CN114959842A

CN114959842A - Electroplating device and method for manufacturing packaging structure

Info

Publication number: CN114959842A
Application number: CN202110190373.XA
Authority: CN
Inventors: 许嘉峻
Original assignee: Advanced Semiconductor Engineering Inc
Current assignee: Advanced Semiconductor Engineering Inc
Priority date: 2021-02-18
Filing date: 2021-02-18
Publication date: 2022-08-30
Also published as: TW202233901A; TWI821884B

Abstract

The present disclosure provides an electroplating apparatus and a method for manufacturing a package structure. According to some embodiments of the present disclosure, an electroplating apparatus includes a first bus; and a second bus, wherein an included angle is formed between the first bus and the second bus, the first bus comprises a first end portion close to the second bus and a first portion far away from the second bus, and the gap of the cathode of the first end portion of the first bus is larger than that of the cathode of the first portion.

Description

Electroplating device and method for manufacturing packaging structure

Technical Field

The present disclosure relates to an electroplating apparatus, and more particularly, to a method of forming a package structure using the electroplating apparatus.

Background

In order to increase the yield, the quadrangular substrate and the plating apparatus applied to the quadrangular substrate are beginning to be widely used in various processes of semiconductor manufacturing and/or packaging, such as a plating process. When performing an electroplating process on a square substrate, electrodes arranged to correspond to the shape of the substrate are used. Because the electric charge is easily accumulated at the included angle (corner) of the substrate, the electric field at the included angle is larger than that of other regions, so that the deposition speed of metal ions at the included angle is higher than that of other regions, and the formed electroplated layer has the problem of poor uniformity. Therefore, a new electroplating apparatus and method are needed to improve the above problems.

Disclosure of Invention

According to some embodiments of the present disclosure, an electroplating apparatus includes a first bus (bus line); and a second bus, wherein an included angle is formed between the first bus and the second bus, the first bus comprises a first end portion close to the second bus and a first portion far away from the second bus, and the gap of the cathode of the first end portion of the first bus is larger than that of the cathode of the first portion.

According to some embodiments of the present disclosure, a method of manufacturing a package structure includes: providing an electroplating device, wherein the electroplating device comprises a first bus and a second bus, an included angle is formed between the first bus and the second bus, and the electroplating device further comprises a first block close to the included angle and a second block far away from the included angle; and providing an electric field of the first bus line located in the first block to be smaller than an electric field of the first bus line located in the second block.

Drawings

Aspects of the present disclosure may be readily understood by the following detailed description when read in conjunction with the accompanying drawings. It should be noted that the various features may not be drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a cross-sectional view of a portion of an electroplating apparatus according to a comparative example of the present disclosure.

Fig. 2 is a bottom view of a plating apparatus according to a comparative example of the present disclosure.

Fig. 3 is a top view of a plating apparatus and a substrate according to a comparative example of the present disclosure.

FIG. 4 is a schematic diagram showing the metal concentration corresponding to different regions of the substrate during the electroplating process.

Fig. 5 is a cross-sectional view illustrating a package structure formed using the plating apparatus of the comparative example.

Fig. 6 is a top view of an electroplating apparatus according to an embodiment of the disclosure.

Fig. 7 is a top view of an electroplating apparatus according to an embodiment of the disclosure.

Fig. 8 is a top view of an electroplating apparatus according to an embodiment of the disclosure.

Fig. 9 is a top view of an electroplating apparatus according to an embodiment of the disclosure.

Fig. 10 is a top view of an electroplating apparatus according to an embodiment of the disclosure.

Fig. 11 is a top view of an electroplating apparatus according to an embodiment of the disclosure.

Fig. 12 is a top view of an electroplating apparatus according to an embodiment of the disclosure.

Fig. 13 is a top view of an electroplating apparatus according to an embodiment of the disclosure.

Fig. 14 is a top view of an electroplating apparatus according to an embodiment of the disclosure.

Fig. 15 illustrates a cross-sectional view of a package structure according to an embodiment of the disclosure.

Common reference numerals are used throughout the drawings and the detailed description to refer to the same or like components. The present disclosure will become more apparent from the detailed description set forth below when taken in conjunction with the drawings.

Detailed Description

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to be limiting. In the present disclosure, a reference to forming or disposing a first feature on or over a second feature may encompass embodiments in which the first and second features are formed or disposed in direct contact, and may also encompass embodiments in which additional features may be formed or disposed between the first and second features such that the first and second features may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Embodiments of the present disclosure are discussed in detail below. However, it should be appreciated that the present disclosure provides many applicable concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative and do not limit the scope of the disclosure.

FIG. 1 is a cross-sectional view of a portion of a plating apparatus 10' and a substrate 20 according to a comparative example of the present disclosure.

