CN115629516A - Layout extraction method, layout extraction system and computer medium - Google Patents
Layout extraction method, layout extraction system and computer medium Download PDFInfo
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- 238000000605 extraction Methods 0.000 title claims abstract description 73
- 238000013461 design Methods 0.000 claims abstract description 85
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- 238000011156 evaluation Methods 0.000 claims description 136
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- 238000005457 optimization Methods 0.000 claims description 13
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- 238000004364 calculation method Methods 0.000 claims description 5
- 238000005056 compaction Methods 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 abstract description 24
- 238000012937 correction Methods 0.000 abstract description 18
- 238000001259 photo etching Methods 0.000 abstract description 2
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- 230000008602 contraction Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
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Abstract
The invention relates to the technical field of photoetching, in particular to a layout extraction method, a layout extraction system and a computer medium, wherein the layout extraction method comprises the following steps: acquiring an initial design layout, and interrupting the initial design layout to acquire an interrupted layout; acquiring a mask corresponding to the initial design layout; carrying out exposure under ideal conditions by using a mask plate to obtain a required profile; analyzing the relative position of the interrupted layout and the required outline and moving the interrupted layout along the preset direction until the relative position difference achieves the expected effect; and moving the interrupted layout and then extracting to obtain an optimized layout. The interrupted layout is moved to the required contour, the consistency between the exposure contour of the mask and the layout is met, the electrical performance of the final circuit is improved, the circuit is protected, and the optical proximity correction result is further improved.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of photoetching, in particular to a layout extraction method, a layout extraction system and a computer medium.
[ background of the invention ]
The photolithography process is a core step in the manufacture of semiconductor devices and large-scale integrated circuits, and is a process of transferring a pattern on a mask plate onto a photoresist by irradiating the mask plate with light with a specific wavelength. With the continuous reduction of the feature size, the complexity of the design pattern is continuously improved, and under the imperfection and diffraction effect of the optical system, the pattern on the mask is not completely consistent with the layout on the photoresist, which greatly affects the electrical performance of the final circuit, even causes the failure of the function, and the optimization extraction of the design layout becomes one of the keys for improving the imperfection of the optical system.
[ summary of the invention ]
The invention provides a layout extraction method, a layout extraction system and a computer medium, aiming at solving the problem of incomplete optical proximity correction.
The scheme for solving the technical problem is to provide a layout extraction method, which comprises the following steps: acquiring an initial design layout, interrupting the initial design layout and acquiring an interrupted layout; acquiring a mask corresponding to the initial design layout; carrying out exposure under ideal conditions by using a mask plate to obtain a required profile; analyzing the relative position of the interrupted layout and the required outline and moving the interrupted layout along the preset direction until the relative position difference achieves the expected effect; and moving the interrupted layout and then extracting to obtain an optimized layout.
Preferably, the specific way of interrupting the design layout includes: and breaking the end point of the design layout and/or breaking the opposite side of the design layout at a fixed distance from the end point and/or breaking the projection of the design layout through the end point and/or breaking the design layout at a fixed step length.
Preferably, the method is characterized in that the obtaining of the mask comprises the following steps: demarcating a layout line area on the obtained design layout; defining a blank area between adjacent layout line areas as a gap area; placing a compact evaluation line in the layout line region, and placing a bridging evaluation line in the gap region; the compact evaluation line and the bridging evaluation line are optimized for the reticle based on the evaluation criteria.
Preferably, the compaction evaluation line and the bridging evaluation line are both arranged at the center of the overlapped part of the two line segments to be measured, the measurement is carried out along the extension direction of the evaluation line, the compaction evaluation line is judged as a defect when the width of the compaction evaluation line is less than 55nm, and the bridging evaluation line is judged as a defect when the width of the bridging evaluation line is less than 50 nm.
Preferably, before the exposure of the mask to obtain the required profile, the method further comprises the following mask optimization steps: exposing the mask under the exposure condition of ideal conditions to obtain ideal specifications; exposing the mask under a conventional exposure condition to obtain a conventional exposure profile; calculating the difference value between the exposure profile and the ideal specification based on the compact evaluation line and the bridging evaluation line to obtain an evaluation function; calculating a distance difference between the conventional exposure profile and the ideal specification by adopting an evaluation function; and continuously adjusting the position of the mask plate based on the evaluation function until the conventional exposure profile meets the ideal specification or the maximum adjustment times is reached.
