CN115421359A - Synchrotron radiation X-ray interference photoetching self-adaptive exposure device and method - Google Patents

Synchrotron radiation X-ray interference photoetching self-adaptive exposure device and method Download PDF

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CN115421359A
CN115421359A CN202211152104.5A CN202211152104A CN115421359A CN 115421359 A CN115421359 A CN 115421359A CN 202211152104 A CN202211152104 A CN 202211152104A CN 115421359 A CN115421359 A CN 115421359A
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sample
grating
distance adjusting
support
measured
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薛超凡
杨树敏
赵俊
吴衍青
王勇
邰仁忠
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Shanghai Advanced Research Institute of CAS
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Shanghai Advanced Research Institute of CAS
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G03F7/2039—X-ray radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention provides a synchrotron radiation X-ray interference lithography self-adaptive exposure device, which comprises an offline distance adjusting component and an online self-adaptive exposure component, wherein the offline distance adjusting component and the online self-adaptive exposure component are detachably arranged together; the off-line distance adjusting assembly comprises a grating support, a mask grating arranged on the grating support, a distance adjusting rod inserted in the grating support and a locking screw used for locking the distance adjusting rod on the grating support; the online self-adaptive exposure assembly comprises a sample to be measured and a force sensor, wherein the sample to be measured is in extrusion fit with one end, facing the mask grating, of the distance adjusting rod, and the force sensor is connected with one side, away from the mask grating, of the offline distance adjusting assembly, the sample to be measured is arranged on the sample support, and the force sensor measures pressure of the sample to be measured in a direction perpendicular to the plane where the sample to be measured is located. The invention also provides a corresponding self-adaptive exposure method. The self-adaptive exposure device can avoid the relative displacement between the grating and the sample during exposure, and ensure that the distance between the grating and the sample meets the requirement during the adjustment of the exposure area.

Description

Synchrotron radiation X-ray interference lithography self-adaptive exposure device and method
Technical Field
The invention relates to an exposure device, in particular to a synchrotron radiation X-ray interference lithography self-adaptive exposure device and a synchrotron radiation X-ray interference lithography self-adaptive exposure method.
Background
Extreme ultraviolet lithography, as the next generation of lithography, is being committed by the semiconductor industry to rescue the mission of moore's law. Extreme ultraviolet photoresist is a key material for manufacturing integrated circuits, and the performance of the extreme ultraviolet photoresist directly affects the performance of integrated circuit chips. The core exposure performance of the extreme ultraviolet photoresist mainly comprises three aspects: sensitivity, resolution and edge roughness. The characterization of the exposure performance is a necessary condition for developing the extreme ultraviolet photoresist and an important link for realizing the optimization of the extreme ultraviolet photoresist formula. X-ray interference lithography (XIL) is a novel advanced micro-nano processing technology for exposing photoresist by using interference fringes of two or more coherent X-ray beams, and can be used for processing nano structures with dozens of even dozens of nano periods. The principle of interference lithography is to divide a light beam into multiple coherent light beams by using a mask grating and to generate interference fringes at the photoresist to expose the photoresist, and the exposure pattern can be recorded. The performance of the photoresist can be characterized by detecting the quality of the exposed pattern. The current interference lithography technology is the only experimental technology which can realize the simultaneous detection of three exposure performances of the photoresist by one exposure.
The schematic diagram of the conventional interference lithography is shown in fig. 1, and assuming that the period of the mask grating is d, the wavelength of incident light is λ, and the diffraction angle of the light beam is θ, the following equation is provided according to the grating:
d*sinθ＝N*λ (1)
wherein N is the diffraction order.
Assuming that the width of the mask grating is D and the center distance of the two mask gratings is 2D, the width of the interference area of the ± 1 st order diffracted lights of the two gratings is D and the position where the interference fringe is generated is at the vertical working distance L from the mask grating:
L＝D/tanθ (2)
according to the formulas (1) and (2),
Figure BDA0003857346000000021
wherein N is the diffraction order, D is the width of the mask grating, lambda is the wavelength of the incident light, and D is the period of the mask grating.
