CN115662924B - Cleaning control system and method for semiconductor substrate and cleaning equipment - Google Patents
Cleaning control system and method for semiconductor substrate and cleaning equipment Download PDFInfo
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Abstract
The invention discloses a cleaning control system and a method of a semiconductor substrate and cleaning equipment, wherein the cleaning control system is used for realizing the cleaning control of the semiconductor substrate which is placed in a cleaning reaction cavity and needs to be cleaned, and comprises: the gas conveying control unit is used for conveying a first type of gas to the clean reaction cavity, wherein the first type of gas at least comprises a first type of reaction gas participating in forming an intermediate; the temperature control unit is used for heating the first type of reaction gas to a first temperature required by the first type of reaction gas to participate in a reaction to form an intermediate so that the first type of reaction gas reacts to generate the intermediate; the first cleaning control unit is used for removing oxygen-containing pollutants on the surface of the semiconductor substrate through the intermediate body. Therefore, the method can remove the oxygen-containing pollutants on the surface of the semiconductor substrate in a mode of heating to form the intermediate, improves the controllability of removing the oxygen-containing pollutants, and is beneficial to improving the removal effect of the oxygen-containing pollutants.
Description
Technical Field
The invention relates to the technical field of intelligent control, in particular to a cleaning control system and method for a semiconductor substrate and cleaning equipment.
Background
The chip is fabricated by stacking layers of material on a semiconductor substrate to form the final semiconductor structure. Prior to the deposition of materials onto semiconductor substrates, the semiconductor substrate surface is susceptible to contaminants, one of the most common contaminants being oxygen-containing contaminants (also referred to as oxygen-based contaminants), due to the presence of processing residues on the semiconductor substrate and/or exposure of the semiconductor substrate to environmental contaminants as a result of previous processing steps. In order to improve the quality of the chip, it is necessary to remove oxygen-containing contaminants present on the semiconductor substrate.
Currently, the removal of oxygen-containing contaminants from the surface of semiconductor substrates is mainly achieved by means of remote plasma. However, it is found that the plasma is a highly reactive substance, which is active and not easily controlled, and many kinds of radicals in the plasma are easily recombined, resulting in a decrease in the number of active radicals, which results in a decrease in the removal effect of the oxygen-containing contaminants.
Therefore, it is very important to provide a new method for removing oxygen-containing contaminants to improve the removal effect of oxygen-containing contaminants on the surface of the semiconductor substrate.
Disclosure of Invention
The invention provides a cleaning control system and method for a semiconductor substrate and cleaning equipment, which can remove oxygen-containing pollutants on the surface of the semiconductor substrate in a manner of heating to form an intermediate, improve controllability in removing the oxygen-containing pollutants and facilitate improvement of removal effect of the oxygen-containing pollutants.
In order to solve the above technical problems, a first aspect of the present invention discloses a cleaning control system for a semiconductor substrate, wherein when the semiconductor substrate needs to be cleaned, the semiconductor substrate is placed in a cleaning reaction chamber; the cleaning control system is used for realizing cleaning control on the semiconductor substrate which is placed in the cleaning reaction cavity and needs to be cleaned;
wherein the cleaning control system comprises:
a gas delivery control unit, configured to deliver a first type of gas to the clean reaction chamber, where the first type of gas at least includes a first type of reactive gas that participates in forming an intermediate body, and the intermediate body is used to remove oxygen-containing contaminants from the surface of the semiconductor substrate;
the temperature control unit is used for heating the first type of reaction gas to a first temperature required by the first type of reaction gas to participate in the reaction to form the intermediate, so that the first type of reaction gas reacts to generate the intermediate;
and the first cleaning control unit is used for removing oxygen-containing pollutants on the surface of the semiconductor substrate through the intermediate body.
When removing oxygen-containing pollutants on the surface of a semiconductor substrate, the intermediate is generated in the prior art in a way of combining plasma with NF3/NH3, and the plasma is a high-activity substance and is relatively active and jumps to generate the intermediateThe reaction process is not easy to control, which leads to the reduction of process reproducibility, and in addition, various free radicals (such as NF. Cndot., NF 2. Cndot., etc.) in the plasma are easy to recombine, which leads to the reduction of active free radicals, which is not beneficial to improving the removal effect of oxygen-containing pollutants. In the first aspect of the present invention, an intermediate can be formed by heating when removing the oxygen-containing contaminant on the surface of the semiconductor substrate, and compared with the intermediate formed by plasma in the prior art, the intermediate formed by heating prevents the residual fluorine-containing radical from being adsorbed on the wall of the clean reaction chamber in the plasma method in the prior art, and also prevents the fluorine-containing radical from being easily combined with the hydrogen-containing plasma used in the carbon-containing contaminant removal process in the plasma method in the prior art, thereby improving the controllability of the reaction, making the heating process more stable, facilitating the formation of the intermediate in order, and further facilitating the improvement of the removal effect of the oxygen-containing contaminant on the surface of the semiconductor substrate. In addition, in the conventional method for removing oxygen-containing contaminants by using plasma, the conformality of the finally prepared semiconductor substrate is poor due to the non-uniform plasma distribution (for example, the non-uniform plasma distribution caused by the sheath voltage formed by the wall surface area); on the contrary, the pollutant removing process has high conformality to the semiconductor substrate, and in the oxygen-containing pollutant removing process, plasma is not introduced, so that the etching to the bottom layer of the semiconductor substrate is reduced, and the condition that other particle pollutants are introduced due to collision with the inner wall of the clean reaction cavity is further reduced. In addition, compared with the plasma method in the prior art, the method can also be used for SiO 2 the/SiN aspect has higher removal selection ratio, such as: the removal selectivity of the method for removing the oxygen-containing pollutants by heating is more than 20, which is improved by more than 5 times compared with the removal selectivity of the plasma method in the prior art (such as more than 3.5.
As an alternative embodiment, in the first aspect of the present invention, the first cleaning control unit includes:
the first cleaning control subunit is used for controlling the intermediate to react with the oxygen-containing pollutant on the surface of the semiconductor substrate at a second temperature to generate a solid byproduct;
a second clean control subunit for heating the solid byproduct to sublimate the solid byproduct at a third temperature;
and the third cleaning control subunit is used for removing the first byproduct gas formed after the solid byproduct is sublimated.
In the first aspect of the invention, after the intermediate is formed by heating, the intermediate and the oxygen-containing contaminant on the surface of the semiconductor substrate can be further controlled to react at a desired reaction temperature to form a solid by-product, and the solid by-product is removed by sublimating the solid by-product, so as to effectively remove the oxygen-containing contaminant. Furthermore, because the solid byproduct generated after the reaction between the intermediate and the oxygen-containing contaminant is in a solid state and covers the surface of the semiconductor substrate, the solid byproduct can be prevented from being further removed, so that the process of generating the solid byproduct by the intermediate and the oxygen-containing contaminant and the process of removing the solid byproduct can be operated circularly, for example, repeatedly executed for 1 to 4 times, so as to improve the removal effect of the oxygen-containing contaminant.
As an optional implementation manner, in the first aspect of the present invention, a fluid distribution unit and/or a substrate holder unit for carrying the semiconductor substrate placed in the clean reaction chamber is further disposed in the clean reaction chamber;
the specific way of controlling the intermediate body to react with the oxygen-containing pollutant on the surface of the semiconductor substrate at the second temperature by the first cleaning control subunit to generate the solid byproduct comprises the following steps:
the substrate carrying seat unit is controlled to bear the semiconductor substrate to be located at a first horizontal position, and a temperature regulation and control module corresponding to the substrate carrying seat unit provides a second temperature required by the intermediate body and oxygen-containing pollutants on the surface of the semiconductor substrate to react to generate solid byproducts, wherein when the semiconductor substrate is located at the first horizontal position and the temperature regulation and control module corresponding to the substrate carrying seat unit provides the second temperature, the intermediate body and the oxygen-containing pollutants on the surface of the semiconductor substrate react to generate the solid byproducts, so that when the oxygen-containing pollutants are removed through the intermediate body, the temperature regulation and control module corresponding to the substrate carrying seat unit provides the second temperature required by the reaction, and the temperature control flexibility and the temperature control efficiency are improved;
and/or the presence of a gas in the gas,
the second clean control subunit heats the solid byproduct, and a specific way of sublimating the solid byproduct at a third temperature includes:
controlling the substrate carrier unit to bear the semiconductor substrate to be located at a second horizontal position, and providing a third temperature required for sublimation of the solid byproducts based on a temperature regulation module corresponding to the fluid distribution unit in the clean reaction chamber, wherein the solid byproducts undergo sublimation reaction at the third temperature;
and/or the presence of a gas in the gas,
the specific manner of heating the first type of reaction gas to the first temperature required for the first type of reaction gas to participate in the reaction to form the intermediate by the temperature control unit includes:
and controlling a temperature regulation module corresponding to the fluid distribution unit to provide the first type of reaction gas to be heated to a first temperature required for the first type of reaction gas to participate in the reaction to form the intermediate.
Wherein, the height of the second horizontal position is higher than that of the first horizontal position.
In the first aspect of the present invention, the substrate carrier unit is used for carrying the semiconductor substrate, which is beneficial to realizing flexibility in controlling the position (such as height) of the semiconductor substrate, and is beneficial to improving the reaction efficiency, and further beneficial to improving the removal efficiency of oxygen-containing pollutants. In addition, the fluid distribution unit in the clean reaction chamber is equipped with a plurality of holes, can realize gaseous evenly distributed, and then realize gaseous fully combining, be favorable to improving the efficiency that the heating formed the midbody, it is further, the fluid distribution unit in the clean reaction chamber can also have corresponding temperature regulation and control module, heating function has, a temperature for adjusting near regional the fluid distribution unit, and then can provide the required reaction temperature of reaction formation midbody and/or provide the required reaction temperature of solid by-product sublimation, be favorable to improving the required efficiency of providing of temperature, and then be favorable to improving reaction efficiency.
As an alternative embodiment, in the first aspect of the present invention, the specific way of controlling the intermediate body to react with the oxygen-containing contaminant on the surface of the semiconductor substrate at the second temperature to generate the solid byproduct by the first cleaning control subunit includes:
the first cleaning control subunit determines a byproduct generation influence factor; wherein the byproduct generation influencing factor comprises one or more combination of growth temperature factor, growth pressure factor, gas composition factor and gas flow characteristic factor;
the first cleaning control subunit generates a generation control parameter corresponding to the byproduct generation influence factor according to a predetermined target distribution requirement and/or a predetermined target particle size requirement;
the first cleaning control subunit controls the intermediate to react with the oxygen-containing pollutant on the surface of the semiconductor substrate at a second temperature under the control of the generation control parameter to generate a solid byproduct.
