CN115011348A - Aluminum nitride etching solution and application thereof - Google Patents

Aluminum nitride etching solution and application thereof Download PDF

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CN115011348A
CN115011348A CN202210758826.9A CN202210758826A CN115011348A CN 115011348 A CN115011348 A CN 115011348A CN 202210758826 A CN202210758826 A CN 202210758826A CN 115011348 A CN115011348 A CN 115011348A
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aluminum nitride
etching
etching solution
water
additive
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CN115011348B (en
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冯帆
贺兆波
叶瑞
姜飞
张庭
班昌胜
冯凯
王书萍
杜程
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Hubei Sinophorus Electronic Materials Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

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Abstract

The invention provides an aluminum nitride etching solution and application thereof, wherein the etching solution comprises the following alkaline substances in percentage by mass: 10-20% of additive and 0.1-0.8% of additive; 0.01-0.05% of surfactant and the balance of water. Wherein, the water and the alkaline substance provide the necessary basic alkaline environment of the etching solution, the additive provides the oxidation performance necessary for etching and the function of promoting the hydrolysis of the aluminum nitride, the surfactant optimizes the etching condition, and the aluminum nitride can be effectively etched away under the same etching time. The etching solution has simple production process, low cost of raw materials and stable performance, is beneficial to industrial large-scale production, and can accelerate the etching rate and improve the production efficiency of semiconductor finished products.

