CN115084819B - Millimeter wave power synthesizer and method for transition from dielectric integrated waveguide to rectangular waveguide - Google Patents
Millimeter wave power synthesizer and method for transition from dielectric integrated waveguide to rectangular waveguide Download PDFInfo
- Publication number
- CN115084819B CN115084819B CN202210852014.0A CN202210852014A CN115084819B CN 115084819 B CN115084819 B CN 115084819B CN 202210852014 A CN202210852014 A CN 202210852014A CN 115084819 B CN115084819 B CN 115084819B
- Authority
- CN
- China
- Prior art keywords
- circuit board
- port
- power
- gradient
- rectangular waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000007704 transition Effects 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000000523 sample Substances 0.000 claims abstract description 137
- 230000008859 change Effects 0.000 claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 16
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 16
- 238000001308 synthesis method Methods 0.000 claims abstract description 6
- 238000000429 assembly Methods 0.000 claims description 2
- 230000000712 assembly Effects 0.000 claims description 2
- 230000002194 synthesizing effect Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
The invention discloses a millimeter wave power synthesizer and a millimeter wave power synthesis method for transition from a dielectric integrated waveguide to a rectangular waveguide, wherein the millimeter wave power synthesis method for transition from the dielectric integrated waveguide to the rectangular waveguide comprises the following steps of S1: the first port and the second port of the first circuit board both input power such that the power input by the first port and the power input by the second port are first synthesized by the dielectric integrated waveguide and the first synthesized first power is transferred to the taper probe of the first circuit board. The invention discloses a millimeter wave power synthesizer and a millimeter wave power synthesizer method for transition from a dielectric integrated waveguide to a rectangular waveguide, which are linked through the rectangular waveguide, a first circuit board and a second circuit board, and each circuit board is provided with a gradual change probe and the dielectric integrated waveguide, so that constant-amplitude in-phase or constant-amplitude anti-phase output is realized, and power synthesis and equal division are realized through four ports of the two circuit boards.
Description
Technical Field
The invention belongs to the technical field of millimeter wave power processing, and particularly relates to a millimeter wave power synthesizer with excessive dielectric integrated waveguide to rectangular waveguide and a millimeter wave power synthesis method with excessive dielectric integrated waveguide to rectangular waveguide.
Background
In recent years, SIW (substrate integrated waveguide, dielectric integrated waveguide) has been developed rapidly. As a novel transmission line structure, the advantages of the traditional rectangular waveguide and the microstrip line are combined, and the novel transmission line structure becomes the current pet.
SIW has the advantages of higher quality factor, low radiation loss, easy integration, small volume, light weight, easy processing and the like. Many of the conventional systems use conventional rectangular waveguides, and the conventional waveguide-to-integrated circuit conversion mostly uses coaxial conversion to realize power distribution and synthesis.
With the increase of frequency, the processing precision required by the traditional coaxial conversion is higher and higher, and the bandwidth is difficult to meet the use requirement.
Accordingly, the above problems are further improved.
Disclosure of Invention
The invention mainly aims to provide a millimeter wave power synthesizer and a millimeter wave power method for transition from a dielectric integrated waveguide to a rectangular waveguide, wherein the millimeter wave power synthesizer and the millimeter wave power method are linked through the rectangular waveguide, a first circuit board and a second circuit board, and each circuit board is provided with a gradual change probe and the dielectric integrated waveguide, so that equal-amplitude in-phase or equal-amplitude opposite-phase output is realized, and the synthesis and the equipartition of power are realized through four ports of the two circuit boards.
