CN115360186A - CHIP LED packaging structure and processing technology - Google Patents
CHIP LED packaging structure and processing technology Download PDFInfo
- Publication number
- CN115360186A CN115360186A CN202211017826.XA CN202211017826A CN115360186A CN 115360186 A CN115360186 A CN 115360186A CN 202211017826 A CN202211017826 A CN 202211017826A CN 115360186 A CN115360186 A CN 115360186A
- Authority
- CN
- China
- Prior art keywords
- metal
- conductive copper
- fan
- insulating layer
- metal pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 32
- 238000005516 engineering process Methods 0.000 title claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 172
- 229910052751 metal Inorganic materials 0.000 claims abstract description 172
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 134
- 229910052802 copper Inorganic materials 0.000 claims abstract description 118
- 239000010949 copper Substances 0.000 claims abstract description 118
- 239000011324 bead Substances 0.000 claims description 41
- 239000007787 solid Substances 0.000 claims description 20
- 238000005520 cutting process Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000005553 drilling Methods 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 230000003064 anti-oxidating effect Effects 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 6
- 239000003984 copper intrauterine device Substances 0.000 description 17
- 238000009434 installation Methods 0.000 description 15
- 238000003466 welding Methods 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000004073 vulcanization Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 238000005429 filling process Methods 0.000 description 4
- 239000012466 permeate Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 2
- 241001124569 Lycaenidae Species 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 235000014987 copper Nutrition 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The application relates to the field of LEDs, in particular to a CHIP LED packaging structure and a processing technology, which comprises a first metal layer, a rectangular insulating layer and a second metal layer which are sequentially stacked, wherein the first metal layer comprises a plurality of first metal bonding pads arranged on one side of the insulating layer, the second metal layer comprises a plurality of second metal bonding pads arranged on one side, far away from the first metal bonding pads, of the insulating layer, and the positions of the first metal bonding pads and the positions of the second metal bonding pads are in one-to-one correspondence on the insulating layer; the insulating layer is provided with a first metal pad and a second metal pad, the first metal pad is provided with a first conductive copper, the second metal pad is provided with a second conductive copper, the first conductive copper is connected with the second metal pad, the second conductive copper is connected with the first metal pad, and the second conductive copper is connected with the second metal pad. This application has the effect that improves the reliability of lamp pearl.
Description
Technical Field
The application relates to the field of LEDs, in particular to a CHIP LED packaging structure and a processing technology.
Background
In the LED packaging industry, how to further improve the reliability of the LED packaging structure is a hotspot and difficulty in the related fields. With the development of lighting technology and LED display screens, the requirements on the performances of air tightness, reliability and the like of LED lamp beads are higher and higher.
In the present LED packaging technology, most of support structures are metal-inlaid in a cup insulator, a metal pin extends out of the insulator and is bent to the bottom, the support structure limits the shape of a dispensing lens on one hand, the larger problem is that gaps cannot be avoided between the support insulator and metal, the support air tightness is poor, outside gas and moisture can easily permeate into the interior of a lamp bead packaging body, the problems of internal oxidation and vulcanization of a lamp bead and the like are caused, the aging of the lamp bead is accelerated, the reliability and the service life of the lamp bead are reduced, and the situation is further improved.
Disclosure of Invention
In order to improve the reliability of the lamp beads, the application provides a CHIP LED packaging structure and a processing technology.
In a first aspect, the CHIP LED package structure provided by the present application adopts the following technical scheme:
a CHIP LED packaging structure comprises a first metal layer, a rectangular insulating layer and a second metal layer which are sequentially stacked, wherein the first metal layer comprises a plurality of first metal bonding pads arranged on one side of the insulating layer, the second metal layer comprises a plurality of second metal bonding pads arranged on one side, far away from the first metal bonding pads, of the insulating layer, and the positions of the first metal bonding pads and the positions of the second metal bonding pads are in one-to-one correspondence on the insulating layer; the insulating layer is provided with a first metal pad and a second metal pad, the first metal pad is provided with a first conductive copper, the second metal pad is provided with a second conductive copper, the first conductive copper is connected with the second metal pad, the second conductive copper is connected with the first metal pad, and the second conductive copper is connected with the second metal pad.
