CN112951929B - Solar cell electrode, preparation method thereof and solar cell - Google Patents
Solar cell electrode, preparation method thereof and solar cell Download PDFInfo
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- CN112951929B CN112951929B CN202110097502.0A CN202110097502A CN112951929B CN 112951929 B CN112951929 B CN 112951929B CN 202110097502 A CN202110097502 A CN 202110097502A CN 112951929 B CN112951929 B CN 112951929B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000000243 solution Substances 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 239000000203 mixture Substances 0.000 claims abstract description 23
- 239000003960 organic solvent Substances 0.000 claims abstract description 10
- 239000011259 mixed solution Substances 0.000 claims abstract description 3
- 239000011575 calcium Substances 0.000 claims description 68
- 239000000843 powder Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 11
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 10
- 229910052791 calcium Inorganic materials 0.000 claims description 10
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 9
- 238000004108 freeze drying Methods 0.000 claims description 8
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical group COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 6
- 239000002033 PVDF binder Substances 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 3
- 239000003708 ampul Substances 0.000 claims description 3
- 239000011888 foil Substances 0.000 claims description 3
- 238000011068 loading method Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000009210 therapy by ultrasound Methods 0.000 claims description 3
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 238000000151 deposition Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The invention discloses a preparation method of a solar cell electrode, which comprises the following steps: applying Ca to the area of the silicon wafer where the electrode is to be formed 2 N two-dimensional material solution, and then solidifying to obtain the solar cell electrode; wherein, the Ca 2 The N two-dimensional material solution is Ca 2 A mixed solution of a N-dimensional material and an organic solvent, the Ca 2 N two-dimensional material composed of Ca 3 N 2 Is prepared by high-temperature treatment, or the Ca2N two-dimensional material is prepared from Ca 3 N 2 And the mixture of Ca is prepared by high-temperature treatment. Correspondingly, the invention also discloses a solar cell electrode and a solar cell. By implementing the invention, the shading area of the solar cell electrode can be reduced, and the conversion efficiency of the solar cell is improved.
Description
Technical Field
The invention relates to the technical field of crystalline silicon solar cells, in particular to a preparation method of a solar cell electrode, the solar cell electrode and a solar cell.
Background
The solar cell electrode mainly plays a role in collecting current, and the properties of the electrode material such as resistivity and the like have great influence on the extraction of the photo-generated electricity of the solar cell. Meanwhile, the light receiving surface of the solar cell is reduced because the electrode is printed on the light receiving surface; therefore, the solar cell electrode is one of the important factors determining the conversion efficiency of the solar cell.
Most of the existing electrode materials are silver electrode paste which is printed by a screen and sintered to obtain the electrode of the solar cell. However, its sintering temperature is high, which limits its application in some advanced batteries (such as HJT battery). The existing solutions generally have three types: one method is to reduce the sintering temperature of the silver paste, and the silver paste is prepared by adopting the processes of screen printing and sintering; the other method is to cover an electrode mould with electrode pattern grinding on a silicon wafer, and then vacuum evaporating copper metal to obtain an electrode; yet another approach is to selectively deposit copper electrodes on the cell sheets using a solution containing a salt of copper metal. The methods either have difficulty in effectively reducing the damage of the solar cell structure caused by burning, or have complex preparation process and higher cost. In addition, the electrodes are not transparent, the light receiving area of the surface of the solar cell can be reduced, and the conversion efficiency of the solar cell is reduced.
Disclosure of Invention
The invention aims to provide a preparation method of a solar cell electrode, which is low in preparation cost, and the prepared solar cell electrode is transparent, so that the conversion efficiency of a solar cell can be effectively improved.
The invention also provides a solar cell electrode.
The invention also provides a solar cell.
In order to solve the above technical problems, the present invention provides a method for preparing a solar cell electrode, comprising: applying Ca to the silicon wafer in the region where the electrode is to be formed 2 N two-dimensional material solution, and then solidifying to obtain the solar cell electrode;
wherein, the Ca 2 The N two-dimensional material solution is Ca 2 A mixed solution of an N two-dimensional material and an organic solvent;
the Ca 2 N two-dimensional material composed of Ca 3 N 2 Is obtained by high temperature treatment, or
The Ca2N two-dimensional material is composed of Ca 3 N 2 And the mixture of Ca is prepared by high-temperature treatment.
