CN114927584A - Plasmon-enhanced mercury cadmium telluride infrared detector and preparation method and application thereof - Google Patents
Plasmon-enhanced mercury cadmium telluride infrared detector and preparation method and application thereof Download PDFInfo
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- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H01L31/0264—Inorganic materials
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Abstract
The invention relates to the technical field of photoelectric detectors, and discloses a plasmon-enhanced mercury cadmium telluride infrared detector and a preparation method and application thereof, wherein the infrared detector sequentially comprises a substrate, a metal reflecting layer, a passivation layer and a mercury cadmium telluride material layer from bottom to top; at least 1 metal nano structure and at least 1 pair of electrodes are distributed on the HgCdTe material layer; the thickness of the tellurium-cadmium-mercury material layer is 2100-4000 nm. The metal reflecting layer, the passivation layer, the mercury cadmium telluride material layer and the metal nano structure of the plasmon-enhanced mercury cadmium telluride infrared detector form a Fabry-Perot (F-P) resonant cavity, so that the excited radiated light waves can be kept oscillating back and forth in the resonant cavity, the light energy density and the infrared absorption range are improved, the light absorption and light response capability of the photoelectric detector is improved, and the plasmon-enhanced mercury cadmium telluride infrared detector has wide application prospect.
Description
Technical Field
The invention relates to the technical field of photoelectric detectors, in particular to a plasmon enhanced mercury cadmium telluride infrared detector and a preparation method and application thereof.
Background
With the increasing demand of human beings on photoelectric detectors, especially in recent years, there is a strong demand for new infrared exploration and intelligent sensing in the aspects of artificial intelligence, big data, smart cities and the like, and the size, weight, power consumption and price of the infrared photoelectric detectors are greatly reduced, and the performance of the detectors is improved. The size, weight, power consumption, price and performance of the traditional mercury cadmium telluride infrared detector are greatly limited all the time due to harsh refrigeration conditions. Therefore, to meet the above requirements, infrared photodetectors having revolutionary features must be sought.
Plasmonics is one of the leading edge research fields of micro-nano photonics. By means of the collective motion of the associated electrons in the solid, the plasmon can localize the electromagnetic field energy in a region far smaller than the wavelength, so that the effect of near field enhancement is achieved. Due to the strong interaction of the substance field and the electromagnetic field on the metal-dielectric interface, abundant photon state density exists near the interface, so that the plasmon can greatly enhance the light emission efficiency and the light detection efficiency.
The plasmon-enhanced infrared detector prepared by combining the plasmon and the infrared photoelectric detector can solve the problem of harsh refrigeration conditions of the traditional tellurium-cadmium-mercury infrared detector, for example, a patent named as 'a plasmon-enhanced tellurium-cadmium-mercury microcavity infrared detector and a preparation method' discloses an infrared detector with a specific hierarchical structure and thickness, although the problem of harsh refrigeration conditions is solved, the infrared detector has a narrow infrared absorption range, has strong absorption in a wavelength range of 2.5-4.5 mu m, has the maximum absorption at a position of 3.5 mu m, and cannot detect a wavelength range beyond 2.5-4.5 mu m.
Therefore, the development of the plasmon enhanced mercury cadmium telluride infrared detector with a wider infrared absorption range has important research significance.
Disclosure of Invention
The invention mainly aims to overcome the problem that the existing mercury cadmium telluride infrared detector is narrow in infrared absorption range, and provides a plasmon enhanced mercury cadmium telluride infrared detector. According to the plasmon enhanced mercury cadmium telluride infrared detector, a Fabry-Perot (F-P) resonant cavity is constructed, and excited radiated light waves are kept oscillating back and forth in the resonant cavity, so that the light energy density and the infrared absorption range of the photoelectric detector are improved, the light absorption capacity of the photoelectric detector is further enhanced, and a new method is provided for the research and development of the infrared detector.
The invention also aims to provide a preparation method of the plasmon enhanced mercury cadmium telluride infrared detector.