Through adopting above-mentioned technical scheme, through pack solid copper as electrically conductive copper in the through-hole, through electrically conductive copper can the circular telegram between first metal level and the second metal level, at the filling in-process, can fill the through-hole completely, can not leave the clearance, thereby ensure in the use of lamp pearl, can reduce the inside probability of external gas and moisture easy infiltration lamp pearl packaging body, reduce the inside oxidation of lamp pearl and the appearance of vulcanization scheduling problem, thereby improve the reliability of lamp pearl in the use.
Optionally, the insulating layer is provided with a fan-shaped hole along a side surface of one side of the length direction in a penetrating manner, the opening direction of the fan-shaped hole is perpendicular to the plane where the first metal pad is located, the fan-shaped hole penetrates through the first metal pad and the second metal pad corresponding to the first metal pad, second conductive copper is arranged in the fan-shaped hole, one end of the second conductive copper is abutted to the first metal pad, the other end of the second conductive copper is abutted to the second metal pad, and the second conductive copper is exposed out of the side surface of the insulating layer.
Through adopting above-mentioned technical scheme, through filling solid copper and form the electrically conductive copper of second that exposes on the insulating layer in the fan-shaped hole, in the lamp pearl use of this application, according to the mounting means of difference, can utilize the electrically conductive copper of second to expose the part and go on, carry out the side subsides with the lamp pearl to increase the application scope of this application lamp pearl.
Optionally, fan-shaped grooves are arranged on one side, away from the first metal pad, of the insulating layer side by side, the two fan-shaped grooves are located on two sides of the fan-shaped hole, third conductive copper is arranged in the fan-shaped hole and is abutted to the corresponding second metal pad, and the third conductive copper is exposed out of the side face of the insulating layer.
Through adopting above-mentioned technical scheme, through the electrically conductive copper of the intussuseption solid copper of sector groove conduct third, carry out the in-process that the side was pasted with the lamp pearl of this application, through electrically conductive copper of second and electrically conductive copper of third weld, alright in order to realize the side subsides of lamp pearl to can increase the welding area of lamp pearl at corresponding installation position, thereby improve stability, and through the welding of two electrically conductive copper of third, form the circular telegram of whole lamp pearl at corresponding installation position.
Optionally, a first metal pad through which the fan-shaped hole penetrates is set as a chip metal pad, the chip metal pad is provided with a driving chip, one of the first metal pad is set as an installation metal pad, and the installation metal pad is provided with a plurality of light-emitting chips.
Through adopting above-mentioned technical scheme, through installing luminous chip on chip metal pad installation driver chip, installation metal pad to the single-point single-control in the lamp pearl use is realized.
Optionally, an encapsulation adhesive for wrapping all the first metal pads is disposed on the insulating layer.
Through adopting above-mentioned technical scheme, after all pads and the chip mounting on the lamp pearl finished, through the encapsulation glue on the insulating layer, can increase the luminous effect of luminous chip on the one hand, on the other hand can play the guard action to lamp pearl self in the subsequent use of lamp pearl.
In a second aspect, the present application provides a processing technology of a CHIP LED package structure, which adopts the following technical scheme:
a processing technology of a CHIP LED packaging structure is characterized by comprising the following steps:
s1, dividing a material plate into lamp areas side by side, wherein each lamp area is set as an insulating layer;
s2, respectively packaging a first metal layer and a second metal layer on two sides of each insulating layer, wherein the first metal layer comprises a plurality of first metal bonding pads, and the second metal layer comprises a plurality of second metal bonding pads;
s3, punching through holes at the positions of the four corners of the insulating layer, wherein the through holes penetrate through the first metal bonding pad and the second metal bonding pad at the positions of the four corners of the insulating layer, and the through holes between the adjacent insulating layers are mutually conducted;
and S4, drilling fan-shaped holes in the side face of one side of the insulating layer along the length direction in a penetrating mode, drilling fan-shaped grooves in the side face of one side of the insulating layer along the length direction, and drilling two fan-shaped grooves and locating at two sides of the fan-shaped holes.
