CN114975644A - Selective emitter solar cell electrode and solar cell comprising same - Google Patents
Selective emitter solar cell electrode and solar cell comprising same Download PDFInfo
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- CN114975644A CN114975644A CN202110211708.1A CN202110211708A CN114975644A CN 114975644 A CN114975644 A CN 114975644A CN 202110211708 A CN202110211708 A CN 202110211708A CN 114975644 A CN114975644 A CN 114975644A
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- solar cell
- oxide
- glass frit
- selective emitter
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
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- Sustainable Development (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a selective emitter solar cell electrode and a selective emitter solar cell comprising the same, wherein the selective emitter solar cell electrode comprises conductive powder and glass frit, and the glass frit comprises: 15 to 40 mole percent lead (Pb) oxide; 0.1 to 40 mole percent tellurium (Te) oxide; 0.1 to 3 mole percent tungsten (W) oxide; and 0.1 mol% or more and less than 25 mol% of silicon (Si) oxide, and the total mole number of the lead (Pb) oxide, the tellurium (Te) oxide and the silicon (Si) oxide is 75 mol% or less.
Description
Technical Field
The invention relates to a selective emitter solar cell electrode and a selective emitter solar cell comprising the same. More particularly, the present invention relates to a selective emitter solar cell electrode having excellent conversion efficiency by minimizing damage due to p-n junction, and a selective emitter solar cell including the same.
Background
The silicon solar cell is composed of a substrate including a p-type silicon semiconductor and an emitter layer including an n-type silicon semiconductor, and a p-n junction is formed between the p-type substrate and the n-type emitter layer. If sunlight is incident on the solar cell having the above structure, electrons are generated as a plurality of carriers on the emitter layer including the n-type silicon semiconductor and holes are generated as a plurality of carriers on the substrate including the p-type silicon semiconductor by means of the photovoltaic effect. Electrons and holes generated by the photovoltaic effect move to the front and rear electrodes joined to the upper portion of the emitter layer and the lower portion of the substrate, respectively, and if these electrodes are connected with a wire, a current flows.
For solar cells of this structure, the efficiency of the solar cell is influenced by the concentration of the dopant (dopant) doped to the emitter. For example, when the concentration of the dopant doped in the emitter is low, that is, when the emitter is formed of a low-concentration doped portion, the effect of increasing the short-circuit current density and the open-circuit voltage by reducing recombination of electrons and holes is obtained, but there is a disadvantage that the contact resistance is increased and the Fill Factor (FF) is reduced. On the contrary, when the concentration of the doped dopant is high, that is, when the emitter is formed of the high concentration doped portion, the effect of increasing the fill factor by reducing the contact resistance can be obtained, but there is a disadvantage of reducing the short-circuit current density and the open-circuit voltage.
Therefore, conventionally, when an emitter layer of a solar cell is formed, only a portion where an electrode is formed is selectively doped with a high concentration on an emitter doped with a low concentration, and thus a solar cell having a structure in which both advantages of a low-concentration doped portion and a high-concentration doped portion can be obtained, for example, a solar cell having a selective emitter structure (hereinafter, a selective emitter solar cell) has been developed.
Disclosure of Invention
The present invention aims to provide a selective emitter solar cell electrode suitable for a selective emitter solar cell.
Another object of the present invention is to provide a selective emitter solar cell electrode having excellent conversion efficiency by minimizing damage due to p-n junction.
It is still another object of the present invention to provide a solar cell including the above selective emitter solar cell electrode.
1. According to an embodiment, a selective emitter solar cell electrode is provided. The electrode includes conductive powder and glass frit,
the glass frit comprises:
15 to 40 mole percent lead (Pb) oxide;
0.1 to 40 mole percent tellurium (Te) oxide;
0.1 to 3 mole percent tungsten (W) oxide; and
0.1 mol% or more and less than 25 mol% of a silicon (Si) oxide,
the total mole number of the lead (Pb) oxide, the tellurium (Te) oxide, and the silicon (Si) oxide may be 75 mole percent or less.
