CN115488095A - Ozone cleaning method and device for silicon wafer - Google Patents
Ozone cleaning method and device for silicon wafer Download PDFInfo
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- CN115488095A CN115488095A CN202210963356.XA CN202210963356A CN115488095A CN 115488095 A CN115488095 A CN 115488095A CN 202210963356 A CN202210963356 A CN 202210963356A CN 115488095 A CN115488095 A CN 115488095A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 228
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 126
- 239000010703 silicon Substances 0.000 title claims abstract description 126
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 37
- 235000012431 wafers Nutrition 0.000 claims abstract description 124
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 78
- 238000005507 spraying Methods 0.000 claims abstract description 35
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 21
- 239000000243 solution Substances 0.000 claims description 149
- 239000007788 liquid Substances 0.000 claims description 61
- 238000002347 injection Methods 0.000 claims description 21
- 239000007924 injection Substances 0.000 claims description 21
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 238000003825 pressing Methods 0.000 claims description 7
- 239000012670 alkaline solution Substances 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000002378 acidificating effect Effects 0.000 description 4
- 239000003814 drug Substances 0.000 description 4
- 229940079593 drug Drugs 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 hydroxyl ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
Abstract
The invention discloses an ozone cleaning method and device for a silicon wafer, which comprises the following steps: firstly, preparing a cleaning solution a in an inner tank body, and then immersing a silicon wafer placing basket filled with silicon wafers into the inner tank body filled with the cleaning solution a; then injecting the cleaning solution b into a booster water pump, and then spraying the cleaning solution b out of a nozzle at a high speed, wherein the sprayed cleaning solution b and the sprayed cleaning solution a form a local vortex due to pressure difference, so that the two are fully mixed and react to generate high-concentration hydroxyl; according to the invention, the cleaning solution b is sprayed to the surface of the silicon wafer immersed in the solution a through the nozzle, and the two solutions are fully mixed on the surface of the silicon wafer to continuously generate high-concentration hydroxyl groups, so that the instant preparation and instant utilization of the hydroxyl groups are realized, the problem that the hydroxyl groups are difficult to play a role due to extremely short half-life period in the traditional ozone cleaning is solved, the advantages of high reaction rate and non-selectivity of the hydroxyl groups and organic matters are played, and the cleaning efficiency and stability of the ozone cleaning are improved.
Description
Technical Field
The invention belongs to the technical field of silicon wafer cleaning, and particularly relates to an ozone cleaning method and device for a silicon wafer.
Background
In a semiconductor manufacturing process, a silicon wafer is generally used as a substrate of a device, various performance parameters of the silicon wafer directly influence the performance of the device, and particularly, the silicon wafer has a high requirement on the surface cleanliness, the device performance is reduced or even scrapped due to pollution existing on the surface, and the product stability and the yield of a production line are influenced, so that the silicon wafer is important to be cleaned, and the silicon wafer is cleaned to achieve a good cleaning effect, so that the silicon wafer cleaning method has an important significance for improving the yield of the production line and the performance of the device.
In the prior art, a chemical cleaning method is usually adopted for cleaning the silicon wafer, and the traditional RCA method for cleaning the silicon wafer relates to the use and discharge of chemicals such as ammonia water, hydrogen peroxide, potassium hydroxide and the like, so that the environment is greatly polluted; compared with the traditional RCA cleaning method, the method for cleaning the silicon wafer by using the ozone can reduce the production cost and the emission of harmful substances, is a green and environment-friendly cleaning method, and adopts the common ozone cleaning mode that the ozone is introduced into an aqueous solution containing hydrochloric acid or hydrofluoric acid, the concentration of the ozone dissolved in the water is generally 10-100ppm, and the silicon wafer is immersed in the solution containing the ozone for cleaning, so that the aim of cleaning the silicon wafer is fulfilled.
The chemical reaction of ozone cleaning has two types, one is the direct oxidation reaction of ozone to organic matters, which is the main reaction of ozone cleaning, but has strong selectivity, namely, partial organic matters can be decomposed at a fast speed, but the decomposition speed of some organic matters is extremely slow, so that the effect of cleaning the silicon wafer by using the ozone solution at present still has a certain difference with the RCA method; the other is that the ozone reacts with hydroxyl ions in water or conjugate base of hydrogen peroxide to generate hydroxyl with extremely strong oxidizing power, the hydroxyl has very high activity and can indiscriminately decompose organic matters, but the half decay period is extremely short due to the high activity of the hydroxyl, and the extremely low concentration of the hydroxyl in the existing ozone cleaning method cannot play a cleaning role at all, so the method and the device for cleaning the silicon wafer by using the ozone are provided.