For extreme ultraviolet light, the wavelength is 13.5nm, if the width of the mask grating is 200 μm, and the period is 80nm, then for ± 1 st order diffraction of the grating, the vertical distance L from the position where the interference fringe is generated to the mask grating is 1.17mm, considering the processing difficulty of the small period mask grating, if the width of the mask grating is reduced to 100 μm, the vertical distance L from the position where the interference fringe is generated to the mask grating is correspondingly reduced to 0.58mm.
With the development of the technology, higher requirements are put on the period of the mask grating, the period of the grating is usually required to be less than 100nm, and the vertical distance between the position where the interference fringe is generated and the mask grating is about hundreds of micrometers. Due to the extreme ultraviolet light propagation characteristics, the entire exposure system needs to be placed in a high vacuum environment, which puts higher demands on the distance measurement and the stability of the entire exposure system.
In the existing exposure system, a mask grating and a sample are respectively positioned on respective adjusting mechanisms, the mask grating performs one-dimensional motion to adjust the distance between the mask grating and the sample, and the sample performs two-dimensional motion to change the exposure position of the mask grating on the sample. The movement direction of the sample grating is perpendicular to the travel direction of the sample. Although existing systems can meet the requirement of a vertical distance of several hundred microns, there are two disadvantages: the first disadvantage is poor stability, which is mainly reflected by relative displacement between the mask grating and the sample, and the exposure quality is affected if the mask grating and the sample are not relatively static during exposure. This is because the grating and the sample are not hard-connected in the existing exposure system, in other words, there is no contact between them, it is ensured to reduce the relative displacement between them as much as possible by the overall stability of the system, and if the overall stability of the system is good, the relative displacement is small, and if the overall stability of the system is poor, the relative displacement is large. The second disadvantage is that the trajectory of the sample movement is difficult to ensure to be perfectly perpendicular to the mask grating, and therefore when the exposure area on the sample is changed, the distance between the sample and the mask grating is changed, which does not fully satisfy the requirement of the above formula (3).
Disclosure of Invention
The invention aims to provide a synchrotron radiation X-ray interference lithography self-adaptive exposure device and a synchrotron radiation X-ray interference lithography self-adaptive exposure method, which are used for avoiding the relative displacement between a grating and a sample during exposure and ensuring that the distance between the grating and the sample meets the requirement during adjustment of an exposure area.
In order to achieve the above object, the present invention provides a synchrotron radiation X-ray interference lithography adaptive exposure apparatus, comprising an off-line distance adjusting component and an on-line adaptive exposure component which are detachably mounted together; the off-line distance adjusting assembly comprises a grating support, a mask grating arranged on the grating support, a distance adjusting rod inserted in the grating support and a locking screw used for locking the distance adjusting rod on the grating support; the online self-adaptive exposure assembly comprises a sample to be measured and a force sensor, wherein the sample to be measured is in extrusion fit with one end, facing the mask grating, of the distance adjusting rod, and the force sensor is detachably connected with one side, deviating from the mask grating, of the offline distance adjusting assembly, the sample to be measured is arranged on the sample support, and the force sensor is used for measuring the pressure of the sample to be measured in the direction perpendicular to the plane where the sample to be measured is located.
The extending direction of the distance adjusting rod is perpendicular to the plane where the mask grating is located, and two ends of the adjusting rod penetrate out of the grating support.
The extending direction of the locking screws is parallel to the plane of the mask grating.
The periphery of the grating support is provided with 3 screw holes for the distance adjusting rod to pass through, and the distance adjusting rod is a screw rod matched with the screw holes.
The center of the grating support is provided with a light through hole, a mask grating substrate is arranged on the end face of one side of the grating support corresponding to the light through hole, and the mask grating is prepared on the mask grating substrate.
The sample support is connected with a sample driving motor, and the sample driving motor is arranged to drive the sample support to move along a two-dimensional direction parallel to a plane where a sample to be detected is located.
One side of the force sensor, which is far away from the off-line distance adjusting assembly, is connected with a grating driving motor through a connecting fixing block, and the grating driving motor is arranged to drive a grating support of the off-line distance adjusting assembly to move along the direction perpendicular to the plane of the sample to be detected through the force sensor.
The sample to be detected is prepared on a sample substrate, the sample substrate is fixed on a sample fixing plate, and one side of the sample fixing plate, which is far away from the sample to be detected, is provided with a plurality of springs and is connected with a sample bracket through the springs.
The quantity of spring is 3, and 3 springs evenly distributed are on the sample fixed plate.
