CN115210199A - 接合体、保持装置以及静电卡盘 - Google Patents
接合体、保持装置以及静电卡盘 Download PDFInfo
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- CN115210199A CN115210199A CN202180018306.8A CN202180018306A CN115210199A CN 115210199 A CN115210199 A CN 115210199A CN 202180018306 A CN202180018306 A CN 202180018306A CN 115210199 A CN115210199 A CN 115210199A
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- bonding
- metal layer
- metal
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- wire
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Abstract
在接合体中,接合层具备:接合材料,其以熔点时的表面张力为1000mN/m以下的金属为主要成分;以及金属层,在该金属层形成有多个孔,接合材料进入到孔的至少一部分。
Description
技术领域
本发明涉及接合体、保持装置以及静电卡盘。
背景技术
以往,公知一种利用包含接合材料的接合层将两个构件接合而成的接合体。通常,当使用包含表面张力较小的金属的接合材料来接合两个构件时,能够使接合材料遍及接合层与两个构件的接合界面的较大的范围。例如,在专利文献1、2中公开了使用以表面张力较小的铟为主要成分的接合材料来接合两个构件的技术。另外,在专利文献3中公开了具备接合层的接合体,该接合层包含导热率比接合材料高的纤维。另外,在专利文献4中公开了具备接合层的保持装置,该接合层具有导热率较高的网格构件。
现有技术文献
专利文献
专利文献1:日本特许3485390号公报
专利文献2:日本特开平3-3249号公报
专利文献3:日本特开2020-47747号公报
专利文献4:日本特开平7-263527号公报
发明内容
发明要解决的问题
然而,根据上述那样的现有技术,关于在接合体中抑制因抑制接合材料从两个构件之间流出而导致的接合强度的下降的技术,还存在改善的余地。例如,在专利文献1、2所记载的技术中,由于包含铟的接合材料的流动性较高,因此存在接合材料从两个构件之间流出的情况。因此,两个构件的接合强度有可能下降。在专利文献3所记载的技术中,在接合层中,接合材料的流动被纤维遮挡,从而有时在接合层与两个构件的接合界面产生空隙。若产生空隙,则两个构件的基于接合层接合的接合强度有可能下降。在专利文献4所记载的技术中,接合材料的流动被网格构件遮挡,从而在接合层与两个构件的接合界面产生空隙,两个构件的基于接合层接合的接合强度有可能下降。
本发明的目的在于提供一种在利用接合材料将第1构件与第2构件接合而成的接合体中,抑制因接合材料从两个构件之间流出而导致的接合强度的下降的技术。
用于解决问题的方案
本发明是为了解决上述课题的至少一部分而完成的,能够以以下的方式来实现。
(1)根据本发明的一个方式,提供一种由第1构件和第2构件经由接合层接合而成的接合体。在该接合体中,所述接合层具备:接合材料,其以熔点时的表面张力为1000mN/m以下的金属为主要成分;以及金属层,在该金属层形成有多个孔,所述接合材料进入到所述孔的至少一部分。
根据该结构,以熔点时的表面张力为1000mN/m以下的金属为主要成分的接合材料进入到金属层的孔的至少一部分。接合材料的主要成分是指接合材料所含的成分中的、相对于接合材料的总重量为50%以上的重量比例的成分。以熔点时的表面张力为1000mN/m以下的金属为主要成分的接合材料若熔化则流动性较高。在接合层中,接合材料在第1构件与接合层的接合界面及第2构件与接合层的接合界面的整个区域扩展并且进入到金属层的孔中,从而接合材料难以从第1构件与第2构件之间流出。由此,抑制接合材料从第1构件与第2构件之间流出,因此能够抑制第1构件与第2构件的接合强度的下降。
(2)在上述方式的接合体中,也可以是,所述金属层由以钼或钨为主要成分的材料形成。根据该结构,由以钼或钨为主要成分的材料形成的金属层的热膨胀较小,因此,即使在将第1构件与第2构件接合时或使用接合体时被加热,金属层的变形的程度也较小。由此,能够稳定地抑制接合材料的流出,因此能够进一步抑制第1构件与第2构件的接合强度的下降。
(3)在上述方式的接合体中,也可以是,所述金属层由以铝或钛为主要成分的材料形成。根据该结构,由以铝或钛为主要成分的材料形成的金属层的杨氏模量较小,因此容易变形。由此,在接合体被冷却时,金属层也追随接合材料的收缩而变形,因此能够抑制空隙的产生。因此,能够抑制因空隙的产生而导致的第1构件与第2构件的接合强度的下降。
