CN115206802A - 横向扩散金属氧化物半导体元件及其制作方法 - Google Patents
横向扩散金属氧化物半导体元件及其制作方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title abstract description 13
- 229910044991 metal oxide Inorganic materials 0.000 title abstract description 7
- 150000004706 metal oxides Chemical class 0.000 title abstract description 7
- 238000009792 diffusion process Methods 0.000 title abstract description 5
- 238000002955 isolation Methods 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 70
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 20
- 239000011229 interlayer Substances 0.000 claims description 17
- 125000006850 spacer group Chemical group 0.000 description 14
- 238000010586 diagram Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 5
- 229910000951 Aluminide Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- OQPDWFJSZHWILH-UHFFFAOYSA-N [Al].[Al].[Al].[Ti] Chemical compound [Al].[Al].[Al].[Ti] OQPDWFJSZHWILH-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910021324 titanium aluminide Inorganic materials 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- -1 silicon carbide nitride Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- QEQWDEBBDASYQQ-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[O--].[Sr++].[Ta+5].[Bi+3] Chemical compound [O--].[O--].[O--].[O--].[O--].[Sr++].[Ta+5].[Bi+3] QEQWDEBBDASYQQ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开一种横向扩散金属氧化物半导体元件及其制作方法,其中该制作横向扩散金属氧化物半导体元件的方法为,首先形成第一鳍状结构与第二鳍状结构于基底上,然后形成一浅沟隔离于第一鳍状结构与第二鳍状结构之间,形成第一栅极结构于该第一鳍状结构以及第二栅极结构于第二鳍状结构上,形成一源极区域于第一栅极结构一侧的第一鳍状结构上,形成一漏极区域于第二栅极结构一侧的第二鳍状结构上,再形成一接触场极板于浅沟隔离正上方。
Description
技术领域
本发明涉及一种制作半导体元件的方法,尤其是涉及一种整合横向扩散金属氧化物半导体元件(lateral diffused metal oxide semiconductor,LDMOS)与鳍状结构的方法。
背景技术
横向扩散金属氧化物半导体元件(lateral diffused MOS,LDMOS)因具有较高的操作频宽与操作效率,以及易与其他集成电路整合的平面结构,现已广泛地应用于高电压操作环境中,如中央处理器电源供应(CPU power supply)、电源管理***(powermanagement system)、直流/交流转换器(AC/DC converter)以及高功率或高频段的功率放大器等等。