As shown in fig. 1, the plating apparatus 10 'may include a substrate carrier 11', an electrode fixing member 12', and a conductive layer 13'. The plating apparatus 10' may be a plating apparatus for performing, for example, a plating process. Specifically, the substrate 20 may be placed on the plating apparatus 10 'and placed in a plating tank (not shown) together with the plating apparatus 10' to perform a plating process to form a circuit layer (or a plated layer) on the surface of the substrate 20. In FIG. 1, only some of the components of the electroplating apparatus 10' are shown. The electroplating apparatus 10' may have other components, such as a power supply, an anode, and/or other components.

The substrate carrier 11' may be used to carry the substrate 20. The substrate carrier 11' may have a recess (not shown) to accommodate the substrate 20. The substrate carrier 11' may have other means for holding the substrate 20.

The electrode fixing member 12 'may be used to dispose or fix the conductive layer 13'. The electrode fixing member 12 'may be in contact with the substrate carrier 11'. For example, the electrode fixing member 12' may be disposed on the substrate carrier 11' and directly contact the substrate carrier 11 '. The electrode fixing member 12 'and the substrate carrier 11' may be integrally formed. Alternatively, the electrode fixing member 12 'and the substrate carrier 11' are separable into two separate components through disassembly. The electrode fixing member 12 'may not be in contact with the substrate carrier 11'. For example, the electrode fixing member 12 'may be mounted on the substrate carrier 11' via another component.

The conductive layer 13 'may be disposed on the electrode fixing member 12'. The conductive layer 13' may include a connection member 131' and a cathode 132 '. The connecting member 131 'may be used to electrically connect and/or fix the plurality of cathodes 132'. The cathode 132' may be used to contact the substrate 20 to provide current to the surface of the substrate 20. For example, the connecting member 131 'may be connected to a power source, and when the cathode 132' is in contact with the substrate 20, a current may be applied to the surface of the substrate 20 through the connecting member 131 'and the cathode 132'.

The substrate 20 may be a glass substrate, a wafer, and/or other suitable substrate. The surface of the substrate 20 may be used to form a circuit layer. The wiring layer may be used to electrically connect, for example, one or more electronic components, such as a chip or other suitable electronic component.

A mask layer 31 may be disposed on the substrate 20. The masking layer 31 may be an insulating material such as photoresist or other suitable component. The shield layer 31 may be used to define a plating pattern formed on the surface of the substrate 20. For example, the shielding layer 31 may cover a first portion of the surface of the substrate 20 and expose a second portion of the surface of the substrate 20. A seed layer (not shown) may be formed on a second portion of the surface of the substrate 20, and a wiring layer may be formed on the second portion of the surface of the substrate 20 by an electroplating process.

The support 32 may be used to separate the shielding layer 31 and the electrode fixing member 12'. The length of the support 32 can be adjusted to adjust the relative position of the cathode 132' and the substrate 20.

Fig. 2 is a bottom view of a plating apparatus 10' according to a comparative example of the present disclosure. The substrate carrier 11' is not shown for simplicity.

As shown in fig. 2, the electrode fixing member 12' may have a quadrangular contour. The electrode holding member 12' may also have other suitable profiles, such as a polygonal shape or other suitable profile. The electrode fixing member 12' may have a ring-shaped contour having a hollowed-out pattern in the central portion, or may have a contour having no hollowed-out pattern in the central portion. The electrode fixing member 12' may cover the connection member 131' and/or the cathode 132 '. The electrode fixing member 12' may completely or partially cover the connection member 131' and/or the cathode 132 '.

The connection member 131' may have a quadrangular contour. The connecting member 131' may also have other suitable profiles, such as a polygon or other suitable profile. The connecting member 131' may be a ring-shaped profile having a hollowed-out pattern at a central portion thereof. The conductive layer 13 or the connection means 131' may have a bus line (bus line)13e1 and a bus line 13e2 adjacent to the bus line 13e 1. The bus 13e1 may extend in a first direction and the bus 13e2 may extend in a second direction. The first direction may be different from the second direction. The first direction may be substantially perpendicular to the second direction. The bus 13e1 may be connected with the bus 13e 2. Bus 13e1 may not be connected with bus 13e 2. The angle 13c1 may be formed by the bus 13e1 and the bus 13e 2.

Cathodes 132 'may be disposed on each side of the connecting member 131', such as bus 13e1 and bus 13e 2. At least one cathode 132' is present on one side (e.g., bus 13e1) of connecting member 131' to which connecting member 131' is attached. Each cathode 132 'may extend from an edge of the connecting member 131' (e.g., the bussing lines 13e2 of the bussing lines 13e1) toward a central portion of the connecting member 131 '(e.g., the hollowed-out pattern defined by the connecting member 131'). Each cathode 132' may have a portion overlapping (or contacting) the connection member 131' and a portion not overlapping (or contacting) the connection member 131 '.

