CN115290953A - Self-driven mechanical signal sensor based on dynamic diode and preparation method thereof - Google Patents
Self-driven mechanical signal sensor based on dynamic diode and preparation method thereof Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
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Abstract
The invention discloses a self-driven mechanical signal sensor based on a dynamic diode and a preparation method thereof, and the self-driven mechanical signal sensor comprises a layered structure arranged in a package, wherein the layered structure comprises a semiconductor layer, an insulating layer and a gap layer arranged between the semiconductor layer and the insulating layer; the invention uses the potential difference between the metal and the semiconductor to excite high-energy hot electrons under the input of a broadband mechanical signal, and the high-energy hot electrons are transmitted through the insulating layer to form a same-frequency electrical signal for output. The flexible self-driven sensor based on the semiconductor/insulating layer/metal dynamic diode has the advantages of wide frequency spectrum, high voltage, flexibility, long service life and the like, and can keep good performance under extreme environments (sea, land and air). In addition, the invention has simple structure and lower cost, and can be compatible with the existing integrated circuit process, so that the self-driven sensor can be popularized and used in a large scale.
Description
Technical Field
The invention relates to a self-driven sensor and a manufacturing method thereof, in particular to a self-driven mechanical signal sensor based on a dynamic diode and a manufacturing method thereof.
Background
Nowadays, with the exploration of more coordinates on the earth by human beings, self-driven sensing devices in extreme environments are called for, and human beings urgently need integratable semiconductor sensing chips to provide powerful guarantee for further exploring the earth and even the universe. However, the integration of the current self-driven sensing device is low, and the wide-band mechanical vibration sensor based on the semiconductor still has a large upgrading space. For a long time, the industry and the academia are seeking a reliable solution to integrate broadband mechanical signals into the existing electrical signal systems. The main device model is some devices based on piezoelectric effect, the main principle is to output by using the charge displacement fixed in the material body, and the problem is obvious, namely higher internal resistance of the device and lower limit response amplitude. Therefore, a conductive current sensor capable of fast and accurate response under wide frequency and wide mechanical signal is urgently needed.
Therefore, a semiconductor/insulator/metal-based conduction current dynamic diode is designed, and a broadband mechanical signal input can be accurately and quickly converted into an electrical signal output with the same frequency through the physical processes of hot electron transition, rebound and in-vivo transport. The invention uses the potential difference between the metal and the semiconductor to excite high-energy thermal electrons under the input of broadband mechanical signals, and after rebounding at the interface, the high-energy thermal electrons jump through the insulating layer to form the output of the same-frequency electrical signals, thereby breaking the fixed mode that the insulating material can not conduct current in the traditional thinking. The flexible self-driven sensor based on the semiconductor/insulating layer/metal dynamic diode has the advantages of wide frequency spectrum, high voltage, flexibility, long service life and the like, and can keep good performance under extreme environments (sea, land and air).
Disclosure of Invention
The invention aims to provide a novel mechanical signal sensor and a preparation method thereof, the sensor is a self-driven mechanical signal sensor based on a dynamic diode, can realize output of same-frequency electrical signals under broadband mechanical signal input, and has quick response.
The technical scheme adopted by the invention is as follows:
a self-driven mechanical signal sensor based on a dynamic diode comprises a layered structure arranged in a package, wherein the layered structure comprises a semiconductor layer, an insulating layer and a gap layer arranged between the semiconductor layer and the insulating layer; the sensor converts external mechanical signal input into a same-frequency electrical signal output by dynamic contact and separation between the semiconductor layer and the insulating layer and by utilizing thermal electron transition, rebound and transport mechanisms in the dynamic diode.
Further, the semiconductor layer is one of silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, cadmium telluride, gallium nitride, indium phosphide, molybdenum disulfide, black phosphorus, tungsten diselenide, molybdenum ditelluride, molybdenum diselenide and tungsten disulfide.
Further, the insulating layer is one of insulating materials such as fluoroethylene propylene copolymer (FEP), polyvinylidene fluoride (PVDF), teflon (PTFE), hafnium oxide, titanium oxide, gallium nitride, lithium niobate, and aluminum oxide.
Further, the electrode on the insulating layer is any one of gold, silver, copper, aluminum, platinum and iron, or a plurality of metal materials capable of being formed into a film.
Furthermore, the electrode on the semiconductor layer is a composite electrode of one or more of gold, palladium, silver, titanium, chromium and nickel.
Further, the package is a flexible package.
Further, the thickness of the void layer is preferably not less than 10nm.
The method for preparing the self-driven mechanical signal sensor based on the dynamic diode comprises the following steps: after preparing a back electrode on the semiconductor layer, cleaning the surface and drying the surface; manufacturing a metal film electrode on the insulating layer; flexibly packaging the insulating layer and the semiconductor layer to form a gap layer between the semiconductor layer and the insulating layer; the electrodes are led out of the flexible package through the leads.
