CN112367055B

CN112367055B - Overvoltage protection circuit, device and equipment

Info

Publication number: CN112367055B
Application number: CN202011080479.6A
Authority: CN
Inventors: 何敏君; 苏强
Original assignee: Guangzhou Huizhi Microelectronics Co ltd
Current assignee: Guangzhou Huizhi Microelectronics Co ltd
Filing date: 2020-10-10
Publication date: 2024-06-28
Anticipated expiration: 2040-10-10

Abstract

The application discloses an overvoltage protection circuit, a device and equipment, comprising: the radio frequency signal amplifying circuit comprises N first transistors; one end of the voltage regulating circuit is connected with the first voltage source, and the other end of the voltage regulating circuit comprises N voltage output ports which are respectively connected with N first transistor gates; the voltage regulating circuit divides the first voltage source to obtain N control voltages; the N control voltages respectively control the N transistors to be in different working modes; the N control voltages respectively control the N first transistors to be in an operation mode, and the radio frequency signal amplifying circuit amplifies an input radio frequency signal and outputs the amplified radio frequency signal through the radio frequency output end. In this way, the voltage regulating circuit outputs N control voltages to the first voltage source in a voltage division manner according to the working mode of the radio frequency signal amplifying circuit, the N control voltages respectively control the corresponding N first transistors to work in the corresponding modes, and the overvoltage condition of the first transistors is avoided by reasonably setting the values of the N control voltages.

Description

Overvoltage protection circuit, device and equipment

Technical Field

The present disclosure relates to circuit protection, and more particularly, to an overvoltage protection circuit.

Background

The low noise amplifier is generally used as a front end of a radio frequency receiver, and is mainly used for amplifying a received radio frequency signal. Low noise amplifiers typically require low withstand voltage transistors to achieve low noise amplification.

In the prior art, in order to ensure that a low-voltage-resistant transistor is not damaged in any working mode, corresponding voltages are provided for the low-voltage-resistant transistor through different voltage sources in different working modes, so that the situation of avoiding overvoltage of the transistor is achieved. Because the low noise amplifier generally includes a plurality of transistors, each transistor needs to correspond to a different voltage source in different operation modes, so that a plurality of voltage sources exist in the circuit design, which increases the complexity of the circuit design and increases the cost of the circuit design.

Disclosure of Invention

In order to solve the above technical problems, the present application is expected to provide an overvoltage protection circuit.

The technical scheme of the application is realized as follows:

In a first aspect, there is provided an overvoltage protection circuit comprising: the device comprises a first voltage source, a voltage regulating circuit and a radio frequency signal amplifying circuit; the radio frequency signal amplifying circuit comprises N first transistors, wherein N is a positive integer greater than 1;

one end of the voltage regulating circuit is connected with the first voltage source, and the other end of the voltage regulating circuit comprises N voltage output ports which are respectively connected with the grid electrodes of the N first transistors;

The voltage regulating circuit is used for dividing the first voltage source to obtain N control voltages of the N first transistors in different working modes; the N control voltages are respectively used for controlling the N transistors to be in different working modes;

When the N control voltages respectively control the N first transistors to be in an operation mode, the radio frequency signal amplifying circuit is used for amplifying the radio frequency signals input by the radio frequency input end and outputting the radio frequency signals through the radio frequency output end.

In the above scheme, the voltage regulating circuit comprises a switch component; when the switch component is in a first opening and closing state, the voltage regulating circuit outputs first voltage values corresponding to the N first transistors respectively in an operating state; the first voltage value corresponding to each first transistor is located in a corresponding first voltage range, so that the source-drain voltage of each first transistor is smaller than the withstand voltage value of each first transistor; when the switch component is in a second opening and closing state, the voltage regulating circuit outputs second voltage values corresponding to the N first transistors respectively in a standby state; the second voltage value corresponding to each first transistor is located in a corresponding second voltage range, so that the source-drain voltage of each first transistor is smaller than the withstand voltage value of each first transistor.

In the above scheme, the first voltage range of the i-th first transistor in the N first transistors is: the first voltage value is larger than the sum of the threshold voltage and the source voltage of the ith first transistor and smaller than the sum of the threshold voltage and the drain voltage of the ith first transistor; wherein i is a positive integer less than or equal to N; the second voltage range of the 1 st first transistor in the N first transistors is as follows: the second voltage value is less than a first voltage threshold; wherein the gate of the 1 st first transistor is used as the radio frequency input end; the second voltage range of the j-th first transistor in the N first transistors is as follows: the second voltage value is greater than a second voltage threshold; the second voltage threshold is obtained by subtracting the total withstand voltage value of the jth to the nth first transistors from the voltage value of the second voltage source and adding the threshold voltage of the jth first transistor; j is a positive integer greater than 1 and less than or equal to N, and the second voltage source is connected with the drain electrode of the Nth first transistor.