Disclosure of Invention
The invention aims to provide a method and a device for cleaning silicon wafers by ozone, which are used for solving the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: a method for cleaning a silicon wafer by ozone comprises the following steps:
A. firstly, preparing a cleaning solution a in an inner tank body, then loading a silicon wafer into a silicon wafer placing basket, and then immersing the silicon wafer placing basket filled with the silicon wafer into the inner tank body filled with the cleaning solution a for 10-40s;
B. then, conveying the pure water to a booster water pump through a solution inlet for pressurization, pressing the pressurized water pump into a spraying pipeline, spraying the pure water out of a nozzle at a high speed, wherein the injection time of the pure water lasts for 5-20s, and the pure water is used for cleaning a spraying and cleaning mechanism;
C. then the cleaning solution b is injected into a booster water pump through a solution inlet to be pressurized, then the booster water pump presses the cleaning solution b into a spraying pipeline, and then the cleaning solution b and the cleaning solution a are sprayed out from a nozzle at a high speed, and the sprayed cleaning solution b and the sprayed cleaning solution a form a local vortex due to pressure difference so that the cleaning solution b and the cleaning solution a are fully mixed and react to generate high-concentration hydroxyl;
D. then, conveying the pure water to a booster water pump through a solution inlet for pressurization, pressing the pressurized water pump into a spraying pipeline, spraying the pure water out of a nozzle at a high speed, wherein the injection time of the pure water lasts for 5-20s, and the pure water is used for cleaning a spraying and cleaning mechanism;
E. then injecting the cleaning solution c into a booster water pump for pressurization, then pressing the cleaning solution c into a jet pipeline by the booster water pump, and then jetting the cleaning solution c out from a nozzle at a high speed, wherein the injection time of the cleaning solution c lasts for 5-20s;
F. repeating the steps B-E for 1 to N times, wherein N is more than or equal to 2, after the silicon wafer is cleaned, taking the silicon wafer placing basket out of the inner groove body, and then taking the silicon wafer out of the silicon wafer placing basket;
G. and finally, conveying the pure water to a booster water pump through a solution inlet for pressurization, pressing the pressurized water pump into a spray pipeline, spraying the pure water out from a nozzle at a high speed, wherein the injection time of the pure water lasts for 5-20s, and the pure water is used for cleaning a spray cleaning mechanism.
Preferably, the cleaning solution a is a solution comprising ozone and HCL;
wherein, the concentration of ozone is 10-100ppm, and the concentration of HCL is 0.1-1%;
the cleaning solution b is KOH solution with the concentration of 0.05 to 0.2 percent, H2O2 solution with the concentration of 1 to 10 percent or H2O2 alkaline solution with the concentration of 1 to 10 percent;
the cleaning solution b is alkaline solution with the pH value of 7-13;
the cleaning solution c is an HF solution;
wherein the concentration of the HF solution is 0.05-0.2%.
Preferably, in step C, the injection speed of the cleaning solution b is 0.5m/s to 5m/s.
An ozone cleaning device for silicon wafers comprises a cleaning tank body, wherein a jet cleaning mechanism and a liquid circulation mechanism are arranged on the cleaning tank body;
the liquid circulation mechanism is used for circulating the cleaning solution in the cleaning tank body, enabling the cleaning solution to be circulated back and forth between the cleaning tank body and the liquid circulation mechanism, dissolving ozone gas in the cleaning solution, and circulating the ozone gas from the cleaning solution to the cleaning tank body;
the spraying and cleaning mechanism is used for spraying cleaning solution to the silicon wafer in the cleaning tank body and cleaning the silicon wafer in the cleaning tank body.
Preferably, the cleaning tank body comprises an outer tank body and an inner tank body arranged at the bottom of the inner part of the outer tank body, a silicon wafer placing basket which is horizontally distributed is arranged in the inner tank body, and a silicon wafer to be cleaned is placed on the silicon wafer placing basket;
the vertical height of the inner tank body is lower than that of the outer tank body.