(4)在上述方式的接合体中,也可以是,所述金属层是网格构件,所述网格构件的线材的表面由以金、银、铜中的任一者为主要成分的材料形成。根据该结构,形成网格构件即金属层的线材的表面由以金、银、铜中的任一者为主要成分的材料形成。由此,接合材料对金属层的润湿性提高,因此接合材料容易在第1构件及第2构件与接合层的接合界面的整个区域扩展,抑制空隙的产生。因此,能够抑制第1构件与第2构件的接合强度的下降。
(5)在上述方式的接合体中,也可以是,所述金属层是多个线材以呈平纹组织状、斜纹组织状或斜纹荷兰编织组织状中的任一形状交叉的方式形成的网格构件,在所述线材中,与相邻的其他线材交叉的部分未与所述其他线材连接。根据该结构,与相邻的其他线材交叉的部分未与其他线材连接的网格构件例如通过冲孔金属、多个线材交叉而形成,但相较于与相邻的其他线材交叉的部分与其他线材连接的焊接网,线材容易移动。由此,在冷却接合体时,金属层也容易追随接合材料的收缩而变形,因此能够抑制空隙的产生。因此,能够进一步抑制因空隙的产生而导致的第1构件与第2构件的接合强度的下降。
(6)在上述方式的接合体中,也可以是,所述金属层为网格构件,网格间隔为70μm~1500μm。根据该结构,网格构件即金属层的网格间隔为70μm~1500μm。若网格间隔小于70μm,则进入到金属层的孔中的接合材料难以在金属层的内部移动,因此接合材料难以在接合界面的整个区域扩展。另外,若网格间隔大于1500μm,则容易在接合层产生空隙,第1构件与第2构件的接合强度下降。在具备网格间隔为70μm~1500μm的金属层的接合体中,能够使接合材料在第1构件及第2构件与接合层的接合界面的整个区域扩展,并且能够抑制因空隙的产生而导致的接合强度的下降。由此,能够进一步提高第1构件与第2构件的接合强度。
(7)在上述方式的接合体中,也可以是,所述金属层为网格构件,所述网格构件的线材的线径为50μm~400μm。根据该结构,网格构件即金属层的线材的线径为50μm~400μm。若线径小于50μm,则由金属层产生的防止接合材料流出的效果变小,接合材料容易从金属层的孔漏出。另外,若线径大于400μm,则由金属层产生的防止接合材料流出的效果过大,因此接合材料难以在接合界面的整个区域扩展。在接合层具备线径为50μm~400μm的金属层的接合层中,能够使接合材料在接合界面的整个区域适度地扩展。由此,能够抑制接合材料从第1构件与第2构件之间流出,并且抑制空隙的产生,因此能够进一步提高第1构件与第2构件的接合强度。
(8)在上述方式的接合体中,也可以是,所述接合材料以铟为主要成分。根据该结构,通过将以铟为主要成分的接合材料用于接合层,能够在比较低的温度下将第1构件与第2构件接合。由于能够在比较低的温度下将第1构件与第2构件接合,因此能够得到适合在低温下使用的接合体。
(9)根据本发明的另一方式,提供一种保持装置。该保持装置具备上述的接合体,所述第2构件具备载置保持对象物的载置面。根据该结构,在接合体中,通过金属层抑制接合材料从第1构件与第2构件之间流出,因此能够提高第1构件与第2构件的接合强度。由此,在接合体形成有供电极端子配置的贯通孔的情况下,能够抑制因接合材料向贯通孔漏出而导致的电极端子的绝缘不良的发生。另外,在供升降销等移动体配置的贯通孔形成于接合体的情况下,能够抑制因接合材料向贯通孔漏出而导致的移动体的动作不良的发生。另外,在接合体形成有用于向载置面供给流体的贯通孔的情况下,能够抑制因接合材料向贯通孔漏出而导致的贯通孔的堵塞。这样,能够抑制在保持装置中发生绝缘不良、动作不良、抑制贯通孔的堵塞等,因此能够抑制保持装置的功能丧失。
(10)根据本发明的又一方式,也可以是,提供一种静电卡盘。该静电卡盘具备上述的保持装置,所述第1构件在内部具有静电吸附电极。根据该结构,在接合体形成有供与静电吸附电极电连接的电极端子配置的电极用的贯通孔、供用于抬起静电吸附于静电吸附电极的晶圆的升降销***的升降销用的贯通孔。在上述的保持装置所具备的接合体中,通过金属层抑制接合材料从第1构件与第2构件之间流出,因此能够抑制电极端子在电极用的贯通孔处的绝缘不良、升降销在升降销用的贯通孔处的动作不良的发生。另外,能够抑制因接合材料向用于向载置面供给流体的贯通孔漏出而导致的贯通孔的堵塞。因此,能够抑制静电卡盘的功能丧失。
此外,本发明能够以多种方式实现,例如,能够以包含接合体的装置、接合体以及保持装置的制造方法等方式实现。
附图说明
图1是表示第1实施方式的静电卡盘的外观的立体图。
图2是静电卡盘的整体剖视图。
图3是静电卡盘的局部剖视图。
图4是说明接合材料的流出的评价方法的第1图。
图5是说明接合材料的流出的评价方法的第2图。
图6是说明接合体的接合强度的评价方法的第1图。
