CN113450941A - Composition for forming solar cell electrode and solar cell electrode formed therefrom - Google Patents

Composition for forming solar cell electrode and solar cell electrode formed therefrom Download PDF

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CN113450941A
CN113450941A CN202110312398.2A CN202110312398A CN113450941A CN 113450941 A CN113450941 A CN 113450941A CN 202110312398 A CN202110312398 A CN 202110312398A CN 113450941 A CN113450941 A CN 113450941A
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solar cell
composition
mole percent
forming
electrode
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宋大燮
金东奭
李元熙
河贤辰
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Changzhou Fusion New Material Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/122—Silica-free oxide glass compositions containing oxides of As, Sb, Bi, Mo, W, V, Te as glass formers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/14—Silica-free oxide glass compositions containing boron
    • C03C3/142—Silica-free oxide glass compositions containing boron containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/14—Silica-free oxide glass compositions containing boron
    • C03C3/15—Silica-free oxide glass compositions containing boron containing rare earths
    • C03C3/155—Silica-free oxide glass compositions containing boron containing rare earths containing zirconium, titanium, tantalum or niobium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C03C8/12—Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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Abstract

Disclosed is a composition for forming a solar cell electrode, which includes a conductive powder, a glass frit, and an organic vehicle, wherein the glass frit includes one or more of lead and bismuth, lithium, zinc, boron, magnesium, and titanium, and satisfies a predetermined formula.

Description

Composition for forming solar cell electrode and solar cell electrode formed therefrom
Technical Field
The present invention relates to a composition for forming a solar cell electrode and a solar cell electrode formed therefrom, and more particularly, to a composition for forming a solar cell electrode and a solar cell electrode formed therefrom, which are excellent in conversion efficiency and adhesion between a wafer and an electrode.
Background
Solar cells utilize the photoelectric effect of a p-n junction to convert solar photons (photons) into electricity to produce electrical energy. In a solar cell, front and rear electrodes are formed on upper and lower surfaces of a semiconductor wafer or substrate having a p-n junction, respectively. In a solar cell, a photoelectric effect of a p-n junction is caused by sunlight incident on a semiconductor wafer, and a plurality of electrons generated by the photoelectric effect supply a current flowing to the outside through an electrode. The electrode of the solar cell may be formed on the surface of the wafer by coating, patterning and baking the paste composition for electrode.
Recently, the thickness of the emitter (emitter) is continuously reduced to improve the efficiency of the solar cell, thereby inducing a shunt (shading) phenomenon that reduces the performance of the solar cell. Also, increasing the area of the solar cell gradually in order to improve the efficiency of the solar cell increases the contact resistance of the solar cell, thereby decreasing the efficiency of the solar cell.
Therefore, there is a need to develop a paste composition for an electrode, which can minimize damage of a junction of an emitter layer under various sheet resistances and improve conductivity of an interface between a wafer and an electrode, thereby improving contact resistance and series resistance and improving solar cell efficiency.
Disclosure of Invention
Problems to be solved
The purpose of the present invention is to provide a composition for forming a solar cell electrode, which has excellent conversion efficiency and adhesion between a wafer and an electrode.
Another object of the present invention is to provide a solar cell electrode formed of the above composition.
Means for solving the problems
1. According to an embodiment, a composition for forming a solar cell electrode is provided. The composition comprises a conductive powder, a glass frit and an organic vehicle, wherein the glass frit may comprise one or more of lead (Pb) and bismuth (Bi), lithium (Li), zinc (Zn), boron (B), magnesium (Mg) and titanium (Ti), and satisfies the following formulas 1 to 4,
formula 1
0.1≤MZn/MLi≤0.5，
Formula 2
0.001≤MB/MLi≤0.05，
Formula 3
0.1≤MMg/MLi≤1，
Formula 4
0.001≤MTi/MLi≤0.05，
In the above formula, MLiIs the molar percentage of lithium, MZnIs the molar percentage of zinc, MBIs the mole percent of boron, MMgIs the mole percent of magnesium, MTiIs the mole percent of titanium.
2. In the above 1, the glass frit may include: 5 to 30 mole percent of one or more of lead (Pb) and bismuth (Bi); 15 to 25 mole percent lithium (Li); 1 to 10 mole percent zinc (Zn); 0.01 to 3 mole percent boron (B); 1 to 20 mole percent magnesium (Mg); 0.01 to 3 mole percent titanium (Ti).