As shown in fig. 2, the electrode fixing member 12' may have a non-end R1 and an end R2 corresponding to the bus 13e 1. The non-end portion R1 and the end portion R2 may have the same area when viewed from a top or bottom view. The end R2 may be a different distance from the included angle 13c1 than the non-end R1 from the included angle 13c 1. End R2 is closer to angle 13c1 than non-end R1. The non-end R1 and the end R2 are imaginary regions for calculating the area ratio occupied by the cathode 132' per unit area. Specifically, the area ratio of the cathode 132 'occupied by the non-end portion R1 can be defined as the area of the cathode 132' overlapping with the non-end portion R1 in the upward or downward view; the area ratio of the cathode 132 'occupied at the end R2 can be defined as the area where the cathode 132' overlaps the end R2 in the upward or downward viewing angle. As shown in fig. 2, in the comparative example, the area ratio occupied by the cathode 132 'in the non-end portion R1 is the same as the area ratio occupied by the cathode 132' in the end portion R2.

Fig. 3 is a top view of a plating apparatus 10' and a substrate 20 according to a comparative example of the present disclosure. Some components are omitted to clearly show the positional relationship between the substrate 20 and the cathode 132'. In addition, the portion of the substrate 20 covered by the cathode 132' is indicated by a dotted line.

As shown in fig. 3, the substrate 20 may have a quadrangular contour. The substrate 20 may also have other suitable profiles, such as polygonal or other suitable profiles. The substrate 20 has an overlap with the cathode 132'. The cathode 132' may have a portion in contact with the substrate 20. The area ratio of the cathode 132 'in the non-end portion R1 is substantially proportional to the area of the cathode 132' in the corresponding non-end portion R1 of the substrate 20 in contact with the substrate 20, and the area ratio of the cathode 132 'in the end portion R2 is substantially proportional to the area of the cathode 132' in the corresponding end portion R2 of the substrate 20 in contact with the substrate 20. The area of the cathode 132' contacting or overlapping the substrate 20 per unit area affects the current density received per unit area. For example, if the larger the area of contact or overlap of the cathode 132' with the substrate 20 per unit area, the greater the current density received per unit area. In the comparative example, since the area ratio occupied by the cathode 132' in the non-end portion R1 is the same as the area ratio occupied by the cathode 132' in the end portion R2, the current density applied to the substrate 20 corresponding to the non-end portion R1 by the plating apparatus 10' is substantially the same as the current density applied to the substrate 20 corresponding to the end portion R2.

As shown in fig. 3, the substrate 20 has an angle corresponding to the angle of the conductive layer 13'. For example, the substrate 20 has an included angle 20c1 corresponding to the included angle 13c1, and an included angle 20c2 corresponding to the included angle 13c 2. When the electroplating process is performed, tip discharge (corona discharge) is easily generated at the included angles (e.g., the included angles 20c1 and 20c2) of the substrate 20, so that relatively large electric fields are easily generated at the included angles 20c1 and 20c2 during the electroplating process, which affects the thickness and uniformity of the electroplated layer. Specifically, if the same current density is applied to the substrate 20 near the included angle 20c1 (e.g., corresponding to the end R2) and far from the included angle 20c1 (e.g., corresponding to the non-end R1), a relatively large electric field is generated in the substrate 20 near the included angle 20c1 (e.g., corresponding to the end R2), and a relatively large electric field is generated in the substrate 20 far from the included angle 20c1 (e.g., corresponding to the non-end R1), so that the thicknesses of the circuit layers near the included angle and far from the included angle are different.

Referring to fig. 4, fig. 4 is a schematic diagram illustrating the concentration of metal ions M corresponding to different regions of the substrate 20 when the electroplating process is performed in the comparative example.

When the electroplating apparatus 10' and the substrate 20 are placed in an electroplating tank (not shown) during the electroplating process, the conductive layer 13' of the electroplating apparatus 10' may be electrically connected to a cathode of a power source (not shown). An electric field is generated between the anode and the cathode of the power supply, so that the metal ions M in the plating solution are collected to the cathode by the electric field, and are reduced to metal and deposited on the substrate 20. As previously described, due to the tip discharge, if the same current density is applied to different regions of the substrate 20, a larger electric field may be generated in the substrate 20 near the included angle 20c1 and near the included angle 20c2, and a smaller electric field may be generated in the substrate 20 away from the included angle 20c1 and away from the included angle 20c 2. Therefore, the metal ions M in the plating solution are more likely to gather near the included angle 20c1 and near the included angle 20c2, and more difficult to gather far from the included angle 20c1 and far from the included angle 20c2, so that the concentrations of the metal ions M near the included angle 20c1 and near the included angle 20c2 are greater, and the concentrations of the metal ions M far from the included angle 20c1 and far from the included angle 20c2 are smaller. As a result, there is a relatively large thickness difference between the thickness of the circuit layer formed near the included angles (e.g., included angle 20c1 and included angle 20c2) and the thickness of the circuit layer formed far from the included angles.