The invention further aims to provide application of the plasmon enhanced mercury cadmium telluride infrared detector.
In order to achieve the technical purpose, the invention is realized by the following technical scheme:
a plasmon enhanced mercury cadmium telluride infrared detector comprises a substrate, a metal reflecting layer, a passivation layer and a mercury cadmium telluride material layer from bottom to top in sequence; at least 1 metal nano structure and at least 1 pair of electrodes are distributed on the HgCdTe material layer; the thickness of the tellurium-cadmium-mercury material layer is 2100-4000 nm.
In the plasmon-enhanced mercury cadmium telluride infrared detector, the metal reflecting layer, the passivation layer, the mercury cadmium telluride material layer and the metal nano structure form a Fabry-Perot (F-P) resonant cavity, and the Fabry-Perot (F-P) resonant cavity can enable the light waves of the excited radiation to maintain back-and-forth oscillation in the resonant cavity, so that the light energy density and the infrared absorption range of the photoelectric detector are improved, and the light absorption capacity of the whole detector is enhanced.
Researches show that the thickness of a mercury cadmium telluride material layer in a Fabry-Perot (F-P) resonant cavity has a large influence on the size of an infrared absorption range of a plasmon enhanced mercury cadmium telluride infrared detector. The mercury cadmium telluride material layer with a specific thickness can further enhance the back-and-forth oscillation of the optical waves of the stimulated radiation in the resonant cavity body, and improve the optical energy density and the infrared absorption range; if the thickness of the mercury cadmium telluride material layer is less than 2100nm, the infrared absorption range of the infrared detector cannot be widened to 2500-8000 nm; if the thickness of the HgCdTe material layer is too high, the dark current of the infrared detector is too high, interference is caused to signal current, and the infrared absorption range of the infrared detector is further reduced.
In addition, the plasmon enhanced mercury cadmium telluride infrared detector does not need to work under harsh refrigeration conditions, and is favorable for widening the application range of the mercury cadmium telluride infrared detector.
The present invention does not require any particular kind of substrate material, and generally, any substrate and thickness that are conventional in the art can be used in the present invention.
Preferably, the substrate is one or more of silicon, cadmium zinc telluride, cadmium telluride, sapphire or germanium.
Preferably, the thickness of the substrate is 425-625 μm.
The invention has no special requirements on the material type and thickness of the metal reflecting layer, and the conventional metal and thickness in the field can be selected.
Preferably, the metal reflective layer is one or more of an aluminum reflective layer, a silver reflective layer, a gold reflective layer or a platinum reflective layer.
Preferably, the thickness of the metal reflecting layer is 100-300 nm.
The invention has no special requirements on the material type and thickness of the passivation layer, and the conventional insulating material and thickness in the field can be selected to form a Fabry-Perot (F-P) resonant cavity together with the metal reflecting layer, the tellurium-cadmium-mercury material layer and the metal nano structure.
Through a plurality of tests, the inventor finds that the material type and the thickness of the passivation layer hardly influence the absorption of the Fabry-Perot (F-P) resonant cavity on light waves, and hardly influence the change of the infrared absorption range of the infrared detector.
Preferably, the passivation layer is one or both of a silicon dioxide passivation layer and an aluminum oxide passivation layer.
Preferably, the thickness of the passivation layer is 200-400 nm.
The thickness of the mercury cadmium telluride material layer is used as a light absorption layer, the infrared absorption range of the infrared detector is influenced, and the increase of the thickness of the mercury cadmium telluride material layer in a specific thickness range further enhances the back-and-forth oscillation of the light wave of the excited radiation in the resonant cavity, so that the light energy density and the infrared absorption range of the infrared detector are further increased; the effect can not be achieved by too low or too high thickness of the HgCdTe material layer.
Preferably, the thickness of the tellurium-cadmium-mercury material layer is 2100-3100 nm.
