CN115378409A - Low insertion loss high-power radio frequency switch fast switching circuit - Google Patents
Low insertion loss high-power radio frequency switch fast switching circuit Download PDFInfo
- Publication number
- CN115378409A CN115378409A CN202210821943.5A CN202210821943A CN115378409A CN 115378409 A CN115378409 A CN 115378409A CN 202210821943 A CN202210821943 A CN 202210821943A CN 115378409 A CN115378409 A CN 115378409A
- Authority
- CN
- China
- Prior art keywords
- radio frequency
- control module
- inverter
- analog control
- frequency switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
Landscapes
- Electronic Switches (AREA)
Abstract
The invention belongs to the technical field of radio frequency switches, and particularly provides a low-insertion-loss high-power radio frequency switch fast switching circuit which is used for solving the problem of compromise between low insertion loss, high power and fast switching in the existing SOI switch design. The fast switching circuit is connected to each control signal path between the analog control module and the radio frequency switch module; through an inverter I 1 And an inverter I 2 The delay branch circuit formed by series connection delays and transmits the control signal output by the analog control module to the radio frequency switch module, and meanwhile, the control signal passes through the phase inverter I 3 Rear separately controlled PMOS tube M 1 And NMOS tube M 2 Thereby implementing the positive power rail V DD Through M 1 To filter capacitor C L Of a charging or negative supply rail-V DD Through M 2 To filter capacitor C L The control signal can reach the threshold voltage of the switching of the radio frequency switch more quickly, namely, the switching speed of the switch is increased; in conclusion, the invention obviously improves the switching speed of the radio frequency switch on the premise of ensuring the radio frequency performance of low insertion loss and high power.
Description
Technical Field
The invention belongs to the technical field of radio frequency switches, and particularly provides a low-insertion-loss high-power radio frequency switch fast switching circuit.
Background
With the development of 5G communication, modern wireless mobile terminal devices integrate multiple wireless communication services in different modes and different frequency bands; in order to improve sensitivity and avoid crosstalk, multi-antenna designs are becoming more popular, so that rf switches play an increasingly important role in rf front-end design of wireless mobile terminal devices, and the rf switches are often required to have excellent performance of low insertion loss, high power and fast switching.
At present, an SOI process is used as a new-generation silicon-based process, a layered silicon-insulating substrate-silicon substrate is adopted to replace a CMOS silicon substrate, so as to reduce external parasitic capacitance of a device, thereby improving performance, and a radio frequency switch (referred to as an SOI switch for short) based on the SOI process can obtain better switching performance based on the isolation effect of a high-resistivity substrate and a buried oxide layer. A commonly used rf switch architecture with analog control is shown in fig. 1, and includes: the radio frequency switch module and the analog control module are connected in series and in parallel; wherein, V ctrl And
the external control signal of the radio frequency switch is converted into the control signal of the internal control switch by the analog control module; the LDO stabilizes the voltage of the external power supply to provide bias for the negative voltage charge pump and the three-phase logic conversion circuit, and the negative voltage charge pump is used for generating negative voltage to provide bias for the three-phase logic conversion circuit, so that the three-phase logic conversion circuit can convert V into V ctrl And
conversion to V DD 、0、-V DD Three-phase control signals; when the control signal is positive voltage, the switch is opened, the other path is closed by adopting negative voltage, and because the grid is negative voltage, direct current carriers of a transistor channel are more difficult to move, so that the overall switch performance can be optimized. Furthermore, the control signal entering the gate of the radio frequency switch passes through the filter capacitor C 1 、C 2 And a gate resistance R G1 ～R G4 The filter capacitor is used for preventing a radio-frequency signal passing through the radio-frequency switch from being coupled to the analog control module through a parasitic capacitor of the transistor and influencing the function of the analog control circuit; the value of the grid resistance generally reaches dozens of K omega, and the main functions are as follows: on one hand, the device is used for isolating the radio frequency signal and the direct current signal and preventing the radio frequency signal from influencing the direct current bias circuit; on the other hand, the method is used for preventing the waveform distortion of the radio frequency signal and reducing the radio frequency loss; generally, the larger the gate resistance value, the better the radio frequency signal isolation effect, and the more uniformly the signal applied to the off transistor is distributed between the gate source and the gate drain.