In the first aspect of the invention, in the process of generating the solid byproduct by reacting the intermediate with the oxygen-containing pollutant, the intelligent control of the particle size and the distribution of the solid byproduct can be further realized through the generation control parameters corresponding to the determined byproduct generation influence factors, so as to generate the solid byproduct with smaller particle size and uniform particle size distribution, and solve the problem of shielding effect caused by uneven particle distribution and large flake shape of the solid byproduct.
As an optional implementation manner, in the first aspect of the present invention, the cleanliness control system further includes:
the plasma conveying control unit is used for conveying the plasma effluent into the clean reaction cavity; the plasma effluent is generated by introducing a second type of gas into the plasma reaction unit, wherein the second type of gas at least comprises a second type of reaction gas for the plasma reaction unit to generate the plasma effluent;
a second cleaning control unit for controlling the plasma effluents to react with the carbon-containing contaminants on the surface of the semiconductor substrate at a fourth temperature; and removing a second byproduct gas generated in the clean reaction chamber by the reaction of the plasma effluent and the carbon-containing pollutants at the fourth temperature.
In the first aspect of the present invention, while removing oxygen-containing contaminants based on a clean reaction chamber, carbon-containing contaminants can be removed based on the same clean reaction chamber, that is: the removal of oxygen-containing pollutants and carbon-containing pollutants is realized based on the same clean reaction cavity, the oxygen-containing pollutants and the carbon-containing pollutants are not required to be removed through 2 clean reaction cavities, the operation that the semiconductor substrate is transferred from one clean reaction cavity to a second clean reaction cavity to remove the carbon-containing pollutants after the oxygen-containing pollutants are removed is avoided, the excessive modification of clean equipment is not required, the pollutant removal process can be simplified, the pollutant removal cost is reduced, and the situation that the exposed silicon-containing substrate is exposed in the surrounding environment again due to the fact that the oxygen-containing pollutants are removed firstly and then the oxygen-containing pollutants are generated in situ can be reduced. In addition, the removal of oxygen-containing contaminants and carbon-containing contaminants from the surface of the semiconductor substrate can reduce the contact resistance of the subsequently formed semiconductor device.
In addition, in most cases, among the contaminants on the surface of the semiconductor substrate, oxygen-containing contaminants are mainly generated in situ from the underlying material, carbon-containing contaminants are generated from chemical residues in the semiconductor substrate processing, and new carbon-containing contaminants may also appear during the process of removing the oxygen-containing contaminants, namely: carbon-containing contaminants tend to be at the interface of the semiconductor substrate underlayer and oxygen-containing contaminants. Based on this, when removing the oxygen-containing pollutant and the carbon-containing pollutant, the priority is given to removing the oxygen-containing pollutant and then removing the carbon-containing pollutant, which is beneficial to improving the pollutant removal effect.
As an optional implementation manner, in the first aspect of the present invention, the plasma delivery control unit is specifically configured to: delivering a plasma effluent into the clean reaction chamber upon initial sublimation of the solid by-product; alternatively, the plasma effluent is delivered into the clean reaction chamber during sublimation of the solid by-product.
In the first aspect of the present invention, the plasma effluent is transported into the clean reaction chamber to remove the carbon-containing contaminants during the initial sublimation of the solid by-product or during the sublimation of the solid by-product, so that the carbon-containing contaminants are removed while the solid by-product is sublimated, the total time required for removing the oxygen-containing contaminants and the carbon-containing contaminants based on one clean reaction chamber is shortened, and the contaminant removal efficiency can be improved to a certain extent. Furthermore, the early introduction of plasma effluents (i.e., the early introduction of hydrogen-containing plasma effluents) also allows for savings in the energy required for the reaction. In practice, the plasma effluent may also be introduced after the solid by-product has been removed, for the purpose of removing as much of the contaminants as possible.
As an alternative embodiment, in the first aspect of the present invention, the first type of reactive gas includes a fluorine-containing gas and a hydrogen-containing gas;
the proportion of the fluorine-containing gas to the hydrogen-containing gas is 1 to 20 to 1, and when the proportion is too high, silicon etching is easily caused and silicon loss is further caused, and when the proportion is too low, oxygen-containing pollutants are removed too slowly and even cannot be removed; and/or the presence of a gas in the gas,
the fluorine-containing gas comprises at least one of NF3 and HF, the hydrogen-containing gas comprises at least one of NH3, H2 and water vapor, and/or the intermediate is NH4F.
Further, when the fluorine-containing gas is NF3 and the hydrogen-containing gas is NH3, the reaction formula for forming the intermediate may be: NH3 (g) + NF3 (g) → NH4F (g), and the reaction conditions are heat.
Further, the fluorine-containing gas may also include at least one of CF4, F2, SF6, fluorine-substituted hydrocarbon gas, and/or the hydrogen-containing gas may also include at least one of HF, HCL, hydrocarbon gas.
As an optional embodiment, in the first aspect of the present invention, the first type of gas further comprises a first carrier gas;
and the first carrier gas comprises at least one of hydrogen, nitrogen, argon, xenon and helium.
In the first aspect of the present invention, when the fluorine-containing gas and the hydrogen-containing gas are introduced into the clean reaction chamber, a carrier gas (i.e., the first carrier gas) may be introduced together, and the introduced carrier gas is preferably hydrogen, helium, or nitrogen. The letting in of carrier gas can be under the condition that does not influence the formation midbody, be favorable to increasing the gas density in the clean reaction chamber on the one hand, improve gaseous collision probability, and then realize reactant gas's flash mixed, also can accelerate thermal transmission on the one hand (also receive the heat of fluid distribution unit and transmit to reactant gas promptly), so that provide required reaction temperature for reactant gas's reaction, be favorable to improving reaction temperature regulation and control speed, in addition, carrier gas's the concentration that can also control reactant gas that lets in, further improve reactant gas's reaction controllability.
It should be noted that the ratio of the introduced carrier gas cannot be too high or too low, and the ratio of the introduced carrier gas is too high, which is equivalent to reducing the concentration of the reaction gas and affecting the reaction efficiency, and the ratio of the introduced carrier gas is too low, which cannot accelerate the mixing of the reaction gas and the heat transfer. Wherein, the flowing proportion of the carrier gas which is simultaneously flowed in when the fluorine-containing gas and the hydrogen-containing gas are flowed in is preferably 5 to 20 percent.
As an optional implementation manner, in the first aspect of the present invention, the gas delivery control unit is further configured to continuously introduce the first carrier gas into the clean reaction chamber during the process of removing the oxygen-containing contaminants on the surface of the semiconductor substrate through the intermediate body.
In the first aspect of the invention, the first carrier gas is continuously introduced in the reaction process of the intermediate and the oxygen-containing pollutants, which is beneficial to full contact between the intermediate and the oxygen-containing pollutants and acceleration of heat transfer so as to provide a reaction temperature required by the reaction of the intermediate and the oxygen-containing pollutants, and is beneficial to improvement of the reaction efficiency of the intermediate and the oxygen-containing pollutants, and further beneficial to improvement of the removal efficiency of the oxygen-containing pollutants.
As an alternative implementation manner, in the first aspect of the present invention, a specific manner of delivering the first type of gas to the clean reaction chamber by the gas delivery control unit includes:
for each kind of the first kind of reaction gas, the first kind of reaction gas and the first carrier gas are respectively mixed and conveyed to the clean reaction chamber, and the mixed gas of the first carrier gas and the different kinds of reaction gases is introduced through different gas conveying pipelines, so that the concentration of the reaction gases is reduced, the process stability and the reproducibility are further increased, the generation of an intermediate is facilitated, and a better SiO2 or SiN selectivity can be achieved, for example: the mixed gas of the fluorine-containing gas and the first carrier gas can be introduced from the upper part of the clean reaction cavity, and the mixed gas of the hydrogen-containing gas and the first carrier gas can be introduced from the side wall of the clean reaction cavity and above the fluid distribution unit, so that the reaction gases can be fully mixed; or,
and mixing the first carrier gas with all the first type of reaction gas and conveying the mixture to the clean reaction chamber.
In the first aspect of the present invention, the first carrier gas may be mixed with each of the reaction gases and then introduced into the clean reaction chamber through different gas delivery pipelines, or the first carrier gas may be mixed with all of the reaction gases and then introduced into the clean reaction chamber, so that various carrier gas introduction methods are provided, and flexibility of introduction of the reaction gases and the carrier gas is improved.
As an optional embodiment, in the first aspect of the present invention, the first temperature is 140 ℃ to 180 ℃, and if the reaction temperature is too low, the intermediate generation rate is too slow or even cannot be generated, which may cause a situation that the reaction gas is directly pumped away without reaction; if the reaction temperature is too high, the intermediate generation rate is too high, and the control of subsequent reactions is not facilitated, so that a proper reaction temperature can be provided for the generation of the intermediate, and the generation of the intermediate is facilitated; and/or the presence of a gas in the atmosphere,
the second temperature is 10-65 ℃, for example, the second temperature can be 15 ℃, 20 ℃ or 30 ℃, if the temperature of the substrate carrier seat unit is too high, a byproduct is difficult to form, the molecular motion of the intermediate is violent, the adsorption probability of the intermediate on the surface of the semiconductor substrate is further reduced, if the temperature of the substrate carrier seat unit is too low, the generation rate of the byproduct is slow, and even the byproduct is difficult to generate, so that a proper reaction temperature can be provided for the reaction of the intermediate and the oxygen-containing pollutant after the intermediate is generated, the generation of the byproduct is facilitated, and the removal effect of the oxygen-containing pollutant is further improved; and/or the presence of a gas in the gas,
the absolute value of the temperature difference between the first temperature and the second temperature is 80-150 ℃, so that the temperature difference control of the fluid distribution unit and the substrate carrier seat unit is realized, if the absolute value of the temperature difference is too high, a hot fluid formed by a generated intermediate body is easily attached to the surface of the semiconductor substrate, the surface temperature of the semiconductor substrate is quickly increased, the control difficulty of the surface temperature of the semiconductor substrate is increased, and the generation of solid byproducts is not facilitated; if the absolute value of the temperature difference is too high, then there may be a phenomenon where the temperature of the semiconductor substrate is too high or the temperature of the fluid distribution unit is too low, which is detrimental to the overall removal process of the oxygen-containing contaminants.
As an optional implementation manner, in the first aspect of the present invention, an absolute value of a difference between any two of the first temperature, the third temperature, and the fourth temperature is less than or equal to 5 ℃, so that the corresponding temperatures are set to be substantially the same, and a temperature difference does not exceed 5 ℃, which is beneficial to simplifying temperature control operation, shortening temperature regulation and control time, and increasing temperature regulation and control rate; and/or the third temperature is 140-200 ℃, such as 180 ℃, which is beneficial to realizing sublimation of the solid by-product.
As an alternative embodiment, in the first aspect of the present invention, the second type of gas further comprises a second carrier gas; and/or the fourth temperature is 70-150 ℃.
