CN115224584A - Electro-absorption modulated laser, light emitting module and optical terminal - Google Patents
Electro-absorption modulated laser, light emitting module and optical terminal Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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Abstract
The embodiment of the application discloses an electroabsorption modulation laser. An electro-absorption modulated laser includes a laser region, an electrical isolation region, and an electro-absorption modulator region. An electrically isolated region is disposed between the laser region and the electro-absorption modulator region. The laser region is used for generating laser light. The laser light is coupled into an electro-absorption modulator region connected to the laser region. The electro-absorption modulator area is used for modulating laser to obtain signal light. A waveguide layer is included beneath the first active layer of the electro-absorption modulator region. In the present application, the electro-absorption modulator region may couple a portion of the laser light into the waveguide layer, thereby increasing the saturation absorption power of the electro-absorption modulator and increasing the output power of the electro-absorption modulated laser.
Description
Technical Field
The present application relates to the field of optical communications, and more particularly, to an electro-absorption modulated laser, an optical transmission assembly, and an optical terminal.
Background
In an optical communication system, an optical transmission terminal generates signal light by a modulator. The signal light is transmitted to the light receiving terminal through the optical fiber. The light receiving terminal demodulates the signal light through the demodulator to obtain an electric signal.
An electro-absorption modulated laser is a monolithically integrated externally modulated light source. The electro-absorption modulated laser includes a laser region and an electro-absorption modulator region. Laser light generated by the laser section is coupled into an electro-absorption modulator section that is connected to the laser section. When the electro-absorption modulator section is applied with an electro-modulation signal, the electro-absorption modulator section modulates the laser light to obtain signal light. The output power of the laser area is the power of laser, and the output power of the electro-absorption modulation laser or the electro-absorption modulator area is the power of signal light. To a certain extent, the power of the laser light is proportional to the power of the signal light. Therefore, the power of the signal light can be increased by increasing the power of the laser light. However, as the power of the laser light increases, the active layer of the electro-absorption modulator region may go into saturation, thereby limiting the output optical power of the electro-absorption modulated laser.
Disclosure of Invention
The application provides an electro-absorption modulated laser, an optical transmission component and an optical terminal. By adding the waveguide layer in the material structure of the modulator region, the technical scheme disclosed by the application can improve the laser power when the electro-absorption modulator region enters a saturated state, and further improve the output power of the electro-absorption modulation laser.
A first aspect of the present application provides an electroabsorption modulated laser. The electro-absorption modulated laser includes a laser region, an electrically isolated region and an electro-absorption modulator region on the same semiconductor substrate. The electric isolation area is arranged between the laser area and the electro-absorption modulator area and is used for realizing the electric isolation of the laser area and the electro-absorption modulator area. The laser region is used for generating laser light. The laser light is coupled into an electro-absorption modulator region that is connected to the laser region. The electro-absorption modulator area is used for modulating laser to obtain signal light. Wherein the electro-absorption modulator region includes a first active layer and a waveguide layer. The waveguide layer is disposed between the substrate and the first active layer.
In the present application, the optical confinement factor of the first active layer of the electro-absorption modulator region is reduced due to the introduction of the waveguide layer. At this time, part of the laser light emitted from the laser region is coupled into the waveguide layer, increasing the saturated absorption power of the electro-absorption modulator region. Therefore, the output power of the electroabsorption modulation laser can be improved.
In an alternative form of the first aspect, the refractive index of the waveguide layer is less than the effective refractive index of the first active layer. The waveguide layer absorbs part of the introduced laser light, thereby reducing the power of the signal light to some extent and generating loss. The application defines that the refractive index of the waveguide layer is smaller than the effective refractive index of the first active layer, and the loss of laser in the waveguide layer is reduced.
In an alternative form of the first aspect, the electro-absorption modulator region has a length in the first direction greater than 300 microns. The first direction is a propagation direction of the laser light in the laser region. The extinction ratio of the signal light can be improved by increasing the length of the electro-absorption modulator area.
In an alternative form of the first aspect, the electro-absorption modulator region comprises a first P electrode and a first N electrode. The first P electrode and the first N electrode are in a traveling wave electrode structure. Wherein, when the length of the electro-absorption modulator region is longer, the parasitic capacitance of the electro-absorption modulator region is larger, thereby reducing the modulation bandwidth of the electro-absorption modulator region. When the first P electrode and the first N electrode are in a traveling wave electrode structure, the influence of the parasitic capacitance of the electrodes on the modulation bandwidth can be reduced. And when the transmission speed of the electrical modulation signal in the electrode is equal to the transmission speed of the optical signal in the waveguide and the phases of the electrical modulation signal and the optical signal are consistent, the modulation efficiency is highest and the theoretical modulation bandwidth is infinite.
In an alternative form of the first aspect, the waveguide layer comprises an upper cladding layer and a core layer. The upper cladding layer is disposed between the first active layer and the core layer. When the upper cladding layer has the same structure as the substrate material, the thickness of the core layer can be reduced by adding the upper cladding layer. Also, the processing cost of the core layer is generally greater than the processing cost of the upper cladding layer of the same thickness. This can reduce the processing cost.
In an alternative form of the first aspect, the upper cladding layer has a refractive index less than the effective refractive index of the first active layer. The upper cladding absorbs part of the introduced laser light, thereby reducing the power of the signal light to some extent and generating loss. The application defines that the refractive index of the upper cladding is smaller than the effective refractive index of the first active layer, and the loss of laser light in the upper cladding is reduced.