S5, filling solid copper in all the through holes, the fan-shaped holes and the fan-shaped grooves, wherein first conductive copper is arranged in the through holes, second conductive copper is arranged in the fan-shaped holes, and third conductive copper is arranged in the fan-shaped grooves;
s6, cutting the material plate according to the position of each lamp area to form an independent lamp bead support;
and S7, packaging and packaging glue on each lamp bead support.
By adopting the technical scheme, the through hole is filled with the solid copper as the conductive copper, the first metal layer and the second metal layer can be electrified through the conductive copper, the through hole can be completely filled in the filling process, no gap is left, and therefore the probability that outside gas and moisture easily permeate into the lamp bead packaging body can be reduced in the using process of the lamp bead, the problems of oxidation, vulcanization and the like in the lamp bead are reduced, and the reliability of the lamp bead in the using process is improved; in addition, the exposed second conductive copper and the exposed third conductive copper can be laterally attached to the corresponding mounting positions in the using stage of the lamp beads, the mounting modes of the lamp beads can be increased on one hand by the second conductive copper and the third conductive copper, welding positions are provided, and the two third conductive copper can ensure the electrification and normal use of the lamp beads on the other hand.
Optionally, after the step S5, the following steps are further performed:
and (3) enabling the first conductive copper, the second conductive copper and the third conductive copper to protrude out of the insulating layer part for polishing.
Through adopting above-mentioned technical scheme, through the step of polishing with first electrically conductive copper, the electrically conductive copper of second, the electrically conductive copper of third, can ensure to keep the parallel and level with the book reason layer in the position of filling solid copper, avoid having the arch on solid copper surface, influence subsequent electroplating and welding.
Optionally, during the cutting process of the material plate, the following steps are performed:
and when the fan-shaped hole is cut, a four-fifth area of the fan-shaped hole is left on the chip metal bonding pad.
Through adopting above-mentioned technical scheme, in the cutting process, stay the area of fan-shaped hole fourth of fifths on chip metal bonding pad, remaining fifth solid copper is carrying out the cutting process, as the cutting waste material, can ensure to conduct chip metal bonding pad and corresponding second metal bonding pad.
Optionally, after forming a plurality of lamp beads after the step S6, the following steps are further performed:
and electroplating all the lamp beads one by one to form an anti-oxidation layer on the first conductive copper, the second conductive copper and the third conductive copper.
By adopting the technical scheme, the anti-oxidation layer is formed by electroplating, so that the subsequent welding process can be ensured, and the power supply to the lamp bead can be realized.
In summary, the present application includes at least one of the following beneficial technical effects:
through filling solid copper in the through-hole as electrically conductive copper, through electrically conductive copper can first metal level and the circular telegram between the second metal level, in the filling process, can pack the through-hole completely, can not leave the clearance to ensure in the use of lamp pearl, can reduce the probability that external gas and moisture permeate into lamp pearl packaging body inside easily, reduce the appearance of the inside oxidation of lamp pearl and vulcanization scheduling problem, thereby improve the reliability of lamp pearl in the use.
Can utilize the electrically conductive copper of second to expose the part and go on, carry out the side subsides with the lamp pearl to increase the application scope of this application lamp pearl.
And the whole lamp bead is electrified at the corresponding installation position by welding the two third conductive coppers; the welding area of the lamp beads at the corresponding mounting positions can be increased, so that the stability is improved.
Drawings
FIG. 1 is a schematic view of the overall structure of a lamp bead in the embodiment of the present application;
fig. 2 is a schematic structural view of a side of the second metal pad in the embodiment of the present application.
Description of reference numerals:
1. an insulating layer; 2. a first metal pad; 3. a second metal pad; 4. a through hole; 5. a first conductive copper; 6. a sector hole; 7. a second conductive copper; 8. a sector groove; 9. a third conductive copper; 10. a chip metal pad; 11. a driving chip; 12. mounting a metal pad; 13. a light emitting chip.