In order to achieve the above purpose, the invention provides a millimeter wave power synthesis method for transition from a dielectric integrated waveguide to a rectangular waveguide, which comprises the following steps:
step S1: the first port and the second port of the first circuit board are both input with power (the first port and the second port are the same), so that the power input by the first port and the power input by the second port are subjected to first synthesis through the dielectric integrated waveguide (of the first circuit board) and the first synthesized first power is transmitted to the gradient probe of the first circuit board, and then the gradient probe of the first circuit board mounted on the first mounting groove part of the rectangular waveguide transmits the first power (the gradient probe converts the quasi-TEM mode transmitted in the first circuit board into the TE10 mode transmitted in the rectangular waveguide);
step S2 (in synchronization with step S1): the third port and the fourth port of the second circuit board are both input with power (the third port and the fourth port are the same), so that the power input by the third port and the power input by the fourth port are subjected to second synthesis through the dielectric integrated waveguide (of the second circuit board) and the second synthesized second power is transmitted to the gradient probe of the second circuit board, and then the gradient probe of the second circuit board mounted at the second mounting groove part of the rectangular waveguide transmits the second power (the gradient probe converts the quasi-TEM mode transmitted in the second circuit board into the TE10 mode transmitted in the rectangular waveguide);
step S3: the rectangular waveguide synthesizes the received first power and the second power, and then the power input by the first port, the second port, the third port and the fourth port is integrated (step S1-3 realizes power synthesis);
step S4: the power is input from the rectangular waveguide, and the power is respectively transmitted to the first circuit board and the second circuit board which are connected (through the respective gradient probes), the power input to the first circuit board is subjected to first average division through the first gradient microstrip line and the second gradient microstrip line, so that two paths of power are output at the first port and the second port, the power input to the second circuit board is subjected to second average division through the first gradient microstrip line and the second gradient microstrip line, so that two paths of power are output at the third port and the fourth port, and finally the power input by the rectangular waveguide is subjected to one-to-four division (step S4 is realized.
As a further preferable technical scheme of the technical scheme, the ground layer of the first circuit board and the ground layer of the second circuit board are close to each other, and the signal layer of the first circuit board and the signal layer of the second circuit board are far away from each other.
As a further preferable technical solution of the above technical solution, in step S4, the orientations of the gradation probe of the first circuit board and the gradation probe of the second circuit board are set, so as to adjust output phase differences of the first port, the second port, the third port, and the fourth port, wherein:
when the gradient probes of the first circuit board and the gradient probes of the second circuit board are arranged in a first direction, namely the extending direction of the first gradient probe assembly of the first circuit board is opposite to the extending direction of the first gradient probe assembly of the second circuit board, the extending direction of the second gradient probe assembly of the first circuit board is opposite to the extending direction of the second gradient probe assembly of the second circuit board, the output of the gradient probes of the first circuit board and the output of the gradient probes of the second circuit board are in equal amplitude inversion, namely the first port and the third port are in equal amplitude inversion, and the second port and the fourth port are in equal amplitude inversion;
when the gradient probes of the first circuit board and the gradient probes of the second circuit board are arranged in the second direction, namely, the extending direction of the first gradient probe assembly of the first circuit board is the same as the extending direction of the first gradient probe assembly of the second circuit board, the extending direction of the second gradient probe assembly of the first circuit board is the same as the extending direction of the second gradient probe assembly of the second circuit board, the output of the gradient probes of the first circuit board and the output of the gradient probes of the second circuit board are in the same phase with each other in equal amplitude, namely, the first port and the third port are in the same phase in equal amplitude, and the second port and the fourth port are in the same phase in equal amplitude.
In order to achieve the above object, the present invention further provides a millimeter wave power combiner with transition from a dielectric integrated waveguide to a rectangular waveguide, comprising a rectangular waveguide, a first circuit board and a second circuit board, wherein:
the first port and the second port of the first circuit board are both input with power (the first port and the second port are the same), so that the power input by the first port and the power input by the second port are subjected to first synthesis through the dielectric integrated waveguide (of the first circuit board) and the first synthesized first power is transmitted to the gradient probe of the first circuit board, and then the gradient probe of the first circuit board mounted on the first mounting groove part of the rectangular waveguide transmits the first power;
the third port and the fourth port of the second circuit board are both input with power (the third port and the fourth port are the same), so that the power input by the third port and the power input by the fourth port are subjected to second synthesis through the dielectric integrated waveguide (of the second circuit board) and the second synthesized second power is transmitted to the gradient probe of the second circuit board, and then the gradient probe of the second circuit board mounted at the second mounting groove part of the rectangular waveguide transmits the second power;
the rectangular waveguide synthesizes the received first power and the second power, and then the power input by the first port, the second port, the third port and the fourth port is integrated (power synthesis is realized);
the power is input from the rectangular waveguide and is transmitted to the connected first circuit board and second circuit board (through the respective gradient probes), the power input to the first circuit board is subjected to first average division through the first gradient microstrip line and the second gradient microstrip line, so that two paths of power are output at the first port and the second port, the power input to the second circuit board is subjected to second average division through the first gradient microstrip line and the second gradient microstrip line, so that two paths of power are output at the third port and the fourth port, and finally the power input by the rectangular waveguide is subjected to one-to-four division (power average division is realized).