Preferably, the step of interrupting the acquired initial design layout further comprises the following steps: breaking the optimized design layout into a plurality of line segments; uniformly placing a plurality of evaluation points on the broken line segments according to the same standard; and obtaining an optimized layout based on the evaluation point position.
Preferably, the specific analysis of the relative position of the interrupted layout and the demand contour includes the following steps: detecting the distance between each evaluation point and the demand profile; and carrying out weighted average on the distances measured by all the evaluation points to obtain the average distance from the evaluation points to the demand profile.
Preferably, the preset direction of the movement-interrupted layout is perpendicular to the initial design layout, and the movement distance is an average distance between the evaluation point and the demand contour.
The invention also provides a layout extraction system for solving the technical problems, which is used for extracting the layout by using the layout extraction method and comprises an identification module, an operation module and an operation module, wherein the identification module is used for acquiring the initial design layout and the corresponding mask layout for subsequent operation; the operation module is used for performing motion calculation on the interrupted layout and feeding back a final result to the operation module, and the operation module adjusts the interrupted layout according to the preset direction and the motion distance of the final result to move so as to obtain the layout with the optimized outline and the expected effect.
The present invention further provides a computer medium for solving the above technical problems, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the layout extraction method as described above when executing the computer program.
Compared with the prior art, the layout extraction method, the layout extraction system and the computer medium have the following advantages:
1. the layout extraction method comprises the following steps: acquiring an initial design layout, and interrupting the initial design layout to acquire an interrupted layout; acquiring a mask corresponding to the initial design layout; exposing under ideal conditions by using a mask to obtain a required profile; analyzing the relative position of the interrupted layout and the required outline and moving the interrupted layout along the preset direction until the relative position difference achieves the expected effect; and moving the interrupted layout and then extracting to obtain an optimized layout. The interrupted layout is moved to the required contour, the consistency between the exposure contour of the mask and the layout is met, the electrical performance of the final circuit is improved, the circuit is protected, and the optical proximity correction result is further improved.
2. The specific way of interrupting the design layout by the layout extraction method comprises the following steps: the end points of the design layout are interrupted, or/and opposite sides with fixed distances from the end points are interrupted, or/and projection interruption and/or fixed step length interruption are carried out on the design layout through the end points. By the method, three interruption modes for the outline of the design layout can be simultaneously carried out, the working efficiency is improved, the result is better, and a foundation is provided for subsequent work.
3. The method for extracting the layout comprises the following steps of: demarcating a layout line area on the obtained design layout; defining a blank area between adjacent layout line areas as a gap area; placing a compact evaluation line in the layout line region, and placing a bridging evaluation line in the gap region; the compact evaluation line and the bridging evaluation line are optimized for the reticle based on the evaluation criteria. The mask is preliminarily optimized, so that the short circuit or open circuit defect condition can be directly eliminated, the result of exposure under ideal conditions on the design layout in different areas can be visually obtained by dividing the areas and placing two evaluation lines, and the defect problem embodied on the basis of the result is corrected, so that the final result is optimized better.
4. According to the layout extraction method, the compact evaluation line and the bridging evaluation line are both arranged in the center of the overlapping part of the two line segments to be measured, measurement is carried out along the extension direction of the evaluation line, if the width of the compact evaluation line is less than 55nm, the defect is judged, and if the width of the bridging evaluation line is less than 50nm, the defect is judged. By measuring the lengths of the exposure profile in the directions of the compact evaluation line and the bridging evaluation line, the defect data of the required profile can be visually obtained, the compression mold plate is adjusted based on all defects, the perfect required profile without the compact bridging defect is finally obtained, the follow-up operation is facilitated, and the comprehensiveness of optical proximity correction is further improved.
5. The method for extracting the layout further comprises the following steps of: breaking the optimized design layout into a plurality of line segments; uniformly placing a plurality of evaluation points on the broken line segments according to the same standard; and obtaining an optimized layout based on the evaluation point position. By the method, the outline of the design layout is interrupted, subsequent adjustment is facilitated, the evaluation points are placed on the interrupted design layout, positioning is performed based on the evaluation points, and subsequent position adjustment is facilitated.