Fig. 5 is a cross-sectional view of a package structure 40 'formed using the electroplating apparatus 10' of the comparative example.

After the electroplating process is performed, the circuit layer 31', the circuit layer 32' and the circuit layer 33' are formed on the substrate 20. The wiring layer 31', the wiring layer 32' and the wiring layer 33' may comprise metal, such as copper, silver, gold, aluminum, nickel, zinc, chromium or other suitable materials. The circuit layer 31' is disposed near the included angle 20c1, the circuit layer 33' is disposed near the included angle 20c2, and the circuit layer 32' is disposed far from the included angle 20c1 and the included angle 20c 2. As described above, due to the point discharge, the thickness of the wiring layer 31 'formed at the corresponding included angle 20c1 is greater than that of the wiring layer 32', and the thickness of the wiring layer 33 'formed at the corresponding included angle 20c2 is greater than that of the wiring layer 32'. In the comparative example, the standard deviation of the thickness uniformity of the circuit layer is greater than 10%, which negatively affects the subsequent processes (e.g., mounting electronic components on the circuit layer), thereby reducing the yield of the package structure 40'.

In order to further improve the yield of the electroplating process, the embodiment of the disclosure designs the pattern configuration of the cathode of the electroplating device in advance so that the cathodes in different areas have different areas and/or gaps, or controls different currents applied to the cathodes in different areas, so as to compensate the problem of uneven electric field caused by the user at the top.

Fig. 6 is a top view of a plating apparatus 10a and a substrate 20 according to an embodiment of the present disclosure. For simplicity, some components (e.g., substrate carrier, electrode mounting member) are not shown. The electroplating apparatus 10a may be the same as or similar to the electroplating apparatus 10', one of which differs from the cathode 132 a. The cathode 13 may include a connection member 131 and a cathode 132 a. The connecting member 131 may be identical to the connecting member 131'. Cathode 132a includes cathode 1321 located in non-end R1 and cathode 1322 located in end R2. In some embodiments, the first area ratio occupied by the cathode 1321 within the non-end R1 is different than the second area ratio occupied by the cathode 1322 within the end R2. In some embodiments, the first area ratio is greater than the second area ratio. In some embodiments, the area of each cathode 1321 is the same as the area of each cathode 1322 from the top view, i.e., the area of each cathode 1321 in contact with the substrate 20 is the same as the area of each cathode 1322 in contact with the substrate 20. In some embodiments, the number of cathodes 1321 within the non-end R1 is greater than the number of cathodes 1322 within the end R2. In some embodiments, the gap (pitch) of the cathode 1321 within the non-end R1 is less than the gap of the cathode 1322 within the end R2.

In this embodiment, the ratio of the areas occupied by the cathodes (e.g., the cathode 1321 and the cathode 1322) per unit area is changed to adjust the area of contact or overlap between the cathode 132a and the substrate 20, thereby changing the current density applied to the substrate 20. As shown in fig. 6, the second area ratio occupied by the cathode 1322 at the end portion R2 near the included angle 13c1 is smaller than the first area ratio occupied by the cathode 1321 at the non-end portion R1 away from the included angle 13c1, so that the current density obtained at the end portion R2 corresponding to the substrate 20 (or at the position near the included angle 20c 1) is smaller than the current density obtained at the non-end portion R1 corresponding to the substrate 20 (or at the position far from the included angle 20c 1). In this embodiment, a relatively strong electric field is likely to be generated in the substrate 20, and a relatively weak electric field is likely to be generated in the substrate 20, so that the difference between the electric fields generated in the two places is small. Therefore, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the package structure is improved.

