CN115029747A - Probe processing method and probe - Google Patents
Probe processing method and probe Download PDFInfo
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- CN115029747A CN115029747A CN202210885060.0A CN202210885060A CN115029747A CN 115029747 A CN115029747 A CN 115029747A CN 202210885060 A CN202210885060 A CN 202210885060A CN 115029747 A CN115029747 A CN 115029747A
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- 239000000523 sample Substances 0.000 title claims abstract description 169
- 238000003672 processing method Methods 0.000 title claims abstract description 21
- 238000007747 plating Methods 0.000 claims abstract description 30
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 27
- 239000010948 rhodium Substances 0.000 claims abstract description 27
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000009713 electroplating Methods 0.000 claims abstract description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 27
- 229910052802 copper Inorganic materials 0.000 claims description 27
- 239000010949 copper Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- 238000004140 cleaning Methods 0.000 claims description 19
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 238000005238 degreasing Methods 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 6
- 239000012153 distilled water Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 239000000243 solution Substances 0.000 description 32
- 239000000463 material Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 229910000881 Cu alloy Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910000510 noble metal Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- YWFDDXXMOPZFFM-UHFFFAOYSA-H rhodium(3+);trisulfate Chemical compound [Rh+3].[Rh+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O YWFDDXXMOPZFFM-UHFFFAOYSA-H 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- UYVZCGGFTICJMW-UHFFFAOYSA-N [Ir].[Au] Chemical compound [Ir].[Au] UYVZCGGFTICJMW-UHFFFAOYSA-N 0.000 description 1
- YDZWPBPSQHXITB-UHFFFAOYSA-N [Rh].[Au] Chemical compound [Rh].[Au] YDZWPBPSQHXITB-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/50—Electroplating: Baths therefor from solutions of platinum group metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
- G01R1/06738—Geometry aspects related to tip portion
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06755—Material aspects
- G01R1/06761—Material aspects related to layers
Abstract
The embodiment of the specification provides a probe processing method and a probe, and the probe processing method comprises the following steps: covering a photosensitive film, exposing the part to be processed of the probe, developing the exposed part of the probe, and electroplating the developed part of the probe by using rhodium plating solution. The photosensitive film is covered firstly, then the part to be processed of the probe is exposed, the exposed part to be processed is developed, accurate positioning of the part to be processed of the probe is guaranteed, the part of the probe after being developed is electroplated by using the rhodium plating solution, local electroplating of the probe can be completed, electroplating cost can be saved, the processed probe has good conductivity, meanwhile, the hardness of the part of the probe after being processed can be improved, and the service life of the probe is guaranteed.
Description
Technical Field
The specification relates to the technical field of probe processing, in particular to a probe processing method and a probe.
Background
Wafer Probing semiconductor Wafer testing is an important link in the semiconductor manufacturing industry, and not only can inspect the manufacturing defects and yield of the Wafer fab, but also can avoid the waste of subsequent packaging. The probe used in the wafer test is an important functional component for communication between the tester and the chip to be tested on the wafer, and is very important for testing the mechanical property of the probe.
In the testing process, the needle point of the probe needs to be continuously contacted with the I/O pad of the chip to be kept in electrical connection with the chip, so that higher requirements are provided for the hardness of the needle point, the copper alloy probe for general testing has lower hardness, and the needle point is seriously abraded after long-time use until the copper alloy probe fails.
Disclosure of Invention
In view of this, embodiments of the present disclosure provide a probe processing method and a probe, which can ensure good conductivity of the probe and improve hardness of a portion of the probe after processing by performing rhodium plating on the portion of the probe to be processed.
The embodiment of the specification provides the following technical scheme: a probe processing method, comprising:
covering a photosensitive film;
exposing a part to be processed of the probe;
developing the exposed part of the probe;
and electroplating the developed part of the probe by using rhodium plating solution.
Preferably, the part to be treated of the probe includes a tip of the probe.
Preferably, before the covering the photosensitive film, the method further includes: the probe and the copper sheet are integrally connected through the connecting rib.
Preferably, the cover photosensitive film includes: and covering a photosensitive film on the whole copper sheet.
Preferably, after the plating of the portion of the probe after the development with the rhodium plating solution, the method further comprises: the solution is used to remove the dry film in the unexposed areas.
Preferably, the solution includes a photosensitive film cleaning solution.
Preferably, after removing the dry film of the unexposed area using the solution, the method further comprises: and cutting off the connecting ribs on the copper sheet to obtain the rhodium-plated probe.
Preferably, the electroplating thickness of the part to be treated of the probe is 1-1.5 um.