As an improvement of the above technical solution, the method comprises the following steps:
(1) Loading a mold onto a silicon wafer, wherein the mold comprises a sealing plate and a hollow-out area, and the hollow-out area corresponds to an area on the silicon wafer where an electrode is to be formed;
(2) Adding Ca 2 Injecting N two-dimensional material solution into the hollow area;
(3) And (3) freeze-drying the silicon wafer obtained in the step (2), and then removing the die to obtain a finished product of the solar cell electrode.
As an improvement of the technical scheme, the organic solvent is dimethyl carbonate or propylene carbonate, and the Ca is 2 Ca in N two-dimensional material solution 2 The concentration of N is 0.1-5 g/L.
As an improvement of the above technical solution, the Ca 2 The preparation method of the N two-dimensional material solution comprises the following steps:
(1) Adding Ca 3 N 2 The powder and the calcium powder are mixed according to the molar ratio of 1: (1-1.5) uniformly mixing to obtain a mixture;
(2) Pressing the mixture by adopting the pressure of 0.5-0.7 GPa;
(3) Packaging the pressed mixture in a vacuum container, and performing heat treatment to obtain Ca 2 N two-dimensional material;
(4) Adding Ca 2 Dispersing the N two-dimensional material into an organic solvent to obtain Ca 2 N two-dimensional material solution finished products;
wherein the heat treatment temperature is 1050-1200 ℃; the heat treatment time is 30-50 h.
As an improvement of the technical scheme, in the step (3), the pressed mixture is rolled into a molybdenum foil and placed into a vacuum ampoule, and then high-temperature treatment is carried out in a tube furnace.
As an improvement of the technical proposal, in the step (4), ca is added 2 N two-dimensional material and dimethyl carbonateMixing and carrying out ultrasonic treatment for 80-100 min to obtain Ca 2 And (5) obtaining a finished product of the N two-dimensional material solution.
As an improvement of the technical scheme, the die is made of polyvinylidene fluoride, polytetrafluoroethylene or ABS.
Correspondingly, the invention also discloses a solar cell electrode which is prepared by the preparation method of the solar cell electrode.
Correspondingly, the invention also discloses a solar cell, which comprises the solar cell electrode.
As an improvement of the above technical solution, the solar cell is an HJT cell.
The implementation of the invention has the following beneficial effects:
1. the preparation method of the solar cell electrode adopts Ca 2 Solidifying the N two-dimensional material solution to obtain the electrode due to Ca 2 The N two-dimensional material is transparent and does not shield the light receiving surface, so that the conversion efficiency of the solar cell is improved. While Ca 2 The N two-dimensional material has good conductivity, can effectively reduce the transmission loss of photo-generated electricity, and further improves the conversion efficiency.
2. The preparation method of the solar cell electrode is prepared by adopting a freeze drying process, has low operation temperature and cannot damage the electrode structure of the solar cell. Meanwhile, the whole process is simple, easy to operate, economic and environment-friendly, and suitable for large-scale production.
3. When the solar cell is applied to the HJT cell, the damage of high temperature to the amorphous silicon film can be effectively reduced, and meanwhile, because the strength requirement on the silicon wafer is low, a thinner silicon wafer can be adopted, the production cost is reduced, and the conversion efficiency of the HJT cell is improved.
Drawings
FIG. 1 is a flow chart of a method for fabricating an electrode of a solar cell in accordance with one embodiment of the present invention;
FIG. 2 is a top view of a mold in accordance with an embodiment of the present invention;
FIG. 3 is a front view of a mold in an embodiment of the invention.
Detailed Description
To make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
The invention provides a preparation method of a solar cell electrode, which comprises the following steps: applying Ca to the area of the silicon wafer where the electrode is to be formed 2 N two-dimensional material solution, and then solidifying to obtain the solar cell electrode;
specifically, referring to fig. 1, it includes:
s1: loading a mold onto a silicon wafer;
according to the type of the solar cell, a corresponding passivation film, a heterojunction film and/or an antireflection film can be formed on the surface of the silicon wafer, and then the mold is loaded on the corresponding film. Illustratively, when the solar cell is a PERC cell, siN should be formed on the front surface of the silicon wafer x Forming an anti-reflection film, and forming AlO on the back of the silicon wafer x Film, siO x Film and SiN x A film; when the solar cell is an HJT cell, an i-type amorphous silicon film, a p-type amorphous silicon film and a TCO film are formed on the front surface of a silicon wafer, and an i-type amorphous silicon film, an n-type amorphous silicon film and a TCO film are formed on the back surface of the silicon wafer.
