CN114964533A

CN114964533A - Temperature measuring device and temperature measuring method for semiconductor equipment

Info

Publication number: CN114964533A
Application number: CN202210398937.3A
Authority: CN
Inventors: 刘自强
Original assignee: Jiangsu Tianxin Micro Semiconductor Equipment Co ltd
Current assignee: Jiangsu Tianxin Micro Semiconductor Equipment Co ltd
Priority date: 2022-04-15
Filing date: 2022-04-15
Publication date: 2022-08-30

Abstract

The invention relates to a temperature measuring device and a temperature measuring method applied to semiconductor equipment, wherein the semiconductor equipment is provided with a cavity, and the outside of the cavity is provided with an outer side wall; the temperature measuring device comprises a first connecting joint, a second connecting joint, a first sealing joint, a second sealing joint and a temperature measuring component; the first connecting joint and the second connecting joint are sleeved and can move relatively; the first sealing joint is fixedly connected with the first connecting joint and is used for being detachably connected with the outer side wall of the cavity in a sealing manner; the second sealing joint is connected with the second connecting joint, and at least one of the first connecting joint and the second connecting joint is provided with a resistance sealing layer on the contact surface of the first connecting joint and the second connecting joint; the temperature measurement component is connected with the second sealing joint in a sealing mode, and the displacement of the temperature measurement component is driven by the displacement of the second connecting joint to achieve adjustment of the temperature measurement position of the temperature measurement component in the cavity. The invention can adjust the temperature measurement position, and is convenient for temperature calibration and measurement.

Description

Temperature measuring device and temperature measuring method for semiconductor equipment

Technical Field

The invention relates to the field of temperature testing in a cavity of semiconductor epitaxial equipment, in particular to a temperature measuring device and a temperature measuring method for the semiconductor equipment.

Background

The semiconductor epitaxial equipment is used for performing thin film deposition on a substrate, the substrate to be processed in a cavity is generally required to be heated in the deposition process, and a base plate is arranged in the substrate processing cavity at present and used for supporting the substrate. The substrate and the substrate are heated by heating lamps, which are usually located outside the process chamber, and the light waves of the heating lamps are generally required to transmit heat energy to the substrate and the substrate through the transparent window in a thermal radiation manner.

The characteristics of the thin film (e.g., film thickness, density, dopant density, etc.) during epitaxial deposition are extremely sensitive to substrate temperature, and therefore control of substrate temperature is extremely important, as well as the uniformity of the substrate heating due to the thermal sensitivity of the thin film.

As shown in FIG. 1, the current epitaxy equipment mainly comprises a reaction chamber body consisting of an upper quartz dome 117, a lower quartz dome 109 and a sealed connection through an upper quartz ring 101 and a lower quartz ring 113; and outer side walls 118 are arranged outside the upper quartz ring and the lower quartz ring, and the outer side walls 118 of the cavity are fixedly arranged with the upper quartz dome 117 and the lower quartz dome 109 through the upper flange 105 and the lower flange 108 respectively.

The connecting position of the upper quartz ring and the lower quartz ring is provided with a through hole for the temperature thermocouple assembly 200 as a temperature measuring device to extend into, the temperature thermocouple assembly 200 is detachably connected with the outer side wall 118 of the cavity in a sealing way through a sealing joint 204, and the outer side wall 118 of the cavity is further provided with a tail exhaust interface 107 for exhausting process waste gas. A plurality of infrared heating lamps 102 and a temperature sensor 103 are arranged on the upper and lower sides outside the cavity, and a graphite base plate 106, a rotary lifting support shaft 110 for supporting the base plate 106 and a support frame 111 are arranged in the cavity. The substrate 104 is placed above the graphite base plate 106, a through hole is formed for the pin shaft 112 to pass through, and the pin shaft 112 jacks up the substrate 104 on the base plate 106 through the through hole. Light waves from the heating lamps 102 pass through the upper and lower quartz domes to heat the substrate 106 within the chamber. A preheating ring 116 is provided around the base plate 106.