In the above scheme, when N is 2, the voltage regulating circuit includes: a first partial circuit, a second partial circuit and a third partial circuit; the first partial circuit includes: a bias current source, a first resistor and a first switch; the first resistor is connected with the first switch in series and then connected with two ends of the bias current source in parallel; the first voltage source is connected with one end of the bias current source; the second partial circuit includes: a second transistor, a second resistor and a second switch; the drain electrode of the second transistor is connected with the other end of the bias current source, the grid electrode of the second transistor is connected with the drain electrode, and the grid electrode of the second transistor is also used as an output port of the control voltage; the source electrode of the second transistor is connected with one end of the third partial circuit through the second resistor; the second switch is connected in parallel with two ends of the second resistor; the third partial circuit includes: a third switch, a third transistor, and a first capacitor; the drain electrode of the third transistor is connected with the second resistor, the drain electrode of the third transistor is connected with the grid electrode, and the third transistor is grounded through the third switch; a gate of the third transistor serves as an output port of the control voltage; the source electrode of the third transistor is connected with the grid electrode through the first capacitor and is also connected with the grounding end.

In the above scheme, when N is an integer greater than 2, the voltage regulating circuit includes: (N-2) said second partial circuits; the first end of the second partial circuit is the drain electrode of the second transistor, and the second end of the second partial circuit is one end of the second resistor; the second end of the previous second partial circuit is connected to the first end of the next second partial circuit.

In the above solution, the second partial circuit further includes: a third resistor; the third resistor is respectively positioned between the source electrode of the second transistor and the second resistor.

In the above scheme, N bias resistors are connected between the output ports of the N control voltages and the corresponding receiving ports.

In the above scheme, the first opening and closing state is: the first switch and the third switch are in an open state, and the second switch is in a closed state; the second opening and closing state is as follows: the first switch and the third switch are in a closed state, and the second switch is in an open state.

In the above scheme, the radio frequency signal amplifying circuit further includes: the first voltage source, the first inductor, the second inductor, the N first transistors and the N second capacitors; the N first transistors are connected to each other in series; wherein the drain electrode of the previous first transistor is connected with the source electrode of the next first transistor; one end of the 1 st second capacitor is connected with the grid electrode of the 1 st first transistor, and the other end of the 1 st second capacitor is used as the radio frequency input end; the source electrode of the 1 st first transistor is grounded through the first inductor; the grid electrode of the jth first transistor is grounded through the jth second capacitor; the drain electrode of the Nth first transistor is used as the radio frequency output end and is also connected with the second voltage source through the second inductor; wherein j is a positive integer greater than 1 and less than or equal to N.

In the above scheme, the 1 st first transistor is a common source transistor; the jth first transistor is a common gate transistor.

In a second aspect, an overvoltage protection device is provided, comprising: an overvoltage protection circuit as claimed in any one of claims 1 to 10.

In a third aspect, an overvoltage protection device is provided, comprising: the overvoltage protection device of claim 11.

The application discloses an overvoltage protection circuit, comprising: the device comprises a first voltage source, a voltage regulating circuit and a radio frequency signal amplifying circuit; the radio frequency signal amplifying circuit comprises N first transistors, wherein N is a positive integer greater than 1; one end of the voltage regulating circuit is connected with the first voltage source, and the other end of the voltage regulating circuit comprises N voltage output ports which are respectively connected with the grid electrodes of N first transistors; the voltage regulating circuit is used for dividing the first voltage source to obtain N control voltages of N first transistors in different working modes; the N control voltages are used for controlling the N transistors to be in different working modes respectively; when the N control voltages respectively control the N first transistors to be in the operation mode, the radio frequency signal amplifying circuit is used for amplifying the radio frequency signals input by the radio frequency input end and outputting the radio frequency signals through the radio frequency output end. In this way, the voltage regulating circuit outputs N control voltages to the first voltage source in a voltage division manner according to the working mode of the radio frequency signal amplifying circuit, the N control voltages respectively control the corresponding N first transistors to work in the corresponding modes, and the overvoltage condition of the first transistors is avoided by reasonably setting the values of the N control voltages.

Drawings

FIG. 1 is a schematic diagram of a first structure of an overvoltage protection circuit according to an embodiment of the present application;

FIG. 2 is a schematic diagram of a second structure of the overvoltage protection circuit according to an embodiment of the present application;

FIG. 3 is a schematic diagram of a third configuration of an overvoltage protection circuit according to an embodiment of the present application;

FIG. 4 is a schematic diagram of a fourth configuration of an overvoltage protection circuit according to an embodiment of the present application;

FIG. 5 is a schematic diagram of a fifth configuration of an over-voltage protection circuit according to an embodiment of the present application;

fig. 6 is a schematic diagram of a sixth configuration of an overvoltage protection circuit according to an embodiment of the application.

Detailed Description

For a more complete understanding of the nature and the technical content of the embodiments of the present application, reference should be made to the following detailed description of embodiments of the application, taken in conjunction with the accompanying drawings, which are meant to be illustrative only and not limiting of the embodiments of the application.