The inventor finds that the change of the arrangement mode and the array period of the metal nano structure hardly influences the light absorptivity and the infrared wavelength range of the plasmon enhanced mercury cadmium telluride infrared detector in multiple test processes. However, the shape of the metal nanostructure may affect the light absorption rate and the infrared wavelength range of the infrared detector, and when the metal nanostructure is in the shape of a disk, the infrared detector may have a higher light absorption rate and an infrared wavelength range. In addition, metallic nanostructured materials commonly used in the art can be used in the present invention.
Preferably, the metal nanostructure is one or more of a disc shape, a cone shape, a funnel shape, a pyramid shape, a cross shape, a rectangle shape, a triangle shape or a diamond shape.
More preferably, the metal nanostructures are disk-shaped.
Preferably, the area of the metal nano structure is 0.1-1.2 mu m 2 The thickness is 10 to 50 nm.
Taking a disc as an example, the radius of the metal nanostructure is 200 to 600 nm.
Preferably, the metal nanostructures are arranged in an array.
More preferably, the array shape is one of a rectangle, a circle, a triangle, or a diamond.
Preferably, the number of the metal nano-structures is 1-10000.
Taking a rectangle as an example, the arrangement of the metal nanostructures can be n × m (n is an integer of 1-100, m is an integer of 1-100); the array period (the distance between the geometric centers of two adjacent metal nanostructures) of the rectangular array is 2000-10000 nm.
Preferably, the material of the metal nanostructure is one or more of a gold nanostructure, a silver nanostructure, a platinum nanostructure, or a palladium nanostructure.
The present invention has no particular requirements on the kind of the material of the electrode, and generally, electrode materials conventional in the art can be used in the present invention.
Preferably, the number of the electrodes is 1-5 pairs.
Preferably, the electrode is one or more of a chromium electrode, a gold electrode, a silver electrode or a titanium electrode.
Preferably, the thickness of the electrode is 100-150 nm.
The invention also provides a preparation method of the plasmon enhanced mercury cadmium telluride infrared detector, which comprises the following steps:
s1: depositing a metal reflective layer on a substrate;
s2: depositing a passivation layer on the surface of the metal reflecting layer;
s3: epitaxially growing a tellurium-cadmium-mercury material layer on the surface of the passivation layer;
s4: and manufacturing a metal nano structure and an electrode on the surface of the HgCdTe material layer by a micro-nano processing method to obtain the plasmon enhanced HgCdTe infrared detector.
The preparation method of the invention is to assemble the metal reflecting layer, the passivation layer, the tellurium-cadmium-mercury material layer, the metal nano structure and the electrode on the substrate in turn by a layer-by-layer assembly mode, and the assembly method of each layer is a conventional method in the field.
Preferably, the deposition method in S1 is a thermal evaporation method, an electron beam evaporation method, an ion beam assisted deposition method or metal magnetron sputtering.
Preferably, the deposition method in S2 is a chemical vapor deposition method, a molecular beam epitaxy method or a physical vapor deposition method.
Preferably, the method for epitaxial growth in S3 is a metal organic compound chemical vapor deposition method or a molecular beam epitaxy method.
Preferably, the micro-nano processing method used for the metal nano structure in S4 is an electron beam lithography method; the micro-nano processing method used for the electrode is an ultraviolet photoetching method, a near field scanning method, a laser direct writing method or an electron beam photoetching method.
The plasmon enhanced mercury cadmium telluride infrared detector has excellent light absorption capacity and can be used for preparing photoelectric devices. Therefore, the application of the plasmon enhanced mercury cadmium telluride infrared detector in the preparation of photoelectric devices also should be within the protection scope of the invention.
Compared with the prior art, the invention has the beneficial effects that:
in the plasmon-enhanced mercury cadmium telluride infrared detector provided by the invention, the metal reflecting layer, the passivation layer, the mercury cadmium telluride material layer and the metal nano structure form a Fabry-Perot (F-P) resonant cavity, so that light waves of stimulated radiation can be kept oscillating back and forth in the resonant cavity, the light energy density and the infrared absorption range of the photoelectric detector are further improved, the light absorption and light response capability of the whole detector are enhanced, and the plasmon-enhanced mercury cadmium telluride infrared detector has a wide application prospect in the photoelectric detector and related fields.