As a further preferable aspect of the above-described technical aspect, the first gradation probe assembly and the second gradation probe assembly constitute a gradation probe and an extending direction of the first gradation probe assembly is opposite to an extending direction of the second gradation probe assembly.
Drawings
Fig. 1 is a perspective view of the entire millimeter wave power combiner and method of the present invention for dielectric integrated waveguide to rectangular waveguide transition.
Fig. 2A is a side view (signal layer angle) of a first circuit board (or a second circuit board) of the dielectric integrated waveguide to rectangular waveguide transition millimeter wave power combiner and method of the present invention.
Fig. 2B is a side view (ground plane angle) of a first circuit board (or a second circuit board) of the dielectric integrated waveguide to rectangular waveguide transition millimeter wave power combiner and method of the present invention.
Fig. 3 is a perspective view of a first circuit board (or a second circuit board) of the dielectric integrated waveguide to rectangular waveguide transition millimeter wave power combiner and method of the present invention.
Fig. 4 is a perspective view of a rectangular waveguide of the dielectric integrated waveguide to rectangular waveguide transition millimeter wave power combiner and method of the present invention.
Fig. 5A is a schematic diagram of return loss (triangle mark) and insertion loss set in a first orientation of the dielectric integrated waveguide to rectangular waveguide transition millimeter wave power combiner and method of the present invention.
Fig. 5B is a four-way output phase diagram of a first orientation setting of a millimeter wave power combiner and method of the invention for dielectric integrated waveguide to rectangular waveguide transition.
Fig. 6A is a schematic diagram of return loss (triangle mark) and insertion loss for a second orientation setting of the dielectric integrated waveguide to rectangular waveguide transition millimeter wave power combiner and method of the present invention.
Fig. 6B is a four-way output phase diagram of a second orientation setup of a millimeter wave power combiner and method of the present invention for dielectric integrated waveguide to rectangular waveguide transition.
The reference numerals include: 100. a rectangular waveguide; 110. a first mounting groove portion; 120. a second mounting groove portion; 200. a first circuit board; 210. a signal layer; 211. a first graded probe assembly; 212. a first dielectric integrated waveguide assembly; 213. a first graded microstrip line; 214. a second graded microstrip line; 215. a via hole; 216. a first port; 217. a second port; 220. a dielectric layer; 230. a ground layer; 231. a second graded probe assembly; 232. a second dielectric integrated waveguide assembly; 300. a second circuit board; 310. a third port; 320. and a fourth port.
Detailed Description
The following description is presented to enable one of ordinary skill in the art to make and use the invention. The preferred embodiments in the following description are by way of example only and other obvious variations will occur to those skilled in the art. The basic principles of the invention defined in the following description may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.
In a preferred embodiment of the present invention, it should be noted by those skilled in the art that rectangular waveguides and the like to which the present invention relates can be regarded as prior art.
Preferred embodiments.