Fig. 7 is a top view of a plating apparatus 10b according to an embodiment of the present disclosure. The electroplating apparatus 10b may be the same as or similar to the electroplating apparatus 10a, one of which differs in the arrangement of the cathodes 132 b. The connection member 131 may have a bus bar 13e3, and the bus bar 13e3 may be adjacent to the bus bar 13e1 and face the bus bar 13e 2. The angle 13c3 may be formed by the bus 13e1 and the bus 13e 3. The plating apparatus 10b may have an end R3. The end R2 and the end R3 are located on both sides of the bus 13e 1. The non-end R1 is located between the end R2 and the end R3. End R3 may be closer to angle 13c3 than non-end R1. In some embodiments, the first area ratio occupied by the cathode 1321 in the non-end portion R1 is different from the third area ratio occupied by the cathode 1323 in the end portion R3. In some embodiments, the third area ratio occupied by the cathode 1323 at the end R3 near the included angle 13c3 is less than the first area ratio occupied by the cathode 1321 at the non-end R1 away from the included angle 13c 1. In some embodiments, the third area ratio occupied by cathode 1323 near end R3 at angle 13c3 is substantially equal to the second area ratio occupied by cathode 1322 near end R2 at angle 13c 1.

In this embodiment, the current density applied to the substrate 20 is changed by adjusting the area of contact or overlap between the cathode 132b and the substrate 20 by changing the area ratio of the cathode (e.g., the cathode 1321, the cathode 1322, and the cathode 1323) per unit area. As shown in fig. 7, the current densities obtained at the non-end portion R1, the end portion R2, and the end portion R3 of the substrate 20 were adjusted by changing the area ratio of the non-end portion R1, the end portion R2, and the end portion R3 to the cathode 132 b. In this embodiment, a relatively strong electric field is likely to be generated in the substrate 20, and a relatively weak electric field is likely to be generated in the substrate 20, so that the difference between the electric fields generated in the two places becomes small. Therefore, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the package structure is improved.

Fig. 8 is a top view of a plating apparatus 10c according to an embodiment of the present disclosure. The electroplating apparatus 10c may be the same as or similar to the electroplating apparatus 10a, with one difference being in the cathode 132 c. In some embodiments, the first area ratio occupied by the cathode 1321 in the non-end portion R1 is different than the second area ratio occupied by the cathode 1322 in the end portion R2. In some embodiments, at least one of the plurality of cathodes 1321 located at the non-end R1 has an area different from an area of at least one of the plurality of cathodes 1322 located at the end R2. In some embodiments, at least one of the plurality of cathodes 1321 located at the non-end R1 has an area greater than at least one of the plurality of cathodes 1322 located at the end R2. In some embodiments, the gap between the plurality of cathodes 1321 may be the same as the gap between the plurality of cathodes 1322. In some embodiments, the gap between the plurality of cathodes 1321 may be different from the gap between the plurality of cathodes 1322.

In this embodiment, the ratio of the area occupied by the cathode (e.g., the cathode 1321 and the cathode 1322) per unit area is changed to adjust the area of contact or overlap between the cathode and the substrate 20, thereby changing the current density applied to the substrate 20. Therefore, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the package structure is improved.

Fig. 9 is a top view of a plating apparatus 10d according to an embodiment of the present disclosure. The electroplating apparatus 10d may be the same as or similar to the electroplating apparatus 10a, with one difference being in the cathode 132 d. In some embodiments, the first area ratio occupied by the cathode 132d in the non-end portion R1 is different from the second area ratio occupied by the cathode 132d in the end portion R2. In some embodiments, the cathode 132d may extend continuously from the non-end R1 to the end R2 in a first direction (e.g., the direction of extension of the bus 13e 1). In some embodiments, the cathode 132d has a first length L1 in the second direction (e.g., the direction of extension of the bus 13e2) at the non-end R1, and a second length L2 in the second direction at the end R2, the first length L1 being different from the second length L2. In some embodiments, the first length L1 is greater than the second length L2. In other embodiments, the cathode 132d may not continuously extend from the non-end R1 to the end R2 in the first direction.

Fig. 10 is a top view of a plating apparatus 10e according to an embodiment of the present disclosure. The plating apparatus 10e may be the same as or similar to the plating apparatus 10a, with one difference being in the connecting member 131. In some embodiments, connection means 131 may include bus 13e4 and bus 13e 5. In some embodiments, the bus 13e4 and the bus 13e5 may form a quadrilateral. In some embodiments, bus 13e4 may be electrically connected to a same power source as bus 13e 5. In some embodiments, bus 13e4 is connected in parallel with bus 13e 5. In some embodiments, bus 13e4 may be electrically connected to a different power source than bus 13e 5. Cathode 132e may include cathode 1323 and cathode 1324. The cathode 1323 may be electrically connected to the bus 13e 4. The cathode 1324 may be electrically connected to the bus 13e 5. When the bus line 13e4 and the bus line 13e5 are electrically connected to different power sources, the current density of the substrate 20 corresponding to different areas can be adjusted by applying different voltages to the bus line 13e4 and the bus line 13e 5.

Fig. 11 is a top view of a plating apparatus 10f according to an embodiment of the present disclosure.