2. In the above 1, the glass frit may further include 1 or more elements selected from bismuth (Bi), lithium (Li), phosphorus (P), germanium (Ge), gallium (Ga), cerium (Ce), iron (Fe), zinc (Zn), magnesium (Mg), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese (Mn), boron (B), and aluminum (Al).
3. In the above 1 or 2, the glass frit may further include 1 to 20 mol% of bismuth (Bi) oxide.
4. In any one of the above 1 to 3, the glass frit may further include lithium (Li) oxide in an amount of 1 to 20 mol%.
5. In any one of the above 1 to 4, the glass frit may further include 0.1 to 10 mol% of magnesium (Mg) oxide.
6. In any one of the above 1 to 5, the glass frit may further include 0.1 mol% to 10 mol% of zinc (Zn) oxide.
7. In any one of the above 1 to 6, the above glass frit may further include 0.1 to 5 mol% of sodium (Na) oxide.
8. In any one of the above 1 to 7, the glass frit may further include 0.1 mol% to 5 mol% of boron (B) oxide.
9. In any one of the above items 1 to 8, the electrode may be formed of a composition containing the conductive powder, the glass frit, and an organic vehicle.
10. In the above 9, the above composition may comprise:
60 to 95 weight percent of the above conductive powder;
0.1 to 20 weight percent of the glass frit; and
1 to 30 weight percent of the above organic vehicle.
11. In the above 9 or 10, the composition may further comprise 1 or more of a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, an antifoaming agent, a pigment, an ultraviolet stabilizer, an antioxidant, and a coupling agent.
12. According to another embodiment, a selective emitter solar cell is disclosed. The selective emitter solar cell includes:
a substrate doped with a first conductive type dopant;
a selective emitter layer formed on the front surface of the substrate and including a high-concentration doped portion and a low-concentration doped portion doped with a second conductive type dopant;
a first electrode formed on the high-concentration doped portion; and
a second electrode formed on the rear surface of the substrate,
the first electrode may be any one of the electrodes 1 to 11.
The present invention has an effect of providing a selective emitter solar cell electrode and a selective emitter solar cell including the same, which can minimize damage due to p-n junction and have excellent conversion efficiency.
Drawings
Fig. 1 schematically shows the structure of a selective emitter solar cell according to an example of the present invention.
Detailed Description
In the present specification, the singular expressions include plural expressions unless the context clearly indicates otherwise.
The terms including or having in the present specification mean the presence of the features or structural elements described in the specification, and do not preclude the possibility of adding one or more other features or structural elements.
The terms first, second, etc. used in the present specification may be used to describe various structural elements, but the structural elements are not limited by the terms. The terminology is used for the purpose of distinguishing one structural element from other structural elements only.
"to" in "a to b" indicating a numerical range in the present specification is defined as ≧ a and ≦ b.
Selective emitter solar cell electrode
According to one embodiment, a selective emitter solar cell electrode includes a conductive powder and a glass frit, the glass frit comprising: 15 to 40 mole percent lead (Pb) oxide; 0.1 to 40 mole percent tellurium (Te) oxide; 0.1 to 3 mole percent tungsten (W) oxide; and 0.1 mol% or more and less than 25 mol% of silicon (Si) oxide, and the total mole number of the lead (Pb) oxide, the tellurium (Te) oxide and the silicon (Si) oxide may be 75 mol% or less. In this case, damage due to p-n junction can be minimized, and conversion efficiency can be improved with excellent open circuit voltage, series resistance, and/or fill factor.
The electrodes may be formed from a selective emitter solar cell electrode composition that may include a conductive powder, a glass frit, and an organic vehicle.
Conductive powder
The conductive powder may include, for example, one or more metal powders of silver (Ag), gold (Au), platinum (Pt), palladium (Pd), aluminum (Al), and nickel (Ni), but is not limited thereto. According to an example, the conductive powder may include silver powder.
The particle shape of the conductive powder is not particularly limited, and particles having various shapes, for example, spherical, plate-like, or amorphous particles can be used.