6. The specific analysis of the relative position of the interrupted layout and the required outline in the layout extraction method comprises the following steps: detecting the distance between each evaluation point and the demand profile; and carrying out weighted average on the distances measured by all the evaluation points to obtain the average distance from the evaluation points to the demand profile. By this method, the optimum adjustment distance is found.
7. According to the layout extraction method, the preset direction of the moved interrupted layout is perpendicular to the initial design layout, and the moving distance is the average distance between the evaluation point and the required outline. By the method, the position of the line segment formed by breaking is moved to obtain an optimized layout, the designed layout moves towards the required contour, the original difference can be eliminated, and the integrity of optical proximity correction is improved.
8. The layout extraction method of the invention also comprises the optimization step of the mask before the exposure of the mask to obtain the required outline: exposing the mask under the exposure condition of ideal conditions to obtain the ideal specification; exposing the mask under a conventional exposure condition to obtain a conventional exposure profile; calculating the difference value between the exposure profile and the ideal specification based on the compact evaluation line and the bridging evaluation line to obtain an evaluation function; calculating a distance difference between the conventional exposure profile and the compact bridging specification using an evaluation function; the reticle position is continuously adjusted based on the merit function until the exposure profile conforms to the tight bridge specification or the maximum number of adjustments is reached. The exposure effect can be better through the optimization of the mask plate, so that the completeness of the optical proximity correction is improved, the position and the exposure effect of the mask plate are corrected through the evaluation function, the optimal exposure effect under the exposure condition under the ideal condition is obtained and serves as a demand profile, and the perfection degree of the optical proximity correction is further improved.
9. The invention also provides a layout extraction system, which is used for extracting the layout by using the layout extraction method and comprises an identification module, an operation module and an operation module, wherein the identification module is used for acquiring the initial design layout and the corresponding mask layout for subsequent operation; the operation module is used for performing motion calculation on the interrupted layout and feeding back a final result to the operation module, and the operation module adjusts the interrupted layout according to a preset direction and a motion distance of the final result to move so as to obtain the layout achieving an expected effect.
10. The invention also provides a memory, a processor and a computer program which is stored on the memory and can run on the processor, when the processor executes the computer program, the layout extraction method is realized, the same beneficial effects as the layout extraction method are achieved, and the description is omitted.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a flowchart illustrating steps of a layout extraction method according to a first embodiment of the present invention.
Fig. 2 is a flowchart of a step S2 in the layout extraction method according to the first embodiment of the present invention.
Fig. 3 is a schematic diagram of an initial image before extraction in a layout extraction method according to a first embodiment of the present invention.
Fig. 4 is a schematic diagram of an optimized image extracted by the layout extraction method according to the first embodiment of the present invention.
Fig. 5 is a flowchart of a step S3 in a layout extraction method according to a first embodiment of the present invention.
Fig. 6 is a flowchart of a step S1 in a layout extraction method according to a first embodiment of the present invention.
Fig. 7 is a flowchart of a step S4 in the layout extraction method according to the first embodiment of the present invention.
Fig. 8 is a schematic structural diagram of a layout extraction system according to a second embodiment of the present invention.
Description of the figures:
1. a layout extraction system;
11. an identification module; 12. an operation module; 13. and an operation module.
[ detailed description ] A
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
Referring to fig. 1, a layout extraction method according to a first embodiment of the present invention includes the following steps:
s1: acquiring an initial design layout, and interrupting the initial design layout to acquire an interrupted layout;
s2: acquiring a mask corresponding to the initial design layout;
s3: carrying out exposure under ideal conditions by using a mask plate to obtain a required profile;
s4: analyzing the relative position of the interrupted layout and the required outline and moving the interrupted layout along the preset direction until the relative position difference achieves the expected effect;
s5: and extracting the moved interrupted layout to obtain an optimized layout.
It should be noted that, in the present invention, an ideal exposure profile refers to an exposure profile that all positions contract the full solution of the bridging defect under all exposure conditions; the reticle is formed by moving the outline of the broken layout.
Further, referring to fig. 2, the obtaining of the mask includes the following steps:
s21: demarcating a layout line area on the obtained design layout;
s22: defining a blank area between adjacent layout line areas as a gap area;
s23: placing a compact evaluation line in the layout line area, and placing a bridging evaluation line in the gap area;
s24: and obtaining and optimizing the mask plate by using the contraction evaluation line and the bridging evaluation line based on the evaluation standard.
