CN115259675B - Glass powder for positive silver main grid slurry of N-type TOPCON crystalline silicon solar cell and preparation method thereof - Google Patents
Glass powder for positive silver main grid slurry of N-type TOPCON crystalline silicon solar cell and preparation method thereof Download PDFInfo
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- CN115259675B CN115259675B CN202210889418.7A CN202210889418A CN115259675B CN 115259675 B CN115259675 B CN 115259675B CN 202210889418 A CN202210889418 A CN 202210889418A CN 115259675 B CN115259675 B CN 115259675B
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- 239000011521 glass Substances 0.000 title claims abstract description 75
- 239000000843 powder Substances 0.000 title claims abstract description 59
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000002002 slurry Substances 0.000 title claims abstract description 26
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 25
- 239000004332 silver Substances 0.000 title claims abstract description 25
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000002156 mixing Methods 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000006229 carbon black Substances 0.000 claims abstract description 12
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims abstract description 6
- 229910018068 Li 2 O Inorganic materials 0.000 claims abstract description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 6
- 239000012634 fragment Substances 0.000 claims description 12
- 239000000156 glass melt Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 8
- 238000003723 Smelting Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000005097 cold rolling Methods 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 238000005303 weighing Methods 0.000 claims description 5
- 238000001238 wet grinding Methods 0.000 claims description 5
- 238000004321 preservation Methods 0.000 claims description 4
- 239000012752 auxiliary agent Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000007670 refining Methods 0.000 claims description 3
- 229910016569 AlF 3 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 13
- 230000032683 aging Effects 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
Abstract
The invention discloses glass powder for positive silver main grid slurry of an N-type TOPCON crystalline silicon solar cell and a preparation method thereof, belonging to the technical field of solar photovoltaic cells, wherein the glass powder comprises the following components in percentage by weight: 10-60% PbO/Pb 2 O 3 /Pb 3 O 4 ，0～10%TeO 2 、1～20％Bi 2 O 3 、1～30%B 2 O 3 、0.1～10%CaO、0～3%CeO、0～10%SiO 2 、0.1～15% (Li 2 O+Na 2 O+K 2 O), 5-60% of a tension aid and 1-10% of a sintering property adjusting aid. And 1% -5% of white carbon black is added into the prepared glass powder for fully mixing to obtain the glass powder for the positive silver main grid slurry, the obtained glass powder and a silicon wafer have high tensile force after being sintered, and the prepared slurry can be sintered at 750-850 ℃, so that the problem of insufficient tensile force caused by the reduction of gram weight of the front main grid slurry of the N-type TOPCO battery piece due to the requirement of cost reduction can be solved. In addition, the preparation method has simple preparation steps and low cost, and is suitable for industrial popularization and production.
Description
Technical Field
The invention belongs to the technical field of solar photovoltaic cells, and particularly relates to glass powder for positive silver main grid slurry of an N-type TOPCO crystalline silicon solar cell and a preparation method thereof.
Background
Solar cell modules are one of the important products in the new energy industry. However, with the rapid development of new solar cell technologies such as TOPCON and HJT, the situation that technological reform is necessary to be made on the front silver paste of the solar cell is forced, and glass powder serving as a key raw material of the front silver paste is also necessary to enter into the front silver paste, so that the novel cell technology is forced to be matched.
Disclosure of Invention
Aiming at the problem, the invention provides glass powder for positive silver main grid slurry of an N-type TOPCO crystalline silicon solar cell, which solves the problem that the traditional glass powder cannot adapt to low tensile force caused by a low gram weight process.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
glass powder for positive silver main grid slurry of N-type TOPCO crystalline silicon solar cell, wherein the glass powder body comprises the following components in percentage by weight: 10-60% PbO/Pb 2 O 3 /Pb 3 O 4 ，0～10%TeO 2 、1～20％Bi 2 O 3 、1～30%B 2 O 3 、0.1～10%CaO、0～3%CeO、0～10%SiO 2 、0.1～15% (Li 2 O+Na 2 O+K 2 O), 5-60% of a tension aid and 1-10% of a sintering property adjusting aid, wherein the glass powder body is fully mixed with white carbon black in a certain proportion to obtain the glass powder for the positive silver main grid slurry.
It should be noted that: pbO/Pb 2 O 3 /Pb 3 O 4 Representing PbO, pb 2 O 3 、Pb 3 O 4 Any one of the above is required, and PbO/Pb is added in the application 2 O 3 /Pb 3 O 4 Mainly for the main gate slurry lifting tension. Li (Li) 2 O+Na 2 O+K 2 O represents a combination of three oxides, which can be one or more oxides.
As a further technical scheme, the tension aid is V 2 O 5 、Sb 2 O 3 、NaF、LiF、PbF 2 、AlF 3 、TiF 4 One or a mixture of two or more of the above materials in any proportion. The tension aid has the main functions of adjusting the surface tension of glass, improving the wettability of the glass and improving the tension.