The conductive powder may be a powder having a particle diameter of a nano size or a micro size, and for example, may be a conductive powder of a several tens or hundreds of nano sizes or a conductive powder of a several to several tens of micrometers sizes. In addition, as the conductive powder, 2 or more conductive powders with different sizes may be mixed and used.
Conducting electricityAverage particle diameter (D) of the powder 50 ) May be 0.1 μm to 10 μm, and may be, for example, 0.5 μm to 5 μm. Within the above range, the contact resistance and the series resistance may be reduced. The conductive powder was ultrasonically dispersed in isopropyl alcohol (IPA) at 25 ℃ for 3 minutes, and then the average particle diameter (D) was measured using 1064LD model manufactured by CILAS corporation 50 )。
The amount of the conductive powder used is not particularly limited, and for example, the conductive powder may be included in an amount of 60 to 95 weight percent with respect to the total weight of the composition for forming a selective emitter solar cell electrode. Within the above range, the conversion efficiency of the solar cell is excellent, and the paste can be smoothly pasted. According to an example, the conductive powder may be included by 70 to 95 weight percent, and according to another example, the conductive powder may be included by 80 to 95 weight percent, with respect to the total weight of the composition for forming a selective emitter solar cell electrode.
Glass frit
The glass frit is used to etch (etching) the anti-reflection film in a firing process of the composition for forming the selective emitter solar cell electrode, and to melt the conductive powder to generate crystalline particles of the conductive powder in the emitter region. The glass frit improves the adhesion between the conductive powder and the wafer, and softens during sintering to induce an effect of further lowering the sintering temperature.
The glass frit comprises 15 to 40 mole percent lead (Pb) oxide, based on the total moles of glass frit; 0.1 to 40 mole percent tellurium (Te) oxide; 0.1 to 3 mole percent tungsten (W) oxide; and 0.1 mol% or more and less than 25 mol% of silicon (Si) oxide, and the total mole number of the lead (Pb) oxide, the tellurium (Te) oxide and the silicon (Si) oxide may be 75 mol% or less. In this case, damage due to p-n junction can be minimized, and conversion efficiency can be improved with excellent open circuit voltage, series resistance, and/or fill factor.
For example, the glass frit may include 20 mol% to 40 mol% of lead (Pb) oxide based on the total moles of the glass frit, and may include 30 mol% to 40 mol% as another example, but is not limited thereto.
For example, the glass frit may include 5 mol% to 40 mol% of tellurium (Te) oxide based on the total moles of the glass frit, and may include 10 mol% to 40 mol% as another example, but is not limited thereto.
For example, the glass frit may include 0.5 mol% to 3 mol% of tungsten (W) oxide based on the total moles of the glass frit, and may include 1 mol% to 3 mol% as another example, but is not limited thereto.
For example, the glass frit may include silicon (Si) oxide in an amount of 1 mol% to 20 mol% based on the total moles of the glass frit, and may include silicon (Si) oxide in an amount of 5 mol% to 20 mol% based on the total moles of the glass frit.
For example, the glass frit may include 50 mol% to 75 mol% of lead (Pb) oxide, tellurium (Te) oxide, and silicon (Si) oxide, based on the total number of moles of the glass frit, and may include 55 mol% to 75 mol%, and may include 60 mol% to 75 mol%, in another example, but is not limited thereto.
According to an example, the glass frit may further include 1 or more elements of bismuth (Bi), lithium (Li), phosphorus (P), germanium (Ge), gallium (Ga), cerium (Ce), iron (Fe), zinc (Zn), magnesium (Mg), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese (Mn), boron (B), and aluminum (Al).
For example, the glass frit may further include 1 to 20 mol% of bismuth (Bi) oxide, based on the total moles of the glass frit. In this case, there can be an effect of reducing contact resistance and increasing adhesive strength. According to an example, the glass frit may include 5 to 20 mol% of bismuth (Bi) oxide, and according to another example, may include 10 to 20 mol%, but is not limited thereto.
For another example, the glass frit may further include 1 mol% to 20 mol% of lithium (Li) oxide, based on the total moles of the glass frit. In this case, the open circuit voltage improvement effect can be obtained. According to an example, the glass frit may include 5 to 20 mol% of lithium (Li) oxide, according to another example, 5 to 15 mol%, according to yet another example, 10 to 15 mol%, but is not limited thereto.