另外,随着元件尺寸持续地缩小,现有平面式(planar)场效晶体管元件的发展已面临制作工艺上的极限。为了克服制作工艺限制,以非平面(non-planar)的场效晶体管元件,例如鳍状场效晶体管(fin field effect transistor,Fin FET)元件来取代平面晶体管元件已成为目前的主流发展趋势。由于鳍状场效晶体管元件的立体结构可增加栅极与鳍状结构的接触面积,因此,可进一步增加栅极对于载流子通道区域的控制,从而降低小尺寸元件面临的漏极引发能带降低(drain induced barrier lowering,DIBL)效应,并可以抑制短通道效应(short channel effect,SCE)。再者,由于鳍状场效晶体管元件在同样的栅极长度下会具有更宽的通道宽度,因而可获得加倍的漏极驱动电流。甚而,晶体管元件的临界电压(threshold voltage)也可通过调整栅极的功函数而加以调控。
然而随着元件尺寸持续缩小下现行横向扩散金属氧化物半导体元件与鳍状结构的整合上仍存在许多挑战,例如漏电流以及击穿电压的控制等等。因此,如何改良现有高压元件架构即为现今一重要课题。
发明内容
本发明一实施例揭露一种制作横向扩散金属氧化物半导体元件的方法。首先形成第一鳍状结构与第二鳍状结构于基底上,然后形成一浅沟隔离于第一鳍状结构与第二鳍状结构之间,形成第一栅极结构于该第一鳍状结构以及第二栅极结构于第二鳍状结构上,形成一源极区域于第一栅极结构一侧的第一鳍状结构上,形成一漏极区域于第二栅极结构一侧的第二鳍状结构上,再形成一接触场极板于浅沟隔离正上方。
本发明另一实施例揭露一种横向扩散金属氧化物半导体元件,其主要包含第一鳍状结构设于基底上、浅沟隔离设于该第一鳍状结构旁、第一栅极结构设于第一鳍状结构上以及一接触场极板设于第一栅极结构旁的浅沟隔离正上方。
本发明又一实施例揭露一种横向扩散金属氧化物半导体元件,其主要包含第一鳍状结构设于基底上、浅沟隔离设于第一鳍状结构旁、第一栅极结构设于第一鳍状结构与浅沟隔离上以及一接触场极板设于第一栅极结构旁的浅沟隔离正上方。
附图说明
图1至图4为本发明一实施例制作横向扩散金属氧化物半导体元件的方法示意图;
图5为本发明一实施例的横向扩散金属氧化物半导体元件的结构示意图;
图6为本发明一实施例的横向扩散金属氧化物半导体元件的结构示意图。
主要元件符号说明
12:基底
14:第一鳍状结构
16:第二鳍状结构
18:P阱
20:N阱
22:浅沟隔离
24:栅极结构
26:栅极结构
28:栅极结构
30:栅极结构
32:栅极介电层
34:栅极材料层
36:间隙壁
38:源极区域
40:漏极区域
42:层间介电层
44:介质层
46:高介电常数介电层
48:功函数金属层
50:低阻抗金属层
52:硬掩模
54:层间介电层
56:接触插塞
58:接触插塞
60:接触场极板
具体实施方式
请参照图1至图4,图1至图4为本发明一实施例制作一横向扩散金属氧化物半导体元件的方法示意图,其中图1为本发明一实施例的一横向扩散金属氧化物半导体元件的上视图而图2至图4则为图1中沿着切线AA’制作横向扩散金属氧化物半导体元件的剖面示意图。如图1至图2所示,首先提供一基底12,然后形成多条鳍状结构例如第一鳍状结构14与第二鳍状结构16于基底12上,并于第一鳍状结构14与第二鳍状结构16内形成第一阱区(例如P阱18)与第二阱区(例如N阱20)。接着形成一浅沟隔离(shallow trench isolation,STI)22于第一鳍状结构14与第二鳍状结构20之间,且浅沟隔离22上表面略低于第一鳍状结构14与第二鳍状结构16上表面。其中,第一阱区(例如P阱18)完全位于第一鳍状结构14内,而第二阱区(例如N阱20)则位于第二鳍状结构16与第一鳍状结构14内,此外,接触浅沟隔离22完全位于第二阱区(例如N阱20内)。
在本实施例中,基底12较佳由半导体材料所构成,例如可包括硅基底、外延硅基底、硅锗基底、碳化硅基底或硅覆绝缘(silicon-on-insulator,SOI)基底,浅沟隔离22较佳由氧化硅所构成,但均不以此为限。另外本实施例图1的上视图中虽以基底12上形成七条沿着Y方向延伸的第一鳍状结构14与七条第二鳍状结构16为例,但鳍状结构的数量均不局限于此而可视制作工艺或产品需求来调整。