The invention discloses a millimeter wave power synthesis method for transition from a dielectric integrated waveguide to a rectangular waveguide, which comprises the following steps:
step S1: the first port 216 and the second port 217 of the first circuit board 200 each input power (the first port and the second port are the same) such that the power input by the first port 216 and the power input by the second port 217 are first synthesized by the dielectric integrated waveguide (of the first circuit board) and the first synthesized first power is transmitted to the gradation probe of the first circuit board 200, and the gradation probe of the first circuit board 200 mounted in the first mounting groove section 110 of the rectangular waveguide 100 transmits the first power (the gradation probe converts the quasi-TEM mode transmitted in the first circuit board into the TE10 mode transmitted in the rectangular waveguide);
step S2 (in synchronization with step S1): the third port 310 and the fourth port 320 of the second circuit board 300 each input power (the third port and the fourth port are the same) such that the power input by the third port 310 and the power input by the fourth port 320 are second synthesized by the dielectric integrated waveguide (of the second circuit board) and the second synthesized second power is transmitted to the gradation probe of the second circuit board 300, and the gradation probe of the second circuit board 300 mounted at the second mounting groove portion 120 of the rectangular waveguide 100 transmits the second power (the gradation probe converts the quasi-TEM mode transmitted in the second circuit board into the TE10 mode transmitted in the rectangular waveguide);
step S3: the rectangular waveguide 100 synthesizes the received first power and the second power, and further performs four-in-one on the power input by the first port 216, the second port 217, the third port 310 and the fourth port 320 (step S1-3 realizes power synthesis);
step S4: the power is input from the rectangular waveguide 100, and the power is transferred to the connected first circuit board 200 and second circuit board 300 (through respective gradation probes), the power input to the first circuit board 200 is first divided by the first gradation microstrip line and the second gradation microstrip line, so that two paths of power are output at the first port 216 and the second port 217, the power input to the second circuit board 300 is second divided by the first gradation microstrip line and the second gradation microstrip line, so that two paths of power are output at the third port 310 and the fourth port 320, and finally the power input to the rectangular waveguide is divided by one and four (step S4 realizes the power division).
Specifically, the ground layer of the first circuit board 200 and the ground layer of the second circuit board 300 are close to each other, and the signal layer of the first circuit board 200 and the signal layer of the second circuit board 300 are far away from each other.
More specifically, in step S4, the orientations of the gradation probe of the first circuit board 200 and the gradation probe of the second circuit board 300 are set so as to adjust the output phase differences of the first port 216, the second port 217, the third port 218, and the fourth port 219, wherein:
when the gradient probes of the first circuit board 200 and the gradient probes of the second circuit board 300 are arranged in the first direction, that is, the extending direction of the first gradient probe assembly of the first circuit board is opposite to the extending direction of the first gradient probe assembly of the second circuit board, the extending direction of the second gradient probe assembly of the first circuit board is opposite to the extending direction of the second gradient probe assembly of the second circuit board, the output of the gradient probes of the first circuit board and the output of the gradient probes of the second circuit board are in equal amplitude inversion, that is, the first port and the third port are in equal amplitude inversion, and the second port and the fourth port are in equal amplitude inversion;
when the gradient probes of the first circuit board 200 and the gradient probes of the second circuit board 300 are arranged in the second direction, that is, the extending direction of the first gradient probe assembly of the first circuit board is the same as the extending direction of the first gradient probe assembly of the second circuit board, the extending direction of the second gradient probe assembly of the first circuit board is the same as the extending direction of the second gradient probe assembly of the second circuit board, the output of the gradient probes of the first circuit board and the output of the gradient probes of the second circuit board are in the same phase with each other in equal amplitude, that is, the first port and the third port are in the same phase in equal amplitude, and the second port and the fourth port are in the same phase in equal amplitude.
The invention also discloses a millimeter wave power synthesizer with transition from the dielectric integrated waveguide to the rectangular waveguide, which comprises the rectangular waveguide, a first circuit board and a second circuit board, wherein:
the first port 216 and the second port 217 of the first circuit board 200 each input power (the first port and the second port are the same) such that the power input by the first port 216 and the power input by the second port 217 are first synthesized through the dielectric integrated waveguide (of the first circuit board) and the first synthesized first power is transmitted to the gradation probe of the first circuit board 200, and thus the gradation probe of the first circuit board 200 mounted at the first mounting groove portion 110 of the rectangular waveguide 100 transmits the first power;
the third port 310 and the fourth port 320 of the second circuit board 300 each input power (the third port and the fourth port are the same) such that the power input from the third port 310 and the power input from the fourth port 320 are second synthesized through the dielectric integrated waveguide (of the second circuit board) and the second synthesized second power is transferred to the gradation probe of the second circuit board 300, and thus the gradation probe of the second circuit board 300 mounted at the second mounting groove portion 120 of the rectangular waveguide 100 transfers the second power;
the rectangular waveguide 100 synthesizes the received first power and the second power, and further performs four-in-one (realizes power synthesis) on the power input by the first port 216, the second port 217, the third port 310 and the fourth port 320;
the power is input from the rectangular waveguide 100, and the power is transmitted to the connected first circuit board 200 and second circuit board 300 (through respective gradient probes), the power input to the first circuit board 200 is first divided into two paths of power through the first gradient microstrip line and the second gradient microstrip line, so that the power input to the second circuit board 300 is second divided into two paths of power through the first gradient microstrip line and the second gradient microstrip line, so that the power input to the rectangular waveguide is finally divided into one to four paths (so as to realize power division) at the third port 310 and the fourth port 320.