The compact bridging optimizer is used for measuring and searching defects in a design layout by placing a compact evaluation line and a bridging evaluation line in the design layout, and adjusting the position of a mask according to a preset standard, so that the defects are eliminated, the placement of the evaluation line can be placed based on an interruption point, and the obtained design layout can be preliminarily optimized.
Understandably, the defect condition of short circuit or open circuit can be directly eliminated by the preliminary optimization of the mask, the exposure effect can be better by the optimization of the mask, so that the completeness of the optical proximity correction is improved, the contour optimization result meeting the expected specification value under all conditions can be obtained by moving the interrupted layout to the required contour, and the result of the optical proximity correction is further improved.
In addition, the method can completely replace manual adjustment through script optimization, and complete automatic extraction of the optimized contour is realized.
Furthermore, the criterion for judging the defects according to the evaluation line width is not limited, a user can adjust and set according to actual requirements, the compact evaluation line and the bridging evaluation line are both arranged at the center of the overlapped part of the two line segments to be detected and are measured along the extension direction of the evaluation line, the defects are judged if the width of the compact evaluation line is less than 55nm, and the defects are judged if the width of the bridging evaluation line is less than 50 nm.
It should be noted that the line width and the gap value in the design layout are not limited, the definition of the defect is also adjusted according to the actual situation, and in the actual situation, the line width value may be larger than the defect, so as to perform optimization, and the specific situation is subject to the actual condition.
Understandably, through the region definition and the placement of the two evaluation lines, the result of the design layout subjected to the exposure under the ideal condition in different regions can be intuitively obtained, and the defect problem embodied based on the result is corrected, so that the final result is more optimized.
In addition, by measuring the lengths of the exposure profile in the directions of the compact evaluation line and the bridging evaluation line, the defect data of the demand profile can be visually obtained, the compression mold plate is adjusted based on all defects, the perfect demand profile without the compact bridging defect is finally obtained, the follow-up operation is facilitated, and the comprehensiveness of the optical proximity correction is further improved.
Further, the specific way of interrupting the design layout includes: and breaking the end point of the design layout and/or breaking the opposite side of the design layout at a fixed distance from the end point and/or breaking the projection of the design layout through the end point and/or breaking the design layout at a fixed step length.
It should be noted that the three modes can be performed simultaneously, the breaking mode is performed according to a fixed step length, other areas which are not broken are broken according to the fixed step length, if the remaining line segments are smaller than one step length, the remaining line segments are not broken, if the remaining line segments are larger than one step length, the remaining line segments are broken at the middle points of the line segments, and the detection points of the contraction evaluation line and the bridging evaluation line are placed after the breaking is completed;
and then optimizing the profile through optical proximity correction, if the shortage is detected, expanding the line width of the mask, and if the bridging is detected, expanding the gap of the mask. Finally, the ideal specification without the short-circuit bridging defect under the ideal condition exposure condition and the corresponding optimized mask plate can be obtained.
By the method, three interruption modes for designing the layout outline can be simultaneously performed, the working efficiency is improved, the result is better, and a foundation is provided for subsequent work.
With reference to fig. 3 to 4, a curve is a demand profile, a broken line is an interrupted layout found through the evaluation point, and the interrupted layout is adjusted to move towards the demand profile, so that a layout result meeting an expected required value, that is, an optimized profile is obtained.
Further, referring to fig. 5, before obtaining the required profile by exposing the reticle, the method further includes a step of optimizing the reticle:
s31: exposing the mask under the exposure condition of ideal conditions to obtain the ideal specification;
s32: exposing the mask under the conventional exposure condition to obtain a conventional exposure profile;
s33: calculating the difference between the exposure profile and the ideal specification based on the tightening evaluation line and the bridging evaluation line to obtain an evaluation function;
s34: calculating a distance difference between the conventional exposure profile and the ideal specification by adopting an evaluation function;
s35: the reticle position is continuously adjusted based on the evaluation function until the conventional exposure profile conforms to the ideal specification or a maximum number of adjustments is reached.
