CN115452235A - Pressure sensor core and manufacturing method thereof - Google Patents
Pressure sensor core and manufacturing method thereof Download PDFInfo
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- CN115452235A CN115452235A CN202211242917.3A CN202211242917A CN115452235A CN 115452235 A CN115452235 A CN 115452235A CN 202211242917 A CN202211242917 A CN 202211242917A CN 115452235 A CN115452235 A CN 115452235A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L7/00—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
- G01L7/02—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges
- G01L7/08—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
- G01L13/02—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
- G01L13/025—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements using diaphragms
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0007—Fluidic connecting means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
- G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means
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- Measuring Fluid Pressure (AREA)
Abstract
The invention provides a pressure sensor core and a manufacturing method thereof, and relates to the technical field of pressure sensors, so that the internal structure of the pressure sensor is optimized to a certain extent, and the function and the characteristic of the core are improved. The invention provides a pressure sensor core body, which comprises a base, a silicon piezoresistive chip, a pin component, a metal ball and a sealing component, wherein the silicon piezoresistive chip is arranged on the base; an elastic body is formed on the base, an accommodating groove is formed in the elastic body, a boss is formed on one side, away from the accommodating groove, of the elastic body, and the silicon piezoresistive chip is arranged in the accommodating groove; a plurality of positioning holes are formed in the base, one of the positioning holes is used for connecting the metal ball, and the pin assembly is arranged in the other positioning holes; a sputtering film sensitive element, a compensation resistor, a lead electrode and a lead are also formed on the elastic body, and the sputtering film sensitive element is connected with the lead electrode, the compensation resistor and the pin assembly through the lead; the sealing component is connected with one end of the base to form a perfusion cavity.
Description
Technical Field
The invention relates to the technical field of pressure sensors, in particular to a pressure sensor core and a manufacturing method thereof.
Background
The core body of the diffused silicon pressure sensor and the core body of the sputtering film pressure sensor are two common pressure sensitive elements in industrial practice. The core body of the diffused silicon pressure sensor is characterized in that a diffused silicon pressure sensitive element is packaged in a stainless steel shell, and the detected pressure is transmitted to a sensitive chip through a stainless steel diaphragm and silicone oil filled inside the stainless steel diaphragm, so that the diffused silicon pressure sensor is suitable for various environments including severe corrosive medium environments. The diffused silicon pressure sensor core has the advantages of high sensitivity, high precision, high reliability, good chemical corrosion resistance, various pressure types (gauge pressure, absolute pressure and differential pressure), capability of measuring low pressure and micro differential pressure (as low as dozens of Pa and even as few Pa) and the like.
The sputtering film pressure sensor core body adopts a strain type resistor structure, insulating materials and resistor materials are deposited on an elastic stainless steel diaphragm in a molecular form on a stainless steel substrate by utilizing a magnetic control technology to form a molecular bonding insulating film, a resistor material film and a lead film, then the resistance film is etched into a resistor strip pattern of a Wheatstone bridge by adopting an ion beam etching process, and the lead film is etched into a lead electrode and is fused with the elastic stainless steel diaphragm into a whole. The sputtering film pressure sensor core has the advantages of good long-term stability, wide working temperature, high-strength vibration and impact resistance, no leakage, good temperature characteristic, high frequency response and the like.
Both types of pressure sensor cores have their advantages, but they also have significant disadvantages and application limitations. The sensitive resistor of the diffused silicon pressure sensor core body is formed by diffusing semiconductor silicon, so the temperature coefficient of the resistor is extremely poor, the temperature compensation is very difficult when the temperature exceeds 85 ℃, and the resistivity of the diffused silicon is changed greatly and irregularly when the temperature is lower than minus 45 ℃, so that the temperature resistance requirement of the environment cannot be met. Due to the brittleness of semiconductor silicon, the semiconductor silicon cannot resist high-strength vibration and impact, the diffusion silicon pressure core is not suitable for wide-range pressure measurement, generally not more than 70Mpa, and has limited overload resistance, particularly the maximum overload capacity of a high-pressure range is not more than 1.5 times.