依据本发明的优选实施例鳍状结构包括第一鳍状结构14与第二鳍状结构16较佳通过侧壁图案转移(sidewall image transfer,SIT)等技术制得,其程序大致包括:提供一布局图案至计算机***,并经过适当地运算以将相对应的图案定义于光掩模中。后续可通过光刻及蚀刻制作工艺,以形成多个等距且等宽的图案化牺牲层于基底上,使其个别外观呈现条状。之后依序施行沉积及蚀刻制作工艺,以于图案化牺牲层的各侧壁形成间隙壁。继以去除图案化牺牲层,并在间隙壁的覆盖下施行蚀刻制作工艺,使得间隙壁所构成的图案被转移至基底内,再伴随鳍状结构切割制作工艺(fin cut)而获得所需的图案化结构,例如条状图案化鳍状结构。
除此之外,鳍状结构的形成方式又可包含先形成一图案化掩模(图未示)于基底12上,再经过一蚀刻制作工艺,将图案化掩模的图案转移至基底12中以形成第一鳍状结构14与第二鳍状结构16。另外,鳍状结构的形成方式也可以先形成一图案化硬掩模层(图未示)于基底12上,并利用外延制作工艺于暴露出于图案化硬掩模层的基底12上成长出例如包含硅锗的半导体层,而此半导体层即可作为相对应的第一鳍状结构14与第二鳍状结构16。这些形成鳍状结构的实施例均属本发明所涵盖的范围。
接着形成一栅极结构24于第一鳍状结构14上、一栅极结构26于栅极结构24左侧的第一鳍状结构14上,以及栅极结构28与栅极结构30于第二鳍状结构16上。在本实施例中,上述栅极结构的制作方式可依据制作工艺需求以先栅极(gate first)制作工艺、后栅极(gate last)制作工艺的先高介电常数介电层(high-k first)制作工艺以及后栅极制作工艺的后高介电常数介电层(high-k last)制作工艺等方式制作完成。以本实施例的后高介电常数介电层制作工艺为例,可先依序形成一由氧化硅所构成的栅极介电层32或介质层、一由多晶硅所构成的栅极材料层34以及一选择性硬掩模(图未示)于基底12上,并利用一图案化光致抗蚀剂(图未示)当作掩模进行一图案转移制作工艺,以单次蚀刻或逐次蚀刻步骤,去除部分栅极材料层34与部分栅极介电层32,然后剥除图案化光致抗蚀剂,以于基底12上形成由图案化的栅极介电层32与图案化的栅极材料层34所构成的栅极结构24、26、28、30。
然后在各栅极结构24、26、28、30侧壁形成至少一间隙壁36,并于栅极结构24一侧的第一鳍状结构14内中形成由例如N+区域所构成的源极区域38以及栅极结构28一侧的第二鳍状结构16内形成由例如N+区域所构成的漏极区域40。在本实施例中,间隙壁36可为单一间隙壁或复合式间隙壁,例如可细部包含一偏位间隙壁与一主间隙壁。其中偏位间隙壁与主间隙壁可包含相同或不同材料,且两者均可选自由氧化硅、氮化硅、氮氧化硅以及氮碳化硅所构成的群组。源极区域38与漏极区域40可依据所置备晶体管的导电型式而包含不同掺质,例如可包含P型掺质或N型掺质。
如图3所示,接着可形成一层间介电层42于栅极结构24、26、28、30与浅沟隔离22上,并进行一平坦化制作工艺,例如利用化学机械研磨(chemical mechanical polishing,CMP)去除部分层间介电层42并暴露出由多晶硅材料所构成的栅极材料层34,使各栅极材料层34上表面与层间介电层42上表面齐平。随后进行一金属栅极置换制作工艺将栅极结构24转换为金属栅极。例如可先选择性形成一图案化掩模(图未示)盖住栅极结构26、28、30,再进行一选择性的干蚀刻或湿蚀刻制作工艺,例如利用氨水(ammonium hydroxide,NH4OH)或氢氧化四甲铵(Tetramethylammonium Hydroxide,TMAH)等蚀刻溶液来去除栅极结构24中的栅极材料层34甚至栅极介电层32以于层间介电层42中形成凹槽(图未示)。之后依序形成一介质层44、高介电常数介电层46以及至少包含功函数金属层48与低阻抗金属层50的导电层于凹槽内,并再搭配进行一平坦化制作工艺使U型高介电常数介电层46、U型功函数金属层48与低阻抗金属层50的表面与层间介电层42表面齐平。