As shown in fig. 2, the conventional temperature thermocouple assembly 200 includes a thermocouple protection sheath 202 having a thermocouple sealed therein, and a thermocouple compensation wire 205 extending from a second end of the thermocouple protection sheath 202 and connected to the thermocouple, wherein a sealing joint 204 is disposed on the thermocouple protection sheath 202, after the first end of the thermocouple protection sheath 202 extends into the cavity of the epitaxial device, the thermocouple protection sheath is connected to the outer sidewall 118 of the cavity in a sealing manner through the sealing joint 204, the outer sidewall 118 of the cavity is provided with a joint connected to the sealing joint 204 in a sealing manner, and a rubber sealing ring 203 is disposed in the sealing joint 204 to assist sealing. The thermocouple is arranged at the first end in the thermocouple protection sleeve 202 to form a temperature measuring point 201, and after the thermocouple protection sleeve 202 enters the cavity, the temperature measuring point 201 is located near the central part of the graphite base plate 106 and used for correcting the temperature of the temperature sensor 103.

In the epitaxial process, a temperature sensor 103 is needed to monitor the process temperature, the temperature sensor 103 is optical, a pyrometer is generally adopted, and the pyrometer has the characteristic of non-contact, but a thermocouple is needed to correct the temperature before the temperature sensor is used, the traditional temperature correction method is that the thermocouple is arranged in a cavity, the temperature sensors 103 are placed on the upper side and the lower side of a base plate 106 outside the cavity, and the temperature sensors are calibrated according to the test result of the thermocouple. The conventional thermocouple mainly extends into the cavity from the outer side of the cavity through an opening on the outer side wall 118 of the cavity to measure the temperature as shown in fig. 1. During temperature calibration, the chamber is in vacuum or a specific gas atmosphere, so the outer sidewall 118 of the chamber and the thermocouple need to be connected in a sealing manner to prevent air from entering the chamber. The conventional method is to extend a rod-shaped temperature thermocouple assembly into a specific position in the cavity through an opening on the outer side wall 118 of the cavity, and then seal and fix the rod-shaped temperature thermocouple assembly. The thermocouple arranged in this way is fixed in position, so that only the temperature at the fixed position point of the cavity (i.e., the temperature near the central portion of the graphite base plate 106) can be measured. In order to accurately calibrate the temperature sensor 103, the position of the temperature measuring point 201 and the position irradiated by the temperature sensor 103 need to be coincident, but because the position of the thermocouple is fixed, the coincidence of the two positions is difficult to ensure, and the temperature of only one position can be measured.

Moreover, since the positions of the points on the base plate 106 and the heating lamps 102 are close and far, uneven heating may be caused, the temperature measuring device is required to be movable in order to more accurately measure the temperature values of the points on the base plate 106, and the temperature values of different positions on the base plate 106 are obtained through the movable temperature measuring device to monitor the temperature gradient of the heating of the base plate 106, so as to judge the heating uniformity, and adjust the power and/or the positions of the heating lamps 102. Based on the problems, the invention provides a temperature measuring device to solve the problems existing in the traditional temperature measuring mode.

Disclosure of Invention

The invention aims to provide a temperature measuring device which can simultaneously test temperature values of a plurality of position points, is movable and can measure the temperature of different position points in a cavity of an epitaxial equipment.

In order to achieve the purpose, the invention is realized by the following technical scheme:

the invention provides a temperature measuring device, which is used for semiconductor equipment, and the semiconductor equipment comprises: cavity, basal disc, the cavity includes the lateral wall, the basal disc sets up in the cavity, its characterized in that includes:

the first connecting joint is connected with the first connecting joint,

the first connecting joint and the second connecting joint are sleeved and can relatively move;

the first sealing joint is fixedly connected with the first connecting joint and is used for being detachably connected with the outer side wall of the cavity in a sealing way;

the second sealing joint is connected with the second connecting joint, and at least one of the first connecting joint and the second connecting joint is provided with a resistance sealing layer on the contact surface of the first connecting joint and the second connecting joint;

the temperature measuring component is connected with the second sealing joint in a sealing mode, penetrates through the first connecting joint and the second connecting joint, and is driven to move through the displacement of the second connecting joint so that the temperature measuring position of the temperature measuring component in the cavity can be adjusted.