The sensitivity of the sputtering film pressure sensor core is low because the sensitive resistor is made of alloy material and adopts a strain type measurement principle, the sputtering film pressure sensor is a typical gauge pressure type sensor and cannot measure absolute pressure, the surface of the film is in direct contact with the atmosphere, water vapor, oxygen and the like in the atmosphere can generate certain oxidation effect on the sensitive film, the service life of the sputtering film pressure sensor is reduced, meanwhile, when the sputtering film sensor carries out pressure measurement, certain measurement error can be generated along with the change of the atmospheric pressure (different factors such as temperature, humidity, height and the like) to influence the measurement precision, and therefore, the sputtering film pressure sensor core is only suitable for large-range pressure measurement, the measurement pressure is below 400kPa, and the sputtering film pressure sensor core is not suitable for being selected.
Therefore, it is desirable to provide a pressure sensor core and a method for manufacturing the same, which can solve the problems in the prior art to some extent.
Disclosure of Invention
The invention aims to provide a pressure sensor core and a manufacturing method thereof, which aim to optimize the internal structure of a pressure sensor to a certain extent and improve the function and the characteristic of the core.
The invention provides a pressure sensor core body which comprises a base, a silicon piezoresistive chip, a pin component, a metal ball and a sealing component, wherein the silicon piezoresistive chip is arranged on the base; an elastic body is formed on the base, an accommodating groove is formed in the elastic body, a boss is formed on one side, away from the accommodating groove, of the elastic body, and the silicon piezoresistive chip is arranged in the accommodating groove; a plurality of positioning holes are formed in the base, one of the positioning holes is used for connecting the metal ball, and the pin assembly is arranged in the other positioning holes; a sputtering film sensitive element, a compensation resistor, a lead electrode and a lead are further formed on the elastic body, the lead electrode is used for bridging the silicon piezoresistive chip and the pin assembly, and the sputtering film sensitive element is connected with the lead electrode, the compensation resistor and the pin assembly through the lead; the sealing component is connected with one end of the base to form a perfusion cavity.
And a pressure guide hole communicated with the accommodating groove is formed along the axial direction of the boss, a backpressure hole is formed along the axial direction of the silicon piezoresistive chip, the pressure guide hole is communicated with the backpressure hole, and the aperture of the pressure guide hole is close to or the same as that of the backpressure hole.
Specifically, the sputtering film sensitive element, the compensation resistor, the lead electrode and the lead are formed on one side of the elastic body, which is far away from the boss, in a coating and etching mode.
Further, the thickness of the elastic film on the side of the elastic body facing away from the boss is 0.2mm-2 mm.
Further, the lead electrode includes a first electrode and a second electrode; the first electrode is connected with the silicon piezoresistive chip, the second electrode is connected with the pin, and the first electrode and the second electrode are connected through the lead.
The outer wall surface of the base is formed with a containing ring groove along the circumferential direction of the base, and a sealing piece is arranged in the containing ring groove.
Specifically, silicon pressure drag chip with be equipped with the glue film between the holding tank, the glue film will silicon pressure drag chip with bond mutually between the holding tank, just the glue film is sealed gluey by fluorine silicon and forms, the glue film corresponds the position of drawing the pressure hole is formed with dodges the hole, so that draw the pressure hole with the holding tank is linked together.
Further, the sealing assembly comprises a support ring, a corrugated diaphragm and a welding ring; the ripple diaphragm is located the support ring with weld between the ring, just the one end of support ring with the one end of welding the ring welds mutually, the other end of support ring with the base welds mutually, the ripple diaphragm the support ring with the base forms fill the chamber, it has silicone oil to fill the intracavity filling.
Compared with the prior art, the pressure sensor core body provided by the invention has the following advantages:
the invention provides a pressure sensor core body, which comprises a base, a silicon piezoresistive chip, a pin component, a metal ball and a sealing component, wherein the silicon piezoresistive chip is arranged on the base; an elastic body is formed on the base, an accommodating groove is formed in the elastic body, a boss is formed on one side of the elastic body, which is far away from the accommodating groove, and the silicon piezoresistive chip is arranged in the accommodating groove; a plurality of positioning holes are formed in the base, one of the positioning holes is used for connecting the metal ball, and the pin assembly is arranged in the other positioning holes; the sputtering film sensitive element is connected with the lead electrode, the compensation resistor and the pin assembly through the lead; the sealing component is connected with one end of the base to form a perfusion cavity.