Therefore, in the existing SOI switch design, to improve the power carrying capability of the switch and reduce the insertion loss of the switch, the number of the stacked tubes needs to be increased and the gate resistance needs to be increased, and the RC discharge circuit formed by the gate resistance and the filter capacitor causes a delay in the voltage reaching the gate of the radio frequency switch, thereby affecting the switching speed of the switch.
Disclosure of Invention
The invention aims to provide a low-insertion-loss high-power radio frequency switch fast switching circuit which is connected between an analog control module and a radio frequency switch module so as to solve the problem of compromise between low insertion loss, high power and fast switching in the existing SOI switch design. The invention designs a quick start circuit at the analog control module end, which pre-couples the filter capacitor C of the node by the same control signal L The radio frequency switch is charged and discharged, the radio frequency switch is quickly turned on and off, and on the premise of ensuring the radio frequency performance of low insertion loss and high power, the switching time of the switch is obviously optimized, namely the switching speed of the switch is increased.
In order to realize the purpose, the invention adopts the technical scheme that:
a low insertion loss high power radio frequency switch fast switching circuit comprises: inverter I 1 ～I 3 PMOS tube M 1 NMOS transistor M 2 Current limiting resistor R 1 And R 2 Characterized in that the inverter I 1 And an inverter I 2 Connected in series to serve as a delay branch, an inverter I 1 The input end of the analog control module is connected with the control signal output end of the analog control module and the phase inverter I 2 The output end of the filter is connected with the control end of the radio frequency switch module, and a filter capacitor C is connected between the two ends L Said inverter I 1 The input end of the analog control module is connected with the control signal output end of the analog control module, and the output end of the analog control module is connected with the PMOS tube M 1 And NMOS tube M 2 The grid of (1), the PMOS tube M 1 Source electrode of the analog control module is connected to a positive power supply rail V of the analog control module DD The NMOS tube M 2 Source electrode of the analog control module is connected with a negative power supply rail-V of the analog control module DD PMOS transistor M 1 Drain electrode of and NMOS tube M 2 Is connected with the drain electrode of the inverter I 2 To the output of (1).
Further, the inverter I 1 ～I 3 The same device is adopted to ensure that the delay time of the delay branch is the same; current limiting resistor R 1 And R 2 The same device is adopted to ensure that the working currents of the upper branch and the lower branch are the same; in addition, the switch tube PMOS tube M 1 And NMOS tube M 2 The size of the switch tube is large enough to ensure that the switch tube is not damaged when current flows through the MOS tube.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a low-insertion-loss high-power radio frequency switch fast switching circuit which is connected to each control signal path between an analog control module and a radio frequency switch module; through an inverter I 1 And an inverter I 2 The delay branch circuit formed by series connection delays and transmits the control signal output by the analog control module to the radio frequency switch module, and meanwhile, the control signal output by the analog control module passes through the phase inverter I 3 Then respectively controlling PMOS tubes M 1 And NMOS tube M 2 Thereby implementing the positive power rail V DD Through PMOS tube M 1 To filter capacitor C L Positive voltage pre-charge (charge) or negative supply rail-V DD Through NMOS tube M 2 To filter capacitor C L To the filter capacitor C L Results in a filter capacitance C L The RC time formed by the parasitic resistor is shortened, so that the control signal reaching the radio frequency switch module through the delay branch can more quickly reach the threshold voltage of the switching of the radio frequency switch, namely, the switching speed of the switch is increased; in conclusion, on the premise of ensuring the radio frequency performance of low insertion loss and high power, the invention obviously optimizes the switching time of the switch, improves the switching speed of the radio frequency switch, and perfectly solves the compromise problem of low insertion loss, high power and quick switching in the design of the conventional SOI switch; in addition, a fast switching circuit is introduced on the basis of the traditional analog control module and the radio frequency switch module, so that the stability of the circuit is ensured, the design cost for modifying the traditional module is saved, and the risk of the circuit is avoided.