Referring to fig. 2 and 3, the mold 1 includes a sealing plate 11 and a hollow area 12, wherein the hollow area 12 corresponds to an area on a silicon wafer where an electrode is to be formed. The height of the hollow-out area 12 is 0.5-2 mm, such as 0.5mm, 0.8mm, 1mm, 1.5mm, but not limited thereto. The width and length of the hollow-out region 12 may be determined according to the shape of the solar cell electrode, such as 20-200 μm for example, but not limited thereto.
Specifically, the shape of the mold 1 is the same as that of a silicon wafer, and the material thereof is polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), or ABS, but is not limited thereto. Preferably, the material is PVDF.
S2: adding Ca 2 Injecting N two-dimensional material solution into the hollowed-out area;
wherein, ca 2 N two-dimensional material can pass Ca 3 N 2 High-temperature treatment is carried out to obtain; can also be carried out by Ca 3 N 2 And calcium mixture through high temperature treatment. Preferably, ca is used 3 N 2 Ca preparation by using calcium powder as raw material 2 The method is high in conversion rate, the two-dimensional material is higher in stability, the laminated stacking structure is better, and the conversion efficiency of the solar cell is improved.
Specifically, ca 2 The preparation method of the N two-dimensional material solution comprises the following steps:
(1) Adding Ca 3 N 2 The powder and the calcium powder are mixed according to the molar ratio of 1: (1-1.5) uniformly mixing to obtain a mixture;
wherein, ca 3 N 2 The molar ratio to Ca was 1: (1-1.5), exemplary is 1:1,1:1.2,1:1.3, but is not limited thereto. Preferably, ca 3 N 2 The molar ratio to Ca was 1: (1-1.5), a small amount of Ca can be remained in the prepared product by controlling the small amount of excessive calcium powder, and further the Ca can be effectively prevented 2 And the stability of the N two-dimensional material is improved by hydrolysis of the N two-dimensional material. Ca 3 N 2 The particle size of the powder and the calcium powder is less than or equal to 50 mu m so as to realize the full mixing of the powder and the calcium powder and improve the Ca 2 Yield of N.
(2) Pressing the mixture by adopting the pressure of 0.5-0.7 GPa;
specifically, the mixture is pressed by a hydraulic press at a pressing pressure of 0.5 to 0.7GPa, illustratively 0.52GPa, 0.55GPa, 0.63GPa, 0.68GPa, but not limited thereto. Preferably, the pressing pressure is 0.55 to 0.6GPa.
(3) Packaging the pressed mixture in a vacuum container, and performing heat treatment to obtain Ca 2 N two-dimensional materials;
specifically, the pressed mixture is rolled into molybdenum foil, gold foil, platinum foil or niobium foil, and then placed into a vacuum ampoule; then carrying out high-temperature heat treatment in a tube furnace (under the protection of inert gas atmosphere), cooling to room temperature after heat treatment, and obtaining the block Ca 2 And (3) N material.
Wherein the heat treatment temperature is 1050-1200 ℃, and when the heat treatment temperature is less than 1050 ℃, the obtained Ca2N two-dimensional material has low purity and poor conductivity. Preferably, the heat treatment temperature is 1050 to 1120 ℃, and exemplary temperatures are 1080 ℃, 1100 ℃, 1110 ℃, but not limited thereto.
(4) Adding Ca 2 Dispersing the N two-dimensional material into an organic solvent to obtain Ca 2 N two-dimensional material solution finished products;
the organic solvent may be propylene carbonate, dimethyl carbonate, or toluene, but is not limited thereto. Preferably, the organic solvent is dimethyl carbonate, which has a high melting point and is environment-friendly.
Specifically, ca is added 2 Mixing the N two-dimensional material with dimethyl carbonate, and carrying out ultrasonic treatment for 80-100 min to obtain Ca 2 And (5) obtaining a finished product of the N two-dimensional material solution.