图7是说明接合体的接合强度的评价方法的第2图。
图8是说明接合体的评价试验的结果的第1图。
图9是说明接合体的评价试验的结果的第2图。
具体实施方式
第1实施方式
图1是表示第1实施方式的静电卡盘1的外观的立体图。图2是静电卡盘1的整体剖视图。图3是静电卡盘1的局部剖视图。第1实施方式的静电卡盘1例如是设于蚀刻装置并且利用静电引力来吸附晶圆W从而保持该晶圆W的保持装置。静电卡盘1具备陶瓷构件10、电极端子15、升降销18、金属构件20以及接合层30(参照图3)。在静电卡盘1中,在z轴方向(上下方向)上依次层叠有陶瓷构件10、接合层30以及金属构件20。在静电卡盘1中,由陶瓷构件10、接合层30以及金属构件20构成的接合体1a成为大致圆形形状的柱状体。在接合体1a中,经由接合层30将陶瓷构件10与金属构件20接合。陶瓷构件10相当于技术方案中的“第1构件”。金属构件20相当于技术方案中的“第2构件”。晶圆W相当于技术方案中的“保持对象物”。
陶瓷构件10是大致圆形形状的板状构件,由氧化铝(Al2O3)形成。陶瓷构件10的直径例如为50mm~500mm左右(通常为200mm~350mm左右),陶瓷构件10的厚度例如为1mm~10mm左右。陶瓷构件10具有一对主面11、12。在一对主面11、12中的一个主面11形成有供晶圆W载置的载置面13。载置于载置面13的晶圆W通过配置于陶瓷构件10的内部的静电吸附电极100(参照图2和图3)所产生的静电引力而吸附固定于载置面13。在另一个主面12形成有凹部14。在凹部14配置有将来自未图示的电源的电力向静电吸附电极100供给的电极端子15的端部15a。此外,形成陶瓷构件10的陶瓷也可以是氮化铝(AlN)、氧化锆(ZrO2)、氮化硅(Si3N4)、碳化硅(SiC)、氧化钇(Y2O3)等。
在陶瓷构件10形成有两个贯通孔16、17。贯通孔16沿z轴方向贯通陶瓷构件10,供升降销18***。在晶圆W载置于载置面13时,贯通孔17成为供向载置面13与晶圆W之间供给的氦气流动的气体流路(参照图3的虚线箭头F1)。
金属构件20是由不锈钢形成的大致圆形平面状的板状构件,具有一对主面21、22。金属构件20的直径例如为220mm~550mm左右(通常为220mm~350mm),金属构件20的厚度例如为20mm~40mm左右。在金属构件20的内部形成有制冷剂流路200(参照图2)。当例如氟类非活性液体、水等制冷剂在制冷剂流路200中流动时,经由接合层30将陶瓷构件10冷却,将载置于陶瓷构件10的晶圆W冷却。此外,形成金属构件20的金属的种类也可以是铜(Cu)、铝(Al)、铝合金、钛(Ti)、钛合金等。
在金属构件20形成有3个贯通孔23、24、25。如图3所示,3个贯通孔23、24、25分别沿z轴方向贯通陶瓷构件10。电极端子15在贯通孔23中贯穿。升降销18***贯通孔24。在晶圆W载置于载置面13时,贯通孔25成为供向载置面13与晶圆W之间供给的氦气流动的流路。
接合层30配置于陶瓷构件10与金属构件20之间,将陶瓷构件10与金属构件20接合。接合层30具备金属层31和接合材料32。
金属层31配置于陶瓷构件10的另一个主面11与金属构件20的一个主面21之间。金属层31是大致圆形平面状的网格构件,使用由镍(Ni)构成的多个线材以形成网眼的方式编织而成。由此,在金属层31形成多个孔。在网格构件的线材的表面实施镀银(Ag)。金属层31的网格间隔为70μm~1500μm,线径为50μm~400μm。在本实施方式中,网格构件以多个线材呈平纹组织状交叉的方式形成,成为与相邻的其他线材交叉的部分不与其他线材连接的编织网构造。即,多个线材分别能够变更相对于相邻的线材的相对位置。另外,金属层31并不限定于网格构件,也可以是冲孔金属那样的多孔材料、焊接网那样的网眼构造材料。形成金属层31的材料并不限定于镍,也可以由钼(Mo)、钨(W)、钛(Ti)、铝(Al)、铜(Cu)、黄铜、它们的合金或不锈钢等形成。对网格构件的线材的表面实施的镀敷不限定于镀银,也可以实施镀金(Au)或镀铜。另外,使形成网格构件的多个线材交叉的方式并不限定于平纹组织状,也可以是斜纹组织状、斜纹荷兰编织组织状。
在金属层31形成有3个贯通孔31a、31b、31c。贯通孔31a将陶瓷构件10的凹部14与金属构件20的贯通孔23连通。贯通孔31b将陶瓷构件10的贯通孔16与金属构件20的贯通孔24连通。贯通孔31c将陶瓷构件10的贯通孔17与金属构件20的贯通孔25连通。即,在金属构件20和金属层31分别形成有相互连通的贯通孔23、25、31a、31c,在陶瓷构件10形成有与分别形成于金属构件20和金属层31的贯通孔25、31c连通的贯通孔17。