In addition, the thickness of the HgCdTe material layer in the Fabry-Perot (F-P) resonant cavity has a large influence on the size of the infrared absorption range of the plasmon enhanced HgCdTe infrared detector. The mercury cadmium telluride material layer with a specific thickness can further enhance the back-and-forth oscillation of the light waves of the stimulated radiation in the resonant cavity body, and improve the light energy density and the infrared absorption range; if the thickness of the mercury cadmium telluride material layer is less than 2100nm, the infrared absorption range of the infrared detector cannot be widened to 2500-8000 nm; if the thickness of the mercury cadmium telluride material layer is too high, the dark current of the infrared detector is too high, interference is caused to the signal current, and the infrared absorption range of the infrared detector is further reduced.
Drawings
Fig. 1 is a schematic structural diagram of the plasmon-enhanced mercury cadmium telluride infrared detector of embodiment 1.
Fig. 2 is a flow chart of the preparation of the plasmon enhanced mercury cadmium telluride infrared detector of embodiment 1.
Fig. 3 is a schematic diagram of a gold nanostructure of the plasmon-enhanced mercury cadmium telluride infrared detector of embodiment 1.
Fig. 4 is a light absorption diagram of the plasmon-enhanced mercury cadmium telluride infrared detector of the embodiment 1 and the mercury cadmium telluride infrared detector of the comparative embodiment 1.
Fig. 5 is light absorption diagrams of the plasmon-enhanced mercury cadmium telluride infrared detectors of examples 1 to 3 and comparative examples 2 to 3, wherein diagrams a and B are light absorption diagrams of the mercury cadmium telluride infrared detectors of comparative examples 2 and 3, respectively, and diagrams C, D and E are light absorption diagrams of the plasmon-enhanced mercury cadmium telluride infrared detectors of examples 2, 1, and 3, respectively.
Fig. 6 is a light absorption diagram of plasmon-enhanced mercury cadmium telluride infrared detectors under different conditions, where fig. a is a light absorption diagram of plasmon-enhanced mercury cadmium telluride infrared detectors of different gold disk array periods in examples 1 and 4 to 7, fig. B is a light absorption diagram of plasmon-enhanced mercury cadmium telluride infrared detectors of different gold disk radii in examples 1 and 8 to 11, fig. C is a light absorption diagram of plasmon-enhanced mercury cadmium telluride infrared detectors of different gold disk thicknesses in examples 1 and 12 to 15, and fig. D is a light absorption diagram of plasmon-enhanced mercury cadmium telluride infrared detectors of different passivation layer thicknesses in examples 1 and 16 to 17.
Detailed Description
The invention is further illustrated by the following examples. These examples are intended to illustrate the invention and are not intended to limit the scope of the invention. Experimental procedures without specific conditions noted in the examples below, generally according to conditions conventional in the art or as suggested by the manufacturer; the raw materials, reagents and the like used are those commercially available from conventional markets and the like unless otherwise specified. Any insubstantial changes and substitutions made by those skilled in the art based on the present invention are intended to be covered by the claims.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it is to be understood that the terms "upper", "lower", "left", "right", "top", "bottom", "inner", "outer", and the like, if any, are used in the orientations and positional relationships indicated in the drawings only for the convenience of describing the present invention and simplifying the description, but not for indicating or implying that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore the terms describing the positional relationships in the drawings are used for illustrative purposes only and are not to be construed as limiting the present patent.