Drawings
Fig. 1 is a schematic diagram of a conventional rf switch with analog control.
Fig. 2 is a schematic diagram of a fast switching circuit of the low insertion loss high power rf switch of the present invention.
Fig. 3 is a schematic diagram of control signals of the fast switching circuit of the low insertion loss high power rf switch of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail with reference to the accompanying drawings and examples.
The present embodiment provides a low insertion loss high power rf switch fast switching circuit, as shown in fig. 3, which is independent of the rf switch module and the analog control module, and is connected to each control signal path between the analog control module and the rf switch module; the method specifically comprises the following steps: inverter I 1 ～I 3 PMOS transistor M 1 NMOS transistor M 2 Current limiting resistor R 1 And R 2 Said inverter I 1 And an inverterI 2 Connected in series to serve as a delay branch, an inverter I 1 The input end of the analog control module is connected with the control signal output end of the analog control module and the phase inverter I 2 The output end of the filter is connected with the control end of the radio frequency switch module, and a filter capacitor C is connected between the two ends L Said inverter I 1 The input end of the analog control module is connected with the control signal output end of the analog control module, and the output end of the analog control module is connected with the PMOS tube M 1 And NMOS tube M 2 The grid of (1), the PMOS tube M 1 Source electrode of the transistor through a current limiting resistor R 1 Positive power rail V of back connection analog control module DD The NMOS tube M 2 Source electrode of the transistor through a current limiting resistor R 2 Negative power supply rail-V of back connection analog control module DD PMOS transistor M 1 Drain electrode of and NMOS tube M 2 Is connected with the drain electrode of the inverter I 2 To the output of (1).
Further, the analog control module and the rf switch module adopt the conventional structure as shown in fig. 3, wherein the LDO linear regulator is used to stabilize the power voltage to the positive power rail V required by the internal rf switch DD (2.5V in this example); the positive voltage output by the LDO provides positive voltage bias for the three-phase logic conversion circuit and the negative voltage charge pump, and the negative voltage charge pump converts the positive voltage into a negative power supply rail-V required by the internal radio frequency switch DD (2.5V in this example); the negative voltage output by the negative voltage charge pump provides negative voltage bias for the three-phase logic conversion circuit; the three-phase logic conversion circuit inputs an external control signal V ctrl And
(V ctrl and
typically 0V and 3.3V) into positive and negative voltage control signals that internally drive the switching of the rf switch to achieve a high performance switch design with high power and low insertion loss.
