CN115341194A - Growth method for improving light-emitting consistency of micro light-emitting diode - Google Patents
Growth method for improving light-emitting consistency of micro light-emitting diode Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 49
- 238000006243 chemical reaction Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000007789 gas Substances 0.000 description 37
- 230000000903 blocking effect Effects 0.000 description 18
- 238000009826 distribution Methods 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 13
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 238000000137 annealing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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Abstract
The present disclosure provides a growth method for improving the light emitting consistency of a micro light emitting diode, which belongs to the technical field of photoelectron manufacturing. The growth method comprises the following steps: providing a substrate; forming a buffer layer on the substrate; forming a three-dimensional island-forming layer on the buffer layer, and controlling the flow rate of alkyl gas introduced into the reaction cavity to be not less than 250ml/min and not more than 600ml/min when the three-dimensional island-forming layer is formed; and sequentially forming a first semiconductor layer, an active layer and a second semiconductor layer on the three-dimensional island-forming layer. When the three-dimensional island-forming layer grows, alkyl gas is introduced at a flow rate not lower than 250ml/min and not higher than 600ml/min, under the pushing of the alkyl gas, the MO concentration in the central area of the reaction cavity can be improved, most of MO sources are prevented from being concentrated on the edge of the reaction cavity, the MO sources are distributed more uniformly in the reaction cavity, and the light emitting consistency of the micro light emitting diode is improved.
Description
Technical Field
The present disclosure relates to the field of optoelectronic manufacturing technologies, and in particular, to a growth method for improving the uniformity of light emission of a micro light emitting diode.
Background
Micro Light Emitting diodes (Micro LEDs for short) are used as a new product with great influence in the optoelectronic industry, have the characteristics of small volume, long service life, rich and colorful colors, low energy consumption and the like, and are widely applied to display equipment.
In a display device, in order to have a better display effect, it is necessary that the micro light emitting diode has better light emitting consistency.
Disclosure of Invention
The embodiment of the disclosure provides a growth method for improving the light emitting consistency of a miniature light emitting diode, which can improve the light emitting consistency of the miniature light emitting diode. The technical scheme is as follows:
the embodiment of the disclosure provides a growth method for improving the light emitting consistency of a micro light emitting diode, and the growth method comprises the following steps:
providing a substrate;
forming a buffer layer on the substrate;
forming a three-dimensional island-forming layer on the buffer layer, and controlling the flow of alkyl gas introduced into the reaction cavity to be not lower than 250ml/min and not higher than 600ml/min when the three-dimensional island-forming layer is formed;
and sequentially forming a first semiconductor layer, an active layer and a second semiconductor layer on the three-dimensional island-forming layer.
Optionally, the growth process of the three-dimensional island-forming layer comprises a non-growth section and a growth section following the non-growth section;
in the non-growth section, the flow rate of the Ga source is 0, the flow rate of alkyl gas is not lower than 300ml/min and not higher than 600ml/min;
in the growth section, the flow rate of the Ga source is more than 0, the flow rate of alkyl gas is not less than 250ml/min and not more than 500ml/min.
Optionally, the flow rate of alkyl gas in the non-growth section is higher than the flow rate of alkyl gas in the growth section.
Optionally, the alkyl gas flow rate of the non-growth section is 350ml/min to 550ml/min.
Optionally, the alkyl gas flow rate of the growth section is 300ml/min to 450ml/min.
Optionally, the duration of the non-growth segment is 3min to 10min.
Optionally, the growth pressure of the three-dimensional island-forming layer is 200torr to 600torr.
Optionally, the growth temperature of the three-dimensional island-forming layer is 1000 ℃ to 1050 ℃.
Alternatively, a flow rate of an alkyl gas when the first semiconductor layer, the active layer, and the second semiconductor layer are formed is smaller than a flow rate of an alkyl gas when the three-dimensional island-forming layer is formed.
Optionally, the growth pressure of the three-dimensional island-forming layer is the same as the growth pressure of the buffer layer.