Detailed Description
The present application will be described in further detail below.
In a first aspect, the present application provides a CHIP LED package structure, including a first metal layer, a rectangular insulating layer 1, and a second metal layer, which are sequentially stacked, in an embodiment of the present application, the first metal layer includes a plurality of first metal pads 2 packaged on one side of the insulating layer 1, and the number of the first metal pads 2 is 5, and the shape and size of each first metal pad 2 are different; in addition, in the embodiment of the present application, the second metal layer includes a plurality of second metal pads 3 packaged on one side of the insulating layer 1 away from the first metal pads 2, the number of the second metal pads 3 corresponds to that of the first metal pads 2, and the positions of the first metal pads 2 correspond to that of the second metal pads 3 on the insulating layer 1.
In order to realize the circular telegram between first metal pad 2 and the second metal pad 3 that corresponds, through-hole 4 has been seted up in the penetration on 1 four angles in insulating layer, and through-hole 4 is the second metal pad 3 that first metal pad 2 and first metal pad 2 correspond for the first run-through, through-hole 4 intussuseption is filled with first electrically conductive copper 5, and first electrically conductive copper 5 adopts solid copper, and 5 one end of first electrically conductive copper and 2 butt of first metal pad, the 5 other ends of first electrically conductive copper and 3 butt of second metal pad, after filling first electrically conductive copper 5 in through-hole 4, need polish first electrically conductive copper 5, ensure that 5 surfaces of first electrically conductive copper remain to flush, there can not be the arch, avoid influencing follow-up lamp pearl welded stability.
The first conductive copper 5 is filled in the four corners, so that the first metal pad 2 and the second metal pad 3 on the four corners of the insulating layer 1 can be conducted; in addition, in order to realize the conduction between the middle first metal pad 2 and the middle second metal pad 3, a fan-shaped hole 6 penetrates through the side surface of one side of the insulating layer 1 along the length direction, the opening direction of the fan-shaped hole 6 is perpendicular to the plane of the first metal pad 2, the fan-shaped hole 6 penetrates through the first metal pad 2 and the second metal pad 3 corresponding to the first metal pad 2, second conductive copper 7 is filled in the fan-shaped hole 6, the second conductive copper 7 is made of solid copper, one end of the second conductive copper 7 is abutted against the first metal pad 2, the other end of the second conductive copper 7 is abutted against the second metal pad 3 and is consistent with the first metal pad 2, after the second conductive copper 7 is filled in the through hole 4, the second conductive copper 7 needs to be polished, the surface of the second conductive copper 7 is ensured to be flush, no bulge exists, and the stability of the subsequent lamp bead welding is prevented from being influenced; simultaneously the second electrically conductive copper 7 exposes in insulator layer side, exposes through with second electrically conductive copper 7 in insulating layer 1 side, is carrying out the installation with the lamp pearl in-process, not only can be through second metal level at installation position welded mounting, can also carry out the side subsides with the lamp pearl through the part that exposes of second electrically conductive copper 7 to increase the application scope of this application lamp pearl.
When the lamp pearl can carry out the side and paste, also need the circular telegram of guarantee lamp pearl, so keep away from first metal pad 2 one side at insulating layer 1 and seted up quadrant groove 8 side by side, and two quadrant groove 8 are located quadrant 6 both sides, quadrant 6 intussuseption is filled with electrically conductive copper 9 of third, and the same is said, electrically conductive copper 9 of third adopts solid copper, and two electrically conductive copper 9 of third respectively with the 3 butts of second metal pad that correspond, and electrically conductive copper 9 of third exposes in insulator layer side, can increase the welding area of lamp pearl when the side is pasted, thereby increase the fastness of lamp pearl, when electrically conductive copper 9 of two third carries out the side at the lamp pearl, can do the positive negative pole of lamp pearl and carry out electrically conductive input.