In an alternative form of the first aspect, the waveguide layer further comprises a lower cladding layer. The lower cladding layer is disposed between the substrate and the core layer. Wherein the thickness of the core layer can be reduced by increasing the thickness of the lower cladding layer. Also, the processing cost of the core layer is generally greater than the processing cost of the lower cladding layer of the same thickness. Therefore, the processing cost can be reduced.
In an alternative form of the first aspect, the refractive index of the lower cladding layer is less than the effective refractive index of the first active layer. In which the lower cladding absorbs part of the introduced laser light, thereby reducing the power of the signal light to some extent, resulting in loss. The application limits the refractive index of the lower cladding to be smaller than the effective refractive index of the first active layer, and reduces the loss of laser in the lower cladding.
In an alternative form of the first aspect, the upper cladding layer has a thickness of between 0.01 and 5 microns.
In an alternative form of the first aspect, the waveguide layer has a thickness of between 0.03 microns and 6 microns.
In an alternative form of the first aspect, the electro-absorption modulator region is a ridge-type structure. The electro-absorption modulator region includes a first portion and a second portion underlying the first portion. The width of the second portion is greater than the width of the first portion. The first active layer belongs to the first portion. The substrate belongs to the second part. The waveguide layers include a first waveguide layer and a second waveguide layer. The first waveguide layer belongs to the first section and the second waveguide layer belongs to the second section. Wherein, because the waveguide layer may have a thicker thickness, there may be a greater process tolerance in etching the first portion during processing of the electro-absorption modulator region.
In an alternative form of the first aspect, the second portion is a ridge-type structure including a third portion and a fourth portion underlying the third portion. The fourth portion has a width greater than a width of the third portion. The second waveguide layer belongs to the third section and the substrate belongs to the fourth section. This can change the ratio of the signal light in the first active layer and the waveguide layer according to the width of the third portion, thereby flexibly controlling the output power of the electroabsorption modulated laser.
In an alternative form of the first aspect, the difference between the width of the first portion and the width of the third portion is greater than 4 microns to better ensure process tolerances during processing.
In an alternative form of the first aspect, the first active layer comprises a first quantum well layer. The laser region includes a second active layer including a second quantum well layer. The projections of the first quantum well layer and the second quantum well layer on the first plane have a common region. The first plane is perpendicular to the upper surface of the substrate. The normal to the first plane is parallel to the propagation direction of the laser light in the laser area.
In an alternative form of the first aspect, the waveguide layer is formed from indium gallium arsenide phosphide (InGaAsP) or indium gallium aluminum arsenide (InGaAlAs).
In an alternative form of the first aspect, the waveguide layer extends to an interface of the electrically isolated region and the laser region. When the waveguide layer extends to the junction of the electric isolation region and the laser region, the waveguide layer is arranged below the lower optical limiting layer in the electric isolation region. The waveguide layer has the function of increasing the output power of the electroabsorption modulated laser. Therefore, the utilization rate of the electric isolation region can be improved.
In an alternative form of the first aspect, the laser region has a length of 400 to 2000 microns. The longer the length of the laser region, the greater the output power of the laser region in general. The output power of the laser region determines the output power of the electroabsorption modulated laser. The application increases the output power of an electroabsorption modulated laser by adding a waveguide layer. Accordingly, the present application further increases the output power of the laser region by increasing the length of the laser region.
A second aspect of the present application provides a light emitting assembly. The light emitting assembly comprises a light detector and an electroabsorption modulated laser as described in the first aspect or any embodiment of the first aspect. Wherein, the signal light generated by the electroabsorption modulation laser comprises a back light and a forward light. An electroabsorption modulated laser is used to output forward light. The light detector is used for receiving the back light and converting the back light into an electric signal.
A third aspect of the present application provides an optical terminal. The optical terminal includes a processor and a light emitting assembly. The optical transmission assembly comprises an electroabsorption modulated laser as described in the first aspect or any one of the embodiments of the first aspect. The processor is used for providing an electric modulation signal for the electric absorption modulation laser. The electric absorption modulation laser is used for modulating the laser according to the electric modulation signal to obtain signal light.
Drawings
Fig. 1 is a schematic diagram of a passive optical network system framework of an application scenario of the present application;
FIG. 2 is a schematic diagram of one configuration of an electroabsorption modulated laser as provided herein;
FIG. 3 is a side view of an electroabsorption modulated laser as provided herein;
FIG. 4 is a schematic cross-sectional view of an electro-absorption modulator region of a ridge structure as provided herein;
FIG. 5 is a schematic cross-sectional view of an electro-absorption modulator region of a double-ridge configuration as provided herein;
FIG. 6 is a schematic cross-sectional view of an electro-absorption modulator region of a ridge structure including an upper cladding layer as provided herein;
FIG. 7 is a schematic cross-sectional view of an electro-absorption modulator region of a double-ridge structure including an upper cladding layer as provided herein;
FIG. 8 is a schematic diagram of an electrical connection for an electro-absorption modulator region as provided herein;
FIG. 9 is another schematic electrical connection diagram of an electro-absorption modulator region as provided herein;
FIG. 10 is a top view of an electroabsorption modulated laser as provided herein;
FIG. 11 is a schematic view of a light emitting assembly provided herein;
fig. 12 is a schematic structural diagram of an optical terminal provided in the present application.
Detailed Description
The application provides an electro-absorption modulated laser, an optical transmission component and an optical terminal. Through introducing the waveguide layer, the technical scheme of this application can improve the saturation absorption optical power of electroabsorption modulator, and then improves the output power of electroabsorption modulation laser.