在本实施例中,高介电常数介电层46包含介电常数大于4的介电材料,例如选自氧化铪(hafnium oxide,HfO2)、硅酸铪氧化合物(hafnium silicon oxide,HfSiO4)、硅酸铪氮氧化合物(hafnium silicon oxynitride,HfSiON)、氧化铝(aluminum oxide,Al2O3)、氧化镧(lanthanum oxide,La2O3)、氧化钽(tantalum oxide,Ta2O5)、氧化钇(yttrium oxide,Y2O3)、氧化锆(zirconium oxide,ZrO2)、钛酸锶(strontium titanate oxide,SrTiO3)、硅酸锆氧化合物(zirconium silicon oxide,ZrSiO4)、锆酸铪(hafnium zirconiumoxide,HfZrO4)、锶铋钽氧化物(strontium bismuth tantalate,SrBi2Ta2O9,SBT)、锆钛酸铅(leadzirconate titanate,PbZrxTi1-xO3,PZT)、钛酸钡锶(bariumstrontium titanate,BaxSr1- xTiO3,BST)、或其组合所组成的群组。
功函数金属层48较佳用以调整形成金属栅极的功函数,使其适用于N型晶体管(NMOS)或P型晶体管(PMOS)。若晶体管为N型晶体管,功函数金属层48可选用功函数为3.9电子伏特(eV)~4.3eV的金属材料,如铝化钛(TiAl)、铝化锆(ZrAl)、铝化钨(WAl)、铝化钽(TaAl)、铝化铪(HfAl)或TiAlC(碳化钛铝)等,但不以此为限;若晶体管为P型晶体管,功函数金属层48可选用功函数为4.8eV~5.2eV的金属材料,如氮化钛(TiN)、氮化钽(TaN)或碳化钽(TaC)等,但不以此为限。功函数金属层48与低阻抗金属层50之间可包含另一阻障层(图未示),其中阻障层的材料可包含钛(Ti)、氮化钛(TiN)、钽(Ta)、氮化钽(TaN)等材料。低阻抗金属层50则可选自铜(Cu)、铝(Al)、钨(W)、钛铝合金(TiAl)、钴钨磷化物(cobalttungsten phosphide,CoWP)等低电阻材料或其组合。由于依据金属栅极置换制作工艺将虚置栅极转换为金属栅极是此领域者所熟知技术,在此不另加赘述。接着可去除部分高介电常数介电层46、部分功函数金属层48与部分低阻抗金属层50形成凹槽(图未示),然后再填入一硬掩模52于凹槽内并使硬掩模52与层间介电层42表面齐平,其中硬掩模52可选自由氧化硅、氮化硅、氮氧化硅以及氮碳化硅所构成的群组。
如图4所示,之后可选择性形成另一层间介电层54于金属栅极所构成的栅极结构24与层间介电层42上,并进行一图案转移制作工艺,例如可利用一图案化掩模去除栅极结构24、26、28、30旁的部分的层间介电层42、54以形成多个接触洞(图未示)并暴露出源极区域38、漏极区域40以及浅沟隔离22。然后再于各接触洞中填入所需的导电材料,例如包含钛(Ti)、氮化钛(TiN)、钽(Ta)、氮化钽(TaN)等的阻障层材料以及选自钨(W)、铜(Cu)、铝(Al)、钛铝合金(TiAl)、钴钨磷化物(cobalt tungsten phosphide,CoWP)等低电阻材料或其组合的低阻抗金属层。之后进行一平坦化制作工艺,例如以化学机械研磨去除部分导电材料以形成接触插塞56接触并电连接源极区域38、接触插塞58接触并电连接漏极区域40以及接触场极板(contact field plate)60于浅沟隔离22上。至此即完成本发明较佳实施例一半导体元件的制作。
请再参照图4,图4为本发明一实施例的一横向扩散金属氧化物半导体元件的结构示意图。如图4所示,横向扩散金属氧化物半导体元件主要包含第一鳍状结构14与第二鳍状结构16设于基底12上,浅沟隔离22设于第一鳍状结构14与第二鳍状结构16之间,栅极结构24设于第一鳍状结构14上,栅极结构28设于第二鳍状结构16上,源极区域38设于栅极结构24一侧的第一鳍状结构14上,漏极区域40设于栅极结构28一侧的第二鳍状结构16上,层间介电层42、54环绕栅极结构24与栅极结构28,接触插塞56设于源极区域38上,接触插塞58设于漏极区域40上以及接触场极板60设于栅极结构24与栅极结构28之间的浅沟隔离22正上方并接触浅沟隔离22。如图1中所示,第一鳍状结构14与第二鳍状结构16较佳沿着第一方向例如X方向延伸而接触插塞56、接触插塞56以及接触场极板60则沿着第二方向例如Y方向延伸于基底12上。