In the first aspect of the invention, the removal of oxygen-containing pollutants and carbon-containing pollutants is realized based on the same clean reaction chamber, and when the carbon-containing pollutants are removed, besides the reaction gas for generating plasma effluents, a second current-carrying gas can be introduced, so that the mixing of the reaction gas can be accelerated, the temperature required by the reaction can be transferred to the reaction gas, the concentration of the reaction gas can be controlled, and the reaction controllability can be improved.
In a second aspect, the present invention discloses a method for controlling the cleaning of a semiconductor substrate, the method comprising a cleaning control method performed by the cleaning control system of any one of the first aspect of the present invention.
A third aspect of the present invention discloses a cleaning apparatus, which includes a cleaning reaction chamber in which a semiconductor substrate is placed when the semiconductor substrate needs to be cleaned;
wherein the cleaning apparatus further comprises a cleaning control system according to any one of the first aspect of the present disclosure.
Compared with the prior art, the embodiment of the invention has the following beneficial effects:
the method can remove the oxygen-containing pollutants on the surface of the semiconductor substrate in a mode of heating to form the intermediate, improves the controllability in removing the oxygen-containing pollutants, is favorable for improving the removal effect of the oxygen-containing pollutants, has high conformality on the semiconductor substrate in the pollutant removing process, does not introduce plasma in the oxygen-containing pollutant removing process, reduces etching on the bottom layer of the semiconductor substrate, and further reduces the occurrence of the condition that other particle pollutants are introduced due to collision with the inner wall of the clean reaction cavity. In addition, compared with the plasma method in the prior art, the method can also be used for SiO 2 the/SiN aspect has a higher removal selectivity ratio. Moreover, the intermediate and the oxygen-containing pollutant on the surface of the semiconductor substrate can be further controlled to react at a required reaction temperature to form a solid byproduct, and the solid byproduct can be removed by sublimating the solid byproduct, so that the oxygen-containing pollutant can be effectively removed. And moreover, when the reaction gas is introduced, the carrier gas can be introduced together, so that the mixing of the reaction gas can be accelerated, the temperature required by the reaction can be transferred to the reaction gas, the concentration of the reaction gas can be controlled, and the reaction controllability is improved. Further, the process of reacting the intermediate with the oxygen-containing contaminant to produce a solid by-productIn, can further realize the intelligent control to solid by-product particle diameter and distribution through the formation control parameter that the by-product that determines produced the influence factor and correspond to generate the solid by-product that particle size is less and particle size distribution is even, solved because of solid by-product particle distribution inhomogeneous, present the problem that the big slice and then appear shielding effect. Furthermore, the substrate carrier unit is used for carrying the semiconductor substrate, so that the flexibility of controlling the position (such as height) of the semiconductor substrate is favorably realized, the reaction efficiency is favorably improved, the removal efficiency of oxygen-containing pollutants is favorably improved, the uniform distribution of gas can be realized through the fluid distribution unit in the clean reaction cavity, the full combination of the gas is realized, and the efficiency of heating to form an intermediate is favorably improved; the fluid distribution unit in the clean reaction cavity provides the reaction temperature required by the reaction to form the intermediate and/or provides the reaction temperature required by the sublimation of the solid by-product, so that the efficiency of providing the required temperature is improved, and the reaction efficiency is improved. Furthermore, the removal of oxygen-containing pollutants and carbon-containing pollutants can be realized based on the same clean reaction chamber, so that the pollutant removal process can be simplified, the pollutant removal cost can be reduced, and the situation that the oxygen-containing pollutants are removed firstly to cause that the exposed silicon-containing substrate is exposed in the surrounding environment again to cause that the oxygen-containing pollutants are generated again in situ can be reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view of a semiconductor substrate cleaning control system according to an embodiment of the present invention;
FIG. 2 is a schematic view of another embodiment of a semiconductor substrate cleaning control system;
FIG. 3 is a schematic view of another embodiment of a system for controlling the cleaning of a semiconductor substrate;
FIG. 4 is a flowchart illustrating a method for controlling the cleaning of a semiconductor substrate according to an embodiment of the present invention;
FIG. 5 is a flow chart illustrating another method for controlling the cleaning of a semiconductor substrate according to an embodiment of the present invention;
FIG. 6 is a schematic structural view of a cleaning apparatus according to an embodiment of the present invention;
FIG. 7 is a schematic view illustrating a structure of another cleaning apparatus according to an embodiment of the present invention.
500, cleaning equipment; 501. cleaning the reaction chamber; 502. a conveyance control unit; 5021. a first gas delivery control unit; 5022. a second gas delivery control unit; 503. a plasma reaction unit (i.e., RPS); 504. a substrate holder unit; 5041. a stage; 5042. a displacement regulating unit; 505. a fluid dispensing unit; 600. a semiconductor substrate.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms "first," "second," and the like in the description and claims of the present invention and in the above-described drawings are used for distinguishing between different objects and not for describing a particular order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, apparatus, article, or article that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or article.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the invention. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein may be combined with other embodiments.
The invention discloses a cleaning control system and method for a semiconductor substrate and cleaning equipment, which can remove oxygen-containing pollutants on the surface of the semiconductor substrate in a heating and intermediate forming mode, improve the controllability of removing the oxygen-containing pollutants and be beneficial to improving the removal effect of the oxygen-containing pollutants.
Before describing specific embodiments, a semiconductor substrate (also referred to as a cleaning object or an etching object) to be cleaned related to the following embodiments will be described. The semiconductor substrate includes a bottom layer and a surface layer, the bottom layer mainly relates to silicon, germanium, nitride (such as silicon nitride), the surface layer mainly contains various contaminants, and the contaminants of the surface layer mainly relates to two types: oxygen-containing contaminants and carbon-containing contaminants. Wherein, the oxygen-containing contaminant can be silicon oxide, germanium oxide, silicon oxynitride, germanium oxynitride, silicon oxycarbide, germanium oxycarbide, metal oxide, etc., and the carbon-containing contaminant can be hydrocarbon, silicon carbide, etc.
The following describes embodiments of a cleaning control system, a cleaning control method, and a cleaning apparatus for cleaning a semiconductor substrate in detail.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of a cleaning control system for a semiconductor substrate according to an embodiment of the present invention. The cleaning control system shown in fig. 1 is used to implement cleaning control of a semiconductor substrate to be cleaned, which is placed in a clean reaction chamber, that is: when the semiconductor substrate needs to be cleaned, the semiconductor substrate is placed in the cleaning reaction chamber, and the cleaning control system performs cleaning control on the semiconductor substrate placed in the cleaning reaction chamber, where the cleaning reaction chamber may be a cleaning device or a part of the cleaning device, and further, the cleaning control system may be integrated in the cleaning device as a part of the cleaning device, such as a control center of the cleaning device, or may not be integrated in the cleaning device and exist independently of the cleaning device, which is not limited in the embodiments of the present invention. As shown in fig. 1, the cleaning control system 100 may include:
the gas delivery control unit 101 is used for delivering a first type of gas to the clean reaction chamber, wherein the first type of gas at least comprises a first type of reaction gas participating in forming an intermediate, and the intermediate is used for removing oxygen-containing pollutants on the surface of the semiconductor substrate;
the temperature control unit 102 is configured to heat the first type of reaction gas to a first temperature required for the first type of reaction gas to participate in a reaction to form an intermediate, so that the first type of reaction gas reacts to generate the intermediate;
the first cleaning control unit 103 is used for removing oxygen-containing contaminants on the surface of the semiconductor substrate through an intermediate body.
In an alternative embodiment, the first reactive gas may include a fluorine-containing gas and a hydrogen-containing gas. Optionally, the ratio of the fluorine-containing gas to the hydrogen-containing gas is 1. Further, the fluorine-containing gas may be NF3 or HF; the hydrogen-containing gas may be NH3, H2, or water vapor.
For example, when the fluorine-containing gas is NF3 and the hydrogen-containing gas is NH3, the reaction formula for forming the intermediate may be: NH3 (g) + NF3 (g) → NH4F (g), and the reaction conditions are heating, and the heating temperature is the above-described first temperature.
In this optional embodiment, optionally, the first type of gas may further include a first carrier gas in addition to the first type of reactive gas, and the first carrier gas may include at least one of hydrogen, nitrogen, argon, xenon, and helium, so that no additional substance is generated while the stability of the carrier gas is ensured. Wherein the carrier gas functions to transfer heat of the heat source to the reaction gas by diffusion and to increase movement or collision of fluid in the reaction chamber. Therefore, if the temperature control efficiency is further improved based on the gas heat transfer coefficient, the first carrier gas is preferably hydrogen, and helium can be considered secondly; the gas diffusion process has two modes of self-diffusion and mutual diffusion, the self-diffusion refers to the self-diffusion difference of the same gas caused by different densities, the mutual diffusion refers to the diffusion between different gases, the molecular mass of hydrogen and helium is low, the diffusion is easier, and the first carrier gas is preferably hydrogen or helium in view of diffusion. Therefore, in general, the first carrier gas is preferably hydrogen, helium, or nitrogen, and most preferably hydrogen. In addition, since hydrogen can also be used as the reaction gas in the subsequent process of removing the carbon-containing pollutants, the first carrier gas is preferably hydrogen, and a gas source pipeline arranged around the clean reaction chamber in the pollutant removing process can be further reduced.
In this optional embodiment, optionally, the gas delivery control unit 101 may be further configured to continuously introduce the first carrier gas into the clean reaction chamber during the process of removing the oxygen-containing contaminants on the surface of the semiconductor substrate through the intermediate. Therefore, in the reaction process of the intermediate and the oxygen-containing pollutant, the first carrier gas is continuously introduced, and is used as a carrier for bearing the intermediate, so that the intermediate is adsorbed on the surface layer of the semiconductor substrate, the intermediate is favorably in full contact with the oxygen-containing pollutant, the heat transfer is accelerated, the reaction temperature required by the reaction of the intermediate and the oxygen-containing pollutant is further provided, the reaction efficiency of the intermediate and the oxygen-containing pollutant is favorably improved, and the removal efficiency of the oxygen-containing pollutant is further favorably improved.
In this optional embodiment, optionally, the specific manner for the gas delivery control unit 101 to deliver the first type of gas to the clean reaction chamber may include:
for each first type of reaction gas, respectively mixing the first type of reaction gas with a first carrier gas and conveying the mixture to a clean reaction cavity; or,
the first carrier gas and all the first type of reaction gas are mixed and conveyed to the clean reaction chamber.
Therefore, in the optional embodiment, the first carrier gas can be respectively mixed with each reaction gas and then respectively introduced into the clean reaction chamber through different gas conveying pipelines, or the first carrier gas can be mixed with all the reaction gases and then introduced into the clean reaction chamber, so that diversified carrier gas introduction modes are provided, and the introduction flexibility of the reaction gases and the carrier gas is improved. In addition, the mixed gas of the first carrier gas and the different types of reaction gases is introduced through different gas conveying pipelines, so that the concentration of the reaction gases is reduced, the stability and the reproducibility of the process are improved, the generation of an intermediate is facilitated, and a better SiO2/SiN selection ratio can be achieved.