The electro-absorption modulated laser can be applied to the field of optical communication. For example, the present invention can be applied to a Passive Optical Network (PON) system. Fig. 1 is a schematic diagram of a PON system framework according to an application scenario of the present application. As shown in fig. 1, the PON system includes an Optical Line Terminal (OLT) 101, an Optical Distribution Network (ODN) 102, and Optical terminals 103 to 105. The PON system is a point-to-multipoint single-fiber bidirectional optical access network (in fig. 1, one OLT corresponds to 3 optical terminals). The ODN 102 in a PON system uses optical fibers and passive components (e.g., splitter/combiner 1021). In the PON system, the optical splitter/combiner 1021 is a point-to-multipoint core device, and the PON system separates and collects signal light transmitted through a network using the optical splitter/combiner 1021. Specifically, in the downstream direction, the OLT 101 distributes signal light to all optical terminals through the optical splitter/combiner 1021; in the uplink direction, the signal light from each optical terminal is coupled to the same optical fiber through the optical splitter/combiner 1021 in a time-sharing manner, and transmitted to the OLT 101. The Optical terminals 103 to 105 may be Optical Network Units (ONUs) or Optical Network Terminals (ONTs). It should be understood that an optical terminal may also be referred to as an optical network terminal or a PON client side device, etc. The present application is not limited thereto.
During the transmission of the signal light, the optical fiber and the optical splitter/combiner 1021 generate loss. The amount of loss is generally proportional to the distance between OLT 101 and the optical termination and the splitter/combiner splitting ratio. Therefore, increasing the optical transmission power of the OLT 101 or the optical terminal is advantageous for increasing the coverage area of the PON system. The OLT 101 or optical terminal may generate signal light using an electro-absorption modulated laser. The electro-absorption modulated laser includes a laser region and an electro-absorption modulator region. The output power of the laser area is the power of the laser, and the output power of the electro-absorption modulation laser or the electro-absorption modulator area is the power of the signal light. To a certain extent, the power of the laser light is proportional to the power of the signal light. Therefore, the power of the signal light can be increased by increasing the power of the laser light. However, as the power of the laser light increases, the active layer of the electro-absorption modulator region may enter a saturation state, thereby limiting the output power of the electro-absorption modulated laser.
To this end, an electroabsorption modulated laser is provided in the present application. The electroabsorption modulated laser includes a laser region, an electrical isolation region, and an electroabsorption modulator region on the same semiconductor substrate. The electro-absorption modulator region includes a waveguide layer and a first active layer. The waveguide layer is disposed between the substrate and the first active layer. At this time, the electro-absorption modulator region can introduce part of the laser light into the waveguide layer, so as to increase the saturated absorption light power of the electro-absorption modulator. Therefore, the output power of the electroabsorption modulation laser can be improved.
It should be understood that the PON system in fig. 1 is only one application scenario for the electro-absorption modulated laser in the present application. In practical applications, the electroabsorption modulated laser can also be applied to other scenes. For example, optical fiber communication between a gateway and a wireless Access Point (AP), optical fiber communication between an undersea optical cable or a base station, and the like.
Fig. 2 is a schematic diagram of a structure of an electroabsorption modulated laser provided in the present application. As shown in fig. 2, the electro-absorption modulated laser includes an electro-absorption modulator region, an electrical isolation region, and a laser region on the same semiconductor substrate 202 in the positive Z-axis direction. The boundary between the electro-absorption modulator region and the electrically isolated region lies in plane 207 and the boundary between the electrically isolated region and the laser region lies in plane 208. In the positive direction of the Y-axis, the electro-absorption modulated laser includes an N electrode layer 201, a substrate 202, an active layer, a ridge waveguide, and a P electrode layer.
Wherein the active layer comprises an upper respective optical confinement layer, a quantum well layer and a lower respective optical confinement layer. The upper and lower respective optical confinement layers are used to provide carriers to the quantum well layer, confining photons in the vertical direction. The thickness of the upper or lower optical confinement layer is between 0.05 and 0.1 microns. To reduce losses, the upper and lower respective optical confinement layers may be unintentionally doped quaternary materials. Such as InGaAlAs, which is graded in index of refraction. The quantum well layer is used to convert electrical energy into photons. The quantum well layer is a quaternary material which is not intentionally doped. Such as InGaAlAs, which is graded in index of refraction. The quantum well layer may be a multiple quantum well active region layer. The quantum well layer is between 0.1 microns and 0.2 microns thick.
The P electrode layer is also referred to as an upper electrode layer. The material of the P electrode layer is titanium, platinum, gold alloy, or the like. The thickness of the P electrode layer is between 0.5 and 2 microns. The N electrode layer is also referred to as a lower electrode layer. The N electrode layer is made of gold germanium nickel alloy or gold and the like. The thickness of the N electrode layer is between 0.2 microns and 0.5 microns. The N electrode layers of the laser area and the electro-absorption modulator area are in a common electrode structure (the same electrode). For the traveling wave electrode modulator, the N electrode layer may be located on the front surface of the electroabsorption modulated laser, specifically please refer to the following description related to the traveling wave electrode structure.
The laser region is used for generating laser light, and the laser region can be an excitation distributed feedback laser region or a distributed Bragg reflection laser region. In the positive direction of the Y-axis, the laser region includes a second N electrode layer, a second substrate, a second active layer, a second ridge waveguide, and a second P electrode layer 210. The second active layer includes a second upper respective light confinement layer, a second quantum well layer, and a second lower respective light confinement layer. The laser region produces laser light when a forward bias current is applied across the laser region that exceeds its threshold. Specifically, when a sufficiently strong forward bias current is applied to the second P electrode layer 210, the second quantum well layer functions as a resonator to generate stable laser oscillation. The second quantum well layer generates stimulated radiation through laser oscillation, and then generates laser. The left end face (plane 208) of the laser region outputs laser light. The laser light is directed into the electro-absorption modulator region after passing through the electro-isolation region.