接合材料32是以熔点时的表面张力为1000mN/m以下的铟(In)为主要成分的接合材料。在此,接合材料的主要成分是指接合材料所含的成分中的、相对于接合材料的总重量为50%以上的重量比例的成分。接合材料的主要成分通过使用扫描型电子显微镜(SEM)的能量分散型X射线光谱仪(EDS)来确定。在本实施方式中,铟相对于接合材料32的总重量的重量比例为100%。接合材料32在接合层30中分别位于金属层31的靠陶瓷构件10侧和金属构件20侧的位置,进入到金属层31所具有的多个孔的至少一部分。此外,接合材料32的主要成分也可以是锌(Zn)、铅(Pb)、锡(Sn)等熔点时的表面张力为1000mN/m以下的金属。熔点时的表面张力通过sessile-drop法对使用上述EDS确定的金属来测量。
接着,对静电卡盘1的制造方法进行说明。首先,在陶瓷构件10的另一个主面12和金属构件20的一个主面21分别配置成为接合材料32的铟箔。接着,在分别配置于陶瓷构件10和金属构件20的铟箔之间配置金属层31,利用陶瓷构件10和金属构件20夹入金属层31。最后,通过对铟箔进行加热来使铟箔熔融,将陶瓷构件10与金属构件20接合。此时,熔融的铟箔的一部分进入到金属层31的孔中。由此,接合体1a完成。通过将电极端子15、升降销18组装到已完成的接合体1a,静电卡盘1完成。
另外,在静电卡盘1的另一制造方法中,在金属层31的一对主面分别配置成为接合材料32的铟箔。通过对配置有铟箔的金属层31进行加热来使铟箔熔融,在金属层31的一对主面分别配置接合材料32。由此,形成了接合材料32的一部分进入到孔中的金属层31。将孔中进入有该接合材料32的金属层31配置于陶瓷构件10与金属构件20之间,一边加热一边压制,由此将陶瓷构件10与金属构件20接合。由此,完成接合体1a。通过将电极端子15、升降销18组装到已完成的接合体1a,静电卡盘1完成。另外,静电卡盘1的制造方法并不限定于此。
接着,对评价经由接合层接合两个构件而成的接合体的评价试验进行说明。在本实施方式中,制作接合层所具备的金属层与接合材料的组合不同的接合体的样本,对于各个样本,评价接合材料的流出和接合强度。
图4是说明接合材料的流出的评价方法的第1图。图5是说明接合材料的流出的评价方法的第2图。首先,对接合材料的流出的评价试验中的评价项目进行说明。图4和图5是说明接合体的样本中的接合材料有无流出的评价方法的图。图4和图5所示的样本Sm具备两张氧化铝板10a、20a以及接合层30a。如图4和图5所示,在两张氧化铝板10a、20a中的氧化铝板10a形成有贯通孔16a。图4表示两张氧化铝板10a、20a通过接合层30a接合前的状态,图5表示两张氧化铝板10a、20a通过接合层30a接合后的状态。
在接合材料的流出的评价试验中,如图4所示,在两张氧化铝板10a、20a之间配置包含接合材料的接合层30a。此时,在接合层30a形成有孔35a,该孔35a具有比贯通孔16a的内径d15大的内径(参照图4)。由此,如图4所示,接合层30a的内壁面36a隐藏于氧化铝板10a,因此,成为无法经由贯通孔16a确认接合层30a的状态。接着,对样本Sm进行加热,使接合层30a的接合材料熔融,由此将两张氧化铝板10a、20a接合。将氧化铝板10a、20a接合时的接合层30a的孔35a的内径设为内径d35(参照图5)。此外,在本评价试验中,即使在接合了两张氧化铝板10a、20a时,在接合层30a的内壁面36a隐藏于氧化铝板10a而看不到的情况下,孔35a的内径d35设为与氧化铝板10a的贯通孔16a的内径d15相同的大小。
在接合材料的流出的评价试验中,使用将两张氧化铝板10a、20a接合时的内径d15与内径d35的大小关系,对接合层30a的接合材料的流出进行评价。具体而言,如下用符号表示。
d15=d35:〇
0<d15-d35<1mm:△
d15-d35≥1mm:×
上述的“d15=d35”的关系意味着经由氧化铝板10a的贯通孔16a看不到接合层30a,表示接合材料没有从两张氧化铝板10a、20a之间流出。上述的“0<d15-d35<1mm”的关系意味着接合层30a的孔35a的内径d35比氧化铝板10a的贯通孔16a的内径d15稍小(小于1mm),表示接合层30a的接合材料从两张氧化铝板10a、20a之间以可允许的范围少量流出。如图5所示,上述的“d15-d35≥1mm”的关系意味着接合层30a的孔35a的内径d35比氧化铝板10a的贯通孔16a的内径d15小1mm以上,表示接合材料从两张氧化铝板10a、20a之间较多地流出。
图6是说明接合体的接合强度的评价方法的第1图。图7是说明接合体的接合强度的评价方法的第2图。图6和图7所示的样本Sm具备两片银制的板状构件10b、20b以及接合层30b。接合层30b以将两张板状构件10b、20b各自的一个端部11b、21b接合的方式配置(参照图6)。在本评价试验中,在一个端部11b、21b通过接合层30b接合的样本Sm中,如图7所示,将两张板状构件10b、20b各自的另一个端部12b、22b向彼此相反的方向拉伸。在图7所示的状态下,逐渐增大拉伸两张板状构件10b、20b各自的另一个端部12b、22b的力(图7所示的空心箭头P1、P2),根据样本Sm破损时的力来测量样本Sm的断裂强度。在本评价试验中,将该测量出的断裂强度视为接合强度。具体而言,接合强度如下用符号表示。在此,“界面”是指板状构件10b、20b与接合层30b的接合界面。
