CN1152423C - 半导体器件及对准于深存储沟槽的掩埋条的改进工艺 - Google Patents
半导体器件及对准于深存储沟槽的掩埋条的改进工艺 Download PDFInfo
- Publication number
- CN1152423C CN1152423C CNB991267680A CN99126768A CN1152423C CN 1152423 C CN1152423 C CN 1152423C CN B991267680 A CNB991267680 A CN B991267680A CN 99126768 A CN99126768 A CN 99126768A CN 1152423 C CN1152423 C CN 1152423C
- Authority
- CN
- China
- Prior art keywords
- carrier ring
- layer
- groove
- dielectric material
- deep trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003860 storage Methods 0.000 title claims abstract description 5
- 238000005516 engineering process Methods 0.000 title description 39
- 238000000034 method Methods 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 28
- 239000003990 capacitor Substances 0.000 claims abstract description 7
- 239000003989 dielectric material Substances 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 28
- 208000005189 Embolism Diseases 0.000 claims description 23
- 150000004767 nitrides Chemical class 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 238000001020 plasma etching Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 239000003518 caustics Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 21
- 239000011229 interlayer Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 2
- 125000006850 spacer group Chemical group 0.000 abstract 9
- 238000005260 corrosion Methods 0.000 description 14
- 230000007797 corrosion Effects 0.000 description 14
- 230000003071 parasitic effect Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/233,887 US6451648B1 (en) | 1999-01-20 | 1999-01-20 | Process for buried-strap self-aligned to deep storage trench |
US09/233,887 | 1999-01-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1285618A CN1285618A (zh) | 2001-02-28 |
CN1152423C true CN1152423C (zh) | 2004-06-02 |
Family
ID=22879079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991267680A Expired - Fee Related CN1152423C (zh) | 1999-01-20 | 1999-12-16 | 半导体器件及对准于深存储沟槽的掩埋条的改进工艺 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6451648B1 (zh) |
EP (1) | EP1022782A3 (zh) |
JP (1) | JP3630399B2 (zh) |
KR (1) | KR20000071248A (zh) |
CN (1) | CN1152423C (zh) |
TW (1) | TW459384B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6204140B1 (en) * | 1999-03-24 | 2001-03-20 | Infineon Technologies North America Corp. | Dynamic random access memory |
KR100339779B1 (ko) * | 1999-09-29 | 2002-06-05 | 한신혁 | 다이나믹 랜덤 억세스 메모리 및 그 제조 방법과 정렬 방법 |
DE10111755C1 (de) * | 2001-03-12 | 2002-05-16 | Infineon Technologies Ag | Verfahren zur Herstellung einer Speicherzelle eines Halbleiterspeichers |
TW506059B (en) * | 2001-09-25 | 2002-10-11 | Promos Techvologies Inc | Forming method for shallow trench |
DE10228547C1 (de) * | 2002-06-26 | 2003-10-30 | Infineon Technologies Ag | Verfahren zur Herstellung eines vergrabenen Strap-Kontakts in einer Speicherzelle |
US6979851B2 (en) * | 2002-10-04 | 2005-12-27 | International Business Machines Corporation | Structure and method of vertical transistor DRAM cell having a low leakage buried strap |
DE10255847B3 (de) * | 2002-11-29 | 2004-07-15 | Infineon Technologies Ag | Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen, der über einen vergrabenen Kontakt einseitig mit einem Substrat elektrisch verbunden ist, insbesondere für eine Halbleiterspeicherzelle |
TWI278069B (en) * | 2005-08-23 | 2007-04-01 | Nanya Technology Corp | Method of fabricating a trench capacitor having increased capacitance |
US7898014B2 (en) * | 2006-03-30 | 2011-03-01 | International Business Machines Corporation | Semiconductor device structures with self-aligned doped regions and methods for forming such semiconductor device structures |