From this analysis, it is found that sufficient space can be provided for the formation of the sputtering thin film sensor, the lead electrode, the compensation resistor, and the lead by the elastic body formed on the base. And, because still be formed with the holding tank on the elastomer in this application to can provide stable mounted position for silicon piezoresistive chip. And through a plurality of locating holes that set up along the circumference interval of elastomer, and one of them locating hole installation metal ball, other locating holes are used for installing pin subassembly to can enough be connected silicon piezoresistive chip and pin subassembly through the lead wire, also can be connected sputtering film sensing element and lead wire electrode, compensation resistance and between the pin subassembly. Therefore, two independent Wheatstone measuring bridges can be formed, double-redundancy pressure measurement of the pressure sensor core body provided by the application can be realized, and the measurement mode can realize function complementation, namely, in different pressure ranges and temperature intervals, the silicon piezoresistive chip and the sputtering film sensitive element can show respective performance advantages, so that the function and the characteristic of the core body can be improved.
This application is connected through the one end of sealing-in subassembly with the base to can form and fill the chamber, and because one of them locating hole is used for installing the metal ball in this application, consequently, can seal the chamber of filling that the base formed through the metal ball, and can fill silicone oil to filling the intracavity through the locating hole that the metal ball corresponds, with the shaping of accomplishing the core.
In addition, the invention also provides a manufacturing method of the pressure sensor core body, which comprises the following steps: step one, processing a base to form an elastic body and a positioning hole, forming an accommodating groove and a boss on the elastic body, and processing a pressure guide hole communicated with the accommodating groove on the boss; secondly, forming a sputtering film sensitive element, a compensation resistor, a lead electrode and a lead on the elastic body; welding the support ring and the base, bonding the silicon piezoresistive chip into the accommodating groove, and aligning the back pressure hole and the pressure leading hole on the silicon piezoresistive chip; fourthly, the silicon piezoresistive chip and the sputtering film sensitive element are respectively connected with pins through leads to form two independent Wheatstone measuring bridges, and the compensation resistor is subjected to laser correction to compensate zero output; and step five, welding the welding ring, the corrugated diaphragm and the base to form a filling cavity, removing water vapor in the filling cavity, filling silicon oil into the filling cavity, and welding the steel ball by piezoresistance.
In the second step, the forming of the sputtering film sensitive element, the compensation resistor, the lead electrode and the lead on the elastic body comprises polishing and grinding one side of the elastic body, which is far away from the boss, and then forming the sputtering film sensitive element, the compensation resistor, the lead electrode and the lead in a coating and etching mode.
Through the manufacturing method of the pressure sensor core body, the pressure sensor core body with two pressure measuring systems can be formed, so that the pressure can be accurately measured and the adaptability of the core body can be realized through the advantages of the silicon piezoresistive chip and the sputtering film sensitive element in different pressure ranges and temperature ranges.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic structural diagram of a pressure sensor core provided in an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a base in a pressure sensor core provided in accordance with an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a sensing element, a compensation resistor, a lead, and a lead electrode of a sputtered film on an elastomer in a pressure sensor core according to an embodiment of the invention;
FIG. 4 is a schematic diagram illustrating a resistance change of a sensing element of a sputtering film when an elastomer in a pressure sensor core body is stressed according to an embodiment of the present invention;
FIG. 5 is an enlarged view of a portion of a silicon piezoresistive chip disposed in a receiving slot in a pressure sensor die body according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a lead connection structure of a sputtered film sensitive element, a silicon piezoresistive chip, and a pin in a pressure sensor core according to an embodiment of the present invention;
FIG. 7 is a schematic connection diagram of a dual-redundancy Wheatstone bridge formed by a sputtered film sensitive element and a silicon piezoresistive chip in a pressure sensor core according to an embodiment of the present invention.
