CN115478248A - Laminated solar cell absorbing layer material SrZrS 3 Film and method for producing same - Google Patents
Laminated solar cell absorbing layer material SrZrS 3 Film and method for producing same Download PDFInfo
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- CN115478248A CN115478248A CN202211141515.4A CN202211141515A CN115478248A CN 115478248 A CN115478248 A CN 115478248A CN 202211141515 A CN202211141515 A CN 202211141515A CN 115478248 A CN115478248 A CN 115478248A
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- 239000000463 material Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000010408 film Substances 0.000 claims abstract description 68
- 238000002360 preparation method Methods 0.000 claims abstract description 23
- 239000002243 precursor Substances 0.000 claims abstract description 17
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000013077 target material Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 4
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 10
- 238000001953 recrystallisation Methods 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 238000005245 sintering Methods 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 13
- 239000012467 final product Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000013112 stability test Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000005273 aeration Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 1
- 231100000701 toxic element Toxicity 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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Abstract
The invention discloses a laminated solar cell absorbing layer material SrZrS 3 A film and a preparation method thereof relate to the field of solar film materials. The preparation method comprises the following steps: preparation of SrZrS 3 Powdered and compacted into SrZrS 3 A target material; srZrS 3 Putting the target material into a magnetron sputtering cavity for deposition to obtain a precursor film; recrystallizing the precursor film to obtain the final product SrZrS 3 A film. SrZrS prepared by adopting method 3 The thin film forbidden band width is suitable for being used as an absorption layer material of a top cell in a laminated solar cell. Its absorption coefficient is greater than 10 5 cm ‑1 And the good sunlight absorption performance is shown. Further, srZrS 3 The film also has excellent thermal stability and good film forming quality,the method has certain guiding significance for the preparation of the perovskite structure solar cell thin film material.
Description
Technical Field
The invention belongs to the field of preparation of laminated solar cell thin film materials, and particularly relates to an absorbing layer material SrZrS of a top cell 3 A film and a method for preparing the same.
Background
The thin film solar cell plays an important role in utilizing and cleaning solar energy resources, but according to Shockley-Queisser limit, the limiting efficiency of the single junction solar cell is 33.7%, which becomes a bottleneck limiting further improvement of the solar cell efficiency. Through an innovative structural design, a high-efficiency bottom battery and a wide-bandgap top battery are superposed together in a series connection mode to obtain a laminated solar battery, and the strategy can expand the spectral absorption range of the solar battery, so that the utilization rate of sunlight and the photoelectric conversion efficiency of the battery are improved, and the laminated solar battery attracts wide attention of researchers.
Sulfide perovskite SrZrS 3 The material is an ideal top battery absorption layer material, and has the advantages of good moisture/heat stability, high light absorption coefficient, proper forbidden band width, high carrier mobility, environment-friendly constituent elements, high earth crust abundance and the like. However, the preparation method of the target and the growth of the thin film often require complex conditions due to the intrinsic material characteristics such as the self-reinforced chemical bond of sulfide perovskite, and a simple method capable of directly preparing SrZrS is still lacking at present 3 Thin films, are a key problem that researchers in this field are working on.
Disclosure of Invention
In view of the defects of the prior art, the invention discloses an absorbing layer material SrZrS of a top battery 3 Film and process for producing the same, directly using SrZrS 3 Target material magnetron sputtering film formation and recrystallization treatment are carried out to improve crystallization performance, and the obtained SrZrS 3 The film has the excellent characteristics of good stability, higher absorption coefficient, flat and uniform surface appearance, suitability for being used as the optical forbidden band width of a top battery and the like, and the SrZrS 3 The preparation method of the film comprises the following steps:
s1: preparation of SrZrS 3 Powdered and pressed into SrZrS 3 A target material;
s2: base ofIn SrZrS 3 Depositing the target material by magnetron sputtering to obtain a precursor film;
s3: recrystallizing the precursor film to obtain SrZrS 3 A film;
compared with the prior art, the invention has the beneficial effects that:
firstly solved SrZrS 3 The preparation of the powder is difficult, and the batch production of SrZrS is realized by utilizing a tube furnace 3 Powder of SrZrS optimized 3 Powder preparation conditions; secondly solve SrZrS 3 The target material is difficult to compress, the standard target material with the diameter of 50.8mm is prepared by a tablet press and a tube furnace, and a foundation is laid for the growth of films by magnetron sputtering and other equipment; then carrying out recrystallization treatment in a reducing protective atmosphere to obtain SrZrS with good crystallinity, stability and proper optical band gap 3 A film; srZrS 3 The good stability of the film is derived from stronger chemical bonds among constituent atoms Sr-Zr-S, and the special perovskite structure ensures that the film has excellent sunlight absorption property and good current carrier transmission property, does not contain toxic elements such as lead and the like, and is environment-friendly, so the SrZrS provided by the invention 3 The thin film preparation method lays a material foundation for the thin film to be used as an absorption layer in a solar top cell.