Example 1
The present embodiment provides a plasmon-enhanced mercury cadmium telluride infrared detector, as shown in fig. 1, which includes, in sequence from bottom to top, a substrate 1, a metal reflective layer 2, a passivation layer 3, and a mercury cadmium telluride material layer 4; metal nano structures 5 and electrodes 6 are distributed on the tellurium-cadmium-mercury material layer 4; the metal nanostructures 5 are disc-shaped; wherein the substrate 1 is a silicon substrate with the thickness of 500 μm; the metal reflecting layer 2 is a gold reflecting layer with the thickness of 200 nm; the passivation layer 3 is a silicon dioxide passivation layer with the thickness of 300nm and the refractive index n 3 2.68; the thickness of the HgCdTe material layer 4 is 2700nm, and the refractive index n 4 The wavelength range of incident light is 2500-8000 nm (3.43); the metal nano structure 5 is a gold nano structure (gold disc) and is arranged in a rectangular array, the arrangement mode of the rectangular array is 6 multiplied by 6, the array period is 8000nm (8 mu m, as shown in figure 3), the radius is 400nm, and the thickness is 30 nm; the electrode 6 is an external symmetrical electrode with the thickness of 110nm and contains chromium and gold.
The preparation method of the plasmon-enhanced mercury cadmium telluride infrared detector, as shown in fig. 2, specifically comprises the following steps:
s1: depositing a gold reflecting layer 2 on a silicon substrate 1;
specifically, a gold reflective layer 2 having a thickness of 200nm was deposited on a silicon substrate 1 having a thickness of 500 μm by means of electron beam evaporation;
s2: depositing a silicon dioxide passivation layer 3 on the surface of the gold reflecting layer 2;
specifically, a silicon dioxide passivation layer 3 is grown on the surface of the gold reflecting layer 2 by a chemical vapor deposition method, wherein the thickness of the silicon dioxide passivation layer is 300 nm;
s3: epitaxially growing a tellurium-cadmium-mercury material layer 4 on the surface of the silicon dioxide passivation layer 3;
specifically, a tellurium-cadmium-mercury material layer 4 with the thickness of 2700nm is grown on the surface of a silicon dioxide passivation layer 3 by a molecular beam epitaxy method;
s4: (1) manufacturing a gold nanostructure 5 on the surface of the tellurium-cadmium-mercury material layer 4 by a micro-nano processing method;
specifically, the surface of the mercury cadmium telluride material layer 4 is coated with PMMA in a spinning mode, electron beam exposure is conducted, the patterns of the gold nanostructure 5 are transferred to the PMMA, a ZX238 developing solution is developed, and the patterns are further transferred to the surface of the mercury cadmium telluride material layer; depositing a gold nanostructure 5 with the thickness of 30nm and the radius of 400nm by metal magnetron sputtering, cleaning with acetone to remove the residual PMMA, washing with deionized water, and obtaining a designed gold nanostructure on the surface of the mercury cadmium telluride material layer, wherein the gold nanostructure is shown in FIG. 3;
(2) manufacturing an electrode 6 on the HgCdTe material layer by a micro-nano processing method to obtain a plasmon enhanced HgCdTe infrared detector;
specifically, AZ1500 photoresist is spin-coated on the surface of the mercury cadmium telluride material layer 4, an electrode pattern is transferred to the photoresist through laser direct writing, a chromium layer with the thickness of 10nm and a gold layer with the thickness of 100nm are deposited through thermal evaporation after development of a developing solution, residual photoresist on the surface is removed through acetone cleaning, and the photoresist is cleaned through deionized water.
Example 2
The embodiment provides a plasmon-enhanced mercury cadmium telluride infrared detector, wherein the thickness of the mercury cadmium telluride material layer is 2100nm, and the rest is the same as that in embodiment 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector is consistent with that of the embodiment 1.
Example 3
The embodiment provides a plasmon-enhanced mercury cadmium telluride infrared detector, wherein the thickness of the mercury cadmium telluride material layer is 3100nm, and the rest is the same as that in embodiment 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector in the embodiment is consistent with that in embodiment 1.