In another aspect, the present invention provides a synchrotron radiation X-ray interference lithography adaptive exposure method, including:
s0: providing the synchrotron radiation X-ray interference lithography self-adaptive exposure device;
s1: installing an off-line distance adjusting component of the synchrotron radiation X-ray interference lithography self-adaptive exposure device on a fixed clamp, and performing off-line distance adjustment and position locking by using the off-line distance adjusting component;
s2: installing an off-line distance adjusting component of the synchrotron radiation X-ray interference lithography self-adaptive exposure device and an on-line self-adaptive exposure component together, and placing the components into a vacuum cavity;
s3: driving the grating support to move towards the direction close to the sample to be detected until all three distance adjusting rods contact the sample to be detected, stopping driving the grating support at the moment, and carrying out online exposure on the sample to be detected;
s4: and after the exposure is finished, driving the grating support to move towards the direction far away from the sample to be measured, driving the sample support to change the position, and returning to the step S3 until the sample to be measured is measured.
The synchronous radiation X-ray interference photoetching self-adaptive exposure device realizes the matching between the mask grating and the sample to be detected through the extrusion matching of the three distance adjusting rods and the sample to be detected during exposure, controls the relative displacement between the three distance adjusting rods and the sample to be detected through friction force, can almost be considered to be relatively static during exposure, and is slightly influenced by the integral stability of a system. In addition, the synchrotron radiation X-ray interference lithography self-adaptive exposure device adjusts the distance between the grating and the sample through three distance adjusting rods, and even if the moving track of the sample is not parallel to the mask grating, the distance between the grating and the sample can be ensured to meet the requirement during exposure.
Drawings
FIG. 1 is a schematic diagram of a prior art interference lithography technique.
Fig. 2 is a schematic diagram of the overall structure of the synchrotron radiation X-ray interference lithography adaptive exposure apparatus according to an embodiment of the present invention.
Fig. 3 and 4 are schematic structural diagrams of an off-line distance adjustment assembly of a synchrotron radiation X-ray interference lithography adaptive exposure apparatus according to an embodiment of the present invention, wherein fig. 3 shows a front view of the off-line distance adjustment assembly, and fig. 4 shows a side cross-sectional view of the off-line distance adjustment assembly.
Detailed Description
Referring to fig. 2-4, an adaptive exposure apparatus for synchrotron radiation X-ray interference lithography according to an embodiment of the present invention is shown, which includes an off-line distance adjusting module and an on-line adaptive exposure module detachably mounted together.
As shown in fig. 3 and 4, the offline distance adjusting assembly is used for offline distance adjustment of the mask grating 2 and the sample to be measured, and includes a grating support 1, the mask grating 2 mounted on the grating support 1, a distance adjusting rod 3 inserted into the grating support 1, and a locking screw 4 for locking the distance adjusting rod 3 to the grating support 1.
The extending direction of the distance adjusting rod 3 is perpendicular to the plane where the mask grating 2 is located, and two ends of the adjusting rod 3 penetrate out of the grating support 1. The extending direction of the locking screws 4 is parallel to the plane of the mask grating 2.
The mask grating 2 is fixed at the center of the grating support 1, 3 screw holes for the distance adjusting rods 3 to pass through are arranged on the periphery of the grating support 1, and the 3 screw holes are evenly distributed on the periphery of the mask grating 2. The distance adjusting rod 3 is a screw rod matched with a screw hole of the grating support 1, and is locked and fixed on the grating support through a locking screw 4 after the length of the screw rod is adjusted.
The center of the grating support 1 is provided with a light through hole 11, a mask grating substrate 21 is arranged on the end face of one side of the grating support corresponding to the light through hole, and the mask grating 2 is prepared on the mask grating substrate 21. The mask grating substrate 21 is preferably an SiN substrate, the mask grating is prepared on the SiN substrate, a through hole needs to be formed in the center of the grating support 1 to ensure that upstream EUV light can irradiate the mask grating, a groove needs to be formed in the position, where the mask grating is fixed, on the grating support 1, the depth of the groove is the same as the thickness of the mask grating substrate 21, and finally the mask grating substrate 21 is adhered to the support through glue.
The overall shape of the grating support 1 has no special requirements. The mask grating 2 may be square, but in the present embodiment, the overall outer shape of the grating support 1 is circular in consideration of the installation of the three adjustment bars, so as to reserve the installation position of the distance adjustment bar 3.