Specifically, the first and second gradation probe assemblies constitute gradation probes and the extending direction of the first gradation probe assembly is opposite to the extending direction of the second gradation probe assembly.
The first circuit board 200 and the second circuit board 300 are respectively provided with a signal layer 210, a dielectric layer 220 and a ground layer 230, and the dielectric layer 220 is positioned between the signal layer 210 and the ground layer 230;
the signal layer 210 includes a first graded probe assembly 211, a first dielectric integrated waveguide assembly 212, a first graded microstrip line 213, and a second graded microstrip line 214, one side of the first dielectric integrated waveguide assembly 212 is connected to the first graded probe assembly 211 and the other side (the side far from the first graded probe assembly) of the first dielectric integrated waveguide assembly 212 is connected to the first graded microstrip line 213 and the second graded microstrip line 214, respectively;
the ground layer 230 includes a second graded probe assembly 231 and a second dielectric integrated waveguide assembly 232, the second graded probe assembly 231 and the first graded probe assembly 211 are (inversely) symmetrical with respect to the dielectric layer 220 (i.e., the extending directions of the first graded probe assembly and the second graded probe assembly are opposite), and the first dielectric integrated waveguide assembly 212 and the second dielectric integrated waveguide assembly 232 are each provided with a via 215.
Specifically, the first taper probe assembly 211 and the second taper probe assembly 231 form a taper probe, the first taper probe assembly 211 gradually decreases in size in a direction away from the first dielectric integrated waveguide assembly 212 and the second taper probe assembly 231 gradually decreases in size in a direction away from the second dielectric integrated waveguide assembly 232.
More specifically, the rectangular waveguide 100 includes a first mounting groove 110 and a second mounting groove 120, and the taper probe of the first circuit board 200 is mounted to the first mounting groove 110 and the taper probe of the second circuit board 300 is mounted to the second mounting groove 120.
Further, the first dielectric integrated waveguide assembly 212 and the second dielectric integrated waveguide assembly 232 constitute a dielectric integrated waveguide.
Further, one end of the first graded microstrip line of the first circuit board 200 far from the first dielectric integrated waveguide assembly is a first port 216 and one end of the second graded microstrip line of the first circuit board far from the first dielectric integrated waveguide assembly is a second port 217;
the end of the first graded microstrip line of the second circuit board 300 far from the first dielectric integrated waveguide assembly is a third port 310 and the end of the second graded microstrip line of the second circuit board far from the first dielectric integrated waveguide assembly is a fourth port 320.
Preferably, the ground layer of the first circuit board 200 and the ground layer of the second circuit board 300 are close to each other, and the signal layer of the first circuit board 200 and the signal layer of the second circuit board 300 are far away from each other, wherein:
when the gradation probes of the first circuit board 200 and the gradation probes of the second circuit board 300 are arranged in the first direction (the antisymmetric arrangement, the direction in which the first gradation probe assembly of the first circuit board extends is opposite to the direction in which the first gradation probe assembly of the second circuit board extends, the direction in which the second gradation probe assembly of the first circuit board extends is opposite to the direction in which the second gradation probe assembly of the second circuit board extends), the output of the gradation probes of the first circuit board and the output of the gradation probes of the second circuit board are in equal amplitude inversion (equal amplitude inversion of the first port and the third port, equal amplitude inversion of the second port and the fourth port);
when the gradation probes of the first circuit board 200 and the gradation probes of the second circuit board 300 are arranged in the second direction (symmetrically, the extending direction of the first gradation probe assembly of the first circuit board is the same as the extending direction of the first gradation probe assembly of the second circuit board, and the extending direction of the second gradation probe assembly of the first circuit board is the same as the extending direction of the second gradation probe assembly of the second circuit board), the output of the gradation probes of the first circuit board and the output of the gradation probes of the second circuit board are in the same phase with each other in the same amplitude.
