CN115591855A - 一种半导体零部件的超高洁净度清洗方法 - Google Patents
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- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H01L21/67011—Apparatus for manufacture or treatment
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Abstract
本发明属于金属及其制品表面清洗技术领域,尤其涉及一种半导体零部件超高洁净度清洗技术及其应用。本发明所提供的半导体零部件超高洁净度清洗技术将超声清洗及脱脂合二为一,通过在超声清洗的同时加入清洗剂,同时进行超声清洗及脱脂,不仅能够在达到前期超声清洗的效果,而且能去除了半导体零部件表面的脂质,省却单独脱脂步骤;并且在酸蚀及酸洗阶段省去了酸蚀步骤,使用更高浓度的硝酸直接对半导体零部件进行清洗,同时达到了酸蚀和硝酸清洗的效果,两者的改变极大的简化了工艺步骤和减少了原料的消耗,大大提高了清洗的效率和降低生产成本。
Description
技术领域
本发明属于金属制品表面清洗技术领域,尤其涉及一种半导体零部件的超高洁净度清洗方法。
背景技术
随着半导体行业的发展,半导体的应用日益广泛,在不同的应用领域,对半导体的表面清洁度要求也不同。但通常来说,半导体对洁净度的要求普遍非常高,如果使用洁净度达不到标准的零部件,会造成晶圆的污染,导致严重经济损失,所以必须要去除零部件表面灰尘粒子、油污、脏污、金属离子等污染物,保证零部件的清洁度。
为此,现有技术公开了一种针对半导体铝合金零部件进行清洗的工艺,该工艺通过对半导体铝合金零部件依次进行超声清洗、清水浸泡清洗、脱脂、清水浸泡清洗、酸蚀、清水浸泡清洗、硝酸浸泡、清水浸泡清洗、喷水冲洗、热水溢流清洗、氮气吹干以及无尘包装等处理,可去除半导体铝合金零部件表面的灰尘粒子、金属离子、油污、脏污等污染物,以达到清洁的效果。但上述工艺在所有化学品处理后的清洗均为浸泡式清洗,且清洗时所使用的水并非纯水,这样不利于很好的除杂,另外该工艺在用3%的氢氟酸和20%的硝酸进行酸蚀处理之后,又用20%的硝酸浸泡,这会导致清洗步骤繁杂。因此,有必要开发一种清洗效果更好、步骤工艺更简便的半导体零部件的超高洁净度清洗方法。
发明内容
鉴于此,本发明要解决的技术问题是克服现有的半导体清洗工艺除杂效果欠佳、工艺步骤繁杂的缺陷。
本发明的目的是通过以下技术方案实现的:
本发明提供了一种半导体零部件超高洁净度清洗方法,包括以下步骤:
对半导体零部件依次进行超声脱脂清洗、一次纯水溢流清洗、酸洗、二次纯水溢流清洗、纯水高压冲洗、热纯水溢流清洗、以及惰性气体吹干;其中,
所述超声脱脂清洗步骤使用浓度为12%v/v~18%v/v的清洗剂,所述清洗剂的成分包括焦磷酸钾、四硼酸钾;
所述酸洗步骤为使用浓度为50%v/v的硝酸水溶液清洗3~5min。
可选地,在所述超声脱脂清洗步骤中,先将所述半导体零部件置于所述清洗剂中浸泡2~3min,之后再进行超声清洗5~10min。
可选地,在所述超声脱脂清洗步骤中,所述清洗剂的温度为50~55℃,超声频率为35~45KHz,电流大小为4.5~6.5A。
可选地,所述一次纯水溢流清洗的时间为2~5min,当纯水中的铜含量>30ppb时更换所述纯水。
可选地,在所述酸洗步骤中,当所述硝酸水溶液中的铜含量>10ppm时更换所述硝酸水溶液。
可选地,所述二次纯水溢流清洗的时间为2~5min,当纯水中的铜含量>30ppb时更换所述纯水。
可选地,所述纯水高压冲洗步骤中,水压为100~1000PSI,喷水距离为10~20cm。
可选地,所述热纯水溢流清洗步骤中,水温为40~45℃,清洗时间为3~5min,水质≥2MΩ。
可选地,所述惰性气体吹干步骤中,使用滤孔<0.01μm的过滤器将惰性气体过滤后再将所述半导体零部件吹干。