As a further technical scheme, the sintering property adjusting auxiliary agent is TiO 2 、MnO 2 、WO 3 、Ge 2 O 3 、Fe 2 O 3 And one or more than two of ZnO and NiO are mixed in any proportion, and the sintering property adjusting auxiliary agent mainly has the effects of adjusting the sintering temperature of glass, improving the chemical stability of the glass and improving the tensile force.
As a further technical scheme, the Tg temperature of the glass powder is 320-440 ℃ and the Ts temperature of the glass powder is 480-580 ℃.
As a further technical scheme, the glass powder is prepared by mixing a glass powder body subjected to melting and refining with 1% -5% of white carbon black, and the purpose of adding the white carbon black is to improve shaping and reduce current loss.
Furthermore, the average particle size of the glass powder is 0.3-3 microns, and the particle size requirement can be adjusted according to different application conditions of the slurry.
The invention also provides a preparation method of the glass powder for the positive silver main grid slurry of the N-type TOPCO crystalline silicon solar cell, which comprises the following steps:
(1) Weighing the components of the glass powder body according to the mass percentage, and then putting the components into a stirrer for mixing and stirring;
(2) Placing the uniformly mixed glass powder body raw materials into a platinum crucible, and then placing into presintering equipment for presintering;
(3) Placing the presintered crucible into a high-temperature furnace, and carrying out high-temperature smelting and heat preservation for a period of time to obtain a clarified glass melt;
(4) Pouring the glass melt into a pair roller machine for cold rolling, and collecting the cold-rolled glass fragments;
(5) Refining the glass fragments to an average particle size of 0.3-3 microns;
(6) And mixing the refined glass powder body with white carbon black to obtain the glass powder for the positive silver main grid slurry.
Preferably, in the step (1), stirring and mixing time is 10-30 minutes; the presintering temperature in the step (2) is 300-400 ℃ and the presintering time is 0.5-1 hour; the high-temperature smelting temperature in the step (3) is 900-1200 ℃, and the heat preservation time is 1-2 hours.
Preferably, in the step (5), the glass fragments are refined by adopting a ball mill wet grinding method or a jet mill, and in the step (6), the stirring and mixing time is 5-10 minutes.
Advantageous effects
According to the technical scheme, the method can be suitable for a low gram weight printing process of a TOPCO battery, the slurry manufactured by the manufactured glass powder can be sintered at 750-850 ℃, the Pb-Bi-B system glass powder is low in softening temperature, good in wettability to silicon chips and silver powder, good in compactness after sintering, and further improves the front welding tension of the battery piece, the addition of the white carbon black improves the printing line type height-width ratio, reduces current loss, and meanwhile, the nano-scale granularity of the white carbon black is far smaller than the granularity of the silver powder, so that the compactness after sintering of the slurry can be improved to a certain extent, the tension is further improved, and the problem that the tension is unqualified after the gram weight of the slurry is reduced is solved. In addition, the preparation method has simple preparation steps and low cost, and is suitable for industrial popularization and production.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The glass powder of the embodiment comprises the following components in percentage by weight: 52% PbO, 10% TeO 2 、13%Bi 2 O 3 、10%B 2 O 3 、2%CaO、1%CeO、2%SiO 2 、0.5%Li 2 O、5%V 2 O 5 、1%TiF 4 、3% MnO 2 、0.5%Ge 2 O 3 Mixing in a stirrer for 10 minutes, and placing the mixture into a platinum crucible after uniform mixing. Placing the crucible into presintering equipment, heating the presintering equipment to 350 ℃ for presintering for 1h, rapidly placing the presintered crucible into a high-temperature furnace for smelting at 1000 ℃, and preserving heat for 1h to obtain clarified glass melt. The glass melt is put into a pair roller machine for cold rolling,taking out glass fragments after cooling, wet grinding the glass fragments to an average particle size of 1.5 microns by using a ball mill, and mixing the obtained glass powder with a 1% white carbon black stirrer for 5 minutes to obtain the required glass powder;
weighing according to the following formula proportion: 85% of silver powder, 1% of glass powder, 13.5% of organic carrier and 0.5% of dispersing agent are weighed and added into a sample tank for manual pre-stirring, then the mixture is uniformly mixed in a planetary stirrer or other stirrer, then the mixture is dispersed to below 10 mu m on a three-roll machine, and the mixture is filtered by a 400-mesh screen to obtain the very uniform front main grid silver paste of the solar cell. The viscosity of the slurry was 160Pa.s (25 ℃), the number of N-type TOPCON cells tested was 500, three test tensile forces and aging tensile forces thereof were randomly extracted each, and the average value was taken, and the results of the production line (commercially available products) were compared, as shown in Table 1.