It should be noted that, when the lithography machine is exposed, the lithography machine cannot be guaranteed to be always under an ideal condition during working, and therefore, different exposure conditions exist, which may cause various problems such as different exposure intensities, different exposure focal lengths, and the like, so that the mask needs to be optimized, a solver needs to be used for optimizing the mask, the type of the used solver is not limited, more OPC solvers, that is, solvers for optimizing the mask based on a design layout, are adopted, and the types of OPC solvers are numerous, such as a Pinch bridge solver and the like, and the Pinch bridge solver considers two adjacent line segments of an exposure profile in an optimization process, and if a defect is encountered, the two adjacent line segments move. In the embodiment of the invention, the solver optimizes the mask plate based on the design layout, and the solver for local mask optimization can be used to achieve the required technical effect.
Understandably, the solver can correct the position and the exposure effect of the mask plate through the evaluation function to obtain the optimal exposure effect under the conventional exposure condition, and the perfection degree of the optical proximity correction is further improved.
In addition, the demand contour is matched with the interrupted layout, namely the demand contour is intersected with the interrupted layout and is in a state of half of the demand contour and half of the demand contour; when the mask is exposed, in order to obtain the optimal state of the mask exposure, the overall shape of the mask also needs to be adjusted, and the coverage surface of the mask needs to be adjusted based on the shrinkage defect and the bridging defect, for example: under the condition that the relative position of the interrupted layout and the requirement profile meets the requirement, the shortest span of the requirement profile obtained by exposing the mask is 40nm, the span of the design layout along the shortest span direction is 50nm, the shortest span of the requirement profile needs to be expanded by 5nm outwards along two sides of the requirement profile, the exposure effect of the mask is not affected for ensuring, the mask also needs to be correspondingly adjusted outwards, the adjusting mode is that when the requirement profile obtained by exposing is expanded outwards, the peripheral profile at the shortest span of the mask is correspondingly expanded, the expansion distance is changed based on the expansion distance of the requirement profile and the result of the ratio of the light intensity gradient calculated by the optical model, and the finally determined peripheral profile of the mask is obtained.
Further, referring to fig. 6, the step of interrupting the contour of the obtained design layout specifically includes the following steps:
s15: breaking the optimized design layout into a plurality of line segments;
s16: uniformly placing a plurality of evaluation points on the plurality of broken line segments according to the same standard;
s17: and obtaining an optimized layout based on the evaluation point position.
It should be noted that the evaluation points are placed in a manner that the broken line segments are uniformly placed away from the same side of the design layout and the distances from the evaluation points to the nearest line segments are equal, then the broken layout is obtained through simulation according to the actual positions of the evaluation points, the required contour distances from all the evaluation points to the ideal condition under the exposure condition are calculated, and the average value obtained through weighted average is used as the movement amount of the broken layout; each line segment moves independently, the moving speed and the accuracy of the outline can be improved, and the moving range of the line segment is not limited.
In addition, the interrupted layout can be obtained in a non-unique manner, and can be obtained through the original design layout or other manners, which is not limited herein.
By the method, the outline of the design layout is interrupted, subsequent adjustment is facilitated, the evaluation points are placed close to the generated line segments, positioning is carried out based on the evaluation points, the interrupted layout is obtained, and subsequent position adjustment is facilitated.
Further, referring to fig. 7, the specific analysis of the relative position between the interrupted layout and the demand contour includes the following steps:
s41: detecting the distance between each evaluation point and the requirement outline;
s42: and carrying out weighted average on the distances measured by all the evaluation points to obtain the average distance from the evaluation points to the demand profile.
Understandably, by this method, the optimal adjustment distance is found.
Further, the preset direction of the moved interrupted layout is perpendicular to the initial design layout, and the moving distance is the average distance between the evaluation point and the required contour.
It should be noted that the motion direction of the interrupted layout is perpendicular to the edge of the initial design layout, and a coordinate position meeting the expected effect is found in the motion process, so that the interrupted layout and the required contour form a mutually staggered condition.
By the method, the line segment formed by breaking is moved to obtain an optimized contour result, the broken layout, namely the design layout contour, moves towards the required contour, the original defects can be eliminated, and the integrity of optical proximity correction is improved.
Referring to fig. 8, a layout extraction system 1 according to a second embodiment of the present invention performs layout extraction by using the layout extraction method described above, and includes an identification module 11, an operation module 12, and an operation module 13.