In an alternative embodiment, as shown in FIG. 2, the first cleaning control unit 103 may further include:
a first cleaning control subunit 1031, configured to control the intermediate to react with the oxygen-containing contaminants on the surface of the semiconductor substrate at a second temperature to generate a solid byproduct;
a second cleaning control subunit 1032 for heating the solid byproduct to sublimate the solid byproduct at a third temperature;
and a third cleaning control subunit 1033 for removing a first byproduct gas formed after sublimation of the solid byproduct.
In this alternative embodiment, a fluid distribution unit (e.g., a fluid distribution plate) and/or a substrate holder unit for holding a semiconductor substrate placed in the clean chamber may be further disposed in the clean chamber.
In this optional embodiment, optionally, the specific manner for the temperature control unit 102 to heat the first type of reactant gas to the first temperature required for the first type of reactant gas to participate in the reaction to form the intermediate includes:
the temperature regulation and control module corresponding to the control fluid distribution unit provides first temperature required for heating the first type of reaction gas to participate in the reaction to form an intermediate.
Further optionally, the first temperature is 140 ℃ to 180 ℃, if the reaction temperature is too low, the intermediate generation rate is too slow or even cannot be generated, which may cause the situation that the reaction gas is directly pumped away without reaction; if the reaction temperature is too high, the generation rate of the intermediate is too high, which is not beneficial to the control of subsequent reaction, thus providing proper reaction temperature for the generation of the intermediate and being beneficial to the generation of the intermediate.
Therefore, the optional embodiment can provide the first temperature required by the generation of the intermediate through the temperature regulation and control module corresponding to the fluid distribution unit, thereby being beneficial to improving the temperature control efficiency, improving the temperature control flexibility and further being beneficial to improving the generation efficiency and the generation effect of the intermediate.
Further optionally, in the case that a fluid distribution unit is further disposed in the clean reaction chamber and a corresponding temperature regulation module (for example, a heat source body embedded in the temperature regulation module in a fluid distribution plate in the fluid distribution unit) is present in the fluid distribution unit, the reaction region where the intermediate body is formed is limited to an upper partial region of the fluid distribution unit in the clean reaction chamber. Specifically, when the first type of reaction gas reacts to form an intermediate, a region where most of the intermediate is formed (for example, a region where 80% or more of the intermediate is formed) is a reaction region; and the fluid distribution unit is used as a boundary to divide the clean reaction chamber into an upper part area and a lower part area, the upper part area of the clean reaction chamber is arranged above the fluid distribution unit, and when the intermediate is formed, the reaction area is limited in the upper part area of the clean reaction chamber. Since the reaction zone is for reacting with the hydrogen-containing gas to form the intermediate after the fluorine-containing gas is cracked by heating, the reaction zone can be defined by controlling the residence time of the first type of reaction gas above the fluid distribution unit, so that the conversion rate of the generated intermediate can be improved. It should be noted that the fluid distribution unit may be configured as a position-adjustable fluid distribution unit according to the process requirements.
In this optional embodiment, optionally, the specific manner of the first cleaning control subunit 1031 controlling the intermediate to react with the oxygen-containing contaminant on the surface of the semiconductor substrate at the second temperature to generate the solid byproduct includes:
the first cleaning control subunit 1031 controls the substrate holder unit to position the semiconductor substrate at a first horizontal position (for example, controls the substrate holder unit to move the semiconductor substrate to the first horizontal position, which may be referred to as being disposed near the bottom region of the cleaning reaction chamber) and provides a second temperature required for the intermediate to react with the oxygen-containing contaminant on the surface of the semiconductor substrate to generate a solid byproduct through the temperature control module corresponding to the substrate holder unit, wherein when the semiconductor substrate is positioned at the first horizontal position and the temperature control module corresponding to the substrate holder unit provides the second temperature, the intermediate reacts with the oxygen-containing contaminant on the surface of the semiconductor substrate to generate the solid byproduct, for example, the intermediate NH4F reacts with the silica contaminant to form the solid byproduct hexafluorosilicate.
Further optionally, the second temperature is 10 ℃ to 65 ℃, for example, 15 ℃, 20 ℃ or 30 ℃, if the second temperature provided by the substrate carrier unit is too high, a byproduct is difficult to form, the intermediate molecule may move violently, and the adsorption probability of the intermediate on the surface of the semiconductor substrate is reduced, and if the second temperature is too low, the generation rate of the byproduct is slow, and even the byproduct is difficult to generate; the method can provide proper reaction temperature for the reaction of the intermediate and the oxygen-containing pollutants after the intermediate is generated, is favorable for generating byproducts, and is further favorable for improving the removal effect of the oxygen-containing pollutants.
Further optionally, the absolute value of the temperature difference between the first temperature and the second temperature is 80-150 ℃, so that the temperature difference control between the fluid distribution unit and the substrate carrier seat unit is realized, if the absolute value of the temperature difference is too high, a hot fluid formed in the generated intermediate body is easily attached to the surface of the semiconductor substrate, the surface temperature of the semiconductor substrate is quickly increased, the control difficulty of the surface temperature of the semiconductor substrate is increased, and the generation of solid byproducts is not facilitated; if the absolute value of the temperature difference is too low, then there may be a phenomenon where the temperature of the semiconductor substrate is too high or the temperature of the fluid dispensing unit is too low, which is detrimental to the overall removal process of the oxygen-containing contaminants.
Further optionally, when the semiconductor substrate carried by the substrate carrier unit is located at the first horizontal position, the substrate carrier unit is controlled to hold the semiconductor substrate at the first horizontal position for a certain time, so that the intermediate is fully reacted with the oxygen-containing contaminants on the surface of the semiconductor substrate. Wherein, when the intermediate reacts with the oxygen-containing contaminant on the surface of the semiconductor substrate, the following parameters are considered in addition to the second temperature required for the reaction between the intermediate and the oxygen-containing contaminant:
(1) the reaction time of the intermediate and the oxygen-containing contaminant on the surface of the semiconductor substrate, and the time for holding the semiconductor substrate at the first horizontal position by the substrate holder unit is greater than or equal to the reaction time, the reaction time depends on the thickness of the oxygen-containing contaminant to be etched or removed, and the thickness of the oxygen-containing contaminant can be specifically determined according to the processing technology of the semiconductor substrate. For example, the oxygen-containing contaminant to be etched or removed is silicon oxide with a thickness of 50-100nm, and the corresponding reaction time is controlled to 10-30 seconds;
(2) the reaction pressure of the intermediate with the oxygen-containing contaminants on the surface of the semiconductor substrate can be maintained at 10-100torr.
In addition, when the reaction between the intermediate and the oxygen-containing contaminant on the surface of the semiconductor substrate is finished, the first type of reaction gas may be stopped from being introduced into the clean reaction chamber, and the first carrier gas may be continuously introduced based on the original flow rate, which is helpful for subsequently discharging the byproduct gas generated after the sublimation of the solid byproduct.
In this alternative embodiment, optionally, the second cleaning control subunit 1032 heats the solid byproduct, and the specific manner of sublimating the solid byproduct at the third temperature includes:
the substrate holder unit is controlled to support the semiconductor substrate at a second horizontal position (for example, the second horizontal position may refer to a lower region near the fluid distribution unit), and a third temperature required for sublimation of the solid byproduct is provided based on the temperature control module corresponding to the fluid distribution unit in the clean reaction chamber, wherein the solid byproduct undergoes a sublimation reaction at the third temperature.
Further optionally, the third temperature is 140 ℃ to 200 ℃, for example, 180 ℃, which is beneficial to realizing sublimation of the solid by-product.
Further optionally, the substrate holder unit is configured to hold the semiconductor substrate in the second horizontal position for at least one minute to sufficiently sublimate the solid by-products. At this time, the height of the second level is higher than that of the first level.
Further alternatively, the third cleaning control subunit 1033 may discharge by-product gas generated after sublimation of the solid by-product by adjusting the pressure inside the cleaning reaction chamber.
It should be noted that the first cleaning control subunit 1031 realizes the removal of the oxygen-containing contaminants, the second cleaning control subunit 1032 realizes the removal of the solid by-products formed during the removal of the oxygen-containing contaminants, and the third cleaning control subunit 1033 realizes the removal of the by-product gases formed during the removal of the solid by-products, and in the actual contaminant removal control, the formed solid by-products cover the surface of the semiconductor substrate to block the further removal of the oxygen-containing contaminants, so that the removal of the oxygen-containing contaminants, the removal of the solid by-products, and the removal of the by-product gases can be performed repeatedly to remove the oxygen-containing contaminants and the by-products thereof as much as possible.
In an alternative embodiment, the specific manner of the first cleaning control subunit 1031 controlling the intermediate to react with the oxygen-containing contaminant on the surface of the semiconductor substrate at the second temperature to generate the solid byproduct may include:
the first cleaning control subunit 1031 determines a byproduct generation influence factor; the determined byproduct generation influence factors comprise one or more combinations of growth temperature factors, growth pressure factors, gas composition factors and gas flow characteristic factors;
the first cleaning control subunit 1031 generates a generation control parameter corresponding to each byproduct generation influence factor according to a predetermined target distribution requirement and/or a predetermined target particle size requirement;
the first cleaning control subunit 1031 controls the intermediate to react with the oxygen-containing contaminant on the surface of the semiconductor substrate at the second temperature under the control of the generation control parameter to generate a solid by-product.
In this alternative embodiment, the solid byproduct is controlled to form a desired grain morphology as much as possible by adjusting the growth temperature, growth pressure, effective gas composition in the clean reaction chamber, gas flow characteristics, and other factors of the solid byproduct grains. For example, the condition of uneven surface reaction caused by rapid growth of crystal grains is reduced by determining the appropriate growth temperature of the solid by-product; for another example, the intermediate is urged to be adsorbed after colliding with the surface of the semiconductor substrate as much as possible by adjusting the pressure gradient, so that occurrence of rebound after collision or desorption after adsorption is reduced.
Specifically, the corresponding control process or control principle is as follows: in the process of generating the solid by-product, the intermediate is adsorbed on the surface of the semiconductor substrate, and reacts with the oxygen-containing pollutant on the surface layer, and continuously grows on the surface of the semiconductor substrate to deposit solid silicate. When the driving force for growth is higher, such as the deposition rate is high, the formed silicate is easier to stack and tends to be flaky or large-particle-shaped, and when the driving force for growth is proper, the formed silicate tends to be in an equilibrium shape in a medium in an equilibrium environment, and the formed solid byproduct has smaller particle size and uniform particle size distribution.