Compared with the prior art, the invention has the beneficial effects that:
the invention utilizes the potential difference between the metal and the semiconductor to excite high-energy thermal electrons on the interface of the insulating layer/the semiconductor layer under the input of broadband mechanical signals, the high-energy thermal electrons are transmitted through the insulating layer after rebounding, and the high-energy thermal electrons are guided away before relaxation, so as to form the output of the same-frequency electrical signals. The self-driven sensor based on the semiconductor/insulating layer/metal dynamic diode has the advantages of wide frequency spectrum, high voltage, flexibility, long service life and the like, and can keep good performance under extreme environments (sea, land and air). Taking a dynamic diode mechanical sensor based on P-type silicon/FEP/silver as an example, the sensor can realize 50V limit response, can stabilize the output of same frequency without obvious attenuation voltage under an ultra-wide mechanical frequency spectrum of 0-40kHz, can reach the fastest response time of 1 mu s measured by experiments, and can stably work under the extreme environments of underwater, extreme cold and the like.
Drawings
FIG. 1 is a schematic structural diagram of a self-driven mechanical signal sensor based on a semiconductor/insulator/metal dynamic diode according to the present invention;
FIG. 2 is a schematic diagram of a P-type silicon/FEP/silver based dynamic diode sensor;
fig. 3 is a graph of the output voltage of a P-type silicon/FEP/silver dynamic diode-based sensor at daily frequencies.
Fig. 4 and 5 are graphs of the output voltage of a P-type silicon/FEP/silver based dynamic diode sensor at ultrasonic frequencies.
Fig. 6 is a graph of the output voltage of a graphene film/FEP/silver based flexible dynamic diode sensor at daily frequencies.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
Referring to fig. 1, the self-driven mechanical signal sensor based on dynamic diode of the present invention comprises a semiconductor layer 1, an insulator layer 2, and a metal layer 3 from bottom to top in sequence, wherein a back electrode is arranged on the semiconductor layer 1; packaging to form a gap layer by leaving a gap between the insulator layer 2 and the semiconductor layer 3, and leading the metal layer 3 and the back electrode out through leads; in a dynamic state, a mechanical signal is input to an interface between the semiconductor layer and the insulator layer to keep the semiconductor layer and the insulator layer in contact with each other and separated from each other.
Example 1
1) Depositing a layer of titanium electrode with the thickness of 50nm on the back of the P-silicon by an electron beam evaporation coating method;
2) Sequentially immersing the sample obtained in the step 1) into deionized water, acetone and isopropanol to carry out surface cleaning treatment;
3) Leading out a lead from the sample obtained in the step 2) at a back electrode;
4) Coating a layer of conductive silver paste with the thickness of 500nm on the surface of the FEP film;
5) Drying the sample obtained in the step 4), and sequentially immersing the sample into deionized water, acetone and isopropanol to carry out surface cleaning treatment;
6) Leading out a lead from the sample obtained in the step 5) on a conductive silver paste electrode;
7) After the edges of the obtained p-type silicon are lifted by using insulating glue, the insulating glue is adhered to the edges of the obtained FEP, and a 10nm gap layer is established between the p-type silicon and the FEP to form a working area;
8) Mechanical signals are vertically input into a working area, and the same-frequency electrical signals can be obtained and output after microscopic dynamic contact and separation;
FIG. 2 is a block diagram of a P-silicon/FEP/silver based dynamic diode sensor. The generator is shown in a schematic diagram of fig. 2, in the process of contacting P-silicon and FEP, high-energy hot electrons in P-type silicon are excited to be above a conduction band, and enter a body after rebounding at an interface to form ultra-fast transportation; in the separation process, after the hot holes form a similar kinetic process, an inverted electric signal is output. FIG. 3 is a graph of the power frequency output voltage of a P-silicon/FEP/silver based dynamic diode sensor. Fig. 4 and 5 are graphs of high-frequency output voltage of a P-silicon/FEP/silver dynamic diode sensor.
Example 2
1) Coating conductive silver paste on the graphene film, and drying;
2) Sequentially immersing the sample obtained in the step 1) into deionized water, acetone and isopropanol to carry out surface cleaning treatment;
3) Leading out a lead from the sample obtained in the step 2) on a copper foil back electrode;
4) Coating a layer of conductive silver paste with the thickness of 500nm on one side of the FEP film;
5) Drying the sample obtained in the step 4);
6) Leading out a lead from the sample obtained in the step 5) on a conductive silver paste electrode;
7) After the edges of the obtained graphene are raised by insulating glue, the edges of the obtained graphene are adhered to the edges of the obtained FEP through the insulating glue, and a 20nm high gap layer is established between the edges of the obtained graphene and the FEP to form a working area;
8) Mechanical signals are vertically input into a working area, and the same-frequency electrical signals can be obtained and output after microscopic dynamic contact and separation;
taking a graphene film/FEP/silver-based dynamic diode generator as an example, high-energy hot electrons in a graphite film can be excited to be above a Dirac point in the contact process of the graphene film and the FEP, and enter a body to form ultra-fast transportation after interface rebounding, and simultaneously, a carrier self-avalanche effect is accompanied; in the separation process, after the hot holes form a similar kinetic process, an inverted electric signal is output. Fig. 6 is a graph of the power frequency output voltage of a graphene film/FEP/silver based flexible dynamic diode sensor.