Preferably, the electroplating the developed part of the probe with the rhodium plating solution includes: chemical degreasing, electrolytic degreasing, pure water cleaning, immersing in dilute sulfuric acid with the mass fraction of 5%, distilled water cleaning, current and voltage regulation and rhodium plating.
A probe treated using any of the methods described above.
Compared with the prior art, the embodiment of the specification adopts at least one technical scheme which can achieve the beneficial effects that at least:
according to the invention, the photosensitive film is covered firstly, then the part to be processed of the probe is exposed, and then the exposed part to be processed is developed, so that the accurate positioning of the part to be processed of the probe is ensured, the part of the probe after being developed is electroplated by using the rhodium plating solution, the local electroplating of the probe can be completed, the electroplating cost can be saved, the processed probe has good conductivity, meanwhile, the hardness of the part of the probe after being processed can be improved, and the service life of the probe is ensured.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic flow chart of a probe processing method according to the present invention;
FIG. 2 is a schematic view showing the integral connection between a probe and a copper sheet according to a probe processing method provided by the present invention;
FIG. 3 is a schematic diagram of a probe covered with a photosensitive film according to a probe processing method of the present invention;
FIG. 4 is a schematic illustration of a probe after development by a probe processing method according to the present invention;
FIG. 5 is a schematic diagram of a probe after being electroplated according to a probe processing method provided by the present invention;
FIG. 6 is a schematic diagram of a single probe of a probe processing method provided by the present invention;
FIG. 7 is a graph of untreated probe hardness test data provided by the present invention;
FIG. 8 is a graph of hardness test data for probes processed by the probe processing method of the present invention.
Detailed Description
The embodiments of the present application will be described in detail below with reference to the accompanying drawings.
The following description of the embodiments of the present application is provided by way of specific examples, and other advantages and effects of the present application will be readily apparent to those skilled in the art from the disclosure herein. It should be apparent that the described embodiments are only a few embodiments of the present application, and not all embodiments. The application is capable of other and different embodiments and its several details are capable of modifications and various changes in detail without departing from the spirit of the application. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It is noted that various aspects of the embodiments are described below within the scope of the appended claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the present application, one skilled in the art should appreciate that one aspect described herein may be implemented independently of any other aspects and that two or more of these aspects may be combined in various ways. For example, an apparatus may be implemented and/or a method practiced using any number and aspects set forth herein. Additionally, such an apparatus may be implemented and/or such a method may be practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should be further noted that the drawings provided in the following embodiments are only schematic illustrations of the basic concepts of the present application, and the drawings only show the components related to the present application rather than the numbers, shapes and dimensions of the components in actual implementation, and the types, the numbers and the proportions of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
In addition, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, it will be understood by those skilled in the art that the aspects may be practiced without these specific details.
At present, in the process of probing a semiconductor wafer, a probe tip of a probe needs to be continuously in contact with an I/O pad of a chip to be kept in electrical connection with the chip, and the probe is easy to damage after being used for a long time due to the fact that the hardness of the probe is generally low, and in the prior art, the problem of the hardness of the probe tip is mainly solved from the following aspects:
1. carrying out heat treatment on the copper alloy, so that the hardness of the material is greatly improved; the maximum hardness of the copper alloy can reach 350-400HV through heat treatment, but the heat treatment can improve the hardness and simultaneously lead to the reduction of the conductivity of the probe, so that the probe is easy to burn under the condition of large current, and the application range of the probe is limited to a great extent.
2. The probe such as rhodium gold and iridium gold is made of noble metal materials with excellent service performance, the noble metals have high hardness of 450-700HV, excellent conductivity of 25-35% IACS, long service life and rich use scenes; however, the price of the noble metal is 5-10 times that of gold, and the production cost of the probe is increased.
In the invention, the inventor designs a probe treatment method through extensive and deep experiments, which can improve the local hardness of the probe and save the cost.
The technical problem solved by the invention is as follows: the hardness of the probe is improved, and the cost is reduced.
More specifically, the solution adopted by the invention comprises: the photosensitive film is covered firstly, then the part to be processed of the probe is exposed, the exposed part to be processed is developed, accurate positioning of the part to be processed of the probe is guaranteed, the part of the probe after being developed is electroplated by using the rhodium plating solution, local electroplating of the probe can be completed, electroplating cost can be saved, the processed probe has good conductivity, meanwhile, the hardness of the part of the probe after being processed can be improved, and the service life of the probe is guaranteed.
The technical solutions provided by the embodiments of the present application are described below with reference to the accompanying drawings.
As shown in fig. 1 and 3 to 5, a probe processing method includes:
covering a photosensitive film;
exposing a part to be processed (namely the part needing electroplating) of the probe;
developing the exposed part of the probe;
and electroplating the developed part of the probe by using rhodium plating solution.