3. In the above 1 or 2, the glass frit may further include one or more elements selected from tellurium (Te), phosphorus (P), germanium (Ge), gallium (Ga), silver (Ag), cerium (Ce), iron (Fe), silicon (Si), tungsten (W), cesium (Cs), niobium (Nb), strontium (Sr), molybdenum (Mo), tin (Sn), indium (In), vanadium (V), barium (Ba), nickel (Ni), copper (Cu), sodium (Na), potassium (K), arsenic (As), selenium (Se), cobalt (Co), zirconium (Zr), manganese (Mn), copper (Cu), calcium (Ca), aluminum (Al), thallium (Tl), tantalum (Ta), and cerium (Ce).
4. In any one of the above 1 to 3, the above glass frit may further contain 25 mol% to 50 mol% of tellurium (Te).
5. In any one of the above 1 to 4, the above glass frit may further include tungsten (W) in an amount of 5 to 15 mol%.
6. In any one of the above 1 to 5, the composition for forming a solar cell electrode may further include one or more of a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, an anti-foaming agent, a pigment, an ultraviolet stabilizer, an antioxidant, and a coupling agent.
7. In any one of the above 1 to 6, the above composition for forming a solar cell electrode may comprise: 60 to 95 weight percent of the above conductive powder; 0.1 to 20 weight percent of the glass powder; and 1 to 30 weight percent of the organic vehicle.
8. According to another embodiment, a solar cell electrode is provided. The above solar cell electrode may be formed of the composition described in any one of the above 1 to 7.
ADVANTAGEOUS EFFECTS OF INVENTION
The invention has the following effects: provided are a composition for forming a solar cell electrode, which has excellent conversion efficiency and adhesion between a wafer and an electrode, and a solar cell electrode formed therefrom.
Drawings
Fig. 1 schematically shows a solar cell according to an example of the present invention.
Detailed Description
In this specification, the singular expressions include the plural expressions, unless the context clearly dictates otherwise.
In the present specification, the terms "including" or "having" and the like mean that there are the features or structural elements described in the specification, and the possibility of adding one or more other features or structural elements is not previously excluded.
In explaining the components, the components are to be interpreted as including an error range even if not explicitly described.
Unless otherwise stated in the specification, the content of each component of the glass frit is based on the total number of moles of the glass frit and is taken as an oxide conversion basis.
In the present specification, "to" in "a to b" representing a numerical range is defined as ≧ a and ≦ b.
Composition for forming solar cell electrode
According to an example of the present invention, a composition for forming a solar cell electrode may comprise: a conductive powder; a glass frit that contains one or more of lead (Pb) and bismuth (Bi), lithium (Li), zinc (Zn), boron (B), magnesium (Mg), and titanium (Ti), and satisfies the following formulae 1 to 4; and an organic vehicle.
Hereinafter, each component of the composition for forming the solar cell electrode is described in more detail.
Conductive powder
The conductive powder may include, for example, one or more metal powders of silver (Ag), gold (Au), platinum (Pt), palladium (Pd), aluminum (Al), and nickel (Ni), but is not limited thereto. According to an example, the conductive powder may include silver powder.
The particle shape of the conductive powder is not particularly limited, and particles of various shapes, for example, spherical particles, plate-like particles, or amorphous-shaped particles, may be used.
The conductive powder may be a powder having a nano-scale or micro-scale particle size, and for example, may be a conductive powder of a size of tens of nanometers to hundreds of nanometers, or a conductive powder of a size of several micrometers to tens of micrometers. Further, two or more kinds of conductive powders having different sizes may be mixed and used as the conductive powder.
Average particle diameter (D) of conductive powder50) For example, the thickness may be 0.1 μm to 10 μm, and as another example, may be 0.5 μm to 5 μm, and in the above range, the contact resistance and the series resistance may be reduced, but not limited thereto. The average particle diameter (D) may be measured using a 1064LD model manufactured by CILAS Corporation (CILAS) after ultrasonically dispersing conductive powder in isopropyl alcohol (IPA) at a temperature of 25 ℃ for 3 minutes50)。
The amount of the conductive powder used is not particularly limited, but for example, 60 to 95 weight percent (e.g., 70 to 90 weight percent) of the conductive powder may be included based on the total weight of the composition for forming the solar cell electrode. Within the above range, the solar cell has excellent conversion efficiency and can smoothly realize gelatinization.