Further, the first connection joint comprises a sleeve, the second connection joint comprises a sleeve, and openings of the two sleeves are oppositely arranged.

Further, the resistive seal layer comprises polytetrafluoroethylene.

Further, a plurality of annular bulges are arranged on the surface of the resistance sealing layer.

Furthermore, the second connecting joint is pulled to adjust the connecting distance between the second connecting joint and the first connecting joint, so that the temperature measuring component is driven to move, and the temperature measuring position of the temperature measuring component in the cavity is adjusted.

Further, the temperature measuring device further comprises: the first end of the telescopic sealing element is connected with the first sealing joint in a sealing mode, and the second end of the telescopic sealing element is connected with the second sealing joint in a sealing mode.

Further, the second sealing joint comprises: a second outer joint and a second inner joint; one end of the second inner joint is hermetically connected with a second outer joint, and the second outer joint is hermetically connected with the temperature measuring component; the other end of the second inner joint is connected with a telescopic sealing element in a sealing mode; the second connecting joint is connected with the second inner joint.

Further, the second connecting joint is connected with the second nipple by welding.

Further, the first sealing joint comprises: a first outer joint and a first inner joint; one end of the first inner joint and the first outer joint are fixedly connected with each other, and the first outer joint is detachably connected with the outer side wall of the cavity in a sealing manner; the other end of the first inner joint is connected with a telescopic sealing element in a sealing mode; the first connecting joint is fixedly connected with the first inner joint.

Further, the telescopic sealing element is a corrugated pipe.

Further, the outer side surface of the first connecting joint or the second connecting joint is provided with scales.

Furthermore, the temperature measuring component is rod-shaped.

Further, the first sealing joint is connected with the outer side wall of the semiconductor device in a sealing mode through the first sealing piece.

Furthermore, the temperature measuring assembly is connected with the second sealing joint in a sealing mode through a second sealing piece.

Further, the temperature measuring assembly comprises a thermocouple sheath and at least one thermocouple hermetically arranged in the thermocouple sheath.

Furthermore, the number of the thermocouples is at least two, and the thermocouples are respectively arranged at a plurality of temperature measuring points.

Further, the semiconductor device is an epitaxial device.

Furthermore, the temperature measuring component extends into the temperature measuring hole of the base plate in the cavity of the semiconductor equipment.

On the other hand, the invention also provides a temperature measuring method of the semiconductor equipment, which comprises the following steps:

providing the temperature measuring device;

and the second connecting joint is displaced so as to drive the displacement of the temperature measuring component, and the temperatures of a plurality of temperature measuring points in the cavity are obtained through the temperature measuring component.

Compared with the prior art, the invention has the following beneficial effects:

1. the invention can accurately adjust the position of the temperature measuring device, thereby enabling the position of the thermocouple to be superposed with the position irradiated by the temperature sensor and ensuring the accuracy of temperature correction.

2. And a plurality of positions can be detected simultaneously, and more temperature measuring points are obtained after position adjustment, so that the radial temperature gradient of the base plate is obtained, and the heating uniformity of the heating lamp is judged.

Drawings

FIG. 1 is a schematic diagram of a temperature thermocouple assembly measuring the temperature of a semiconductor device cavity in the prior art;

FIG. 2 is a schematic view of a prior art temperature thermocouple assembly;

FIG. 3 is a schematic view of a temperature measuring device according to the present invention;

FIG. 4 is a schematic view of another embodiment of the temperature measuring device of the present invention;

FIG. 5 is an enlarged view of a portion of another embodiment of the temperature measuring device of the present invention;

FIG. 6 is a partially enlarged view of the temperature measuring device of the present invention disposed in a graphite base plate;

FIG. 7 is a schematic view of the temperature measuring device of the present invention mounted on a semiconductor device.