It should be noted that, the identification module 11 is configured to obtain an initial design layout and a corresponding mask layout for performing subsequent operations; the operation module 12 is configured to perform motion calculation on the interrupted layout, and feed back a final result to the operation module 13, and the operation module 13 adjusts the interrupted layout according to a preset direction and a motion distance of the final result to move so as to obtain a layout with an optimized contour that achieves a desired effect.
Specifically, the layout extraction system 1 has the same beneficial effects as the layout extraction method, and details are not repeated herein.
The invention also provides a memory, a processor and a computer program which is stored in the memory and can run on the processor, when the processor executes the computer program, the layout extraction method is realized, the method has the same beneficial effects as the layout extraction method, and the description is omitted.
It will be appreciated that the processes described above with reference to the flowcharts may be implemented as computer software programs, in accordance with the disclosed embodiments of the invention. For example, embodiments of the present disclosure include a computer program product comprising a computer program embodied on a computer-readable medium, the computer program comprising program code for performing the method illustrated by the flow chart. In such an embodiment, the computer program may be downloaded and installed from a network via the communication section, and/or installed from a removable medium. The computer program performs the above-mentioned functions defined in the method of the present application when executed by a Central Processing Unit (CPU). It should be noted that the computer readable medium described herein can be a computer readable signal medium or a computer readable storage medium or any combination of the two. A computer readable storage medium may include, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the foregoing. More specific examples of the computer readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing. In the context of this application, a computer readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device. In this application, however, a computer readable signal medium may include a propagated data signal with computer readable program code embodied therein, for example, in baseband or as part of a carrier wave. Such a propagated data signal may take many forms, including, but not limited to, electro-magnetic, optical, or any suitable combination thereof. A computer readable signal medium may also be any computer readable medium that is not a computer readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. Program code embodied on a computer readable medium may be transmitted using any appropriate medium, including but not limited to: wireless, wire, fiber optic cable, RF, etc., or any suitable combination of the foregoing.
Computer program code for carrying out operations for aspects of the present application may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, smalltalk, C + +, and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any type of network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or the connection may be made to an external computer (for example, through the Internet using an Internet service provider).
In the embodiments provided herein, it should be understood that "B corresponding to a" means that B is associated with a, from which B can be determined. It should also be understood, however, that determining B from a does not mean determining B from a alone, but may also be determined from a and/or other information.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. Those skilled in the art should also appreciate that the embodiments described in this specification are exemplary and alternative embodiments, and that the acts and modules illustrated are not required in order to practice the invention.
In various embodiments of the present invention, it should be understood that the sequence numbers of the above-mentioned processes do not imply an inevitable order of execution, and the execution order of the processes should be determined by their functions and inherent logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention.
The flowchart and block diagrams in the figures of the present application illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will be understood that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
Compared with the prior art, the layout extraction method, the layout extraction system and the computer medium have the following advantages:
1. the layout extraction method comprises the following steps: acquiring an initial design layout, and interrupting the initial design layout to acquire an interrupted layout; acquiring a mask corresponding to the initial design layout; carrying out exposure under ideal conditions by using a mask plate to obtain a required profile; analyzing the relative position of the interrupted layout and the required outline and moving the interrupted layout along the preset direction until the relative position difference achieves the expected effect; and moving the interrupted layout and then extracting to obtain an optimized layout. The interrupted layout is moved to the required contour, the consistency between the exposure contour of the mask and the layout is met, the electrical performance of the final circuit is improved, the circuit is protected, and the optical proximity correction result is further improved.
2. The specific way of interrupting the design layout by the layout extraction method comprises the following steps: and breaking the end point of the design layout and/or breaking the opposite side of the design layout at a fixed distance from the end point and/or breaking the projection of the design layout through the end point and/or breaking the design layout at a fixed step length. By the method, three interruption modes for the outline of the design layout can be simultaneously carried out, the working efficiency is improved, the result is better, and a foundation is provided for subsequent work.
3. The method for extracting the layout comprises the following steps of: demarcating a layout line area on the obtained design layout; defining a blank area between adjacent layout line areas as a gap area; placing a compact evaluation line in the layout line region, and placing a bridging evaluation line in the gap region; the mask is optimized based on evaluation criteria using the compaction evaluation line and the bridging evaluation line. The mask is preliminarily optimized to directly remove the short circuit or open circuit defect, the region is defined and two evaluation lines are placed, the result of exposure under ideal conditions on the design layout in different regions can be visually obtained, and the defect problem embodied based on the result is corrected, so that the final result is optimized better.