Glass powder
The glass frit is used to etch (etching) the anti-reflection film in a baking process of the composition for forming the solar cell electrode and to melt the conductive powder to generate grains of the conductive powder in the emitter region. The glass frit has the following effects: the adhesive force between the conductive powder and the wafer is improved, and the conductive powder is softened during sintering to further reduce the baking temperature.
The glass frit may include one or more of lead and bismuth, lithium, zinc, boron, magnesium, and titanium, and satisfy the following formulas 1 to 4,
formula 1
0.1≤MZn/MLi≤0.5，
Formula 2
0.001≤MB/MLi≤0.05，
Formula 3
0.1≤MMg/MLi≤1，
Formula 4
0.001≤MTi/MLi≤0.05，
In the above formula, MLiIs the molar percentage of lithium, MZnIs the molar percentage of zinc, MBIs the mole percent of boron, MMgIs the mole percent of magnesium, MTiIs the mole percent of titanium.
In this case, since the anti-reflection film is properly etched and the adhesion of the conductive powder is increased, the conversion efficiency and the adhesion between the wafer and the electrode can be excellent.
According to an example, MZn/MLiMay be 0.1 to 0.4 (e.g., 0.2 to 0.4), and the above range may have an excellent effect of both the conversion efficiency and the adhesion between the wafer and the electrode, but is not limited thereto.
According to an example, MB/MLiMay be 0.001 to 0.04 (e.g., 0.002 to 0.04), and the above range has excellent conversion efficiency and adhesion between the wafer and the electrode, but is not limited thereto.
According to an example, MMg/MLiMay be 0.2 to 0.8 (e.g., 0.3 to 0.6), and the above range may have an excellent effect of both the conversion efficiency and the adhesion between the wafer and the electrode, but is not limited thereto.
According to an example, MTi/MLiMay be 0.001 to 0.04 (e.g., 0.002 to 0.03), and in the above range, may have a conversion efficiency and a wafer-to-electrode relationshipThe adhesive force of (3) is not limited to this.
According to an embodiment, the glass frit may include 5 mol% to 30 mol% (e.g., 5 mol% to 25 mol%, such as 10 mol% to 25 mol%), and one or more of lead and bismuth, within the above range, the glass frit may have excellent conversion efficiency and adhesion between the wafer and the electrode, but is not limited thereto. In the case where the glass frit contains both lead and bismuth, the molar ratio of lead to bismuth (Pb: Bi) may be 3: 1 to 1: 2 (e.g., 2.5: 1 to 1: 1), in the above range, the conversion efficiency and the adhesion between the wafer and the electrode can be excellent, but the invention is not limited thereto.
According to an example, the glass frit may include 15 mol% to 25 mol% (e.g., 16 mol% to 20 mol%) of lithium, and the conversion efficiency and the adhesion between the wafer and the electrode may be excellent within the above range, but is not limited thereto.
According to an example, the glass frit may include 1 mol% to 10 mol% (e.g., 2 mol% to 8 mol%) of zinc, and the glass frit may have an excellent effect on both the conversion efficiency and the adhesion between the wafer and the electrode within the above range, but is not limited thereto.
According to an example, the glass frit may include 0.01 mol% to 3 mol% (e.g., 0.03 mol% to 1 mol%) of boron, within the above range, which has excellent conversion efficiency and adhesion between the wafer and the electrode, but is not limited thereto.
According to an example, the glass frit may include magnesium in an amount of 1 mol% to 20 mol% (e.g., 5 mol% to 15 mol%), and the glass frit may have excellent conversion efficiency and adhesion between the wafer and the electrode within the above range, but is not limited thereto.
According to an embodiment, the glass frit may include 0.01 mol% to 3 mol% (e.g., 0.03 mol% to 1 mol%) of titanium, and the range may have an excellent effect of both the conversion efficiency and the adhesion between the wafer and the electrode, but is not limited thereto.