Example 2
The glass powder of the embodiment comprises the following components in percentage by weight: 48% Pb 2 O 3 、8% TeO 2 、18%Bi 2 O 3 、10%B 2 O 3 、2%CaO、1%CeO、2%SiO 2 、1%Li 2 O、5%V 2 O 5 、1%TiF 4 、3% MnO 2 、1%Ge 2 O 3 Mixing in a stirrer for 10 minutes, and placing the mixture into a platinum crucible after uniform mixing. Placing the crucible into presintering equipment, heating the presintering equipment to 350 ℃ for presintering for 1h, rapidly placing the presintered crucible into a high-temperature furnace for smelting at 1000 ℃, and preserving heat for 1h to obtain clarified glass melt. Putting the glass melt into a pair roller for cold rolling, taking out glass fragments after cooling, using a ball mill for wet grinding the glass fragments until the average particle size is 1.5 microns, and mixing the obtained glass powder with a 3% white carbon black stirrer for 5 minutes to obtain the required glass powder;
weighing according to the following formula proportion: 85% of silver powder, 1% of glass powder, 13.5% of organic carrier and 0.5% of dispersing agent are weighed and added into a sample tank for manual pre-stirring, then the mixture is uniformly mixed in a planetary stirrer or other stirrer, then the mixture is dispersed to be less than 10 mu m on a three-roll machine, and the mixture is filtered by a 400-mesh screen to obtain the very uniform front main grid silver paste of the solar cell. The viscosity of the slurry was 150Pa.s (25 ℃), the number of N-type TOPCON cells tested was 500, three test tensile forces and aging tensile forces thereof were randomly extracted each, and the average value was obtained, and the results of the production line (commercially available product) were compared, as shown in Table 1.
Example 3
The glass powder of the embodiment comprises the following components in percentage by weight: 44% Pb 3 O 4 、6% TeO 2 、15%Bi 2 O 3 、20%B 2 O 3 、2%CaO、1%CeO、2%SiO 2 、0.5%Li 2 O、5%V 2 O 5 、1%TiF 4 、3% MnO 2 、0.5%Ge 2 O 3 Mixing in a stirrer for 10 minutes, and placing the mixture into a platinum crucible after uniform mixing. Placing the crucible into presintering equipment, heating the presintering equipment to 350 ℃ for presintering for 1h, rapidly placing the presintered crucible into a high-temperature furnace for smelting at 1000 ℃, and preserving heat for 1h to obtain clarified glass melt. Putting the glass melt into a pair roller for cold rolling, taking out glass fragments after cooling, using a ball mill for wet grinding the glass fragments until the average particle size is 1.5 microns, and mixing the obtained glass powder with a 4% white carbon black stirrer for 5 minutes to obtain the required glass powder;
weighing according to the following formula proportion: 85% of silver powder, 1% of glass powder, 13.5% of organic carrier and 0.5% of dispersing agent are weighed and added into a sample tank for manual pre-stirring, then the mixture is uniformly mixed in a planetary stirrer or other stirrer, then the mixture is dispersed to be less than 10 mu m on a three-roll machine, and the mixture is filtered by a 400-mesh screen to obtain the very uniform front main grid silver paste of the solar cell. The viscosity of the slurry was 155Pa.s (25 ℃), the number of N-type TOPCON cells tested was 500, three test tensile forces and aging tensile forces thereof were randomly extracted each, and the average value was obtained, and the results of the production line (commercially available products) were compared, as shown in Table 1.
(the organic carrier mentioned in examples 1-3 is a common organic carrier in the field of conductive silver paste for solar cells, and belongs to the prior art, and the dispersing agent is TDO)
Table 1 tensile properties of solar cells for each example and comparative production line example
| tension/N | Aged tension/N | |
| Production line | 2.48 | 1.99 |
| Example 1 | 2.81 | 2.42 |
| Example 2 | 3.02 | 2.60 |
| Example 3 | 3.11 | 2.94 |
As can be seen from the tensile test result of the battery piece, the slurry prepared from the system glass powder has high tensile force and aging tensile force, which indicates that the problem that the slurry is unqualified in tensile force under low gram weight is effectively solved. In conclusion, the glass powder is suitable for the low gram weight printing process of the TOPCO battery piece, and the front tension of the battery is effectively improved.
