CN115529801A - Structure of micro-channel radiator and preparation method thereof - Google Patents
Structure of micro-channel radiator and preparation method thereof Download PDFInfo
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- CN115529801A CN115529801A CN202211220046.5A CN202211220046A CN115529801A CN 115529801 A CN115529801 A CN 115529801A CN 202211220046 A CN202211220046 A CN 202211220046A CN 115529801 A CN115529801 A CN 115529801A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910052802 copper Inorganic materials 0.000 claims abstract description 79
- 239000010949 copper Substances 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000007788 liquid Substances 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 11
- 239000000243 solution Substances 0.000 claims description 56
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 34
- 238000005530 etching Methods 0.000 claims description 31
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 24
- 238000004381 surface treatment Methods 0.000 claims description 20
- 239000000919 ceramic Substances 0.000 claims description 19
- 239000011259 mixed solution Substances 0.000 claims description 19
- 230000003647 oxidation Effects 0.000 claims description 18
- 238000007254 oxidation reaction Methods 0.000 claims description 18
- 238000005554 pickling Methods 0.000 claims description 17
- 238000005245 sintering Methods 0.000 claims description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 238000003466 welding Methods 0.000 claims description 15
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 12
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 claims description 12
- WWNKWHZTXAUBAH-UHFFFAOYSA-N C(C=C)(=O)O.C(C=C)(=O)O.C(C=C)(=O)O.P(O)(O)O Chemical compound C(C=C)(=O)O.C(C=C)(=O)O.C(C=C)(=O)O.P(O)(O)O WWNKWHZTXAUBAH-UHFFFAOYSA-N 0.000 claims description 12
- 229920001732 Lignosulfonate Polymers 0.000 claims description 12
- 238000013461 design Methods 0.000 claims description 12
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 12
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 12
- 229960004063 propylene glycol Drugs 0.000 claims description 12
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 12
- 230000007246 mechanism Effects 0.000 claims description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 10
- 239000012670 alkaline solution Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 10
- 238000002791 soaking Methods 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 6
- BZSXEZOLBIJVQK-UHFFFAOYSA-N 2-methylsulfonylbenzoic acid Chemical compound CS(=O)(=O)C1=CC=CC=C1C(O)=O BZSXEZOLBIJVQK-UHFFFAOYSA-N 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 claims description 5
- 238000004321 preservation Methods 0.000 claims description 5
- 239000008213 purified water Substances 0.000 claims description 5
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 238000005303 weighing Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 13
- 239000012530 fluid Substances 0.000 abstract description 7
- 238000001816 cooling Methods 0.000 abstract description 5
- 239000000498 cooling water Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 41
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20218—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant without phase change in electronic enclosures
- H05K7/20272—Accessories for moving fluid, for expanding fluid, for connecting fluid conduits, for distributing fluid, for removing gas or for preventing leakage, e.g. pumps, tanks or manifolds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Plasma & Fusion (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a structure of a micro-channel radiator and a preparation method thereof, and particularly relates to the technical field of micro-channel water-cooling heat dissipation. The invention adopts an upper and lower layered structure, the water supply layer is positioned at one end far away from a hot surface, and the heat reaching the lower layer is less, therefore, the temperature rise of the fluid of the water supply layer is small, and the fluid can be used as cooling water for providing an upper runner layer at the same time, the temperature gradient is gentle, and the contact part between the upper and lower non-channel layers is designed in a staggered way, so that the contact area between the water and the copper surface can be increased in the liquid flowing process, namely, the heat dissipation area is increased, and the heat dissipation efficiency is improved.
Description
Technical Field
The invention relates to the technical field of micro-channel water-cooling heat dissipation, in particular to a structure of a micro-channel heat sink and a preparation method thereof.
Background
The high heat caused by the integration and high power of electronic devices inevitably leads to the reduction of the performance and reliability of the devices, so that the materials of the devices cause the damage and deformation of the internal structure due to the mismatch of the thermal expansion coefficients. Therefore, the stability of the device operation is directly influenced by the quality of the heat dissipation of the device. The design of the micro-channel radiator taking away heat in a liquid cooling manner is prominent in the field of heat dissipation.