The electro-absorption modulator area is used for modulating laser to obtain signal light. In the positive direction of the Y-axis, the electro-absorption modulator region includes a first N electrode layer, a first substrate, a waveguide layer 203, a first active layer, a first ridge waveguide, and a first P electrode layer 209. The first active layer comprises a first upper respective light confining layer 106, a first quantum well layer 205 and a first lower respective light confining layer 204. The waveguide layer is also referred to as a passive waveguide layer. The waveguide layer can be made of InGaAsP or InGaAlAs. After the laser light is directed into the electro-absorption modulator region, a portion of the laser light is directed into the first active layer and another portion of the laser light is directed into the waveguide layer. When the electro-absorption modulator section is applied with an electro-modulation signal, the electro-absorption modulator section modulates the laser light to obtain signal light.
The waveguide layer absorbs a part of the introduced laser light, thereby reducing the power of the signal light to some extent, resulting in loss. Specifically, after a portion of the laser light is introduced into the waveguide layer, the waveguide layer absorbs the portion of the laser light, causing a power drop of the laser light. The application may define that the refractive index of the waveguide layer is smaller than the effective refractive index of the first active layer, thereby reducing the power of the laser in the waveguide layer. In case the power of the laser light in the waveguide layer is reduced, the losses in the waveguide layer will also be reduced. Wherein, when the waveguide layer includes an upper cladding layer and/or a lower cladding layer, the refractive index of the waveguide layer refers to an effective refractive index.
An electrically isolated region is located between the laser region and the electro-absorption modulator region. Since the laser region is positively biased and the electro-absorption modulator region is negatively biased, the laser region and the electro-absorption modulator region require an electrically isolated region of high resistance to reduce crosstalk. The electrically isolated regions may be deep etched grooves or ion implanted to form the isolated regions. The electrically isolated region includes, in a positive Y-axis direction, a first N-electrode layer, a first substrate, a waveguide layer, a first active layer, and a first ridge waveguide. The electrical isolation region isolates the electrical modulation signal from crosstalk of the laser bias current by electrically isolating the laser region from the electro-absorption modulator region. Specifically, the electrical isolation region isolates electrical connection of the first P electrode layer and the second P electrode layer. Also, when a contact layer is included between the first ridge waveguide and the first P electrode layer, the electrical isolation region may not include the contact layer.
In other embodiments, the right end face of the laser region is coated with a highly reflective film. The high-reflection film is used for improving the reflectivity of the right end face of the laser area and improving the output power of the laser area. The left end face of the electro-absorption modulator region may be coated with an anti-reflection film. The signal light output by the electro-absorption modulator region is output at the left end face. By adding the antireflection film, the reflection loss of signal light is reduced, and the output power of the electro-absorption modulator region is improved.
It should be understood that the electro-absorption modulated laser shown in fig. 2 is only one example. In practical applications, those skilled in the art can adapt the electroabsorption modulated laser according to requirements.
For example, as shown in fig. 2, the first quantum well layer and the second quantum well layer belong to the same quantum well layer. In practical applications, the first quantum well layer and the second quantum well layer may belong to different quantum well layers. Specifically, when the first quantum well layer and the second quantum well layer belong to different quantum well layers, the first quantum well layer and the second quantum well layer may include one or more of the following discrimination points. The first and second quantum well layers have different thicknesses. The first quantum well layer and the second quantum well layer are of different materials. In the case where the thicknesses of the first quantum well layer and the second quantum well layer are the same, there is a misalignment between the first quantum well layer and the second quantum well layer in the Y-axis direction, or a projection of the first quantum well layer on the plane 207 and a projection of the second quantum well layer on the plane 207 do not coincide. Similarly, the first upper respective optical confinement layer and the second upper respective optical confinement layer may belong to different respective optical confinement layers. The first lower respective optical confinement layer and the second lower respective optical confinement layer may belong to different respective optical confinement layers.
For example, as shown in fig. 2, the first active layer, the waveguide layer, the first N electrode layer, and the first ridge waveguide extend to the plane 208. In practice, the second active layer, the waveguide layer, the second N-electrode layer and the second ridge waveguide may extend to the plane 207. At this time, in the positive direction of the Y-axis, the electrically isolated region includes the second N electrode layer, the second substrate, the waveguide layer, the second active layer, and the second ridge waveguide. It is to be understood that in practical applications the second active layer, the waveguide layer, the second N-electrode layer and the second ridge waveguide may extend to the middle region of the isolation region. At this time, the electrically isolated region includes, in the positive direction of the Y axis, the first N electrode layer, the second N electrode layer, the first substrate, the second substrate, the waveguide layer, the first active layer, the second active layer, the first ridge waveguide, and the second ridge waveguide.
For example, as shown in fig. 2, the first N electrode layer extends to the plane 208, and the second N electrode layer extends to the plane 208. The first N electrode layer and the second N electrode layer belong to the same N electrode layer. In practical applications, the electrically isolated region may not include the first N electrode layer. At this time, the first N electrode layer extends to the plane 207, and the second N electrode layer extends to the plane 208. The second N electrode layer and the first N electrode layer are isolated by an isolation region.