For another example, the glass frit may further include 0.1 mol% to 10 mol% of magnesium (Mg) oxide, based on the total moles of the glass frit. In this case, there can be an effect of improving contact resistance as well as increasing adhesive strength. According to an example, the glass frit may include 1 to 10 mol% of magnesium (Mg) oxide, according to another example, 2 to 10 mol%, according to yet another example, 5 to 10 mol%, but is not limited thereto.
For another example, the glass frit may further include 0.1 mol% to 10 mol% of zinc (Zn) oxide, based on the total moles of the glass frit. In this case, the contact resistance improving effect can be obtained. According to an example, the glass frit may include 1 to 10 mol% of zinc (Zn) oxide, according to another example, 2 to 10 mol%, according to yet another example, 5 to 10 mol%, but is not limited thereto.
For another example, the glass frit may further include 0.1 mol% to 5 mol% of sodium (Na) oxide, based on the total moles of the glass frit. In this case, the contact resistance and Fill Factor (FF) improvement effect can be obtained. According to an example, the glass frit may include 0.5 to 5 mol% of sodium (Na) oxide, according to another example, 1 to 5 mol%, according to yet another example, 2 to 5 mol%, but is not limited thereto.
For another example, the glass frit may further include 0.1 mol% to 5 mol% of boron (B) oxide, based on the total moles of the glass frit. In this case, the contact resistance and FF improvement effect can be obtained. According to an example, the glass frit may include 0.5 to 5 mol% of boron (B) oxide, according to another example, 1 to 5 mol%, according to yet another example, 2 to 5 mol%, but is not limited thereto.
The shape, size, etc. of the glass frit are not particularly limited. For example, the shape of the glass frit may be spherical or amorphous, and the average particle size (D) of the glass frit 50 ) May be 0.1 μm to 10 μm. The average particle size (D) can be measured using 1064LD model manufactured by CILAS corporation after 3 minutes of ultrasonic dispersion of the glass frit in isopropanol at 25 ℃ 50 )。
The glass frit may be prepared from the above-mentioned elements and/or oxides of the elements using a conventional method. For example, the above-mentioned elements and/or oxides of the elements are mixed by a ball mill (ball mill) or a planetary mill (planetary mill), the mixed composition is melted at 800 to 1300 ℃, quenched (quenching) at 25 ℃, and the resultant is pulverized by a disk mill (disk mill), planetary mill, or the like.
The amount of the glass frit used is not particularly limited, and for example, the glass frit may be included in an amount of 0.1 to 20 weight percent with respect to the total weight of the composition for forming a selective emitter solar cell electrode. Within the above range, damage due to p-n junction can be minimized, conversion efficiency can be made excellent with excellent open circuit voltage, series resistance and/or fill factor. According to an example, the glass frit may be included in an amount of 0.5 to 10 weight percent, and according to another example, may be included in an amount of 0.1 to 5 weight percent, with respect to the total weight of the composition for forming a selective emitter solar cell electrode.
Organic vehicle
The organic vehicle is mechanically mixed with the inorganic components of the composition for forming a selective emitter solar cell electrode, thereby imparting viscosity and rheological properties suitable for printing to the composition.
The organic vehicle may be generally the one used in the composition for forming the solar cell electrode, and may include a binder resin, a solvent, and the like.
As the binder resin, acrylic ester or cellulose resin can be used. For example, ethyl cellulose may be used as the binder resin. As another example, ethyl hydroxyethyl cellulose, cellulose nitrate, a mixture of ethyl cellulose and a phenol resin, an alkyd resin, a phenol resin, an acrylate resin, a xylene resin, a polybutene resin, a polyester resin, a urea resin, a melamine resin, a vinyl acetate resin, wood rosin (rosin), or an alcohol-based polymethyl acrylate can be used as the binder resin.
