CN115069636A - Method for cleaning quartz parts for semiconductors - Google Patents
Method for cleaning quartz parts for semiconductors Download PDFInfo
- Publication number
- CN115069636A CN115069636A CN202210472136.7A CN202210472136A CN115069636A CN 115069636 A CN115069636 A CN 115069636A CN 202210472136 A CN202210472136 A CN 202210472136A CN 115069636 A CN115069636 A CN 115069636A
- Authority
- CN
- China
- Prior art keywords
- quartz
- cleaning
- deionized water
- acid solution
- chelating agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010453 quartz Substances 0.000 title claims abstract description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 238000004140 cleaning Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000008367 deionised water Substances 0.000 claims abstract description 21
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002738 chelating agent Substances 0.000 claims abstract description 9
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229960003330 pentetic acid Drugs 0.000 claims abstract description 8
- 238000005406 washing Methods 0.000 claims abstract description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- 238000002791 soaking Methods 0.000 claims abstract description 7
- XOHCVEDNEBOCBH-UHFFFAOYSA-N 2-methyl-2-(prop-2-enoylamino)propane-1-sulfonic acid;prop-2-enoic acid Chemical compound OC(=O)C=C.OS(=O)(=O)CC(C)(C)NC(=O)C=C XOHCVEDNEBOCBH-UHFFFAOYSA-N 0.000 claims 1
- 239000004094 surface-active agent Substances 0.000 claims 1
- 229910021645 metal ion Inorganic materials 0.000 abstract description 12
- 239000013522 chelant Substances 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/02—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a method for cleaning a quartz part for a semiconductor, which comprises the following steps: s1, firstly, washing the surface of the quartz component by using deionized water, and drying the quartz surface by using filtered dry nitrogen; s2, adding the chelating agent containing at least one of acrylic acid-2-acrylamide-2-methylpropanesulfonic acid solution and diethylenetriaminepentaacetic acid solution for soaking; and S3, finally overflowing with deionized water to obtain the cleaned quartz parts. In the cleaning method, the deionized water realizes the removal of most impurities on the surface; the chelating agent realizes the removal of metal ions; the surface chelate is removed by overflowing the deionized water; the cleaning method realizes that the content of fifteen metal ions on the surface of the quartz product is lower than 0.1ppb and can reach 0.001ppb at least, and the used chelating agent is relatively weak, has very small corrosivity on the quartz piece, and has the characteristics of safety, reliability and high efficiency.
Description
Technical Field
The invention relates to a method for cleaning a quartz component for a semiconductor.
Background
Quartz has the advantages of high temperature resistance, corrosion resistance, excellent mechanical properties, high light transmission efficiency and the like, is widely applied to industries such as semiconductors, optics and the like, and is generally processed into ingots, cylinders, rods, tubes and the like before further processing. The specific application direction comprises the processing and manufacturing of MEMS, CMOS, CCD sensors, microwave circuits, Internet of things arrays, various laser devices and optical devices. Compared with the traditional application, when the quartz is used for producing parts for semiconductors, the requirement on the surface quality of the quartz is higher, and the requirement on the surface smoothness is more severe. The method comprises the processes of material manufacturing, blank preparation, precise annealing, multi-knife cutting, forming processing, precise grinding and polishing, finished product inspection, cleaning and packaging. The development of the quartz surface cleaning technology can increase the use times of quartz equipment or devices, improve the utilization rate, bring higher economic benefits for industrial development, and simultaneously, the recycling also conforms to the environmental protection concept of the contemporary society. In recent years, with the progress of industry, quartz surface cleaning technology has been developed to a certain extent, but in the conventional cleaning technology, metal ions on the surface of a quartz product are difficult to clean by using a common cleaning agent, the residual metal ions affect the quality of parts for semiconductors, and the used reagent has certain corrosiveness to the quartz product. Therefore, the demand for a cleaning technology which has the characteristics of safety, environmental protection, convenience, high-efficiency cleaning and the like is more urgent.
Disclosure of Invention
The invention aims to solve the technical problem that in the prior art, metal ions on the surface of a quartz part for a semiconductor are difficult to clean by adopting a common cleaning agent, and the residual metal ions on the quartz part can influence the quality of a corresponding product, and provides a using method of a chelating agent for cleaning quartz.