In this embodiment, the end surface of the grating holder 1 on the side where the mask grating 2 is mounted is defined as the front surface, so that the zero scale of the distance adjusting rod 3 is disposed on the plane where the mask grating 2 is located, the distance adjusting rod 3 passes through the grating holder 1 from the back surface of the grating holder 1, and the distance that the distance adjusting rod 3 exceeds the front surface of the grating holder 1 is the vertical working distance of the mask grating (i.e., the vertical working distance L calculated by the above formula (3)). Moreover, the distance of each distance adjusting rod 3 beyond the front surface of the grating support 1 needs to be adjusted to be the vertical working distance of the mask grating, so that a plane can be defined by using the end points of the three distance adjusting rods 3, and the defined plane is the plane where the sample is exposed.
Therefore, when the off-line distance is adjusted, the micrometer (or vernier caliper) can be used for measuring the distance of the distance adjusting rod 3 exceeding the front face of the grating support 1 in real time until the distance is the vertical working distance of the mask grating, the adjustment is completed at this moment, and the position of the distance adjusting rod 3 is locked by the locking screw 4 beside the distance adjusting rod 3. Wherein, the micrometer (or vernier caliper) is not fixed on the synchrotron radiation X-ray interference photoetching self-adaptive exposure device.
After the off-line distance adjustment is finished, the off-line distance adjustment assembly and the on-line self-adaptive exposure assembly can be installed together and placed into a vacuum cavity to carry out on-line exposure later.
Referring to fig. 2 again, the online adaptive exposure device includes a sample 6 to be measured that is press-fitted to one end of the distance adjustment rod 3 facing the mask grating 2, and a force sensor 8 detachably connected to one side of the offline distance adjustment device facing away from the mask grating 2, where the sample 6 to be measured is mounted on the sample holder 5. The sample holder 5 is connected to a sample drive motor (not shown) arranged to drive the sample holder 5 in a two-dimensional direction parallel to the plane of the sample 6 to be measured.
The synchrotron radiation device is very huge, and the light that the light source sent is parallel with ground transmission, in order to guarantee the efficiency of light beam, generally can not be for the light path design to shine the sample perpendicularly downwards, or the sample is shone in the slope, and the normal level all incides to the sample, consequently, the sample 6 that awaits measuring is normal all vertical setting.
The sample 6 to be measured is photoresist which is prepared on the sample substrate 61, the photoresist is a film of dozens of nanometers, and the film is difficult to support by itself without a substrate, so that a layer of the sample substrate 6 is required to support. Further, the sample substrate 61 is fixed to a sample fixing plate 71. The sample fixing plate 71 is provided with a plurality of springs 72 at a side thereof away from the sample 6 to be measured, and is connected to the sample holder 5 through the springs 72. In the present embodiment, the number of the springs 72 is 3, and 3 springs 72 are uniformly distributed on the sample fixing plate 71 (near the outer edge, the included angle between the three springs is 120 °). The strength of the spring 72 is such that it cannot crush the sample substrate 61 while meeting regulatory requirements.
And one side of the force sensor 8, which is far away from the off-line distance adjusting assembly, is connected with a grating driving motor 9 through a connecting fixing block 10. Wherein, connect fixed block 10 and can have the counter weight function, grating driving motor 9 sets up to pass through force sensor 8 drive grating support 1 of off-line distance adjustment subassembly moves along the planar direction in perpendicular to the sample 6 place that awaits measuring, force sensor 8 sets up to measure the pressure that the sample 6 that awaits measuring received in the planar direction in perpendicular to the sample 6 place that awaits measuring. Therefore, the grating support 1 is driven by the grating driving motor 9 to move towards the direction close to the sample 6 to be detected until all three distance adjusting rods 3 contact the sample substrate 61 coated with the sample 6 to be detected (namely contact the sample 6 to be detected), and at the moment, the grating driving motor 9 stops working to perform online exposure on the sample 6 to be detected. When the value of the force sensor 8 reaches a predetermined threshold value, it is determined that all the distance adjustment rods 3 contact the sample substrate 61, and at this time, the grating drive motor 9 stops operating and starts exposure.