In terms of working principle:
each path of control signal between the analog control module and the radio frequency switch module is connected with the low-insertion-loss high-power radio frequency switchA fast switching circuit; taking a single control signal as an example, in the low-insertion-loss high-power radio frequency switch rapid switching circuit, the phase inverter I 1 ～I 3 For buffering control signals, which pass through I 3 Two signals S are divided 1 And S 2 ，S 1 、S 2 Same frequency and opposite phase as the control signal, I 1 And I 2 For delaying the control signal so that I 2 Output signal slower than S 1 And S 2 ；
When the control signal output by the three-phase logic conversion circuit is V DD Switch to-V DD When the voltage is high, the signal output by the fast switching circuit of the low-insertion-loss high-power radio frequency switch is also V DD Switch to-V DD (ii) a Due to the signal S 1 And S 2 Faster than I 2 Is output so that the signal S 1 And signal S 2 First reaches PMOS tube M 1 And NMOS tube M 2 (ii) a Due to the control signal being switched to-V DD So that signal S 1 And signal S 2 from-V DD Switch to V DD Therefore, PMOS transistor M 1 Closed NMOS transistor M 2 On, the MOS transistor has very low on-resistance, so that the negative power supply rail-V DD Through NMOS tube M 2 To filter capacitor C L The upper electrode plate is filled with current to realize negative voltage pre-charging on the filter capacitor, so that the filter capacitor C before the control signal is switched L The positive charge accumulated above is quickly eliminated by the negative voltage;
similarly, when the control signal output by the three-phase logic conversion circuit is changed from-V DD Switch to V DD Time, signal S 1 And signal S 2 From V DD Switch to-V DD Therefore, PMOS transistor M 1 Starting NMOS tube M 2 Off, positive power rail V DD Through PMOS tube M 1 To filter capacitor C L The upper polar plate is filled with current to pre-charge the filter capacitor with positive voltage, so that the filter capacitor C is switched before the control signal is switched L The accumulated negative charge is quickly eliminated by the positive voltage;
thus, the control signal passes through I 1 And I 2 Then, the filter capacitorC L From I 2 The obtained current is reduced, and the filter capacitor C L The charging current mainly being from the power supply rail V DD and-V DD The control signal is provided, but not provided by an analog control module in a chip in the traditional structure, so that the load capacity of the internal analog control module is greatly reduced, and the control signal can reach the threshold voltage of switching of the radio frequency switch more quickly, namely the switching speed of the switch is increased; specifically, the schematic diagram of the control signal is shown in fig. 3, and at the rising edge of the control signal, the PMOS transistor M 1 Opening NMOS tube M 2 Off, positive power rail V DD To filter capacitor C L Precharging, optimizing the rising edge time to be T 1 (ii) a At the falling edge of the control signal, the PMOS transistor M 1 Closed NMOS transistor M 2 On, negative supply rail-V DD To filter capacitor C L Precharging, optimizing falling rising edge time to be T 2 (ii) a I.e. the optimum time during the entire switching process is T = T 1 +T 2 。
In addition, the RF switch fast switching circuit of the present invention has one conducting transistor for switching control signal, so that the PMOS transistor M is connected to the power source 1 NMOS transistor M 2 The size of (2) is large, and the large-size transistor contributes to improving the current carrying capacity; meanwhile, in order to reduce power consumption, in a transistor (PMOS transistor M) 1 NMOS transistor M 2 ) And power supply rail (positive power supply rail V) DD Negative power supply rail-V DD ) A current limiting resistor R is added between 1 And R 2 When PMOS transistor M 1 Or NMOS tube M 2 When turned on, current limiting resistor R 1 And R 2 The branch current is reduced, and further the power consumption is reduced; it should be noted that: the reduction in branch current will cause the filter capacitor C to be injected through the power rail, as compared to the case where an infinite current resistor is present L Current reduction of, i.e. current limiting resistor R 1 And R 2 The charging speed is slightly reduced, but the switching speed is higher than that of the traditional structure; therefore, the current limiting resistor R 1 And R 2 The value is adaptively selected according to the maximum current and the upper limit of power consumption which can be borne by the branch circuit during design.
In summary, the fast switching circuit is added between the analog control module and the radio frequency switch module to rapidly charge the node filter capacitor, so that the switching speed of the traditional high-performance radio frequency switch is greatly optimized; the existing analog control module and the existing radio frequency switch module cannot be changed, the stability of the circuit is improved, the design cost for modifying the existing circuit is saved, and the circuit risk is avoided.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (2)
1. A low insertion loss high power radio frequency switch fast switching circuit comprises: inverter I 1 ～I 3 PMOS transistor M 1 NMOS transistor M 2 And a current limiting resistor R 1 And R 2 Characterized in that the inverter I 1 And an inverter I 2 Connected in series to serve as a delay branch, an inverter I 1 The input end of the analog control module is connected with the control signal output end of the analog control module and the phase inverter I 2 The output end of the filter is connected with the control end of the radio frequency switch module, and a filter capacitor C is connected between the two ends L Said inverter I 1 The input end of the analog control module is connected with the control signal output end of the analog control module, and the output end of the analog control module is connected with the PMOS tube M 1 And NMOS tube M 2 The grid of (1), the PMOS tube M 1 Source electrode of the analog control module is connected to a positive power supply rail V of the analog control module DD The NMOS tube M 2 Source electrode of the analog control module is connected with a negative power supply rail-V of the analog control module DD PMOS transistor M 1 Drain of (1) and NMOS tube M 2 Is connected with the drain electrode of the inverter I 2 To the output of (1).