For example, fig. 3 is a side view of an electroabsorption modulated laser as provided herein. As shown in fig. 3, the electroabsorption modulated laser further comprises a grating 302, a capping layer 303 and a contact layer 304. The waveguide layer 203 includes, among other things, a lower cladding layer 301 and a core layer 305. The material of the lower cladding layer 301 may be indium phosphide InP. The lower cladding layer 301 is divided by the plane 208 into a first lower cladding layer and a second lower cladding layer. The electro-absorption modulator region and the electrically isolated region comprise a first lower cladding layer and the laser region comprises a second lower cladding layer. Grating 302 is located in the laser region. The grating 302 is used for selecting a mode of the laser to realize single-mode lasing. The material of the cap layer 303 may be InP. The upper cap layer 303 is located between the upper respective optical confinement layer and the contact layer 304. The contact layer 304 has a thickness between 0.05 microns and 0.3 microns. To facilitate ohmic contact with the P electrode layer, the contact layer 304 is heavily doped In 0.53 Ga 0.47 As. The doping concentration is more than 1E19cm -3 。
In this application, the output power of the electroabsorption modulated laser can be increased by adding a waveguide layer. However, the present application may reduce the extinction ratio of the signal light to some extent. Specifically, the Extinction Ratio (ER) of the signal light is calculated as follows:
ER＝4.343×Γ×[α QW (V off )－α QW (V on )]×L
wherein Γ is the optical confinement factor of the second quantum well layer. Alpha (alpha) ("alpha") QW (V off ) The absorption coefficient of the electro-absorption modulator section when a low level signal is applied. Alpha (alpha) ("alpha") QW (V on ) The absorption coefficient of the electro-absorption modulator section when a high level signal is applied. L is the length of the electro-absorption modulator region. The optical confinement factor of the second quantum well layer is reduced after the addition of the waveguide layer. At this time, it can be seen from the above equation that ER of the signal light decreases. To this end, the present application increases ER by increasing the length of the electro-absorption modulator region. In particular, the present application may define a length of the electro-absorption modulator region in the first direction to be greater than 300 microns, or greater than 700 microns. The first direction being the propagation of laser light in the laser zoneThe direction of the broadcast. The first direction is the negative direction of the Z-axis in fig. 2.
In the foregoing fig. 2, the electro-absorption modulator regions are ridge-type structures. The electro-absorption modulator region includes a first portion and a second portion underlying the first portion. The width of the second portion is greater than the width of the first portion. The second portion includes an active layer, a waveguide layer and a substrate. In order to increase process tolerances, the boundary of the second portion and the first portion may be arranged at the waveguide layer. In particular, fig. 4 is a schematic cross-sectional view of an electro-absorption modulator region of a ridge-type structure as provided in the present application. Fig. 4 is a schematic cross-sectional view of plane 207 of fig. 3. As shown in fig. 4, in the positive direction of the Y-axis, the electro-absorption modulator region includes a first N electrode layer 201, a substrate 202, a waveguide layer 203, a first lower respective optical confinement layer 204, a first quantum well layer 205, a first upper respective optical confinement layer 206, an upper capping layer 303, a first contact layer 304, and a first P electrode layer 209. The waveguide layer 203 includes a lower cladding layer 301 and a core layer 305.
Wherein the electro-absorption modulator region is a ridge-type structure. The electro-absorption modulator region includes a first portion of the upper layer and a second portion of the lower layer. A first N electrode layer 201, a substrate 202 belonging to a second part of the lower layer. The first lower respective optical confinement layer 204, the first quantum well layer 205, the first upper respective optical confinement layer 206, the upper capping layer 303, the first contact layer 304 and the first P electrode layer 209 belong to a first part of the upper layer. The line of intersection of the first portion and the second portion is a straight line 401. The straight line 401 divides the waveguide layer 203 into a first waveguide layer and a second waveguide layer. The first waveguide layer belongs to the first section and the second waveguide layer belongs to the second section. When the line 401 is located in the waveguide layer, there may be a large process tolerance during processing of the electro-absorption modulator region, since the waveguide layer may have a relatively thick thickness. And makes the fundamental transverse mode operation of the electro-absorption modulator region easier to achieve.
In order to flexibly control the light output power of the signal light. The electro-absorption modulator region may be a double ridge structure. Specifically, fig. 5 is a schematic cross-sectional view of an electro-absorption modulator region of a double-ridge structure as provided in the present application. As shown in fig. 5, on the basis of fig. 4, the second portion of the electro-absorption modulator region includes a third portion and a fourth portion underlying the third portion. The fourth portion has a width greater than a width of the third portion. The line of intersection of the fourth portion and the third portion is a straight line 501. Wherein the second waveguide layer belongs to the third section. The substrate 202 and the first N electrode layer 201 belong to a fourth part. The occupation ratio of the signal light in the first active layer and the waveguide layer is related to the ratio of the width of the second waveguide layer to the width of the first waveguide layer, i.e., the power ratio of the first laser light and the second laser light is related to the width of the second waveguide layer. Therefore, by adjusting the width of the second waveguide layer (i.e., the width of the third portion), the ratio of the width of the second waveguide layer to the width of the first waveguide layer can be changed, thereby changing the occupation ratio of the signal light in the first active layer and the waveguide layer. And the occupation ratio of the signal light in the first active layer and the waveguide layer is related to the light output power of the electro-absorption modulator region. Therefore, the light output power of the electro-absorption modulator region can be flexibly controlled by the width of the whole second waveguide layer.