Drawings
FIG. 1 shows SrZrS of the present invention 3 A flow chart of a film preparation method;
FIG. 2 shows SrZrS obtained in example 1 of the present invention 3 A thin film X-ray diffraction pattern, an X-ray diffraction pattern after a stability test at 400 ℃ in an environment of 50% to 70% humidity, and a standard powder diffraction reference pattern.
FIG. 3 shows SrZrS obtained in inventive example 1 3 Film scanning electron microscope topography.
FIG. 4 shows SrZrS obtained in example 1 of the present invention 3 The film contains Sr, zr and S elements according to expectation and does not contain other impurity elements.
FIG. 5 shows SrZrS obtained in example 1 of the present invention 3 The absorption coefficient of the film is larger than the forbidden band widthHas a high light absorption coefficient in the region of 2.0 eV.
FIG. 6 shows SrZrS obtained in example 1 of the present invention 3 The X-ray photoelectron spectrum of the film shows that the Sr, zr and S elements can be calibrated correctly, and the fine spectra of the three elements show that the chemical valence is +2, +4 and-2 respectively, which is in line with the expectation.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.
Example 1
Step S1, weighing 10g SrZrO 3 Putting the powder into a crucible, then sending the powder into a tube furnace, closing the tube furnace, closing an air inlet, pumping the tube furnace chamber to a background vacuum by using vacuum equipment such as a rotary vane type mechanical pump and the like, wherein the background vacuum is lower than 0.1Pa, then introducing carbon disulfide steam into the tube furnace through the air inlet until the working pressure is 30Pa, setting a temperature rise program to rise to the working temperature of 1000 ℃ at a temperature rise rate of 5 ℃/min, preserving the heat for 1h, then reducing the temperature of the tube furnace to the room temperature at a temperature reduction rate of 5 ℃/min, and taking out the powder after aeration, namely SrZrS 3 Powder of the chemical reaction formula 2SrZrO 3 +3CS 2 ＝2SrZrS 3 +3CO 2 (ii) a Using a tablet press to process the SrZrS 3 The powder was tabletted using a die with a diameter of 60mm, thus obtaining a disc with a diameter of 60mm, and the obtained tablet was again sintered in a tube furnace for 1h under conditions and SrZrS except that the working temperature was changed to 1300 deg.C 3 The preparation process of the powder is the same, the powder is taken out after being cooled to room temperature, the obtained wafer is polished to reduce the diameter to 50.8mm, the polished wafer is bonded to a copper back plate by indium, and SrZrS with the diameter of 50.8mm can be obtained in the step 3 A target material;
step S2, srZrS obtained in step S1 3 Putting the target material into a magnetron sputtering system, vacuumizing to a background vacuum, wherein the background vacuum is lower than 0.001Pa, introducing argon with the flow of 20SCCM through an air inlet system, adjusting a high valve to enable the internal air pressure of the magnetron sputtering system to reach the working air pressure of 1Pa, performing sputtering deposition on a quartz substrate, setting the temperature of the substrate to be 500 ℃, stopping sputtering after 2-hour deposition, cooling the temperature of the system to room temperature, and taking out the obtained precursor film;
s3, putting the precursor film obtained in the step S2 into a tube furnace for recrystallization treatment, closing the tube furnace, closing an air inlet, pumping a tube furnace chamber by using a rotary-vane mechanical pump and the like until the background vacuum is lower than 0.1Pa, introducing reducing gas carbon disulfide into the tube furnace through the air inlet until the working pressure is 30Pa to form a reducing protective gas atmosphere to avoid oxidation of the precursor film, setting a heating program to raise the temperature to 1000 ℃ at a heating rate of 5 ℃/min, preserving the temperature for 1h, then lowering the tube furnace to room temperature at a cooling rate of 5 ℃/min, and taking out the film after inflation, namely SrZrS 3 A film.