The size of the micro-channel radiator channel is in the range of micron to sub-millimeter scale, and the characteristics of the micro-scale fluid not only relate to the miniaturization of the space scale, but also relate to more complex scale effect. Meanwhile, water-cooling heat dissipation is a common heat dissipation mode, and the traditional water-cooling structure is simple and is mostly direct-current one-way. Due to the uniqueness of the inlet and outlet, temperature gradients along the fluid flow direction are an objective problem, adversely affecting the reliability of the device. One method is to increase the flow rate of the liquid cooling liquid by increasing the pressure continuously. However, this method will cause the waste of the performance of the flow channel and the increase of the pressure drop of the flow channel will increase the power consumption of the heat dissipation system. The other method starts from the design of the inlet and the outlet of the flow channel, and solves the problem of temperature gradient through the design of multiple inlets and multiple outlets and through a complex internal flow channel. However, the thickness of the flow channel can be increased by the method, and the complicated inlet and outlet design can limit the connection mode of the external pipeline, so that the use of scenes is limited.
Disclosure of Invention
The present invention is directed to a micro-channel heat sink structure and a method for manufacturing the same, so as to solve the problems of the background art.
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a structure of microchannel radiator, includes the radiator body, the radiator body adopts two copper sheets to constitute, and two be formed with water supply layer and runner layer between the copper sheet, the water supply layer is located the below on runner layer, the non-channel layer interlayer contact position dislocation set on water supply layer and runner layer.
The invention also provides a preparation method of the structure of the micro-channel radiator, which comprises the following steps:
the method comprises the following steps: film design, namely arranging the upper and lower patterns of the two copper sheets of the radiator body in a staggered manner, so that a microchannel formed between the patterns at the bottom can contact the surface of the upper pattern in the liquid flowing process;
step two: sticking a film, namely sticking photosensitive dry films on the surfaces of the two copper sheets, wherein the thickness of the dry film is 10-100 mu m;
step three: exposing, and vertically irradiating the dry film by ultraviolet rays;
step four: developing, namely spraying an alkaline solution on the exposed dry film for developing;
step five: etching, namely etching the developed copper sheet by using the mixed solution;
step six: surface treatment, namely sequentially using a film stripping solution, a pickling solution, a microetching solution and purified water to carry out surface treatment on the etched microchannel copper sheet;
step seven: and (3) surface bonding, namely performing oxidation sintering treatment on the micro-channel on the surface of the copper sheet, and then welding the two micro-channel copper sheets under the condition of vacuum or protective gas to obtain the structure of the micro-channel radiator.
In a preferred embodiment, when the micro-channel on the surfaces of the two copper sheets is designed in the first step, a half-etched area, a full-etched area and a non-etched area are arranged on the surfaces of the copper sheets, wherein the half-etched area is arranged in an array grid, the side length of each grid is 0.01-0.25mm, the distance between two adjacent grids is 0.01-0.2mm, the full-etched area is completely filled, and the non-etched area is blank.
In a preferred embodiment, the exposure energy used in the exposure in the third step is 10-60J/cm 2 The ultraviolet light is vertically irradiated on the surface of the dry film.
In a preferred embodiment, the alkaline solution in the fourth step is 0.5-1.5wt% sodium carbonate solution or potassium carbonate solution, the developing temperature is 20-50 ℃, and the developing time is 1-5min.
In a preferred embodiment, the mixed solution for etching in the fifth step is a mixed solution of 10-30wt% of hydrogen peroxide and 10-30wt% of sodium chlorate, the etching temperature is 20-50 ℃, and the etching time is 5-16min.
In a preferred embodiment, the temperature of the treatment with the film stripping solution in the sixth step is 30-60 ℃, the soaking time is 1-5min, and the film stripping solution is a 3-8wt% aqueous solution of NaOH; the pickling solution is treated at the temperature of 20-40 ℃, the soaking time is 30-60s, and the pickling solution is 0.01-0.02wt% of dilute sulfuric acid solution; the microetching liquid is processed at the temperature of 20-40 ℃ for 30-100s, and comprises the following raw materials in percentage by mass: 30-40% of dilute sulfuric acid, 20-30% of sodium persulfate, 10-20% of 2-phenylimidazole, 2-8% of lignosulfonate, 5-15% of phosphorous acid triacrylate, 2-5% of polyoxyethylene ether and 3-8% of 1, 2-propylene glycol.