According to an example, the glass frit may further include one or more elements selected from tellurium, phosphorus, germanium, gallium, silver, cerium, iron, silicon, tungsten, cesium, niobium, strontium, molybdenum, tin, indium, vanadium, barium, nickel, copper, sodium, potassium, arsenic, selenium, cobalt, zirconium, manganese, copper, calcium, aluminum, thallium, tantalum, and cerium. For example, the glass frit may further include tellurium and/or tungsten, and in this case, it may have an excellent effect of both the conversion efficiency and the adhesion between the wafer and the electrode. In the case where the glass frit further includes tellurium, the content thereof may be, for example, 25 mol% to 50 mol%, and as another example, may be 30 mol% to 40 mol%, and the above range may have an effect of excellent conversion efficiency and adhesion between the wafer and the electrode, but is not limited thereto. In the case where the glass frit further includes tungsten, the content may be, for example, 5 mol% to 15 mol%, and, as another example, may be 8 mol% to 15 mol%, and the above range may have an excellent effect of both the conversion efficiency and the adhesion between the wafer and the electrode, but is not limited thereto.
The shape, size, and the like of the glass frit are not particularly limited. For example, the shape of the glass frit may be spherical or amorphous, and the average particle diameter (D) of the glass frit50) May be 0.1 μm to 10 μm. The average particle diameter (D) may be measured using a 1064LD model manufactured by CILAS corporation (CILAS corporation) after ultrasonically dispersing glass frit in isopropyl alcohol (IPA) at a temperature of 25 ℃ for 3 minutes50)。
The glass frit can be prepared from the above elements and/or oxides of the elements using a conventional method. For example, the glass powder is obtained by mixing the above elements and/or oxides of the elements using a ball mill (ball mill) or a planetary mill (planetary mill), etc., then melting the mixed composition at a temperature of 800 ℃ to 1300 ℃, further quenching (quenching) at a temperature of 25 ℃, and then pulverizing the resultant product using a disk mill (disk mill), a planetary mill, etc.
The amount of the glass frit used is not particularly limited, but, for example, the glass frit may be included in an amount of 0.1 to 20 weight percent (e.g., 0.1 to 10 weight percent) based on the total weight of the composition for forming the solar cell electrode. Within the above range, the stability of the p-n junction at various sheet resistances can be ensured, the resistance can be minimized, and the efficiency of the solar cell can be finally improved.
Organic vehicle
The organic vehicle imparts viscosity and rheological properties suitable for printing to the composition by mechanical mixing with the inorganic components of the composition used to form the solar cell electrode.
The organic vehicle may be an organic vehicle generally used for a composition for forming a solar cell electrode, and may include a binder resin, a solvent, and the like.
As the binder resin, an acrylate resin, a cellulose resin, or the like can be used. For example, ethyl cellulose may be used as the binder resin. As another example, ethyl hydroxyethyl cellulose, nitrocellulose, a mixture of ethyl cellulose and a phenol resin, an alkyd resin, a phenol resin, an acrylate resin, a xylene resin, a polybutylene resin, a polyester resin, a urea resin, a melamine resin, a vinyl acetate resin, wood rosin (rosin), polymethacrylate, or the like can be used as the binder resin.
The solvent may be used alone or in combination with, for example, hexane, toluene, ethyl cellosolve, cyclohexanone, butyl cellosolve, butyl carbitol (diethylene glycol monobutyl ether), dibutyl carbitol (diethylene glycol dibutyl ether), butyl carbitol acetate (diethylene glycol monobutyl ether acetate), propylene glycol monomethyl ether, hexylene glycol, rosin alcohol (Terpineol), methyl ethyl ketone, benzyl alcohol, γ -butyrolactone, ethyl lactate, or 2, 2, 4-trimethyl-1, 3-pentanediol monoisobutyrate (for example, dodecanol (Texanol)), or the like.
The amount of the organic vehicle used is not particularly limited, but for example, the organic vehicle may be included in an amount of 1 to 30 weight percent (e.g., 3 to 20 weight percent) based on the total weight of the composition for forming the solar cell electrode. Within the above range, sufficient adhesive strength and excellent printability can be ensured.