Preferably, the liquid circulation mechanism comprises a circulation pump, an outer tank liquid outlet pipe connected with the input end of the circulation pump, and an inner tank liquid inlet pipe connected with the output end of the circulation pump;
the outer trough liquid outlet pipe is connected with the lower part of one side of the outer trough body and is communicated with the inside of the outer trough body;
the inner groove liquid inlet pipe is connected with the middle part of the bottom of the inner groove body and is communicated with the inside of the inner groove body.
Preferably, a gas-liquid mixer is arranged on the outer tank liquid outlet pipe, an ozone inlet pipe is arranged on the gas-liquid mixer, and the gas-liquid mixer is communicated with the outer tank liquid outlet pipe;
the gas-liquid mixer is used for mixing and dissolving the ozone entering from the ozone inlet pipe and the cleaning solution entering from the outer tank liquid outlet pipe, and then the cleaning solution mixed and dissolved with the ozone is conveyed into the circulating pump through the outer tank liquid outlet pipe.
Preferably, a porous flow equalizing plate is horizontally arranged in the inner tank body, and the porous flow equalizing plate is arranged above the inner tank liquid inlet pipe and parallel to the lower part of the silicon wafer placing basket.
Preferably, the jet cleaning mechanism comprises a booster water pump, a jet pipeline connected with the booster water pump and a nozzle connected with the jet pipeline, the nozzle is arranged inside the inner tank body, and the booster water pump is provided with a solution inlet;
the pressurizing water pump pressurizes the solution entering the solution inlet, and the pressurized solution is conveyed to the nozzle through the spraying pipeline and sprayed to the silicon wafer in the inner groove body through the nozzle to be cleaned.
Preferably, the number of the nozzles is multiple, the nozzles are arranged between the porous flow equalizing plate and the silicon wafer placing basket at equal intervals, and the spraying direction of the nozzles is parallel to the placing direction of the silicon wafers.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the cleaning solution b is injected into the jet cleaning mechanism, and the jetted cleaning solution b and the cleaning solution a in the tank are continuously mixed to continuously generate high-concentration hydroxyl, so that the hydroxyl concentration on the surface of the silicon wafer can be maintained. The nozzle is arranged at a position close to the silicon wafer, the two solutions react on the surface of the silicon wafer, and hydroxyl generated by the reaction can directly react with organic matters on the surface of the silicon wafer, so that the loss of high-concentration hydroxyl in the conveying process is reduced. By the measures, the problem that the hydroxyl is difficult to play a role due to extremely short half-life period in ozone cleaning is solved, and the cleaning efficiency and stability of ozone cleaning are improved by utilizing the characteristic that the hydroxyl and organic matters have high reaction rate and no selectivity;
2. by injecting HF solution into the jet cleaning mechanism, the jetted HF solution can corrode a silicon oxide layer generated by oxidation of ozone on a silicon wafer, micro-etching is carried out on the surface of the silicon wafer, so that pollutants adsorbed on the surface of the silicon wafer are separated from the silicon wafer, adsorbed impurities are removed, and the loss of HF in the conveying process is reduced as the nozzle is arranged at a position close to the silicon wafer;
3. according to the invention, the silicon wafer is immersed in high-concentration ozone water as a cleaning background solution, the ozone can obtain higher ozone concentration in an acidic environment, and the ozone can effectively clean metal pollution and part of organic matters in the acidic environment, so that the cleaning effect is further improved;
4. according to the invention, different cleaning liquid medicines are introduced into the ozone water, and the cleaning process is continuously and circularly carried out in the inner tank body by utilizing the synergistic effect of the ozone solution and the different cleaning liquid medicines, and the circular cleaning of decomposition, etching and decomposition is continuously carried out, so that the stable and efficient cleaning is realized.
Drawings
FIG. 1 is a schematic perspective view of the present invention;
FIG. 2 is a schematic perspective view of the present invention;
FIG. 3 is a front sectional structural view of the present invention;
FIG. 4 is a schematic perspective view of the jet cleaning mechanism of the present invention;
FIG. 5 is a side cross-sectional structural view of the present invention;
FIG. 6 is a schematic view of a silicon wafer cleaning process according to the present invention;
fig. 7 is a comparison between before and after the cleaning solution b sprayed from the nozzle 13 of the present invention reacts with the cleaning solution a.