In the figure: 1-a base; 101-an elastomer; 102-boss; 103-pressure guiding hole; 104-accommodating grooves; 2-a support ring; 3-welding a ring; 4-a corrugated membrane; 5-compensation resistance; 6-sputtering a thin film sensitive element; 7-silicon piezoresistive chips; 701-back pressure holes; 8-a lead; 9-a lead electrode; 901-a first electrode; 902 — a second electrode; 10-silicone oil; 11-a seal; 12-glue layer; 13-a metal ball; 14-pin; 15-sealing member.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, as presented in the figures, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.
In the description of the embodiments of the present application, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the present invention are usually placed in when used, and are only used for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements indicated must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the embodiments of the present application, it should also be noted that, unless otherwise explicitly stated or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
As used herein, the term "and/or" includes any one of the associated listed items and any combination of any two or more of the items.
For ease of description, spatial relationship terms such as "above 8230; …," upper "," above 8230; \8230;, "below" and "lower" may be used herein to describe the relationship of one element to another element as illustrated in the figures. Such spatial relationship terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
The terminology used herein is for the purpose of describing various examples only and is not intended to be limiting of the disclosure. The singular forms also are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," and "having" specify the presence of stated features, quantities, operations, elements, components, and/or combinations thereof, but do not preclude the presence or addition of one or more other features, quantities, operations, components, elements, and/or combinations thereof.
Variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, may be expected. Thus, the examples described herein are not limited to the particular shapes shown in the drawings, but include changes in shape that occur during manufacturing.
The features of the examples described herein may be combined in various ways that will be apparent after understanding the disclosure of the present application. Further, while the examples described herein have a variety of configurations, other configurations are possible, as will be apparent after understanding the disclosure of the present application. In addition, technical solutions between the embodiments may be combined with each other, but must be based on the realization of the technical solutions by a person skilled in the art, and when the technical solutions are contradictory to each other or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope claimed in the present application.
Example 1
As shown in fig. 1-7, the invention provides a pressure sensor core body, which comprises a base 1, a silicon piezoresistive chip 7, a pin assembly, a metal ball 13 and a sealing assembly; an elastic body 101 is formed on the base 1, a containing groove 104 is formed on the elastic body 101, a boss 102 is formed on one side of the elastic body 101, which is far away from the containing groove 104, and the silicon piezoresistive chip 7 is arranged in the containing groove 104; a plurality of positioning holes are formed in the base 1, wherein one positioning hole is used for connecting the metal ball 13, and the pin assembly is arranged in other positioning holes; a sputtering film sensitive element 6, a compensation resistor 5, a lead electrode 9 and a lead 8 are further formed on the elastic body 101, the lead electrode 9 is used for bridging the silicon piezoresistive chip 7 and the pin assembly, and the sputtering film sensitive element 6 is connected with the lead electrode 9, the compensation resistor 5 and the pin assembly through the lead 8; the sealing component is connected with one end of the base 1 to form a perfusion cavity.
Compared with the prior art, the pressure sensor core body provided by the invention has the following advantages:
the pressure sensor core body provided by the invention can provide sufficient space for forming the sputtering film sensitive element 6, the lead electrode 9, the compensation resistor 5 and the lead 8 through the elastic body 101 formed on the base 1. In addition, since the accommodating groove 104 is formed on the elastic body 101 in the present application, a stable mounting position can be provided for the silicon piezoresistive chip 7. And through a plurality of positioning holes arranged at intervals along the circumferential direction of the elastic body 101, one of the positioning holes is provided with the metal ball 13, and the other positioning holes are used for installing the pin assembly, so that the silicon piezoresistive chip 7 and the pin assembly can be connected through the lead 8, and the sputtering film sensitive element 6 can also be connected with the lead electrode 9, the compensation resistor 5 and the pin assembly. Therefore, two independent wheatstone measuring bridges can be formed to realize the dual-redundancy pressure measurement of the pressure sensor core body provided by the application, and the measurement mode can realize the function complementation, namely, in different pressure ranges and temperature ranges, the silicon piezoresistive chip 7 and the sputtering film sensitive element 6 can show respective performance advantages, so that the function and the characteristic of the core body can be improved.
This application is connected through the one end of sealing-in subassembly with base 1 to can form and fill the chamber, and because one of them locating hole is used for installing metal ball 13 in this application, consequently, can seal the chamber of filling that base 1 formed through metal ball 13, and can fill silicon oil 10 to filling the intracavity through the locating hole that metal ball 13 corresponds, with the shaping of completion core.