可选地,上述的半导体零部件超高洁净度清洗方法,还包括无尘包装步骤:将经所述惰性气体吹干后的所述半导体零部件置于在千级以上无尘室中进行真空包装。
与现有技术相比,本发明的技术方案具有如下优点:
1、本发明实施例提供的半导体零部件超高洁净度清洗方法,将超声清洗及脱脂合二为一,通过在超声清洗的同时加入清洗剂,同时进行超声清洗及脱脂,不仅能够在达到前期超声清洗的效果,而且能去除了半导体零部件表面的脂质,省去单独脱脂步骤;并且在酸蚀及酸洗阶段省去了酸蚀步骤,使用更高浓度的硝酸直接对半导体零部件进行清洗,同时达到了酸蚀和硝酸清洗的效果,两者的改变极大的简化了工艺步骤和减少了原料的消耗,大大提高了清洗的效率和降低生产成本。
2、本发明提供的半导体零部件超高洁净度清洗技术通过实时监测清洗过程中各步骤的槽液中物质的含量,特别是铜的含量,以铜含量为标准对清洗液进行监测,当槽液中的铜含量超过10ppm时,更换清洗液或铜含量超过30ppb时,更换纯水,及时的更换清洗液,避免了重复过多的清洗造成清洗液的污染而导致清洗过程中对附着在半导体零部件表面的污染物清洗不干净,保证了半导体零部件清洗的高洁净度。
3、并且本发明所提供的半导体零部件超高洁净度清洗技术能够广泛应用于多种半导体零部件的表面清洁,极大的方便了企业生产和科研的进行,能够大大提高企业生产和科研的效率。
具体实施方式
提供下述实施例是为了更好地进一步理解本发明,并不局限于所述最佳实施方式,不对本发明的内容和保护范围构成限制,任何人在本发明的启示下或是将本发明与其他现有技术的特征进行组合而得出的任何与本发明相同或相近似的产品,均落在本发明的保护范围之内。
实施例中未注明具体实验步骤或条件者,按照本领域内的文献所描述的常规实验步骤的操作或条件即可进行。所用试剂或仪器未注明生产厂商者,均为可以通过市购获得的常规试剂产品。在本发明实施例中,ISOPREP清洗剂为美国麦德美公司生产的ISOPREP49L清洗剂,使用时按水与清洗剂的体积比为100:15的比例用纯水将清洗剂配制成15%v/v;实施例中使用的化学品均为分析纯及以上;使用的水均为纯水及以上。
其中,在本实施例中所使用的惰性气体为氮气;清洗槽专用于特定系列的材料的清洗,如AL 6061铝材部件应在专门清洗6000系列铝材的工艺流水线上进行清洗,与含铜材料(如铜管)连接的组件(如焊接、钎焊或模压)不得在浴槽中加工,并且在整个过程中需要全程佩戴乳胶手套、口罩等防护,既保护人身安全又避免外界环境对零件造成污染。
本发明实施例提供了一种半导体零部件超高洁净度清洗技术,包括以下步骤:
步骤一:将半导体零部件放入装有清洗液的超声波清洗槽内清洗,槽液浓度为15%v/v的ISOPREP,清洗温度为50~55℃,清洗时间为5~10min;
步骤二:将半导体零部件放入纯水中进行溢流清洗,清洗时间为2min;
步骤三:将零部件放入硝酸中进行清洗,浓度为50%v/v硝酸,时间为3~5min,清洗液中的铜含量>10ppm时,更换硝酸继续清洗;
步骤四:将零部件放入纯水中进行溢流清洗,清洗时间为2min;
步骤五:再通过喷水枪对零部件进行冲洗,喷水枪压力为100~1000PSI,喷水距离为11~19cm;
步骤六:放入热纯水中溢流清洗,水质≥2MΩ,水洗温度为39~45℃,水洗时间为3~5min;
步骤七:再用滤孔<0.01μm的过滤器过滤后的氮气吹干;
步骤八:在千级或更高等级的无尘室进行真空包装,使用的千级或更高等级无尘布及PE袋对清洗后半导体零部件进行包装。
清洗过程中使用纯水清洗时清洗液中的铜含量>30ppb时,更换纯水。
实施例1
对超高真空环境使用的匀气盘半导体零部件进行清洗:
步骤一:将半导体零部件放入装有清洗液的超声波清洗槽内清洗,超声频率35KHz,电流大小为4.5A,槽液浓度为15%v/v的ISOPREP,清洗温度为50℃,清洗时间为5min;
步骤二:将半导体零部件放入纯水中进行溢流清洗,清洗时间为2min;
步骤三:将零部件放入硝酸中进行清洗,浓度为50%v/v硝酸,时间为3min;
步骤四:将零部件放入纯水中进行溢流清洗,清洗时间为2min;