The beneficial effects brought by the technical scheme provided by the embodiment of the disclosure at least comprise:
when the three-dimensional island-forming layer grows, alkyl gas is introduced at a flow rate not lower than 250ml/min and not higher than 600ml/min, under the pushing of the alkyl gas, the MO concentration in the central area of the reaction cavity can be improved, and the MO sources are prevented from being mostly concentrated on the edge of the reaction cavity, so that the distribution of the MO sources in the reaction cavity is more uniform. Meanwhile, the pushing transition of the MO source caused by the overlarge flow of alkyl gas is avoided, so that the edge concentration of the reaction cavity is too low to reduce the distribution uniformity of the MO source. The MO sources are more uniformly distributed in the reaction cavity, so that the thickness uniformity of the grown three-dimensional island-forming layer is improved, each subsequently grown layer is smoother, the quality is better, and the light emitting consistency of the micro light emitting diode is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is apparent that the drawings in the description below are only some embodiments of the present disclosure, and it is obvious for those skilled in the art that other drawings may be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a micro light emitting diode according to an embodiment of the present disclosure;
fig. 2 is a flowchart of a growing method for improving light emitting uniformity of a micro light emitting diode according to an embodiment of the present disclosure;
FIG. 3 is a flowchart of another growing method for improving the uniformity of light emission of a micro light emitting diode according to an embodiment of the present disclosure;
fig. 4 is a schematic view illustrating a manufacturing process of a micro light emitting diode according to an embodiment of the present disclosure;
fig. 5 is a schematic view illustrating a manufacturing process of a micro light emitting diode according to an embodiment of the present disclosure;
fig. 6 is a schematic view illustrating a manufacturing process of a micro light emitting diode according to an embodiment of the present disclosure;
fig. 7 is a schematic view illustrating a manufacturing process of a micro light emitting diode according to an embodiment of the present disclosure;
fig. 8 is a schematic view illustrating a manufacturing process of a micro light emitting diode according to an embodiment of the present disclosure;
fig. 9 is a schematic view of a manufacturing process of a micro light emitting diode according to an embodiment of the present disclosure.
Detailed Description
To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a micro light emitting diode according to an embodiment of the present disclosure. As shown in fig. 1, the micro light emitting diode includes a substrate 10, and a buffer layer 20, a three-dimensional island-forming layer 30, a first semiconductor layer 40, an active layer 50, and a second semiconductor layer 60 sequentially stacked on the substrate 10.
Among them, the first semiconductor layer 40 includes a u-type GaN layer 41 and an n-type GaN layer 42. The active layer 50 includes a plurality of InGaN well layers 51 and a plurality of GaN barrier layers 52 alternately stacked. The second semiconductor layer 60 includes Al x Ga 1-x An N electron blocking layer 61 and a p-type GaN layer 62, wherein x is more than or equal to 0.15 and less than or equal to 0.25.
Due to the small size of the micro light-emitting diode, a wafer can be manufactured into a plurality of micro light-emitting diode chips. This results in the micro led chip being sensitive to the uniformity of the wafer thickness, and the poor uniformity of the wafer thickness may result in poor light emitting uniformity of the manufactured micro leds, thereby affecting the display effect of the display device.
When the micro light emitting diode is manufactured, in order to reduce lattice mismatch between an epitaxial layer and a substrate 10, a buffer layer 20 is formed on the substrate 10, and a three-dimensional island-forming layer 30 grown behind the buffer layer 20 plays a role in starting and stopping, so that stress and defects in the epitaxial layer can be reduced, uniformity of subsequent layers is improved, and the surfaces of the subsequent layers are smooth. However, the three-dimensional island-forming layer 30 itself needs to have sufficiently high uniformity, and if the uniformity of the grown three-dimensional island-forming layer 30 is poor, it is difficult to ensure the flatness of each subsequently grown layer, so that the growth of the three-dimensional island-forming layer 30 is very important. In the epitaxial growth, the concentration distribution of the MO source in the reaction chamber has a large influence on the thickness uniformity of the three-dimensional island-forming layer 30. The ideal concentration distribution of the MO sources is that the concentration distribution of each part in the reaction cavity is uniform, but in practice, because factors such as high-speed rotation of a graphite disc in the reaction cavity and the like change the concentration distribution, the MO sources tend to be more concentrated at the edge of the reaction cavity, so that the concentration of the MO sources at the edge is higher in the reaction cavity, and the concentration of the MO sources in the middle is lower, thereby greatly influencing the thickness uniformity of the three-dimensional island-forming layer 30, and further causing the poor light-emitting consistency of the manufactured micro light-emitting diode.