In the figure: 1. an inner tank body; 2. a silicon wafer placing basket; 3. an outer tank body; 4. an injection duct; 5. a silicon wafer; 6. A booster water pump; 7. an ozone inlet pipe; 8. a gas-liquid mixer; 9. an outer trough outlet pipe; 10. an inner groove liquid inlet pipe; 11. a porous flow equalizing plate; 12. a circulation pump; 13. a nozzle; 14. and (6) solution inlet.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-6, the method for cleaning a silicon wafer with ozone according to the present invention comprises the following steps:
A. firstly, preparing a solution a in an inner tank body 1, then, loading a silicon wafer 5 into a silicon wafer placing basket 2, and then, immersing the silicon wafer placing basket 2 loaded with the silicon wafer 5 into the inner tank body 1 loaded with a cleaning solution a for 10-40s;
the cleaning solution a is a solution comprising ozone and HCL;
wherein, the concentration of ozone is 10-100ppm, and the concentration of HCL is 0.1-1%;
according to the invention, the silicon wafer 5 is immersed in high-concentration ozone water with pH of 3-6 to serve as a cleaning background solution, the ozone can obtain higher ozone concentration in an acidic environment, and the ozone can effectively clean metal pollution and partial organic matters in the acidic environment, so that the cleaning effect is further improved;
B. then, pure water is conveyed to a booster water pump 6 through a solution inlet 14 to be pressurized, then is pressed into the spraying pipeline 4 through the booster water pump 6, and is sprayed out from a nozzle 13 at a high speed, and the injection time of the pure water lasts for 5-20s and is used for cleaning a spraying and cleaning mechanism;
C. then the cleaning solution b is injected into a booster water pump 6 through a solution inlet 14 to be pressurized, then the booster water pump 6 is pressed into the injection pipeline 4, and then the cleaning solution b and the cleaning solution a are injected out at a high speed from a nozzle 13, and the injected cleaning solution b and the cleaning solution a form a local vortex due to pressure difference so that the cleaning solution b and the cleaning solution a are fully mixed and react to generate high-concentration hydroxyl;
the cleaning solution b is KOH solution with the concentration of 0.05 to 0.2 percent, H2O2 solution with the concentration of 1 to 10 percent or H2O2 alkaline solution with the concentration of 1 to 10 percent;
the cleaning solution b is alkaline solution with the pH value of 7-13;
the injection speed of the cleaning solution b is 0.5m/s-5m/s, and can be a constant flow speed, or the flow speed is changed in the injection process or the cleaning solution b is injected in a pulse injection mode;
as shown in fig. 7, in the invention, the cleaning solution b is injected into the spray cleaning mechanism, the sprayed cleaning solution b and the cleaning solution a are fully mixed to generate high-concentration hydroxyl, the nozzle 13 is arranged at a position close to the silicon wafer 5, and can directly react with organic matters on the silicon wafer 5, so that the loss of the high-concentration hydroxyl in the conveying process is reduced, the problems of extremely short half-life period and low utilization rate of the high-concentration hydroxyl are solved, organic pollutants on the silicon wafer 5 can be effectively cleaned and removed, and the cleaning efficiency is improved;
D. then, the pure water is conveyed to a booster water pump 6 through a solution inlet 14 to be pressurized, then is pressed into the spraying pipeline 4 through the booster water pump 6, and is sprayed out from a nozzle 13 at a high speed, and the injection time of the pure water lasts for 5-20s and is used for cleaning a spraying and cleaning mechanism;
E. then, injecting the cleaning solution c into a booster water pump 6 for pressurization, then pressing the cleaning solution c into the injection pipeline 4 by the booster water pump 6, and then injecting the cleaning solution c out from the nozzle 13 at a high speed, wherein the injection time of the cleaning solution c lasts for 5-20s;
the cleaning solution c is an HF solution;
wherein the concentration of the HF solution is 0.05-0.2%;
by injecting the HF solution into the jet cleaning mechanism, the jetted HF solution can corrode a silicon oxide layer generated by ozone oxidation on the silicon wafer 5, micro-etching is carried out on the surface of the silicon wafer 5, pollutants adsorbed on the surface of the silicon wafer 5 are separated from the silicon wafer, adsorbed impurities are removed, and the nozzle 13 is arranged at a position close to the silicon wafer 5, so that the loss of HF in the conveying process is reduced.