Specifically, ca 2 Ca in N two-dimensional material solution 2 The concentration of N is 0.1 to 5g/L, and exemplary concentrations are 0.2g/L, 0.5g/L, 1g/L, 1.5g/L, 2.2g/L, 3.5g/L, and 4.5g/L, but not limited thereto. Preferably, the concentration is 0.2 to 1g/L.
S3: and (3) freeze-drying the silicon wafer obtained in the step (S2), and then removing the die to obtain a finished product of the solar cell electrode.
Correspondingly, the invention also discloses a solar cell electrode which is prepared by adopting the preparation method.
Correspondingly, the invention also discloses a solar cell, which adopts the solar cell electrode. Specifically, the solar cell electrode of the present invention can be applied to various types of solar cells, such as PERC cells, IBC cells, HJT cells, and Topcon cells, but is not limited thereto. Preferably, the solar cell electrode is applied to the HJT cell, the thickness of the silicon wafer of the HJT cell can be effectively reduced, and due to the fact that the operating temperature is low, damage to the amorphous silicon film layer is reduced, and conversion efficiency is improved.
The invention is illustrated below by means of specific examples:
example 1Ca 2 Preparation of N two-dimensional Material solution
This example provides Ca 2 The preparation method of the N two-dimensional material solution specifically comprises the following steps:
(1) Mixing Ca 3 N 2 Powder (D99 =20 μm) and calcium powder (D99 =15 μm) in a molar ratio of 1:1.3, uniformly mixing to obtain a mixture;
(2) Compressing the mixture with a pressure of 0.56 GPa;
(3) Packaging the pressed mixture in platinum foil, and performing heat treatment at 1150 deg.C for 30h to obtain Ca 2 N two-dimensional material;
(4) Mixing 10mgCa 2 Dispersing the N two-dimensional material into 20mL of propylene carbonate to obtain Ca 2 And (5) obtaining a finished product of the N two-dimensional material solution.
Example 2
This example provides Ca 2 The preparation method of the N two-dimensional material solution specifically comprises the following steps:
(1) Adding Ca 3 N 2 Powder (D99 =20 μm) and calcium powder (D99 =15 μm) in a molar ratio of 0.8:1, uniformly mixing to obtain a mixture;
(2) Pressing the mixture with a pressure of 0.56 GPa;
(3) Packaging the pressed mixture in platinum foil, and performing heat treatment at 1150 ℃ for 30h to obtain Ca 2 N two-dimensional material;
(4) Adding 10mg of Ca 2 Dispersing the N two-dimensional material into 20mL dimethyl carbonate to obtain Ca 2 And (5) obtaining a finished product of the N two-dimensional material solution.
Example 3
This embodiment provides an HJT battery, which is prepared by the following steps:
(1) Providing an N-type monocrystalline silicon wafer and texturing;
(2) Depositing an intrinsic amorphous silicon layer and an n-type amorphous silicon layer on the front surface of the silicon wafer in sequence;
(3) Depositing an intrinsic amorphous silicon layer and a p-type amorphous silicon layer on the back of the silicon wafer in sequence;
(4) Depositing TCO layers on the front side and the back side of the silicon wafer;
(5) Preparing a front electrode, specifically, a mold (pvdf material, height 1mm,210mm × 210mm, width of hollow area 100 μm) for the front electrode was placed on the front TCO, and then Ca prepared in example 1 was added 2 N two-dimensional material solution; then freeze-drying at-25 deg.C, and finally removing the mould;
(6) Preparing the back electrode, in particular, first applying it to the backA mold for a surface electrode (of pvdf material, height 1mm, 210mm. Times.210 mm, width of the hollowed-out area 100 μm) was placed on the back TCO, and the Ca prepared in example 1 was then applied 2 N two-dimensional material solution; then freeze-drying at-25 deg.C, and finally removing the mould; thus obtaining the finished product of the HJT battery.