Example 4
The embodiment provides a plasmon-enhanced mercury cadmium telluride infrared detector, wherein the period of a gold nanostructure (gold disk) array is 2000nm, and the rest is the same as that of embodiment 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector in the embodiment is consistent with that in embodiment 1.
Example 5
The embodiment provides a plasmon-enhanced mercury cadmium telluride infrared detector, wherein the period of a gold nanostructure (gold disk) array is 4000nm, and the rest is consistent with that of embodiment 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector in the embodiment is consistent with that in embodiment 1.
Example 6
The present embodiment provides a plasmon-enhanced mercury cadmium telluride infrared detector, wherein the gold nanostructure (gold disk) array period is 6000nm, and the rest is the same as in embodiment 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector is consistent with that of the embodiment 1.
Example 7
This example provides a plasmon-enhanced mercury cadmium telluride infrared detector, in which the gold nanostructure (gold disk) array period is 10000nm, and the rest is the same as in example 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector in the embodiment is consistent with that in embodiment 1.
Example 8
This example provides a plasmon-enhanced mercury cadmium telluride infrared detector, in which the radius of the gold nanostructure (gold disk) is 200nm, and the rest is the same as in example 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector in the embodiment is consistent with that in embodiment 1.
Example 9
This example provides a plasmon-enhanced mercury cadmium telluride infrared detector, in which the radius of the gold nanostructure (gold disk) is 300nm, and the rest is the same as in example 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector in the embodiment is consistent with that in embodiment 1.
Example 10
The present example provides a plasmon-enhanced mercury cadmium telluride infrared detector, wherein the radius of the gold nanostructure (gold disk) is 500nm, and the rest is the same as in example 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector in the embodiment is consistent with that in embodiment 1.
Example 11
The present example provides a plasmon-enhanced mercury cadmium telluride infrared detector, wherein the radius of the gold nanostructure (gold disk) is 600nm, and the rest is the same as in example 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector is consistent with that of the embodiment 1.
Example 12
This example provides a plasmon-enhanced mercury cadmium telluride infrared detector, in which the thickness of the gold nanostructure (gold disk) is 10nm, and the rest is the same as in example 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector is consistent with that of the embodiment 1.
Example 13
This example provides a plasmon-enhanced mercury cadmium telluride infrared detector, in which the gold nanostructure (gold disk) thickness is 20nm, and the rest is the same as in example 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector in the embodiment is consistent with that in embodiment 1.
Example 14
This example provides a plasmon-enhanced mercury cadmium telluride infrared detector, in which the gold nanostructure (gold disk) thickness is 40nm, and the rest is the same as in example 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector in the embodiment is consistent with that in embodiment 1.
Example 15
The present example provides a plasmon-enhanced mercury cadmium telluride infrared detector, wherein the thickness of the gold nanostructure (gold disk) is 50nm, and the rest is the same as in example 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector in the embodiment is consistent with that in embodiment 1.
Example 16
This example provides a plasmon-enhanced mercury cadmium telluride infrared detector, in which the thickness of the passivation layer is 200nm, and the rest is the same as in example 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector is consistent with that of the embodiment 1.
Example 17
This example provides a plasmon enhanced mercury cadmium telluride infrared detector in which the passivation layer thickness is 400nm, the remainder being identical to example 1.
The preparation method of the plasmon enhanced mercury cadmium telluride infrared detector in the embodiment is consistent with that in embodiment 1.
Comparative example 1
The comparative example provides a mercury cadmium telluride infrared detector which sequentially comprises a substrate, a mercury cadmium telluride material layer and an electrode from bottom to top. The substrate is a silicon substrate, the thickness of the substrate is 500 mu m, the thickness of the tellurium-cadmium-mercury material layer is 2700nm, the incident light is 2500-8000 nm, the electrode is an external symmetrical electrode, the thickness of the electrode is 110nm, and the electrode contains chromium and gold.