2. The low insertion loss high power rf switch fast switching circuit of claim 1, wherein said inverter I 1 ～I 3 Using the same device, said current-limiting resistor R 1 And R 2 By usingThe same device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210821943.5A CN115378409A (en) | 2022-07-12 | 2022-07-12 | Low insertion loss high-power radio frequency switch fast switching circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210821943.5A CN115378409A (en) | 2022-07-12 | 2022-07-12 | Low insertion loss high-power radio frequency switch fast switching circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115378409A true CN115378409A (en) | 2022-11-22 |
Family
ID=84061582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210821943.5A Pending CN115378409A (en) | 2022-07-12 | 2022-07-12 | Low insertion loss high-power radio frequency switch fast switching circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115378409A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116301169A (en) * | 2023-05-23 | 2023-06-23 | 芯动微电子科技(珠海)有限公司 | Bias circuit and comparator |
-
2022
- 2022-07-12 CN CN202210821943.5A patent/CN115378409A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116301169A (en) * | 2023-05-23 | 2023-06-23 | 芯动微电子科技(珠海)有限公司 | Bias circuit and comparator |
| CN116301169B (en) * | 2023-05-23 | 2023-08-15 | 芯动微电子科技(珠海)有限公司 | Bias circuit and comparator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10038406B2 (en) | Variable switched DC-to-DC voltage converter | |
| US8829979B2 (en) | Power-efficient multi-mode charge pump | |
| CN110912542B (en) | Low-power consumption dynamic bias comparator | |
| CN107733381B (en) | High-efficiency high-gain Doherty stacked power amplifier | |
| CN108736866B (en) | CMOS SOI radio frequency switch circuit | |
| CN102185596A (en) | Bootstrapping sampling switch applied to high-speed and high-linearity analog-to-digital converter | |
| US20230216490A1 (en) | Switching time reduction of an rf switch | |
| CN115378409A (en) | Low insertion loss high-power radio frequency switch fast switching circuit | |
| CN105897264B (en) | Fast turn-off/on source follower | |
| CN203708221U (en) | Broadband sample hold circuit used for front end of successive-approximation analog-to-digital converter | |
| Lollio et al. | Class-G headphone driver in 65nm CMOS technology | |
| CN101610067B (en) | Frequency mixer | |
| CN111342829B (en) | Broadband radio frequency switch and switching method thereof, switch module and circuit module | |
| CN104836559A (en) | IGBT drive gate pole rising and falling edge voltage adjustable control circuit | |
| CN110086456B (en) | SOI CMOS radio frequency switch circuit structure only needing positive voltage bias | |
| US20230246639A1 (en) | Switching time reduction of an rf switch | |
| CN101394173A (en) | Single-pole double-throw switch based on enhanced PHEMT | |
| WO2022083497A1 (en) | Envelope tracking power supply circuit and electronic device | |
| CN115378411A (en) | Power-free wide-swing voltage control high-performance radio frequency integrated switch | |
| CN117040504A (en) | Radio frequency switch circuit | |
| CN206559232U (en) | A kind of boost conversion circuit | |
| CN109768696B (en) | Variable on-resistance switching device for a boost converter for thermoelectric energy harvesting | |
| Yu et al. | Design considerations of charge pump for antenna switch controller with SOI CMOS technology | |
| CN113300708B (en) | Broadband input signal buffer applied to ultra-high-speed analog-to-digital converter | |
| WO2024100830A1 (en) | Power amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |