CN114959654B - Wafer bearing disc and thin film deposition device using same - Google Patents

Wafer bearing disc and thin film deposition device using same Download PDF

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Publication number
CN114959654B
CN114959654B CN202110215635.3A CN202110215635A CN114959654B CN 114959654 B CN114959654 B CN 114959654B CN 202110215635 A CN202110215635 A CN 202110215635A CN 114959654 B CN114959654 B CN 114959654B
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unit
wafer
heating
heating coil
heating unit
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CN114959654A (en
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林俊成
王俊富
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Xintianhong Xiamen Technology Co ltd
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Xintianhong Xiamen Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention relates to a wafer bearing disc and a thin film deposition device applying the same, which mainly comprise a heating unit, an insulating heat conduction unit and an electric conduction part, wherein the insulating heat conduction unit is positioned between the electric conduction part and the heating unit. The wafer carrying tray is used for carrying at least one wafer, wherein the conductive part is closer to the wafer than the heating unit. An ac bias may be formed on the conductive portion during deposition to attract the plasma above the conductive portion. The heating unit comprises at least one heating coil, wherein the heating coil heats the wafer carried by the wafer carrying disc through the insulating heat conducting unit and the electric conduction part. The insulating heat conducting unit electrically isolates the heating unit and the conductive part to avoid the mutual conduction of alternating current on the heating coil and alternating current bias of the conductive part, so that the wafer bearing disc can generate stable alternating current bias and temperature, and uniform films are formed on the surface of the wafer borne by the wafer bearing disc.

Description

Wafer bearing disc and thin film deposition device using same
Technical Field
The present invention relates to a wafer carrier, and more particularly, to a thin film deposition apparatus using the wafer carrier, wherein a heating unit and a conductive portion are electrically isolated by an insulating heat conducting unit, so as to avoid the conduction between the current of a heating coil and the ac bias of the conductive portion, and facilitate the formation of a uniform thin film on the surface of a wafer carried by the wafer carrier.
Background
Chemical Vapor Deposition (CVD), physical Vapor Deposition (PVD), and Atomic Layer Deposition (ALD) are common thin film deposition equipment and are commonly used in the manufacture of integrated circuits, light emitting diodes, and displays.
The deposition apparatus mainly comprises a chamber and a wafer carrying tray, wherein the wafer carrying tray is positioned in the chamber and is used for carrying at least one wafer. Taking physical vapor deposition as an example, a target needs to be disposed in the chamber, wherein the target faces the wafers on the wafer carrier. During physical vapor deposition, inert gas and/or reactive gas can be delivered into the chamber and bias is applied to the target and the wafer carrier plate, respectively, wherein the wafer carrier plate also heats the loaded wafers. The inert gas in the chamber forms ionized inert gas due to the high voltage electric field. The ionized inert gas is attracted to the bias on the target and bombards the target. Target atoms or molecules sputtered from the target are attracted by the bias on the wafer carrier and deposit on the surface of the heated wafer to form a thin film on the surface of the wafer.
In addition, when performing chemical vapor deposition and atomic layer deposition, it may be necessary to heat the wafer carrier and provide a bias voltage to the wafer carrier, so as to facilitate forming a thin film with uniform thickness on the surface of the wafer carried by the wafer carrier.
Disclosure of Invention
As described in the prior art, it is often necessary to provide an ac bias to the wafer carrier during the deposition process and heat the wafer carrier through a heating coil to improve the uniformity of the thin film deposited on the wafer surface. However, the ac current on the heating coil may be conducted with the ac bias voltage on the wafer carrier, so that the magnitude of the ac bias voltage on the wafer carrier is unstable, and the thickness of the thin film deposited on the wafer surface is uneven. In order to avoid the above-mentioned situation, the present invention provides a novel wafer carrier, which is mainly used to electrically isolate the heating coil and the conductive portion on the wafer carrier by an insulating heat conducting unit, so as to prevent the ac current on the heating coil from interfering with the ac bias voltage on the conductive portion, so that the wafer carrier can form a stable ac bias voltage, and the uniformity of the thin film formed on the wafer surface is improved.
An objective of the present invention is to provide a wafer carrier, which mainly includes a heating unit, an insulating and heat-conducting unit, and a conductive portion, wherein the insulating and heat-conducting portion is located between the heating unit and the conductive portion, and electrically isolates the heating unit and the conductive portion. Through the arrangement of the insulating conductive part, the interference caused by the mutual conduction of alternating current on the heating coil of the heating unit and alternating current bias on the conductive part can be avoided, so that stable alternating current bias can be formed on the conductive part. In addition, the heating unit can still transmit heat to the conductive part through the insulating conductive part and heat the wafer carried by the wafer carrying disc.
An objective of the present invention is to provide a wafer carrier, which mainly includes a heating unit, an insulating and heat-conducting unit, a conductive portion, a base, and a fixing base, wherein the insulating and heat-conducting unit is located between the heating unit and the conductive portion, and the fixing base is connected to the heating unit through the base. The base comprises a plurality of annular connecting pieces with different radiuses, wherein the upper surface and the lower surface of the annular connecting piece closest to the inner side are respectively provided with an O-shaped ring, so that the upper surface and the lower surface of the annular connecting piece are respectively connected with the heating unit and the fixing seat through the O-shaped rings.
In addition, a cooling channel can be further arranged between the O-shaped ring of the annular connecting piece and the adjacent heating unit and/or heating coil, so as to reduce the temperature of the O-shaped ring which is closer to the heating unit and prevent the O-shaped ring from being degraded due to the environment of high temperature for a long time.
An object of the present invention is to provide a wafer carrier, wherein the heating unit of the wafer carrier includes a plurality of heating coils, and each heating coil is used for heating different areas of the wafer carrier. In addition, the current supplied to each heating coil can be controlled during the heating process, so that the temperatures of different areas of the wafer carrying tray can be adjusted in a partitioning manner, and the surface of the wafer carrying tray carrying the wafer can generate uniform temperatures.
In addition, at least one temperature sensing unit can be respectively arranged in different areas of the wafer carrying disc, and the temperatures of different areas on the wafer carrying disc can be respectively measured by the different temperature sensing units. The temperature of each area of the wafer carrying disc can be adjusted accurately in real time by heating the wafer carrying disc in a partitioned manner through the plurality of heating coils and measuring the temperature in a partitioned manner by matching with the plurality of temperature sensing units.
In order to achieve the above-mentioned object, the present invention provides a wafer carrier for carrying at least one wafer, comprising: the at least one heating unit comprises at least one heating coil and is used for heating the wafer carried by the wafer carrying disc; an insulating heat conduction unit arranged on the heating unit; and the electric conduction part is arranged on the insulating heat conduction unit and is electrically connected with a bias power supply, wherein the insulating heat conduction unit is positioned between the heating unit and the electric conduction part and electrically isolates the heating unit and the electric conduction part.
The present invention provides another thin film deposition apparatus, comprising: a cavity body comprising an accommodating space; a wafer carrier, which is located in the accommodating space and is used for carrying at least one wafer, comprising: the at least one heating unit comprises at least one heating coil and is used for heating the wafer carried by the wafer carrying disc; a conductive part above the heating unit and electrically connected with a bias power supply, wherein the bias power supply is used for forming a bias voltage on the conductive part; the insulating heat conduction unit is positioned between the heating unit and the electric conduction part and is used for isolating the heating unit and the electric conduction part; and at least one gas inlet fluidly connected to the chamber and configured to deliver a process gas to the chamber.
The wafer carrying disc comprises a wafer carrying disc body, wherein the heating coil comprises a first heating coil and a second heating coil, and the second heating coil is positioned at the periphery of the first heating coil.
The wafer carrying disc comprises a plurality of temperature sensing units, wherein the first heating coil and the second heating coil are respectively used for heating a first area and a second area of the wafer carrying disc, and the temperatures of the first area and the second area of the wafer carrying disc are respectively measured through the temperature sensing units.
The wafer bearing disc and the thin film deposition device comprise a supporting piece which is connected with the wafer bearing disc, at least one first conductive unit is arranged in the supporting piece and is electrically connected with a bias power supply and a conductive part, and the bias power supply forms a bias voltage on the conductive part through the first conductive unit.
The wafer carrying disc is characterized in that the bias power supply is an alternating current power supply, and an alternating current bias voltage is formed on the conductive part through the conductive unit.
The wafer carrying disc comprises at least one second conductive unit which is positioned in the supporting piece and is electrically connected with the heating coil.
The thin film deposition device comprises at least one second conductive unit positioned in the support piece and electrically connected with the heating coil, wherein the heating coil comprises a first heating coil and a second heating coil, and the second heating coil is positioned at the periphery of the first heating coil.
The thin film deposition device comprises a driving unit which is connected with the supporting piece and drives the wafer bearing disc to move through the supporting piece.
Drawings
FIG. 1 is a schematic cross-sectional view of one embodiment of a wafer carrier of the present invention.
Fig. 2 and 3 are schematic cross-sectional views of a thin film deposition apparatus using a wafer carrier in accordance with an embodiment of the present invention.
Reference numerals illustrate: 10-wafer carrier tray; 11-a heating unit; 115-cooling channels; 12-wafer; 13-an insulating heat conducting unit; 14-heating coils; 141-a first heating coil; 143-a second heating coil; 15-a conductive part; 161-base; 1611-a first annular connection; 1612-a first annular seal; 1613-a second annular connector; 1614-a second annular seal; 1615-a third annular connector; 1617-an annular protrusion; 163-fixing base; 1631-annular protrusions; 17-a support; 171-a first conductive element; 173-a second conductive unit; 175-bias power supply; 177-a first temperature sensing unit; 179-a second temperature sensing unit; 20-a thin film deposition apparatus; 21-a cavity; 211-air inlet; 212-a material inlet and a material outlet; 213-top plate; 215-lower cavity; 217-insulating part; 24-target material; 25-a ring-shaped member; 26-accommodating space; 261-reaction space; 27-a stopper; 271-an annular flange; 28-a drive unit; 29-a cover ring; a1-a first region; a2-second region.
Detailed Description
Fig. 1 is a schematic cross-sectional view of a wafer carrier in accordance with an embodiment of the present invention. As shown in the figure, the wafer carrier 10 is configured to carry at least one wafer 12, and mainly includes at least one heating unit 11, an insulating and heat-conducting unit 13, and an electrically conductive portion 15, wherein the heating unit 11, the insulating and heat-conducting unit 13, and the electrically conductive portion 15 may be disk-shaped.
The heating unit 11, the insulating and heat conducting unit 13 and the conductive portion 15 are stacked, wherein the conductive portion 15 is closest to the wafer 12 carried by the wafer carrier 10, and the heating unit 11 is farthest from the wafer 12. The insulating and heat conducting unit 13 is located between the heating unit 11 and the conductive portion 15, and is used for electrically isolating the heating unit 11 and the conductive portion 15.
The heating unit 11 includes at least one heating coil 14, and in use, an alternating current is supplied to the heating coil 14 such that the heating coil 14 generates an induced magnetic field and heats the wafer carrier 10 via the induced magnetic field. In an embodiment of the present invention, the wafer carrier 10, the heating unit 11 or the conductive portion 15 may be provided with a conductive layer (not shown), for example, the conductive layer may be a metal layer and adjacent to the heating coil 14, wherein an induced magnetic field generated by the heating coil 14 forms eddy currents on the conductive layer, and the eddy currents react with the resistance of the conductive layer, so that the conductive layer and/or the heating unit 11 generates heat to heat the wafers 12 carried by the wafer carrier 10.
The insulating and heat conducting unit 13 is located on the heating unit 11, and the conductive portion 15 is disposed on the insulating and heat conducting unit 13, wherein the conductive portion 15 is closest to or directly contacts the wafer 12 carried by the wafer carrier 10. In practice, the conductive portion 15 may be electrically connected to a bias power source 175, and a bias voltage is formed on the conductive portion 15 through the bias power source 175. The bias power source 175 may be an ac power source or a dc power source, and is used to form an ac bias or a dc bias on the conductive portion 15.
The bias on the conductive portion 15 is used to attract the plasma over the wafer carrier 10 and the wafer 12 so that a thin film is deposited on the surface of the wafer 12. Specifically, the conductive portion 15 may be metal and is used to carry at least one wafer 12, for example, the conductive portion 15 may be a titanium disk.
The insulating and heat conducting unit 13 is disposed on the heating unit 11 and located between the heating unit 11 and the electric conducting portion 15, wherein the insulating and heat conducting unit 13 is a material having heat conducting and insulating properties, such as alumina.
When the insulated conductive portion 13 is not provided, the ac current on the heating coil 14 may be transferred to the conductive portion 15, thereby affecting the bias voltage on the conductive portion 15, so that the bias power supply 175 cannot form a stable ac bias or dc bias on the conductive portion 15. In this way, the conductive portion 15 cannot stably attract the plasma above the wafer 12, and it is also disadvantageous to form a thin film having a uniform thickness on the surface of the wafer 12.
In order to solve the above-mentioned problems, the present invention proposes to provide an insulating heat conducting unit 13 between the heating unit 11 and the electric conducting portion 15, and to electrically isolate the heating unit 11 and the electric conducting portion 15 through the provision of the insulating heat conducting unit 13. The ac current on the heating coil 14 of the heating unit 11 cannot pass through the insulating heat conducting unit 13 and cannot be transferred to the conductive portion 15, so that the bias power supply 175 can form a stable dc bias or ac bias on the conductive portion 15 to stably attract the plasma above the wafer 12, which is beneficial to forming a thin film with uniform thickness on the surface of the wafer 12.
In one embodiment of the present invention, when the bias power supply 175 provides the bias voltage of 70V to the conductive portion 15, if the interference of the heating coil 14 to the conductive portion 15 is not isolated, the bias power supply 175 may not form the bias voltage of 70V on the conductive portion 15, even if the bias power supply 175 can form a sufficient bias voltage on the conductive portion 15, the bias voltage of the conductive portion 15 may fluctuate in a 20V interval, so that the bias voltage on the conductive portion 15 is unstable. On the contrary, if the insulating heat conducting unit 13 is disposed between the conductive portion 15 and the heating unit 11, the bias power supply 175 may form a bias voltage of 70V on the conductive portion 15, wherein a fluctuation interval of the bias voltage on the conductive portion 15 may be less than 10V, so that the conductive portion 15 has a stable bias voltage.
Specifically, the insulating and heat conducting unit 13 can also avoid the influence of the dc bias or ac bias on the conductive portion 15 on the ac current of the heating coil 14, so that the heating coil 14 can stably control the temperature of the wafer carrier 10 and the wafer 12 carried thereby, thereby improving the quality of thin film deposition.
The insulating and heat conducting unit 13 has a heat conducting property, so that heat generated by the heating unit 11 can be conducted to the electric conducting part 15 through the insulating and heat conducting unit 13, and the temperature of the wafer 12 carried by the wafer carrying tray 10 is increased through the high electric conducting part 15.
The wafer carrier 10 may be coupled to a support 17 and coupled to the wafer carrier 10 via the support 17. In an embodiment of the present invention, at least one first conductive unit 171 may be disposed in the supporting member 17, wherein the first conductive unit 171 is electrically connected to the conductive portion 15 and the bias power source 175, and may transmit an ac bias or a dc bias provided by the bias power source 175 to the conductive portion 15.
In addition, at least one second conductive unit 173 may be disposed in the support 17, wherein the second conductive unit 173 is electrically connected to the heating coil 14. In practical application, an ac current may be transmitted to the heating coil 14 through the second conductive unit 173 to raise the temperature of the heating unit 11.
In an embodiment of the present invention, the heating coil 14 of the heating unit 11 includes a first heating coil 141 and a second heating coil 143, wherein the second heating coil 143 is located at the periphery of the first heating coil 141. In addition, the first heating coil 141 and the second heating coil 143 may be connected to different second conductive units 173, and ac currents with different magnitudes and/or frequencies may be respectively provided to the first heating coil 141 and the second heating coil 143 to adjust the temperature of the heating unit 11 in a partitioned manner.
Specifically, the first heating coil 141 and the second heating coil 143 may be used to heat and/or adjust the temperature of a first area A1 and a second area A2 of the heating unit 11, the conductive portion 15, and/or the wafer carrier 10, respectively, for example, the first area A1 is located at or near the inner ring of the heating unit 11, the conductive portion 15, and/or the wafer carrier 10, and the second area A2 is located at or near the outer ring of the heating unit 11, the conductive portion 15, and/or the wafer carrier 10.
The wafer carrier 10 includes a plurality of temperature sensing units 177/179, for example, at least one first temperature sensing unit 177 and at least one second temperature sensing unit 179 are used to measure the temperatures of the heating unit 11, the conductive portion 15 and/or the first area A1 and the second area A2 of the wafer carrier 10.
The first temperature sensing unit 177 and the second temperature sensing unit 179 are used for measuring the temperatures of different areas of the heating unit 11, the conductive portion 15 and/or the wafer carrier 10, and changing the current supplied to the first heating coil 141 and the second heating coil 143, respectively, so that the temperatures of different areas of the heating unit 11, the conductive portion 15 and/or the wafer carrier 10 can be adjusted, and the temperatures of the different areas of the heating unit 11, the conductive portion 15 and/or the wafer carrier 10 can be the same or similar.
In an embodiment of the present invention, the wafer carrier 10 may include at least a base 161 and a fixing base 163, wherein the base 161 is used for connecting the heating unit 11, and the fixing base 163 is used for carrying and fixing the base 161.
Specifically, the base 161 may include a plurality of annular connectors, such as a first annular connector 1611, a second annular connector 1613, and a third annular connector 1615, wherein the support 17 is disposed in an opening of the first annular connector 1611, the first annular connector 1611 is disposed in an opening of the second annular connector 1613, and the second annular connector 1613 is disposed in an opening of the third annular connector 1615. In other words, the base 161 can be formed by a combination of the first annular connector 1611, the second annular connector 1613 and the third annular connector 1615. Of course, the base 161 including three connectors 1611/1613/1615 is merely an example of the present invention and is not intended to limit the scope of the claims.
In one embodiment of the present invention, the edge of the base 161 has an annular protrusion 1617, wherein a radially inner region of the annular protrusion 1617 may form a recess, and the heating unit 11 may be placed in the recess of the base 161, and the annular protrusion 1617 is located around the heating unit 11.
The fixing base 163 may be a single member, and the edge of the fixing base 163 may have an annular protrusion 1631, wherein a radially inner region of the annular protrusion 1631 of the fixing base 163 may form a groove, and the base 161 may be disposed in the groove of the fixing base 163, such that the annular protrusion 1631 of the fixing base 163 is located around the base 161.
In an embodiment of the invention, the upper surface and the lower surface of the first annular connecting member 1611 of the base 161 closest to the inner ring may be respectively provided with a first annular sealing member 1612 and a second annular sealing member 1614, such as an O-ring, wherein the first annular sealing member 1612 of the upper surface of the first annular connecting member 1611 contacts the heating unit 11, and the second annular sealing member 1614 of the lower surface of the first annular connecting member 1611 contacts the fixing base 163. In practical application, the heating unit 11 and the fixing base 163 are closely attached to the base 161 and/or the first annular connecting member 1611 due to pressure differences of various areas.
The first annular seal 1612 of the upper surface of the first annular connector 1611 is in closer proximity to or in direct contact with the heating unit 11, which may cause degradation of the first annular seal 1612 over time. To avoid degradation of the first annular seal 1612, at least one cooling channel 115 may be further disposed above the first annular seal 1612, and the heating unit 11 and the first annular seal 1612 may be isolated through the cooling channel 115 to cool the first annular seal 1612.
Referring to FIG. 2, a schematic cross-sectional view of a thin film deposition apparatus using a wafer carrier in accordance with an embodiment of the present invention is shown. As shown, the thin film deposition apparatus 20 mainly includes at least one wafer carrier 10 and a chamber 21, wherein the chamber 21 includes a receiving space 26, and the wafer carrier 10 is disposed in the receiving space 26 and is used for carrying at least one wafer 12.
In one embodiment of the present invention, the thin film deposition apparatus 20 may be a physical vapor deposition apparatus, and a target 24 is disposed in the chamber 21, wherein the target 24 faces the wafer carrier 10 and/or the wafer 12. In an embodiment of the present invention, the cavity 21 may include a top plate 213 and a lower cavity 215, wherein the top plate 213 is connected to the lower cavity 215 through an insulating portion 217 to form a receiving space 26 therebetween, and the target 24 is disposed on the top plate 213 and faces the wafer carrier 10 and/or the wafer 12.
The chamber 21 is provided with at least one gas inlet 211, wherein the gas inlet 211 is fluidly connected to the accommodating space 26 of the chamber 21 and is used for delivering a process gas into the accommodating space 26 for performing a deposition process, such as an inert gas or a reactive gas. In addition, an air extraction opening may be provided on the chamber 21, and the air in the chamber 21 may be extracted through the air extraction opening by a pump.
The ring member 25 is disposed on the wafer carrier 10 and around the wafer 12. The baffle 27 is disposed in the accommodating space 26 of the cavity 21 and located in the surrounding area of the wafer carrier tray 10. Specifically, one end of the stopper 27 is connected to the cavity 21, and the other end forms an opening. In one embodiment of the invention, the end of the baffle 27 not connected to the cavity 21 may form an annular flange 271, wherein the annular flange 271 is located around the opening of the baffle 27 and the cover ring 29 may be disposed over the annular flange 271 of the baffle 27.
The chamber 21 may include a feed port 212 for transporting the wafer 12. The driving unit 28 may be connected to the support 17 and drive the wafer carrier tray 10 away from the stopper 27 through the support 17, as shown in fig. 2. Then, the wafer 12 can be placed on the wafer carrier 10 through the inlet/outlet 212 by a robot arm, and the robot arm can also take out the wafer 12 carried by the wafer carrier 10 from the cavity 21 through the inlet/outlet 212.
When the robot arm places the wafer 12 on the wafer carrier 10, the driving unit 28 drives the wafer carrier 10 and the wafer 12 to move toward the stopper 27 through the supporting member 17, so that the ring member 25 on the wafer carrier 10 contacts the cover ring 29 on the stopper 27, and the stopper 27 and the cover ring 29 are disposed around the wafer 12, as shown in fig. 3. The baffle 27, the cover ring 39, the wafer carrier 10, the wafer 12 and/or the ring member 25 divide the accommodating space 26 of the chamber 21 into two parts, wherein the space between the baffle 27, the cover ring 29, the wafer carrier 10, the ring member 25 and/or the chamber 21 can be defined as a reaction space 261, and the target 24 and the wafer 12 are located in the reaction space 261.
During the deposition process, the heating unit 11 of the wafer carrier 10 heats the wafer 12 and biases the top plate 213 and the wafer carrier 10, respectively, wherein the inert gas in the reaction space 261 forms ionized inert gas due to the high voltage electric field. The ionized inert gas is attracted by the bias on the target 24 to bombard the target 24, and target atoms or molecules sputtered from the target 24 are attracted by the bias on the wafer carrier 10 to deposit on the surface of the wafer 12.
Referring to fig. 1, the heating unit 11 and the conductive portion 15 of the wafer carrier 10 are isolated by the insulating and heat conducting unit 13, wherein the ac current of the heating coil 14 of the heating unit 11 is not transmitted to the conductive portion 15, so that the conductive portion 15 can form a stable ac bias or dc bias, and the quality of the deposited film on the surface of the wafer 12 can be improved.
In the embodiment of the present invention, a physical vapor deposition apparatus is used as an embodiment of the present invention, but the physical vapor deposition apparatus is not limited to the scope of the claims, and the wafer carrier 10 of the present invention can be applied to a chemical vapor deposition apparatus or an atomic layer deposition apparatus in practical application, basically, as long as the wafer carrier 10 of the thin film deposition apparatus needs to be heated and biased, the wafer carrier 10 of the present invention is applicable.
The foregoing description is only one preferred embodiment of the present invention and is not intended to limit the scope of the present invention, i.e., all equivalent variations and modifications in shape, construction, characteristics and spirit as defined in the appended claims should be construed as included in the present claims.

Claims (10)

1. A wafer carrier for carrying at least one wafer, comprising:
the heating unit comprises at least one heating coil and is used for heating the wafers carried by the wafer carrying disc;
an insulating heat conduction unit arranged on the heating unit;
a base for carrying the heating unit, the base comprising a first annular connector; wherein a first annular seal is disposed between the first annular connector and the heating unit; a kind of electronic device with high-pressure air-conditioning system
A cooling channel between the first annular seal and the heating unit and isolating the heating unit from the first annular seal;
the electric conduction part is arranged on the insulating heat conduction unit and is electrically connected with a bias power supply, wherein the insulating heat conduction unit is positioned between the heating unit and the electric conduction part and electrically isolates the heating unit and the electric conduction part.
2. The wafer carrier of claim 1, wherein the heating coil comprises a first heating coil and a second heating coil, wherein the second heating coil is located at a periphery of the first heating coil.
3. The wafer carrier of claim 2, comprising a plurality of temperature sensing units, wherein the first heating coil and the second heating coil are configured to heat a first region and a second region of the wafer carrier, respectively, and to measure temperatures of the first region and the second region of the wafer carrier, respectively, through the temperature sensing units.
4. The wafer carrier of claim 1, comprising a support coupled to the wafer carrier, wherein at least a first conductive element is disposed within the support and electrically coupled to the bias power source and the conductive portion, wherein the bias power source forms a bias voltage at the conductive portion via the first conductive element.
5. The wafer carrier of claim 4, wherein the bias power source is an ac power source and an ac bias is formed on the conductive portion via the conductive unit.
6. The wafer carrier of claim 4, comprising at least one second conductive element disposed within the support member and electrically coupled to the heating coil.
7. A thin film deposition apparatus, comprising:
a cavity body comprising an accommodating space;
a wafer carrying tray, which is located in the accommodating space and is used for carrying at least one wafer, comprising:
the heating unit comprises at least one heating coil and is used for heating the wafers carried by the wafer carrying disc;
a conductive part above the heating unit and electrically connected with a bias power supply, wherein the bias power supply is used for forming a bias voltage on the conductive part; a kind of electronic device with high-pressure air-conditioning system
An insulating heat conduction unit, located between the heating unit and the electric conduction part, for isolating the heating unit and the electric conduction part;
a base for carrying the heating unit, the base comprising a first annular connector; wherein a first annular seal is disposed between the first annular connector and the heating unit;
a cooling channel between the first annular seal and the heating unit and isolating the heating unit from the first annular seal; a kind of electronic device with high-pressure air-conditioning system
At least one gas inlet is in fluid connection with the accommodating space of the cavity and is used for conveying a process gas to the accommodating space.
8. The thin film deposition apparatus according to claim 7, comprising a support member connected to the wafer carrier, wherein at least a first conductive unit is disposed in the support member and electrically connected to the bias power supply and the conductive portion, and the bias power supply forms the bias voltage on the conductive portion via the first conductive unit.
9. The thin film deposition apparatus of claim 8, comprising at least one second conductive unit disposed within the support member and electrically connected to the heating coil, wherein the heating coil comprises a first heating coil and a second heating coil disposed at a periphery of the first heating coil.
10. The thin film deposition apparatus according to claim 8, comprising a driving unit connected to the supporting member and driving the wafer carrier to move by the supporting member.
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WO1991002105A1 (en) * 1989-08-11 1991-02-21 Thomson Tubes Electroniques Device for depositing a material on a heat-conducting substrate
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JP2019071350A (en) * 2017-10-10 2019-05-09 住友電気工業株式会社 Heater unit for wafer heating
CN215481237U (en) * 2021-02-26 2022-01-11 鑫天虹(厦门)科技有限公司 Wafer bearing disc and thin film deposition device applying same

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US10595365B2 (en) * 2010-10-19 2020-03-17 Applied Materials, Inc. Chamber lid heater ring assembly

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Publication number Priority date Publication date Assignee Title
WO1991002105A1 (en) * 1989-08-11 1991-02-21 Thomson Tubes Electroniques Device for depositing a material on a heat-conducting substrate
CN101093811A (en) * 2006-04-27 2007-12-26 应用材料股份有限公司 Substrate support with electrostatic chuck having dual temperature zones
CN105474382A (en) * 2014-02-07 2016-04-06 应用材料公司 Pixelated temperature controlled substrate support assembly
JP2019071350A (en) * 2017-10-10 2019-05-09 住友電気工業株式会社 Heater unit for wafer heating
CN215481237U (en) * 2021-02-26 2022-01-11 鑫天虹(厦门)科技有限公司 Wafer bearing disc and thin film deposition device applying same

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