In this alternative embodiment, controlling the difference between the particle size dimensions D90 and D10 of the solid byproduct particles to be less than 100um may be accomplished by corresponding production control parameters, which may be desired by targeting the difference between D90 and D10 to define a smaller particle size of the solid byproduct particles and to provide a more uniform distribution of the solid byproduct particles. When the intermediate reacts with the oxygen-containing pollutant, if the solid byproduct particles formed are not uniformly distributed, they are liable to be in a large sheet shape, and further, a shielding effect may occur, that is: the large-area solid byproduct particles cover the surface of the semiconductor substrate, so that the difficulty in removing oxygen-containing pollutants on the surface of the semiconductor substrate is increased, and particularly oxygen-containing pollutants inside the surface layer of the semiconductor substrate; in addition, if the distribution of the formed solid byproduct particles is not uniform, the larger the solid byproduct particles are or the particles are not uniformly distributed when the solid byproduct is sublimated, the more difficult the solid byproduct particles are to be separated from the surface layer of the semiconductor substrate, and the residual solid byproduct may further affect the subsequent removal of carbon-containing pollutants, and the embodiment of the invention can solve the problems by limiting the difference parameter between D90 and D10 as the target requirement to limit the particle size of the solid byproduct particles to be smaller and more uniform.
In an alternative embodiment, as shown in FIG. 2, the cleaning control system 100 may further include:
a plasma delivery control unit 104 for delivering plasma effluents into the clean reaction chamber; the Plasma effluents are generated by introducing a second type of gas into a Plasma reaction unit (e.g., remote Plasma System, RPS), the second type of gas including at least a second type of reactant gas, such as hydrogen, for the Plasma reaction unit to generate the Plasma effluents; specifically, the semiconductor substrate carried by the substrate carrier unit can be kept at the second horizontal position, and the temperature of the region to be reacted is adjusted through the temperature regulation and control module corresponding to the fluid distribution unit; the plasma reaction unit is opened and a second type of gas is introduced into the plasma reaction unit to form a plasma effluent containing hydrogen radicals.
A second cleaning control unit 105 for controlling the plasma effluents to react with the carbon-containing contaminants on the surface of the semiconductor substrate at a fourth temperature; removing a second byproduct gas generated by the reaction of the plasma effluent and the carbon-containing pollutants in the clean reaction chamber at a fourth temperature, wherein the fourth temperature is provided by a temperature regulation module of the fluid distribution unit; specifically, the plasma effluents react with the carbon-containing contaminants on the surface of the semiconductor substrate at a high temperature to form gaseous hydrocarbons, and the second cleaning control unit 105 exhausts the byproduct gas inside the cleaning chamber by adjusting the pressure inside the cleaning chamber.
In this optional embodiment, optionally, the fourth temperature is 70 ℃ to 150 ℃, such as 75 ℃, 85 ℃, 100 ℃, or 120 ℃. If the fourth temperature is too high, the situation that the bottom layer material is etched easily occurs in the process of removing the pollutants, and the silicon material loss is caused; if the temperature is too low, the removal effect cannot be realized; therefore, by controlling the appropriate fourth temperature, the removal effect can be achieved while also being beneficial to reduce the etching of the underlayer material during the contaminant removal process.
Further optionally, an absolute value of a difference between any two of the first temperature, the third temperature and the fourth temperature is less than or equal to 5 ℃, so that multi-temperature unified setting can be realized, repeated large-amplitude temperature rise processes are reduced, a temperature control flow is simplified, and temperature control efficiency is improved.
In this optional embodiment, optionally, the second type of gas may further include a second carrier gas, such as argon, which may accelerate mixing of the reaction gases and transfer the temperature required for the reaction to the reaction gases, and may also control the concentration of the reaction gases, thereby improving reaction controllability.
In this alternative embodiment, the process for removing carbonaceous contaminants based on plasma effluents, in addition to the fourth temperature mentioned above, specifically involves the following reaction parameters:
(1) the reaction pressure, such as the pressure in the clean reaction chamber, is controlled to be 10 torr;
(2) the reaction time is 30s-1min.
In this alternative embodiment, optionally, after removing the carbon-containing contaminants and the byproducts thereof, all the gas sources and the plasma reaction unit may be turned off, the semiconductor substrate carried by the substrate holder unit is moved to a low-level position for cooling, and the semiconductor substrate is moved out of the clean reaction chamber after cooling.
It can be seen that this alternative embodiment, while removing the oxygen-containing pollutants based on a clean reaction chamber, can also remove the carbon-containing pollutants based on the same clean reaction chamber, that is: the removal of oxygen-containing pollutants and carbon-containing pollutants is realized based on the same clean reaction cavity, the oxygen-containing pollutants and the carbon-containing pollutants are not required to be removed through 2 clean reaction cavities, the operation that the semiconductor substrate is transferred from one clean reaction cavity to a second clean reaction cavity to remove the carbon-containing pollutants after the oxygen-containing pollutants are removed is avoided, the excessive modification of clean equipment is not required, the pollutant removal process can be simplified, the pollutant removal cost is reduced, and the situation that the exposed silicon-containing substrate is exposed in the surrounding environment again due to the fact that the oxygen-containing pollutants are removed firstly and then the oxygen-containing pollutants are generated in situ can be reduced. In addition, removing oxygen-containing contaminants and carbon-containing contaminants from the surface of the semiconductor substrate can reduce the contact resistance of subsequently formed semiconductor devices.
In an alternative embodiment, the operation of removing the oxygen-containing pollutants is performed by the first cleaning control unit and other units, and then the operation of removing the carbon-containing pollutants is performed by the second cleaning control unit and other units in the same cleaning reaction chamber.
In most cases, among the contaminants on the surface of the semiconductor substrate, oxygen-containing contaminants mainly come from in-situ generation of the underlying material, carbon-containing contaminants come from chemical residues in the semiconductor substrate processing, and new carbon-containing contaminants may also appear during the process of removing the oxygen-containing contaminants, that is: carbon-containing contaminants tend to be at the interface of the semiconductor substrate underlayer and oxygen-containing contaminants. Based on this, when removing the oxygen-containing pollutant and the carbon-containing pollutant, the priority is given to removing the oxygen-containing pollutant and then removing the carbon-containing pollutant, which is beneficial to improving the pollutant removal effect.
In this optional embodiment, optionally, the plasma delivery control unit 104 is specifically configured to: transporting the plasma effluent into a clean reaction chamber upon initial sublimation of the solid by-product; alternatively, the plasma effluent is delivered to a clean reaction chamber during sublimation of the solid by-product. Therefore, when the solid by-product is sublimated initially or in the sublimation process of the solid by-product, the plasma effluents are conveyed into the clean reaction cavity to remove the carbon-containing pollutants, so that the carbon-containing pollutants are removed while the solid by-product is sublimated, the total time for removing the oxygen-containing pollutants and the carbon-containing pollutants based on one clean reaction cavity is shortened, and the pollutant removal efficiency can be improved to a certain extent. Furthermore, the early introduction of plasma effluents (i.e., the early introduction of hydrogen-containing plasma effluents) also allows for savings in the energy required for the reaction.
Example two
Referring to fig. 3, fig. 3 is a schematic structural diagram of another cleaning control system for a semiconductor substrate according to an embodiment of the present invention. The cleaning control system shown in fig. 3 is used to implement cleaning control of a semiconductor substrate to be cleaned placed in a clean reaction chamber, that is: when the semiconductor substrate needs to be cleaned, the semiconductor substrate is placed in the clean reaction chamber, and the cleaning control system performs cleaning control on the semiconductor substrate placed in the clean reaction chamber, wherein the clean reaction chamber may be a cleaning device or a part of the cleaning device, and further, the cleaning control system may be integrated in the cleaning device as a part of the cleaning device, such as a control center of the cleaning device, or may not be integrated in the cleaning device and exist independently of the cleaning device, which is not limited in the embodiments of the present invention. As shown in fig. 3, the cleanliness control system may include:
a memory 201 storing executable program code;
a processor 202 coupled to the memory 201;
the processor 202 calls executable program codes stored in the memory 201 for implementing the cleaning control function of any of the cleaning control systems 100 described in the first embodiment.
EXAMPLE III
Referring to fig. 4, fig. 4 is a flowchart illustrating a method for controlling the cleaning of a semiconductor substrate according to an embodiment of the present invention. The method shown in fig. 4 may be applied to a cleaning control system, which is used to implement cleaning control of a semiconductor substrate to be cleaned placed in a clean reaction chamber, that is: when the semiconductor substrate needs to be cleaned, the semiconductor substrate is placed in the cleaning reaction chamber, and the cleaning control system performs cleaning control on the semiconductor substrate placed in the cleaning reaction chamber, where the cleaning reaction chamber may be a cleaning device or a part of the cleaning device, and further, the cleaning control system may be integrated in the cleaning device as a part of the cleaning device, such as a control center of the cleaning device, or may not be integrated in the cleaning device and exist independently of the cleaning device, which is not limited in the embodiments of the present invention. As shown in fig. 4, the cleaning control method may include the steps of:
301. and delivering a first type of gas to the clean reaction chamber, wherein the first type of gas at least comprises a first type of reaction gas participating in forming an intermediate body, and the intermediate body is used for removing oxygen-containing pollutants on the surface of the semiconductor substrate.
As an alternative embodiment, the delivering the first type of gas to the clean reaction chamber may include:
for each first type of reaction gas, respectively mixing the first type of reaction gas with a first carrier gas and conveying the mixture to a clean reaction cavity; or,
and mixing the first carrier gas with all the first type of reaction gas and conveying the mixture to the clean reaction cavity.
302. The first type of reactant gas is heated to a first temperature necessary for the first type of reactant gas to participate in the reaction to form the intermediate, such that the first type of reactant gas reacts to form the intermediate.
As an optional implementation manner, a first temperature required for the reaction is provided by a temperature regulation and control module corresponding to a fluid distribution unit arranged in the clean reaction chamber, and the first temperature is 140 ℃ to 180 ℃.
In an alternative embodiment, the first reactive gas may include a fluorine-containing gas and a hydrogen-containing gas. Wherein the fluorine-containing gas comprises at least one of NF3, HF, CF4, F2, SF6 and fluorine-substituted hydrocarbon gas, and the hydrogen-containing gas comprises at least one of NH3, H2, water vapor, HF, HCL and hydrocarbon gas. Further, the fluorine-containing gas is at least one selected from NF3 and HF, and the hydrogen-containing gas is at least one selected from NH3, H2 and water vapor.
As an alternative embodiment, the ratio of fluorine-containing gas to hydrogen-containing gas is 1; and/or the intermediate formed is NH4F.
For example, when the fluorine-containing gas is NF3 and the hydrogen-containing gas is NH3, the reaction formula for forming the intermediate may be: NH3 (g) + NF3 (g) → NH4F (g), and the reaction conditions are heating, and the heating temperature is the above-described first temperature.
As an optional implementation manner, the first type of gas may further include a first carrier gas in addition to the first type of reactive gas, and the first carrier gas may include at least one of hydrogen, nitrogen, argon, xenon, and helium, so that no additional substance is generated while the stability of the carrier gas is ensured.