In order to improve the thickness uniformity of the three-dimensional island-forming layer 30 and improve the light emitting consistency of the micro light emitting diode, the embodiment of the present disclosure provides a growth method.
Fig. 2 is a flowchart of a growing method for improving light emitting uniformity of a micro light emitting diode according to an embodiment of the present disclosure. As shown in fig. 2, the growth method includes:
in step S11, a substrate 10 is provided.
In step S12, a buffer layer 20 is formed on the substrate 10.
In step S13, the three-dimensional island-forming layer 30 is formed on the buffer layer 20.
Wherein, when the three-dimensional island-forming layer 30 is formed, the flow rate of alkyl gas introduced into the reaction cavity is controlled to be not less than 250ml/min and not more than 600ml/min.
In step S14, the first semiconductor layer 40, the active layer 50, and the second semiconductor layer 60 are sequentially formed on the three-dimensional island-forming layer 30.
In the related art, when the three-dimensional island-forming layer 30 is grown, the flow rate of alkyl gas introduced into the reaction chamber is usually about 150 ml/min. According to the embodiment of the disclosure, by increasing the flow rate of the alkyl gas, the alkyl gas is introduced at a flow rate not lower than 250ml/min and not higher than 600ml/min when the three-dimensional island-forming layer grows, and under the pushing of the alkyl gas with a higher flow rate, the MO concentration in the central area of the reaction chamber can be increased, and the MO source is prevented from being mostly concentrated on the edge of the reaction chamber, so that the distribution of the MO source in the reaction chamber is more uniform. Meanwhile, the pushing transition of the MO source caused by the overlarge flow of alkyl gas is avoided, so that the edge concentration of the reaction cavity is too low, and the distribution uniformity of the MO source is reduced. The MO sources are more uniformly distributed in the reaction cavity, so that the thickness uniformity of the grown three-dimensional island-forming layer is improved, each subsequently grown layer is smoother, the quality is better, and the light emitting consistency of the micro light emitting diode is improved.
Fig. 3 is a flowchart of another growing method for improving the uniformity of light emission of a micro light emitting diode according to an embodiment of the present disclosure. In particular implementations, embodiments of the present disclosure may employ high purity H 2 Or/and N 2 As carrier gas, trimethyl gallium (TEGa) or triethyl gallium (TMGa) is adopted as Ga source, trimethyl indium (TMIn) is adopted as In source, and silane SiH 4 As n-type dopant, trimethylaluminum TMAl as aluminum source, magnesium diclocene Cp 2 Mg as a p-type dopant.
Fig. 4 to 9 are schematic views illustrating a growth process of a micro light emitting diode according to an embodiment of the present disclosure.
As shown in fig. 4 to 9, the growth method includes:
in step S21, a substrate 10 is provided.
Illustratively, the substrate 10 is a sapphire substrate, a silicon substrate, or a silicon carbide substrate. The substrate 10 may be a flat substrate or a patterned substrate.
As an example, in the embodiments of the present disclosure, the substrate 10 is a sapphire substrate. The sapphire substrate is a common substrate, the technology is mature, and the cost is low. The substrate can be a patterned sapphire substrate or a sapphire flat sheet substrate.
In step S21, the sapphire substrate may be further pretreated, and the sapphire substrate is placed in an MOCVD (Metal-organic Chemical Vapor Deposition) reaction chamber and is baked for 12 to 18 minutes. As an example, in the embodiment of the present disclosure, the baking process was performed on the sapphire substrate for 15 minutes.
Specifically, the baking temperature may be 1000 ℃ to 1200 ℃, and the pressure in the MOCVD reaction chamber during baking may be 100Torr to 200Torr.
In step S22, a buffer layer 20 is formed on the substrate 10.
As shown in fig. 4, a buffer layer 20 is formed on one surface of the substrate 10.