F. Repeating the steps B-E for 1 to N times, wherein N is more than or equal to 2, the silicon wafer 5 is cleaned, taking the silicon wafer placing basket 2 out of the inner groove body 1, and then taking the silicon wafer 5 out of the silicon wafer placing basket 2;
according to the invention, different cleaning liquid medicines are introduced into the ozone water, and the cleaning process is continuously and circularly carried out in the inner tank body 1 and the carving-decomposing circular cleaning is continuously carried out by utilizing the synergistic effect of the ozone solution and the different cleaning liquid medicines, so that the stable and efficient cleaning is realized;
G. finally, the pure water is conveyed to the booster water pump 6 through the solution inlet 14 to be pressurized, then is pressed into the spraying pipeline 4 by the booster water pump 6 and is sprayed out from the nozzle 13 at a high speed, and the injection time of the pure water lasts for 5-20s and is used for cleaning the spraying and cleaning mechanism.
The following table is a comparison table of silicon wafer performance parameters using the ozone cleaning method of the invention and the traditional ozone cleaning method:
the silicon wafers for comparison in the following table are p-type silicon wafers with the same batch size of 182 × 182, and are divided into two groups, wherein one group is the silicon wafer using the ozone cleaning method, the other group is the silicon wafer using the traditional ozone cleaning method, and after cleaning is finished, the silicon wafers are installed on solar cells for performance test;
as can be seen from the comparison table, the efficiency of the solar cell prepared by using the silicon wafer cleaned by the ozone cleaning method is 0.15 percent higher than that of the solar cell prepared by using the silicon wafer cleaned by the traditional ozone cleaning method, wherein the open-circuit voltage is higher than 3mv, and the higher the open-circuit voltage is, the less recombination caused by surface pollution is shown, so the silicon wafer cleaned by using the ozone cleaning method of the invention has better cleaning effect than that of the traditional method.
As shown in fig. 1-5, the ozone cleaning device for silicon wafers provided by the invention comprises a cleaning tank body, wherein the cleaning tank body comprises an outer tank body 3 and an inner tank body 1 arranged at the bottom inside the outer tank body 3, a silicon wafer placing basket 2 which is horizontally distributed is arranged inside the inner tank body 1, a silicon wafer 5 which needs to be cleaned is placed on the silicon wafer placing basket 2, the vertical height of the inner tank body 1 is lower than that of the outer tank body 3, and a jet cleaning mechanism and a liquid circulation mechanism are arranged on the cleaning tank body;
the liquid circulation mechanism is used for circulating the cleaning solution in the cleaning tank body, enabling the cleaning solution to be circulated between the cleaning tank body and the liquid circulation mechanism in a reciprocating mode, dissolving ozone gas in the cleaning solution, and enabling the ozone gas to be circulated into the cleaning tank body through the cleaning solution;
the liquid circulation mechanism comprises a circulation pump 12, an outer tank liquid outlet pipe 9 connected with the input end of the circulation pump 12 and an inner tank liquid inlet pipe 10 connected with the output end of the circulation pump 12, the outer tank liquid outlet pipe 9 is connected with the lower part of one side of the outer tank body 3 and is communicated with the inside of the outer tank body 3, the inner tank liquid inlet pipe 10 is connected with the middle part of the bottom of the inner tank body 1 and is communicated with the inside of the inner tank body 1, a gas-liquid mixer 8 is arranged on the outer tank liquid outlet pipe 9, an ozone mixer inlet pipe 7 is arranged on the gas-liquid mixer 8, the gas-liquid mixer 8 is communicated with the outer tank liquid outlet pipe 9, the gas-liquid mixer 8 is used for mixing and dissolving ozone entering from the ozone inlet pipe 7 and cleaning solution entering from the outer tank liquid outlet pipe 9, then the cleaning solution mixed and dissolved with the ozone is conveyed into the circulation pump 12 through the outer tank liquid outlet pipe 9, a horizontally distributed porous flow equalizing plate 11 is arranged inside the inner tank body 1, and the porous flow equalizing plate 11 is arranged above the inner tank liquid inlet pipe 10 and is parallel to the lower part of the silicon chip placing basket 2;
the spraying and cleaning mechanism is used for spraying cleaning solution to the silicon wafer 5 in the cleaning tank body and cleaning the silicon wafer 5 in the cleaning tank body;