The probe is completely covered by the photosensitive film when the photosensitive film is covered, then the part to be processed of the probe is exposed (only the part to be processed needs to be exposed when the photosensitive film is exposed), the exposed photosensitive film is hardened so as to facilitate the development of subsequent steps, the exposed part to be processed is developed, the exposed part to be processed is dissolved by the developing solution, a region to be plated (namely the needle point part of the probe) is exposed, the accurate positioning of the part to be processed of the probe is ensured, the part developed by the probe is electroplated by the rhodium-plated solution, the local electroplating of the probe can be completed, the electroplating cost can be saved, the processed probe has good conductivity, the hardness of the part processed by the probe can be improved, and the service life of the probe is ensured.
In some embodiments, the part to be processed of the probe comprises the probe tip of the probe, the hardness of the probe tip of the probe can be effectively improved by processing the probe tip of the probe, and only the probe tip is in contact with a chip during probe testing, so that the probe tip of the probe is only required to be ensured not to be worn, other parts of the probe are not required to be electroplated, the use of rhodium plating solution can be effectively reduced, and the cost is reduced.
As shown in fig. 2, in some embodiments, before the covering the photosensitive film, the method further includes: make probe and copper sheet wholly be connected through the splice bar, concrete operation is: the method comprises the steps of selecting a base material (the base material can be copper alloy) with high conductivity and low hardness to manufacture a probe, processing the probe according to a design drawing, designing corresponding connecting ribs to enable the probe to be integrally connected with a copper sheet, cutting off redundant base material parts, and facilitating subsequent electroplating on the tip of the probe, so that the probe is integrally connected with the copper sheet (namely a base material frame) through the connecting ribs, and the microprobe is ensured to keep high rigidity and not to deform during electroplating.
As shown in fig. 3, in some embodiments, the covering photosensitive film includes: and cutting a proper photosensitive film according to the size of the copper sheet, and covering the photosensitive film on the whole copper sheet to ensure that the photosensitive film completely covers the surface of the copper sheet so as to facilitate subsequent operation.
As shown in fig. 5, in some embodiments, after electroplating the developed part of the probe (i.e., the tip part of the probe) by using the rhodium plating solution, the method further comprises: the dry film of the unexposed area (namely the probe is removed from other parts of the needle point part) is removed by using the solution, and the dry film of the unexposed area is removed by using the solution, so that the dry film is prevented from being attached to the probe, the follow-up operation on the probe is facilitated, and the use performance of the probe is ensured.
Further, the solution comprises a photosensitive film cleaning solution, the main components of the photosensitive film cleaning solution are organic solution, alkaline solution and water, and the dry film in the unexposed area is cleaned by using the photosensitive film cleaning solution, so that the removal effect of the dry film on the probe is ensured.
It should be noted that the photosensitive film cleaning solution may be selected according to the type of the photosensitive film to ensure the cleaning effect of the photosensitive film, and will not be described in detail herein.
In some embodiments, after removing the dry film of the unexposed regions using the solution, the method further comprises: cutting off the connecting ribs on the copper sheet to obtain the rhodium-plated probe, cleaning a dry film on the probe, cutting off the connecting ribs, and separating the rhodium-plated probe from the parent metal to obtain a single rhodium-plated probe so as to facilitate further processing and use of the rhodium-plated probe.
In some embodiments, the electroplating thickness of the part to be treated of the probe is 1-1.5 um, and rhodium with the thickness of 1-1.5 um is electroplated on the part to be treated (namely, the needle point part) of the probe, so that the good conductivity of the probe is ensured, the hardness of the needle point is greatly improved by electroplating rhodium, and the service life of the probe is ensured.
In some embodiments, the electroplating the developed part of the probe with the rhodium plating solution comprises: chemical degreasing, electrolytic degreasing, pure water cleaning, immersing in dilute sulfuric acid with the mass fraction of 5%, distilled water cleaning, current and voltage regulation and rhodium plating;
chemical degreasing: removing grease on the surface of the copper sheet by using an alkaline solution;
electrolytic degreasing: further removing grease on the copper sheet in an electrolytic degreasing mode;
cleaning with pure water: cleaning the copper sheet by using pure water to avoid the copper sheet being contaminated by impurities;
immersing in dilute sulfuric acid with the mass fraction of 5%: the copper sheet is put into dilute sulphuric acid with the mass fraction of 5 percent for 20S to 30S, so as to further remove impurities;
cleaning with distilled water: washing the copper sheet by distilled water, and washing the dilute sulfuric acid attached to the copper sheet;
adjusting current and voltage: the electroplating voltage is 2.4-5.8V, and the current density is 0.4-1.8A/dm 2 ；
Plating rhodium: when rhodium is plated, a rhodium sulfate solution is selected, and the concentration of rhodium sulfate is 3-8 g/L.
