CN114959559B - Semiconductor process equipment and upper electrode mechanism thereof - Google Patents

Semiconductor process equipment and upper electrode mechanism thereof Download PDF

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Publication number
CN114959559B
CN114959559B CN202210586343.5A CN202210586343A CN114959559B CN 114959559 B CN114959559 B CN 114959559B CN 202210586343 A CN202210586343 A CN 202210586343A CN 114959559 B CN114959559 B CN 114959559B
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plate
upper electrode
target
introducing
rod
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CN114959559A (en
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武树波
郭冰亮
张超
杨健
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The embodiment of the application provides semiconductor process equipment and an upper electrode mechanism thereof. The upper electrode mechanism includes: the power supply device, the feed-in component and the adjusting component; the feed-in assembly comprises an introduction rod, an introduction plate and a connecting rod, wherein two ends of the introduction rod are respectively connected with the power supply device and the introduction plate, and the introduction rod and the introduction plate are coaxially arranged; the plurality of connecting rods are uniformly distributed around the axis of the introducing rod, one end of each connecting rod is selectively connected with the introducing plate through the adjusting component, and the other end of each connecting rod is connected with the target; the adjusting assembly comprises a plurality of adjusting blocks, the adjusting blocks are arranged in one-to-one correspondence with the connecting rods and are used for selectively connecting the connecting rods with the leading-in plates, so that the leading-in plates can provide power for the target through the connecting rods. The embodiment of the application realizes the adjustment of the uniformity of the receiving power of the target, so that the power received by the target is more uniform, and the uniformity of the film thickness is improved.

Description

Semiconductor process equipment and upper electrode mechanism thereof
Technical Field
The application relates to the technical field of semiconductor processing, in particular to semiconductor process equipment and an upper electrode mechanism thereof.
Background
Currently, in the logic power and storage fields, a chemical vapor deposition process is required to deposit a tungsten film, and the tungsten film is used as a barrier layer in an aluminum wiring process. A layer of titanium nitride (TiN) film is often required as a barrier layer prior to depositing the tungsten film, a process flow that has been validated in the industry. However, the adhesion between the titanium nitride (TiN) film and the deep holes on the wafer is poor, and the titanium film is deposited by adopting a physical vapor deposition process as an adhesive layer, so that the problems can be effectively solved. To obtain good titanium films in deep holes, it is necessary to apply both dc power and very high frequency (Very high frequency, VHF) rf power to the titanium target. However, factors such as the introduction mode of the direct current power and the radio frequency power or other interference in the introduction process can directly influence whether the direct current power and the radio frequency power are uniformly distributed on the titanium target material, thereby influencing the uniformity of the thickness of the titanium film.
In the prior art, although the direct current power and the radio frequency power are both fed to the target material by adopting the center, the metal gear box of the magnetron device is biased with the target material, so that the coupling phenomenon of the metal gear box and the radio frequency power is caused, the direct current power and the radio frequency power distribution of the target material are influenced, and the thickness uniformity of a deposited film is further caused to be eccentric.
Disclosure of Invention
Aiming at the defects of the prior art, the application provides semiconductor process equipment and an upper electrode mechanism thereof, which are used for solving the technical problem that the direct current power and the radio frequency power of a target are unevenly distributed due to the bias of a metal gear box in the prior art.
In a first aspect, an embodiment of the present application provides an upper electrode mechanism of a semiconductor processing apparatus, including: the power supply device, the feed-in component and the adjusting component; the feed-in assembly comprises an introduction rod, an introduction plate and a connecting rod, wherein two ends of the introduction rod are respectively connected with the power supply device and the introduction plate, and the introduction rod and the introduction plate are coaxially arranged; a plurality of the connecting rods are uniformly distributed around the axis of the introducing rod, one end of each connecting rod is selectively connected with the introducing plate through the adjusting assembly, and the other end is used for being connected with a target; the adjusting assembly comprises a plurality of adjusting blocks, the adjusting blocks are arranged in one-to-one correspondence with the connecting rods and are used for selectively connecting the connecting rods with the leading-in plates, so that the leading-in plates can provide power for the target through the connecting rods.
In an embodiment of the application, the feed-in assembly further includes a support sleeve, one end of the support sleeve is used for installing the lead-in plate, the lead-in plate is arranged in an insulating manner with the support sleeve, and the other end of the support sleeve is used for installing the target; the connecting rods penetrate through the side walls of the supporting sleeve.
In an embodiment of the present application, a partition plate extending in a radial direction is formed in the support sleeve, and a mounting hole eccentrically arranged with the support sleeve is formed on the partition plate for mounting a transmission component of the magnetron device; and a plurality of connection rods located at the mounting holes are not connected with the introduction plate through the adjustment block.
In an embodiment of the present application, the plurality of adjusting blocks are circumferentially disposed around the outer circumference of the supporting sleeve, and the first ends of the adjusting blocks are connected with the introducing plate, and the second ends of the adjusting blocks extend into the side wall of the supporting sleeve to be connected with the connecting rod.
In an embodiment of the application, a plurality of mounting grooves are formed in the peripheral wall at the top end of the supporting sleeve, the mounting grooves are used for exposing part of the peripheral wall of the connecting rod, and the second ends of the adjusting blocks are located in the mounting grooves and connected with the peripheral wall of the connecting rod.
In an embodiment of the application, the adjusting assembly further comprises a fastener, and the first end of the adjusting block is connected with the periphery of the introducing plate through the fastener; the second end of the adjusting block is connected with the peripheral wall of the connecting rod through the fastening piece.
In an embodiment of the application, the feed-in assembly further includes an insulation ring and an introduction ring, the insulation ring is located between the support sleeve and the introduction plate, and one end of the connecting rod is fixedly connected with the insulation ring; the introducing ring is positioned between the supporting sleeve and the target, and the other end of the connecting rod is connected with the introducing ring and used for providing power for the target through the introducing ring.
In an embodiment of the application, the insulating ring is integrally formed or is formed by arranging a plurality of arc plates with the same specification at intervals.
In an embodiment of the application, the cross section of the connecting rod is circular or regular polygon.
In an embodiment of the present application, the power supply device includes a matcher, a first connection piece, a filter box, a second connection piece, a radio frequency power supply and a dc power supply, where the radio frequency power supply is connected with the introduction rod through the matcher and the first connection piece in sequence, and is used to provide radio frequency power to the target; the direct current power supply is connected with the first connecting piece through the filter box and the second connecting piece, and is connected with the introducing rod through the first connecting piece and is used for providing direct current power for the target.
In an embodiment of the application, the magnetron device further comprises a magnetron, a motor and an insulating coupling, wherein the magnetron is positioned below the partition board, and the transmission part is arranged in the mounting hole and is in transmission connection with the magnetron; the insulating coupler is arranged on the leading-in plate, and the motor is connected with the transmission part through the insulating coupler.
In an embodiment of the application, the upper electrode mechanism further includes a shielding sleeve and a shielding plate, and the shielding sleeve is sleeved on the periphery of the supporting sleeve; the shielding plate covers the top end of the shielding sleeve, the shielding sleeve is fixed to the top surface of the introducing plate through the insulating block, the introducing rod penetrates through the shielding plate to be connected with the introducing plate, and the motor penetrates through the shielding plate to be connected with the insulating coupling.
In an embodiment of the application, the upper electrode mechanism further includes a cooling pipeline, the cooling pipeline includes an input pipe and an output pipe, the partition plate is further provided with an input hole and an output hole, one end of the input pipe is used for being communicated with a cooling source, the other end of the input pipe passes through the shielding plate to be communicated with the input hole, the cooling medium is introduced into a space between the partition plate and the target, one end of the output pipe is communicated with the output hole, and the other end of the output pipe passes through the shielding plate to be used for discharging the cooling medium.
In a second aspect, an embodiment of the present application provides a semiconductor processing apparatus, including: a process chamber and an upper electrode mechanism as provided in the first aspect, wherein the upper electrode mechanism is disposed on top of the process chamber.
The technical scheme provided by the embodiment of the application has the beneficial technical effects that:
in the embodiment of the application, the plurality of connecting rods are connected with the leading-in plate through the adjusting component and are connected with the target, and the plurality of adjusting blocks are selectively arranged to enable part of connecting rods to be connected with the leading-in plate so as to load power to the target, and part of connecting rods are not connected with the leading-in plate so as to be incapable of loading power to the target, so that the uniformity of the power received by the target is adjusted, and the power received by the target is more uniform, thereby improving the uniformity of the film thickness. In addition, as the adjusting component can selectively connect the connecting rods with the leading-in plate, whether the connecting rods are connected with the leading-in plate or not can be flexibly adjusted according to requirements so as to transmit power, so that the adjusting flexibility can be improved, the application range and the applicability of the embodiment of the application can be greatly improved, and the application and maintenance cost can be further reduced.
Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The foregoing and/or additional aspects and advantages of the application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic cross-sectional view of an upper electrode mechanism according to an embodiment of the present application;
fig. 2A is a schematic perspective view of a support sleeve according to an embodiment of the present application;
FIG. 2B is a schematic cross-sectional view of a support sleeve according to an embodiment of the present application;
FIG. 2C is a schematic top view of an embodiment of a mating structure of an inlet plate and a support sleeve;
fig. 3A is a schematic cross-sectional view of a feed-in component and an adjusting component according to an embodiment of the present application;
FIG. 3B is a partially enlarged schematic cross-sectional view of a feedthrough assembly mated with an adjustment assembly in accordance with an embodiment of the present application;
FIG. 3C is a schematic cross-sectional view of another view of a feedthrough assembly in accordance with an embodiment of the present application;
FIG. 3D is an enlarged partial schematic view of a periphery of an intake plate according to an embodiment of the present application;
fig. 4A is a schematic front view of an adjusting block according to an embodiment of the present application;
FIG. 4B is a schematic cross-sectional view of an adjusting block according to an embodiment of the present application;
fig. 5A is a schematic cross-sectional view of a feed-in component according to an embodiment of the present application;
fig. 5B is an enlarged schematic view of a portion a of the feed-in component according to an embodiment of the present application;
fig. 5C is a schematic view of a three-dimensional structure of a connecting rod and an introducing ring according to an embodiment of the present application;
fig. 6A is a schematic top view of an insulating ring according to an embodiment of the present application;
FIG. 6B is a schematic view of a partial cross-sectional structure of an insulating ring according to an embodiment of the present application;
fig. 6C is a schematic top view of another insulating ring according to an embodiment of the present application;
fig. 7A is a schematic perspective view of a connecting rod according to an embodiment of the present application;
fig. 7B is a schematic cross-sectional structure of the connecting rod and the introducing ring according to the embodiment of the application.
Detailed Description
The present application is described in detail below, examples of embodiments of the application are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar components or components having the same or similar functions throughout. Further, detailed descriptions of known techniques are omitted if they are not necessary for the illustrated features of the present application. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The following describes the technical scheme of the present application and how the technical scheme of the present application solves the above technical problems in detail with specific embodiments.
The embodiment of the application provides an upper electrode mechanism of semiconductor process equipment, a structural schematic diagram of the upper electrode mechanism is shown in fig. 1, and the upper electrode mechanism comprises: a power supply device 1, a feed-in component 2 and a regulating component 3; the feed-in assembly 2 comprises a lead-in rod 21, a lead-in plate 22 and a connecting rod 23, wherein two ends of the lead-in rod 21 are respectively connected with the power supply device 1 and the lead-in plate 22, and the lead-in rod 21 and the lead-in plate 22 are coaxially arranged; a plurality of connection rods 23 are uniformly distributed around the axis of the introduction rod 21, and one end of each connection rod 23 is selectively connected to the introduction plate 22 through the adjustment assembly 3, and the other end is used for connection to the target 7; the adjusting assembly 3 includes a plurality of adjusting blocks 31, and the plurality of adjusting blocks 31 are arranged in one-to-one correspondence with the plurality of connecting rods 23, and are used for selectively connecting the connecting rods 23 with the introducing plate 22, so that the introducing plate 22 can provide power to the target 7 through the connecting rods 23.
As shown in fig. 1, the semiconductor processing apparatus may be used to perform a physical vapor deposition process, but the embodiment of the application is not limited thereto, and a person skilled in the art may adjust the setting according to the actual situation. The upper electrode mechanism includes a power supply device 1, a feeding component 2 and a regulating component 3, wherein the power supply device 1 can provide direct current power and/or radio frequency power, and the radio frequency power is, for example, very high frequency of 40MHz, but the embodiment of the application is not limited thereto. The feedthrough assembly 2 is used to load power from the power assembly 1 onto the target 7, with the feedthrough bar 21 coaxially disposed with the feedthrough plate 22 to achieve a center feedthrough. The plurality of connecting rods 23 are uniformly and alternately distributed around the axis of the introducing rod 21, and the specific number of the plurality of connecting rods 23 can be 16, 24 or 36, so that the setting can be automatically adjusted according to actual conditions by a person skilled in the art. The top ends of the plurality of the introducing rods 21 are selectively connected with the introducing plate 22 through the adjusting assembly 3, and the bottom ends are connected with the target 7. The adjusting assembly 3 comprises a plurality of adjusting blocks 31, and the number of the adjusting blocks 31 can be the same as the number of the connecting rods 23, that is, each connecting rod 23 is connected with the introducing plate 22 through the adjusting block 31, so that the power of the introducing plate 22 can be loaded on the target 7 through the plurality of connecting rods 23. When the power of the target 7 needs to be adjusted, for example, when the magnetron device 4 affects the uniformity of the power received by the target 7, a part of the connecting rods 23 can be connected with the lead-in plate 22 corresponding to the position of the magnetron device 4 without passing through the adjusting block 31, so that the power received by the target 7 is more uniform, and the uniformity of the film thickness is further improved. Due to the above design, the number of the adjusting blocks 31 may be smaller than the number of the connecting rods 23, so that a part of the connecting rods 23 is not connected with the introducing plate 22, but the embodiment of the present application is not limited to the specific number of the adjusting blocks 31, and a person skilled in the art can adjust the setting according to the actual situation.
In the embodiment of the application, the plurality of connecting rods are connected with the leading-in plate through the adjusting component and are connected with the target, and the plurality of adjusting blocks are selectively arranged to enable part of connecting rods to be connected with the leading-in plate so as to load power to the target, and part of connecting rods are not connected with the leading-in plate so as to be incapable of loading power to the target, so that the uniformity of the power received by the target is adjusted, and the power received by the target is more uniform, thereby improving the uniformity of the film thickness. In addition, as the adjusting component can selectively connect the connecting rods with the leading-in plate, whether the connecting rods are connected with the leading-in plate or not can be flexibly adjusted according to requirements so as to transmit power, so that the adjusting flexibility can be improved, the application range and the applicability of the embodiment of the application can be greatly improved, and the application and maintenance cost can be further reduced.
It should be noted that, in the embodiment of the present application, the magnetron device 4 is used for illustration, and the adjustment is not limited to the magnetron device 4, and any device disposed in the upper electrode mechanism may affect the receiving power of the target 7 may be adjusted by the adjusting component 3 in cooperation with the connecting rod 23. Therefore, the embodiment of the application is not limited to this, and the person skilled in the art can adjust the setting according to the actual situation.
In an embodiment of the present application, as shown in fig. 1 to 2C, the feedthrough assembly 2 further includes a support sleeve 24, one end of the support sleeve 24 is used for installing the lead-in plate 22, and the lead-in plate 22 is insulated from the support sleeve 24, and the other end of the support sleeve 24 is used for installing the target 7; a plurality of connecting rods 23 are provided penetrating the side walls of the support sleeve 24. Specifically, the support sleeve 24 may be made of an insulating material such as resin, the top end of the support sleeve 24 may be used for mounting the introduction plate 22, the support sleeve 24 is coaxially disposed with the introduction plate 22 for mounting the plurality of connection rods 23, and the support sleeve 24 can shield interference of other metal parts to the connection rods 23. To avoid direct contact of the connecting rod 23 with the inlet plate 22, an insulating material may be used to isolate the top end of the support sleeve 24 from the inlet plate 22. The bottom end of the support sleeve 24 may be used to mount the target 7, e.g. the target 7 may nest inside the bottom end of the support sleeve 24. Further, the side wall of the supporting sleeve 24 may be provided with a plurality of holes penetrating along the axial direction, and the plurality of connecting rods 23 are disposed in the plurality of holes in a one-to-one correspondence manner. By adopting the design, the embodiment of the application has simple structure, and can avoid the interference of the connecting rod 23, thereby further improving the uniformity of the receiving power of the target 7.
In an embodiment of the present application, as shown in fig. 1 to 2B, a partition plate 241 extending in a radial direction is formed in the support sleeve 24, and a mounting hole 242 eccentrically disposed with respect to the support sleeve 24 is formed in the partition plate 241 for mounting the transmission member 42 of the magnetron device 4; and the plurality of connection rods 23 located at the mounting holes 242 are not connected to the introduction plate 22 through the adjustment block 31. Specifically, the partition 241 has a circular plate-like structure, and the peripheral edge of the partition 241 and the inner peripheral wall of the support sleeve 24 may be integrally formed. The center of the partition plate 241 is provided with a mounting hole 242 toward the left, and the mounting hole 242 is used for mounting the transmission member 42 of the magnetron device 4, and the transmission member 42 is a gear box made of metal, so that the radio frequency power of the introducing plate 22 and the target 7 is unevenly distributed, and the uniformity of the film thickness on the surface of the wafer is eccentric. For the above reasons, the connection rod 23 at the mounting hole 242 is not connected to the introduction plate 22 through the adjustment block 31, but the connection rod 23 except the mounting hole 242 is connected to the introduction plate 22 through the adjustment block 31, so that the non-uniform rf power of the introduction plate 22 is uniformly conducted to the target 7 through the adjustment block 31 and the connection rod 23. By adopting the design, the adjusting of the embodiment of the application is simple and quick, and the plurality of connecting rods 23 can be adjusted in the circumferential direction of the supporting sleeve 24, so that the applicability and the application range of the embodiment of the application are further improved.
The embodiment of the present application is not limited to the specific position of the mounting hole 242, as long as the mounting hole 242 is disposed eccentrically to the partition 241. Therefore, the embodiment of the application is not limited to this, and the person skilled in the art can adjust the setting according to the actual situation.
In an embodiment of the present application, as shown in fig. 3A to 3B, a plurality of adjusting blocks 31 are circumferentially disposed around the outer circumference of the support sleeve 24, and a first end of the adjusting block 31 is connected to the introducing plate 22, and a second end of the adjusting block 31 extends into a sidewall of the support sleeve 24 to be connected to the connecting rod 23. Specifically, the adjusting block 31 may be disposed around the outer circumference of the support sleeve 24, where the top end of the adjusting block 31 is a first end and the bottom end is a second end, and the first end of the adjusting block 31 is connected with the periphery of the introducing plate 22, and the second end may extend into the sidewall of the support sleeve 24 to be connected with the connecting rod 23, i.e. the top end of the connecting rod 23 is not in contact with the introducing plate 22, so as to avoid the influence of the connecting rod 23 on the radio frequency power of the introducing plate 22 and the target 7. In practical application, the adjusting block 31 is selectively arranged between the leading-in plate 22 and the connecting rod 23, so that the connecting rod 23 is selectively connected with the leading-in plate 22, and the uniformity of the receiving power of the target 7 is adjusted. By adopting the design, the embodiment of the application has simple structure, thereby greatly reducing the application and maintenance cost.
In an embodiment of the present application, as shown in fig. 2A to 3B, a plurality of mounting grooves 243 are formed on the peripheral wall of the top end of the supporting sleeve 24, the mounting grooves 243 are used for exposing a part of the peripheral wall of the connecting rod 23, and the second end of the adjusting block 31 is located in the mounting grooves 243 and is connected with the peripheral wall of the connecting rod 23. Specifically, the top end of the supporting sleeve 24 is provided with a plurality of mounting grooves 243, the plurality of mounting grooves 243 are disposed in one-to-one correspondence with the plurality of connecting rods 23, and the mounting grooves 243 may be located between the top surface and the outer side surface of the side wall of the supporting sleeve 24, or only open on the outer side surface of the side wall of the supporting sleeve 24. Since the connecting rod 23 is inserted into the side wall of the supporting sleeve 24, the mounting groove 243 exposes a portion of the peripheral wall of the connecting rod 23, so that the second end of the adjusting block 31 can be conveniently contacted and connected with the peripheral wall of the connecting rod 23. With the above design, the second end of the adjusting block 31 can be accommodated in the mounting groove 243, so that the position of the adjusting block 31 is limited and carried when the adjusting block 31 is mounted, and the falling off of the adjusting block 31 is avoided, so that the dismounting and maintenance efficiency is greatly improved. In addition, the design can save the space occupation of the feed-in assembly 2 and the adjusting assembly 3, thereby avoiding interference with other components. Further, referring to fig. 3D, a plurality of accommodating grooves 221 are formed on the periphery of the introducing plate 22, the plurality of accommodating grooves 221 and the plurality of mounting grooves 243 are arranged in a one-to-one correspondence, and the accommodating grooves 221 are used for accommodating the top of the adjusting block 31, so that the space occupation of the feeding component 2 and the adjusting component 3 is further reduced, and the disassembly, assembly and maintenance efficiency is further improved.
In one embodiment of the present application, as shown in fig. 3A to 4B, the adjusting assembly 3 further includes a fastener 32, and the first end of the adjusting block 31 is connected to the periphery of the introducing plate 22 through the fastener 32; the second end of the adjustment block 31 is connected to the peripheral wall of the connecting rod 23 by a fastener 32.
As shown in fig. 3A to 4B, the adjusting block 31 may be an L-shaped metal block, and also has a protrusion at a first end, the protrusion at a second end of the adjusting block 31 is located in the mounting groove 243 of the support sleeve 24, and the protrusion at the first end is located in the receiving groove 221 of the introducing plate 22. The first end and the second end of the adjusting block 31 are respectively provided with a fixing hole 311, and the peripheral wall of the connecting rod 23 and the accommodating groove 221 are respectively provided with threaded holes, and the first end and the second end of the adjusting block 31 are respectively connected with the connecting rod 23 and the introducing plate 22 through a fastener 32. The fastener 32 may be implemented by a screw, but the embodiment of the present application is not limited thereto, so long as the detachable connection of the adjusting block 31 can be implemented. By adopting the design, the embodiment of the application is simple and quick to adjust, and the stability among the introducing plate 22, the adjusting block 31 and the connecting rod 23 can be improved, so that the safety of the application is improved, and the application and maintenance cost can be greatly reduced. However, the structure of the adjusting block 31 is not limited in the embodiment of the present application, for example, the adjusting block 31 may be in a rectangular rod structure, or may be in a "C" sheet structure, etc., so the embodiment of the present application is not limited thereto, and a person skilled in the art may adjust the setting according to the actual situation.
Further, as shown in fig. 1 to 2C in combination, the introducing plate 22 is provided with symmetrically arranged through holes 222 (in order to make the whole structure of the introducing plate 22 symmetrical, avoid the uniformity deterioration caused by the arrangement of one through hole), wherein the left through hole 222 is arranged on the same side as the mounting hole 242 on the partition 241, the corresponding position above the through hole 222 is used for mounting the motor 43 of the magnetron device 4, and the output shaft of the motor 43 is in transmission connection with the transmission member 42 below the through hole 222. Therefore, when the plurality of connecting rods 23 need to be adjusted, the plurality of adjusting blocks 31 at the through holes 222 need to be removed, and referring specifically to fig. 2C, the positions of the plurality of adjusting blocks 31 are marked by letters a-x in the drawing, and the adjusting blocks 31 from R to T should be removed in combination with the above description, so that the adjustment of the power transmission path can be conveniently and effectively realized under the condition that the transmission component 42 is biased, thereby improving the distribution uniformity of the direct current power or the radio frequency power on the target 7, and effectively solving the problem of the uniformity of the thickness of the sputtered film being eccentric.
In an embodiment of the present application, as shown in fig. 1, 5A to 5C, the feeding element 2 further includes an insulation ring 25 and an introduction ring 26, the insulation ring 25 is located between the support sleeve 24 and the introduction plate 22, and one end of the connecting rod 23 is fixedly connected with the insulation ring 25; an introduction ring 26 is located between the support sleeve 24 and the target 7, and the other end of the connection rod 23 is connected to the introduction ring 26 for supplying power to the target 7 through the introduction ring 26.
As shown in fig. 5A to 5C, the insulating ring 25 may be made of an insulating material such as resin, and the insulating ring 25 is positioned at the top end of the supporting sleeve 24 to support the inlet plate 22 and to isolate the inlet plate 22 from the connecting rod 23, thereby preventing the connecting rod 23 from interfering with the inlet plate 22, which means that the connecting rod 23 is not connected to the inlet plate 22 through the adjusting block 31. The introducing ring 26 is disposed at the bottom end of the supporting sleeve 24 for installing the target 7, and the plurality of connecting rods 23 are connected with the introducing ring 26 to further improve the uniformity of the power received by the target 7. In practical applications, the bottom ends of the plurality of connecting rods 23 may be connected to the introducing ring 26, for example, by screwing, that is, the bottom ends of the connecting rods 23 are directly connected to threaded holes on the introducing ring 26, as shown in fig. 5C. The support sleeve 24 is then mounted over the lead-in ring 26 with the plurality of connecting rods 23 extending into the side walls of the support sleeve 24; the insulating ring 25 is then covered on the top end of the supporting sleeve 24, and a plurality of screws are used to pass through the insulating ring 25 and then connect with the top end of the connecting rod 23. By adopting the design, the embodiment of the application has simple structure, thereby greatly improving the disassembly, assembly and maintenance efficiency. However, the embodiment of the present application is not limited to the connection manner between the above components, and a person skilled in the art may adjust the arrangement according to the actual situation.
In an embodiment of the present application, as shown in fig. 6A to 6C, the insulating ring 25 is formed by a single body or a plurality of arc plates 251 with the same specification are arranged at intervals. Specifically, the insulating ring 25 may adopt an integral structure, so that the insulating ring 25 has a simple structure, thereby greatly improving the disassembly and maintenance efficiency. In another embodiment, the insulating ring 25 includes eight arc plates 251 with the same shape and size, and the eight arc plates 251 are arranged at intervals to form the insulating ring 25, so that the manufacturing cost of the insulating ring 25 can be lower by adopting the design, thereby saving the application and maintenance costs. However, the embodiment of the present application is not limited to the specific number of the arc plates 251, for example, the number of the arc plates 251 may be more than eight or less than eight, so the embodiment of the present application is not limited thereto, and a person skilled in the art may adjust the arrangement according to the actual situation. Further, the insulating ring 25 is penetrated with a limiting connection hole 252, and the limiting connection hole 252 is a stepped hole, that is, the middle aperture of the limiting connection hole 252 is smaller than the top and bottom apertures. Referring to fig. 5B in combination, the bottom of the limiting connection hole 252 may be nested at the top of the connection rod 23, so that the insulating ring 25 can be quickly positioned and installed with the plurality of connection rods 23 during the installation process, thereby improving the disassembly and maintenance efficiency. In addition, due to the fact that the insulating ring 25 is connected with the connecting rod 23 through the bolts, the top of the limiting mounting hole 242 can be used for accommodating the nuts of the bolts, so that the top surface of the insulating ring 25 is smooth, the introducing plate 22 is conveniently arranged on the insulating ring 25 in a stacked mode, and therefore the structure is simple and occupied space is reduced.
In an embodiment of the present application, as shown in fig. 7A and 7B, the cross section of the connecting rod 23 is circular or regular polygon. Specifically, the connecting rod 23 has a regular hexagonal rod-shaped structure, one end of the connecting rod 23 has an external thread for connection with a threaded hole on the lead-in ring 26, and the other end may be provided with an internal threaded hole so that the insulating ring 25 is connected with the top end of the connecting rod 23 by a screw, as shown in fig. 5B in combination. By adopting the design, the convenience of disassembly, assembly and maintenance between the connecting rod 23 and the introducing ring 26 can be greatly improved while the power uniformity is improved. The embodiment of the present application is not limited to the specific shape of the connection rod 23, and for example, the connection rod 23 may be provided in a rod-like structure having a circular or regular polygonal cross section, thereby further improving the uniformity of power transmission. Therefore, the embodiment of the application is not limited to this, and the person skilled in the art can adjust the setting according to the actual situation.
In an embodiment of the present application, as shown in fig. 1, the power supply device 1 includes a matcher 11, a first connection piece 12, a filter box 13, a second connection piece 14, a radio frequency power supply and a direct current power supply (not shown in the figure), where the radio frequency power supply is connected to an introducing rod 21 through the matcher 11 and the first connection piece 12 in sequence, for providing radio frequency power to the target 7; the dc power supply is connected to the first connection piece 12 via the filter box 13 and the second connection piece 14, and to the introduction rod 21 via the first connection piece 12, for supplying dc power to the target 7. Specifically, the power supply device 1 includes a matcher 11, a first connection piece 12, a filter box 13, a second connection piece 14, a dc power supply, and a radio frequency power supply (not shown in the figure), wherein the radio frequency power supply provides radio frequency power for the target 7 through the matcher 11. Both ends of the first connection piece 12 are respectively connected with the matcher 11 and the introduction rod 21 for introducing radio frequency power from the matcher 11 to the introduction rod 21. A direct current power source (not shown in the figure) supplies direct current power to the target 7 through the filter box 13, and the filter box 13 is connected to the first connecting piece 12 through the second connecting piece 14 to lead the direct current power from the filter box 13 to the first connecting piece 12, where the direct current power and the radio frequency power are combined, and finally reach the lead-in plate 22 through the lead-in rod 21. However, the embodiment of the present application is not limited to the specific implementation of the power supply device 1, and for example, the power supply device 1 may include only a dc power supply or a radio frequency power supply. By adopting the design, the embodiment of the application has simple structure and easy use, and the applicability and the application range of the embodiment of the application can be improved.
In an embodiment of the present application, as shown in fig. 1 to 2C, the magnetron apparatus 4 further includes a magnetron 41, a motor 43 and an insulating coupling 44, the magnetron 41 is located under the partition 241, and the transmission member 42 is disposed in the mounting hole 242 and is in transmission connection with the magnetron 41; an insulating coupling 44 is provided on the introduction plate 22, and the motor 43 is connected to the transmission member 42 through the insulating coupling 44. Specifically, the transmission component 42 is disposed above the partition 241 and is connected with the mounting hole 242 on the partition 241 in a sealing manner by a screw and a sealing ring, that is, the transmission component 42 is partially disposed in the mounting hole 242, so that a sealed accommodating space is formed between the partition 241 and the target 7, the magnetron 41 is mounted in the accommodating space, and the transmission component 42 passes through the mounting hole 242 to be connected with the magnetron 41 for driving the magnetron 41 to rotate under the driving of the motor 43. The top of the driving member 42 may pass through the through hole 222 of the introduction plate 22 so that the motor 43 can be connected thereto through the insulating coupling 44. The insulating coupling 44 can be arranged above the leading-in plate 22 and connected with the top of the transmission part 42, and the output shaft of the motor 43 is connected with the transmission part 42 through the insulating coupling 44, so that the motor can be far away from the leading-in plate 22 as far as possible by adopting the insulating coupling 44, thereby avoiding the interference of the motor 43 on the leading-in plate 22 and the connecting rod 23, and further improving the uniformity of the receiving power of the target 7.
In an embodiment of the present application, as shown in fig. 1, the upper electrode mechanism further includes a shielding sleeve 51 and a shielding plate 52, wherein the shielding sleeve 51 is sleeved on the periphery of the supporting sleeve 24; the shield plate 52 is covered on the top end of the shield sleeve 51 and is fixed to the top surface of the lead-in plate 22 by the insulating block 53, the lead-in rod 21 is connected to the lead-in plate 22 through the shield plate 52, and the motor 43 is connected to the insulating coupling 44 through the shield plate 52. Specifically, the shielding sleeve 51 and the shielding plate 52 are made of insulating materials, the shielding sleeve 51 is sleeved on the outer periphery of the supporting sleeve 24, and the bottom end of the shielding sleeve can be connected with a process chamber (not shown in the figure) of the semiconductor process equipment. The shielding plate 52 covers the top end of the shielding sleeve 51, and the shielding plate and the shielding sleeve can be fixedly connected through a screw, or can also adopt an integrally formed structure, and the embodiment of the application is not limited to this. Further, a plurality of insulating blocks 53 may be further disposed between the shielding plate 52 and the introduction plate 22, and the plurality of insulating blocks 53 are uniformly and alternately arranged around the axis of the introduction rod 21 and fixedly connected with the introduction plate 22 and the shielding plate 52, thereby further improving structural stability. The motor 43 is disposed above the shielding plate 52, and the output shaft of the motor 43 passes through the shielding plate 52 and is connected with the insulating coupling 44, and the shielding plate 52 can prevent the motor 43 from interfering with the lead-in plate 22 and the connecting rod 23. By adopting the design, the shielding sleeve 51 and the shielding plate 52 are matched together to play a role in shielding and protecting the radio frequency power, so that the safety of the embodiment of the application is improved.
In an embodiment of the present application, as shown in fig. 1 to 2C, the upper electrode mechanism further includes a cooling pipe 6, the cooling pipe 6 includes an input pipe 61 and an output pipe 62, the partition 241 is further provided with an input hole 244 and an output hole 245, one end of the input pipe 61 is used for communicating with a cooling source, the other end passes through the shielding plate 52 and is communicated with the input hole 244 for introducing a cooling medium into a space between the partition 241 and the target 7, one end of the output pipe 62 is communicated with the output hole 245, and the other end passes through the shielding plate 52 for discharging the cooling medium. Specifically, two accommodating holes 63 are further formed in the introducing plate 22, and an input hole 244 and an output hole 245 are formed in the partition 241 at positions corresponding to the two accommodating holes 63. The cooling pipeline 6 includes an input pipe 61 and an output pipe 62, where the input pipe 61 and the output pipe 62 respectively communicate with an input hole 244 and an output hole 245 on the partition plate 241 after passing through the accommodating holes 63 of the shielding plate 52 and the introducing plate 22 in sequence, and the input pipe 61 is connected with a cooling source for introducing a cooling medium into the accommodating space between the partition plate 241 and the target 7, and the output pipe 62 is used for discharging the cooling medium in the accommodating space, so that the cooling medium in the accommodating space is in a circulating flow state for continuously cooling the magnetron 41 and the target 7. By adopting the design, the embodiment of the application has reasonable structural design, thereby reducing the application and maintenance cost.
Based on the same inventive concept, an embodiment of the present application provides a semiconductor process apparatus, including: the upper electrode mechanism is arranged at the top of the process chamber.
By applying the embodiment of the application, at least the following beneficial effects can be realized:
in the embodiment of the application, the plurality of connecting rods are connected with the leading-in plate through the adjusting component and are connected with the target, and the plurality of adjusting blocks are selectively arranged to enable part of connecting rods to be connected with the leading-in plate so as to load power to the target, and part of connecting rods are not connected with the leading-in plate so as to be incapable of loading power to the target, so that the uniformity of the power received by the target is adjusted, and the power received by the target is more uniform, thereby improving the uniformity of the film thickness. In addition, as the adjusting component can selectively connect the connecting rods with the leading-in plate, whether the connecting rods are connected with the leading-in plate or not can be flexibly adjusted according to requirements so as to transmit power, so that the adjusting flexibility can be improved, the application range and the applicability of the embodiment of the application can be greatly improved, and the application and maintenance cost can be further reduced.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present application, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the application, and are also considered to be within the scope of the application.
In the description of the present application, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate description of the present application and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
The terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In the description of the present specification, a particular feature, structure, material, or characteristic may be combined in any suitable manner in one or more embodiments or examples.
While only a few embodiments of the present application have been described, it should be appreciated by those skilled in the art that many modifications and adaptations may be made without departing from the principles of the present application, and such modifications and adaptations are intended to be comprehended within the scope of the present application.

Claims (13)

1. An upper electrode mechanism of a semiconductor processing apparatus, comprising: the power supply device, the feed-in component and the adjusting component;
the feed-in assembly comprises an introduction rod, an introduction plate and a connecting rod, wherein two ends of the introduction rod are respectively connected with the power supply device and the introduction plate, and the introduction rod and the introduction plate are coaxially arranged; a plurality of connecting rods are uniformly distributed around the axis of the introducing rod, one end of each connecting rod is selectively connected with the introducing plate through the adjusting assembly, and the other end of each connecting rod is used for being connected with a target;
the adjusting assembly comprises a plurality of adjusting blocks, the adjusting blocks are arranged in one-to-one correspondence with the connecting rods and are used for selectively connecting the connecting rods with the leading-in plate so that the leading-in plate can provide power for the target through the connecting rods;
the feed-in assembly further comprises a supporting sleeve, a plurality of adjusting blocks are arranged around the periphery of the supporting sleeve, the first ends of the adjusting blocks are connected with the leading-in plates, and the second ends of the adjusting blocks extend into the side walls of the supporting sleeve and are connected with the connecting rods.
2. The upper electrode mechanism according to claim 1, wherein one end of the support sleeve is used for mounting the lead-in plate, and the lead-in plate is provided insulated from the support sleeve, and the other end of the support sleeve is used for mounting the target; the connecting rods penetrate through the side walls of the supporting sleeve.
3. The upper electrode mechanism of claim 2, wherein a partition plate extending in a radial direction is formed in the support sleeve, and a mounting hole eccentrically provided with the support sleeve is formed in the partition plate for mounting a transmission member of a magnetron device; and a plurality of connection rods located at the mounting holes are not connected with the introduction plate through the adjustment block.
4. The upper electrode mechanism of claim 1, wherein the peripheral wall at the top end of the support sleeve is provided with a plurality of mounting grooves, the mounting grooves are used for exposing part of the peripheral wall of the connecting rod, and the second ends of the adjusting blocks are positioned in the mounting grooves and are connected with the peripheral wall of the connecting rod.
5. The upper electrode mechanism of claim 4, wherein the adjustment assembly further comprises a fastener by which the first end of the adjustment block is coupled to the periphery of the intake plate; the second end of the adjusting block is connected with the peripheral wall of the connecting rod through the fastening piece.
6. The upper electrode mechanism of claim 2, wherein the feed-in assembly further comprises an insulating ring and a lead-in ring, the insulating ring being positioned between the support sleeve and the lead-in plate, one end of the connecting rod being fixedly connected with the insulating ring; the introducing ring is positioned between the supporting sleeve and the target, and the other end of the connecting rod is connected with the introducing ring and used for providing power for the target through the introducing ring.
7. The upper electrode mechanism of claim 6, wherein the insulating ring is integrally formed or is formed by arranging a plurality of arc plates with the same specification at intervals.
8. The upper electrode mechanism of any one of claims 1 to 7, wherein the connecting rod is circular or regular polygonal in cross section.
9. The upper electrode mechanism according to any one of claims 1 to 7, wherein the power supply device comprises a matcher, a first connecting piece, a filter box, a second connecting piece, a radio frequency power supply and a direct current power supply, wherein the radio frequency power supply is connected with the introducing rod through the matcher and the first connecting piece in sequence and is used for supplying radio frequency power to the target; the direct current power supply is connected with the first connecting piece through the filter box and the second connecting piece, and is connected with the introducing rod through the first connecting piece and is used for providing direct current power for the target.
10. The upper electrode mechanism of claim 3, wherein the magnetron device further comprises a magnetron, a motor and an insulating coupling, the magnetron is positioned below the partition, and the transmission part is arranged in the mounting hole and is in transmission connection with the magnetron; the insulating coupler is arranged on the introducing plate, and the motor is connected with the transmission part through the insulating coupler.
11. The upper electrode mechanism of claim 10, further comprising a shielding sleeve and a shielding plate, wherein the shielding sleeve is sleeved on the periphery of the supporting sleeve; the shielding plate covers the top end of the shielding sleeve, the shielding sleeve is fixed to the top surface of the introducing plate through the insulating block, the introducing rod penetrates through the shielding plate to be connected with the introducing plate, and the motor penetrates through the shielding plate to be connected with the insulating coupling.
12. The upper electrode mechanism of claim 11, further comprising a cooling pipeline, wherein the cooling pipeline comprises an input pipe and an output pipe, the partition plate is further provided with an input hole and an output hole, one end of the input pipe is used for being communicated with a cooling source, the other end of the input pipe penetrates through the shielding plate to be communicated with the input hole, cooling medium is introduced into a space between the partition plate and the target, one end of the output pipe is communicated with the output hole, and the other end of the output pipe penetrates through the shielding plate to be used for discharging the cooling medium.
13. A semiconductor processing apparatus, comprising: a process chamber and an upper electrode mechanism according to any one of claims 1 to 12, wherein the upper electrode mechanism is disposed on top of the process chamber.
CN202210586343.5A 2022-05-27 2022-05-27 Semiconductor process equipment and upper electrode mechanism thereof Active CN114959559B (en)

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Publication number Priority date Publication date Assignee Title
CN107090574A (en) * 2017-06-29 2017-08-25 北京北方华创微电子装备有限公司 Feed-in structure, top electrode assembly and physical vapor deposition chamber and equipment
CN207072965U (en) * 2017-06-29 2018-03-06 北京北方华创微电子装备有限公司 Feed-in structure, top electrode assembly and physical vapor deposition chamber and equipment
CN211700185U (en) * 2020-03-26 2020-10-16 北京北方华创微电子装备有限公司 Upper electrode mechanism and semiconductor processing equipment
CN114068271A (en) * 2021-11-15 2022-02-18 长鑫存储技术有限公司 Upper electrode structure and semiconductor processing equipment
CN114203511A (en) * 2021-12-10 2022-03-18 北京北方华创微电子装备有限公司 Upper electrode assembly and semiconductor process equipment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107090574A (en) * 2017-06-29 2017-08-25 北京北方华创微电子装备有限公司 Feed-in structure, top electrode assembly and physical vapor deposition chamber and equipment
CN207072965U (en) * 2017-06-29 2018-03-06 北京北方华创微电子装备有限公司 Feed-in structure, top electrode assembly and physical vapor deposition chamber and equipment
CN211700185U (en) * 2020-03-26 2020-10-16 北京北方华创微电子装备有限公司 Upper electrode mechanism and semiconductor processing equipment
CN114068271A (en) * 2021-11-15 2022-02-18 长鑫存储技术有限公司 Upper electrode structure and semiconductor processing equipment
CN114203511A (en) * 2021-12-10 2022-03-18 北京北方华创微电子装备有限公司 Upper electrode assembly and semiconductor process equipment

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