The principle of the invention is as follows:
rectangular waveguide, this embodiment takes WR-28 as an example, where the internal cross-sectional dimensions are: 7.12mm by 3.556mm, wherein one surface is closed, and two mounting groove parts are formed on the surface.
The circuit board (PCB) adopts a double-layer structure, the upper and lower surfaces are metal (the thickness of the embodiment is set to 35um, the upper surface is a signal layer, the lower surface is a grounding layer), the middle is a dielectric layer (dielectric constant 2.2, loss tangent 0.0009) and the thickness is 0.254mm. The structure comprises:
graded microstrip line (active impedance conversion);
SIW (dielectric integrated waveguide): consists of two layers of metal on the upper and lower surfaces and two rows of periodic through holes.
Gradual change probe: the upper surface and the lower surface form antisymmetry, and the effect is that: mode conversion, electromagnetic wave transmission mode conversion, namely, the mutual conversion of a quasi-TEM mode in a circuit board and a TE10 mode of a rectangular waveguide.
When doing work:
the energy is input by the traditional rectangular waveguide and is divided into two paths through the gradual change probe, and each path is divided into two paths through the circuit board, so that four paths of power splitters (a first port, a second port, a third port and a fourth port and can be connected with 4 antennas) are formed.
The two PCBs are symmetrically inserted into the traditional waveguide, can output constant-amplitude in-phase output (a first port, a third port, a second port and a fourth port), and can output constant-amplitude opposite-phase output through anti-symmetrical insertion.
The microstrip line output port on the first circuit board is arranged as a first port and a second port which are in phase
The microstrip line output port on the second circuit board is set as a third port and a fourth port, which are in phase.
When power synthesis is performed:
the input energy is synthesized by the first port, the second port, the third port and the fourth port, the input energy of the first port and the input energy of the second port are synthesized on the first circuit board, the input energy of the third port and the input energy of the fourth port are synthesized on the second circuit board, and then the energy of the first circuit board and the energy of the second circuit board are synthesized on the rectangular waveguide, so that four-in-one is realized.
It should be noted that technical features such as rectangular waveguide related to the present application should be regarded as the prior art, and specific structures, working principles, and control modes and spatial arrangements related to the technical features may be selected conventionally in the art, and should not be regarded as the invention point of the present application, which is not further specifically described in detail.
Modifications of the embodiments described above, or equivalents of some of the features may be made by those skilled in the art, and any modifications, equivalents, improvements or etc. within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (5)
1. The millimeter wave power synthesis method for transition from the dielectric integrated waveguide to the rectangular waveguide is characterized by comprising the following steps of:
step S1: the first port and the second port of the first circuit board are respectively input with power, so that the power input by the first port and the power input by the second port are subjected to first synthesis through the dielectric integrated waveguide and the first synthesized first power is transmitted to the gradual change probe of the first circuit board, and the gradual change probe of the first circuit board arranged at the first mounting groove part of the rectangular waveguide is used for transmitting the first power;
step S2: the third port and the fourth port of the second circuit board are respectively input with power, so that the power input by the third port and the power input by the fourth port are subjected to second synthesis through the dielectric integrated waveguide and the second synthesized second power is transmitted to the gradual change probe of the second circuit board, and the gradual change probe of the second circuit board arranged at the second mounting groove part of the rectangular waveguide is used for transmitting the second power;
step S3: the rectangular waveguide synthesizes the received first power and the received second power, and then the power input by the first port, the second port, the third port and the fourth port is integrated;
step S4: the power is input from the rectangular waveguide and is respectively transmitted to a first circuit board and a second circuit board which are connected, the power input to the first circuit board is subjected to first average division through a first gradual change microstrip line and a second gradual change microstrip line, so that two paths of power are output at a first port and a second port, the power input to the second circuit board is subjected to second average division through the first gradual change microstrip line and the second gradual change microstrip line, so that two paths of power are output at a third port and a fourth port, and finally the power input by the rectangular waveguide is subjected to one-to-four division.
2. The method of claim 1, wherein the ground layer of the first circuit board and the ground layer of the second circuit board are adjacent to each other, and the signal layer of the first circuit board and the signal layer of the second circuit board are distant from each other.