Example 4
This embodiment provides a HJT battery, which is prepared by the following steps:
(1) Providing an N-type monocrystalline silicon wafer and texturing;
(2) Depositing an intrinsic amorphous silicon layer and an n-type amorphous silicon layer on the front surface of the silicon wafer in sequence;
(3) Depositing an intrinsic amorphous silicon layer and a p-type amorphous silicon layer on the back of the silicon wafer in sequence;
(4) Depositing TCO layers on the front side and the back side of the silicon wafer;
(5) Preparing a front electrode, specifically, a mold (pvdf material, height 1mm,210mm × 210mm, width of hollow area 100 μm) for the front electrode was placed on the front TCO, and then Ca prepared in example 2 was added 2 N two-dimensional material solution; then freeze-drying at-25 deg.C, and finally removing the mould;
(6) A back electrode was prepared by placing a mold (pvdf material, height 1mm, 210mm. Times.210 mm, hollow area width 100 μm) for the back electrode on the back TCO, and then adding Ca prepared in example 2 2 N two-dimensional material solution; then freeze-drying at-25 deg.C, and removing the mold; thus obtaining the finished product of the HJT battery.
The HJT cells obtained from example 3 and example 4 were tested in conventional HJT cells (low temperature silver paste electrodes) with the following results:
| J sc (mA/cm 2 ) | V oc (mV) | FF/％ | Eff(％) | |
| conventional HJT battery | 41.6 | 710.6 | 82.4 | 24.4 |
| Example 3 | 42.3 | 718.3 | 83.6 | 25.2 |
| Example 4 | 42.4 | 720.5 | 83.2 | 25.5 |
The above table shows that the conversion efficiency of the HJT cell can be improved to more than 25.2% by the solar cell electrode prepared by the invention.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (9)
1. A method for preparing a solar cell electrode, comprising:
(1) Loading a mold onto a silicon wafer, wherein the mold comprises a sealing plate and a hollow-out area, and the hollow-out area corresponds to an area on the silicon wafer where an electrode is to be formed;
(2) Adding Ca 2 Injecting N two-dimensional material solution into the hollow area;
(3) Freeze-drying the silicon wafer obtained in the step (2), and then removing the die to obtain a finished product of the solar cell electrode;
wherein, the Ca 2 The N two-dimensional material solution is Ca 2 A mixed solution of an N two-dimensional material and an organic solvent;
the Ca 2 N two-dimensional material composed of Ca 3 N 2 Is obtained by high temperature treatment, or
The Ca 2 N two-dimensional material composed of Ca 3 N 2 And the mixture of Ca is prepared by high-temperature treatment.
2. The method of claim 1, wherein the organic solvent is dimethyl carbonate or propylene carbonate, and the Ca is 2 Ca in N two-dimensional material solution 2 The concentration of N is 0.1-5 g/L.
3. The method for producing a solar cell electrode according to claim 1, wherein the Ca is 2 The preparation method of the N two-dimensional material solution comprises the following steps:
(1) Adding Ca 3 N 2 The powder and the calcium powder are mixed according to the molar ratio of 1: (1-1.5) uniformly mixing to obtain a mixture;
(2) Pressing the mixture by adopting the pressure of 0.5-0.7 GPa;
(3) Packaging the pressed mixture in a vacuum container, and performing heat treatment to obtain Ca 2 N two-dimensional material;
(4) Mixing Ca 2 Dispersing the N two-dimensional material into an organic solvent to obtain Ca 2 N two-dimensional material solution finished products;
wherein the heat treatment temperature is 1050-1200 ℃; the heat treatment time is 30-50 h.
4. The method of claim 3, wherein in the step (3), the pressed mixture is rolled into a molybdenum foil, and placed in a vacuum ampoule, and then subjected to a high temperature treatment in a tube furnace.
5. The method for preparing an electrode for a solar cell according to claim 3, wherein in the step (4), ca is added 2 Mixing the N two-dimensional material with dimethyl carbonate, and carrying out ultrasonic treatment for 80-100 min to obtain Ca 2 And (5) obtaining a finished product of the N two-dimensional material solution.
6. The method of claim 1, wherein the mold is made of polyvinylidene fluoride, polytetrafluoroethylene, or ABS.
7. A solar cell electrode produced by the method for producing a solar cell electrode according to any one of claims 1 to 6.
8. A solar cell comprising the solar cell electrode of claim 7.
9. The solar cell of claim 8, wherein the solar cell is an HJT cell.
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