In some embodiments, the electroplating apparatus 10f can include block (or portion) D1 and block (or portion) D2. The bus 13e1 includes a terminal R2, a terminal R3, and a non-terminal R1. The bus 13e2 includes a terminal R4, a terminal R6, and a non-terminal R5. The end R2 is proximate to the included angle 13c1, and the end R3 and the non-end R1 are distal to the included angle 13c 1. End R4 is closer to angle 13c1, and non-end R5 and end R6 are further from angle 13c 1. In some embodiments, block D1 includes end R2 of bus 13e1 and end R4 of bus 13e 2. Block D2 includes end R3 and non-end R1 of bus 13e1 opposite end R2. In some embodiments of the electroplating apparatus 10f, the electric fields of different zones can be adjusted by pre-changing the pattern configuration of the cathode of the electroplating apparatus such that the cathodes of different zones have different areas and/or gaps, or controlling the currents applied to the cathodes of different zones to be different, for example, providing an electric field of the bus 13e1 within the zone D1 smaller than an electric field of the bus 13e1 within the zone D2. Thus, the sum of electric fields (sum of electric fields) of the bus lines 13e1 and 13e2 in the block D1 is substantially the same as the electric field of the bus lines 13e1 in the block D2. That is, the electric field in the block D1 is substantially the same as the electric field in the block D2. In some embodiments, the gap between the cathodes 1322 of block D1 of the electroplating apparatus 10f is greater than the gap between the cathodes 1323 of block D2. In some embodiments, the cathode 1322 of the bus bar 13e1 of the electroplating apparatus 10f has a larger gap than the cathode 1323 of the bus bar 13e 1. In some embodiments, the gap of the cathode 1326 of the end R6 of the electroplating apparatus 10f is greater than the gap of the cathode 1324 of the end R4. In some embodiments, the gap of the cathode 1326 of the bus bar 13e2 of the electroplating apparatus 10f is greater than the gap of the cathode 1324 of the bus bar 13e 2. In some embodiments, the method of adjusting the electric field may include providing current to the end R2 of the bus 13e1 and not providing current to the end R4 of the bus 13e2, or providing current to the end R4 of the bus 13e2 and not providing current to the end R2 of the bus 13e1, in which case the bus 13e1 is not (physically) contiguous with the bus 13e 2. In some embodiments, the cathode 1321 of the bus 13e1 and the cathode 1324 of the bus 13e2 do not overlap.

In this embodiment, a smaller electric field is applied to the portion of the substrate 20 corresponding to the bus line of the included angle, and a larger electric field is applied to the portion of the substrate away from the bus line of the included angle, so that the electric fields and (or electric fluxes) of the two blocks are substantially the same. Therefore, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the package structure is improved.

Fig. 12 is a top view of a plating apparatus 10g according to an embodiment of the disclosure.

In some embodiments, the electroplating device 10f may include block (or portion) D1, block (or portion) D2, and block (or portion) D2'. The block D1 includes the end R2 of the bus bar 13e1 and the end R4 of the bus bar 13e 2. Tile D2 includes the non-end R1 of bus 13e 1. Tile D2' includes the non-end R5 of bus 13e 2. In the electroplating apparatus 10g of some embodiments, the electric fields of different regions can be adjusted by pre-changing the pattern configuration of the cathode of the electroplating apparatus such that the cathodes of different regions have different areas and/or gaps, or controlling the currents applied to the cathodes of different regions to be different, for example, providing an electric field of the bus 13e1 within the region D1 smaller than that of the bus 13e1 within the region D2; the electric field providing the bus line 13e1 located within the sector D1 is smaller than the electric field providing the bus line 13e2 located within the sector D2'. In some embodiments, the gap of the

cathode

1322 or 1324 of block D1 of the electroplating apparatus 10g is greater than the gap of the cathode 1321 of block D2. In some embodiments, the gap of the

cathode

1322 or 1324 of block D1 of the electroplating apparatus 10g is greater than the gap of the cathode 1325 of block D2'. In some embodiments, the gap of the cathode 1322 of the end R2 of the electroplating apparatus 10g is greater than the gap of the cathode 1321 of the non-end R1. In some embodiments, the gap of the cathode 1323 of the end R3 of the plating apparatus 10g is greater than the gap of the cathode 1321 of the non-end R1. In some embodiments, the gap of the cathode 1324 of the end R4 of the electroplating apparatus 10g is greater than the gap of the cathode 1325 of the non-end R5. In some embodiments, the gap of the cathode 1326 of the end R6 of the electroplating apparatus 10g is greater than the gap of the cathode 1325 of the non-end R5. In some embodiments, the method of adjusting the electric field may include controlling the current of the end R2 and the end R3 of the bus 13e1 to be less than the current of the non-end R1, or controlling the current of the end R4 and the end R6 of the bus 13e2 to be less than the current of the non-end R5. In this embodiment, a smaller electric field is applied to the portion of the substrate 20 corresponding to the bus line of the included angle, and a larger electric field is applied to the portion of the substrate away from the bus line of the included angle, so that the electric fields and (or electric fluxes) of the two blocks are substantially the same. Therefore, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the package structure is improved.