FIG. 1 is a flow chart of a preparation process of example 1 of the present invention;
FIG. 2 shows SrZrS obtained in example 1 of the present invention 3 The X-ray diffraction pattern of the film after being subjected to the stability test at 400 ℃ in the environment with 50-70% of humidity and the standard powder diffraction reference pattern show that the SrZrS is prepared no matter 3 The film is also SrZrS after being subjected to a damp-heat stability test 3 The main diffraction peak and the peak intensity of the film are not obviously changed, the crystal structure of the film is not changed, and SrZrS 3 The good stability of the material is mainly caused by that the constituent atoms of the material have strong chemical bonds and are not easy to react with oxygen and water vapor in the environment;
FIG. 3 shows SrZrS obtained in example 1 of the present invention 3 The film is scanned by an electron microscope topography, and the SrZrS is obtained by forming a compact film by means of magnetron sputtering and further utilizing a high-temperature recrystallization method 3 The film has uniform and flat surface appearance;
FIG. 4 shows SrZrS obtained in example 1 of the present invention 3 The thin film energy dispersion X-ray diagram (EDS) only contains Sr, zr and S except Si and O, accords with the expectation and does not contain other impurity elements, and shows that the preparation process can avoid introducing other impurities by virtue of lower background vacuum, thereby being beneficial to obtaining high-purity SrZrS 3 A film;
FIG. 5 shows SrZrS obtained in example 1 of the present invention 3 Absorptance profile of the film. When the absorption rate is larger than 2.0eV, the absorption rate is greatly increased, and the fact that the forbidden bandwidth is near 2.0eV is proved. The thickness of the film can be estimated from the data of 100nm or the like>The absorption coefficient in the 2.0eV region can reach 10 5 cm -1 Prove that the SrZrS prepared by the invention 3 The film has good absorption performance aiming at the middle and short wave parts of the solar spectrum, and is suitable for preparing a high-efficiency solar cell.
FIG. 6 shows SrZrS obtained in example 1 of the present invention 3 The X-ray photoelectron spectrum of the film shows that the Sr, zr and S elements can be calibrated correctly, the fine spectrum peak position and peak intensity of the three elements meet the standard, and the chemical valence of the three elements is respectively +2, +4 and-2, which meets the expectation.
Table 1 shows SrZrS obtained in inventive example 1 3 The Hall test result of the film shows that the resistivity of the film is in a semiconductor region, the film presents n-type conductivity, the carrier concentration is moderate, and the mobility is up to 217cm 2 ·v -1 ·s -1 The method is suitable for rapid separation of photon-generated carriers, and is beneficial to realizing high-efficiency photovoltaic cells.
Example 2
Step S1, the same as step S1 in example 1;
step S2, the same as step S2 in embodiment 1;
s3, putting the precursor film obtained in the step S2 into a tube furnace for recrystallization, closing the tube furnace, closing an air inlet, and using a rotary-vane machinePumping a tube furnace chamber by a pump and the like to a background vacuum which is lower than 0.1Pa, introducing reducing gas hydrogen sulfide into the tube furnace through an air inlet to a working pressure of 30Pa so as to form a reducing protective gas atmosphere to avoid oxidation of a precursor film, setting a heating program to raise the temperature to 1000 ℃ at a heating rate of 5 ℃/min, keeping the temperature for 1h, lowering the tube furnace to room temperature at a cooling rate of 5 ℃/min, and taking out the inflated film, namely SrZrS 3 The film, here step S3, was performed under the same conditions as step S3 in example 1, except that the reducing gas was replaced with hydrogen sulfide from carbon disulfide.
Example 3
Step S1, the same as step S1 in embodiment 1;
step S2, the same as step S2 in embodiment 1;
s3, putting the precursor film obtained in the step S2 into a tube furnace for recrystallization treatment, closing the tube furnace, closing an air inlet, pumping a tube furnace chamber by using a rotary-vane mechanical pump and the like until the background vacuum is lower than 0.1Pa, introducing reducing gas carbon disulfide into the tube furnace through the air inlet until the working pressure is 30Pa to form a reducing protective gas atmosphere to avoid oxidation of the precursor film, setting a heating program to raise the temperature to 1100 ℃ at a heating rate of 5 ℃/min, keeping the temperature for 1h, then lowering the tube furnace to room temperature at a cooling rate of 5 ℃/min, and taking out the film after inflation, namely SrZrS 3 The film, here step S3, was identical to step S3 of example 1 except that the operating temperature was changed to 1100 ℃.