断裂强度1.5kgf以上(接合层破坏):〇
断裂强度为1kgf以上且小于1.5kgf(部分界面剥离):△+或△-
△+:剥离部分的面积相对于界面的总面积的比率小于50%
△-:剥离部分的面积相对于界面的总面积的比率为50%以上
断裂强度小于1kgf(界面剥离):×
在本评价试验中,作为形成有多个孔的金属层,使用冲孔金属、焊接网以及编织网,评价了接合材料的流出和接合强度。本评价试验中的冲孔金属是指在金属制的构件中开有多个小孔的金属。本评价试验中的焊接网是指编织金属制的线材且将线材重叠的部位通过焊接连接而成的网。本评价试验中的编织网是指仅编织线材而线材重叠的部位不连接的网。
图8是说明接合体的评价试验的结果的第1图。在图8中,针对金属层的有无、金属层的构造的差异、形成金属层的线材的材料的差异、线材的镀敷的有无以及编织网的编织方法的差异各自的影响,示出了对接合材料的流出和接合强度进行评价的结果。
关于接合层中有无金属层所带来的影响,使用接合层中不具备金属层的样本1和接合层中具备冲孔金属的样本2进行说明。如图8所示,在样本1中,确认了接合材料的流出(×)和接合界面的整个面剥离(×)。另一方面,与样本1相比,在样本2中,确认了接合材料的流出被抑制(△),接合界面的剥离停留在一部分(△-)。由此,确认了通过在接合层中包含多孔质的金属层,从而接合材料的流出被抑制,接合强度提高。
使用在接合层中具备冲孔金属的样本2、在接合层中具备焊接网的样本3以及在接合层中具备编织网的样本12,对由金属层的构造的差异带来的影响进行说明。样本2、3、12各自的材料(SUS)相同,样本3、12各自的网格间隔(500μm)和线材的线径(200μm)相同。如图8所示,在样本2和样本3中,接合界面中的50%以上剥离(△-),而在样本12中,接合界面中只有小于50%剥离(△+)。由此,关于接合强度,确认了在本次的评价试验中使用的3种金属层中,编织网最好。认为其原因在于,与冲孔金属、焊接网相比,在与相邻的其他线材交叉的部分未与其他线材连接的编织网中,其线材容易移动,因此追随接合材料的收缩而变形,抑制空隙的产生。
关于形成金属层的线材的材料的差异所带来的影响,使用形成焊接网的线材的材料分别为SUS、铝、钛、钼、钨、银的样本3~8进行说明。样本3~8各自的网格间隔(500μm)和线材的线径(200μm)相同。如图8所示,确认了样本4和样本5的接合强度比样本3的接合强度有所提高(△-→〇)。认为其原因在于,由杨氏模量较小的铝或钛形成的焊接网容易变形,因此容易追随接合材料的收缩,抑制空隙的产生。另外,确认了样本6和样本7中的接合材料的流出与样本3中的接合材料的流出相比被抑制(△→〇)。认为其原因在于,在由热膨胀较小的钼或钨形成的焊接网中,由温度引起的金属层的变形的程度较小。并且,确认了在具备由银形成的焊接网的样本8中,接合强度也比样本3的接合强度有所提高(△-→〇)。
关于线材有无镀敷所带来的影响,使用未对形成焊接网的线材实施镀敷的样本3和对形成焊接网的线材的表面分别实施了镀银、镀金、镀铜的样本9~11进行说明。样本3、9~11各自的网格间隔(500μm)、线材的线径(200μm)以及线材(SUS)相同。如图8所示,确认了样本9~11的接合强度比样本3的接合强度有所提高(△-→〇)。认为其原因在于,通过在线材的表面分别镀银、镀金、镀铜,接合材料的润湿性提高。由此,接合材料容易在板状构件10b、20b与接合层30b的接合界面的整个区域扩展,能够抑制空隙的产生。
关于编织网的编织方法的差异所带来的影响,使用编织网分别以平纹组织、斜纹组织、斜纹荷兰编织组织编织而成的样本12、13、14进行说明。如图8所示,在各个样本12~14中,对接合强度的大小未确认到明显的差异。
图9是说明接合体的评价试验的结果的第2图。在图9中,针对形成编织网的线材的镀敷的有无及镀敷的材料的差异、网格间隔的差异、线材的线径的差异、线材的材料的差异、以及钎料的材料的差异各自的影响,示出了对接合材料的流出和接合强度进行评价的结果。
使用具备未对线材的表面实施镀敷的编织网的样本15和具备对线材的表面分别实施了镀银、镀金、镀铜的编织网的样本16~18,对由线材的镀敷的有无和镀敷的材料的差异带来的影响进行说明。样本15~18各自的编织网的网格间隔(500μm)、线材的线径(200μm)以及线材(钼)相同。如图9所示,在样本15~18中,均未确认到接合材料的流出(〇)。另一方面,关于接合强度,确认了样本16~18与样本15相比接合强度较大,在接合界面剥离之前,接合层被破坏(〇)。认为其原因在于,在各个样本16~18中,如上所述,通过在线材的表面分别镀银、镀金、镀铜,从而接合材料的润湿性提高。由此,在样本16~18中,与样本15相比,接合材料容易在板状构件10b、20b与接合层30b的接合界面的整个区域扩展,能够抑制空隙的产生。因此,确认了通过在编织网的线材的表面实施镀银、镀金、镀铜中的任一种,板状构件10b、20b与接合层30b的接合强度进一步提高。