Specifically, the buffer layer 20 may be formed on the [0001] plane of the sapphire substrate.
Wherein, the thickness of buffer layer 20 can be 10nm ~ 30nm, the thickness of buffer layer 20 can influence the quality of each layer of follow-up growth, if the thickness of buffer layer 20 is too thin, then can lead to the surface of buffer layer 20 comparatively loose and rough, can not provide a good template for the growth of follow-up structure, along with the increase of buffer layer 20 thickness, the surface of buffer layer 20 becomes comparatively closely and level and smooth gradually, be favorable to the growth of follow-up structure, but if the thickness of buffer layer 20 is too thick, then can lead to the surface of buffer layer 20 too closely, be unfavorable for the growth of follow-up structure equally, can't reduce the lattice defect in the epitaxial layer.
As an example, in the embodiment of the present disclosure, the buffer layer 20 has a thickness of 20nm.
Optionally, the growth temperature of the buffer layer 20 is 530 ℃ to 560 ℃. As an example, in the embodiments of the present disclosure, the growth temperature of the buffer layer 20 is 550 ℃.
Optionally, the growth pressure of the buffer layer 20 is 200torr to 500torr. As an example, in an embodiment of the present disclosure, the growth pressure of the buffer layer 20 is 400torr.
In step S23, the three-dimensional island-forming layer 30 is grown on the buffer layer 20.
As shown in fig. 5, a three-dimensional island-forming layer 30 is grown on the buffer layer 20, and the three-dimensional island-forming layer 30 is a GaN layer.
The formation of the three-dimensional island-forming layer 30 includes a non-growth section and a growth section following the non-growth section. Specifically, in the non-growth section, the flow rate of the Ga source is 0, and the flow rate of the alkyl gas is not less than 300ml/min and not more than 600ml/min.
In the growth stage, the flow rate of the Ga source is more than 0, the flow rate of alkyl gas is not less than 250ml/min and not more than 500ml/min.
alkyl gas is injected into the reaction chamber through an alkyl pipeline. Each gas pipeline of the alkyl pipeline comprises a Mo source gas pipeline. In the non-growth section, the flow rate of the Ga source is 0, namely the Ga source is closed. In the process, the three-dimensional island-forming layer 30 is not yet deposited, and the continuous feeding of alkyl gas can drain the residual Ga source in the pipeline after the Ga source is closed. The growth of the three-dimensional island-forming layer 30 requires that the reaction chamber has a sufficient concentration of Ga source, and if the non-growth section is skipped, i.e. the Ga source is not turned off, and the flow rate of the Ga source is directly adjusted to the required size to perform the growth of the three-dimensional island-forming layer 30, this will cause the residual Ga source in the tube to be introduced into the growth, and the addition of this residual Ga source will affect the concentration of the Ga source in the reaction chamber, thereby affecting the growth quality of the three-dimensional island-forming layer 30. After the residual Ga source in the pipeline is exhausted, the flow rate of the Ga source is set to the required size for growing, so that the concentration of the Ga source in the reaction cavity can meet the requirement.
In a non-growth section, the introduced alkyl gas pushes the flow of the MO source in the reaction cavity to make the distribution of the MO source more uniform, and the flow is set to be 300 ml/min-600 ml/min, so that the obvious pushing effect is achieved, the concentration of the MO source in the center of the reaction cavity is improved, the phenomenon that the concentration distribution of the MO source in the reaction cavity is reversed due to overlarge flow, and the concentration of the MO source at the edge is lower than that of the MO source in the center is avoided.
Preferably, the flow rate of alkyl gas in the non-growth section is 350ml/min to 550ml/min.
In the growth section, the flow rate of the introduced alkyl gas is set to be 250 ml/min-500 ml/min, which also aims to obviously promote the flow of the MO source in the reaction cavity, so that the distribution of the MO source is more uniform, the concentration of the MO source in the center of the reaction cavity is improved, and the phenomenon that the concentration of the MO source at the edge of the reaction cavity is too low due to overlarge flow rate is avoided.
Preferably, the flow rate of alkyl gas in the growth section is 300ml/min to 450ml/min.
In some examples, the flow rate of alkyl gas in the non-growth section is higher than the flow rate of alkyl gas in the growth section.