Claims (9)
1. Laminated solar cell absorbing layer material SrZrS 3 The preparation method of the film is characterized by comprising the following steps: s1, preparation of SrZrS 3 Powdered and pressed into SrZrS 3 A target material; s2. Based on SrZrS 3 Depositing the target material by magnetron sputtering to obtain a precursor film; s3, recrystallizing the precursor film to obtain SrZrS 3 A film.
2. SrZrS as claimed in claim 1 3 Preparation of filmsThe preparation method is characterized in that SrZrS is prepared in the step S1 3 The powder method comprises the following steps: raw material SrZrO 3 Placing the powder in a crucible and in a tubular furnace, pumping the tubular furnace by using a mechanical pump until the background vacuum is lower than 0.1Pa, introducing carbon disulfide steam until the reaction pressure is 30Pa, heating the tubular furnace to 1000 ℃, preserving the temperature for 1h, and cooling to room temperature to obtain SrZrS 3 And (3) powder.
3. SrZrS as claimed in claim 1 3 The method for preparing the film is characterized in that SrZrS is prepared in the step S1 3 The target material method comprises the following steps: srZrS 3 Grinding the powder, pressing into 60 mm-diameter round piece with a tabletting mold, sintering at 1300 deg.C for 1 hr in a tube furnace, cooling to room temperature, taking out, polishing to obtain 50.8 mm-diameter round piece, and adhering to copper back plate to obtain SrZrS 3 A target material.
4. SrZrS as claimed in claim 1 3 The preparation method of the film is characterized in that the step of depositing the precursor film by magnetron sputtering in the step S2 comprises the following steps: srZrS prepared in the step S1 3 And placing the target material into a magnetron sputtering system, and carrying out magnetron sputtering deposition to obtain a precursor film.
5. The SrZrS of claim 4 3 The preparation method of the film is characterized in that SrZrS is adopted in the magnetron sputtering process 3 The power of the sputtering gun is 60W, the background vacuum of the magnetron sputtering system is lower than 0.001Pa, the inner substrate of the magnetron sputtering system is a quartz substrate, the temperature of the substrate is 500 ℃, the sputtering pressure is 1Pa, the sputtering flow is 20SCCM, and the sputtering time is 2h.
6. The SrZrS of claim 1 3 The preparation method of the film is characterized in that the recrystallization process in the step S3 is as follows: placing the precursor film obtained in the step S2 in a tubular furnace, pumping the precursor film to the background vacuum of less than 0.1Pa by using a mechanical pump, introducing reducing gas to 30Pa to avoid oxidation, and heating the tubular furnace to the recrystallization temperatureKeeping the temperature for 1h, wherein the recrystallization temperature is 1000-1100 ℃, and then cooling to room temperature to obtain SrZrS 3 A film.
7. The recrystallization process in step S3 according to claim 6, wherein the reducing gas is carbon disulfide or hydrogen sulfide gas.
8. SrZrS 3 The film is characterized in that SrZrS 3 A film produced by the production method according to any one of claims 1 to 7.
9. SrZrS as claimed in claim 8 3 Use of a thin film in a top cell device of a tandem solar cell.
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| CN110010724A (en) * | 2019-04-03 | 2019-07-12 | 西安交通大学 | One kind preparing BaZrS on the metallic substrate3The method of solar battery film material |
| CN113193073A (en) * | 2021-03-18 | 2021-07-30 | 西安交通大学 | BaZrS3Preparation method of solar cell thin film material |
| CN114086126A (en) * | 2021-11-09 | 2022-02-25 | 电子科技大学长三角研究院(湖州) | Single crystal solar cell thin film material and preparation method thereof |
| CN114873639A (en) * | 2022-03-30 | 2022-08-09 | 郑州大学 | Ba 3 Zr 2 S 7 Film, preparation method and application thereof |
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Patent Citations (7)
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|---|---|---|---|---|
| US3940472A (en) * | 1974-05-22 | 1976-02-24 | E. I. Du Pont De Nemours And Company | Quaternary sulfides and selenides containing Ba or Sr and selected transition metals |
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