Additive agent
In order to improve flow characteristics, process characteristics, and stability, the composition for forming a solar cell electrode may further include a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, an anti-foaming agent, a pigment, an ultraviolet stabilizer, an antioxidant, a coupling agent, etc. in addition to the above components, and the above additives may be included singly or in an amount of 2 or more. The additive may be included in an amount of 0.1 to 5 weight percent based on the total weight of the composition for forming the solar cell electrode, but the content thereof may be changed as needed.
Solar cell electrode and solar cell comprising same
According to another embodiment, there are provided a solar cell electrode formed of the above composition for forming a solar cell electrode and a solar cell including the same. Fig. 1 schematically shows the structure of a solar cell 100 according to an example of the present invention.
Referring to fig. 1, a composition for forming a solar cell electrode may be printed and baked on a wafer or substrate 10 including a p-type layer (or n-type layer) 11 and an n-type layer (or p-type layer) 12 as an emitter, thereby forming a rear electrode 21 and a front electrode 23 of a solar cell. For example, the preliminary preparation step for preparing the rear electrode may be performed by printing a composition for forming the solar cell electrode on the rear surface of the wafer, followed by drying at a temperature of 200 to 400 ℃ for 10 to 60 seconds. Also, a pre-preparation step for preparing a front electrode may be performed by drying after printing a composition for forming a solar cell electrode on the front surface of the wafer. Thereafter, the front electrode and the rear electrode may be formed by performing a baking process of baking at a temperature of 400 to 950 ℃ for 30 to 210 seconds.
The present invention will be described in further detail below with reference to examples. This is merely a preferred example of the invention and should not be construed as limiting the invention in any way.
Examples
Example 1
1.5 parts by weight of ethyl cellulose (STD4, Dow chemical Co., Ltd.) as a binder resin was sufficiently dissolved in 5 parts by weight of abienol (Nippon Terpine Co., Ltd.) as a solvent at 60 ℃, and then 89.5 parts by weight of spherical silver powder (4-8F, Dow high tech Co., Ltd. (Dow Co., Ltd.)) having an average particle diameter of 2.0 μm, 2.0 parts by weight of glass powder A having an average particle diameter of 1.0 μm shown in Table 1 below, 0.5 parts by weight of dispersant (BYK-02, ByK-chem)), 1.5 parts by weight of a thixotropic agent (castor oil-modified derivative (Thi xatrol ST), Haimines Co., Ltd.,) was added and uniformly mixed and then mixed and dispersed in a 3-roll kneader, thereby preparing a composition for a solar cell electrode.
Examples 2 to 3 and comparative examples 1 to 8
Compositions for forming electrodes of solar cells were prepared in the same manner as in example 1, except that glass frits B to K in table 1 below were used instead of glass frit a.
Preparation of solar cells
Texturing the front surface of a wafer (Boron doped p-type wafer) with phosphorus oxychloride (POCl)3) Form n+Layer of n+Forming silicon nitride (SiN) on the layerx: H) the rear surface of a single crystal (mono crystalline) wafer prepared with the antireflection film of (1) was printed with an aluminum paste and then dried at a temperature of 300 c for 30 seconds. Thereafter, the above-described composition for forming a solar cell electrode, prepared in examples and comparative examples, was screen-printed on the front surface of the wafer and was dried at a temperature of 300 ℃ for 30 seconds. The cell formed through the above process was baked at a temperature of 940 ℃ for 70 seconds using a belt baking oven, thereby preparing a solar cell, and the following characteristics were evaluated.
(1) Electric characteristics
The conversion efficiency (eff., unit:%) of the solar cell prepared in the above manner was measured using a solar cell efficiency testing apparatus (Halm, fordix tech), and the results thereof are shown in the following table 2.
(2) Adhesion (Unit: N)
After coating a Flux (Flux, 952S, Kester) on the busbar portion of the solar cell prepared in the above manner and adhering a ribbon (62Sn/36Pb/2Ag, thickness of 0.18mm, width of 1.5mm) at a temperature of 360 ℃ using an electric iron, the end of the ribbon was fixed at an angle of 180 ° and stretched at a speed of 50mm/min, the value thereof was measured using a tensioner (Mocel H5K-T, zenitherson (tinius Olsen)), and the result thereof is shown in the following table 2.