In the embodiment of the present application, the first metal pad 2 through which the fan-shaped hole 6 penetrates is a chip metal pad 10, and a driving chip 11 is mounted on the chip metal pad 10, wherein one first metal pad 2 is a mounting metal pad 12, and a plurality of light emitting chips are mounted on the mounting metal pad 12, and in the embodiment of the present application, there are three light emitting chips; through installing luminous chip on chip metal pad 10 installation driver chip 11, installation metal pad 12 to realize the single-point single-control in the lamp pearl use, the lamp pearl can increase luminous effect in the use.
In order to protect the lamp beads, packaging glue (not shown in the figure) wrapping all the first metal pads 2 is packaged on the insulating layer 1, the packaging glue can increase the light emitting effect of the light emitting chip on one hand, and on the other hand, the lamp beads can be protected in the subsequent use process of the lamp beads.
The implementation principle of the CHIP LED package structure in the embodiment of the present application is as follows: solid copper is filled in the through hole 4 to serve as conductive copper, the first metal layer and the second metal layer can be electrified through the conductive copper, the through hole 4 can be completely filled in the filling process, no gap is reserved, and therefore the probability that outside gas and moisture easily penetrate into the lamp bead packaging body can be reduced, the problems of oxidation, vulcanization and the like in the lamp bead are reduced, and the reliability of the lamp bead in the using process is improved; and through the electrically conductive copper 7 of second and the electrically conductive copper 9 of third that set up, in the use, the lamp pearl also can adopt the mode of side subsides to weld the installation to the electrically conductive with the electrically conductive copper 9 of third of second also can not have the clearance, when can increase the mounting means that the lamp pearl carries out the side subsides, can also guarantee the reliability of lamp pearl in the use.
In a second aspect, the processing technology of the CHIP LED package structure provided by the present application adopts the following technical scheme:
a processing technology of a CHIP LED packaging structure comprises the following steps:
s1, divide the material version into lamp area side by side, an individual lamp pearl support all needs to be done in every lamp area to Zhou Ce at the material version sets up the cutting prompt line in advance, and in this application embodiment, every lamp area is insulating layer 1.
And S2, respectively packaging a first metal layer and a second metal layer on two sides of each insulating layer 1, wherein the first metal layer comprises 5 first metal bonding pads 2, the second metal layer comprises 5 second metal bonding pads 3, and the positions of the first metal bonding pads 2 correspond to the positions of the second metal bonding pads 3 one by one.
And S3, punching through holes 4 at the positions of the four corners of the insulating layer 1, wherein the through holes 4 penetrate through the first metal pad 2 and the second metal pad 3 at the positions of the four corners of the insulating layer 1, and the through holes 4 between the adjacent insulating layers 1 on the material plate are mutually communicated.
And S4, drilling fan-shaped holes 6 at the side surface of one side of the insulating layer 1 along the length direction in a penetrating manner, drilling fan-shaped grooves 8 at the side surface of one side of the insulating layer 1 along the length direction in a penetrating manner, wherein the two fan-shaped grooves 8 are drilled and are positioned at two sides of the fan-shaped holes 6, and the fan-shaped grooves 8 do not penetrate through the insulating layer 1.
S5, filling solid copper in all the through holes 4, the fan-shaped holes 6 and the fan-shaped grooves 8, wherein first conductive copper 5 is arranged in the through holes 4, second conductive copper 7 is arranged in the fan-shaped holes 6, and third conductive copper 9 is arranged in the fan-shaped grooves 8;
first electrically conductive copper 5, the electrically conductive copper 7 of second, after electrically conductive copper 9 of third filled, because there may be the arch on the solid copper surface of filling in corresponding position, in order to guarantee the stability after follow-up lamp pearl installation and the welding, polish first electrically conductive copper 5, the electrically conductive copper 7 of second, the electrically conductive copper 9 of third bulge insulating layer 1 part, can ensure to keep the parallel and level with the book reason layer in the position of filling solid copper, avoid having the arch on solid copper surface, influence subsequent electroplating and welding.