Fig. 13 is a top view of a plating apparatus 10h according to an embodiment of the present disclosure.

In some embodiments, end R2 of bus 13e1 does not include a cathode. In this embodiment, a smaller current density is given to a place where a relatively strong electric field is likely to be generated in the substrate 20, and a larger current density is given to a place where a relatively weak electric field is likely to be generated in the substrate 20, so that the difference in the electric fields generated at the two places becomes small. Therefore, the uniformity of the thickness of the circuit layer formed on the substrate 20 is improved, and the manufacturing yield of the package structure is improved.

Fig. 14 is a top view of a plating apparatus 10i according to an embodiment of the present disclosure.

In some embodiments, the plating device 10i includes a bus 13e6, a bus 13e7, and a bus 13e 8. In some embodiments, the bus 13e6, the bus 13e7, and the bus 13e8 may form a quadrilateral. The bus 13e6 may be located at the corresponding block D1. The bus 13e7 may be located at the corresponding block D2. The bus 13e8 may be located at the corresponding block D2'. In some embodiments, bus 13e6, bus 13e7, and bus 13e8 are electrically connected to different power sources. In some embodiments, bus 13e6, bus 13e7, and bus 13e8 are not connected to each other. In some embodiments, the method for adjusting an electric field may comprise: the current of the control block D1 is less than the current of the block D2 or the block D2'. For example, the current of the control bus 13e6 is less than the current of the bus 13e7, or the current of the control bus 13e6 is less than the current of the bus 13e 8. When the bus 13e6, the bus 13e7, and the bus 13e8 are electrically connected to different power sources, different currents can be provided to the bus 13e6, the bus 13e7, and the bus 13e8 to control the current density (or the electric flux) of the substrate 20 corresponding to different regions.

Fig. 15 illustrates a cross-sectional view of a package structure 40 according to an embodiment of the disclosure.

The package structure 40 may be formed by using the

plating apparatuses

10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, or 10i to perform a plating process, and then forming the circuit layers 31, 32, and 33. The circuit layers 31, 32 and 33 of the package structure 40 have smaller thickness difference and thus smaller standard deviation of thickness than the circuit layers 31', 32' and 33 'of the package structure 40'. In some embodiments, the standard deviation of the thicknesses of the circuit layers 31, 32, and 33 of the package structure 40 may be between about 0 and about 5%.

Spatially relative terms, such as "below," "lower," "above," "over," "upper," "lower," "upper," "left," "right," and the like, as used herein, may be used herein for ease of description to describe one component or feature's relationship to another component or feature as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 80 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present.

As used herein, the terms "about," "substantially," and "about" are used to describe and explain minor variations. When used in conjunction with an event or circumstance, the terms may refer to instances where the event or circumstance occurs precisely as well as instances where it occurs in close proximity. As used herein with respect to a given value or range, the term "about" generally means within ± 10%, ± 5%, ± 1%, or ± 0.5% of the given value or range. Ranges may be expressed herein as from one end point to another end point or between two end points. All ranges disclosed herein are inclusive of the endpoints unless otherwise indicated. The term "substantially coplanar" may refer to two surfaces positioned along the same plane with a positional difference within a few microns (μm), such as within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm. When numerical values or characteristics are said to be "substantially" the same, the term can refer to values that are within ± 10%, ± 5%, ± 1% or ± 0.5% of the mean of the values.

The foregoing has outlined features of several embodiments and detailed aspects of the present disclosure. The embodiments described in this disclosure may be readily utilized as a basis for designing or modifying other processes and structures for carrying out the same or similar purposes and/or achieving the same or similar advantages of the embodiments introduced herein. Such equivalent constructions do not depart from the spirit and scope of the present disclosure, and various changes, substitutions, and alterations may be made therein without departing from the spirit and scope of the present disclosure.

Claims

1. An electroplating apparatus, comprising:

a first bus; and

a second bus, wherein an angle is formed between the first bus and the second bus, the first bus comprises a first end portion close to the second bus and a first portion far away from the second bus, and the gap of the cathode of the first end portion of the first bus is larger than the gap of the cathode of the first portion.

2. The plating apparatus as recited in claim 1, wherein said first portion is a second end portion of said first bus bar opposite said first end portion.