3. The method for synthesizing excessive millimeter wave power from a dielectric integrated waveguide to a rectangular waveguide according to claim 2, wherein in step S4, the orientations of the gradation probe of the first circuit board and the gradation probe of the second circuit board are set so as to adjust the output phase differences of the first port, the second port, the third port, and the fourth port, wherein:
when the gradient probes of the first circuit board and the gradient probes of the second circuit board are arranged in a first direction, namely the extending direction of the first gradient probe assembly of the first circuit board is opposite to the extending direction of the first gradient probe assembly of the second circuit board, the extending direction of the second gradient probe assembly of the first circuit board is opposite to the extending direction of the second gradient probe assembly of the second circuit board, the output of the gradient probes of the first circuit board and the output of the gradient probes of the second circuit board are in equal amplitude inversion, namely the first port and the third port are in equal amplitude inversion, and the second port and the fourth port are in equal amplitude inversion;
when the gradient probes of the first circuit board and the gradient probes of the second circuit board are arranged in the second direction, namely, the extending direction of the first gradient probe assembly of the first circuit board is the same as the extending direction of the first gradient probe assembly of the second circuit board, the extending direction of the second gradient probe assembly of the first circuit board is the same as the extending direction of the second gradient probe assembly of the second circuit board, the output of the gradient probes of the first circuit board and the output of the gradient probes of the second circuit board are in the same phase with each other in equal amplitude, namely, the first port and the third port are in the same phase in equal amplitude, and the second port and the fourth port are in the same phase in equal amplitude.
4. A millimeter wave power combiner with dielectric integrated waveguide-to-rectangular waveguide transition, applied to the millimeter wave power combiner with dielectric integrated waveguide-to-rectangular waveguide transition of any one of claims 1-3, comprising a rectangular waveguide, a first circuit board, and a second circuit board, wherein:
the first port and the second port of the first circuit board are respectively input with power, so that the power input by the first port and the power input by the second port are subjected to first synthesis through the dielectric integrated waveguide and the first synthesized first power is transmitted to the gradual change probe of the first circuit board, and the gradual change probe of the first circuit board arranged at the first mounting groove part of the rectangular waveguide is used for transmitting the first power;
the third port and the fourth port of the second circuit board are respectively input with power, so that the power input by the third port and the power input by the fourth port are subjected to second synthesis through the dielectric integrated waveguide and the second synthesized second power is transmitted to the gradual change probe of the second circuit board, and the gradual change probe of the second circuit board arranged at the second mounting groove part of the rectangular waveguide is used for transmitting the second power;
the rectangular waveguide synthesizes the received first power and the received second power, and then the power input by the first port, the second port, the third port and the fourth port is integrated;
the power is input from the rectangular waveguide and is respectively transmitted to a first circuit board and a second circuit board which are connected, the power input to the first circuit board is subjected to first average division through a first gradual change microstrip line and a second gradual change microstrip line, so that two paths of power are output at a first port and a second port, the power input to the second circuit board is subjected to second average division through the first gradual change microstrip line and the second gradual change microstrip line, so that two paths of power are output at a third port and a fourth port, and finally the power input by the rectangular waveguide is subjected to one-to-four division.