US20080048186A1 (en) * | 2006-03-30 | 2008-02-28 | International Business Machines Corporation | Design Structures Incorporating Semiconductor Device Structures with Self-Aligned Doped Regions |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5395786A (en) * | 1994-06-30 | 1995-03-07 | International Business Machines Corporation | Method of making a DRAM cell with trench capacitor |
US5525531A (en) * | 1995-06-05 | 1996-06-11 | International Business Machines Corporation | SOI DRAM with field-shield isolation |
US5614431A (en) | 1995-12-20 | 1997-03-25 | International Business Machines Corporation | Method of making buried strap trench cell yielding an extended transistor |
US5909044A (en) | 1997-07-18 | 1999-06-01 | International Business Machines Corporation | Process for forming a high density semiconductor device |
-
1999
- 1999-01-20 US US09/233,887 patent/US6451648B1/en not_active Expired - Fee Related
- 1999-12-16 CN CNB991267680A patent/CN1152423C/zh not_active Expired - Fee Related
-
2000
- 2000-01-07 TW TW089100178A patent/TW459384B/zh not_active IP Right Cessation
- 2000-01-14 JP JP2000005490A patent/JP3630399B2/ja not_active Expired - Fee Related
- 2000-01-17 KR KR1020000001942A patent/KR20000071248A/ko active IP Right Grant
- 2000-01-18 EP EP00100875A patent/EP1022782A3/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR20000071248A (ko) | 2000-11-25 |
JP3630399B2 (ja) | 2005-03-16 |
EP1022782A2 (en) | 2000-07-26 |
JP2000216354A (ja) | 2000-08-04 |
TW459384B (en) | 2001-10-11 |
CN1285618A (zh) | 2001-02-28 |
EP1022782A3 (en) | 2000-08-23 |
US6451648B1 (en) | 2002-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1045349C (zh) | 具有覆埋位线元件的半导体器件及其制备方法 | |
CN100536142C (zh) | 形成凹进式通路装置的方法 | |
CN101952958B (zh) | 包括鳍式晶体管的***及装置以及其使用、制作及操作方法 | |
US8552526B2 (en) | Self-aligned semiconductor trench structures | |
CN1206721C (zh) | 动态随机存取存储器 | |
CN1304177A (zh) | 具有自对齐到存储沟槽的字线的垂直动态存储单元 | |
KR101935007B1 (ko) | 반도체 소자 및 그 제조 방법 | |
CN1149679C (zh) | 半导体存储器件及其制造方法 | |
CN1317769C (zh) | 半导体存储器件及其制造方法 | |
CN1152423C (zh) | 半导体器件及对准于深存储沟槽的掩埋条的改进工艺 | |
KR101129955B1 (ko) | 반도체 소자 및 그 제조 방법 | |
TW202018860A (zh) | 半導體結構及其製造方法 | |
KR101140057B1 (ko) | 반도체 소자 및 그 제조 방법 | |
CN1343371A (zh) | Dram单元装置及其制造方法 | |
KR20120012593A (ko) | 반도체 소자 및 그 제조 방법 | |
CN101740485B (zh) | 制造具有垂直栅极的半导体器件的方法 | |
CN1841672A (zh) | 增加沟槽表面区域的选择性蚀刻 | |
US20210335803A1 (en) | Integrated Circuitry, Memory Arrays Comprising Strings Of Memory Cells, Methods Used In Forming Integrated Circuitry, And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells | |
CN1885503A (zh) | 用于在半导体器件中形成接触孔的方法 | |
US9269819B2 (en) | Semiconductor device having a gate and a conductive line in a pillar pattern | |
US20110186970A1 (en) | Method for manufacturing a semiconductor device | |
CN1832134A (zh) | 于半导体装置中形成栅电极图案的方法 | |
CN1841698A (zh) | 用于制造半导体器件的方法 | |
US7056802B2 (en) | Method for fabricating a trench capacitor with an insulation collar which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory cell | |
KR101019701B1 (ko) | 반도체 소자 및 그의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
CI01 | Publication of corrected invention patent application |
Correction item: Second applicant Correct: Infineon Technologies Corporation False: Siemens AG Number: 9 Page: 87 Volume: 17 |
|
CI02 | Correction of invention patent application |
Correction item: Second applicant Correct: Infineon Technologies Corporation False: Siemens AG Number: 9 Page: The title page Volume: 17 |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1035067 Country of ref document: HK |