In this embodiment, since the pressure introducing hole 103 described below is not formed in the center of the boss 102 in the present application, in the structural state, the pressure measuring type of the silicon piezoresistive chip 7 is a pressure insulating type or a sealing pressure measurement, and the measuring type of the sputtered thin film sensor 6 is a gauge pressure measurement or a differential pressure measurement.
It should be noted that, in the present application, when the pressure-introducing hole 103 described below is not formed in the center of the boss 102, the sputtering film sensor 6 is formed on the pressure-sensitive side of the elastic body 101 and isolated from the silicone oil 10 filled in the filling cavity by the below-described bellows 4, and the back pressure side of the elastic body 101 can be directly contacted with the medium to be measured, so that the present application can be applied to the measurement of the differential pressure.
It should be added that the base 1 in this application is a metal base made of stainless steel material, and therefore, the elastic body 101 is also made of stainless steel material, the number of positioning holes can be four, five or even more, and preferably, the number of positioning holes in this application is 8, wherein seven positioning holes are used for mounting the pin assembly, another positioning hole is used for mounting the metal ball 13, and the metal ball 13 is made of stainless steel material.
Because the base 1 in this application, the elastic component that forms on the base 1 and metal ball 13 all adopt stainless steel material to carry out medium isolation encapsulation, realized that silicon pressure drag core (silica-based) and sputtered film sensing element 6 (metal-based) are complementary in the advantage in the pressure measurement field, have silicon-based pressure sensor sensitivity height concurrently, the frequency response is fast, the precision is high, linear good and measurable minute-pressure's advantage and metal-based pressure sensor temperature drift are low, the range is wide, anti overload, impact and vibration ability reinforce's advantage, application prospect is wide.
It can be understood that the pressure sensor core structure provided by the application effectively solves the problems and application limitations of the existing single diffusion pressure sensor and the existing sputtering film pressure sensor. The sputtering film sensitive element 6 and the silicon piezoresistive chip 7 are connected in different modes through the lead 8, and can form a compensation and measurement circuit with multiple functions, so that the functions and the characteristics of the pressure sensor core body can be expanded. And compact structure, the size is little, and installation convenient to use can realize simultaneously gauge pressure, absolute pressure and differential pressure's measurement.
Optionally, the pin assembly in this application includes pin 14 and sealing member 15, and sealing member 15 in this application is made of a glass material, and during actual installation, both ends of pin 14 pass through sealing member 15, and are fixedly connected with sealing member 15, and sealing member 15 is disposed in the positioning hole, and is fixedly connected with base 1, thereby implementing installation of the pin assembly.
It should be added here that, in the present application, the boss 102 is disposed at the back pressure side of the elastic body 101, and the structure and the size of the boss 102 can optimize the stress distribution of the elastic body 101 when being pressed, and thus determine the pattern and the position of the resistor strips of the sputtered thin film strain resistor on the elastic body 101.
Preferably, as shown in fig. 6 in combination with fig. 7, the compensation resistor 5 in the present application can compensate for zero errors of the silicon piezoresistive chip 7 due to bridge arm imbalance or chip bonding stress.
Example 2
As shown in FIG. 1 in combination with FIG. 2 and FIG. 5, in the present application, a pressure guiding hole 103 communicating with the receiving groove 104 is formed along the axial direction of the boss 102, a back pressure hole 701 is formed along the axial direction of the silicon piezoresistive chip 7, the pressure guiding hole 103 communicates with the back pressure hole 701, and the diameter of the pressure guiding hole 103 is close to or the same as that of the back pressure hole 701.
In this embodiment, when the boss 102 in the present application is formed with the pressure-introducing hole 103 communicating with the receiving groove 104 in the axial direction, the silicon piezoresistive chip 7 is formed with the back pressure hole 701 corresponding to the pressure-introducing hole 103 in the axial direction, and preferably, the diameter of the pressure-introducing hole 103 is identical to or close to the diameter of the back pressure hole 701.