303. Removing oxygen-containing contaminants from the surface of the semiconductor substrate through the intermediate.
In an alternative embodiment, the removing the oxygen-containing contaminants from the surface of the semiconductor substrate through the intermediate body may include the following sub-steps:
in the first substep, the intermediate and oxygen-containing pollutants on the surface of the semiconductor substrate react at a second temperature to generate a solid byproduct, optionally, the second temperature is 10-65 ℃, and/or the absolute value of the temperature difference between the first temperature and the second temperature is 80-150 ℃;
the substrate carrying seat unit is used for carrying the semiconductor substrate so as to enable the semiconductor substrate to be positioned at a first horizontal position, wherein the first horizontal position can be referred to be arranged in a bottom area close to the clean reaction cavity; and a second temperature required for the intermediate to react with the oxygen-containing contaminant on the surface of the semiconductor substrate to generate a solid byproduct is provided by the temperature regulation module corresponding to the substrate pedestal unit.
Heating the solid by-product to sublimate the solid by-product at a third temperature, wherein the absolute value of the difference between the third temperature and the first temperature is less than or equal to 5 ℃;
the substrate carrier unit is used for carrying the semiconductor substrate so as to enable the semiconductor substrate to be located at a second horizontal position, wherein the second horizontal position can be arranged close to the lower area of the fluid distribution unit in a reference mode; and providing a third temperature required for the solid byproduct to carry out sublimation reaction based on the corresponding temperature regulation and control module of the fluid distribution unit. Further, the height of the second level is higher than the height of the first level.
And thirdly, removing the first byproduct gas formed after the solid byproduct is sublimated.
It should be noted that substeps one to three may be performed repeatedly to improve the removal effect of the oxygen-containing contaminants.
It can be seen that this alternative embodiment can further control the reaction of the intermediate body with the oxygen-containing contaminant on the surface of the semiconductor substrate to form a solid byproduct at a desired reaction temperature, and achieve the removal of the solid byproduct by sublimating the solid byproduct, thereby achieving the effective removal of the oxygen-containing contaminant.
In another optional embodiment, the method may further comprise the steps of:
and continuously introducing the first carrier gas into the clean reaction cavity in the process of removing the oxygen-containing pollutants on the surface of the semiconductor substrate through the intermediate.
Therefore, in the optional embodiment, the first carrier gas can be continuously introduced in the reaction process of the intermediate and the oxygen-containing pollutant, and the first carrier gas is used as a carrier for bearing the intermediate, so that the intermediate is adsorbed on the surface layer of the semiconductor substrate, the sufficient contact between the intermediate and the oxygen-containing pollutant is facilitated, the heat transfer is accelerated, the reaction temperature required by the reaction of the intermediate and the oxygen-containing pollutant is provided, the reaction efficiency of the intermediate and the oxygen-containing pollutant is facilitated, and the removal efficiency of the oxygen-containing pollutant is facilitated.
In another optional embodiment, the first sub-step may specifically include:
determining a byproduct generation influence factor; wherein, the determined by-product generation influence factors comprise one or more of growth temperature factors, growth pressure factors, gas composition factors and gas flow characteristic factors;
generating a generation control parameter corresponding to each byproduct generation influence factor according to a predetermined target distribution requirement and/or a predetermined target particle size requirement;
and controlling the intermediate to react with the oxygen-containing pollutant on the surface of the semiconductor substrate at the second temperature under the control of the generation control parameter to generate a solid byproduct.
It can be seen that, this alternative embodiment can also control the desired grain morphology of the solid byproduct as much as possible by adjusting the growth temperature of the solid byproduct grains, the growth pressure, the effective gas composition in the clean reaction chamber, the flow characteristics of the gas, and other factors, so as to limit the particle size of the solid byproduct particles to be smaller, and further make the distribution of the solid byproduct particles more uniform.
In summary, the method described in the embodiments of the present invention can remove the oxygen-containing contaminant on the surface of the semiconductor substrate by heating to form the intermediate, so as to improve the controllability of removing the oxygen-containing contaminant, and is beneficial to improving the removal effect of the oxygen-containing contaminant. In addition, compared with the plasma method in the prior art, the method can also be used for SiO 2 the/SiN aspect has a high removal selection ratio.
It should be noted that, for other related technical contents related to the embodiments of the present invention, reference is made to detailed description of related technical contents in the first embodiment, and details of the embodiments of the present invention are not repeated.
Example four
Referring to fig. 5, fig. 5 is a schematic flow chart illustrating another method for controlling the cleaning of a semiconductor substrate according to an embodiment of the invention. The method shown in fig. 5 may be applied to a cleaning control system, and the cleaning control method may include the following steps:
401. and delivering a first type of gas to the clean reaction chamber, wherein the first type of gas at least comprises a first type of reaction gas participating in forming an intermediate body, and the intermediate body is used for removing oxygen-containing pollutants on the surface of the semiconductor substrate.
402. The first type of reactant gas is heated to a first temperature necessary for the first type of reactant gas to participate in the reaction to form the intermediate, such that the first type of reactant gas reacts to form the intermediate.
Optionally, the first temperature is 140 ℃ to 180 ℃.
403. Removing oxygen-containing contaminants from the surface of the semiconductor substrate through the intermediate.
404. The plasma effluent is delivered into a clean reaction chamber.
The plasma effluent is generated by introducing a second type of gas into the plasma reaction unit, and the second type of gas at least comprises a second type of reaction gas for the plasma reaction unit to generate the plasma effluent. Optionally, the second type of gas may also include a second carrier gas.
As an alternative embodiment, the above-mentioned delivering the plasma effluents into the clean reaction chamber may comprise:
transporting the plasma effluent into a clean reaction chamber upon initial sublimation of the solid by-product; or,
during sublimation of the solid by-product, the plasma effluent is conveyed into a clean reaction chamber.
Therefore, the optional implementation mode conveys the plasma effluents into the clean reaction cavity to remove the carbon-containing pollutants when the solid byproducts are sublimated initially or in the sublimation process of the solid byproducts, so that the carbon-containing pollutants are removed while the solid byproducts are sublimated, the total time required for removing the oxygen-containing pollutants and the carbon-containing pollutants based on one clean reaction cavity is shortened, and the pollutant removal efficiency can be improved to a certain extent. Furthermore, the early introduction of plasma effluents (i.e., the early introduction of hydrogen-containing plasma effluents) also allows for savings in the energy required for the reaction. In practice, the plasma effluent may also be introduced after the solid by-product has been removed, for the purpose of removing as much of the contaminants as possible.
405. The plasma effluents react with carbon-containing contaminants on the surface of the semiconductor substrate at a fourth temperature.
Specifically, the semiconductor substrate is carried by the substrate carrier unit to be located at a second horizontal position, wherein the second horizontal position can be referred to a lower region close to the fluid distribution unit, and a fourth temperature required by the reaction is provided based on the temperature regulation module corresponding to the fluid distribution unit.
Optionally, the absolute difference value between any two of the first temperature, the third temperature and the fourth temperature is less than or equal to 5 ℃, and/or the fourth temperature is 70-150 ℃.
406. And removing a second byproduct gas generated by the reaction of the plasma effluent and the carbon-containing pollutants in the clean reaction chamber at a fourth temperature.
In the embodiment of the present invention, please refer to the related detailed description of the third embodiment for steps 301 to 303 and the first embodiment for other detailed descriptions of steps 401 to 403, and no repeated description is given in the embodiment of the present invention.
Therefore, the method described in the embodiment of the invention can remove the oxygen-containing pollutants on the surface of the semiconductor substrate in a mode of heating to form the intermediate, so that the controllability of removing the oxygen-containing pollutants is improved, the removal effect of the oxygen-containing pollutants is improved, the pollutant removal process has high conformality to the semiconductor substrate, plasma is not introduced in the removal process of the oxygen-containing pollutants, the etching to the bottom layer of the semiconductor substrate is reduced, and the condition that other particle pollutants are introduced due to collision with the inner wall of the clean reaction cavity is further reduced. In addition, compared with the plasma method in the prior art, the method can also be used for SiO 2 the/SiN aspect has a high removal selection ratio.
Moreover, when removing the oxygen-containing pollutant based on the clean reaction chamber, can also remove the carbon-containing pollutant based on same clean reaction chamber, also promptly: the removal of oxygen-containing pollutants and carbon-containing pollutants is realized based on the same clean reaction cavity, the oxygen-containing pollutants and the carbon-containing pollutants are not required to be removed respectively through 2 clean reaction cavities, the operation that the semiconductor substrate is transferred from one clean reaction cavity to a second clean reaction cavity to remove the carbon-containing pollutants after the oxygen-containing pollutants are removed is avoided, too much clean equipment is not required to be modified, the pollutant removal process can be simplified, the pollutant removal cost is reduced, and the situation that the exposed silicon-containing substrate is exposed in the surrounding environment again due to the fact that the oxygen-containing pollutants are removed firstly and then the oxygen-containing pollutants are generated in situ can be reduced.
EXAMPLE five
Referring to fig. 6, fig. 6 is a schematic structural view of a cleaning apparatus according to an embodiment of the present invention. The cleaning apparatus 500 can provide a cleaning reaction chamber 501 for a semiconductor substrate to be cleaned, so as to remove contaminants on the surface of the semiconductor substrate 600 and further clean the semiconductor substrate 600. As shown in fig. 6, the cleaning apparatus 500 may include:
a clean reaction chamber 501 for accommodating a semiconductor substrate 600 to be cleaned;
for coupling to an interface of the transport control unit 502.
In an alternative embodiment, the cleaning apparatus 500 may further include the above-described transport control unit 502, i.e., the transport control unit 502 may be a part of the cleaning apparatus 500. Among other things, the delivery control unit 502 may include a first gas delivery control unit 5021.
In this alternative embodiment, the first gas delivery control unit 5021 is used to deliver a first type of gas into the clean reaction chamber 501, where the first type of gas includes at least a first type of reactant gas that participates in the formation of intermediates. The first type of reaction gas delivered into the clean reaction chamber 501 reacts at a first temperature to form an intermediate, the formed intermediate reacts with the oxygen-containing contaminant on the surface of the semiconductor substrate 600 at a second temperature to form a solid byproduct, and the solid byproduct sublimates at a third temperature to form a first byproduct gas which can be exhausted out of the clean reaction chamber 501.
In this alternative embodiment, further optionally, the first gas delivery control unit 5021 may comprise a delivery conduit coupled to the interface and a gas source of the first type of gas.
In this optional embodiment, further optionally, if multiple types of reaction gases included in the first type of gas need to be respectively delivered into the clean reaction chamber 501, the first gas delivery control unit 5021 may specifically include a gas delivery control subunit for delivering each type of reaction gas, that is: the first gas delivery control unit 5021 may include a gas source for each type of reactant gas and a delivery conduit coupled to the interface for delivering the different types of reactant gases.