Description

Aluminum nitride etching solution and application thereof
Technical Field
The invention belongs to the field of electronic chemicals, and relates to an etching solution, in particular to an aluminum nitride etching solution and application thereof.
Background
Aluminum nitride is a wide bandgap semiconductor material having excellent dielectric properties and piezoelectric properties, and is an important electronic material in the semiconductor field. In the wet etching process for removing the aluminum nitride layer, an aqueous solution of potassium hydroxide is often used. Aqueous solutions of potassium hydroxide alone have some unavoidable disadvantages, such as: the aluminum nitride layer is difficult to etch by a single potassium hydroxide aqueous solution on certain crystal faces, and the aluminum nitride is also difficult to etch by alloying with a substrate material when the aluminum nitride layer is prepared.
At present, no efficient solution is available for generating the taper-shaped residue which is difficult to be etched in the aluminum nitride etching process, and if excessive residue is generated in a material layer in the semiconductor device manufacturing process, the overall product yield is reduced.
In order to solve the above problems, it is necessary to add other additives to the aqueous solution of potassium hydroxide to help the aqueous solution of potassium hydroxide to improve the etching capability, thereby effectively solving the problem of tapered residue.
Disclosure of Invention
The invention provides an aluminum nitride etching solution and application thereof, which can efficiently remove conical needle-shaped residues of aluminum nitride.
The technical scheme of the invention is that the aluminum nitride etching solution comprises, by mass, 10-20% of an alkaline substance, 0.1-0.8% of an additive, 0.01-0.05% of a surfactant and the balance of water.
Further, the alkaline substance is one or more of potassium hydroxide and sodium hydroxide.
Further, the alkaline substance also comprises one or two of ethylenediamine and tetramethylammonium hydroxide, and the addition amount of the alkaline substance accounts for 0.01-0.1% of the total etching solution.
Further, the additive is one or a combination of more of ammonium citrate, ammonium acetate, triammonium citrate, triethanolamine, N' -dicyclohexylcarbodiimide and polyacrylamide.
Further, the surfactant is one or a combination of more of 2-undecylimidazoline, fatty alcohol-polyoxyethylene ether sodium sulfate, polyethylene glycol, sodium benzenesulfonate and alkyl sulfonate.
Further, the water is one or more of deionized water, distilled water, pure water, or ultrapure water.
The invention also relates to the application of the aluminum nitride etching solution in etching an aluminum nitride layer.
The invention also relates to application of the aluminum nitride etching solution in etching aluminum nitride layers on composite substrate layers made of different materials, wherein the aluminum nitride etching solution comprises 12-15% of alkaline substances, 0.5-0.8% of additives, 0.01-0.05% of surfactants and the balance of water.
The invention also relates to the application of the aluminum nitride etching solution in etching the aluminum nitride layer on the silicon semiconductor substrate layer, which comprises the following alkaline substances: 16-18% of additive and 0.2-0.6% of additive; 0.01-0.05% of surfactant and the balance of water; the etching solution is used for etching the aluminum nitride layer on the silicon semiconductor substrate layer.
Further, the specific method is to adopt etching solution to soak or spray the sample to be etched, and then clean and dry the sample.
The invention has the following beneficial effects:
1. in the alkaline substance, the strong alkaline hydroxide is taken as the main ingredient, and the organic base is added as the auxiliary alkaline substance, so that the alkalinity of the solution can be enhanced, and the anisotropy of the alkali etching can be weakened, thereby reducing the quantity of the conical needle-shaped residues of the aluminum nitride to a certain extent.
2. The alkaline etching of aluminum nitride is carried out in two steps, firstly, hydrolysis is carried out to generate aluminum oxide and ammonia monohydrate, and then the aluminum oxide and hydroxyl react to generate the metathlorate. The additive can be used as a chelating agent to chelate a part of aluminum, so that the forward progress of the hydrolysis reaction is promoted, and the etching rate of the alkaline etching solution on the aluminum nitride is improved.
3. The long-chain alkyl surfactant contained in the etching solution improves the properties of the solution such as surface tension and the like, reduces the contact angle between the solution and the etched layer and increases the etching effect.
4. The etching solution provided by the invention can effectively solve the problem of tapered residue, and can better optimize the etching effect in the same time.
Drawings
FIG. 1 is a graph showing the etching effect of aluminum nitride in comparative example 1;
FIG. 2 is a cross-sectional view of the residue after etching;
FIG. 3 is a graph showing the etching effect of aluminum nitride in comparative example 2;
FIG. 4 is a graph showing the etching effect of the aluminum nitride layer according to example 1;
FIG. 5 is a graph showing the etching effect of the aluminum nitride layer according to example 2;
FIG. 6 shows the effect of etching aluminum nitride in accordance with example 3;
FIG. 7 shows the effect of etching aluminum nitride in accordance with example 4;
FIG. 8 is a graph showing the etching effect of the aluminum nitride layer according to example 5;
FIG. 9 shows the effect of etching aluminum nitride layer according to example 6;
FIG. 10 shows the effect of etching aluminum nitride according to example 7;
FIG. 11 is a graph showing the effect of etching aluminum nitride according to example 8;
FIG. 12 is a diagram showing the effect of the etching solution on the surface etching of tungsten according to example 3;
FIG. 13 is a diagram illustrating the effect of etching the tungsten surface by the etching solution described in example 4.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to examples, but those skilled in the art will appreciate that the following examples are only illustrative of the present invention and should not be construed as limiting the scope of the present invention.
Comparative example 1
The aluminum nitride etching liquid consists of potassium hydroxide 12 wt%, polyglycol 400 0.05 wt% and water for the rest.
According toThe aluminum nitride single chip experiment of etching silicon substrate at 60 ℃ after the mixed etching solution is prepared. Firstly, cutting a single piece into 2 x 2cm, putting the cut single piece in low-concentration alkali liquor for cleaning for 10s in order to remove an oxide layer on the surface, cleaning with deionized water, measuring an aluminum nitride sheet by using an ellipsometer, calculating to obtain the initial thickness of the aluminum nitride through model fitting, and measuring 4 points on the single piece to obtain an average value. Then placing the aluminum nitride sheet into etching solution to be etched for 10s, cleaning and drying by using nitrogen, testing the aluminum nitride spectrum by using an ellipsometer (keeping the testing point consistent with that before etching), fitting and calculating, and taking an average value to obtain the thickness of the aluminum nitride, and calculating to obtain the etching rate of the aluminum nitride sheet, wherein the etching rate of the aluminum nitride in the etching solution with the proportion is
Figure BDA0003723590260000033