Detailed Description

The following describes a temperature measuring device and method according to the present invention in detail with reference to the accompanying drawings and the detailed description. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are all used in a non-precise scale for the purpose of facilitating and distinctly aiding in the description of the embodiments of the present invention. To make the objects, features and advantages of the present invention comprehensible, reference is made to the accompanying drawings. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the implementation conditions of the present invention, so that the present invention has no technical significance, and any structural modification, ratio relationship change or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention.

Fig. 7 is a schematic structural diagram of a temperature measuring device 300 applied to a semiconductor device according to the present invention. The semiconductor device is provided with a cavity, outside which an outer sidewall 118 is provided. One end of the temperature measuring device 300 can penetrate through the outer side wall 118 of the semiconductor device to extend into the cavity, and is inserted into a temperature measuring hole of the base plate 106 arranged in the cavity to measure the temperature. The temperature measuring device 300 has a displacement function, and the temperature measuring position of the temperature measuring device in the cavity can be adjusted outside the cavity. As shown in fig. 4 and 6, the head of the temperature measuring device 300 is provided with at least two temperature measuring points, optionally three temperature measuring points 301, 302, and 303, for solving the problem of fixing the temperature measuring points of the temperature measuring device 300, and the tail of the temperature measuring device 300 is connected with a thermocouple compensation wire 315.

As shown in fig. 3 and fig. 4, the temperature measuring device 300 provided by the present invention includes a first connecting joint 308, a second connecting joint 309, a first sealing joint 305, a second sealing joint 312, and a temperature measuring component, wherein the first connecting joint 308 and the second connecting joint 309 are sleeved and can move relatively; the first sealing joint 305 is fixedly connected with a first connecting joint 308, the first sealing joint 305 is used for being detachably connected with the outer side wall 118 of the cavity in a sealing way, and optionally, the first sealing joint 305 is connected with the outer side wall of the semiconductor device in a sealing way through a first sealing element 306; the second sealing joint 312 is connected with a second connecting joint 309; the temperature measuring component is hermetically connected with the second sealing joint 312, penetrates through the first connecting joint 308 and the second connecting joint 309, and is driven to move by the displacement of the second connecting joint 309 so as to adjust the temperature measuring position of the temperature measuring component in the cavity.

Optionally, in the present invention, the first connection joint 308 is a sleeve, the second connection joint 309 is a sleeve, openings of the two sleeves are arranged oppositely, and optionally, the first connection joint 308 is sleeved on an outer surface of the second connection joint 309, or the second connection joint 309 is sleeved on an outer surface of the first connection joint 308.

In this embodiment, on the contact surface of the first connection joint 308 and the second connection joint 309, at least one of the first connection joint 308 and the second connection joint 309 is provided with a resistance sealing layer 400, the interior and the exterior of the cavity are isolated by the resistance sealing layer 400, and the temperature measuring assembly is isolated from the outside air inside the first connection joint 308 and the second connection joint 309; specifically, when the first connector 308 is sleeved on the outer surface of the second connector 309, the resistance sealing layer may be disposed on at least one of the inner surface of the first connector 308 or the outer surface of the second connector 309, and when the second connector 309 is sleeved on the outer surface of the first connector 308, the resistance sealing layer may be disposed on at least one of the outer surface of the first connector 308 or the inner surface of the second connector 309.

Preferably, the resistive seal layer 400 includes, but is not limited to, a polytetrafluoroethylene material that can achieve a seal without causing particles to fall into the cavity and affect the epitaxial process.

In this embodiment, the relative displacement between the first connection joint 308 and the second connection joint 309 is adjusted by pulling, the second connection joint 309 can be pulled, the connection distance S between the second connection joint 309 and the first connection joint 308 can be adjusted, the temperature measuring component is driven to move, and the temperature measuring position of the temperature measuring component in the cavity can be adjusted.