The reason why the flow rate of alkyl gas in the non-growth section is set to be slightly larger in the range acceptable for the concentration distribution of the MO source in the reaction chamber is to accelerate the removal of the residual Ga source in the tube, thereby improving the overall production efficiency. In addition, in the growth stage, too high flow rate may cause too much amount of alkyl gas to be introduced, dilute the MO source in the reaction chamber, and possibly cause too low concentration of the MO source at the center and edge of the reaction chamber, which may affect the overall chemical reaction. In the non-growth section, enough MO source is firstly introduced into the reaction cavity at a higher flow rate, the concentration of the MO source in the central region of the reaction cavity is improved, the sufficient amount of the MO source and the stability of the MO source are ensured when the growth section grows, particularly in the central region, the amount of the MO source is maintained at a slightly lower flow rate of a growth stage, the uniformity of the distribution of the MO source is improved, and the light emitting consistency of the micro light emitting diode is further improved.
Optionally, the duration of the non-growth segment is 3min to 10min.
The alkyl gas continuously introduced into the non-growth section not only ensures that the concentration distribution of the MO source in the reaction cavity is more uniform, but also plays a role in removing residual Ga source in the pipeline. The non-growth section is too short in duration, the residual Ga source in the tube may not be cleaned, too long in duration, which may reduce the overall production efficiency and lead to increased costs.
Optionally, the growth pressure of the three-dimensional island-forming layer 30 is 200torr to 600torr. The growth temperature of the three-dimensional island-forming layer 30 is 1000-1050 ℃.
In this pressure range and temperature range, the three-dimensional growth of the three-dimensional island-forming layer 30 is facilitated.
In some examples, the growth pressure of the three-dimensional island-forming layer 30 is the same as the growth pressure of the buffer layer 20.
For example, the growth pressure of the three-dimensional island-forming layer 30 and the growth pressure of the buffer layer 20 are both 400torr. The buffer layer 20 and the three-dimensional island-forming layer 30 grow under the same growth pressure, so that the pressure adjustment of the reaction chamber is facilitated, and the production is simplified.
After the growth of the three-dimensional island-forming layer 30 is completed, the subsequent growth of the first semiconductor layer 40, the active layer 50, and the second semiconductor layer 60 may be performed. Among them, the first semiconductor layer 40 includes a u-type GaN layer 41 and an n-type GaN layer 42. The active layer 50 includes a plurality of InGaN well layers 51 and a plurality of GaN barrier layers 52 alternately stacked. The second semiconductor layer 60 includes Al x Ga 1-x An N electron blocking layer 61 and a p-type GaN layer 62, wherein x is more than or equal to 0.15 and less than or equal to 0.25.
In step S24, the u-type GaN layer 41 is grown on the three-dimensional island-forming layer 30.
As shown in fig. 6, a u-type GaN layer 41 is grown on the three-dimensional island-forming layer 30. The thickness of the u-type GaN layer 41 may be 2 μm to 3.5 μm, and in the present embodiment, the thickness of the u-type GaN layer 41 is 3 μm.
The growth temperature of the u-type GaN layer 41 may be 1000 to 1100 deg.C, and the growth pressure may be 200to 600torr. In this example, the growth temperature of the u-type GaN layer 41 was 1050 ℃ and the growth pressure was 400torr.
When the u-type GaN layer 41 is grown, the flow rate of the alkyl gas is smaller than that when the three-dimensional island-forming layer 30 is formed.
This is because the concentration distribution of the MO source in the reaction chamber is more uniform by the alkyl gas with a higher flow rate when the three-dimensional island-forming layer 30 is grown, so that the grown three-dimensional island-forming layer 30 has a higher thickness uniformity, and thus, even if the flow rate of the alkyl gas is reduced, subsequent layers are easier to grow more smoothly.
In fact, not only the u-type GaN layer 41, but also the n-type GaN layer 42, the InGaN well layer 51, the GaN barrier layer 52, and Al are grown subsequently x Ga 1-x In both the N-electron blocking layer 61 and the p-type GaN layer 62, the flow rate of the alkyl gas may be smaller than that in forming the three-dimensional island-forming layer 30.