In a preferred embodiment, the microetching solution is prepared by the following steps: weighing 0.02-0.04wt% of dilute sulfuric acid and 0.02-0.04wt% of sodium persulfate, uniformly mixing, adding 2-phenylimidazole, lignosulfonate, phosphorous acid triacrylate, polyoxyethylene ether and 1, 2-propylene glycol into the mixed solution, and heating and uniformly stirring at 40-60 ℃ to obtain the microetching solution.
In a preferred embodiment, in the step seven, during the oxidation sintering, the oxidation is completed by keeping the temperature of 200-1050 ℃ for 10-50min in the air atmosphere, and then the sintering is completed by keeping the temperature of 900-1300 ℃ for 1-24h under the action of protective gas; in the seventh step, the welding temperature is 300-980 ℃, and the heat preservation time after welding is 20-120min.
In a preferred embodiment, in the step seven, during the oxidation sintering, a ceramic limiting mechanism is used for limiting two copper sheets, the thickness of each copper sheet is 0.2-1mm, the ceramic limiting mechanism is made of AlN ceramic, and the thickness of the AlN ceramic is one time to two times of the thickness of each copper sheet.
The invention has the technical effects and advantages that:
1. the invention provides a structure of a micro-channel radiator, which adopts an upper and lower layered structure, wherein a water supply layer is positioned at one end far away from a hot surface, and the heat reaching the lower layer is less, so that the temperature rise of fluid of the water supply layer is small, and the fluid can be regarded as cooling water and can be used for providing gentle temperature gradient for an upper channel layer, and the contact part between the upper and lower non-channel layers is designed in a staggered manner, so that the contact area between water and the copper surface can be increased in the liquid flowing process, namely the heat dissipation area is increased, and the heat dissipation efficiency is improved;
2. the invention carries out etching, surface treatment and surface bonding on the microchannel radiator, firstly uses stripping liquid and pickling solution to soak the microchannel radiator during surface treatment, and then uses microetching solution to carry out treatment, wherein 2-phenylimidazole, lignosulfonate, phosphorous acid triacrylate, polyoxyethylene ether and 1, 2-propylene glycol are added into the microetching solution, so that the bonding force on the surface of the microchannel radiator can be effectively enhanced during surface treatment of the microchannel radiator, the stability of the surface of the microchannel radiator is improved, the microchannel radiator is not easy to oxidize after microetching, and the yield of products is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a microchannel heat sink according to the present invention;
FIG. 2 is a schematic cross-sectional view of a microchannel heat sink of the present invention;
FIG. 3 is a schematic view of a design of a copper sheet film according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of another embodiment of the copper sheet film design of the present invention;
FIG. 5 is a flow chart of the preparation of the present invention;
FIG. 6 is a schematic view of a ceramic spacing mechanism of the present invention;
FIG. 7 is a schematic cross-sectional view of a copper sheet placed on a ceramic limiting mechanism according to the present invention.
In the figure: 1. a copper sheet; 2. a water supply layer; 3. a flow channel layer; 4. a half-etched region; 5. a full etch region; 6. a non-etched region; 7. pottery stop gear.
Detailed Description
Example 1:
the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention and the accompanying drawings, and it is to be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
Referring to the attached figure 1 of the specification, the invention provides the following technical scheme: the utility model provides a structure of microchannel radiator, includes the radiator body, the radiator body adopts two copper sheets 1 to constitute, and two be formed with water supply layer 2 and runner layer 3 between the copper sheet 1, water supply layer 2 is located the below on runner layer 3, the contact position dislocation set between the non-channel layer of water supply layer 2 and runner layer 3.