An embodiment of the present application provides an overvoltage protection circuit, fig. 1 is a schematic diagram of a first component structure of the overvoltage protection circuit in the embodiment of the present application, as shown in fig. 1, where the overvoltage protection circuit includes: a first voltage source 10, a voltage regulating circuit 11 and a radio frequency signal amplifying circuit 12; the rf signal amplifying circuit 12 includes N first transistors, where N is a positive integer greater than 1;

one end of the voltage regulating circuit 11 is connected with the first voltage source 10, and the other end of the voltage regulating circuit comprises N voltage output ports which are respectively connected with the gates of the N first transistors;

The voltage regulating circuit 11 is configured to divide the voltage of the first voltage source 10 to obtain N control voltages of the N first transistors in different working modes; the N control voltages are respectively used for controlling the N first transistors to be in different working modes;

when the N first transistors are in the operation mode, the rf signal amplifying circuit 12 is configured to amplify an rf signal input by the rf input terminal and output the amplified rf signal through the rf output terminal.

It should be noted that, in the low noise amplifier, a low voltage-resistant transistor is generally required to be used to realize low noise amplification, in order to ensure that the first transistor of the low noise amplifier in different working modes cannot be broken down due to overlarge voltage, an overvoltage protection circuit is designed, and based on the working mode of the first transistor, the voltage regulation circuit performs corresponding voltage division operation on the first voltage source, so that the first transistor obtains a control voltage in the corresponding working mode, and normal operation of the first transistor is further ensured.

It should be noted that, because the requirements for amplifying the input rf signal are different, the number of the first transistors in the rf signal amplifying circuit is different, so there are N first transistors in the rf signal amplifying circuit. The number of the first transistors can be dynamically adjusted according to the amplifying requirement of the radio frequency signal.

In some embodiments, the voltage regulation circuit includes a switch assembly therein; when the switch component is in a first opening and closing state, the voltage regulating circuit outputs first voltage values corresponding to the N first transistors respectively in an operating state; the first voltage value corresponding to each first transistor is located in a corresponding first voltage range, so that the source-drain voltage of each first transistor is smaller than the withstand voltage value of each first transistor; when the switch component is in a second opening and closing state, the voltage regulating circuit outputs second voltage values corresponding to the N first transistors respectively in a standby state; the second voltage value corresponding to each first transistor is located in a corresponding second voltage range, so that the source-drain voltage of each first transistor is smaller than the withstand voltage value of each first transistor.

The withstand voltage value of the transistor means the maximum operating voltage of the transistor.

It should be noted that, the switch assembly in the voltage regulating circuit includes a plurality of switches, and the voltage regulating circuit is made to be a voltage regulating circuit in a corresponding working mode by adjusting the opening and closing states of the plurality of switches. The voltage regulating circuit in the corresponding working mode performs corresponding voltage division operation on the first voltage source, and the first transistor obtains control voltage in the corresponding working mode, so that normal operation of the first transistor is ensured.

In addition, when the voltage value input by the grid electrode of the first transistor is in a corresponding voltage range, the drain-source voltage of the first transistor is smaller than the voltage withstand value of the first transistor, so that the normal operation of the first transistor is ensured.

In some embodiments, the first voltage range of the i-th first transistor of the N first transistors is: the first voltage value is larger than the sum of the threshold voltage and the source voltage of the ith first transistor and smaller than the sum of the threshold voltage and the drain voltage of the ith first transistor; wherein i is a positive integer less than or equal to N; the second voltage range of the 1 st first transistor in the N first transistors is as follows: the second voltage value is less than a first voltage threshold; wherein the gate of the 1 st first transistor is used as the radio frequency input end; the second voltage range of the j-th first transistor in the N first transistors is as follows: the second voltage value is greater than a second voltage threshold; the second voltage threshold is obtained by subtracting the total withstand voltage value of the jth to the nth first transistors from the voltage value of the second voltage source and adding the threshold voltage of the jth first transistor; j is a positive integer greater than 1 and less than or equal to N, and the second voltage source is connected with the drain electrode of the Nth first transistor.

It should be noted that, when the transistor is switched from depletion to inversion, a state is experienced in which the electron concentration on the silicon surface is equal to the hole concentration, and the transistor is in a critical on state, and the gate voltage is defined as the threshold voltage. In addition, the gate of the 1 st first transistor mentioned below serves as a radio frequency input terminal.

For example, if there are 3 first transistors in the rf signal amplifying circuit, when the rf signal amplifying circuit is in the operation mode, the first voltage value corresponding to the gate of the 1 st first transistor is greater than the sum of the threshold voltage and the source voltage of the 1 st first transistor and less than the sum of the threshold voltage and the drain voltage of the 1 st first transistor; the first voltage value corresponding to the grid electrode of the 2 nd first transistor is larger than the sum of the threshold voltage and the source voltage of the 2 nd first transistor and smaller than the sum of the threshold voltage and the drain voltage of the 2 nd first transistor; the first voltage value corresponding to the grid electrode of the 3 rd first transistor is larger than the sum of the threshold voltage and the source voltage of the 3 rd first transistor and smaller than the sum of the threshold voltage and the drain voltage of the 3 rd first transistor.

