger than or equal to the breakover voltage value of the breakdown voltage protection circuit, the switch is closed, the breakdown voltage protection circuit is conducted, the resistance value of the breakdown voltage protection circuit is reduced by adjusting the adjustable resistor, and the breakdown voltage of the transistor is increased.
In this embodiment, as shown in fig. 5, the breakdown voltage protection circuit 10 includes an adjustable resistor RV and a switch K, and if it is detected that the voltage value of the radio frequency signal input to the base of the transistor Q is greater than or equal to the turn-on voltage value of the breakdown voltage protection circuit 10, the switch K is closed, and the breakdown voltage protection circuit is turned on at this time, and further, by reducing the resistance value of the adjustable resistor RV, the resistance value of the breakdown voltage protection circuit 10 is reduced, the breakdown voltage of the transistor Q is increased, and the transistor Q can be protected.
It can be understood that, in the radio frequency signal amplifying circuit provided in the embodiment of the present application, in the process of amplifying a radio frequency signal, by setting a breakdown voltage protection circuit between the input end of the transistor and the ground end, when the voltage value of the radio frequency signal input to the input end of the transistor is greater than or equal to the turn-on voltage value of the breakdown voltage protection circuit, the breakdown voltage protection circuit is turned on, otherwise, the breakdown voltage protection circuit is turned off, and when the breakdown voltage protection circuit is turned on, the resistance value of the breakdown voltage protection circuit decreases with the increase of the voltage value of the input radio frequency signal, and further the breakdown voltage of the transistor increases.
Based on the above embodiments, the communication device provided in this application includes any one of the radio frequency signal amplifying circuits, the components of the radio frequency signal amplifying circuits, and the implementation principles thereof in the above embodiments have been discussed in the above embodiments, and are not described herein again.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one of 8230, and" comprising 8230does not exclude the presence of additional like elements in a process, method, article, or apparatus comprising the element.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A radio frequency signal amplification circuit, comprising: a breakdown voltage protection circuit and a transistor for amplifying a radio frequency signal;
one end of the breakdown voltage protection circuit is connected with the input end of the transistor; the other end of the breakdown voltage protection circuit is grounded; the output end of the transistor is used for outputting the amplified radio frequency signal;
the breakdown voltage protection circuit is switched on under the condition that the voltage value of a radio-frequency signal input by the input end of the transistor is greater than or equal to the switching-on voltage value of the breakdown voltage protection circuit, the resistance value of the breakdown voltage protection circuit is reduced along with the increase of the voltage value, and the breakdown voltage of the transistor is increased;
the breakdown voltage protection circuit is turned off when the voltage value of the radio frequency signal input from the input end of the transistor is smaller than the on-voltage value.
2. The radio frequency signal amplification circuit of claim 1, wherein the breakdown voltage protection circuit comprises: a diode and a resistor;
the anode of the diode is connected with one end of the resistor; the cathode of the diode is grounded; the other end of the resistor is connected with the input end of the transistor;
alternatively, the breakdown voltage protection circuit includes: a protection transistor and a resistor connected in a diode manner;
one end of the resistor is connected with the input end of the transistor, and the other end of the resistor is grounded through the protection transistor.
3. The radio frequency signal amplification circuit of claim 1, wherein the transistor is a triode or a field effect transistor.
4. The radio-frequency signal amplification circuit according to claim 1, wherein the radio-frequency signal amplification circuit comprises a first transistor, a second transistor, a first breakdown voltage protection circuit and a second breakdown voltage protection circuit which are connected in cascade;
the grounding end of the first transistor is grounded, the output end of the first transistor is connected with the grounding end of the second transistor, and the output end of the second transistor is connected with a direct-current power supply; the output end of the second transistor is used for outputting an amplified radio frequency signal; the input end of the first transistor is used for inputting a radio frequency signal;
one end of the first breakdown voltage protection circuit is connected with the input end of the first transistor, and the other end of the first breakdown voltage protection circuit is grounded; one end of the second breakdown voltage protection circuit is connected with the input end of the second transistor, and the other end of the second breakdown voltage protection circuit is grounded.
5. The radio frequency signal amplification circuit of claim 4,
the first breakdown voltage protection circuit is turned on when a first voltage value of a radio frequency signal input by an input end of the first transistor is greater than or equal to a first turn-on voltage value of the first breakdown voltage protection circuit, a first resistance value of the first breakdown voltage protection circuit decreases with the increase of the first voltage value, and a first breakdown voltage of the first transistor increases;
the second breakdown voltage protection circuit is turned on when a second voltage value of the first radio frequency signal input to the ground terminal of the second transistor is greater than or equal to a second on-state voltage value of the second breakdown voltage protection circuit, a second resistance value of the second breakdown voltage protection circuit decreases as the second voltage value increases, and a second breakdown voltage of the second transistor increases.
6. The radio frequency signal amplifying circuit according to claim 1, wherein the radio frequency signal amplifying circuit comprises a breakdown voltage protection circuit, a plurality of transistors and a switch;
one end of the breakdown voltage protection circuit is connected with the single end of the change-over switch; the other end of the breakdown voltage protection circuit is grounded; the multiple ends of the selector switch are respectively connected with the multiple transistors; the grounding ends of the transistors are grounded respectively; the output ends of the plurality of transistors are used for outputting the amplified radio frequency signals.
7. The radio frequency signal amplification circuit of claim 6,
after the first end of the multiple ends is conducted by the change-over switch, the breakdown voltage protection circuit is conducted under the condition that the voltage value of a radio-frequency signal input by the input end of the first transistor connected with the first end is larger than or equal to the conduction voltage value of the breakdown voltage protection circuit, the resistance value of the breakdown voltage protection circuit is reduced along with the increase of the voltage value, and the breakdown voltage of the conducted transistor is increased.
8. The radio frequency signal amplification circuit of claim 2, wherein the resistor is an adjustable resistor; the diode is an adjustable diode.
9. The radio frequency signal amplification circuit of claim 1, wherein the breakdown voltage protection circuit comprises: an adjustable resistor and a switch;
one end of the adjustable resistor is connected with the input end of the transistor, and the other end of the adjustable resistor is connected with one end of the switch; the other end of the switch is grounded;
and under the condition that the voltage value of the radio-frequency signal input by the input end of the transistor is detected to be greater than or equal to the breakover voltage value of the breakdown voltage protection circuit, the switch is closed, the breakdown voltage protection circuit is conducted, the resistance value of the breakdown voltage protection circuit is reduced by adjusting the adjustable resistor, and the breakdown voltage of the transistor is increased.
10. A communication device, characterized in that it comprises a radio frequency signal amplification circuit according to any of claims 1-9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211703448.0A CN115664357A (en) | 2022-12-29 | 2022-12-29 | Radio frequency signal amplifying circuit and communication device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211703448.0A CN115664357A (en) | 2022-12-29 | 2022-12-29 | Radio frequency signal amplifying circuit and communication device |
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| CN115664357A true CN115664357A (en) | 2023-01-31 |
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| CN202211703448.0A Pending CN115664357A (en) | 2022-12-29 | 2022-12-29 | Radio frequency signal amplifying circuit and communication device |
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