When the pressure guiding holes 103 are formed on the boss 102, the measurement type of the silicon piezoresistive chip 7 is gauge pressure type, and when the silicon piezoresistive chip 7 is attached to the receiving groove 104, the pressure guiding holes 103 are aligned with the back pressure holes 701.
It should be added here that in this structural state, the sputtered film sensor 6 is also a gauge pressure measurement in the present application.
Based on the above embodiments, the sputtering film sensor 6, the compensation resistor 5, the lead electrode 9 and the lead 8 formed on the elastic member in the present application are formed on the side of the elastic body 101 away from the boss 102 by plating and etching.
Since the sputtering film sensitive element 6, the compensation resistor 5, the lead electrode 9 and the lead 8 are all required to be formed on the elastic body 101 by plating and etching, in order to ensure that the above structure can be formed smoothly, the thickness of the elastic film in the present application is between 0.2mm and 2mm, and in the embodiment provided by the present application, the thickness of the elastic film on the side of the elastic body 101 away from the boss 102 is preferably between 0.2mm and 0.3mm, so that the requirement of the surface plating finish of the elastic body 101 can be met.
As shown in fig. 3, the lead electrode 9 in the present application includes a first electrode 901 and a second electrode 902; the first electrode 901 is connected with the silicon piezoresistive chip 7, the second electrode 902 is connected with the pin 14, and the first electrode 901 and the second electrode 902 are connected through the lead 8.
It is understood that the lead 8 described above in this application includes two types, one of the leads 8 is a lead 8 formed on the elastic body 101 by plating for connecting the first electrode 901 and the second electrode 902, and the other lead 8 is a lead 8 for connecting the silicon piezoresistive chip 7 and the lead 14 and connecting the sputtering film sensor 6 and the lead 14 as shown in fig. 1.
Preferably, as shown in fig. 1, a receiving ring groove is formed on the outer wall surface of the base 1 along the circumferential direction of the base 1, and a sealing member 11 is disposed in the receiving ring groove. Because the pressure sensor core that this application provided need seal when practical application, consequently, through the holding annular groove that forms on the outer wall of base 1, can be convenient for fix a position sealing member 11 to when practical application, can guarantee the sealed degree of use of whole core.
It can be understood that, as shown in fig. 1 and fig. 5, a glue layer 12 is disposed between the silicon piezoresistive chip 7 and the receiving groove 104, the glue layer 12 can achieve adhesion between the silicon piezoresistive chip 7 and the receiving groove 104, and preferably, the glue layer 12 is formed by a fluorosilicone sealant. Moreover, since the boss 102 is formed with the pressure guiding hole 103 in the second embodiment, in order to avoid the adhesive layer 12 from blocking the pressure guiding hole 103, an avoiding hole is formed at a position of the adhesive layer 12 corresponding to the pressure guiding hole 103 in the present application, so that the pressure guiding hole 103 is communicated with the accommodating groove 104.
It is understood that the bonding of the silicon piezoresistive chip 7 by the formed glue layer 12 can improve the negative effect on the silicon piezoresistive chip 7 when the elastic body 101 is deformed under pressure.
It should be added here that, in this application, because the glue layer 12 needs to be used to realize the bonding of the silicon piezoresistive chip 7 in the accommodating groove 104, therefore, in order to ensure that the glue layer 12 in this application can be stably bonded with the bottom of the accommodating groove 104, the roughness of the bottom of the accommodating groove 104 can be increased, so that the glue layer 12 can be better bonded with the accommodating groove 104, and further, the bonding of the silicon piezoresistive chip 7 is realized.
Further, as shown in fig. 1, the sealing assembly in the present application includes a support ring 2, a bellows 4, and a weld ring 3; the corrugated diaphragm 4 is located between the support ring 2 and the welding ring 3, one end of the support ring 2 is welded with one end of the welding ring 3, the other end of the support ring 2 is welded with the base 1, the corrugated diaphragm 4, the support ring 2 and the base 1 form a perfusion cavity, and silicone oil 10 is perfused in the perfusion cavity.