S6, the material plate is cut according to the position of each lamp area to form an independent lamp bead support, in the cutting process, the material plate is cut according to cutting lines arranged in advance, after the material plate is cut, the four fifth area of the fan-shaped hole 6 is left on the chip metal pad 10, the remaining one fifth area of solid copper is cut to serve as cutting waste, and the chip metal pad 10 and the corresponding second metal pad 3 can be conducted through the cutting.
And after forming lamp pearl one by one, still need electroplate one by one to every lamp pearl, form the oxidation prevention coating at first conductive copper 5, second conductive copper 7, third conductive copper 9, can ensure subsequent welding process, can realize the power supply to the lamp pearl.
S7, packaging and packaging adhesive on each lamp bead support; wherein, the packaging glue can increase the luminous effect of light-emitting chip on the one hand, and on the other hand can play the guard action to lamp pearl self in the subsequent use of lamp pearl.
The implementation principle of the processing technology of the CHIP LED packaging structure in the embodiment of the application is as follows: solid copper is filled in the through hole 4 to serve as conductive copper, the first metal layer and the second metal layer can be electrified through the conductive copper, the through hole 4 can be completely filled in the filling process, no gap is reserved, and therefore the probability that outside gas and moisture easily penetrate into the lamp bead packaging body can be reduced, the problems of oxidation, vulcanization and the like in the lamp bead are reduced, and the reliability of the lamp bead in the using process is improved; in addition, the second conductive copper 7 and the third conductive copper 9 which are exposed can be used for laterally pasting the lamp beads on corresponding installation positions in the using stage of the lamp beads, the second conductive copper 7 and the third conductive copper 9 can increase the installation mode of the lamp beads, welding positions are provided, and the two third conductive copper 9 can ensure the electrification of the lamp beads and can be used normally.
The above embodiments are preferred embodiments of the present application, and the protection scope of the present application is not limited by the above embodiments, so: equivalent changes in structure, shape and principle of the present application shall be covered by the protection scope of the present application.
Claims (10)
1. The CHIP LED packaging structure is characterized by comprising a first metal layer, a rectangular insulating layer (1) and a second metal layer which are sequentially stacked, wherein the first metal layer comprises a plurality of first metal pads (2) arranged on one side of the insulating layer (1), the second metal layer comprises a plurality of second metal pads (3) arranged on one side, far away from the first metal pads (2), of the insulating layer (1), and the positions of the first metal pads (2) correspond to the positions of the second metal pads (3) on the insulating layer (1) in a one-to-one manner; the insulating layer (1) is provided with through holes (4) at four corners in a penetrating manner, the through holes (4) penetrate through the first metal pad (2) and the second metal pad (3) corresponding to the first metal pad (2), first conductive copper (5) is arranged in the through holes (4), one end of the first conductive copper (5) is abutted against the first metal pad (2), and the other end of the first conductive copper (5) is abutted against the second metal pad (3).
2. The CHIP LED package structure of claim 1, wherein a fan-shaped hole (6) is formed through the insulating layer (1) along a side surface of one side in a length direction, an opening direction of the fan-shaped hole (6) is perpendicular to a plane of the first metal pad (2), the fan-shaped hole (6) penetrates through the first metal pad (2) and the second metal pad (3) corresponding to the first metal pad (2), second conductive copper (7) is disposed in the fan-shaped hole (6), one end of the second conductive copper (7) abuts against the first metal pad (2), the other end of the second conductive copper (7) abuts against the second metal pad (3), and the second conductive copper (7) is exposed out of the side surface of the insulating layer.
3. The CHIP LED package structure of claim 2, wherein the insulating layer (1) is provided with fan-shaped grooves (8) side by side on a side away from the first metal pads (2), two fan-shaped grooves (8) are located on two sides of the fan-shaped hole (6), a third conductive copper (9) is provided in the fan-shaped hole (6), and the two third conductive copper (9) are respectively abutted against the corresponding second metal pads (3), and the third conductive copper (9) is exposed out of a side surface of the insulating layer.