When the radio frequency signal amplifying circuit is in the standby mode, the second voltage value corresponding to the gate of the 1 st first transistor is smaller than the first voltage threshold, where the second voltage value corresponding to the gate of the 1 st first transistor may be zero; the second voltage value corresponding to the grid electrode of the 2 nd first transistor is larger than the drain voltage of the 3 rd first transistor minus the voltage withstand value of the 2 nd first transistor and the voltage withstand value of the 3 rd first transistor, and the threshold voltage of the 2 nd first transistor is added; the second voltage value corresponding to the grid electrode of the 3 rd first transistor is larger than the drain voltage of the 3 rd first transistor minus the withstand voltage value of the 3 rd first transistor, and the threshold voltage of the 3 rd first transistor is added.

In addition, it should be noted that the voltage adjusting circuit and the radio frequency signal amplifying circuit further include other matching components, for example, one or more combinations of resistors, inductors and capacitors. The voltage regulating circuit outputs N corresponding control voltages to the first voltage source by dividing according to the working modes of N first transistors in the radio frequency signal amplifying circuit through one or more component combination voltage regulating circuits and radio frequency signal amplifying circuits, so that the N first transistors are controlled to be in the corresponding working modes respectively based on the N control voltages, and the situation of avoiding the overvoltage of the first transistors is achieved.

In this way, the voltage regulating circuit outputs N control voltages to the first voltage source in a voltage division manner according to the working mode of the radio frequency signal amplifying circuit, the N control voltages respectively control the corresponding N first transistors to work in the corresponding modes, and the overvoltage condition of the first transistors is avoided by reasonably setting the values of the N control voltages.

For the first structural schematic diagram of the overvoltage protection circuit in fig. 1, the present application provides a specific circuit structure diagram, and fig. 2 is a second structural schematic diagram of the overvoltage protection circuit in the embodiment of the present application.

As shown in fig. 2, when N takes a value of 2, the voltage adjusting circuit includes: a first partial circuit, a second partial circuit and a third partial circuit;

Wherein the first partial circuit comprises: a current source IBias, a first resistor R1 and a first switch S1. The concrete connection mode is as follows: r1 and S1 are connected in series and then connected in parallel to two ends of the bias current source IBias, and the first voltage source VBAT is connected with one end of the bias current source IBias.

The second partial circuit includes: a second transistor M21, a second resistor R21 and a second switch S21. The concrete connection mode is as follows: the drain electrode of the M21 tube is connected with the other end of the bias current source IBias, the grid electrode of the M21 tube is connected with the drain electrode, and the grid electrode of the M21 tube is also used as a port for outputting control voltage; the source electrode of the M21 tube is connected with one end of the third part of circuit through R21; s21 is connected in parallel at two ends of R21.

The third partial circuit includes: a third switch S3, a third transistor M3 and a first capacitor C1. The concrete connection mode is as follows: the drain electrode of the M3 pipe is connected with R21, the drain electrode of the M3 pipe is connected with the grid electrode, and the drain electrode of the M3 pipe is grounded through S3; the grid electrode of the M3 tube is used as one port for outputting control voltage; the source electrode of the M3 pipe is connected with the grid electrode through C1, and the source electrode of the M3 pipe is grounded.

Here, C1 is connected between the gate and the source of the M3 pipe for reducing radio frequency leakage from the gate of the M11 pipe to the voltage regulating circuit so that the voltage regulating circuit is not affected by the radio frequency signal.

The second part of the circuit further comprises: first bias resistor RBias11. The concrete connection mode is as follows: RBias11 a is arranged between an output control voltage port of the second partial circuit and a corresponding receiving control voltage port in the radio frequency signal amplifying circuit, specifically one end of RBias a is connected with a grid electrode of the M21 tube, the other end of RBias a is connected with a grid electrode of the M12 tube, and RBias a is used for reducing the influence of noise generated by the voltage regulating circuit on the noise performance of the M12 tube.

The third part of the circuit further comprises: and a second bias resistor RBias2. The concrete connection mode is as follows: RBias2 is disposed between the output control voltage port of the third circuit and the corresponding receiving control voltage port in the rf signal amplifying circuit, specifically, one end of RBias is connected to the gate of the M3 tube, and the other end is connected to the gate of the M11 tube, and RBias2 is used for reducing the influence of noise generated by the voltage regulating circuit on the noise performance of the M11 tube.