使用网格间隔不同的样本16、19~24对由网格间隔的差异带来的影响进行说明。在样本19~24中,以网格间隔为500μm的样本16(线径200μm)为基准,在固定线材的线径的状态下,使网格间隔从50μm变化至1700μm。如图9所示,在网格间隔为70μm、100μm、1000μm、1500μm的样本20~23的各个样本中,未确认到接合材料的流出(〇),确认了在接合界面剥离之前,接合层30b被破坏(〇)。另一方面,在网格间隔为50μm的样本19和网格间隔为1700μm的样本24中,接合界面的一部分剥离(△+),由此确认了接合强度与样本20~23相比有所下降。如样本19那样,若网格间隔为50μm,则进入到金属层的孔中的接合材料难以在金属层的内部移动,因此,接合材料难以在接合界面的整个区域扩展。另外,如样本24那样,若网格间隔为1700μm,则容易在接合层产生空隙,接合强度下降。通过比较样本16、19~24,确认了通过将编织网的网格间隔设为70μm~1500μm,板状构件10b、20b与接合层30b的接合强度提高。
关于线材的线径所带来的影响,使用线径不同的样本16、25~29进行说明。在样本25~29中,以线径为200μm的样本16(网格间隔500μm)为基准,在固定网格间隔的状态下,使线径从30μm变化至450μm。如图9所示,在线径为50μm、150μm、400μm的样本26~28中,未确认到接合材料的流出(〇),确认了在接合界面剥离之前,接合层30b破坏(〇)。另一方面,在线径为30μm的样本25和线径为450μm的样本29中,确认了接合界面的一部分剥离(△)。如样本25那样,若线径为30μm,则由金属层产生的防止接合材料流出的效果变小,接合材料容易从金属层的孔漏出。另外,如样本29那样,若线径为450μm,则由金属层产生的防止接合材料流出的效果过大,因此,接合材料难以在接合界面的整个区域扩展。通过比较样本16、25~29,确认了通过将线径设为50μm~400μm,板状构件10b、20b与接合层30b的接合强度提高。
关于由形成编织网的线材的材料的差异带来的影响,使用编织网的线材由钼形成的样本16和编织网的线材由银钨形成的样本30进行说明。样本16、30各自的网格间隔(500μm)、线材的线径(200μm)以及镀敷的材料(银)相同。如图9所示,在样本16和样本30中,在接合材料的流出和接合强度中,均未确认到由线材的材料引起的明显的差异。
使用具备与样本16的铟不同的接合材料的样本31和样本32,对由钎料的材料的差异带来的影响进行说明。在样本31中,板状构件10b、20b通过由锡(Sn)、银(Ag)、铜(Cu)的组成比为1:3:0.5的SnAgCu构成的接合材料接合。在样本32中,板状构件10b、20b通过由铅(Pb)和锡的组成比为1:5的PbSn构成的接合材料接合。在样本31和样本32中,在编织网的线材的表面实施镀银。样本18和样本19均未确认到接合材料的流出(〇),确认了在接合界面剥离之前,接合层30b破坏(〇)。
根据以上说明的本实施方式的接合体1a,以熔点时的表面张力为1000mN/m以下的铟为主要成分的接合材料32进入到金属层31的孔的至少一部分。以铟为主要成分的接合材料32若熔化则流动性较高。在接合层30中,接合材料32在陶瓷构件10与接合层30的接合界面及金属构件20与接合层30的接合界面的整个区域扩展并且进入到金属层31的孔中,从而接合材料32难以从陶瓷构件10与金属构件20之间流出。由此,抑制接合材料32从陶瓷构件10与金属构件20之间流出,因此能够抑制陶瓷构件10与金属构件20的接合强度的下降。
另外,根据本实施方式的接合体1a,如图8及图9所示,若由以钼或钨为主要成分的材料形成金属层31,则金属层31的热膨胀变得比较小。由此,即使在将陶瓷构件10与金属构件20接合时、使用静电卡盘1时接合体1a被加热,金属层的变形的程度也变小。因此,能够稳定地抑制接合材料32的流出,因此能够进一步抑制陶瓷构件10与金属构件20的接合强度的下降。
另外,根据本实施方式的接合体1a,如图8所示,若由以铝或钛为主要成分的材料形成金属层31,则杨氏模量较小,因此容易变形。由此,在冷却静电卡盘1时,金属层31也追随接合材料32的收缩而变形,因此能够抑制空隙的产生。因此,能够进一步抑制由空隙的产生导致的陶瓷构件10与金属构件20的接合强度的下降。