In another alternative embodiment, as shown in fig. 6, the above-mentioned delivery control unit 502 may further include a second gas delivery control unit 5022, wherein the second gas delivery control unit 5022 is used for delivering a second type of gas to the plasma reaction unit 503 (such as RPS in fig. 6), and the second type of gas at least includes a second type of reaction gas for the plasma reaction unit 503 to generate plasma effluents.
In this optional embodiment, further optionally, the cleaning apparatus 500 may further include the plasma reaction unit 503, and the plasma reaction unit 503 is configured to generate and deliver the plasma effluent into the clean reaction chamber 501, and the plasma effluent delivered into the clean reaction chamber 501 reacts with the carbon-containing contaminant on the surface of the semiconductor substrate 600 at a fourth temperature to generate a second byproduct gas that can be exhausted out of the clean reaction chamber 501.
Namely: by means of the first gas delivery control unit 5021 and the second gas delivery control unit 5022, the cleaning apparatus 500 can remove oxygen-containing contaminants and carbon-containing contaminants from the surface of the semiconductor substrate 600 in the same clean chamber 501.
In this alternative embodiment, further optionally, if a plurality of types of reactant gases included in the second type of gas need to be respectively delivered into the clean reaction chamber 501, the second gas delivery control unit 5022 may specifically include a gas delivery control subunit for delivering each type of reactant gas.
In yet another alternative embodiment, as shown in fig. 6, the cleaning apparatus 500 may further include a substrate holder unit 504 disposed in the cleaning reaction chamber 501. The substrate holder unit 504 is used for holding a semiconductor substrate 600 to be cleaned, which is placed in the clean reaction chamber 501.
In this alternative embodiment, further optionally, the substrate holder unit 504 may include a stage 5041 for carrying the semiconductor substrate 600, a displacement regulating unit 5042, and a temperature regulating module (not shown in fig. 6). The displacement regulating unit 5042 is used for controlling the stage 5041 carrying the semiconductor substrate 600 to move to a desired position or a desired height; the substrate carrier unit 504 includes a temperature regulation module for providing heat to the semiconductor substrate 600 and the fluid in the vicinity of the semiconductor substrate 600, such as: providing the temperature required for the reaction of the intermediate with the oxygen-containing contaminants on the surface of the semiconductor substrate 600.
Specifically, the substrate holder unit 504 may be an electrostatic chuck (ESC), and the temperature control module included in the substrate holder unit 504 may be a heater embedded in the stage 5041.
In yet another alternative embodiment, as shown in FIG. 6, the cleaning apparatus 500 may further include a fluid distribution unit 505 disposed in the clean reaction chamber 501. The fluid distribution unit 505 may include a fluid distribution plate (showerhead) having a plurality of inner holes, which is used to achieve uniform distribution of fluid (e.g., reactant gas, plasma effluent, etc.) flowing through the fluid distribution unit 505. Further, a temperature regulation module (not shown in fig. 6) is disposed on the fluid distribution unit 505, and the temperature regulation module on the fluid distribution unit 505 is used to regulate the temperature of the area near the fluid distribution unit 505, and further regulate the temperature of the fluid flowing through the fluid distribution unit 505, so that the temperature of the fluid flowing through the fluid distribution unit 505 reaches the temperature required for participating in the reaction.
In any of the above embodiments, further optionally, when the reaction gases are conveyed into the clean reaction chamber 501, the corresponding carrier gases may be conveyed simultaneously, and the corresponding carrier gases are conveyed to the clean reaction chamber 501 after being mixed with all the corresponding reaction gases, or the corresponding carrier gases are conveyed to the clean reaction chamber 501 after being mixed with the corresponding reaction gases in all the reaction gases participating in the reaction.
It should be noted that, for a specific process of removing oxygen-containing contaminants and carbon-containing contaminants, functions and functions of components (such as units, modules, etc.) included in the cleaning apparatus 500, and mutual cooperation between the cleaning apparatus 500 and the cleaning control system, please refer to the detailed description of the first embodiment, and no repeated description is given in the embodiments of the present invention.
It can be seen that, in the clean reaction chamber 501 of the cleaning apparatus 500 described in fig. 6, oxygen-containing contaminants on the surface of the semiconductor substrate can be removed by heating to form an intermediate, so that controllability in removing the oxygen-containing contaminants is improved, and it is beneficial to improve removal effect of the oxygen-containing contaminants. In addition, compared with the plasma method in the prior art, the method can also be used for SiO 2 the/SiN aspect has a high removal selection ratio. Moreover, the intermediate and the oxygen-containing pollutant on the surface of the semiconductor substrate can be further controlled to react at a required reaction temperature to form a solid byproduct, and the solid byproduct can be removed by sublimating the solid byproduct, so that the oxygen-containing pollutant can be effectively removed. And when the reaction gas is introduced, the carrier gas can be introduced together, so that the mixing of the reaction gas can be accelerated, the temperature required by the reaction can be transferred to the reaction gas, the concentration of the reaction gas can be controlled, and the reaction controllability can be improved. Further, in the process of generating the solid by-product by reacting the intermediate with the oxygen-containing pollutant, the intelligent control of the particle size and the distribution of the solid by-product can be further realized through the generation control parameters corresponding to the determined by-product generation influence factors, so that the solid by-product with smaller particle size and uniform particle size distribution is generated, and the problem of shielding effect caused by uneven particle distribution and large flake shape of the solid by-product is solved. Furthermore, the semiconductor substrate is loaded by the substrate loading seat unit, so that the position of the semiconductor substrate is favorably realizedThe control flexibility (such as height) is favorable for improving the reaction efficiency and further the removal efficiency of oxygen-containing pollutants, and can also realize the uniform distribution of gas through a fluid distribution unit in a clean reaction cavity, further realize the full combination of the gas and be favorable for improving the efficiency of heating to form an intermediate; the fluid distribution unit in the clean reaction chamber provides the reaction temperature required by the reaction to form the intermediate and/or provides the reaction temperature required by the sublimation of the solid by-product, so that the efficiency of providing the required temperature is improved, and the reaction efficiency is improved. Furthermore, the removal of oxygen-containing pollutants and carbon-containing pollutants can be realized based on the same clean reaction cavity, so that the pollutant removal process can be simplified, the pollutant removal cost can be reduced, and the situation that the oxygen-containing pollutants are removed firstly to cause the bare silicon-containing substrate to be exposed in the surrounding environment again to further cause the oxygen-containing pollutants to be regenerated in situ can be reduced.
EXAMPLE six
Referring to fig. 7, fig. 7 is a schematic structural view of another cleaning apparatus according to an embodiment of the present disclosure. The cleaning equipment can provide a clean reaction chamber for the semiconductor substrate to be cleaned so as to remove pollutants on the surface of the semiconductor substrate and further clean the semiconductor substrate. As shown in fig. 7, the cleaning apparatus may include:
a clean chamber (not shown in fig. 7) in which the semiconductor substrate is placed when the semiconductor substrate needs to be cleaned; the cleaning apparatus further includes a cleaning control system for any one of the semiconductor substrates described in the first to second embodiments.
The following are specifically mentioned:
in order to verify the beneficial effects of the cleaning control system, the cleaning control method and the cleaning equipment in removing the oxygen-containing pollutants and the carbon-containing pollutants on the surface of the semiconductor substrate, the cleaning control system, the cleaning control method and the cleaning equipment provided by the invention are respectively tested in the aspects of removing the oxygen-containing pollutants and the carbon-containing pollutants on the surface of the semiconductor substrate and compared with the testing results in the following testing modes.
Experimental group 1
Test samples: a silicon oxide layer and a carbon-based mask material layer are respectively formed in a first area and a second area above a bottom layer in a deposition mode by taking a semiconductor substrate with the bottom layer being a silicon material as an object. Wherein, the thickness of the silicon bottom layer material in the test sample is 200nm, the thickness of the silicon oxide layer is 60nm and the thickness of the carbon-based mask material layer is 60nm.
The cleaning method comprises the following steps: the experimental group 1 relates to the removal of oxygen-containing contaminants based on a heating mode and carbon-containing contaminants based on a plasma mode in the same clean reaction chamber. The adopted cleaning equipment can refer to the fifth embodiment, and the specific operation mode can refer to the fourth embodiment. Wherein, the key steps of the cleaning process are listed as follows:
step S1, an intermediate forming process specifically comprises the following steps: heating fluorine-containing gas NF3 and hydrogen-containing gas NH3 to form NH4F;
s2, removing the silicon oxide layer, specifically: forming a solid by-product by reacting NH4F with silica;
s3, removing the carbon-based mask material layer, specifically: gaseous by-products are formed by reacting a hydrogen-containing plasma with a carbon-based mask material.
Experimental group 2
Test samples: a semiconductor substrate with a silicon nitride material as a bottom layer is taken as an object, and a silicon oxide layer and a carbon-based mask material layer are respectively formed in a first area and a second area above the bottom layer in a deposition mode. Wherein, the thickness of the silicon bottom layer material in the test sample is 200nm, the thickness of the silicon oxide layer is 60nm and the thickness of the carbon-based mask material layer is 60nm.
The cleaning method comprises the following steps: refer to the cleaning method of experimental group 1.
Comparative group 1
Test samples: the same semiconductor substrate as in experimental group 1 was used.
The cleaning method comprises the following steps: the comparative group 1 relates to the prior art in which oxygen-containing contaminants are removed in one clean reaction chamber based on a plasma method, and then the oxygen-containing contaminants are transferred to another clean reaction chamber to remove carbon-containing contaminants based on a plasma method. The cleaning apparatus used may be a cleaning apparatus for removing oxygen-based contaminants (e.g., siConi etching apparatus of applied materials) and a cleaning apparatus for removing carbon-based contaminants, respectively, as in the prior art. The relevant parameters of the cleaning process can be referred to the experimental group 1, and the key steps are listed as follows:
step S1', an intermediate forming process, which specifically comprises the following steps: utilizing an auxiliary far-end plasma module in the cleaning equipment for removing oxygen pollutants, and introducing fluorine-containing gas NF3 and hydrogen-containing gas NH3 into the far-end plasma module to form plasma effluents; introducing the plasma effluent into a clean reaction chamber to form NH4F;
step S2', removing the silicon oxide layer, which specifically comprises the following steps: forming a solid by-product by reacting NH4F with silica;
step S3', transferring the semiconductor substrate, specifically: transferring the semiconductor substrate processed in the step S2' to a cleaning device for removing carbon pollutants;
step S4', removing the carbon-based mask material layer, referring to the mode of the experimental group 1, specifically: gaseous by-products are formed by reacting a hydrogen-containing plasma with a carbon-based mask material.
Comparative group 2
Test samples: the same semiconductor substrate as in experimental group 2 was used.
The cleaning method comprises the following steps: refer to the cleaning method of comparative example 1.