4. CHIP LED package structure according to claim 1, wherein the first metal pad (2) through which the fan-shaped hole (6) passes is configured as a CHIP metal pad (10), the CHIP metal pad (10) is configured with a driver CHIP (11), wherein one of the first metal pads (2) is configured as a mounting metal pad (12), and the mounting metal pad (12) is configured with a plurality of light emitting CHIPs (13).
5. CHIP LED package structure according to claim 3, wherein the insulating layer (1) is provided with an encapsulation glue for encapsulating all the first metal pads (2).
6. A processing technology applied to the CHIP LED packaging structure in claim 5 is characterized by comprising the following steps:
s1, dividing a material plate into lamp areas side by side, wherein each lamp area is set as an insulating layer (1);
s2, respectively packaging a first metal layer and a second metal layer on two sides of each insulating layer (1), wherein the first metal layer comprises a plurality of first metal bonding pads (2), and the second metal layer comprises a plurality of second metal bonding pads (3);
s3, punching through holes (4) at the positions of the four corners of the insulating layer (1), wherein the through holes (4) penetrate through the first metal pad (2) and the second metal pad (3) at the positions of the four corners of the insulating layer (1), and the through holes (4) between the adjacent insulating layers (1) are mutually communicated;
s4, drilling fan-shaped holes (6) in the side face of one side of the insulating layer (1) along the length direction in a penetrating mode, drilling fan-shaped grooves (8) in the side face of one side of the insulating layer (1) along the length direction in a penetrating mode, and drilling the fan-shaped grooves (8) in two positions and located on two sides of the fan-shaped holes (6).
S5, filling solid copper in all the through holes (4), the fan-shaped holes (6) and the fan-shaped grooves (8), wherein first conductive copper (5) is arranged in the through holes (4), second conductive copper (7) is arranged in the fan-shaped holes (6), and third conductive copper (9) is arranged in the fan-shaped grooves (8);
s6, cutting the material plate according to the position of each lamp area to form an independent lamp bead support;
and S7, packaging and packaging the packaging adhesive on each lamp bead support.
8. The manufacturing process of CHIP LED package structure of claim X, wherein after step S5, the following steps are further performed:
and polishing the parts of the first conductive copper (5), the second conductive copper (7) and the third conductive copper (9) which protrude out of the insulating layer (1).
9. The manufacturing process of a CHIP LED package structure as claimed in claim X, wherein the following steps are performed during the cutting of the material plate:
when the fan-shaped holes (6) are cut, four fifths of the area of the fan-shaped holes (6) are left on the chip metal bonding pads (10).
10. The process of claim X, wherein after forming the plurality of beads after step S6, the steps of:
and (4) electroplating all the lamp beads one by one to form an anti-oxidation layer on the first conductive copper (5), the second conductive copper (7) and the third conductive copper (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211017826.XA CN115360186B (en) | 2022-08-23 | 2022-08-23 | CHIP LED packaging structure and processing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211017826.XA CN115360186B (en) | 2022-08-23 | 2022-08-23 | CHIP LED packaging structure and processing technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115360186A true CN115360186A (en) | 2022-11-18 |
| CN115360186B CN115360186B (en) | 2024-01-26 |
Family
ID=84002907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211017826.XA Active CN115360186B (en) | 2022-08-23 | 2022-08-23 | CHIP LED packaging structure and processing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115360186B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005039177A (en) * | 2003-06-24 | 2005-02-10 | Stanley Electric Co Ltd | Surface mounting semiconductor electronic part and its manufacturing method |