Optionally, as shown in fig. 5, the surface of the resistive sealing layer 400 is provided with a plurality of annular protrusions 401, an annular groove is formed between two adjacent annular protrusions 401, and the annular protrusions 401 can perform the functions of sealing and increasing the resistance, and particularly, after the annular protrusions 401 of the resistive sealing layer 400 on the second connection joint 309 are coupled with the annular groove of the resistive sealing layer 400 on the first connection joint 308, the sealing and resistance increasing effects are particularly prominent.

Optionally, although the resistive sealing layer 400 can perform a sealing function, in order to further ensure the sealing effect, the temperature measuring device 300 further includes a telescopic sealing member 307, a first end of the telescopic sealing member 307 is connected with the first sealing joint 305 in a sealing manner, and a second end of the telescopic sealing member 307 is connected with the second sealing joint 312 in a sealing manner. The temperature measurement component is arranged in the telescopic sealing part 307 in a penetrating mode and stretches into the cavity, the telescopic sealing part 307 further isolates the temperature measurement component from the outside, meanwhile, the telescopic sealing part 307 isolates negative pressure in the cavity, resistance to be set by the resistance sealing layer 400 is reduced, and therefore the second connecting joint 309 can be moved more easily.

Further, in this embodiment, the second sealing joint 312 includes a second outer joint 3121 and a second inner joint 3122, one end of the second inner joint 3122 is connected to the second outer joint 3121 in a sealing manner, and the second outer joint is connected to the temperature measuring assembly in a sealing manner, optionally, the second outer joint is connected to the temperature measuring assembly in a sealing manner through the second sealing member 314; the other end of the second inner joint is connected with a telescopic sealing element 307 in a sealing way; the second coupling joint 309 is coupled to an outer surface of the second inner joint, and optionally, the second coupling joint 309 is coupled to the second inner joint by welding. Of course, alternatively, the second outer joint 3121 and the second inner joint 3122 may be separately manufactured and reconnected, or they may be integrally formed.

Further, the first seal joint 305 includes a first outer joint 3051 and a first inner joint 3052; one end of the first inner joint 3052 and the first outer joint 3051 are fixedly connected with each other, and the first outer joint is detachably connected with the outer side wall 118 of the cavity in a sealing manner; the other end of the first inner joint is connected with a telescopic sealing element 307 in a sealing way; the first connection joint 308 is fixedly connected with the first nipple. Of course, alternatively, the first outer joint 3051 and the first inner joint 3052 may be separately manufactured and then coupled, or may be integrally formed.

Preferably, the telescoping seal 307 is a bellows, optionally a stainless steel bellows; the temperature measuring component is rod-shaped.

Preferably, scales are arranged on the outer side surface of the first connecting joint 308 or the second connecting joint 309, and the connecting distance S can be intuitively and accurately controlled according to the scales; for example, in the embodiment shown in fig. 3-4 (the second connector 309 is sleeved on the outer surface of the first connector 308), in this embodiment, only the outer surface of the first connector 308 is provided with the scale, when the second connector 309 is displaced by a distance, the second connector 309 covers a part of the scale, and the edge of the second connector 309 can indicate the displacement distance; similarly, when the first connection joint 308 is sleeved on the outer surface of the second connection joint 309, only the outer surface of the second connection joint 309 is provided with scales.

Preferably, the first sealing joint 305 is hermetically connected with the outer sidewall 118 of the semiconductor device through a first sealing member 306.

Preferably, the thermometric assembly is sealingly connected to the second sealing joint 312 via a second seal 314.