The invention also provides a preparation method of the structure of the micro-channel radiator, which comprises the following steps:
the method comprises the following steps: film design, wherein upper and lower patterns of two copper sheets 1 of a radiator body are arranged in a staggered manner, so that a microchannel formed between the bottom patterns can contact the surface of the upper pattern in the liquid flowing process;
step two: sticking films, namely sticking photosensitive dry films on the surfaces of the two copper sheets, wherein the thickness of the dry films is 50 micrometers;
step three: exposing, and vertically irradiating the dry film by ultraviolet rays;
step four: developing, namely spraying an alkaline solution on the exposed dry film for developing;
step five: etching, namely etching the developed copper sheet by using the mixed solution;
step six: surface treatment, namely sequentially using a film stripping solution, a pickling solution, a microetching solution and purified water to carry out surface treatment on the etched microchannel copper sheet;
step seven: and (3) surface bonding, namely performing oxidation sintering treatment on the micro-channels on the surfaces of the copper sheets, and then welding the two micro-channel copper sheets under the condition of vacuum or protective gas to obtain the structure of the micro-channel radiator.
In a preferred embodiment, in the first step, when the micro channels on the surfaces of the two copper sheets are designed, a half-etched area 4, a full-etched area 5 and a non-etched area 6 are arranged on the surface of the copper sheet, the half-etched area 4 is arranged in an array grid, the side length of each grid is 0.15mm, the distance between two adjacent grids is 0.1mm, the full-etched area 5 is completely filled, the non-etched area 6 is blank, and the distance between the water-cooled channels is designed to be greater than 500 μm to ensure the half-etched effect.
In a preferred embodiment, the exposure energy used in the exposure in step three is 40J/cm 2 The ultraviolet light is vertically irradiated on the surface of the dry film, the intensity of the ultraviolet light is controlled, and the light is prevented from entering from the side edge of a small square grid in a half-etching area and being overexposed.
In a preferred embodiment, the alkaline solution in the fourth step is a 1wt% sodium carbonate solution or potassium carbonate solution, the developing temperature is 35 ℃, and the developing time is 3min, so that the copper exposure integrity of the small grid areas in the half-etched area is ensured.
In a preferred embodiment, the mixed solution for etching in the fifth step is a mixed solution of 20wt% hydrogen peroxide and 20wt% sodium chlorate, the etching temperature is 30 ℃, and the etching time is 10min.
In a preferred embodiment, the temperature of the treatment with the stripping solution in the sixth step is 45 ℃, the soaking time is 3min, and the stripping solution is a 5wt% aqueous solution of NaOH; the temperature of the pickling solution is 30 ℃, the soaking time is 45s, and the pickling solution is 0.015wt% of dilute sulfuric acid solution; the microetching liquid is processed at the temperature of 30 ℃ for soaking for 80s, and comprises the following raw materials in percentage by mass: 35% of dilute sulfuric acid, 25% of sodium persulfate, 15% of 2-phenylimidazole, 7% of lignosulfonate, 10% of phosphorous acid triacrylate, 3% of polyoxyethylene ether and 5% of 1, 2-propylene glycol.
In a preferred embodiment, the preparation method of the microetching solution comprises the following steps: weighing 0.03wt% of dilute sulfuric acid and 0.03wt% of sodium persulfate, uniformly mixing, adding 2-phenylimidazole, lignosulfonate, phosphorous acid triacrylate, polyoxyethylene ether and 1, 2-propylene glycol into the mixed solution, and heating and uniformly stirring at 50 ℃ to obtain the microetching solution.
In a preferred embodiment, in the step seven, the oxidation sintering is completed by maintaining the temperature at 800 ℃ for 30min in an air atmosphere, and then maintaining the temperature at 1000 ℃ for 12h under the action of protective gas; in the seventh step, the welding temperature is 500 ℃, and the heat preservation time after welding is 70min.
In a preferred embodiment, in the step seven, a ceramic limiting mechanism is used for limiting two copper sheets during the oxidation sintering, the thickness of each copper sheet is 0.6mm, the ceramic limiting mechanism is made of AlN ceramic, the thickness of the AlN ceramic is 1.5 times that of each copper sheet, the two half-etched copper sheet pattern surfaces are oppositely placed between two burning bearing plates to apply pressure, and a simple template is prepared to limit the positions of the two copper sheets and prevent the displacement of the bonding process by using the ceramic with the thickness between one and two times that of the copper sheets.