The radio frequency signal amplifying circuit specifically comprises: VDD, L1, L2, M11 pipe, M12 pipe, C21 and C22. The concrete connection mode is as follows: the radio frequency input end RF_in is connected with the grid electrode of the M11 tube through C21, the source electrode of the M11 tube is grounded through L1, and the drain electrode of the M11 tube is connected with the source electrode of the M12 tube; the drain electrode of the M12 tube is used as a radio frequency output end RF_out and is also connected with VDD through L2; the gate of M12 is grounded through C22.

Here, rf_in serves as an input terminal of the radio frequency signal amplifying circuit, and C21 connected to rf_in functions as a dc-blocking circuit.

Here, C21, C22 are driven by the control voltages of the gates of the corresponding M11, M12 tubes, respectively, so that the corresponding M11, M12 tubes are provided with a radio frequency ground.

Fig. 3 is a schematic diagram of a third component structure of an overvoltage protection circuit according to an embodiment of the present application, and as shown in fig. 3, a third resistor R31 is added on the basis of fig. 2, and the specific connection manner is as follows: r31 is located between the source of the M21 tube and R21.

In addition, on the basis of fig. 2 and 3, N may be an integer greater than 2, where the voltage adjusting circuit further includes: (N-2) second partial circuits;

The first end of the second partial circuit is the drain electrode of the second transistor, and the second end is one end of the second resistor; the second end of the previous second partial circuit is connected to the first end of the next second partial circuit.

Illustratively, when N is an integer having a value of 4, the second partial circuit including the M21 pipe is used as a first second partial circuit, the second partial circuit including the M22 pipe is used as a second partial circuit, and the second partial circuit including the M23 pipe is used as a third second partial circuit. One end of R21 in the first second partial circuit is connected with the drain electrode of M22 pipe in the second partial circuit, and one end of R22 in the second partial circuit is connected with the drain electrode of M23 pipe in the third second partial circuit, so that the three second partial circuits are connected in series.

In addition, the second partial circuits are (N-1) and respectively provide control voltages for the gates of the (N-1) first transistors in the radio frequency signal amplifying circuit. When the number of the second partial circuits is (N-1), the number of the components of the second partial circuits is (N-1), and the connection mode between the components is specifically stated when the value of N is 2, which is not stated here.

The radio frequency signal amplifying circuit further includes: (N-2) first transistors. The concrete connection mode is as follows: the drain of the previous first transistor is connected to the source of the next first transistor.

Note that the M11 transistor is a common source transistor, that is, the gate of the M11 transistor serves as a signal input terminal, the drain serves as an output terminal, and the source serves as a common terminal. All the first transistors except the M11 transistor are common-gate transistors, i.e., the source is the signal input terminal, the drain is the output terminal, and the gate is the common terminal.

Next, for the case that the radio frequency signal amplifying circuit includes 3 transistors, i.e., n=3, the voltage adjusting circuit includes two second partial circuits, and fig. 4 is a schematic diagram of a fourth component structure of the overvoltage protection circuit in the embodiment of the present application.

As shown in fig. 4, the 1 st second partial circuit specifically includes: m21 tube, R31, S21, R21 and RBias11. The concrete connection mode is as follows: the drain electrode of the M21 tube is connected with one end of the IB in the first partial circuit, and the drain electrode of the M21 tube is connected with the grid electrode; the grid electrode of the M21 tube is connected with one end of RBias, and the other end of RBias is used as a first output control voltage port; the source electrode of the M21 tube is connected with a second partial circuit in series through R31 and S21 which are connected in series, and S21 is connected at two ends of R21 in parallel.

The 2 nd second partial circuit specifically comprises: m22 tube, R32, S22, R22 and RBias12. The concrete connection mode is as follows: the drain electrode of the M22 pipe is connected with one end of the R21, and the drain electrode of the M22 pipe is connected with the grid electrode; the grid electrode of the M22 tube is connected with one end of RBias, and the other end of RBias is used as a second output control voltage port; the source electrode of the M22 tube is connected with the drain electrode of the M3 tube in the third partial circuit through R32 and S22 which are connected in series, and S22 is connected in parallel with two ends of R22.

The radio frequency signal amplifying circuit specifically comprises: VDD, L1, L2, M11, M12, M13, and C2. The concrete connection mode is as follows: the radio frequency input end RF_in is connected with the grid electrode of the M11 tube through C2, the source electrode of the M11 tube is grounded through L1, and the drain electrode of the M11 tube is connected with the source electrode of the M12 tube; the drain electrode of the M12 pipe is connected with the source electrode of the M13 pipe, the drain electrode of the M13 pipe is connected with the radio frequency output end RF_out and is also connected with the VDD through L2; the gate of M12 is grounded through C32 and the gate of M13 is grounded through C31.

C2 functions as a dc blocking function. L2 plays a role in isolating communication.

The following is based on fig. 4, and the present application provides a corresponding overvoltage protection circuit for different operation modes of the rf signal amplifying circuit.

The application provides an overvoltage protection circuit when a radio frequency signal amplifying circuit is in an operation mode. Fig. 5 is a schematic diagram of a fifth configuration of an overvoltage protection circuit according to an embodiment of the application.