To reduce the processing cost of the waveguide layer 203, the waveguide layer 203 may include an upper cladding layer, a core layer, and a lower cladding layer. Specifically, FIG. 6 is a schematic cross-sectional view of an electro-absorption modulator region of the present application that provides a ridge-type structure including an upper cladding layer. As shown in fig. 6, based on fig. 4, the waveguide layer 203 includes an upper cladding layer 601, a core layer 305, and a lower cladding layer 301. The upper cladding layer 601 is disposed between the first lower optical confinement layer 204 and the core layer 305. The processing cost of the core layer 305 is generally greater than the processing cost of the upper cladding layer 601 or the lower cladding layer 301 of the same thickness. Therefore, when the waveguide layer 203 includes a lower cladding or an upper cladding layer, the processing cost can be reduced by reducing the thickness of the core layer.
It should be understood that the electro-absorption modulator region in fig. 6 is a ridge-type structure when the waveguide layer includes an upper cladding layer. In practical applications, the electro-absorption modulator region may also be a double-ridge structure. Specifically, fig. 7 is a schematic cross-sectional view of an electro-absorption modulator region of a double-ridge structure including an upper cladding layer as provided herein. As shown in fig. 7, based on fig. 5, the waveguide layer 203 includes an upper cladding layer 601, a core layer 305, and a lower cladding layer 301. The upper cladding layer 601 is disposed between the first lower optical confinement layer 204 and the core layer 305.
At this time, the upper cladding 601, the core layer 305, and the lower cladding 301 form a waveguide, thereby reducing the thickness of the core layer 305. Wherein, the thickness of the upper cladding 601 may be 0.01 to 5 micrometers. The thickness of the waveguide layer 203 may be 0.03 microns to 6 microns. Further, since the waveguide layer absorbs a part of the introduced laser light, the power of the second signal light is reduced to some extent, and a loss occurs. The present application may define that the refractive index of the upper cladding 601 and/or the lower cladding 301 is smaller than the effective refractive index of the first active layer, reducing the loss of laser light in the waveguide layer.
When the electro-absorption modulator region is a double-ridge type structure, the width of the first portion is d1 micrometer, and the width of the third portion is d2 micrometer. To better ensure the process tolerance during the machining process, the difference between d2 and d1 can be defined to be larger than 4.
Increasing the length of the electro-absorption modulator region increases the magnitude of the parasitic capacitance, thereby reducing the modulation bandwidth of the electro-absorption modulator region. On the other hand, the equivalent circuit of the electro-absorption modulator area is no longer a lumped parameter circuit, and the electro-modulation signal has reflection at two end faces of the electro-absorption modulator area, so that the modulation bandwidth is reduced. In particular, fig. 8 is a schematic diagram of an electrical connection of an electro-absorption modulator region as provided in the present application. As shown in fig. 8, an electrical modulation signal is applied to the middle of the first P electrode layer 209. Thus, there is a reflection of the electrical modulation signal across the electro-absorption modulator region, thereby affecting the modulation bandwidth of the electro-absorption modulator region. Also, the longer the length of the electro-absorption modulator region, the greater the effect of reflection.
For this reason, the P electrode and the N electrode in the present application are traveling wave electrode structures. The electro-absorption modulator area with the traveling wave electrode structure is a traveling wave electrode modulator. Fig. 9 is another schematic electrical connection diagram of an electro-absorption modulator region provided in the present application. As shown in fig. 9. An electrical modulation signal is applied to the input of the first P electrode layer 209. The input end is plane 207 in fig. 2. The light transmission direction is shown by the arrow in fig. 9. The optical transmission direction is the same as the transmission direction of the electrical modulation signal. The output of the first P electrode layer 209 is connected to a matched load. The matched load is connected to the first N electrode layer 201. The first N electrode layer 201 is grounded. At this time, the parallel capacitance C of the electro-absorption modulator section is compensated by the matching load in series for each small length in the transmission direction of the electro-modulated signal, thereby forming a characteristic impedance. The characteristic impedance may prevent reflection of the electrical modulation signal by the output of the first P electrode layer 209, thereby reducing the effect of reflection on the modulation bandwidth.
In fig. 2, the first N electrode layer is on the opposite side of the electro-absorption modulator region. When the electro-absorption modulator region is of a ridge or double-ridge structure, the first N electrode layer may be on the front side of the electro-absorption modulator region if the boundary of the first portion and the second portion is below the waveguide layer. For example, the first N electrode layer is located on the boundary line 501 in fig. 5. Fig. 10 is a top view of an electroabsorption modulated laser as provided in the present application. As shown in fig. 10, an electro-absorption modulated laser includes an electro-absorption modulator region, an electrical isolation region, and a laser region. The electro-absorption modulator region includes a first P electrode layer 1002, a first N electrode layer 1001, and a first N electrode layer 1003. A first N electrode layer 1001 and a first N electrode layer 1003 are on the front side of the electro-absorption modulator region. The first P electrode layer 1002 is a signal electrode of the coplanar waveguide, and the first N electrode layer 1001 and the first N electrode layer 1003 on both sides are ground electrodes. Coplanar waveguides are also called coplanar microstrip transmission lines. The coplanar waveguide transmits transverse electromagnetic waves, so that the characteristic impedance of the coplanar waveguide can be flexibly designed to be matched with a load, the electric signal reflection of the load is reduced, and the modulation bandwidth is increased.
In other embodiments, the second N electrode layer of the laser region is located on the front side of the laser region. As shown in fig. 10, the laser region includes a second P electrode layer 1005, a second N electrode layer 1004, and a second N electrode layer 1006. In a side view, the second P electrode layer 1005 and the second N electrode layer 1004, or the second N electrode layer 1006 are in different planes. For example, in fig. 5, a second P electrode layer 1005 may be on the contact layer 304. The second N electrode layer 1004 and the second N electrode layer 1006 may be on the boundary line 501.