Examples of the solvent include hexane, toluene, ethyl cellosolve, cyclohexanone, butyl cellosolve, butyl carbitol (diethylene glycol monobutyl ether), dibutyl carbitol (diethylene glycol dibutyl ether), butyl carbitol acetate (diethylene glycol monobutyl ether acetate), propylene glycol monomethyl ether, hexylene glycol, terpineol (terpineol), methyl ethyl ketone, benzyl alcohol, γ -butyrolactone, ethyl lactate, and 2,2, 4-trimethyl-1, 3-pentanediol monoisobutyrate (e.g., ester alcohol), which may be used alone or in combination.
The amount of the organic vehicle used is not particularly limited, and for example, the organic vehicle may be included in an amount of 1 to 30 weight percent with respect to the total weight of the composition for forming a selective emitter solar cell electrode. Within the above range, sufficient adhesive strength and excellent printability can be ensured. According to an example, the organic vehicle may be included in an amount of 3 to 20 weight percent, and according to another example, may be included in an amount of 1 to 15 weight percent, with respect to the total weight of the composition for forming a selective emitter solar cell electrode.
Additive agent
The composition for forming a selective emitter solar cell electrode may further include 2 or more kinds of dispersing agents, thixotropic agents, plasticizers, viscosity stabilizers, antifoaming agents, pigments, ultraviolet stabilizers, antioxidants, coupling agents, and the like, alone or in combination, as necessary, in addition to the above components, in order to improve flow characteristics, process characteristics, and stability. These components may be included in an amount of 0.1 to 5 weight percent, based on the total weight of the composition for forming a selective emitter solar cell electrode, but the content thereof may be changed as needed.
The selective emitter solar cell electrode can be produced by coating the composition for forming a selective emitter solar cell electrode on a highly doped portion in a selective emitter layer, drying, and firing.
The composition for forming a selective emitter solar cell electrode may be applied by, for example, screen printing, gravure offset printing, rotary screen printing, or a lift-off method, but is not limited thereto.
The composition for forming a selective emitter solar cell electrode may be dried, for example, at about 200 ℃ to about 400 ℃ for about 10 seconds to about 60 seconds, but is not limited thereto.
The firing process may be performed at about 400 c to about 950 c for about 60 seconds to about 210 seconds, for example, but is not limited thereto.
Solar cell
According to another embodiment, a solar cell is provided comprising the above selective emitter solar cell electrode.
The selective emitter solar cell may include: a substrate doped with a first conductive type dopant; a selective emitter layer formed on the front surface of the substrate and including a high-concentration doped portion and a low-concentration doped portion doped with a second conductive type dopant; a first electrode formed on the high-concentration doped portion; and a second electrode formed behind the substrate, wherein the first electrode may be the selective emitter solar cell electrode.
The first conductivity type and the second conductivity type may have different types. For example, the selective emitter layer doped with the second conductive type dopant may be p-type if the substrate doped with the first conductive type dopant is n-type, and may be n-type if the substrate doped with the first conductive type dopant is p-type.
According to an example, the area resistance of the high concentration doped portion in the selective emitter layer is likely to be smaller than the area resistance of the low concentration doped portion. For example, the area resistance of the high-concentration doped portion may be 50 Ω/sq. to 100 Ω/sq.
According to an example, the first electrode may be a front electrode and the second electrode may be a rear electrode. According to an example, the first electrode may be a rear electrode and the first electrode may be a front electrode.
Fig. 1 schematically shows the structure of a selective emitter solar cell 100 according to an example of the present invention.
Referring to fig. 1, the selective emitter solar cell 100 may include a p-type (or n-type) substrate 11, an n-type (or p-type) selective emitter layer 12, a rear electrode 21, and a front electrode 23. The selective emitter layer 12 may include a low concentration doping portion 12a and a high concentration doping portion 12 b.
The selective emitter solar cell 100, for example, may be prepared by printing a composition for forming a selective emitter solar cell electrode in front of the high concentration doping portion 12b in the selective emitter layer 12, drying at about 200 to about 400 ℃ for about 10 to about 60 seconds, performing a preliminary preparation step for the front electrode 23, printing an aluminum paste behind the substrate 10, drying at about 200 to about 400 ℃ for about 10 to about 60 seconds, performing a preliminary preparation step for the rear electrode 21, and firing at about 400 to about 950 ℃ for about 60 to about 210 seconds.