需注意的是,由于接触场极板60与接触插塞56、58均从同一道制作工艺中完成,因此接触场极板60与接触插塞56、58较佳包含相同材料组成。另外从结构上来看,栅极结构26、28、30较佳为虚置栅极结构且其宽度较佳小于栅极结构24宽度,接触场极板60底部由于接触浅沟隔离22表面因此其底表面较佳低于接触插塞56、58底表面但接触场极板60顶表面较佳切齐接触插塞56、58顶表面。换句话说接触场极板60的整体高度较佳大于连接源极区域38的接触插塞56与连接漏极区域40的接触插塞58高度。
请继续参照图5,图5为本发明一实施例的一横向扩散金属氧化物半导体元件的结构示意图。如图5所示,相较于前述实施例中于仅将栅极结构24转换为金属栅极,依据本发明其他实施例又可于金属栅极置换制作工艺时省略前述图案化掩模的设置并同时将栅极结构24、26、28、30转换为金属栅极,亦即各栅极结构24、26、28、30中均包含介质层44、高介电常数介电层46、功函数金属层48以及低阻抗金属层50等金属栅极材料,此变化型也属本发明所涵盖的范围。
请继续参照图6,图6为本发明一实施例的一横向扩散金属氧化物半导体元件的结构示意图。如图6所示,横向扩散金属氧化物半导体元件主要包含第一鳍状结构14与第二鳍状结构16设于基底12上,浅沟隔离22设于第一鳍状结构14与第二鳍状结构16之间,栅极结构24设于第一鳍状结构14上,栅极结构28设于第二鳍状结构16上,源极区域38设于栅极结构24一侧的第一鳍状结构14上,漏极区域40设于栅极结构28一侧的第二鳍状结构16上,层间介电层42、54环绕栅极结构24与栅极结构28,接触插塞56设于源极区域38上,接触插塞58设于漏极区域40上以及接触场极板60设于栅极结构24与栅极结构28之间的浅沟隔离22正上方并接触浅沟隔离22。
相较于前述实施例中的栅极结构24仅设于第一鳍状结构14上但不延伸至浅沟隔离22上方或栅极结构24旁的间隙壁36切齐第一鳍状结构14侧壁,本实施例可选择以前述图案化制作工艺形成栅极结构24、26、28、30时将栅极结构24向右延伸并跨到浅沟隔离22正上方,之后再依据图3进行金属栅极置换制作工艺以及接触插塞制作工艺将栅极结构24转换为金属栅极并形成接触场极板60于栅极结构24旁。在本实施例中,栅极结构24与接触场极板60较佳同时设于浅沟隔离22上并接触浅沟隔离22,其中栅极结构24设于浅沟隔离22上的底表面较佳切齐接触场极板60底表面并低于第一鳍状结构14与第二鳍状结构16顶表面。
如同前述实施例,由于接触场极板60与接触插塞56、58均从同一道制作工艺中完成,因此接触场极板60与接触插塞56、58较佳包含相同材料组成。从结构上来看,设于接触场极板60与漏极区域40之间的栅极结构28较佳为虚置栅极结构且其宽度较佳小于栅极结构24宽度,接触场极板60底部由于接触浅沟隔离22表面因此其底表面较佳低于接触插塞56、58底表面但接触场极板60顶表面较佳切齐接触插塞56、58顶表面。换句话说接触场极板60的整体高度较佳大于连接源极区域38的接触插塞56与连接漏极区域40的接触插塞58高度。另外本实施例虽如图4实施例般以栅极结构24包含金属栅极而栅极结构26、28、30包含多晶硅栅极为例,但不局限于此,依据本发明其他实施例又可将延伸的栅极结构24套用至图5的实施例使栅极结构24、26、28、30均由金属栅极所构成,此变化型也属本发明所涵盖的范围。
一般而言,现行横向扩散金属氧化物半导体元件的栅极结构或栅极电极通常会向外延伸形成场极板来达到更高的击穿电压。为了在不额外增加成本与复杂化制作工艺的情况下改良现有设计,本发明主要在形成连接源极区域与漏极区域的接触插塞时同时于浅沟隔离正上方形成另一接触插塞作为接触场极板,使横向扩散金属氧化物半导体元件可利用接触场极板60、层间介电层42、54以及栅极结构24三者之间的耦合效应来提升元件的击穿电压。依据本发明不同实施例,除了形成接触场极板外扩散金属氧化物半导体元件的栅极结构可依据产品需求如图4与图5般不延伸至浅沟隔离上或如图6般延伸至浅沟隔离上使栅极结构与接触场极板两者同时接触并站在浅沟隔离上,这些变化型均属本发明所涵盖的范围。