The preparation method of the mercury cadmium telluride infrared detector specifically comprises the following steps:
the first step is as follows: growing a tellurium-cadmium-mercury material layer on a silicon substrate through epitaxy;
the second step is that: manufacturing an electrode on the surface of the HgCdTe material layer by a micro-nano processing method to obtain a HgCdTe infrared detector;
specifically, AZ1500 photoresist is spin-coated on the surface of the mercury cadmium telluride material layer, an electrode pattern is transferred to the photoresist through laser direct writing, a 10nm chromium layer and a 100nm gold layer are deposited through thermal evaporation after development of a developing solution, residual photoresist on the surface is removed through acetone cleaning, and the photoresist is cleaned through deionized water.
Comparative example 2
The comparative example provides a mercury cadmium telluride infrared detector, wherein the thickness of the mercury cadmium telluride material layer is 100nm, and the rest is consistent with that of the example 1.
The preparation method of the mercury cadmium telluride infrared detector in the comparative example is consistent with the preparation method of the plasmon enhanced mercury cadmium telluride infrared detector in the embodiment 1.
Comparative example 3
The comparative example provides a mercury cadmium telluride infrared detector, wherein the thickness of the mercury cadmium telluride material layer is 1100nm, and the rest is the same as that of the example 1.
The preparation method of the mercury cadmium telluride infrared detector in the comparative example is consistent with the preparation method of the plasmon enhanced mercury cadmium telluride infrared detector in the embodiment 1.
Performance test
And (3) testing the light absorption capacity of the infrared detectors prepared in the embodiments and the respective proportions, and scanning the test device by using a Fourier transform infrared spectrometer within the wavelength range of 2500-8000 nm.
Fig. 4 is a light absorption diagram of the plasmon-enhanced mercury cadmium telluride infrared detector of example 1 and the mercury cadmium telluride infrared detector of comparative example 1. As shown in fig. 4, compared with the mercury cadmium telluride infrared detector in the comparative example 1, the light absorption rate of the plasmon-enhanced mercury cadmium telluride infrared detector in the example 1 at the wavelength of 4500nm is improved by about one third, which reaches 90%; the light absorption rate at 6400nm wavelength is improved by more than one time, and the light absorption rate and the light responsivity are maximum at the moment; therefore, the Fabry-Perot (F-P) resonant cavity improves the light absorption and light response capability of the photoelectric detector.
Fig. 5 is light absorption diagrams of the plasmon-enhanced mercury cadmium telluride infrared detectors of examples 1 to 3 and comparative examples 2 to 3, wherein diagrams a and B are light absorption diagrams of the mercury cadmium telluride infrared detectors of comparative examples 2 and 3, respectively, and diagrams C, D and E are light absorption diagrams of the plasmon-enhanced mercury cadmium telluride infrared detectors of examples 2, 1, and 3, respectively. As can be seen from FIG. 5, in a specific thickness range, the thickness of the HgCdTe material layer is increased, so that the infrared absorption range of the infrared detector can be increased; when the thickness of the mercury cadmium telluride material layer reaches 2100nm, the infrared absorption range of the infrared detector can be widened to 2500-8000 nm, which indicates that the thickness of the mercury cadmium telluride material layer in the Fabry-Perot (F-P) resonant cavity has a large influence on the size of the infrared absorption range of the plasmon-enhanced mercury cadmium telluride infrared detector, which may be because the thickness of the mercury cadmium telluride material layer is enhanced, the back-and-forth oscillation of the light wave of the excited radiation in the resonant cavity can be further enhanced, and further the light energy density and the infrared absorption range are further improved.