3. The plating apparatus of claim 1, wherein the second bus bar comprises a third end portion proximate to the first bus bar and a second portion distal to the first bus bar, wherein a gap of a cathode of the third end portion of the second bus bar is smaller than a gap of a cathode of the second portion.

4. The electroplating apparatus of claim 1 wherein the first portion is a first non-end of the first bus, the first bus further comprising a second end opposite the first end, the second end of the first bus having a cathode gap greater than a cathode gap of the first non-end cathode.

5. The plating apparatus of claim 4 wherein the second bus bar includes a third end proximate the first bus bar, a second non-end, and a fourth end opposite the third end, wherein a gap of a cathode of the second non-end is less than a gap of a cathode of the third end of the second bus bar and a gap of a cathode of the second non-end is less than a gap of a cathode of the fourth end of the second bus bar.

6. The plating apparatus as recited in claim 3, wherein said second portion is a fourth end of said second bus bar opposite said third end.

7. The plating apparatus of claim 2 wherein said second bus bar includes a third end portion adjacent said first bus bar, the gap of the cathode of said third end portion being smaller than the gap of the cathode of said first end portion.

8. The electroplating apparatus of claim 1, wherein the first end of the first bus does not comprise a cathode.

9. The plating apparatus as recited in claim 1, wherein said first bus is connected to said second bus.

10. A method of fabricating a package structure, comprising:

providing an electroplating device, wherein the electroplating device comprises a first bus and a second bus, an included angle is formed between the first bus and the second bus, and the electroplating device further comprises a first block close to the included angle and a second block far away from the included angle; and

the electric field of the first bus line positioned in the first block is provided to be smaller than the electric field of the first bus line positioned in the second block.

11. The method of claim 10, wherein the first block comprises a first end of the first bus line near the included angle and a second end of the second bus line near the included angle, the second block comprises a first portion of the first bus line away from the included angle or a second portion of the second bus line away from the included angle, and the electric field in the first block is substantially the same as the electric field of the first bus line in the second block or the electric field of the second bus line in the second block.

12. The method of claim 11, wherein providing the first bus located within the first block has an electric field that is less than an electric field of the first bus located within the second block comprises: and providing the electroplating device, wherein the gap of the cathode of the first block is larger than that of the cathode of the second block.

13. The method of claim 12, wherein the second block is a third end of the first bus relative to the first end or a fourth end of the second bus relative to the second end.

14. The method of claim 12, wherein the second block is a first non-end of the first bus or a second non-end of the second bus, and the first bus further comprises a third end opposite the first end, the second bus further comprises a fourth end opposite the second end, wherein providing the electric field of the first bus within the first block is less than the electric field of the first bus within the second block comprises: the plating device is provided in which a gap between cathodes of the first end portion and the third end portion of the first bus bar is larger than a gap between cathodes of the first non-end portion, or the plating device is provided in which a gap between cathodes of the second end portion and the fourth end portion of the second bus bar is larger than a gap between cathodes of the second non-end portion.

15. The method of claim 12, wherein providing the first bus located within the first block has an electric field that is less than an electric field of the first bus located within the second block comprises: providing the plating device with a gap of the cathode of the second end portion of the second bus bar smaller than a gap of the cathode of a fourth end portion of the second bus bar opposite to the second end portion.

16. The method of claim 11, wherein providing the electric field of the first bus located within the first block is less than the electric field of the first bus located within the second block comprises: and controlling the current of the first block to be smaller than the current of the second block.

17. The method of claim 16, wherein the second block is a third end of the first bus relative to the first end or a fourth end of the second bus relative to the second end.

18. The method of claim 11, wherein the second block is a first non-end of the first bus or a second non-end of the second bus, and the first bus further comprises a third end opposite the first end, the second bus further comprises a fourth end opposite the second end, wherein providing the electric field of the first bus within the first block is less than the electric field of the first bus within the second block comprises: controlling the current of the first end and the third end of the first bus to be less than the current of the first non-end, or controlling the current of the second end and the fourth end of the second bus to be less than the current of the second non-end.

19. The method of claim 12, wherein the second bus comprises a fourth end relative to the second end, wherein providing the electric field of the first bus located within the first block to be less than the electric field of the first bus located within the second block comprises: providing the plating device with a gap of a cathode of the second end of the second bus bar being smaller than a gap of a cathode of the fourth end of the second bus bar.

20. The method of claim 10, wherein the first block comprises a first end of the first bus near the included angle and a second end of the second bus near the included angle, wherein providing that an electric field of the first bus within the first block is less than an electric field of the first bus within the second block comprises: providing current at the first end of the first bus and not providing current at the second end of the second bus, or providing current at the second end of the second bus and not providing current at the first end of the first bus.