In other embodiments, the output direction of the signal light and the first direction have an angle of 4 to 15 degrees. Specifically, when the output direction of the signal light is perpendicular to the output end face (the left end face of the electro-absorption modulator region). The signal light may be end-reflected at the output facet. The end-facet reflections may affect the properties of the laser region, for example, causing a shift in the lasing wavelength of the laser region or causing a deterioration of the eye diagram of the electro-absorption modulator region. As shown in fig. 2, the first ridge waveguide and the second ridge waveguide are parallel to the Z-axis straight waveguide. In the present application, the first ridge waveguide may be a curved waveguide. At this time, the first ridge waveguide is bent toward the X-axis. A tangent of the curved first ridge waveguide on the output end face (the left end face of the electro-absorption modulator region) is the output direction of the signal light. The output direction and the positive direction of the Z axis (first direction) have an angle of 4 to 15 degrees.
In other embodiments, as shown in the figure, when the first active layer and the second active layer have misalignment in the Y-axis direction, the first active layer and the second active layer have a certain misalignment error range. Specifically, there is a common region in the projection of the first and second quantum well layers on the first plane. The first plane is perpendicular to the upper surface of the substrate, and a normal of the first plane is parallel to a propagation direction of the laser light in the laser region. For example, the first plane may be plane 207 or plane 208.
In other embodiments, the laser region has a length of 400 to 2000 microns. As can be seen from the foregoing description of the electro-absorption modulated laser in fig. 2, by introducing the waveguide layer, the electro-absorption modulator region can introduce part of the laser light into the waveguide layer, and the power of the laser light when the electro-absorption modulator region enters the saturation state is increased. Therefore, the present application can increase the output power of the laser region. The longer the length of the laser region, the greater the output power of the laser region in general. In practical applications, the length of the laser region is typically less than 400 microns. The present application defines the length of the laser region to be 400 microns to 2000 microns.
An electroabsorption modulated laser is described above. In the application, the electro-absorption modulator region can introduce part of laser into the waveguide layer, so that the saturated absorption light power of the electro-absorption modulator is improved. Therefore, the output power of the electroabsorption modulation laser can be improved.
The light emitting assembly provided in the present application is described below. Fig. 11 is a schematic structural diagram of a light emitting assembly provided in the present application. As shown in fig. 11, the optical transmit assembly 1101 includes an electro-absorption modulated laser 1103 and a photodetector 102. The signal light generated by the electro-absorption modulated laser 1103 includes a backlight and a forward light. The electroabsorption modulated laser 1103 is used to output forward light. The photodetector 1102 is configured to receive the back light and convert the back light into an electrical signal. The electrical signal can be used to compare with the electrical modulation signal to determine whether the electroabsorption modulated laser 1103 is operating properly. Specifically, when the electrical signal and the electrical modulation signal are the same, it indicates that the operating state of the electroabsorption modulated laser 1103 is normal; when the electrical signal and the electrical modulation signal are different, this indicates that the electroabsorption modulated laser 1103 is not operating properly.
The electroabsorption modulated laser 1103 may refer to the electroabsorption modulated laser of any one of the embodiments of fig. 2 to 4 and fig. 6 to 7. For example, as shown in FIG. 2, an electro-absorption modulated laser 1103 includes an electro-absorption modulator region and a laser region. A waveguide layer is included between the first active layer of the electro-absorption modulator region and the substrate. For example, as shown in FIG. 6, the electro-absorption modulator region of the electro-absorption modulated laser 1103 includes an upper cladding layer.
The light emitting assembly of the present application is described above. The following describes the optical terminal provided in the present application. Fig. 12 is a schematic structural diagram of an optical terminal provided in the present application. As shown in fig. 12, optical terminal 1201 includes a processor 1202 and an optical transmit assembly 1203. The optical terminal 1201 may specifically be the OLT or the optical terminal in fig. 1. It should be understood that in practical applications, the optical terminal 1201 may also be a switch, a data center, or the like.
The light emitting assembly 1203 may refer to the light emitting assembly 1201 of fig. 12 described previously. The electroabsorption modulated laser can refer to the electroabsorption modulated laser of any one of the embodiments of fig. 2 to 4 and fig. 6 to 7. The processor 1202 may be a Central Processing Unit (CPU), a Network Processor (NP), or a combination of a CPU and an NP. The processor 1202 may further include a hardware chip or other general purpose processor. The hardware chip may be an Application Specific Integrated Circuit (ASIC), a Programmable Logic Device (PLD), or a combination thereof.
The light emitting assembly 1203 includes an electro-absorption modulated laser, among other things. The processor 1202 is configured to provide an electrical modulation signal to the electroabsorption modulated laser. The electric absorption modulation laser is used for modulating the laser according to the electric modulation signal to obtain signal light. The signal light may specifically be forward light.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application.
Claims (16)
1. An electroabsorption modulated laser, comprising: a laser region, an electrical isolation region, and an electro-absorption modulator region on the same semiconductor substrate;
the electrically isolated region is disposed between the laser region and the electro-absorption modulator region;
the laser section is for generating laser light that is coupled into the electro-absorption modulator section in communication with the laser section;
the electro-absorption modulator area is used for modulating the laser to obtain signal light;
wherein the electro-absorption modulator region includes a first active layer and a waveguide layer disposed between the substrate and the first active layer.