The temperature measuring assembly in the embodiment of the present invention includes a thermocouple sheath 304, and at least one thermocouple, optionally at least two thermocouples, and further optionally three thermocouples, which are hermetically disposed in the thermocouple sheath 304, and are respectively disposed at three temperature measuring points 301, 302, and 303. In other preferred embodiments, the number of thermocouples can be set according to requirements, and the interval between adjacent thermocouples can be set according to requirements. The advantages are that: taking fig. 4 as an example, three temperature measuring points are respectively arranged at three positions, and when the second connector 309 is moved once, temperature data of 6 positions can be obtained; furthermore, the temperature measuring point 301 is arranged at the center of the base plate, and the distance between the temperature measuring point 301 and the temperature measuring point 302, the distance between the temperature measuring point 302 and the temperature measuring point 303, and the moving distance of the second connecting head 309 are fixed and known, so that the temperature distribution gradient in the radial direction (from the center to the edge) of the base plate can be obtained, and the uniformity of the temperature distribution can be adjusted.

The semiconductor device in the above embodiments is preferably an epitaxial device. As shown in fig. 7, the epitaxial apparatus mainly comprises a reaction chamber consisting of an upper quartz dome 117, a lower quartz dome 109 and a sealed connection through an upper quartz ring 101 and a lower quartz ring 113; and outer side walls 118 are arranged outside the upper quartz ring and the lower quartz ring, and the outer side walls 118 of the cavity are fixedly arranged with the upper quartz dome 117 and the lower quartz dome 109 through the upper flange 105 and the lower flange 108 respectively.

The connecting position of the upper quartz ring and the lower quartz ring is provided with a through hole for the temperature measuring device 300 to extend into, the temperature measuring device 300 is connected with the outer side wall 118 of the cavity in a sealing and detachable manner, and the outer side wall 118 of the cavity is also provided with a tail exhaust port 107 for exhausting process waste gas. A plurality of infrared heating lamps 102 and a temperature sensor 103 are arranged on the upper and lower sides outside the cavity, and a graphite base plate 106, a rotary lifting support shaft 110 for supporting the base plate 106 and a support frame 111 are arranged in the cavity. The substrate 104 is placed above the graphite base plate 106, a through hole is formed for the pin shaft 112 to pass through, and the pin shaft 112 jacks up the substrate 104 on the base plate 106 through the through hole. Light waves from the heating lamps 102 pass through the upper and lower quartz rings to heat the substrate 106 within the chamber. A preheating ring 116 is provided around the base plate 106.

The temperature measuring device in the above embodiment is used to calibrate the temperature sensor 103 of the epitaxial equipment before the epitaxial process is formally performed. Specifically, during temperature measurement calibration, a base plate 106 with a temperature measurement hole is arranged in the epitaxial equipment. The temperature measuring component of the temperature measuring device extends into the temperature measuring hole of the base plate 106 in the cavity of the epitaxial equipment, and the first sealing joint 305 is connected with the outer side wall 118 of the epitaxial equipment in a sealing manner through the first sealing element 306. When the temperature measuring device 300 is used, the temperature measuring point 301 at the upper end part of the temperature measuring component is positioned at the central position of the base plate 106, and the position of the temperature measuring point 301 can be finely adjusted to calibrate the temperature sensor 103, so that the calibration is more accurate.

The temperature measuring method using the temperature measuring device 300 comprises the following steps: and (3) displacing the second connecting joint 309 so as to drive the temperature measuring component connected with the second connecting joint to displace, further changing the positions of temperature measuring points at the head of the temperature measuring component, obtaining the temperatures of a plurality of temperature measuring points in the cavity through the temperature measuring component, and calibrating the temperature sensor 103 through the temperature measuring points 301. In the above embodiment, the position of the temperature measuring component is adjusted by displacing the second connecting joint 309, and the specific adjustment manner is as follows:

the position of the temperature measuring assembly is adjusted by pulling the second connecting joint 309. Specifically, the second connection joint 309 is pulled to adjust the relative displacement between the second connection joint 309 and the first connection joint 308, and since the second connection joint 309 is fixedly connected to the second sealing joint 312, when the second connection joint 309 is pulled, the second sealing joint 312 can be driven to move, so as to drive the temperature measuring component which is fixedly connected to the second sealing joint 312 in a sealing manner to synchronously move in the first connection joint 308 and the second connection joint 309, and further adjust the positions of the temperature measuring points on the temperature measuring component in the base plate 106, so that the temperature can be measured at different positions on the base plate 106, and the temperature sensor 103 can be calibrated through the temperature measuring points 301.