| CN102664178A (en) * | 2012-05-25 | 2012-09-12 | 深圳市九洲光电科技有限公司 | Full-colored surface-mounted device |
| JP2017103487A (en) * | 2010-09-10 | 2017-06-08 | 日亜化学工業株式会社 | Support and light-emitting device using the same |
| CN108091644A (en) * | 2017-12-15 | 2018-05-29 | 深圳市晶台股份有限公司 | A kind of encapsulating structure of the highly dense display light source devices of LED |
| CN209515665U (en) * | 2019-01-31 | 2019-10-18 | 山东晶泰星光电科技有限公司 | A kind of the four-in-one LED display module and its display screen of Optimization-type |
| CN215815921U (en) * | 2021-08-13 | 2022-02-11 | 佛山市国星光电股份有限公司 | Side-mounted LED substrate, side-mounted LED whole plate and side-mounted LED device |
-
2022
- 2022-08-23 CN CN202211017826.XA patent/CN115360186B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005039177A (en) * | 2003-06-24 | 2005-02-10 | Stanley Electric Co Ltd | Surface mounting semiconductor electronic part and its manufacturing method |
| JP2017103487A (en) * | 2010-09-10 | 2017-06-08 | 日亜化学工業株式会社 | Support and light-emitting device using the same |
| CN102664178A (en) * | 2012-05-25 | 2012-09-12 | 深圳市九洲光电科技有限公司 | Full-colored surface-mounted device |
| CN108091644A (en) * | 2017-12-15 | 2018-05-29 | 深圳市晶台股份有限公司 | A kind of encapsulating structure of the highly dense display light source devices of LED |
| CN209515665U (en) * | 2019-01-31 | 2019-10-18 | 山东晶泰星光电科技有限公司 | A kind of the four-in-one LED display module and its display screen of Optimization-type |
| CN215815921U (en) * | 2021-08-13 | 2022-02-11 | 佛山市国星光电股份有限公司 | Side-mounted LED substrate, side-mounted LED whole plate and side-mounted LED device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115360186B (en) | 2024-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103311402B (en) | LED package and loading plate | |
| EP2546899B1 (en) | Light emitting module, light source device, liquid crystal display device | |
| JP2012532441A (en) | Light emitting diode package | |
| CN110993773B (en) | Light Emitting Diode Package | |
| TW201515279A (en) | Light-emitting diode assembly and manufacturing method thereof | |
| JP2006294804A (en) | Light emitting diode | |
| CN103325932A (en) | Light-emitting element mounting package, manufacturing method of the same, and light-emitting element package | |
| US8847255B2 (en) | Semiconductor light-emitting device | |
| US11799266B2 (en) | Semiconductor light-emitting device | |
| US20150091432A1 (en) | Substrate for led, led module, and led bulb | |
| KR100882995B1 (en) | The integrated-type led and manufacturing method thereof | |
| EP2590214A2 (en) | Light-emitting module and luminaire | |
| JP4943005B2 (en) | Thin light emitting diode lamp and manufacturing method thereof | |
| WO2014024627A1 (en) | Light-emitting apparatus and method for manufacturing same | |
| KR20090028709A (en) | Light-emitting device mounting substrate and method for producing same, light-emitting device module and method for manufacturing same, display, illuminating device, and traffic signal system | |
| JP7096504B2 (en) | Luminescent device | |
| TWI455365B (en) | Method for manufacturing a led package | |
| TW201336122A (en) | Light emitting diode lightbar and method for manufacturing the same | |
| CN109585631B (en) | light emitting device | |
| CN115360186A (en) | CHIP LED packaging structure and processing technology | |
| US20090108267A1 (en) | Composite light-emitting-diode packaging structure | |
| CN113314511A (en) | LED display module and LED display screen | |
| KR20100028033A (en) | Light emitting device and package assembly for light emitting device | |
| CN108389953B (en) | LED light-emitting device and manufacturing method thereof | |
| CN103219329A (en) | Light-emitting diode device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 518000, 1st floor, Building 4, No. 263 Changfeng Road, Fenghuang Community, Fenghuang Street, Guangming District, Shenzhen, Guangdong Province Patentee after: Tiancheng High tech (Shenzhen) Co.,Ltd. Country or region after: China Address before: 518000 building 4, left, 33 Dongfang Avenue, Songgang street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN TIANCHENG LIGHTING Co.,Ltd. Country or region before: China |
|
| CP03 | Change of name, title or address |