以上所述仅为本发明的优选实施例,凡依本发明权利要求所做的均等变化与修饰,都应属本发明的涵盖范围。
Claims (20)
1.一种制作横向扩散金属氧化物半导体元件的方法,其特征在于,包含:
形成第一鳍状结构于基底上;
形成浅沟隔离于该第一鳍状结构旁;
形成第一栅极结构于该第一鳍状结构上;以及
形成接触场极板于该第一栅极结构旁的该浅沟隔离正上方。
2.如权利要求1所述的方法,另包含:
形成第二鳍状结构于该第一鳍状结构旁,其中该浅沟隔离设于该第一鳍状结构与该第二鳍状结构之间;
形成第二栅极结构于该第二鳍状结构上;
形成源极区域于该第一栅极结构一侧的该第一鳍状结构上;
形成漏极区域于该第二栅极结构一侧的该第二鳍状结构上;
形成层间介电层环绕该第一栅极结构与该第二栅极结构;
将该第一栅极结构与该第二栅极结构转换为第一金属栅极与第二金属栅极;以及
形成第一接触插塞于该源极区域上以及第二接触插塞于该漏极区域上。
3.如权利要求2所述的方法,其中该接触场极板设于该第一栅极结构与该第二栅极结构之间。
4.如权利要求2所述的方法,其中该第二栅极结构宽度小于该第一栅极结构宽度。
5.如权利要求2所述的方法,其中该接触场极板以及该第一接触插塞包含相同材料。
6.如权利要求2所述的方法,其中该接触场极板底表面低于该第一接触插塞底表面。
7.如权利要求2所述的方法,其中该接触场极板顶表面切齐该第一接触插塞顶表面。
8.一种横向扩散金属氧化物半导体元件,其特征在于,包含:
第一鳍状结构,设于基底上;
浅沟隔离,设于该第一鳍状结构旁;
第一栅极结构,设于该第一鳍状结构上;以及
接触场极板,设于该第一栅极结构旁的该浅沟隔离正上方。
9.如权利要求8所述的横向扩散金属氧化物半导体元件,另包含:
第二鳍状结构,设于该第一鳍状结构旁,其中该浅沟隔离设于该第一鳍状结构与该第二鳍状结构之间;
第二栅极结构,设于该第二鳍状结构上;
源极区域,设于该第一栅极结构一侧的该第一鳍状结构上;
漏极区域,设于该第二栅极结构一侧的该第二鳍状结构上;
层间介电层,环绕该第一栅极结构与该第二栅极结构;以及
第一接触插塞,设于该源极区域上以及第二接触插塞设于该漏极区域上。
10.如权利要求9所述的横向扩散金属氧化物半导体元件,其中该接触场极板设于该第一栅极结构与该第二栅极结构之间。
11.如权利要求9所述的横向扩散金属氧化物半导体元件,其中该第二栅极结构宽度小于该第一栅极结构宽度。
12.如权利要求9所述的横向扩散金属氧化物半导体元件,其中该接触场极板以及该第一接触插塞包含相同材料。
13.如权利要求9所述的横向扩散金属氧化物半导体元件,其中该接触场极板底表面低于该第一接触插塞底表面。
14.如权利要求9所述的横向扩散金属氧化物半导体元件,其中该接触场极板顶表面切齐该第一接触插塞顶表面。
15.一种横向扩散金属氧化物半导体元件,其特征在于,包含:
第一鳍状结构,设于基底上;
浅沟隔离,设于该第一鳍状结构旁;
第一栅极结构,设于该第一鳍状结构以及该浅沟隔离上;以及
接触场极板,设于该第一栅极结构旁的该浅沟隔离正上方。
16.如权利要求15所述的横向扩散金属氧化物半导体元件,另包含:
第二鳍状结构,设于该第一鳍状结构旁,其中该浅沟隔离设于该第一鳍状结构与该第二鳍状结构之间;
第二栅极结构,设于该第二鳍状结构上;
源极区域,设于该第一栅极结构一侧的该第一鳍状结构上;
漏极区域,设于该第二栅极结构一侧的该第二鳍状结构上;
层间介电层,环绕该第一栅极结构与该第二栅极结构;以及
设于该源极区域上的第一接触插塞和设于该漏极区域上的第二接触插塞。
17.如权利要求16所述的横向扩散金属氧化物半导体元件,其中该接触场极板设于该第一栅极结构与该第二栅极结构之间。
18.如权利要求16所述的横向扩散金属氧化物半导体元件,其中该接触场极板以及该第一接触插塞包含相同材料。
19.如权利要求16所述的横向扩散金属氧化物半导体元件,其中该接触场极板底表面低于该第一接触插塞底表面。
20.如权利要求16所述的横向扩散金属氧化物半导体元件,其中该接触场极板顶表面切齐该第一接触插塞顶表面。
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