In summary, the temperature measuring device and the temperature measuring method provided by the invention have the following beneficial effects:

1. the invention can accurately adjust the position of the temperature measuring device, thereby enabling the position of the thermocouple to coincide with the position irradiated by the temperature sensor and ensuring the accuracy of temperature correction.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.

Claims

1. A temperature measuring device for a semiconductor apparatus, the semiconductor apparatus comprising: cavity, basal disc, the cavity includes the lateral wall, the basal disc sets up in the cavity, its characterized in that includes:

the first connecting joint is connected with the first connecting joint,

2. The thermometric apparatus of claim 1, wherein the first connector comprises a sleeve and the second connector comprises a sleeve, the openings of the two sleeves being disposed opposite one another.

3. The thermometric apparatus of claim 1, wherein said resistive seal comprises polytetrafluoroethylene.

4. The temperature measuring device of claim 3, wherein said resistive seal has a plurality of annular protrusions formed on a surface thereof.

5. The temperature measuring device of claim 3, wherein the second connector is pulled to adjust the distance between the second connector and the first connector, thereby moving the temperature measuring assembly to adjust the position of the temperature measuring assembly within the cavity.

6. The thermometric apparatus of claim 2, further comprising: the first end of the telescopic sealing element is connected with the first sealing joint in a sealing mode, and the second end of the telescopic sealing element is connected with the second sealing joint in a sealing mode.

7. The thermometric apparatus of claim 6, wherein said second sealing joint comprises: a second outer joint and a second inner joint; one end of the second inner joint and a second outer joint are hermetically connected with each other, and the second outer joint is hermetically connected with the temperature measuring component; the other end of the second inner joint is connected with a telescopic sealing element in a sealing mode; the second connector fitting is connected to the second nipple.

8. The temperature measuring device of claim 7, wherein the second connector is connected to the second nipple by welding.

9. The thermometric apparatus of claim 6, wherein said first sealing joint comprises: a first outer joint and a first inner joint; one end of the first inner joint is fixedly connected with the first outer joint, and the first outer joint is detachably connected with the outer side wall of the cavity in a sealing manner; the other end of the first inner joint is connected with a telescopic sealing element in a sealing mode; the first connecting joint is fixedly connected with the first inner joint.

10. The thermometric apparatus of any one of claims 6-9, wherein said telescoping seal is a bellows.

11. The temperature measuring device according to any one of claims 1 to 9, wherein the outer side surface of the first joint or the second joint is provided with a scale.

12. The thermometric apparatus of any one of claims 1-9, wherein the thermometric assembly is rod-shaped.

13. The temperature measuring device of any one of claims 1-9, wherein the first sealing joint is sealingly connected to an outer sidewall of the semiconductor device by a first seal.

14. The thermometric apparatus of any one of claims 1-9, wherein the thermometric assembly is sealingly connected to the second sealing joint by a second seal.

15. The thermometric apparatus of any of claims 1-9, wherein the thermometric assembly comprises a thermocouple sheath, and at least one thermocouple sealingly disposed within the thermocouple sheath.

16. The thermometric apparatus of claim 15, wherein the number of said thermocouples is at least two, said thermocouples being respectively disposed at a plurality of temperature measuring points.

17. The thermometric apparatus of any of claims 1-9, wherein said semiconductor device is an epitaxial device.

18. The temperature measuring device according to any one of claims 1 to 9, wherein the temperature measuring assembly extends into a temperature measuring hole of a base plate in a cavity of the semiconductor device.

19. A temperature measuring method of a semiconductor device is characterized in that,

providing a temperature measuring device according to any one of claims 1 to 18;