Example 2:
different from the embodiment 1, the micro-channel heat radiator structure comprises the following raw materials in percentage by mass: 30% of dilute sulfuric acid, 28% of sodium persulfate, 16% of 2-phenylimidazole, 6% of lignosulfonate, 12% of phosphorous acid triacrylate, 4% of polyoxyethylene ether and 4% of 1, 2-propylene glycol.
Example 3:
different from the embodiments 1 and 2, the structure of the micro-channel radiator comprises 40% of dilute sulfuric acid, 22% of sodium persulfate, 12% of 2-phenylimidazole, 5% of lignosulfonate, 10% of phosphorous acid triacrylate, 4% of polyoxyethylene ether and 7% of 1, 2-propylene glycol.
Comparative example 1:
the invention provides the following technical scheme: the utility model provides a structure of microchannel radiator, includes the radiator body, the radiator body adopts two copper sheets 1 to constitute, and two be formed with water supply layer 2 and runner layer 3 between the copper sheet 1, water supply layer 2 is located the below on runner layer 3, the contact position dislocation set between the non-channel layer of water supply layer 2 and runner layer 3.
The invention also provides a preparation method of the structure of the micro-channel radiator, which comprises the following steps:
the method comprises the following steps: film design, wherein upper and lower patterns of two copper sheets 1 of a radiator body are arranged in a staggered manner, so that a microchannel formed between the bottom patterns can contact the surface of the upper pattern in the liquid flowing process;
step two: sticking films, namely sticking photosensitive dry films on the surfaces of the two copper sheets, wherein the thickness of the dry films is 50 micrometers;
step three: exposing, and vertically irradiating the dry film by ultraviolet rays;
step four: developing, namely spraying an alkaline solution on the exposed dry film for developing;
step five: etching, namely etching the developed copper sheet by using a mixed solution;
step six: performing surface treatment, namely performing surface treatment on the etched microchannel copper sheet by sequentially using a film stripping solution, a pickling solution, a microetching solution and purified water;
step seven: and (3) surface bonding, namely performing oxidation sintering treatment on the micro-channels on the surfaces of the copper sheets, and then welding the two micro-channel copper sheets under the condition of vacuum or protective gas to obtain the structure of the micro-channel radiator.
In a preferred embodiment, in the first step, when the micro-channels on the surfaces of the two copper sheets are designed, the surfaces of the copper sheets are provided with a half-etched area 4, a full-etched area 5 and an unetched area 6, the half-etched area 4 is arranged in an array grid, the side length of each grid is 0.15mm, the distance between two adjacent grids is 0.1mm, the full-etched area 5 is completely filled, and the unetched area 6 is blank.
In a preferred embodiment, the exposure energy used in the exposure in step three is 40J/cm 2 The ultraviolet light is vertically irradiated on the surface of the dry film.
In a preferred embodiment, the alkaline solution in the fourth step is a 1wt% sodium carbonate solution or potassium carbonate solution, the developing temperature is 35 ℃, and the developing time is 3min.
In a preferred embodiment, the mixed solution during etching in the fifth step is a mixed solution of 20wt% of hydrogen peroxide and 20wt% of sodium chlorate, the etching temperature is 30 ℃, and the etching time is 10min.
In a preferred embodiment, the temperature of the treatment with the film removing solution in the sixth step is 45 ℃, the soaking time is 3min, and the film removing solution is 5wt% of NaOH aqueous solution; the pickling solution is treated at the temperature of 30 ℃ for 45s, and the pickling solution is 0.015wt% of dilute sulfuric acid solution; the microetching liquid is processed at the temperature of 30 ℃ for 80s, and comprises the following raw materials in percentage by mass: 50% of dilute sulfuric acid and 50% of sodium persulfate.
In a preferred embodiment, the microetching solution is prepared by the following steps: weighing 0.03wt% of dilute sulfuric acid and 0.03wt% of sodium persulfate, and uniformly stirring.