The force sensor 8 measures the sum of the pressures of the three distance adjusting rods 3 on the sample 6 to be tested, the preset threshold value of the force sensor can be determined by observing the deformation of the three springs 72 during equipment debugging, the preset threshold value is related to parameters such as the strength of the springs, and the preset threshold value needs to be determined by specific numerical values during equipment debugging. In the process that the motor drives the mask grating to be close to the sample fixing plate, the grating driving motor 9 stops driving after the three springs 72 are obviously deformed, and the value measured by the force sensor 8 can be set as the preset threshold value of the force sensor 8 in normal exposure.
After exposure is finished, the grating support 1 is driven by the grating driving motor 9 to move in the direction away from the sample 6 to be detected, and the sample support 5 is driven by the sample driving motor to change positions. The grating driving motor 9 and the sample driving motor are not the same group of motors, and the movement direction of the mask grating 2 is perpendicular to the movement direction of the sample 6 to be detected, so that the grating driving motor 9 is a one-dimensional motor, and the movement direction of the grating driving motor is close to or far away from the sample 6 to be detected. The sample driving motor comprises two one-dimensional motors which are vertical to each other, and the two-dimensional motors do two-dimensional motion on a plane parallel to the sample 6 to be detected so as to change the exposure position on the sample 6 to be detected, thereby changing the exposure area of the photoresist on the substrate and carrying out the next exposure. When the sample 6 to be measured is exposed, the sample substrate 61 coated with the sample 6 to be measured can be pressed onto the three distance adjusting rods 3 through the three springs 72, so that two advantages are achieved: firstly, the sample substrate 61 coated with the sample 6 to be tested is pressed onto the three distance adjusting rods 3, so that the relative vibration between the mask grating 2 and the sample 6 to be tested can be reduced to the greatest extent through friction force, the stability of an exposure system is improved, and a high-quality exposure graph is obtained; secondly, under the condition that certain pressure is applied, the three springs 72 can adaptively adjust the deformation amount of each spring, so that the sample substrate 61 coated with the sample 6 to be measured is completely attached to the three distance adjusting rods 3, which means that the sample 6 to be measured is positioned on the plane defined by the 3 distance adjusting rods 3, and the parallelism between the photoresist plane to be measured and the mask grating is ensured.
Based on the above-mentioned synchrotron radiation X-ray interference lithography self-adaptive exposure device, the realized synchrotron radiation X-ray interference lithography self-adaptive exposure method comprises:
step S0: providing the synchrotron radiation X-ray interference lithography self-adaptive exposure device;
step S1: the off-line distance adjusting assembly is arranged on a fixed clamp, and is used for off-line distance adjustment and position locking;
the specific structure of the offline distance adjusting assembly is as described above.
In step S1, during offline distance adjustment, a micrometer (or a vernier caliper) is used to measure the distance from the distance adjustment rod 3 to the front surface of the grating support 1 in real time until the distance from the distance adjustment rod 3 to the front surface of the grating support 1 is the vertical working distance of the mask grating, and at this time, the adjustment is completed, and the position of the distance adjustment rod 3 is locked by using the locking screw 4 beside the distance adjustment rod 3.
Step S2: the off-line distance adjusting assembly and the on-line self-adaptive exposure assembly are installed together and are placed in a vacuum cavity;
the specific structure of the in-line adaptive exposure module is as described above.
And step S3: and driving the grating support 1 to move towards the direction close to the sample 6 to be detected by using the grating driving motor 9 until all the three distance adjusting rods 3 contact the sample 6 to be detected, stopping driving the grating support 1 (namely stopping the grating driving motor 9) at the moment, and carrying out online exposure on the sample 6 to be detected.
When the value on the force sensor 8 reaches a predetermined threshold value, it is determined that all the distance adjustment rods 3 have contacted the sample substrate 61.
And step S4: after exposure is finished, the grating support 1 is driven by the grating driving motor 9 to move in the direction away from the sample 6 to be measured, the sample driving motor is used for driving the sample support 5 to change the position, and the step S3 is returned until the measurement of the sample 6 to be measured is finished.
The grating driving motor 9 is a one-dimensional motor, and the movement direction of the grating driving motor is close to or far away from the sample 6 to be measured. The sample driving motor comprises two one-dimensional motors which are vertical to each other, and the two-dimensional motors do two-dimensional motion on a plane parallel to the to-be-detected sample 6 to change the exposure position on the to-be-detected sample 6, so that the exposure area of the to-be-detected sample 6 on the substrate is changed, and the next exposure is carried out.