The present invention will be described in further detail below with reference to examples. However, this is mentioned as a preferred example of the present invention, and it should not be construed that the present invention is limited thereto in any sense.
Examples
Example 1
A composition for forming a selective emitter solar cell electrode was prepared by dissolving 2 parts by weight of ethyl cellulose (STD4, Dow chemical) as a binder resin in 6.5 parts by weight of terpene alcohol (Nippon Terpine) as a solvent at 60 ℃ sufficiently, charging 90 parts by weight of spherical silver powder (AG-4-8F, Dowa Hirightch) having an average particle diameter of 2.0 μm and 1.5 parts by weight of glass frit A shown in Table 1 below having an average particle diameter of 2.0 μm, uniformly mixing, and then mixing and dispersing by means of a 3-roll kneader.
A doping paste (Honeywell) containing a group v element P was first doped with a poly 380 mesh at a thickness of 5 μm on one surface of a P-type semiconductor substrate to form an electrode pattern portion, and then heat-treated at 300 ℃ for 5 minutes and dried. Injecting POCl into a diffusion sintering furnace (diffusion furnace) at 850 DEG C 3 And gas, and carrying out second doping on the substrate to prepare the selective emitter layer. After the second doping of the substrate is completed, phosphosilicate glass (PSG) on the surface of the substrate is removed by HF, and then SiN is coated on the surface by PECVD, thereby forming an anti-reflection film. Then, after printing an aluminum paste on the rear surface of the substrate, the substrate was dried at 300 ℃ for 30 seconds to form a rear surface electrode, and the prepared selective emitter solar cell electrode-forming composition was printed on the electrode pattern portion in alignment using a baccini printer (printer), and then dried at 300 ℃ for 30 seconds to form a front surface electrode. The cell (cell) formed through the above process was fired at 640 to 700 ℃ for 45 seconds using a belt firing furnace to prepare a solar cell.
Examples 2 to 8 and comparative examples 1 to 4
When the composition for forming a selective emitter solar cell electrode was prepared, a solar cell sheet was prepared by the same method as in example 1, except that glass frits B to L described in table 1 were used instead of glass frit a.
[ TABLE 1 ]
(unit: mole percent)
Evaluation example: evaluation of electric characteristics
The open-circuit voltage (Voc, unit: mV), the series resistance (Rs, unit: omega), the fill factor (FF, unit:%) and the conversion efficiency (Eff., unit:%) of the solar cell sheets prepared in examples 1 to 8 and comparative examples 1 and 4 were measured using a solar cell efficiency measuring apparatus (Halm, Fortix tech Co.), and the leakage current (Jo2, unit: nA/cm) was measured using a Suns-Voc apparatus (Sinton Co.) 2 ) The results of the prediction of the mobility and diffusion rate of metal ions in the wafer are shown in table 2 below. The lower the measured Jo2 value, the lower the mobility and diffusion rate of the metal ion.
[ TABLE 2 ]
| Glass frit for use | Voc(V) | Rs(ohm) | FF(％) | Eff.(％) | Jo2(nA/cm 2 ) | |
| Example 1 | Glass frit A | 0.6806 | 0.00308 | 78.58 | 21.71 | 7.41 |
| Example 2 | Glass frit B | 0.6796 | 0.00303 | 78.68 | 21.75 | 6.81 |
| Example 3 | Glass frit C | 0.6806 | 0.00312 | 78.43 | 21.68 | 7.82 |
| Example 4 | Glass frit D | 0.6760 | 0.00297 | 78.73 | 21.61 | 6.26 |
| Example 5 | Glass frit E | 0.6809 | 0.0028 | 78.72 | 21.69 | 7.83 |
| Example 6 | Glass frit F | 0.0682 | 0.00287 | 78.83 | 21.76 | 7.85 |
| Example 7 | Glass frit G | 0.0680 | 0.00274 | 78.70 | 21.65 | 7.88 |
| Example 8 | Glass frit H | 0.0681 | 0.00272 | 78.80 | 21.72 | 7.55 |
| Comparative example 1 | Glass frit I | 0.6772 | 0.00315 | 78.40 | 21.51 | 8.03 |
| Comparative example 2 | Glass frit J | 0.6775 | 0.00320 | 78.23 | 21.52 | 8.56 |
| Comparative example 3 | Glass frit K | 0.6770 | 0.00307 | 78.48 | 21.57 | 8.35 |
| Comparative example 4 | Glass frit L | 0.6755 | 0.00299 | 78.51 | 21.54 | 8.74 |
From table 2 above, it can be confirmed that the selective emitter solar cells of examples 1 to 8 having electrodes including the glass frit of the present invention have excellent open circuit voltage, series resistance and/or fill factor, compared to comparative examples 1 to 4 which are not so, and thus it is known that the conversion efficiency is excellent, Jo2 is low, and damage due to p-n junction is small.