In addition, the invention also provides a manufacturing method of the pressure sensor core body, which comprises the following steps: step one, processing a base 1 to form an elastic body 101 and a positioning hole, forming an accommodating groove 104 and a boss 102 on the elastic body 101, and processing a pressure guide hole 103 communicated with the accommodating groove 104 on the boss 102; step two, forming a sputtering film sensitive element 6, a compensation resistor 5, a lead electrode 9 and a lead 8 on the elastic body 101; welding the support ring 2 and the base 1, bonding the silicon piezoresistive chip 7 into the accommodating groove 104, and making the back pressure hole 701 on the silicon piezoresistive chip 7 opposite to the pressure leading hole 103; step four, the silicon piezoresistive chip 7 and the sputtering film sensitive element 6 are respectively connected with the pin 14 through the lead 8 to form two independent Wheatstone measuring bridges, and the compensation resistor 5 is subjected to laser correction to compensate zero position output; and step five, welding the welding ring 3, the corrugated diaphragm 4 and the base 1 to form a filling cavity, removing water vapor in the filling cavity, filling silicone oil 10 into the filling cavity, and performing piezoresistive welding on the steel ball.
In the second step, the forming of the sputtering film sensitive element 6, the compensation resistor 5, the lead electrode 9 and the lead 8 on the elastic body 101 includes polishing and grinding one side of the elastic body 101 away from the boss 102, and then forming the sputtering film sensitive element 6, the compensation resistor 5, the lead electrode 9 and the lead 8 by means of coating and etching.
Through the manufacturing method of the pressure sensor core body, the pressure sensor core body with two pressure measuring systems can be formed, so that the pressure can be accurately measured and the adaptability of the core body can be realized through the advantages of the silicon piezoresistive chip 7 and the sputtering film sensitive element 6 in different pressure ranges and temperature ranges.
It should be added here that, in the above step one, the elastic body 101 needs to be ground and polished to make the thickness of the elastic film about 0.2mm-0.3mm and meet the surface finish requirement for plating the sputtering film sensitive element 6.
In the third step, the support ring 2 and the base 1 can be welded by laser welding or argon arc welding, so that the air tightness of the formed filling cavity and the connection strength between the structures can be ensured.
In the fifth step, the welding ring 3, the corrugated diaphragm 4 and the base 1 are welded by argon arc welding or laser welding, and after welding, the welding is carried out at high temperature in a vacuum environment, so that water vapor in the filling cavity can be taken out, then the silicone oil 10 is filled in the high vacuum environment, and finally the metal ball 13 is welded by press assembly, so that the sealing and packaging of the core body are completed.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the scope of the present invention, which is intended to cover any modifications, equivalents, improvements, etc. within the spirit and scope of the present invention.
Claims (10)
1. A pressure sensor core body is characterized by comprising a base, a silicon piezoresistive chip, a pin component, a metal ball and a sealing component;
an elastic body is formed on the base, an accommodating groove is formed in the elastic body, a boss is formed on one side, away from the accommodating groove, of the elastic body, and the silicon piezoresistive chip is arranged in the accommodating groove;
a plurality of positioning holes are formed in the base, one of the positioning holes is used for connecting the metal ball, and the pin assemblies are arranged in the other positioning holes;
a sputtering film sensitive element, a compensation resistor, a lead electrode and a lead are further formed on the elastic body, the lead electrode is used for bridging the silicon piezoresistive chip and the pin assembly, and the sputtering film sensitive element is connected with the lead electrode, the compensation resistor and the pin assembly through the lead;
the sealing component is connected with one end of the base to form a perfusion cavity.
2. The pressure sensor core body of claim 1, wherein a pressure guiding hole is formed along the axial direction of the boss and communicated with the receiving groove, a back pressure hole is formed along the axial direction of the silicon piezoresistive chip and communicated with the back pressure hole, and the diameter of the pressure guiding hole is close to or the same as that of the back pressure hole.
3. The pressure sensor core of claim 1 wherein said sputtered film sensing element, said compensation resistor, said lead electrode and said lead are plated and etched on a side of said elastomer facing away from said boss.
4. A pressure sensor core as claimed in claim 1, wherein the elastomeric membrane has a thickness of between 0.2mm and 2mm on the side of the elastomer facing away from the boss.
5. The pressure sensor core of claim 1 wherein the lead electrode comprises a first electrode and a second electrode;
the first electrode is connected with the silicon piezoresistive chip, the second electrode is connected with the pin, and the first electrode and the second electrode are connected through the lead.