In a preferred embodiment, in the step seven, the oxidation sintering is completed by maintaining the temperature at 800 ℃ for 30min in an air atmosphere, and then maintaining the temperature at 1000 ℃ for 12h under the action of protective gas; in the seventh step, the welding temperature is 500 ℃, and the heat preservation time after welding is 70min.
In a preferred embodiment, in the step seven, during the oxidation sintering, a ceramic limiting mechanism is used for limiting two copper sheets, the thickness of each copper sheet is 0.6mm, the ceramic limiting mechanism is made of AlN ceramic, and the thickness of the AlN ceramic is 1.5 times that of each copper sheet.
Comparative example 2:
the invention provides the following technical scheme: the radiator comprises a radiator body, the radiator body adopts two copper sheets 1 to constitute, and two be formed with water supply layer 2 and runner layer 3 between the copper sheet 1, water supply layer 2 is located the below on runner layer 3, the contact position dislocation set between the non-channel layer of water supply layer 2 and runner layer 3.
The invention also provides a preparation method of the structure of the micro-channel radiator, which comprises the following steps:
the method comprises the following steps: film design, wherein upper and lower patterns of two copper sheets 1 of the radiator body are arranged in a staggered manner, so that a microchannel formed between the patterns at the bottom can contact the surface of the upper pattern in the liquid flowing process;
step two: sticking films, namely sticking photosensitive dry films on the surfaces of the two copper sheets, wherein the thickness of the dry films is 50 mu m;
step three: exposing, and vertically irradiating the dry film by ultraviolet rays;
step four: developing, namely spraying an alkaline solution on the exposed dry film for developing;
step five: etching, namely etching the developed copper sheet by using a mixed solution;
step six: surface treatment, namely sequentially using a film stripping solution, a pickling solution, a microetching solution and purified water to carry out surface treatment on the etched microchannel copper sheet;
step seven: and (3) surface bonding, namely performing oxidation sintering treatment on the micro-channel on the surface of the copper sheet, and then welding the two micro-channel copper sheets under the condition of vacuum or protective gas to obtain the structure of the micro-channel radiator.
In a preferred embodiment, in the first step, when the micro-channels on the surfaces of two copper sheets are designed, a half-etched area 4, a full-etched area 5 and a non-etched area 6 are arranged on the surface of the copper sheet, the half-etched area 4 is arranged in an array of squares, the side length of each square is 0.15mm, the distance between two adjacent squares is 0.1mm, the full-etched area 5 is completely filled, the non-etched area 6 is blank, and the distance between water-cooled channels is designed to be greater than 500 μm to ensure the half-etched effect.
In a preferred embodiment, the exposure energy used in the exposure in step three is 40J/cm 2 The ultraviolet light is vertically irradiated on the surface of the dry film, the intensity of the ultraviolet light is controlled, and the light is prevented from entering from the side edge of a small square grid in a half-etching area and being overexposed.
In a preferred embodiment, the alkaline solution in the fourth step is a 1wt% sodium carbonate solution or potassium carbonate solution, the developing temperature is 35 ℃, and the developing time is 3min, so that the copper exposure integrity of the small grid areas in the half-etched area is ensured.
In a preferred embodiment, the mixed solution during etching in the fifth step is a mixed solution of 20wt% of hydrogen peroxide and 20wt% of sodium chlorate, the etching temperature is 30 ℃, and the etching time is 10min.
In a preferred embodiment, the temperature of the treatment with the stripping solution in the sixth step is 45 ℃, the soaking time is 3min, and the stripping solution is a 5wt% aqueous solution of NaOH; the pickling solution is treated at the temperature of 30 ℃ for 45s, and the pickling solution is 0.015wt% of dilute sulfuric acid solution; the microetching liquid is processed at the temperature of 30 ℃ for 80s, and comprises the following raw materials in percentage by mass: 35% of dilute sulfuric acid, 25% of sodium persulfate, 15% of 2-phenylimidazole, 7% of lignosulfonate, 10% of phosphorous acid triacrylate, 3% of polyoxyethylene ether and 5% of 1, 2-propylene glycol.