the jet cleaning mechanism comprises a booster water pump 6, a jet pipeline 4 connected with the booster water pump 6 and a nozzle 13 connected with the jet pipeline 4, the nozzle 13 is arranged inside the inner tank body 1, the booster water pump 6 is provided with a solution inlet 14, the booster water pump 6 pressurizes the solution entering from the solution inlet 14 and then conveys the solution to the nozzle 13 through the jet pipeline 4, the solution is jetted to the silicon wafer 5 in the inner tank body 1 by the nozzle 13 for cleaning, the number of the nozzles 13 is multiple, the nozzles 13 are arranged between the porous flow equalizing plate 11 and the silicon wafer placing basket 2 at equal intervals, and the jet direction of the nozzle 13 is parallel to the placing direction of the silicon wafer 5;
when the ozone cleaning device for the silicon wafer is used, the silicon wafer 5 is placed in a silicon wafer placing basket 2 and then is immersed in an inner groove body 1 containing cleaning solution, ozone is injected into a gas-liquid mixer 8 through an ozone inlet pipe 7, the gas-liquid mixer 8 mixes and dissolves the ozone entering from the ozone inlet pipe 7 and the cleaning solution entering from an outer groove liquid outlet pipe 9, the cleaning solution mixed and dissolved with the ozone is conveyed into a circulating pump 12 through the outer groove liquid outlet pipe 9, the circulating pump 12 circulates the cleaning solution dissolved with the ozone into the inner groove body 1, the cleaning solution dissolved with the ozone is uniformly conveyed to the silicon wafer 5 through a porous flow equalizing plate 11, the cleaning solution is injected into a booster water pump 6 from a solution inlet 14 at the moment, the solution entering from the solution inlet 14 is pressurized by the booster water pump 6 and then is conveyed to a nozzle 13 through an injection pipeline 4, and then is injected to the silicon wafer 5 in the inner groove body 1 through the nozzle 13 for cleaning.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. The method for cleaning the silicon wafer by using the ozone is characterized by comprising the following steps of:
A. firstly, preparing a cleaning solution a in an inner tank body (1), then, loading a silicon wafer (5) into a silicon wafer placing basket (2), and then, immersing the silicon wafer placing basket (2) loaded with the silicon wafer (5) into the inner tank body (1) loaded with the cleaning solution a for 10-40s;
B. then, pure water is conveyed to a booster water pump (6) through a solution inlet (14) to be pressurized, then is pressed into a spraying pipeline (4) through the booster water pump (6), and is sprayed out from a nozzle (13) at a high speed, and the injection time of the pure water lasts for 5-20s and is used for cleaning a spraying and cleaning mechanism;
C. then the cleaning solution b is injected into a booster water pump (6) through a solution inlet (14) for pressurization, then the booster water pump (6) presses the cleaning solution b into a spraying pipeline (4), and the cleaning solution b and the cleaning solution a are sprayed out at a high speed from a nozzle (13), and the sprayed cleaning solution b and the sprayed cleaning solution a form a local vortex due to pressure difference so that the cleaning solution b and the cleaning solution a are fully mixed and react to generate high-concentration hydroxyl;
D. then, the pure water is conveyed to a booster water pump (6) through a solution inlet (14) to be pressurized, then is pressed into a spraying pipeline (4) through the booster water pump (6), and is sprayed out from a nozzle (13) at a high speed, and the injection time of the pure water lasts for 5-20s and is used for cleaning a spraying and cleaning mechanism;
E. then, injecting the cleaning solution c into a booster water pump (6) for pressurization, then pressing the cleaning solution c into a spraying pipeline (4) by the booster water pump (6), and spraying the cleaning solution c out from a nozzle (13) at a high speed, wherein the injection time of the cleaning solution c lasts for 5-20s;
F. repeating the step B-E for 1 to N times, wherein N is more than or equal to 2, the silicon wafer (5) is cleaned, taking the silicon wafer placing basket (2) out of the inner groove body (1), and then taking the silicon wafer (5) out of the silicon wafer placing basket (2);
G. and finally, conveying the pure water to a booster water pump (6) through a solution inlet (14) for pressurization, then pressing the pure water into the spraying pipeline (4) through the booster water pump (6), and spraying the pure water out from the nozzle (13) at a high speed, wherein the injection time of the pure water lasts for 5-20s and is used for cleaning the spraying and cleaning mechanism.