Fig. 6 is a light absorption diagram of plasmon-enhanced mercury cadmium telluride infrared detectors under different conditions, where fig. a is a light absorption diagram of plasmon-enhanced mercury cadmium telluride infrared detectors of different gold disk array periods in examples 1 and 4 to 7, fig. B is a light absorption diagram of plasmon-enhanced mercury cadmium telluride infrared detectors of different gold disk radii in examples 1 and 8 to 11, fig. C is a light absorption diagram of plasmon-enhanced mercury cadmium telluride infrared detectors of different gold disk thicknesses in examples 1 and 12 to 15, and fig. D is a light absorption diagram of plasmon-enhanced mercury cadmium telluride infrared detectors of different passivation layer thicknesses in examples 1 and 16 to 17. As can be seen from fig. 6, the curves in graphs a-D almost overlap, indicating that the gold disk array period, gold disk radius, gold disk thickness, and passivation layer thickness hardly affect the absorption rate and infrared absorption range of the infrared detector.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. A plasmon-enhanced mercury cadmium telluride infrared detector is characterized by comprising a substrate, a metal reflecting layer, a passivation layer and a mercury cadmium telluride material layer from bottom to top in sequence; at least 1 metal nanostructure and at least 1 pair of electrodes are distributed on the HgCdTe material layer; the thickness of the tellurium-cadmium-mercury material layer is 2100-4000 nm.
2. The plasmon-enhanced mercury cadmium telluride infrared detector of claim 1 wherein the substrate is one or more of silicon, cadmium zinc telluride, cadmium telluride, sapphire or germanium.
3. The plasmon-enhanced mercury cadmium telluride infrared detector according to claim 1, wherein the metal reflective layer is one or more of an aluminum reflective layer, a silver reflective layer, a gold reflective layer, or a platinum reflective layer.
4. The plasmon-enhanced mercury cadmium telluride infrared detector according to claim 1, wherein the passivation layer is one or both of a silicon dioxide passivation layer and an aluminum oxide passivation layer.
5. The plasmon-enhanced mercury cadmium telluride infrared detector according to claim 1, wherein the thickness of the mercury cadmium telluride material layer is 2700-3100 nm.
6. The plasmon-enhanced mercury cadmium telluride infrared detector according to claim 1, wherein the metal nanostructure is one or more of a disc shape, a cone shape, a funnel shape, a pyramid shape, a cross shape, a rectangle shape, a triangle shape or a diamond shape; the metal nano structures are arranged in an array; the number of the metal nano structures is 1-10000; the metal nano structure is made of one or more of a gold nano structure, a silver nano structure, a platinum nano structure or a palladium nano structure.
7. The plasmon-enhanced mercury cadmium telluride infrared detector according to claim 1, wherein the number of the electrodes is 1-5 pairs; the electrode is one or more of a chromium electrode, a gold electrode, a silver electrode or a titanium electrode.
8. The preparation method of the plasmon-enhanced mercury cadmium telluride infrared detector as set forth in any one of claims 1 to 7, characterized by comprising the following steps:
s1: depositing a metal reflective layer on a substrate;
s2: depositing a passivation layer on the surface of the metal reflecting layer;
s3: growing a tellurium-cadmium-mercury material layer on the surface of the passivation layer through epitaxy;
s4: and manufacturing a metal nano structure and an electrode on the surface of the HgCdTe material layer by a micro-nano processing method to obtain the plasmon enhanced HgCdTe infrared detector.
9. The method for preparing the plasmon-enhanced mercury cadmium telluride infrared detector according to claim 8, wherein the deposition method in S1 is a thermal evaporation method, an electron beam evaporation method, an ion beam assisted deposition method or metal magnetron sputtering; the deposition method in the S2 is a chemical vapor deposition method, a molecular beam epitaxy method or a physical vapor deposition method; the method for epitaxial growth in S3 is a metal organic compound chemical vapor deposition method or a molecular beam epitaxy method; the micro-nano processing method used for the metal nano structure in the S4 is an electron beam lithography method; the micro-nano processing method used for the counter electrode in the S4 is an ultraviolet lithography method, a near field scanning method, a laser direct writing method or an electron beam lithography method.
10. The application of the plasmon-enhanced mercury cadmium telluride infrared detector as in any one of claims 1-7 in preparation of a photoelectric device.
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