另外,根据本实施方式的接合体1a,对镍制的网格构件即金属层31的线材的表面实施镀银。即,网格构件的线材的表面由以银为主要成分的材料形成。由此,接合材料32对金属层31的润湿性提高,因此,接合材料32容易在陶瓷构件10与接合层30的接合界面及金属构件20与接合层30的接合界面的整个区域扩展,进一步抑制空隙的产生。因此,能够进一步提高陶瓷构件10与金属构件20的接合强度。
另外,根据本实施方式的接合体1a,金属层31为大致圆形平面状的网格构件,形成网格构件的多个线材以呈平纹组织状交叉的方式形成。金属层31为与相邻的其他线材交叉的部分未与其他线材连接的编织网构造。由此,与冲孔金属、与相邻的其他线材交叉的部分与其他线材连接的焊接网相比,线材容易移动,因此,例如在冷却静电卡盘1时,金属层31也容易追随接合材料32的收缩而变形。因此,能够抑制空隙的产生,因此能够进一步抑制陶瓷构件10与金属构件20的接合强度的下降。
另外,根据本实施方式的接合体1a,镍制的网格构件即金属层31的网格间隔为70μm~1500μm。若网格间隔小于70μm,则进入到多孔质体的孔中的接合材料难以在金属层的内部移动,因此接合材料难以在接合界面的整个区域扩展。另外,若网格间隔大于1500μm,则容易在接合层产生空隙,接合强度下降。在接合层30具备网格间隔为70μm~1500μm的金属层31的接合体1a中,能够使接合材料32在陶瓷构件10与接合层30的接合界面及金属构件20与接合层30的接合界面的整个区域扩展,并且能够抑制由空隙的产生导致的接合强度的下降。由此,能够进一步提高陶瓷构件10与金属构件20的接合强度。
另外,根据本实施方式的接合体1a,镍制的网格构件即金属层31的线材的线径为50μm~400μm。若线径小于50μm,则由金属层产生的防止接合材料流出的效果变小,接合材料容易从金属层的孔漏出。另外,若线径大于400μm,则由金属层产生的防止接合材料流出的效果过大,因此接合材料难以在接合界面的整个区域扩展。在接合层30具备线材的线径为50μm~400μm的金属层31的接合体1a中,能够使接合材料32在接合界面的整个区域适度地扩展。由此,能够抑制接合材料32从陶瓷构件10与金属构件20之间流出,并且抑制空隙的产生,因此,能够进一步提高陶瓷构件10与金属构件20的接合强度。
另外,一般而言,若接合层的厚度变厚,则为了确保两个构件的接合强度而所需的接合材料的量变多,因此,在使用铟那样的昂贵的金属的情况下,接合体的制造成本增大。在本实施方式的接合体1a中,通过将金属层31的线材的线径设为400μm以下,能够使接合层30的厚度较薄,因此能够减少接合材料32的使用量。由此,能够减少接合体1a的制造成本。
另外,若接合层的厚度变厚,则两个构件间的距离变长,因此接合层的导热性下降。例如,在如本实施方式的保持装置那样从一个构件向另一个构件传递热时,有可能无法经由接合层高效地传热。在本实施方式的接合体1a中,通过将金属层31的线材的线径设为400μm以下,能够使接合层30的厚度较薄,因此能够抑制接合层30的导热性的下降。因此,能够从陶瓷构件10向金属构件20高效地传递热。
另外,根据本实施方式的接合体1a,接合材料32以铟为主要成分。由此,能够在比较低的温度下将陶瓷构件10与金属构件20接合。由于能够在比较低的温度下将陶瓷构件10与金属构件20接合,因此能够得到适合在低温下使用的接合体1a。
另外,根据本实施方式的静电卡盘1,在接合体1a中,能够抑制接合材料32从陶瓷构件10与金属构件20之间流出,能够提高陶瓷构件10与金属构件20的接合强度。由此,能够抑制因接合材料32向形成于接合体1a的、配置有电极端子15的贯通孔31a中漏出而导致的电极端子15的绝缘不良的发生。另外,能够抑制因接合材料32向配置有升降销18的贯通孔31b中漏出而导致的升降销18的动作不良的发生。另外,能够抑制因接合材料32向用于向载置面13供给氦气的贯通孔31c中漏出而导致的贯通孔31c的堵塞。因此,能够抑制静电卡盘1的功能丧失。
本实施方式的变形例
本发明不限于上述的实施方式,能够在不脱离其主旨的范围内以各种方式实施,例如也能够进行如下的变形。
[变形例1]
在上述的实施方式中,“接合体”具备陶瓷构件10和金属构件20。但是,构成“接合体”的构件的组合并不限定于此。例如,可以是陶瓷构件彼此接合而成的接合体,也可以是金属构件彼此接合而成的接合体。进而,也可以由陶瓷和金属以外的其他材料形成。例如,也可以由玻璃、环氧玻璃、热塑性树脂和热固性树脂等树脂、酚醛纸、环氧纸、玻璃复合材料、在表面形成有这些绝缘构件的金属构件等形成。
[变形例2]
在上述的实施方式中,金属层31为使镍(Ni)制的线材呈平纹组织状交叉而形成的网格构件。但是,金属层31并不限定于此。也可以是多孔材料、网眼构造材料、由金属纤维构成的毛毡。另外,使形成网格构件的多个线材交叉的方式并不限定于平纹组织状,也可以是斜纹组织状、斜纹荷兰编织组织状。进而,形成金属层31的材料并不限定于镍。金属层31也可以是钼(Mo)、钨(W)、钛(Ti)、铝(Al)、铜(Cu)、黄铜、它们的合金、或者不锈钢等金属制,也可以由金属以外的材料形成。