Those skilled in the art can easily implement simple modifications or changes of the present invention, and such modifications or changes are considered to be included in the field of the present invention.
Claims (12)
1. A selective emitter solar cell electrode, characterized in that,
comprises a conductive powder and a glass frit,
the glass frit comprises:
15 to 40 mole percent lead (Pb) oxide;
0.1 to 40 mole percent tellurium (Te) oxide;
0.1 to 3 mole percent tungsten (W) oxide; and
0.1 mol% or more and less than 25 mol% of a silicon (Si) oxide,
the total mole number of the lead (Pb) oxide, the tellurium (Te) oxide and the silicon (Si) oxide is 75 mole percent or less.
2. The selective emitter solar cell electrode according to claim 1,
the glass frit further contains 1 or more elements selected from bismuth (Bi), lithium (Li), phosphorus (P), germanium (Ge), gallium (Ga), cerium (Ce), iron (Fe), zinc (Zn), magnesium (Mg), cesium (Cs), strontium (Sr), molybdenum (Mo), titanium (Ti), tin (Sn), indium (In), vanadium (V), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), cobalt (Co), zirconium (Zr), manganese (Mn), boron (B), and aluminum (Al).
3. The selective emitter solar cell electrode according to claim 1, wherein the glass frit further comprises bismuth (Bi) oxide in an amount ranging from 1 mol% to 20 mol%.
4. The selective emitter solar cell electrode according to claim 1, wherein the glass frit further comprises lithium (Li) oxide in an amount ranging from 1 mol% to 20 mol%.
5. The selective emitter solar cell electrode of claim 1, wherein said glass frit further comprises 0.1 to 10 mole percent magnesium (Mg) oxide.
6. The selective emitter solar cell electrode of claim 1, wherein said glass frit further comprises 0.1 to 10 mole percent zinc (Zn) oxide.
7. The selective emitter solar cell electrode of claim 1, wherein said glass frit further comprises 0.1 to 5 mole percent sodium (Na) oxide.
8. The selective emitter solar cell electrode of claim 1, wherein said glass frit further comprises 0.1 to 5 mole percent boron (B) oxide.
9. The selective emitter solar cell electrode of claim 1, wherein said electrode is formed from a composition comprising said conductive powder, said glass frit, and an organic vehicle.
10. The selective emitter solar cell electrode according to claim 9,
the composition comprises:
60 to 95 weight percent of the above conductive powder;
0.1 to 20 weight percent of the glass frit; and
1 to 30 weight percent of the above organic vehicle.
11. The selective emitter solar cell electrode according to claim 9, wherein the composition further comprises at least 1 of a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, an antifoaming agent, a pigment, an ultraviolet stabilizer, an antioxidant, and a coupling agent.
12. A selective emitter solar cell, characterized in that,
the method comprises the following steps:
a substrate doped with a first conductive type dopant;
a selective emitter layer formed on the front surface of the substrate and including a high-concentration doped portion and a low-concentration doped portion doped with a second conductive type dopant;
a first electrode formed on the high-concentration doped portion; and
a second electrode formed on the rear surface of the substrate,
the first electrode described above is an electrode according to any one of claims 1 to 11.
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