In step S25, the n-type GaN layer 42 is grown on the u-type GaN layer 41.
As shown in fig. 7, an n-type GaN layer 42 is grown on the u-type GaN layer 41.
Optionally, the growth temperature of the n-type GaN layer 42 is 1000 ℃ to 1100 ℃. As an example, in the disclosed embodiment, the growth temperature of the n-type GaN layer 42 is 1050 ℃.
Alternatively, the growth pressure of the n-type GaN layer 42 may be 150to 300torr. As an example, in the embodiment of the present disclosure, the growth pressure of the n-type GaN layer 42 is 200torr.
When the n-type GaN layer 42 is grown, silane doping is performed, and the Si doping concentration in the n-type GaN layer 42 may be 10 17 cm -3 ～10 18 cm -3 . As an example, in the embodiments of the present disclosure, the Si doping concentration in the n-type GaN layer 42 is 5 × 10 17 cm -3 。
The thickness of the n-type GaN layer 42 may be 2 μm to 3 μm, and in the disclosed embodiment, the thickness of the n-type GaN layer 42 is 2.5 μm.
In step S26, the active layer 50 is grown on the n-type GaN layer 42.
As shown in fig. 8, an active layer 50 is grown on the n-type GaN layer 42.
In implementation, the active layer 50 may include a plurality of InGaN well layers 51 and a plurality of GaN barrier layers 52 alternately stacked.
Alternatively, the number of cycles in which the InGaN well layers 51 and GaN barrier layers 52 are alternately stacked may be 3 to 8. Exemplarily, in the embodiment of the present disclosure, the number of cycles in which the InGaN well layer 51 and the GaN barrier layer 52 are alternately stacked is 5.
Note that fig. 8 shows only a partial structure of the active layer 50, and is not intended to limit the number of cycles in which the InGaN well layer 51 and the GaN barrier layer 52 are alternately stacked.
In some examples, the growth temperature of the InGaN well layer 51 is 760 ℃ to 780 ℃. The growth temperature of the GaN barrier layer 52 is 860-890 ℃. As an example, in the embodiment of the present disclosure, the growth temperature of the InGaN well layer 51 is 770 ℃, and the growth temperature of the GaN barrier layer 52 is 880 ℃.
In some examples, the growth pressure of the InGaN well layer 51 and the GaN barrier layer 52 may be 150torr to 300torr. As an example, in the embodiment of the present disclosure, the growth pressure of each of the InGaN well layer 51 and the GaN barrier layer 52 is 200torr.
Alternatively, the thickness of the InGaN well layer 51 may be 2nm to 4nm. The thickness of the GaN barrier layer 52 may be 9nm to 14nm.
Exemplarily, in the embodiment of the present disclosure, the thickness of the InGaN well layer 51 is 3nm. The thickness of the GaN barrier layer 52 is 11nm.
After the active layer 50 is grown, a second semiconductor layer 60 is grown on the active layer 50, and in the embodiment of the present disclosure, the second semiconductor layer 60 includes Al sequentially stacked on the active layer 50 x Ga 1-x An N electron blocking layer 61 and a p-type GaN layer 62, wherein x is more than or equal to 0.15 and less than or equal to 0.25. The growth of the second semiconductor layer 60 includes steps S27 to S28 as follows.
In step S27, al is grown on the active layer 50 x Ga 1-x An N-electron blocking layer 61.
As shown in fig. 9, al is grown on the active layer 50 x Ga 1-x An N-electron blocking layer 61.
Specifically, al x Ga 1-x The growth temperature of the N-electron blocking layer 61 may be 930 ℃ to 970 ℃, for example, in the embodiment of the present disclosure, al x Ga 1-x The growth temperature of the N-electron blocking layer 61 was 960 ℃.
Specifically, al x Ga 1-x The growth pressure of the N-electron blocking layer 61 may be 50torr to 150torr. As an example, in the embodiments of the present disclosure, al x Ga 1-x The growth pressure of the N-electron blocking layer 61 was 100torr.