4. According to the layout extraction method, the compact evaluation line and the bridging evaluation line are both arranged in the center of the overlapping part of the two line segments to be measured, measurement is carried out along the extension direction of the evaluation line, if the width of the compact evaluation line is less than 55nm, the defect is judged, and if the width of the bridging evaluation line is less than 50nm, the defect is judged. By measuring the lengths of the exposure profile in the directions of the compact evaluation line and the bridging evaluation line, the defect data of the required profile can be visually obtained, the compression mold plate is adjusted based on all defects, the perfect required profile without the compact bridging defect is finally obtained, the follow-up operation is facilitated, and the comprehensiveness of optical proximity correction is further improved.
5. The method for extracting the layout of the invention comprises the following steps of: breaking the optimized design layout into a plurality of line segments; uniformly placing a plurality of evaluation points on the broken line segments according to the same standard; and obtaining an optimized layout based on the evaluation point position. By the method, the outline of the design layout is interrupted, subsequent adjustment is facilitated, the evaluation points are placed on the interrupted design layout, positioning is performed based on the evaluation points, and subsequent position adjustment is facilitated.
6. The specific analysis of the relative position of the interrupted layout and the required outline in the layout extraction method comprises the following steps: detecting the distance between each evaluation point and the demand profile; and carrying out weighted average on the distances measured by all the evaluation points to obtain the average distance from the evaluation points to the demand profile. By this method, the optimal adjustment distance is found.
7. According to the layout extraction method, the preset direction of the moved interrupted layout is perpendicular to the initial design layout, and the moving distance is the average distance between the evaluation point and the required outline. By the method, the position of the broken line segment is moved to obtain an optimized layout, the designed layout moves towards the required contour, the original difference can be eliminated, and the perfection of optical proximity correction is further improved.
8. The layout extraction method of the invention also comprises the optimization step of the mask before the exposure of the mask to obtain the required outline: exposing the mask under the exposure condition of ideal conditions to obtain ideal specifications; exposing the mask under the conventional exposure condition to obtain a conventional exposure profile; calculating the difference between the exposure profile and the ideal specification based on the tightening evaluation line and the bridging evaluation line to obtain an evaluation function; calculating a distance difference between the conventional exposure profile and the compact bridging specification using an evaluation function; the reticle position is continuously adjusted based on the merit function until the exposure profile conforms to the tight bridge specification or the maximum number of adjustments is reached. The exposure effect can be better through optimizing the mask, so that the completeness of optical proximity correction is improved, the position and the exposure effect of the mask are corrected through the evaluation function, the optimal exposure effect under the exposure condition under the ideal condition is obtained and serves as a demand profile, and the perfection degree of the optical proximity correction is further improved.
9. The invention also provides a layout extraction system, which is used for extracting the layout by using the layout extraction method and comprises an identification module, an operation module and an operation module, wherein the identification module is used for acquiring the initial design layout and the corresponding mask layout for subsequent operation; the operation module is used for performing motion calculation on the interrupted layout and feeding a final result back to the operation module, the operation module adjusts the interrupted layout according to a preset direction and a motion distance of the final result to move so as to obtain the layout achieving an expected effect, and the operation module has the same beneficial effects as the layout extracting method, and the description is omitted here.
10. The invention also provides a memory, a processor and a computer program which is stored on the memory and can run on the processor, when the processor executes the computer program, the layout extraction method is realized, the same beneficial effects as the layout extraction method are achieved, and the description is omitted.
The layout extraction method, the layout extraction system and the computer medium disclosed by the embodiment of the invention are described in detail, specific examples are applied in the text to explain the principle and the implementation mode of the invention, and the description of the embodiments is only used for helping to understand the method and the core idea of the invention; meanwhile, for the persons skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present description should not be construed as a limitation to the present invention, and any modification, equivalent replacement, and improvement made within the principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A layout extraction method is characterized by comprising the following steps:
acquiring an initial design layout, and interrupting the initial design layout to acquire an interrupted layout;
acquiring a mask corresponding to the initial design layout;
exposing under ideal conditions by using a mask to obtain a required profile;
analyzing the relative position of the interrupted layout and the required outline and moving the interrupted layout along the preset direction until the relative position difference achieves the expected effect;
and extracting the moved interrupted layout to obtain an optimized layout.