In order to solve the technical problems, the invention provides the following technical scheme:
a method for cleaning a quartz component for a semiconductor, comprising the steps of:
s1, firstly, washing the quartz surface with deionized water for 0.5 hour, and drying the quartz surface with filtered dry nitrogen;
s2, adding quartz into a chelating agent containing at least one of acrylic acid-2-acrylamide-2-methylpropanesulfonic acid solution and diethylenetriaminepentaacetic acid solution for soaking for 30-90 min;
and S3, finally overflowing with deionized water for 3 hours to obtain a cleaned quartz product.
The invention has the following beneficial effects: the method for cleaning the quartz product has the advantages that the effect is obvious, the quartz product is safe, the cost is reduced, the pollutants on the surface of the quartz product are removed by adopting deionized water for washing, the quartz product is dried by adopting inert gas, the safety coefficient is high, and the stability of metal ions on the surface of the quartz product can be maintained; the metal chelating agent is used for removing metal ions, and the acrylic acid-2-acrylamide-2-methylpropanesulfonic acid has good dispersibility and can better capture the metal ions to form a chelate; the addition of the chelating agent diethylenetriamine pentaethyl is more beneficial to the removal of metal ions; in addition, the chelate formed in the invention is relatively weak, has very small corrosivity on quartz pieces, and does not cause harm to human bodies and environment.
Detailed Description
The following description of the preferred embodiments of the present invention is provided for the purpose of illustration and description, and is in no way intended to limit the invention.
Example 1
A method for cleaning a quartz component for a semiconductor, comprising the steps of:
s1, firstly, washing the quartz surface with deionized water for 0.5 hour, and drying the quartz surface with filtered dry nitrogen;
s2, adding 7 wt% of acrylic acid-2-acrylamide-2-methylpropanesulfonic acid solution according to the mass percentage, and soaking for 30 minutes;
and S3, finally overflowing with deionized water for 3 hours to obtain a cleaned quartz product.
Example 2
A method for cleaning a quartz component for a semiconductor, comprising the steps of:
s1, firstly, washing the quartz surface with deionized water for 0.5 hour, and drying the quartz surface with filtered dry nitrogen;
s2, soaking in a mixed deionized water solution of 7 wt% of acrylic acid-2-acrylamide-2-methylpropanesulfonic acid and 3 wt% of diethylenetriamine pentaacetic acid for 90 minutes;
and S3, finally overflowing with deionized water for 3 hours to obtain a cleaned quartz product.
Example 3
A method for cleaning a quartz component for a semiconductor comprises the following steps:
s1, firstly, washing the quartz surface with deionized water for 0.5 hour, and drying the quartz surface with filtered dry nitrogen;
s2, soaking in a mixed deionized water solution of 5 wt% of acrylic acid-2-acrylamide-2-methylpropanesulfonic acid and 5 wt% of diethylenetriamine pentaacetic acid for 90 minutes;
and S3, finally overflowing with deionized water for 3 hours to obtain a cleaned quartz product.
Example 4
A method for cleaning a quartz component for a semiconductor comprises the following steps:
s1, firstly, washing the quartz surface with deionized water for 0.5 hour, and drying the quartz surface with filtered dry nitrogen;
s2, adding a 7 wt% diethylenetriamine pentaacetic acid solution, and soaking for 90 minutes;
and S3, finally overflowing with deionized water for 3 hours to obtain a cleaned quartz product.
The method for cleaning the quartz parts for the semiconductors has the best cleaning effect of the quartz parts in the embodiment 2, and the steps are sequentially carried out as the embodiment 3, the embodiment 1 and the embodiment 4; the results of the tests performed in examples 1, 2, 3, and 4 showed that the concentrations of fifteen metal ions (Li, Na, Mg, Al, K, Ca, Cr, Mn, Fe, Co, Ni, Cu, Zn, Cd, and Ba) were as follows:
the concentrations of fifteen metal ions (Li, Na, Mg, Al, K, Ca, Cr, Mn, Fe, Co, Ni, Cu, Zn, Cd and Ba) detected in the four embodiments are all lower than 0.10ppb level, can reach 0.001ppb at least, can be almost ignored, and has very obvious effect compared with other cleaning processes.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A method for cleaning a quartz component for a semiconductor, comprising the steps of:
s1, firstly, washing the quartz surface with deionized water, and drying the quartz surface with filtered dry nitrogen;
s2, adding quartz into a chelating agent containing at least one of acrylic acid-2-acrylamide-2-methylpropanesulfonic acid solution and diethylenetriaminepentaacetic acid solution for soaking;
and S3, finally overflowing with deionized water to obtain the cleaned quartz product.