Example 3
1) Depositing a layer of nickel-gold electrode on the back of the n-silicon rod by an electron beam evaporation coating method, wherein the thickness of the nickel-gold electrode is 50nm;
2) Sequentially immersing the sample obtained in the step 1) into deionized water, acetone and isopropanol to carry out surface cleaning treatment;
3) Leading out a lead from the sample obtained in the step 2) at a back electrode;
4) Spraying a layer of conductive copper paste on the surface of the polytetrafluoroethylene, wherein the thickness of the conductive copper paste is 500nm;
5) Drying the sample obtained in the step 4), and sequentially immersing the sample into deionized water, acetone and isopropanol to carry out surface cleaning treatment;
6) Leading out a lead from the sample obtained in the step 5) on a conductive silver paste electrode;
7) After the edges of the obtained n-type silicon are heightened by using insulating glue, the insulating glue is adhered with the edges of polytetrafluoroethylene, and a 20 nm-high clearance layer is established in the glue-free middle parts of the insulating glue and the polytetrafluoroethylene to form a working area;
8) Mechanical signals are vertically input into a working area, and the same-frequency electrical signals can be obtained and output after microcosmic dynamic contact and separation;
according to the obtained dynamic diode sensor based on n-silicon/polytetrafluoroethylene/copper, high-energy hot electrons in n-type silicon can be excited to be above a conduction band in the process of contacting n-silicon with polytetrafluoroethylene, and enter a body to form ultra-fast transportation after interface rebounding; during the separation process, after the hot holes form a similar kinetic process, an inverted electric signal is output.
In addition, through a large number of experimental researches, the semiconductor layer can also be any one of indium gallium arsenic, zinc oxide, germanium, cadmium telluride, gallium nitride, indium phosphide, molybdenum disulfide, black phosphorus, tungsten diselenide, molybdenum ditelluride, molybdenum diselenide and tungsten disulfide, the prepared samples can generate similar electric signal output, specific preparation methods are not described any more, and the technical scheme description of the invention can be realized by the technical personnel in the field.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (8)
1. A self-driven mechanical signal sensor based on a dynamic diode is characterized by comprising a layered structure arranged in a package, wherein the layered structure comprises a semiconductor layer, an insulating layer and a gap layer arranged between the semiconductor layer and the insulating layer; the sensor converts external mechanical signal input into a same-frequency electrical signal output by dynamic contact and separation between the semiconductor layer and the insulating layer and by utilizing thermal electron transition, rebound and transport mechanisms in the dynamic diode.
2. The dynamic diode based self driven mechanical signal sensor of claim 1 wherein said semiconductor layer is one of silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, cadmium telluride, gallium nitride, indium phosphide, molybdenum disulfide, black phosphorus, tungsten diselenide, molybdenum ditelluride, molybdenum diselenide, tungsten disulfide.
3. The dynamic diode-based self-driven mechanical signal sensor as claimed in claim 1, wherein the insulating layer is one of Fluorinated Ethylene Propylene (FEP), polyvinylidene fluoride (PVDF), teflon (PTFE), hafnium oxide, titanium oxide, gallium nitride, lithium niobate, and aluminum oxide.
4. The dynamic diode-based self-driven mechanical signal sensor as claimed in claim 1, wherein the electrode on the insulating layer is any one or more of gold, silver, copper, aluminum, platinum, and iron.
5. The dynamic diode-based self-driven mechanical signal sensor as claimed in claim 1, wherein the electrode on the semiconductor layer is a composite electrode of one or more of gold, palladium, silver, titanium, chromium and nickel.
6. The dynamic diode-based self-driven mechanical signal sensor of claim 1, wherein said package is a flexible package.
7. The dynamic diode-based self-driven mechanical signal sensor of claim 1, wherein said voided layer has a thickness of no less than 10nm.
8. A method of making a dynamic diode-based self-driven mechanical signal sensor as claimed in any one of claims 1 to 7, comprising: after preparing a back electrode on the semiconductor layer, cleaning the surface and drying the surface; manufacturing a metal film electrode on the insulating layer; flexibly packaging the insulating layer and the semiconductor layer to form a gap layer between the semiconductor layer and the insulating layer; the electrodes are led out of the flexible package through leads.
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