2. The layout extraction method according to claim 1, wherein the specific way of interrupting the design layout comprises: the end points of the design layout are interrupted, or/and opposite sides with fixed distances from the end points are interrupted, or/and projection interruption and/or fixed step length interruption are carried out on the design layout through the end points.
3. The layout extraction method as claimed in claim 1, wherein the obtaining of the mask comprises the steps of:
demarcating a layout line area on the obtained design layout;
defining a blank area between adjacent layout line areas as a gap area;
placing a compact evaluation line in the layout line region, and placing a bridging evaluation line in the gap region;
the mask is optimized based on evaluation criteria using the compaction evaluation line and the bridging evaluation line.
4. The layout extraction method according to claim 3, characterized in that: and the tightening evaluation line and the bridging evaluation line are both arranged at the center of the overlapping part of the two line segments to be detected, measurement is carried out along the extension direction of the evaluation line, the tightening evaluation line is judged to be a defect if the width of the tightening evaluation line is less than 55nm, and the bridging evaluation line is judged to be a defect if the width of the bridging evaluation line is less than 50 nm.
5. The layout extraction method according to claim 3, characterized in that the step of interrupting the contour of the acquired design layout further comprises the steps of:
breaking the optimized design layout into a plurality of line segments;
uniformly placing a plurality of evaluation points on the broken line segments according to the same standard;
and obtaining an optimized layout based on the evaluation point position.
6. The layout extraction method according to claim 5, characterized in that the specific analysis of the relative positions of the interrupted layout and the demand contours comprises the steps of:
detecting the distance between each evaluation point and the demand profile;
and carrying out weighted average on the distances measured by all the evaluation points to obtain the average distance from the evaluation points to the demand profile.
7. The layout extraction method according to claim 6, characterized in that: the preset direction of the moved interrupted layout is perpendicular to the initial design layout, and the moving distance is the average distance between the evaluation point and the required contour.
8. The layout extraction method as claimed in claim 3, wherein before the exposure of the mask to obtain the required profile, the method further comprises the mask optimization step of:
exposing the mask under the exposure condition of ideal conditions to obtain the ideal specification;
exposing the mask under the conventional exposure condition to obtain a conventional exposure profile;
calculating the difference value between the exposure profile and the ideal specification based on the compact evaluation line and the bridging evaluation line to obtain an evaluation function;
calculating a distance difference between the conventional exposure profile and the ideal specification by adopting an evaluation function;
the reticle position is continuously adjusted based on the evaluation function until the conventional exposure profile conforms to the ideal specification or a maximum number of adjustments is reached.
9. A layout extraction system for performing layout extraction by using the layout extraction method according to any one of claims 1 to 8, characterized in that: the system comprises an identification module, an operation module and an operation module, wherein the identification module is used for acquiring an initial design layout and a corresponding mask layout for subsequent operation; the operation module is used for carrying out motion calculation on the interrupted territory and feeding back a final result to the operation module, and the operation module adjusts the interrupted territory according to the preset direction and the motion distance of the final result and moves the territory so as to obtain the optimized outline territory achieving the expected effect.
10. A computer medium comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the layout extraction method according to any one of claims 1-8 when executing the computer program.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116992818A (en) * | 2023-09-20 | 2023-11-03 | 深圳市小铭工业互联网有限公司 | Circuit board layout design method and system |
| CN117274267A (en) * | 2023-11-22 | 2023-12-22 | 合肥晶合集成电路股份有限公司 | Automatic detection method and device for mask layout, processor and electronic equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116992818A (en) * | 2023-09-20 | 2023-11-03 | 深圳市小铭工业互联网有限公司 | Circuit board layout design method and system |
| CN116992818B (en) * | 2023-09-20 | 2024-01-05 | 深圳市小铭工业互联网有限公司 | Circuit board layout design method and system |
| CN117274267A (en) * | 2023-11-22 | 2023-12-22 | 合肥晶合集成电路股份有限公司 | Automatic detection method and device for mask layout, processor and electronic equipment |
| CN117274267B (en) * | 2023-11-22 | 2024-04-05 | 合肥晶合集成电路股份有限公司 | Automatic detection method and device for mask layout, processor and electronic equipment |
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