TABLE 1
(unit: mole percent)
Figure BDA0002990360880000101
TABLE 2
Conversion efficiency (%) Adhesion (N)
Example 1 20.05 2.4
Example 2 20.02 2.2
Example 3 19.98 2.1
Comparative example 1 19.91 1.5
Comparative example 2 19.92 1.3
Comparative example 3 19.83 1.0
Comparative example 4 19.95 1.6
Comparative example 5 19.87 2.0
Comparative example 6 19.85 1.5
Comparative example 7 19.91 1.8
Comparative example 8 19.82 2.1
As can be confirmed from table 2 above, the compositions for forming solar cell electrodes of examples 1 to 3 including the glass frit including one or more of lead and bismuth, lithium, zinc, boron, magnesium, and titanium and satisfying formulas 1 to 4 are excellent in conversion efficiency and adhesion, as compared to comparative examples 1 to 8 which are not so.
The present invention has been described above centering on a plurality of embodiments. It will be understood by those skilled in the art that the present invention may be embodied in various forms without departing from the essential characteristics thereof. Accordingly, the disclosed embodiments are to be considered in all respects as illustrative and not restrictive. The scope of the invention is shown only in the claims of the invention rather than in the above description, and all differences within the equivalent scope to the present invention should be construed as being included in the present invention.

Claims (8)

1. A composition for forming an electrode of a solar cell, characterized in that,
comprises conductive powder, glass powder and an organic carrier,
the glass powder contains one or more of lead and bismuth, lithium, zinc, boron, magnesium and titanium, and satisfies the following formulas 1 to 4,
formula 1
0.1≤MZn/MLi≤0.5，
Formula 2
0.001≤MB/MLi≤0.05，
Formula 3
0.1≤MMg/MLi≤1，
Formula 4
0.001≤MTi/MLi≤0.05，
In the above formula, MLiIs the molar percentage of lithium, MZnIs the molar percentage of zinc, MBIs the mole percent of boron, MMgIs the mole percent of magnesium, MTiIs the mole percent of titanium.
2. The composition for forming a solar cell electrode according to claim 1, wherein the glass frit comprises:
5 to 30 mole percent of one or more of lead and bismuth;
15 to 25 mole percent lithium;
1 to 10 mole percent zinc;
0.01 to 3 mole percent boron;
1 to 20 mole percent magnesium;
0.01 to 3 mole percent titanium.
3. The composition for forming a solar cell electrode according to claim 1, wherein the glass frit further contains at least one element selected from the group consisting of tellurium, phosphorus, germanium, gallium, silver, cerium, iron, silicon, tungsten, cesium, niobium, strontium, molybdenum, tin, indium, vanadium, barium, nickel, copper, sodium, potassium, arsenic, selenium, cobalt, zirconium, manganese, copper, calcium, aluminum, thallium, tantalum, and cerium.
4. The composition of claim 1, wherein the glass frit further comprises 25 to 50 mole percent of tellurium.
5. The composition of claim 1, wherein the glass frit further comprises 5 to 15 mole percent of tungsten.
6. The composition for forming a solar cell electrode according to claim 1, further comprising at least one of a dispersant, a thixotropic agent, a plasticizer, a viscosity stabilizer, an antifoaming agent, a pigment, an ultraviolet stabilizer, an antioxidant, and a coupling agent.
7. The composition for forming an electrode of a solar cell according to claim 1, wherein the composition for forming an electrode of a solar cell comprises:
60 to 95 weight percent of the above conductive powder;
0.1 to 20 weight percent of the glass powder; and
1 to 30 weight percent of the above organic vehicle.
8. A solar cell electrode formed from the composition of any one of claims 1 to 7.
CN202110312398.2A 2020-03-26 2021-03-24 Composition for forming solar cell electrode and solar cell electrode formed therefrom Pending CN113450941A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114883026A (en) * 2022-01-18 2022-08-09 湖南利德电子浆料股份有限公司 Special aluminum paste for double-sided back passivation crystalline silicon solar cell and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114883026A (en) * 2022-01-18 2022-08-09 湖南利德电子浆料股份有限公司 Special aluminum paste for double-sided back passivation crystalline silicon solar cell and preparation method thereof
CN114883026B (en) * 2022-01-18 2024-02-02 湖南利德电子浆料股份有限公司 Aluminum paste special for double-sided back passivation crystalline silicon solar cell and preparation method thereof

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