Alternatively, al x Ga 1-x The thickness of the N-electron blocking layer 61 may be 30nm to 50nm. As an example, in the embodiments of the present disclosure, al x Ga 1-x The thickness of the N-electron blocking layer 61 was 40nm. If Al is present x Ga 1-x The too thin thickness of the N-electron blocking layer 61 may reduce the blocking effect on electrons, if Al is used x Ga 1-x If the thickness of the N-electron blocking layer 61 is too thick, al increases x Ga 1-x The N-electron blocking layer 61 absorbs light, thereby reducing the light emitting efficiency of the micro light emitting diode.
In step S28, in Al x Ga 1-x A p-type GaN layer 62 is grown on the N-electron blocking layer 61.
In Al x Ga 1-x The structure after growing the p-type GaN layer 62 on the N-electron blocking layer 61 can be referred to fig. 1.
Specifically, the growth temperature of the p-type GaN layer 62 may be 940 ℃ to 980 ℃, and in the embodiment of the present disclosure, the growth temperature of the p-type GaN layer 62 is 960 ℃, as an example.
Specifically, the growth pressure of the p-type GaN layer 62 may be 200torr to 600torr. As an example, in the embodiment of the present disclosure, the growth pressure of the p-type GaN layer 62 is 400torr.
Alternatively, the thickness of the p-type GaN layer 62 may be 50nm to 80nm. As an example, in the embodiments of the present disclosure, the thickness of the p-type GaN layer 62 is 60nm.
Alternatively, in the p-type GaN layer 62, the doping concentration of Mg may be 10 18 cm -3 ～10 20 cm -3 。
After step S28, subsequent steps such as annealing, electrode fabrication, etc. may be performed to obtain a complete micro light emitting diode.
For example, the annealing treatment may be performed in a nitrogen atmosphere at an annealing temperature of 650 to 850 ℃ for 5 to 15 minutes.
The above description is intended only to illustrate the preferred embodiments of the present disclosure, and should not be taken as limiting the disclosure, as any modifications, equivalents, improvements and the like which are within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A method for growing a light emitting diode, comprising:
providing a substrate (10);
forming a buffer layer (20) on the substrate (10);
forming a three-dimensional island-forming layer (30) on the buffer layer (20), and controlling the flow rate of alkyl gas introduced into the reaction cavity to be not less than 250ml/min and not more than 600ml/min when the three-dimensional island-forming layer (30) is formed;
a first semiconductor layer (40), an active layer (50), and a second semiconductor layer (60) are sequentially formed on the three-dimensional island-forming layer (30).
2. The growth method according to claim 1, characterized in that the growth process of the three-dimensional island-forming layer (30) comprises a non-growth section and a growth section following the non-growth section;
in the non-growth section, the flow rate of the Ga source is 0, the flow rate of alkyl gas is not lower than 300ml/min and not higher than 600ml/min;
in the growth section, the flow rate of the Ga source is more than 0, the flow rate of alkyl gas is not less than 250ml/min and not more than 500ml/min.
3. The growth method according to claim 2, wherein the flow rate of alkyl gas in the non-growth section is higher than the flow rate of alkyl gas in the growth section.
4. The growth method according to claim 3, wherein the flow rate of alkyl gas in the non-growth section is 350ml/min to 550ml/min.
5. The growth method according to claim 3, wherein the flow rate of alkyl gas in the growth zone is 300to 450ml/min.
6. The growth method according to any one of claims 2 to 5, wherein the duration of the non-growth section is 3min to 10min.
7. The growth method according to any one of claims 1 to 5, wherein the growth pressure of the three-dimensional island-forming layer (30) is 200to 600torr.
8. The growth method according to any one of claims 1 to 5, wherein the growth temperature of the three-dimensional island-forming layer (30) is 1000 ℃ to 1050 ℃.
9. The growth method according to any one of claims 1 to 5, wherein a flow rate of an alkyl gas when forming the first semiconductor layer (40), the active layer (50), and the second semiconductor layer (60) is smaller than a flow rate of an alkyl gas when forming the three-dimensional island-forming layer (30).
10. The growth method according to any one of claims 1 to 5, wherein the growth pressure of the three-dimensional island-forming layer (30) is the same as the growth pressure of the buffer layer (20).
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