2. The method for cleaning the silicon wafer by using the ozone as claimed in claim 1, wherein the method comprises the following steps: the cleaning solution a is a solution comprising ozone and HCL;
wherein, the concentration of ozone is 10-100ppm, and the concentration of HCL is 0.1% -1%;
the cleaning solution b is KOH solution with the concentration of 0.05 to 0.2 percent, H2O2 solution with the concentration of 1 to 10 percent or H2O2 alkaline solution with the concentration of 1 to 10 percent;
the cleaning solution b is alkaline solution with the pH value of 7-13;
the cleaning solution c is HF solution;
wherein the concentration of the HF solution is 0.05-0.2%.
3. The method for cleaning the silicon wafer by using the ozone as claimed in claim 1, wherein the method comprises the following steps: in step C, the injection speed of the cleaning solution b is 0.5m/s-5m/s.
4. The ozone cleaning device for the silicon wafer is characterized by comprising a cleaning tank body, wherein a jet cleaning mechanism and a liquid circulation mechanism are arranged on the cleaning tank body;
the liquid circulation mechanism is used for circulating the cleaning solution in the cleaning tank body, circulating the cleaning solution between the cleaning tank body and the liquid circulation mechanism in a reciprocating mode, dissolving ozone gas in the cleaning solution, and circulating the ozone gas into the cleaning tank body from the cleaning solution;
the spraying and cleaning mechanism is used for spraying cleaning solution to the silicon wafer (5) in the cleaning tank body and cleaning the silicon wafer (5) in the cleaning tank body.
5. The ozone cleaning device for the silicon wafer as set forth in claim 4, wherein: the cleaning tank body comprises an outer tank body (3) and an inner tank body (1) arranged at the bottom inside the outer tank body (3), a silicon wafer placing basket (2) is horizontally distributed inside the inner tank body (1), and a silicon wafer (5) to be cleaned is placed on the silicon wafer placing basket (2);
the vertical height of the inner tank body (1) is lower than that of the outer tank body (3).
6. The ozone cleaning device for the silicon wafer as set forth in claim 5, wherein: the liquid circulation mechanism comprises a circulating pump (12), an outer tank liquid outlet pipe (9) connected with the input end of the circulating pump (12) and an inner tank liquid inlet pipe (10) connected with the output end of the circulating pump (12);
the outer trough liquid outlet pipe (9) is connected with the lower part of one side of the outer trough body (3) and is communicated with the inside of the outer trough body (3);
the inner groove liquid inlet pipe (10) is connected with the middle part of the bottom of the inner groove body (1) and is communicated with the inside of the inner groove body (1).
7. The ozone cleaning device for the silicon wafer as claimed in claim 6, wherein: a gas-liquid mixer (8) is arranged on the outer tank liquid outlet pipe (9), an ozone inlet pipe (7) is arranged on the gas-liquid mixer (8), and the gas-liquid mixer (8) is communicated with the outer tank liquid outlet pipe (9);
the gas-liquid mixer (8) is used for mixing and dissolving the ozone entering from the ozone inlet pipe (7) and the cleaning solution entering from the outer tank liquid outlet pipe (9), and then conveying the cleaning solution mixed and dissolved with the ozone into the circulating pump (12) through the outer tank liquid outlet pipe (9).
8. The ozone cleaning device for the silicon wafer as set forth in claim 6, wherein: the silicon wafer placing basket is characterized in that a porous flow equalizing plate (11) is horizontally distributed in the inner groove body (1), and the porous flow equalizing plate (11) is arranged above the inner groove liquid inlet pipe (10) and parallel to the lower portion of the silicon wafer placing basket (2).
9. The ozone cleaning device for the silicon wafer according to claim 4, wherein: the jet cleaning mechanism comprises a booster water pump (6), a jet pipeline (4) connected with the booster water pump (6) and a nozzle (13) connected with the jet pipeline (4), the nozzle (13) is arranged in the inner tank body (1), and a solution inlet (14) is formed in the booster water pump (6);
the pressurizing water pump (6) pressurizes the solution entering from the solution inlet (14), then the solution is conveyed to the nozzle (13) through the spraying pipeline (4), and then the solution is sprayed to the silicon wafer (5) in the inner tank body (1) through the nozzle (13) to be cleaned.
10. The ozone cleaning device for the silicon wafer as claimed in claim 9, wherein: the silicon wafer placing device is characterized in that a plurality of nozzles (13) are arranged, the nozzles (13) are arranged between the porous flow equalizing plate (11) and the silicon wafer placing basket (2) at equal intervals, and the spraying direction of the nozzles (13) is parallel to the placing direction of the silicon wafers (5).
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