The test method comprises the following steps: and (3) carrying out a removal effect test on the semiconductor substrate processed in the experiment group 1, the experiment group 2, the comparison group 1 and the comparison group 2, respectively selecting 15-20 sampling points in a first area and a second area of the semiconductor substrate, detecting the thicknesses of the residual pollutants and the residual bottom layer material through test equipment, then averaging, calculating the average thickness of the bottom layer material and the pollutants removed in each test object, and measuring the selection ratio. The testing device may be one of various means such as a Scanning Electron Microscope (SEM), a Transmission Electron Microscope (TEM), and a profilometer. The specific test results are shown in table 1 below.
TABLE 1
It is obvious from the experimental group and the comparative group data in the above table that the removal of the silicon oxide layer by heating can effectively reduce the etching amount to the bottom layer, and particularly when the bottom layer material is silicon nitride, the selectivity of the remover and the bottom layer material corresponding to the removal method of the present invention is significantly improved. Wherein, the selectivity ratio of silicon oxide to silicon nitride in the experimental group 2 is (60-32.8)/(200-198.7) ≈ 20.9, while the selectivity ratio of the comparative group 2 is (60-36.1)/(200-191.1) ≈ 2.7.
The above-described embodiments are merely illustrative, and the modules, units, and sub-units described as separate parts may or may not be physically separate, and parts displayed as modules may or may not be physical modules, may be located in one place, or may be distributed in multiple places. Some or all of the modules, units and sub-units can be selected according to actual needs to achieve the purpose of the scheme of the embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.
Through the above detailed description of the embodiments, those skilled in the art will clearly understand that the embodiments may be implemented by software plus a necessary general hardware platform, and may also be implemented by hardware. Based on such understanding, the above technical solutions may be embodied in the form of a software product, which may be stored in a computer-readable storage medium, wherein the storage medium includes a Read-Only Memory (ROM), a Random Access Memory (RAM), a Programmable Read-Only Memory (PROM), an Erasable Programmable Read-Only Memory (EPROM), a One-time Programmable Read-Only Memory (OTPROM), an Electrically Erasable Programmable Read-Only Memory (EEPROM), a Compact Disc-Read-Only Memory (CD-ROM) or other Memory capable of storing data, a magnetic tape, or any other computer-readable medium capable of storing data.
Finally, it should be noted that: the system and method for controlling the cleaning of a semiconductor substrate and the cleaning apparatus disclosed in the embodiments of the present invention are only disclosed as preferred embodiments of the present invention, and are only used for illustrating the technical solutions of the present invention, not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art; the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (15)
1. A cleaning control system for a semiconductor substrate is characterized in that when the semiconductor substrate needs cleaning, the semiconductor substrate is placed in a cleaning reaction chamber; the cleaning control system is used for realizing cleaning control on the semiconductor substrate which is placed in the cleaning reaction cavity and needs to be cleaned;
wherein the cleaning control system comprises:
the gas delivery control unit is used for delivering a first type of gas to the clean reaction chamber, wherein the first type of gas at least comprises a first type of reaction gas participating in forming an intermediate body, and the intermediate body is used for removing oxygen-containing pollutants on the surface of the semiconductor substrate;
the temperature control unit is used for heating the first type of reaction gas to a first temperature required by the first type of reaction gas to participate in the reaction to form the intermediate, so that the first type of reaction gas reacts to generate the intermediate;
a first cleaning control unit for removing oxygen-containing contaminants on the surface of the semiconductor substrate through the intermediate;
and, the first cleaning control unit includes:
the first cleaning control subunit is used for controlling the intermediate to react with the oxygen-containing pollutant on the surface of the semiconductor substrate at a second temperature to generate a solid byproduct; wherein the absolute value of the temperature difference between the first temperature and the second temperature is 80-150 ℃;
a second clean control subunit for heating the solid by-product to sublimate the solid by-product at a third temperature;
and the third cleaning control subunit is used for removing the first byproduct gas formed after the solid byproduct is sublimated.
2. The system of claim 1, wherein a fluid distribution unit and/or a substrate holder unit for holding the semiconductor substrate placed in the clean chamber are further disposed in the clean chamber;
the specific way of controlling the intermediate body to react with the oxygen-containing pollutant on the surface of the semiconductor substrate at the second temperature by the first cleaning control subunit to generate the solid byproduct comprises the following steps:
controlling the substrate carrier unit to bear the semiconductor substrate to be located at a first horizontal position and providing a second temperature required by the intermediate body to react with oxygen-containing pollutants on the surface of the semiconductor substrate to generate solid byproducts through a temperature regulation module corresponding to the substrate carrier unit, wherein when the semiconductor substrate is located at the first horizontal position and the temperature regulation module corresponding to the substrate carrier unit provides the second temperature, the intermediate body reacts with the oxygen-containing pollutants on the surface of the semiconductor substrate to generate the solid byproducts;
and (c) and (d),
the second clean control subunit heats the solid byproduct, and a specific way of sublimating the solid byproduct at a third temperature includes:
controlling the substrate carrier unit to bear the semiconductor substrate to be located at a second horizontal position, and providing a third temperature required for sublimation of the solid byproducts based on a temperature regulation module corresponding to the fluid distribution unit in the clean reaction chamber, wherein the solid byproducts undergo sublimation reaction at the third temperature;
and,
the specific manner of heating the first type of reaction gas to the first temperature required for the first type of reaction gas to participate in the reaction to form the intermediate by the temperature control unit includes:
and controlling a temperature regulation module corresponding to the fluid distribution unit to provide the first type of reaction gas to be heated to a first temperature required for the first type of reaction gas to participate in the reaction to form the intermediate.
3. The system of claim 1 or 2, wherein the first cleaning control subunit controls the intermediate body to react with the oxygen-containing contaminant on the surface of the semiconductor substrate at the second temperature to form a solid byproduct in a manner comprising:
the first cleaning control subunit determines a byproduct generation influence factor; wherein the byproduct generation influencing factor comprises one or more combination of growth temperature factor, growth pressure factor, gas composition factor and gas flow characteristic factor;
the first cleaning control subunit generates a generation control parameter corresponding to the byproduct generation influence factor according to a predetermined target distribution requirement and/or a predetermined target particle size requirement;
the first cleaning control subunit controls the intermediate to react with the oxygen-containing pollutant on the surface of the semiconductor substrate at a second temperature under the control of the generation control parameter to generate a solid byproduct.
4. The system of claim 3, wherein the target distribution requirement and/or the target particle size requirement is used to control the difference between D90 and D10 of the solid byproduct particles to be generated within a range of less than 100 um.
5. The system of claim 2, further comprising:
the plasma conveying control unit is used for conveying the plasma effluent into the clean reaction cavity; the plasma effluent is generated by introducing a second type of gas into the plasma reaction unit, wherein the second type of gas at least comprises a second type of reaction gas for the plasma reaction unit to generate the plasma effluent;
a second cleaning control unit for controlling the plasma effluents to react with the carbon-containing contaminants on the surface of the semiconductor substrate at a fourth temperature; and removing a second byproduct gas generated in the clean reaction chamber by the reaction of the plasma effluent and the carbon-containing pollutants at the fourth temperature.
6. The system of claim 5, wherein the plasma delivery control unit is specifically configured to: delivering a plasma effluent into the clean reaction chamber upon initial sublimation of the solid by-product; alternatively, the plasma effluent is delivered into the clean reaction chamber during sublimation of the solid by-product.
7. The system of claim 1 or 2, wherein the first reactive gas comprises a fluorine-containing gas and a hydrogen-containing gas;
wherein the ratio of the fluorine-containing gas to the hydrogen-containing gas is 1 to 20 to 1, and/or the fluorine-containing gas comprises NF 3 At least one of HF and the hydrogen-containing gas comprises NH 3 、H 2 At least one of water vapor, and/or the intermediate is NH 4 F。
8. The system of claim 7, wherein the first type of gas further comprises a first carrier gas;
and the first carrier gas comprises at least one of hydrogen, nitrogen, argon, xenon and helium.
9. The system of claim 8, wherein the gas delivery control unit is further configured to continuously introduce the first carrier gas into the clean reaction chamber during the process of removing oxygen-containing contaminants from the surface of the semiconductor substrate through the intermediate body.
10. The system of claim 8 or 9, wherein the gas delivery control unit delivers the first type of gas to the clean chamber by:
for each kind of the first kind of reaction gas, respectively mixing the first kind of reaction gas with the first carrier gas and conveying the mixture to the clean reaction chamber; or,
and mixing the first carrier gas with all the first type of reaction gas and conveying the mixture to the clean reaction chamber.
11. The system for controlling cleaning of semiconductor substrates according to any one of claims 1, 2, 5 and 6, wherein the first temperature is 140 ℃ to 180 ℃; and/or the presence of a gas in the gas,
the second temperature is 10-65 ℃.
12. The system of claim 5, wherein an absolute difference between any two of the first temperature, the third temperature, and the fourth temperature is less than or equal to 5 ℃.
13. The system of claim 5, wherein the second type of gas further comprises a second carrier gas; and/or the fourth temperature is 70-150 ℃.
14. A method for controlling the cleaning of a semiconductor substrate, comprising the method for controlling the cleaning performed by the system for controlling the cleaning of a semiconductor substrate according to any one of claims 1 to 13.
15. A cleaning apparatus, comprising a cleaning reaction chamber, wherein when a semiconductor substrate needs cleaning, the semiconductor substrate is placed in the cleaning reaction chamber;
wherein the cleaning apparatus further comprises a cleaning control system for the semiconductor substrate according to any one of claims 1 to 13.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101903984A (en) * | 2007-12-21 | 2010-12-01 | 应用材料股份有限公司 | Passivation layer formation by plasma clean process to reduce native oxide growth |
| JP2012129295A (en) * | 2010-12-14 | 2012-07-05 | Sumitomo Electric Ind Ltd | Method for cleaning silicon carbide semiconductor |
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| US8324114B2 (en) * | 2010-05-26 | 2012-12-04 | Lam Research Corporation | Method and apparatus for silicon oxide residue removal |
| US20120220116A1 (en) * | 2011-02-25 | 2012-08-30 | Applied Materials, Inc. | Dry Chemical Cleaning For Semiconductor Processing |
| TWI564945B (en) * | 2011-07-13 | 2017-01-01 | 聯華電子股份有限公司 | Cleaning method of semiconductor manufacturing process |
| US9177780B2 (en) * | 2012-10-02 | 2015-11-03 | Applied Materials, Inc. | Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition |
| TWI794238B (en) * | 2017-07-13 | 2023-03-01 | 荷蘭商Ａｓｍ智慧財產控股公司 | Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101903984A (en) * | 2007-12-21 | 2010-12-01 | 应用材料股份有限公司 | Passivation layer formation by plasma clean process to reduce native oxide growth |
| JP2012129295A (en) * | 2010-12-14 | 2012-07-05 | Sumitomo Electric Ind Ltd | Method for cleaning silicon carbide semiconductor |
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