[变形例3]
在上述的实施方式中,金属层31在构成网格构件的线材的表面实施了镀银。但是,网格构件的线材的表面也可以由以银为主要成分的材料形成,网格构件本身也可以由银形成。另外,也可以在网格构件的表面不形成以银为主要成分的材料,也可以形成以金、铜为主要成分的材料。在该情况下,网格构件本身也可以由金、铜形成。另外,网格构件的表面也可以不由以金属为主要成分的材料形成。
[变形例4]
在上述的实施方式中,金属层31的网格间隔为70μm~1500μm,线材的线径为50μm~400μm。但是,网格构件的网格间隔及线径并不限定于此。通过将网格间隔设为70μm~1500μm,能够使接合材料32在接合界面的整个区域扩展,并且抑制空隙的产生,因此能够提高接合强度。另外,通过将线材的线径设为50μm~400μm,由此能够利用金属层31适度地防止接合材料32的流出,因此能够提高接合强度。
[变形例5]
在上述的实施方式中,铟相对于接合材料32的总重量的重量比例为100%。但是,铟的重量比例并不限定于此。只要相对于接合材料32的总重量的重量比例为50%以上即可。另外,铟的重量比例也可以不是50%以上,接合材料32自身在熔点时的表面张力也可以是1000mN/m以下。另外,接合材料的主要成分并不限定于铟。只要是熔点时的表面张力为300mN/m以上且1000mN/m以下的金属即可,例如也可以是锌、铅、锡等。
[变形例6]
在上述的实施方式中,静电卡盘1设于蚀刻装置。但是,静电卡盘1的应用领域并不限定于此。静电卡盘1也可以用于在半导体制造装置中进行晶圆的固定、矫正、输送等。进而,包括具有接合体1a的“保持装置”的装置并不限定于静电卡盘,例如也可以用作CVD(Chemical Vapor Deposition:化学气相沉积)装置、PVD(Physical Vapor Deposition:物理气相沉积)装置、PLD(Pulsed Laser Deposition:脉冲激光沉积)装置等基座(susceptor)、载置台。因此,对保持对象物进行保持的力并不限定于静电引力。
[变形例7]
在上述的实施方式中,在接合体中,也可以在陶瓷构件与接合层之间、以及金属构件与接合层之间的至少任一者具备金属层等其他层。其他的层例如也可以是通过形成接合层的接合材料中的钛的蒸发而形成的层、预先形成的金属化层等。
[变形例8]
在上述的实施方式中,陶瓷构件10、接合层30以及金属构件20的层叠体为大致圆形形状的柱状体。但是,“接合体”的形状并不限定于此。例如,也可以是矩形形状,还可以是多边形形状等。
以上基于实施方式、变形例对本方式进行了说明,但上述方式的实施方式是为了容易理解本方式,并不限定本方式。本方式能够在不脱离其主旨以及权利要求书的前提下进行变更、改良,并且本方式包含其等价物。另外,如果该技术特征在本说明书中没有作为必须的技术特征进行说明,则能够适当地删除。
附图标记说明
1、静电卡盘;1a、接合体;10、陶瓷构件;13、载置面;20、金属构件;30、接合层;31、金属层;32、接合材料;W、晶圆。
Claims (10)
1.一种接合体,其由第1构件和第2构件经由接合层接合而成,其特征在于,
所述接合层具备:
接合材料,其以熔点时的表面张力为1000mN/m以下的金属为主要成分;以及
金属层,在该金属层形成有多个孔,所述接合材料进入到所述孔的至少一部分。
2.根据权利要求1所述的接合体,其特征在于,
所述金属层由以钼或钨为主要成分的材料形成。
3.根据权利要求1所述的接合体,其特征在于,
所述金属层由以铝或钛为主要成分的材料形成。
4.根据权利要求1~3中任一项所述的接合体,其特征在于,
所述金属层是网格构件,
所述网格构件的线材的表面由以金、银、铜中的任一者为主要成分的材料形成。
5.根据权利要求1~4中任一项所述的接合体,其特征在于,
所述金属层是多个线材以呈平纹组织状、斜纹组织状或斜纹荷兰编织组织状中的任一形状交叉的方式形成的网格构件,
在所述线材中,与相邻的其他线材交叉的部分未与所述其他线材连接。
6.根据权利要求1~5中任一项所述的接合体,其特征在于,
所述金属层为网格构件,
网格间隔为70~1500μm。
7.根据权利要求1~6中任一项所述的接合体,其特征在于,
所述金属层为网格构件,
所述网格构件的线材的线径为50~400μm。
8.根据权利要求1~7中任一项所述的接合体,其特征在于,
所述接合材料以铟为主要成分。
9.一种保持装置,其特征在于,
该保持装置具备权利要求1~8中任一项所述的接合体,在所述第1构件形成有载置保持对象物的载置面。
10.一种静电卡盘,其特征在于,
该静电卡盘具备权利要求9所述的保持装置,
所述第1构件在内部具有静电吸附电极。
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