Claims (10)

1. A synchrotron radiation X-ray interference lithography self-adaptive exposure device is characterized by comprising an off-line distance adjusting component and an on-line self-adaptive exposure component which are detachably arranged together;
the off-line distance adjusting assembly comprises a grating support, a mask grating arranged on the grating support, a distance adjusting rod inserted in the grating support and a locking screw used for locking the distance adjusting rod on the grating support;
the online self-adaptive exposure assembly comprises a sample to be measured and a force sensor, wherein the sample to be measured is in extrusion fit with one end, facing the mask grating, of the distance adjusting rod, and the force sensor is detachably connected with one side, deviating from the mask grating, of the offline distance adjusting assembly, the sample to be measured is arranged on the sample support, and the force sensor is used for measuring the pressure of the sample to be measured in the direction perpendicular to the plane where the sample to be measured is located.
2. The synchrotron radiation X-ray interference lithography self-adaptive exposure apparatus of claim 1, wherein the extending direction of the distance adjusting rod is perpendicular to the plane where the mask grating is located, and two ends of the adjusting rod penetrate through the grating support.
3. The synchrotron radiation X-ray interference lithography adaptive exposure apparatus of claim 2, wherein the extension direction of the locking screw is parallel to the plane of the mask grating.
4. The synchrotron radiation X-ray interference lithography adaptive exposure apparatus of claim 2, wherein the grating support has 3 screw holes on its periphery for a distance adjusting rod to pass through, and the distance adjusting rod is a screw rod engaged with the screw holes.
5. The synchrotron radiation X-ray interference lithography adaptive exposure apparatus of claim 1, wherein the center of the grating support is provided with a light through hole, and a mask grating substrate is provided on a side end face at a position corresponding to the light through hole, the mask grating being prepared on the mask grating substrate.
6. The synchrotron radiation X-ray interference lithography adaptive exposure apparatus of claim 1, wherein the sample holder is coupled to a sample drive motor configured to drive the sample holder to move in a two-dimensional direction parallel to a plane in which a sample to be measured is located.
7. The synchrotron radiation X-ray interference lithography adaptive exposure apparatus of claim 1, wherein a side of the force sensor away from the offline distance adjustment assembly is connected to a grating drive motor through a connection fixing block, the grating drive motor is configured to drive a grating support of the offline distance adjustment assembly to move in a direction perpendicular to a plane in which a sample to be measured is located through the force sensor.
8. The synchrotron radiation X-ray interference lithography self-adaptive exposure apparatus according to claim 1, wherein the sample to be tested is prepared on a sample substrate, the sample substrate is fixed on a sample fixing plate, and one side of the sample fixing plate, which is far away from the sample to be tested, is provided with a plurality of springs and is connected with the sample support through the springs.
9. The synchrotron radiation X-ray interference lithography adaptive exposure apparatus of claim 8, wherein the number of the springs is 3, and 3 springs are uniformly distributed on the sample fixing plate.
10. A synchrotron radiation X-ray interference photoetching self-adaptive exposure method is characterized by comprising the following steps:
step S0: providing a synchrotron radiation X-ray interference lithography adaptive exposure apparatus according to one of claims 1-9;
step S1: installing an off-line distance adjusting component of the synchrotron radiation X-ray interference lithography self-adaptive exposure device on a fixed clamp, and performing off-line distance adjustment and position locking by using the off-line distance adjusting component;
step S2: installing an off-line distance adjusting component and an on-line self-adaptive exposure component of the synchrotron radiation X-ray interference lithography self-adaptive exposure device together, and placing the components into a vacuum cavity;
and step S3: driving the grating support to move towards the direction close to the sample to be detected until all three distance adjusting rods contact the sample to be detected, stopping driving the grating support at the moment, and carrying out online exposure on the sample to be detected;
and step S4: and after the exposure is finished, driving the grating support to move towards the direction away from the sample to be measured, driving the sample support to change the position, and returning to the step S3 until the sample to be measured is measured.
CN202211152104.5A 2022-09-21 2022-09-21 Synchrotron radiation X-ray interference photoetching self-adaptive exposure device and method Pending CN115421359A (en)

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