The switch assembly in the voltage regulating circuit is in a first open-close state. Here, the first open/close state is that the first switch S1 and the third switch S3 are in an open state, and the second switches S21, S22 are in a closed state.

As shown in fig. 5, the first part of the voltage regulating circuit includes IB, and VBAT is connected to one end of the 2 second part of circuits connected in series through IB.

The 1 st second partial circuit specifically includes: m21 tube, R31 and RBias11. The concrete connection mode is as follows: the drain electrode of the M21 pipe is connected with one end of the IB, and the drain electrode of the M21 pipe is connected with the grid electrode; one end of RBias is connected with the grid electrode of the M21 tube, and the other end of RBias is used as a first output control voltage port; the source of the M21 tube is connected in series with the second partial circuit through R31.

The 2 nd second partial circuit specifically comprises: m22 tube, R32, and RBias. The concrete connection mode is as follows: the drain electrode of the M22 pipe is connected with one end of the R31, and the drain electrode of the M22 pipe is connected with the grid electrode; the grid electrode of the M22 tube is connected with one end of RBias, and the other end of RBias is used as a second output control voltage port; the source of the M22 tube is connected with the drain of the M3 tube in the third part of the circuit through R32.

The third part of the circuit specifically comprises: m3 tube, C1 and RBias2. The concrete connection mode is as follows: the drain electrode of the M3 pipe is connected with one end of the R32, and the drain electrode of the M3 pipe is connected with the grid electrode; the grid electrode of the M3 tube is connected with one end of RBias and the other end of RBias is used as a third output control voltage port; the grid electrode of the M3 tube is also connected with the source electrode through C1; the source of the M3 tube is grounded.

The specific connection manner of each component in the rf signal amplifying circuit is already described in detail in fig. 3, and will not be described again here.

It should be noted that, when the drain electrode of the M21 tube is connected to the gate electrode, the M21 tube is equivalent to a diode that is turned on in the forward direction, so that the M21 tube is in a turned-on state. When the drain electrode of the M22 tube is connected with the grid electrode, the M22 tube is equivalent to a diode which is conducted in the forward direction, so that the M22 tube is in a conducting state. When the drain electrode of the M3 tube is connected with the grid electrode, the M3 tube is equivalent to a diode which is conducted in the forward direction, so that the M3 tube is in a conducting state.

The voltage of the gate of the M11 tube is a voltage divided by the M3 tube (specifically, the gate-source voltage Vgs3 of the M3 tube). In order for the M11 tube to operate normally in the operating mode, vgs3 is greater than the sum of the threshold voltage and the source voltage of the M11 tube and less than the sum of the threshold voltage and the drain voltage of the M11 tube. Therefore, the source-drain voltage of the M11 tube can be controlled to be lower than the withstand voltage value of the M11 tube, and the normal operation of the M11 tube is further ensured. In addition, the M11 tube and the M3 tube belong to transistors with the same size and the same model, so that the influence on the performance of the overvoltage protection circuit caused by the process angle and the temperature can be counteracted in the operation mode.

Note that the gate voltage of the M12 tube (i.e., vs 12) is the sum of the voltage divided by the M22 tube (specifically, the gate-source voltage Vgs22 of the M22 tube), the voltage divided by the R32 tube, and the voltage divided by the M3 tube, i.e., vs 12=vgs 3+vgs 22+r32. In order to make the M12 tube normally operate in the operation mode, the gate voltage of the M12 tube needs to be greater than the sum of the threshold voltage and the source voltage of the M12 tube and less than the sum of the threshold voltage and the drain voltage of the M12 tube. By adjusting R32, the source-drain voltage of the M12 pipe is controlled to be lower than the withstand voltage value of the M12 pipe, so that the normal operation of the M12 pipe is ensured. In addition, the M12 tube and the M22 tube belong to transistors with the same size and the same model, so that the influence on the performance of the overvoltage protection circuit caused by process angles and temperature can be counteracted in an operation mode.

The voltage of the gate electrode of the M13 tube (i.e., vgs 13) is the sum of the voltage divided by the M21 tube (specifically, the gate-source voltage Vgs21 of the M21 tube), the voltage divided by the R31 tube, the voltage divided by the M22 tube, the voltage divided by the R32 tube and the voltage divided by the M3 tube, i.e., v13=vgs21+vgs22+vgs3+ (r32+r31) ×ibias. In order to make the M13 tube normally operate in the operation mode, the gate voltage of the M13 tube needs to be greater than the sum of the threshold voltage and the source voltage of the M13 tube and less than the sum of the threshold voltage and the drain voltage of the M13 tube. By adjusting R32 and R31, the source-drain voltage of the M13 pipe is controlled to be lower than the withstand voltage value of the M13 pipe, so that the normal operation of the M13 pipe is ensured. In addition, the M13 tube and the M21 tube belong to transistors with the same size and the same model, so that the influence on the performance of the overvoltage protection circuit caused by the process angle and the temperature can be counteracted in the operation mode.