The above description is illustrative of the invention and is not to be construed as limiting, and it will be understood by those skilled in the art that many modifications, changes or equivalents may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (7)
1. The glass powder for the positive silver main grid slurry of the N-type TOPCON crystalline silicon solar cell is characterized in that the glass powder body comprises the following components in percentage by weight: 44-60% PbO/Pb 2 O 3 /Pb 3 O 4 ，0～10%TeO 2 、13～20％Bi 2 O 3 、10～30%B 2 O 3 、0.1～10%CaO、0～3%CeO 2 、0～10%SiO 2 、0～10%Al 2 O 3 、0.1～15% (Li 2 O+Na 2 O+K 2 O), 5-60% of a tension aid and 1-10% of a sintering property adjusting aid, wherein the glass powder body is fully mixed with 1% -5% of white carbon black to obtain glass powder for positive silver main grid slurry;
the tension aid is V 2 O 5 、Sb 2 O 3 、NaF、LiF、PbF 2、 AlF 3 、TiF 4 One or more than two of the components in any proportion;
the sintering property regulating auxiliary agent is TiO 2 、MnO 2 、WO 3 、Ge 2 O 3 、Fe 2 O 3 One or more than two of ZnO and NiO in any proportion.
2. The glass powder for the positive silver main grid paste of the N-type TOPCON crystalline silicon solar cell, which is disclosed in claim 1, is characterized in that the glass powder has a Tg temperature of 320-440 ℃ and a glass powder Ts temperature of 480-580 ℃.
3. The glass powder for the positive silver main grid paste of the N-type TOPCO crystalline silicon solar cell, which is disclosed in claim 1, is characterized in that the average particle size of the glass powder is 0.3-3 microns.
4. A method for preparing glass powder for positive silver primary grid paste of N-type TOPCON crystalline silicon solar cell according to any one of claims 1-3, comprising the following steps:
(1) Weighing the components of the glass powder body according to the mass percentage, and then putting the glass powder body into a stirrer for mixing and stirring;
(2) Placing the uniformly mixed glass powder body raw materials into a platinum crucible, and then placing into presintering equipment for presintering;
(3) Placing the presintered crucible into a high-temperature furnace, and carrying out high-temperature smelting and heat preservation for a period of time to obtain a clarified glass melt;
(4) Pouring the glass melt into a pair roller machine for cold rolling, and collecting the cold-rolled glass fragments;
(5) Refining the glass fragments to an average particle size of 0.3-3 microns;
(6) And stirring and mixing the refined glass powder with white carbon black to obtain the glass powder for the positive silver main grid slurry.
5. The preparation method of the glass powder for the positive silver main grid paste of the N-type TOPCON crystalline silicon solar cell, which is disclosed in claim 4, is characterized in that the stirring and mixing time in the step (1) is 10-30 minutes; in the step (2), the presintering temperature is 300-400 ℃ and the presintering time is 0.5-1 hour.
6. The preparation method of the glass powder for the positive silver main grid paste of the N-type TOPCON crystalline silicon solar cell, which is disclosed in claim 4, is characterized in that the high-temperature smelting temperature in the step (3) is 900-1200 ℃, and the heat preservation time is 1-2 hours.
7. The preparation method of the glass powder for the positive silver main grid slurry of the N-type TOPCON crystalline silicon solar cell, which is disclosed in claim 4, is characterized in that in the step (5), a ball mill wet grinding or a jet mill is adopted to refine glass fragments; in the step (6), stirring and mixing time is 5-10 minutes.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290120A (en) * | 2011-06-08 | 2011-12-21 | 常州斯威克光伏新材料有限公司 | Silver paste for solar cell and preparation method thereof |
| CN106935309A (en) * | 2015-12-29 | 2017-07-07 | 湖南利德电子浆料股份有限公司 | Passivating back crystal silicon solar energy battery aluminium paste and preparation method thereof |
| CN111587461A (en) * | 2017-11-06 | 2020-08-25 | LS-Nikko铜制炼株式会社 | Conductive paste for solar cell electrode and solar cell manufactured using same |
| CN114524618A (en) * | 2022-03-23 | 2022-05-24 | 浙江晶科新材料有限公司 | Glass powder for TOPCON N-type crystalline silicon solar cell front silver paste and preparation method thereof |
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| JP6958257B2 (en) * | 2017-11-08 | 2021-11-02 | Ａｇｃ株式会社 | Glass compositions, glass powders, conductive pastes and solar cells |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290120A (en) * | 2011-06-08 | 2011-12-21 | 常州斯威克光伏新材料有限公司 | Silver paste for solar cell and preparation method thereof |
| CN106935309A (en) * | 2015-12-29 | 2017-07-07 | 湖南利德电子浆料股份有限公司 | Passivating back crystal silicon solar energy battery aluminium paste and preparation method thereof |
| CN111587461A (en) * | 2017-11-06 | 2020-08-25 | LS-Nikko铜制炼株式会社 | Conductive paste for solar cell electrode and solar cell manufactured using same |
| CN114524618A (en) * | 2022-03-23 | 2022-05-24 | 浙江晶科新材料有限公司 | Glass powder for TOPCON N-type crystalline silicon solar cell front silver paste and preparation method thereof |
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