In a preferred embodiment, the preparation method of the microetching solution comprises the following steps: weighing 0.03wt% of dilute sulfuric acid and 0.03wt% of sodium persulfate, uniformly mixing, then adding 2-phenylimidazole, lignosulfonate, phosphorous acid triacrylate, polyoxyethylene ether and 1, 2-propylene glycol into the mixed solution, and heating and uniformly stirring at 50 ℃ to obtain the microetching solution.
In a preferred embodiment, during the oxidation sintering in the seventh step, the oxidation is completed by keeping the temperature at 800 ℃ for 30min in an air atmosphere, and then the sintering is completed by keeping the temperature at 1000 ℃ for 12h under the action of protective gas; in the seventh step, the welding temperature is 500 ℃, and the heat preservation time after welding is 70min.
Taking the micro-channel radiator copper sheets prepared in the embodiments 1 to 3 as an experimental group 1, an experimental group 2 and an experimental group 3 respectively, taking the micro-channel radiator copper sheets produced in the comparative examples as a control group, observing the surface condition of the micro-channel radiator after the surface treatment of the selected micro-channel radiator copper sheets, recording the etching rate of the micro-etching solution, and recording the yield after the surface bonding of each embodiment and the comparative example; the test results are shown in table 1:
TABLE 1
As can be seen from table 1, the microchannel heat sink produced by the invention has the advantages of simple structural processing, high yield, high bonding force after surface treatment of the copper sheet, and difficult oxidation, compared with example 1, the comparative example 1 adopts common microetching liquid, the performance after surface treatment of the copper sheet is obviously reduced, the microetching rate is lower, compared with example 1, a limiting mechanism is not adopted during surface bonding, and the yield is reduced, so the microchannel heat sink adopts an upper and lower layered structure, a water supply layer is positioned at one end far away from a hot surface, and the heat reaching the lower layer is less, therefore, the temperature rise of fluid of the water supply layer is small, and cooling water can be provided for the upper runner layer and a lower runner layer at the same time, the temperature gradient is gentle, and the contact part between the upper and lower non-channel layers is designed, so that the contact area between water and the copper surface can be increased in the liquid flowing process, namely the heat dissipation area is increased, the heat dissipation efficiency is improved, the problem caused by the temperature gradient in the use process can be reduced, a multichannel structure is not required to be arranged, and the microchannel heat sink is prepared by adopting the process of film design, film-sticking-exposure-development-etching-surface treatment, and the preparation method is simple and convenient, and suitable for popularization; the invention carries out etching, surface treatment and surface bonding on the microchannel radiator, firstly uses the stripping liquid and the pickling liquid to soak the microchannel radiator during the surface treatment, and then uses the microetching liquid to carry out the treatment, wherein 2-phenylimidazole, lignosulfonate, phosphorous acid triacrylate, polyoxyethylene ether and 1, 2-propylene glycol are added into the microetching liquid, the bonding force on the surface of the microchannel radiator can be effectively enhanced during the surface treatment of the microchannel radiator, the stability of the surface of the microchannel radiator is improved, the microchannel radiator is not easy to oxidize after the microetching, and the yield of products is improved.
And finally: the above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that are within the spirit and principle of the present invention are intended to be included in the scope of the present invention.
Claims (10)
1. The utility model provides a structure of microchannel radiator, includes the radiator body, its characterized in that: the radiator body adopts two copper sheets (1) to constitute, and two be formed with water supply layer (2) and runner layer (3) between copper sheet (1), water supply layer (2) are located the below of runner layer (3), the contact position dislocation set between the non-channel layer of water supply layer (2) and runner layer (3).
2. The method of claim 1, wherein the step of forming a microchannel heat sink comprises: the method comprises the following steps:
the method comprises the following steps: film design, wherein upper and lower patterns of two copper sheets (1) of the radiator body are arranged in a staggered manner, so that a microchannel formed between the patterns at the bottom can contact the surface of the upper pattern in the liquid flowing process;
step two: sticking a film, namely sticking a photosensitive dry film on the surfaces of the two copper sheets (1), wherein the thickness of the dry film is 10-100 mu m;
step three: exposing, and vertically irradiating the dry film by ultraviolet rays;
step four: developing, namely spraying an alkaline solution on the exposed dry film for developing;
step five: etching, namely etching the developed copper sheet by using a mixed solution;
step six: performing surface treatment, namely performing surface treatment on the etched microchannel copper sheet by sequentially using a film stripping solution, a pickling solution, a microetching solution and purified water;
step seven: and (3) surface bonding, namely performing oxidation sintering treatment on the micro-channel on the surface of the copper sheet, and then welding the two micro-channel copper sheets under the condition of vacuum or protective gas to obtain the structure of the micro-channel radiator.