The application provides an overvoltage protection circuit when a radio frequency signal amplifying circuit is in a standby mode. Fig. 6 is a schematic diagram of a sixth configuration of an overvoltage protection circuit according to an embodiment of the application.

The switch assembly in the voltage regulating circuit is in a second open-close state. Here, the second open/close state is a state in which the first switch S1 and the third switch S3 are closed, and the second switches S21 and S22 are opened.

As shown in fig. 6, the first part of the voltage regulating circuit includes R1, and VBAT is connected to one end of the 2 second part of circuits connected in series through R1.

The first and second partial circuits specifically comprise: m21 tube, R31, R21 and RBias11. The concrete connection mode is as follows: the drain electrode of the M21 pipe is connected with one end of the R1, and the drain electrode of the M21 pipe is connected with the grid electrode; one end of RBias is connected with the grid electrode of the M21 tube, and the other end of RBias is used as a first output control voltage port; the source electrode of the M21 tube is connected with a second partial circuit through R31 and R21 which are connected in series.

The second partial circuit specifically includes: m22 pipe, R32, R22 and RBias. The concrete connection mode is as follows: the drain electrode of the M22 pipe is connected with one end of the R31, and the drain electrode of the M22 pipe is connected with the grid electrode; the grid electrode of the M22 tube is connected with one end of RBias, and the other end of RBias is used as a second output control voltage port; the source electrode of the M22 tube is connected with the drain electrode of the M3 tube in the third partial circuit through R32 and R22 which are connected in series.

The third part of the circuit specifically comprises: c1 and RBias2. The concrete connection mode is as follows: one end of RBias is grounded and is also grounded through C2; RBias2 are provided as a third output control voltage port.

It should be noted that the M11 tube is grounded through RBias, which indicates that the gate voltage of the M11 tube is zero, so that the M11 tube is in a cut-off state, and thus, the situation that the M11 tube cannot be over-voltage is ensured.

The gate voltage of the M12 tube (i.e., vs 12) is the sum of the voltage divided by the M22 tube (i.e., vgs 22), the voltage divided by the R32 and the voltage divided by the R22, i.e., vs 12=vgs 22+ (r32+r22) ×i, where i= (VBAT-Vgs 21-Vgs 22)/(r1+r21+r22+r31+r32). In order to make the M12 tube normally operate in the standby mode, the gate voltage of the M12 tube needs to be larger than VDD minus the threshold voltage of the M12 tube, minus the threshold voltage of the M13 tube, plus the withstand voltage value of the M12 tube. By adjusting R22, the source-drain voltage of the M12 pipe is controlled to be lower than the withstand voltage value of the M12 pipe, so that the normal operation of the M12 pipe is ensured. In addition, when the R22 is adjusted to ensure that the source-drain voltage of the M12 pipe is lower than the withstand voltage value of the M12 pipe in the standby mode, the source-drain voltage of the M12 pipe in the operation mode is not affected. In addition, the M12 tube and the M22 tube belong to transistors with the same size and the same model, so that the influence on the performance of the overvoltage protection circuit caused by process angles and temperature can be counteracted in an operation mode.

The voltage of the gate of the M13 tube (i.e., vs 13) is the sum of the voltage of the M21 tube (i.e., vgs 21), the voltage of the R31 tube (i.e., vgs 22) and the voltage of the R32 tube (i.e., vs 13=vgs 21+vgs22+ (r32+r22)) I. In order to make the M13 tube normally operate in the standby mode, the gate voltage of the M13 tube needs to be larger than VDD minus the threshold voltage of the M13 tube, plus the withstand voltage value of the M13 tube. By adjusting R22 and R32, the source-drain voltage of the M13 pipe is controlled to be lower than the withstand voltage value of the M13 pipe, so that the normal operation of the M13 pipe is ensured. In addition, when the source-drain voltage of the M13 pipe is lower than the withstand voltage value of the M13 pipe by adjusting R22 and R32 in the standby mode, the source-drain voltage of the M13 pipe in the operation mode is not affected. In addition, the M13 tube and the M21 tube belong to transistors with the same size and the same model, so that the influence on the performance of the overvoltage protection circuit caused by the process angle and the temperature can be counteracted in the operation mode.

The embodiment of the application also discloses an overvoltage protection device, which comprises: any of the above embodiments of the present application may further comprise an overvoltage protection circuit.

The embodiment of the application also discloses overvoltage protection equipment, and the overvoltage protection device comprises: the overvoltage protection device in the above embodiment of the application.