5. A dielectric integrated waveguide to rectangular waveguide transition millimeter wave power combiner as recited in claim 4, wherein the first and second taper probe assemblies form taper probes and wherein the direction of extension of the first taper probe assembly is opposite the direction of extension of the second taper probe assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210852014.0A CN115084819B (en) | 2022-07-19 | 2022-07-19 | Millimeter wave power synthesizer and method for transition from dielectric integrated waveguide to rectangular waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210852014.0A CN115084819B (en) | 2022-07-19 | 2022-07-19 | Millimeter wave power synthesizer and method for transition from dielectric integrated waveguide to rectangular waveguide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115084819A CN115084819A (en) | 2022-09-20 |
| CN115084819B true CN115084819B (en) | 2023-05-23 |
Family
ID=83259718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210852014.0A Active CN115084819B (en) | 2022-07-19 | 2022-07-19 | Millimeter wave power synthesizer and method for transition from dielectric integrated waveguide to rectangular waveguide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115084819B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326862A (en) * | 2018-10-26 | 2019-02-12 | 中电科仪器仪表有限公司 | A kind of combined type millimeter wave narrow side power splitter and power combining methods |
| CN110265758A (en) * | 2019-07-04 | 2019-09-20 | 华南理工大学 | Three rank bandstop filters and communication equipment |
| CN112164853A (en) * | 2020-09-25 | 2021-01-01 | 南京航空航天大学 | Forward wave directional coupler based on microstrip line and substrate integrated waveguide structure |
| CN112688081A (en) * | 2020-12-15 | 2021-04-20 | 重庆邮电大学 | Broadband cavity-backed planar slot array antenna based on dielectric integrated waveguide |
-
2022
- 2022-07-19 CN CN202210852014.0A patent/CN115084819B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326862A (en) * | 2018-10-26 | 2019-02-12 | 中电科仪器仪表有限公司 | A kind of combined type millimeter wave narrow side power splitter and power combining methods |
| CN110265758A (en) * | 2019-07-04 | 2019-09-20 | 华南理工大学 | Three rank bandstop filters and communication equipment |
| CN112164853A (en) * | 2020-09-25 | 2021-01-01 | 南京航空航天大学 | Forward wave directional coupler based on microstrip line and substrate integrated waveguide structure |
| CN112688081A (en) * | 2020-12-15 | 2021-04-20 | 重庆邮电大学 | Broadband cavity-backed planar slot array antenna based on dielectric integrated waveguide |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115084819A (en) | 2022-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3888186B1 (en) | Ridge gap waveguide and multilayer antenna array including the same | |
| JP4133747B2 (en) | Input / output coupling structure of dielectric waveguide | |
| Jeong et al. | Design and analysis of swapped port coupler and its application in a miniaturized Butler matrix | |
| CN202940807U (en) | Butler matrix used for beam forming network | |
| CN203326077U (en) | Coplanar waveguide feed substrate integration waveguide broadband power divider | |
| CN106230465A (en) | Millimeter wave multichannel transmitting-receiving circuit module and power division network high density integrated circuit | |
| WO1996031916A1 (en) | A coaxial cable transition arrangement | |
| CN115568094A (en) | Switch based on substrate integrated fin line structure | |
| CN111063975A (en) | Ka-band GYSEL power divider based on ridge gap waveguide | |
| CN106856260B (en) | Miniaturized broadband dual-polarized antenna feed network | |
| US10505251B2 (en) | Cable for coupling a coaxial line to a strip-line including a coupling ground plane for reducing passive intermodulation interference in the cable | |
| CN115084819B (en) | Millimeter wave power synthesizer and method for transition from dielectric integrated waveguide to rectangular waveguide | |
| CN106549203B (en) | A kind of conversion circuit of coupled microstrip line to rectangular waveguide | |
| Guo et al. | Half-mode composite waveguide | |
| Chang et al. | A 3-dB quadrature coupler using broadside-coupled coplanar waveguides | |
| CN205406692U (en) | Continuous reconfigurable power distribution ware of power distribution proportion | |
| CN207938785U (en) | A kind of right-angled intersection light guide module | |
| CN112242612A (en) | Patch antenna | |
| CN100388556C (en) | Chip-integrated waveguide 180-degree 3-db oriented coupler | |
| CN115473025A (en) | Waveguide difference port magic T based on microstrip-waveguide hybrid integration | |
| CN217768722U (en) | Broadband millimeter wave power synthesizer for transition from medium integrated waveguide to rectangular waveguide | |
| KR20100005616A (en) | Rf transmission line for preventing loss | |
| CN110518321B (en) | Switching structure of substrate integrated waveguide horizontal transition air rectangular waveguide | |
| CN112165175A (en) | Complementary artificial impedance interface electromagnetic wave transmission line with high transmission efficiency | |
| CN216357496U (en) | Easy-to-integrate end-fire broadband phased array antenna |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No. 0459, Unit 209, No. 62 Chengyi North Street, Software Park Phase III, Torch High tech Zone, Xiamen City, Fujian Province, 361000 Patentee after: Sijie Microelectronics (Xiamen) Co.,Ltd. Address before: 201800 room j461, building 6, 1288 Yecheng Road, Jiading District, Shanghai Patentee before: SHANGHAI SILICON MICROELECTRONICS Co.,Ltd. |