2. The method of cleaning quartz of claim 1, wherein the deionized water in S1 rinses the quartz surface for 0.5 hour.
3. A method of cleaning a quartz member for a semiconductor according to claim 1, wherein the step of immersing the quartz member in S2 is carried out for 30 to 90 min.
4. A method of cleaning a quartz member for a semiconductor device according to claim 1, wherein the diethylenetriaminepentaacetic acid solution used has both a chelating agent action and a surfactant action.
5. The method of cleaning a quartz member for a semiconductor according to claim 1, wherein the concentration of the acrylic acid-2-acrylamido-2-methylpropanesulfonic acid solution and the concentration of the diethylenetriaminepentaacetic acid solution are both 1 to 10% by weight.
6. A method of cleaning a quartz member for semiconductor according to claim 1, wherein the flooding time of the deionized water in S3 is not less than 3 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210472136.7A CN115069636A (en) | 2022-04-29 | 2022-04-29 | Method for cleaning quartz parts for semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210472136.7A CN115069636A (en) | 2022-04-29 | 2022-04-29 | Method for cleaning quartz parts for semiconductors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115069636A true CN115069636A (en) | 2022-09-20 |
Family
ID=83247468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210472136.7A Pending CN115069636A (en) | 2022-04-29 | 2022-04-29 | Method for cleaning quartz parts for semiconductors |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115069636A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101400773A (en) * | 2006-03-31 | 2009-04-01 | 花王株式会社 | Cleaning composition |
| CN101928519A (en) * | 2009-06-23 | 2010-12-29 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and preparation method thereof |
| CN102358870A (en) * | 2011-09-23 | 2012-02-22 | 王晗 | Novel cleaning agent |
| CN102660409A (en) * | 2012-05-14 | 2012-09-12 | 陕西省石油化工研究设计院 | Cleaning agent for silicon wafer of photovoltaic cell and preparation method for cleaning agent |
| CN106824901A (en) * | 2017-02-28 | 2017-06-13 | 北京北方华创微电子装备有限公司 | A kind of horizontal quartz boat cleaning machine and cleaning method |
| CN107354018A (en) * | 2017-05-20 | 2017-11-17 | 合肥市惠科精密模具有限公司 | A kind of high-efficiency environment friendly LCDs cleaning agent |
| CN107532115A (en) * | 2015-06-24 | 2018-01-02 | 花王株式会社 | Glass hard disk substrate cleansing composition |
| CN108130225A (en) * | 2016-12-01 | 2018-06-08 | 广州蓝月亮实业有限公司 | A kind of cleaning compositions, detergent and its preparation method and application |
| CN109504554A (en) * | 2019-01-03 | 2019-03-22 | 深圳市天正隆科技有限公司 | A kind of glass cleaner and preparation method thereof |
| CN109852484A (en) * | 2019-01-29 | 2019-06-07 | 福建晶安光电有限公司 | A kind of cleaning agent of chip |
-
2022
- 2022-04-29 CN CN202210472136.7A patent/CN115069636A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101400773A (en) * | 2006-03-31 | 2009-04-01 | 花王株式会社 | Cleaning composition |
| CN101928519A (en) * | 2009-06-23 | 2010-12-29 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and preparation method thereof |
| CN102358870A (en) * | 2011-09-23 | 2012-02-22 | 王晗 | Novel cleaning agent |
| CN102660409A (en) * | 2012-05-14 | 2012-09-12 | 陕西省石油化工研究设计院 | Cleaning agent for silicon wafer of photovoltaic cell and preparation method for cleaning agent |
| CN107532115A (en) * | 2015-06-24 | 2018-01-02 | 花王株式会社 | Glass hard disk substrate cleansing composition |
| CN108130225A (en) * | 2016-12-01 | 2018-06-08 | 广州蓝月亮实业有限公司 | A kind of cleaning compositions, detergent and its preparation method and application |
| CN106824901A (en) * | 2017-02-28 | 2017-06-13 | 北京北方华创微电子装备有限公司 | A kind of horizontal quartz boat cleaning machine and cleaning method |
| CN107354018A (en) * | 2017-05-20 | 2017-11-17 | 合肥市惠科精密模具有限公司 | A kind of high-efficiency environment friendly LCDs cleaning agent |
| CN109504554A (en) * | 2019-01-03 | 2019-03-22 | 深圳市天正隆科技有限公司 | A kind of glass cleaner and preparation method thereof |
| CN109852484A (en) * | 2019-01-29 | 2019-06-07 | 福建晶安光电有限公司 | A kind of cleaning agent of chip |
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|---|
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