In order to research the influence of the etching solution on the residue, the duration of etching the aluminum nitride sheet in the etching solution is prolonged to 1min, the aluminum nitride sheet is taken out and cleaned by deionized water, and the aluminum nitride sheet is dried by nitrogen; then, the number of the tapered needle-like residues on the surface of the silicon substrate was observed in a Scanning Electron Microscope (SEM), as shown in fig. 1, and the number of the residues on the aluminum nitride sheet was 548 residual points, and as can be seen from the cross-sectional view of fig. 2, the shape of the residues was tapered needle-like.
Comparative example 2
The aluminum nitride etching liquid consists of potassium hydroxide 16 wt%, polyglycol 400 0.05 wt% and water for the rest.
An etching experiment was performed on an aluminum nitride single wafer on a silicon substrate at 60 ℃ in the manner of comparative example 1 to obtain an aluminum nitride etching rate of
Figure BDA0003723590260000031
Then, the surface residue was observed by SEM, and as shown in FIG. 3, the number of residues on the aluminum nitride sheet was counted as 139 residues.
Example 1
An aluminium nitride etching liquid contains potassium hydroxide as basic substance (12%), triethanolamine (0.2%), polyethanediol (0.05%) and water (rest).
An etching experiment was performed on an aluminum nitride single wafer on a silicon substrate at 60 ℃ in the manner of comparative example 1 to obtain an aluminum nitride etching rate of
Figure BDA0003723590260000032
Then, the surface residue was observed by SEM, and as shown in fig. 4, the number of residues on the aluminum nitride sheet was counted as 62 residues.
Example 2
The aluminum nitride etching liquid consists of potassium hydroxide 12 wt%, triethanolamine 0.5 wt%, polyglycol 400 0.05 wt% and water for the rest.
An etching experiment was performed on an aluminum nitride single wafer on a silicon substrate at 60 ℃ in the manner of comparative example 1 to obtain an aluminum nitride etching rate of
Figure BDA0003723590260000041
Then, the surface residue was observed by SEM, and the number of residues on the aluminum nitride sheet was counted as 43 residues, as shown in FIG. 5.
Example 3
The aluminum nitride etching liquid consists of potassium hydroxide 12 wt%, triethanolamine 0.8 wt%, polyglycol 400 0.05 wt% and water for the rest.
An etching experiment was performed on an aluminum nitride single wafer on a silicon substrate at 60 ℃ in the manner of comparative example 1 to obtain an aluminum nitride etching rate of
Figure BDA0003723590260000044
Then, the surface residue was observed by SEM, and as shown in fig. 6, the number of residues on the aluminum nitride sheet was counted as 6 residues.
Example 4
The aluminum nitride etching liquid consists of potassium hydroxide 16 wt%, triethanolamine 0.5 wt%, polyglycol 400 0.05 wt% and water for the rest.
An etching experiment was performed on an aluminum nitride single wafer on a silicon substrate at 60 ℃ in the manner of comparative example 1 to obtain an aluminum nitride etching rate of
Figure BDA0003723590260000042
Then, the surface residue was observed by SEM, and as shown in FIG. 7, the number of residues on the aluminum nitride sheet was counted as 4 residues.
An excessively strong basicity has an etching effect on the metal layer and is typically used for etching scandium-doped aluminum nitride layers on the non-metal layer. Etching the surface of the tungsten metal at 60 ℃ for the same time by using the etching solutions of example 3 and example 4 according to the method of comparative example 1, wherein the surface of the tungsten metal is structurally complete after etching by using the etching solution of example 3, as shown in FIG. 12; and a loose and porous structure is formed on the surface of the tungsten metal after the etching solution in the embodiment 4 is adopted for etching, as shown in FIG. 13.
Example 5
The aluminum nitride etching liquid consists of sodium hydroxide 12 wt%, triethanolamine 0.8 wt%, polyglycol 400 0.05 wt% and water for the rest.
An etching experiment was performed on an aluminum nitride single wafer on a silicon substrate at 60 ℃ in the manner of comparative example 1 to obtain an aluminum nitride etching rate of
Figure BDA0003723590260000043
Then, the surface residue was observed by SEM, and as shown in fig. 8, the number of residues on the aluminum nitride sheet was counted as 7 residues.
Example 6
The aluminum nitride etching liquid consists of potassium hydroxide 12 wt%, ammonium citrate 0.8 wt%, polyglycol 400 0.05 wt% and water for the rest.
An etching experiment was performed on an aluminum nitride single wafer on a silicon substrate at 60 ℃ in the manner of comparative example 1 to obtain an aluminum nitride etching rate of
Figure BDA0003723590260000051
Then, the surface residue was observed by SEM, and as shown in fig. 9, the number of residues on the aluminum nitride sheet was counted as 12 residues.
Example 7
The aluminum nitride etching liquid consists of potassium hydroxide 12 wt%, additive ammonium citrate 0.8 wt%, polyglycol 400 0.05 wt% and water for the rest.
An etching experiment was performed on an aluminum nitride single wafer on a silicon substrate at 60 ℃ in the manner of comparative example 1 to obtain an aluminum nitride etching rate of
Figure BDA0003723590260000054
Then, the surface residue was observed by SEM, and as shown in fig. 10, the number of residues on the aluminum nitride sheet was counted as 8 residues.
Example 8
The aluminum nitride etching liquid consists of potassium hydroxide 12 wt%, ammonium acetate 0.4 wt%, triethanolamine 0.4 wt%, polyglycol 400 0.05 wt% and water for the rest.
An etching experiment was performed on an aluminum nitride single wafer on a silicon substrate at 60 ℃ in the manner of comparative example 1 to obtain an aluminum nitride etching rate of
Figure BDA0003723590260000052
Then, the surface residue was observed by SEM, and as shown in FIG. 11, the number of residues on the aluminum nitride sheet was counted as 6 residues.
As shown in Table 1, the etching data and the residual amount of comparative examples 1-2 and examples 1-8, comparative example 1 is a blank control, the etching rate of aluminum nitride is low, and the surface residual amount is large. Comparative example 2 has an increased alkali concentration, an increased etching rate, and a reduced amount of residue as compared with comparative example 1, but does not effectively solve the residue. In examples 1-3, triethanolamine was added in an amount based on comparative example 1, the etching rate of aluminum nitride was effectively increased, and the ratio in example 3 reduced the surface residue of aluminum nitride by 98.9%. In example 4, compared with comparative example 2, a certain amount of triethanolamine is added, so that the etching rate of aluminum nitride is effectively improved, and the efficiency of reducing the surface residue of aluminum nitride reaches 97.1%. Example 5 changed the type of alkali from example 3, and the aluminum nitride etching effect did not differ greatly. Examples 6-8 were analogized to one or more of the three same type additives to achieve similar etching results as example 3.
TABLE 1 data and residual amounts of etching experiments carried out in comparative examples 1 and 2 and examples 1 to 4
Figure BDA0003723590260000053
Figure BDA0003723590260000061
The above-described embodiments are merely preferred embodiments of the present invention, and should not be construed as limiting the present invention, and features in the embodiments and examples in the present application may be arbitrarily combined with each other without conflict. The scope of the present invention is defined by the claims, and is intended to include equivalents of the features of the claims. I.e., equivalent alterations and modifications within the scope hereof, are also intended to be within the scope of the invention.