The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. An overvoltage protection circuit, characterized in that the overvoltage protection circuit comprises: the device comprises a first voltage source, a voltage regulating circuit and a radio frequency signal amplifying circuit; the radio frequency signal amplifying circuit comprises N first transistors, wherein N is a positive integer greater than 1;

The voltage regulating circuit comprises a switch component;

When the switch component is in a first opening and closing state, the voltage regulating circuit outputs first voltage values corresponding to the N first transistors respectively in an operating state; the first voltage value corresponding to each first transistor is located in a corresponding first voltage range, so that the source-drain voltage of each first transistor is smaller than the withstand voltage value of each first transistor;

2. The overvoltage protection circuit according to claim 1, wherein when the switch assembly is in the second open-close state, the voltage regulating circuit outputs second voltage values corresponding to the N first transistors in the standby state, respectively; the second voltage value corresponding to each first transistor is located in a corresponding second voltage range, so that the source-drain voltage of each first transistor is smaller than the withstand voltage value of each first transistor.

3. The overvoltage protection circuit of claim 2, wherein,

The first voltage range of the ith first transistor in the N first transistors is as follows: the first voltage value is larger than the sum of the threshold voltage and the source voltage of the ith first transistor and smaller than the sum of the threshold voltage and the drain voltage of the ith first transistor; wherein i is a positive integer less than or equal to N;

The second voltage range of the 1 st first transistor in the N first transistors is as follows: the second voltage value is less than a first voltage threshold; wherein the gate of the 1 st first transistor is used as the radio frequency input end;

the second voltage range of the j-th first transistor in the N first transistors is as follows: the second voltage value is greater than a second voltage threshold; the second voltage threshold is obtained by subtracting the total withstand voltage value of the jth to the nth first transistors from the voltage value of the second voltage source and adding the threshold voltage of the jth first transistor; j is a positive integer greater than 1 and less than or equal to N, and the second voltage source is connected with the drain electrode of the Nth first transistor.

4. The overvoltage protection circuit of claim 2, wherein,

When N is taken to be 2, the voltage regulating circuit comprises: a first partial circuit, a second partial circuit and a third partial circuit;

The first partial circuit includes: a bias current source, a first resistor and a first switch; the first resistor is connected with the first switch in series and then connected with two ends of the bias current source in parallel; the first voltage source is connected with one end of the bias current source;

The second partial circuit includes: a second transistor, a second resistor and a second switch; the drain electrode of the second transistor is connected with the other end of the bias current source, the grid electrode of the second transistor is connected with the drain electrode, and the grid electrode of the second transistor is also used as an output port of the control voltage; the source electrode of the second transistor is connected with one end of the third partial circuit through the second resistor; the second switch is connected in parallel with two ends of the second resistor;

The third partial circuit includes: a third switch, a third transistor, and a first capacitor; the drain electrode of the third transistor is connected with the second resistor, the drain electrode of the third transistor is connected with the grid electrode, and the third transistor is grounded through the third switch; a gate of the third transistor serves as an output port of the control voltage; the source electrode of the third transistor is connected with the grid electrode through the first capacitor and is also connected with the grounding end.

5. The overvoltage protection circuit of claim 4, wherein,

When N is an integer greater than 2, the voltage regulating circuit comprises: (N-2) said second partial circuits;

the first end of the second partial circuit is the drain electrode of the second transistor, and the second end of the second partial circuit is one end of the second resistor;

The second end of the previous second partial circuit is connected to the first end of the next second partial circuit.

6. The overvoltage protection circuit of claim 5, wherein,

The second partial circuit further includes: a third resistor;

the third resistor is respectively positioned between the source electrode of the second transistor and the second resistor.

7. The overvoltage protection circuit according to claim 5 or 6, wherein,

N bias resistors are connected between the output ports of the N control voltages and the corresponding receiving ports.

8. The overvoltage protection circuit of claim 4, wherein,

The first opening and closing state is as follows: the first switch and the third switch are in an open state, and the second switch is in a closed state;

the second opening and closing state is as follows: the first switch and the third switch are in a closed state, and the second switch is in an open state.

9. The overvoltage protection circuit of claim 1, wherein,

The radio frequency signal amplifying circuit further includes: the first voltage source, the first inductor, the second inductor, the N first transistors and the N second capacitors;

The N first transistors are connected to each other in series; wherein the drain electrode of the previous first transistor is connected with the source electrode of the next first transistor;

One end of the 1 st second capacitor is connected with the grid electrode of the 1 st first transistor, and the other end of the 1 st second capacitor is used as the radio frequency input end; the source electrode of the 1 st first transistor is grounded through the first inductor;

The grid electrode of the jth first transistor is grounded through the jth second capacitor; the drain electrode of the Nth first transistor is used as the radio frequency output end and is also connected with the second voltage source through the second inductor; wherein j is a positive integer greater than 1 and less than or equal to N.

10. The overvoltage protection circuit of claim 9, wherein,

The 1 st first transistor is a common source transistor;

The jth first transistor is a common gate transistor.

11. An overvoltage protection device, characterized in that it comprises:

an overvoltage protection circuit as claimed in any one of claims 1 to 10.

12. An overvoltage protection device, characterized in that it comprises:

the overvoltage protection device of claim 11.