Referring to fig. 1-6, in the present invention, a base material (the base material may be a copper alloy) with high conductivity but low hardness is selected to manufacture a probe, the probe is processed according to a design drawing, corresponding connecting ribs are designed to integrally connect the probe and a copper sheet, and a surplus base material portion is cut off to connect the probe with the copper sheet through the connecting ribs (i.e., a base material frame), and the detailed structure is shown in fig. 2, so as to ensure that the microprobe can maintain high rigidity without deformation during electroplating, a suitable photosensitive film is cut according to the size of the copper sheet, the copper sheet is entirely covered with the photosensitive film to completely cover the surface of the copper sheet, and referring to fig. 3, the portion to be processed of the probe is exposed to facilitate the development of the subsequent steps, the exposed portion to be processed is developed, and the exposed portion to be processed is dissolved by a developing solution, exposing a region to be plated (namely a probe tip part), referring to fig. 4, ensuring accurate positioning of the probe to be processed part, selecting a rhodium plating solution to plate the probe tip part, referring to fig. 5, wherein the plating thickness is 1-1.5 um, after the plating operation is finished, cleaning a dry film in an unexposed region by using a photosensitive film cleaning solution, and cutting off connecting ribs on a copper sheet to obtain a single rhodium-plated probe, wherein the specific structure of the single probe is shown in fig. 6.
The invention can accurately position the 10-20um needle tip of the microprobe and then carry out electroplating, can save the use of rhodium plating solution, reduce the rhodium plating cost, and the hardness of the needle tip after rhodium plating is improved from 290HV to more than 400HV compared with the parent metal, and the specific test data is shown in figures 7-8, thereby greatly improving the abrasion resistance of the needle tip and simultaneously controlling the production cost compared with the probe made of noble metal by adopting local electroplating.
Based on the same inventive concept, the embodiment of the present specification provides a probe, wherein the probe is processed by using any one of the methods.
By adopting the method to process the probe, the rhodium plating on the tip part of the probe can be realized, the processed probe has good conductivity, the hardness of the treated tip of the probe can be improved, and the service life of the probe can be ensured.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments can be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the method embodiments described later, since they correspond to the system, the description is simple, and for the relevant points, reference may be made to the partial description of the system embodiments.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A probe processing method, comprising:
covering a photosensitive film;
exposing a part to be processed of the probe;
developing the exposed part of the probe;
and electroplating the developed part of the probe by using rhodium plating solution.
2. The probe processing method according to claim 1, wherein the portion to be processed of the probe comprises a tip of the probe.
3. The probe processing method according to claim 1, wherein before the covering of the photosensitive film, the method further comprises: the probe and the copper sheet are integrally connected through the connecting ribs.
4. The probe processing method according to claim 3, wherein the covering photosensitive film comprises: and covering a photosensitive film on the whole copper sheet.
5. The method for processing a probe according to claim 3, wherein after plating the portion of the probe after development with a rhodium plating solution, the method further comprises: the solution is used to remove the dry film in the unexposed areas.
6. The probe processing method according to claim 5, wherein the solution includes a photosensitive film cleaning solution.
7. The probe processing method according to claim 5, wherein after removing the dry film of the unexposed area using a solution, the method further comprises: and cutting off the connecting ribs on the copper sheet to obtain the rhodium-plated probe.
8. The probe treatment method according to claim 1 or 2, wherein the plating thickness of the portion to be treated of the probe is 1 to 1.5 um.
9. The method for processing a probe according to claim 1, wherein the plating the portion of the probe after the development with the rhodium plating solution comprises: chemical degreasing, electrolytic degreasing, pure water cleaning, immersing in dilute sulfuric acid with the mass fraction of 5%, distilled water cleaning, current and voltage regulation and rhodium plating.
10. A probe treated by the method of any one of claims 1 to 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210885060.0A CN115029747A (en) | 2022-07-26 | 2022-07-26 | Probe processing method and probe |
| PCT/CN2022/113290 WO2024021198A1 (en) | 2022-07-26 | 2022-08-18 | Probe treatment method and probe |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210885060.0A CN115029747A (en) | 2022-07-26 | 2022-07-26 | Probe processing method and probe |
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| CN115029747A true CN115029747A (en) | 2022-09-09 |
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| CN202210885060.0A Pending CN115029747A (en) | 2022-07-26 | 2022-07-26 | Probe processing method and probe |
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| WO (1) | WO2024021198A1 (en) |
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| WO2024021198A1 (en) | 2024-02-01 |
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