Claims (10)

1. An aluminum nitride etching solution is characterized by comprising the following alkaline substances in percentage by mass: 10-20% of organic ammonium or organic amine additive, 0.1-0.8%; 0.01-0.05% of surfactant and the balance of water.
2. The aluminum nitride etching solution according to claim 1, wherein: the alkaline substance is potassium hydroxide and/or sodium hydroxide.
3. The aluminum nitride etching solution according to claim 2, wherein: the alkaline substance also comprises one or two of ethylenediamine and tetramethyl ammonium hydroxide, and the addition amount of the alkaline substance accounts for 0.01-0.1% of the total etching solution.
4. The aluminum nitride etching solution according to claim 1, wherein: the additive is one or a combination of more of ammonium citrate, ammonium acetate, triammonium citrate, triethanolamine, N' -dicyclohexylcarbodiimide and polyacrylamide.
5. The aluminum nitride etching solution according to claim 1, wherein: the surfactant is one or a combination of more of 2-undecylimidazoline, fatty alcohol-polyoxyethylene ether sodium sulfate, polyethylene glycol, sodium benzene sulfonate and alkyl sulfonate.
6. The aluminum nitride etching solution according to claim 1, wherein: the water is one or more of deionized water, distilled water, pure water or ultrapure water.
7. Use of the aluminum nitride etching solution according to any one of claims 1 to 6 for etching an aluminum nitride layer.
8. Use of the aluminum nitride etching solution of any one of claims 1 to 6 for etching an aluminum nitride layer on a composite substrate layer of a different material, characterized in that: comprises alkaline substances: 12-15% of additive and 0.5-0.8% of additive; 0.01-0.05% of surfactant and the balance of water.
9. Use of the aluminum nitride etching solution according to any one of claims 1 to 6 for etching an aluminum nitride layer on a silicon semiconductor substrate layer, characterized in that: comprises alkaline substances: 16-18% of additive and 0.2-0.6% of additive; 0.01-0.05% of surfactant and the balance of water; the etching solution is used for etching the aluminum nitride layer on the silicon semiconductor substrate layer.
10. Use according to any one of claims 7 to 9, wherein: the specific method is that the sample to be etched is soaked or sprayed with etching solution, and then is cleaned and dried.
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CN114107989A (en) * 2020-08-31 2022-03-01 深圳新宙邦科技股份有限公司 Etching solution for copper-containing metal film
CN113308684A (en) * 2021-05-20 2021-08-27 广东利尔化学有限公司 Intelligent preparation method of chemical-immersion thin-plating solution applied to circuit board hole metallization
CN113621375A (en) * 2021-07-30 2021-11-09 深圳市科玺化工有限公司 Quartz wafer etching additive and preparation method thereof

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