步骤五:再通过喷水枪对零部件进行冲洗,喷水枪压力为200PSI,喷水距离为11cm;
步骤六:放入热纯水中溢流清洗,水质≥2MΩ,水洗温度为39℃,水洗时间为3min;
步骤七:再用滤孔0.01μm的过滤器过滤后的氮气吹干;
步骤八:在千级无尘室进行真空包装,使用的千级无尘布对清洗后半导体零部件进行包装。
实施例2
对超高真空环境所使用的盖子半导体零部件进行清洗:
步骤一:将半导体零部件放入装有清洗液的超声波清洗槽内清洗,超声频率45KHz,电流大小为6.5A,槽液浓度为15%v/v的ISOPREP,清洗温度为55℃,清洗时间为10min;
步骤二:将半导体零部件放入纯水中进行溢流清洗,清洗时间为2min;
步骤三:将零部件放入硝酸中进行清洗,浓度为50%v/v硝酸,时间为5min;
步骤四:将零部件放入纯水中进行溢流清洗,清洗时间为2min;
步骤五:再通过喷水枪对零部件进行冲洗,喷水枪压力为900PSI,喷水距离为19cm;
步骤六:放入热纯水中溢流清洗,水质≥2MΩ,水洗温度为45℃,水洗时间为5min;
步骤七:再用滤孔为0.01μm的过滤器过滤后的氮气吹干;
步骤八:在千级无尘室进行真空包装,使用的千级PE袋均对清洗后半导体零部件进行包装。
试验例
对实施例所清洗后的半导体零部件进行洁净度检测,检测结果如下:
实施例1清洗后的半导体零部件洁净度检测如表1所示:
表1
实施例2清洗后的半导体零部件洁净度检测如表2所示:
表2
显然,上述实施例仅仅是为清楚地说明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围之中。
Claims (10)
1.一种半导体零部件超高洁净度清洗方法,其特征在于,包括以下步骤:
对半导体零部件依次进行超声脱脂清洗、一次纯水溢流清洗、酸洗、二次纯水溢流清洗、纯水高压冲洗、热纯水溢流清洗、以及惰性气体吹干;其中,
所述超声脱脂清洗步骤使用浓度为12%v/v~18%v/v的清洗剂,所述清洗剂的成分包括焦磷酸钾、四硼酸钾;
所述酸洗步骤为使用浓度为20%v/v~50%v/v的硝酸水溶液清洗3~5min。
2.根据权利要求1所述的半导体零部件超高洁净度清洗方法,其特征在于,在所述超声脱脂清洗步骤中,先将所述半导体零部件置于所述清洗剂中浸泡2~3min,之后再进行超声清洗5~10min。
3.根据权利要求2所述的半导体零部件超高洁净度清洗方法,其特征在于,在所述超声脱脂清洗步骤中,所述清洗剂的温度为50~55℃,超声波频率为35~45KHz,电流大小为4.5~6.5A。
4.根据权利要求1所述的半导体零部件超高洁净度清洗方法,其特征在于,所述一次纯水溢流清洗的时间为2~5min,当纯水中的铜含量>30ppb时更换所述纯水。
5.根据权利要求1所述的半导体零部件超高洁净度清洗方法,其特征在于,在所述酸洗步骤中,当所述硝酸水溶液中的铜含量>10ppm时更换所述硝酸水溶液。
6.根据权利要求1所述的半导体零部件超高洁净度清洗方法,其特征在于,所述二次纯水溢流清洗的时间为2~5min,当纯水中的铜含量>30ppb时更换所述纯水。
7.根据权利要求1所述的半导体零部件超高洁净度清洗方法,其特征在于,所述纯水高压冲洗步骤中,水压为100~1000PSI,喷水距离为10~20cm。
8.根据权利要求1所述的半导体零部件超高洁净度清洗方法,其特征在于,所述热纯水溢流清洗步骤中,水温为40~45℃,清洗时间为3~5min,水质≥2MΩ。
9.根据权利要求1所述的半导体零部件超高洁净度清洗方法,其特征在于,所述惰性气体吹干步骤中,使用滤孔<0.01μm的过滤器将惰性气体过滤后再将所述半导体零部件吹干。
10.根据权利要求1~9中任意一项所述的半导体零部件超高洁净度清洗方法,其特征在于,还包括无尘包装步骤:将经所述惰性气体吹干后的所述半导体零部件置于在千级以上无尘室中进行真空包装。
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