3. The method of claim 2, wherein the step of forming the microchannel heat sink further comprises the steps of: when the micro-channel on the surfaces of the two copper sheets (1) in the first step is designed, a half-etched area (4), a full-etched area (5) and a non-etched area (6) are arranged on the surface of the copper sheet (1), the half-etched area (4) is arranged in an array grid mode, the side length of each grid is 0.01-0.25mm, the distance between every two adjacent grids is 0.01-0.2mm, the full-etched area (5) is completely filled, and the non-etched area (6) is blank.
4. The method of claim 2, wherein the step of forming a microchannel heat sink comprises: the exposure energy adopted during the exposure in the third step is 10 to 60J/cm 2 The ultraviolet light is vertically irradiated on the surface of the dry film.
5. The method of claim 2, wherein the step of forming a microchannel heat sink comprises: and in the fourth step, the alkaline solution is 0.5-1.5wt% of sodium carbonate solution or potassium carbonate solution, the developing temperature is 20-50 ℃, and the developing time is 1-5min.
6. The method of claim 2, wherein the step of forming a microchannel heat sink comprises: and in the fifth step, the mixed solution is 10-30wt% of hydrogen peroxide and 10-30wt% of sodium chlorate mixed solution during etching, the etching temperature is 20-50 ℃, and the etching time is 5-16min.
7. The method of claim 2, wherein the step of forming a microchannel heat sink comprises: in the sixth step, the temperature of the film stripping liquid is 30-60 ℃, the soaking time is 1-5min, and the film stripping liquid is 3-8wt% of NaOH aqueous solution; the temperature of the pickling solution is 20-40 ℃, the soaking time is 30-60s, and the pickling solution is 0.01-0.02wt% of dilute sulfuric acid solution; the microetching liquid is processed at the temperature of 20-40 ℃ for 30-100s, and comprises the following raw materials in percentage by mass: 30-40% of dilute sulfuric acid, 20-30% of sodium persulfate, 10-20% of 2-phenylimidazole, 2-8% of lignosulfonate, 5-15% of phosphorous acid triacrylate, 2-5% of polyoxyethylene ether and 3-8% of 1, 2-propylene glycol.
8. The method of claim 7, wherein the step of forming the microchannel heat sink further comprises the steps of: the preparation method of the microetching liquid comprises the following steps: weighing 0.02-0.04wt% of dilute sulfuric acid and 0.02-0.04wt% of sodium persulfate, uniformly mixing, adding 2-phenylimidazole, lignosulfonate, phosphorous acid triacrylate, polyoxyethylene ether and 1, 2-propylene glycol into the mixed solution, and heating and uniformly stirring at 40-60 ℃ to obtain the microetching solution.
9. The method of claim 2, wherein the step of forming a microchannel heat sink comprises: in the step seven, during the oxidation sintering, the temperature is kept at 200-1050 ℃ for 10-50min in the air atmosphere to complete the oxidation, and then the temperature is kept at 900-1300 ℃ for 1-24h under the action of protective gas to complete the sintering; in the seventh step, the welding temperature is 300-980 ℃, and the heat preservation time after welding is 20-120min.
10. The method of claim 2, wherein the step of forming the microchannel heat sink further comprises the steps of: and in the seventh step, the two copper sheets (1) are limited by using a ceramic limiting mechanism (7) during the oxidation sintering, the thickness of the copper sheets (1) is 0.2-1mm, the ceramic limiting mechanism (7) is made of AlN ceramic, and the thickness of the AlN ceramic is one time to two times of that of the copper sheets (1).
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