6. The pressure sensor core according to claim 1, wherein the outer wall surface of the base is formed with a receiving ring groove along a circumferential direction of the base, and a sealing member is provided in the receiving ring groove.
7. The pressure sensor core body as claimed in claim 2, wherein a glue layer is disposed between the silicon piezoresistive chip and the receiving groove, the glue layer bonds the silicon piezoresistive chip and the receiving groove, the glue layer is formed by fluorosilicone sealant, and an avoiding hole is formed in a position of the glue layer corresponding to the pressure guiding hole, so that the pressure guiding hole is communicated with the receiving groove.
8. The pressure sensor core of claim 1 wherein the seal assembly comprises a support ring, a convoluted diaphragm, and a weld ring;
the ripple diaphragm is located the support ring with weld between the ring, just the one end of support ring with the one end of welding the ring welds mutually, the other end of support ring with the base welds mutually, the ripple diaphragm the support ring with the base forms the chamber of filling, it has silicone oil to fill the intracavity perfusion.
9. A manufacturing method of a pressure sensor core body is characterized by comprising the following steps:
step one, processing a base to form an elastic body and a positioning hole, forming an accommodating groove and a boss on the elastic body, and processing a pressure guide hole communicated with the accommodating groove on the boss;
secondly, forming a sputtering film sensitive element, a compensation resistor, a lead electrode and a lead on the elastic body;
welding the support ring and the base, bonding the silicon piezoresistive chip into the accommodating groove, and aligning the back pressure hole and the pressure leading hole on the silicon piezoresistive chip;
fourthly, the silicon piezoresistive chip and the sputtering film sensitive element are respectively connected with pins through leads to form two independent Wheatstone measuring bridges, and the compensation resistor is subjected to laser correction to compensate zero output;
and step five, welding the welding ring, the corrugated membrane and the base to form a filling cavity, removing water vapor in the filling cavity, filling silicon oil into the filling cavity, and performing piezoresistive welding on the steel ball.
10. The method according to claim 9, wherein in the second step, the step of forming the sputtering film sensor, the compensation resistor, the lead electrode and the lead on the elastic body includes polishing and grinding a side of the elastic body facing away from the boss, and then forming the sputtering film sensor, the compensation resistor, the lead electrode and the lead by plating and etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202211242917.3A CN115452235A (en) | 2022-10-11 | 2022-10-11 | Pressure sensor core and manufacturing method thereof |
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| CN202211242917.3A CN115452235A (en) | 2022-10-11 | 2022-10-11 | Pressure sensor core and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116147823A (en) * | 2022-12-21 | 2023-05-23 | 松诺盟科技有限公司 | Flat membrane type thin film core body and flat membrane type nano thin film pressure transmitter |
| CN116222652A (en) * | 2022-12-26 | 2023-06-06 | 松诺盟科技有限公司 | Nanometer film core and composite sensor |
| CN117490910A (en) * | 2024-01-03 | 2024-02-02 | 西安中星测控有限公司 | High-precision MCS pressure sensor and manufacturing method |
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2022
- 2022-10-11 CN CN202211242917.3A patent/CN115452235A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116147823A (en) * | 2022-12-21 | 2023-05-23 | 松诺盟科技有限公司 | Flat membrane type thin film core body and flat membrane type nano thin film pressure transmitter |
| CN116147823B (en) * | 2022-12-21 | 2024-03-22 | 松诺盟科技有限公司 | Flat membrane type thin film core body and flat membrane type nano thin film pressure transmitter |
| CN116222652A (en) * | 2022-12-26 | 2023-06-06 | 松诺盟科技有限公司 | Nanometer film core and composite sensor |
| CN116222652B (en) * | 2022-12-26 | 2023-12-15 | 松诺盟科技有限公司 | Nanometer film core and composite sensor |
| CN117490910A (en) * | 2024-01-03 | 2024-02-02 | 西安中星测控有限公司 | High-precision MCS pressure sensor and manufacturing method |
| CN117490910B (en) * | 2024-01-03 | 2024-04-12 | 西安中星测控有限公司 | High-precision MCS pressure sensor and manufacturing method |
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