2. The electroabsorption modulated laser of claim 1, wherein the electroabsorption modulator region has a length in a first direction that is a propagation direction of laser light in the laser region that is greater than 300 microns.
3. The electroabsorption modulated laser of claim 1 or 2, wherein the electroabsorption modulator region comprises a first P-electrode and a first N-electrode, the first P-electrode and the first N-electrode being a traveling S21P000544 electrode structure.
4. An electroabsorption modulated laser as claimed in any one of claims 1 to 3, wherein the waveguide layer comprises an upper cladding layer and a core layer, the upper cladding layer being disposed between the first active layer and the core layer.
5. The electroabsorption modulated laser of claim 4, wherein the waveguide layer further comprises a lower cladding layer disposed between the substrate and the core layer.
6. The electroabsorption modulated laser as claimed in claim 4 or 5, wherein the upper cladding layer has a thickness of between 0.01 and 5 microns.
7. An electroabsorption modulated laser as claimed in any one of claims 4 to 6, wherein the thickness of the waveguide layer is between 0.03 and 6 microns.
8. The electroabsorption modulated laser of any one of claims 1-7, wherein the electroabsorption modulator region is a ridge-type structure, the electroabsorption modulator region comprising a first portion and a second portion underlying the first portion, the second portion having a width greater than a width of the first portion;
the first active layer belongs to the first portion;
the substrate belongs to the second portion;
wherein the waveguide layers comprise a first waveguide layer and a second waveguide layer, the first waveguide layer belonging to the first section and the second waveguide layer belonging to the second section.
9. The electroabsorption modulated laser as claimed in claim 8, wherein the second portion is a ridge structure, the second portion includes a third portion and a fourth portion underlying the third portion, and a width of the fourth portion is greater than a width of the third portion;
wherein the second waveguide layer belongs to the third section and the substrate belongs to the fourth section.
10. The electroabsorption modulated laser of claim 9, wherein the difference between the width of the first portion and the width of the third portion is greater than 4 microns.
11. An electroabsorption modulated laser as claimed in any one of claims 1 to 10, wherein the first active layer comprises a first quantum well layer, the laser region comprises a second active layer comprising a second quantum well layer;
wherein projections of the first and second quantum well layers on a first plane, which is perpendicular to the upper surface of the substrate, have a common region, and a normal of the first plane is parallel to a propagation direction of laser light in the laser region.
12. An electroabsorption modulated laser as claimed in any one of claims 1 to 11, wherein the material of the waveguide layer is indium gallium arsenide phosphide InGaAsP or indium gallium aluminum arsenide InGaAlAs.
13. An electroabsorption modulated laser as claimed in any one of claims 1 to 12, wherein the waveguide layer extends to the interface of the electrically isolated region and the laser region.
14. An electroabsorption modulated laser as claimed in any one of claims 1 to 13 wherein the length of the laser region is from 400 microns to 2000 microns.
15. A light emitting assembly, comprising: a photodetector and an electroabsorption modulated laser as claimed in any one of the preceding claims 1 to 14;
wherein the signal light generated by the electroabsorption modulated laser comprises back light and forward light;
the electroabsorption modulation laser is used for outputting the forward light;
the light detector is used for receiving the back light and converting the back light into an electric signal.
16. An optical terminal, comprising: a processor and a light emitting assembly;
the optical transmission assembly comprising an electroabsorption modulated laser as claimed in any one of claims 1 to 14;
the processor is used for providing an electric modulation signal for the electric absorption modulation laser;
the electric absorption modulation laser is used for modulating laser according to the electric modulation signal to obtain signal light.
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| CN202110426648.5A CN115224584A (en) | 2021-04-20 | 2021-04-20 | Electro-absorption modulated laser, light emitting module and optical terminal |
| PCT/CN2022/087645 WO2022222919A1 (en) | 2021-04-20 | 2022-04-19 | Electro-absorption modulation laser, optical transmission assembly, and optical terminal |
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| CN202110426648.5A CN115224584A (en) | 2021-04-20 | 2021-04-20 | Electro-absorption modulated laser, light emitting module and optical terminal |
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| JP4833457B2 (en) * | 2001-08-29 | 2011-12-07 | 古河電気工業株式会社 | Fabrication method of optical integrated device |
| JP2005129824A (en) * | 2003-10-27 | 2005-05-19 | Opnext Japan Inc | Semiconductor laser device |
| CN1630149A (en) * | 2003-12-16 | 2005-06-22 | 中国科学院半导体研究所 | Method for making electric absorption modulation DFB semiconductor laser |
| WO2005081050A1 (en) * | 2004-02-20 | 2005-09-01 | Nec Corporation | Modulator-integrated light source and its manufacturing method |
| WO2005106546A2 (en) * | 2004-04-15 | 2005-11-10 | Infinera Corporation | COOLERLESS AND FLOATING WAVELENGTH GRID PHOTONIC INTEGRATED CIRCUITS (PICs) FOR WDM TRANSMISSION NETWORKS |
| GB2454452B (en) * | 2007-09-10 | 2011-09-28 | Ct For Integrated Photonics Ltd | Optoelectronic components |
| CN101471541A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院半导体研究所 | Method for making laminated travelling wave electroabsorption modulation laser with epitaxial selection region |
| JP5467953B2 (en) * | 2010-07-07 | 2014-04-09 | 日本オクラロ株式会社 | Semiconductor optical device, optical transmission module, optical transmission / reception module, and optical transmission device |
| CN207149876U (en) * | 2017-06-12 | 2018-03-27 | 陕西源杰半导体技术有限公司 | A kind of double quantum well Electroabsorption Modulated Laser |
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