CN114914322B - N-type monocrystalline silicon substrate shingled solar cell and manufacturing method thereof - Google Patents
N-type monocrystalline silicon substrate shingled solar cell and manufacturing method thereof Download PDFInfo
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 117
- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 141
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 141
- 239000010703 silicon Substances 0.000 claims abstract description 141
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 114
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 80
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 57
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 56
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052796 boron Inorganic materials 0.000 claims abstract description 45
- 239000000126 substance Substances 0.000 claims abstract description 45
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000011574 phosphorus Substances 0.000 claims abstract description 44
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 44
- 239000002270 dispersing agent Substances 0.000 claims abstract description 40
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 37
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 30
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000002844 melting Methods 0.000 claims abstract description 25
- 230000008018 melting Effects 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 239000000203 mixture Substances 0.000 claims abstract description 19
- 239000012535 impurity Substances 0.000 claims abstract description 15
- 238000005520 cutting process Methods 0.000 claims abstract description 13
- 230000008859 change Effects 0.000 claims abstract description 9
- 238000002834 transmittance Methods 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000010030 laminating Methods 0.000 claims abstract description 8
- 238000003466 welding Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 28
- 238000006243 chemical reaction Methods 0.000 claims description 26
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 14
- 239000005049 silicon tetrachloride Substances 0.000 claims description 14
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 14
- 239000005052 trichlorosilane Substances 0.000 claims description 14
- 239000007791 liquid phase Substances 0.000 claims description 12
- 239000000725 suspension Substances 0.000 claims description 12
- 238000004857 zone melting Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 238000001764 infiltration Methods 0.000 claims description 7
- 230000008595 infiltration Effects 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 10
- 230000006872 improvement Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 238000007493 shaping process Methods 0.000 description 5
- 238000005303 weighing Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 description 2
- 235000019402 calcium peroxide Nutrition 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000002427 irreversible effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000004005 microsphere Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
- C01B33/025—Preparation by reduction of silica or free silica-containing material with carbon or a solid carbonaceous material, i.e. carbo-thermal process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar cells, in particular to an N-type monocrystalline silicon substrate shingled solar cell and a manufacturing method thereof. Which comprises the following steps: taking 6-10 parts by weight of carbon, 12-15 parts by weight of hydrogen chloride, 6-10 parts by weight of silicon dioxide, 1-2 parts by weight of dispersing agent and 6-8 parts by weight of boron, nitrogen and phosphorus mixture; heating silicon dioxide and adding carbon to reduce the silicon to obtain crude silicon, adding hydrogen chloride, and purifying the crude silicon to obtain refined silicon; depositing refined silicon to obtain simple substance silicon, melting the simple substance silicon, adding a dispersing agent to change light transmittance, adding boron, nitrogen and phosphorus, and cooling and solidifying the simple substance silicon to form high-purity monocrystalline silicon containing boron, nitrogen and phosphorus impurities; slicing monocrystalline silicon, cutting monocrystalline silicon into a plurality of square sheets, superposing and typesetting the square sheets, welding to manufacture strings, and laminating to form laminated tiles. The invention provides an N-type monocrystalline silicon substrate shingle solar cell and a manufacturing method thereof.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to an N-type monocrystalline silicon substrate shingled solar cell and a manufacturing method thereof.
Background
The solar cell is a photoelectric semiconductor sheet which directly generates electricity by utilizing sunlight, also called a solar chip or a photocell, and can output voltage instantly and generate current under the condition of a loop as long as the illuminance of a certain illuminance condition is met.
Disclosure of Invention
The invention aims to provide an N-type monocrystalline silicon substrate shingle solar cell and a manufacturing method thereof, which are used for solving the problems in the background technology.
In order to achieve the above purpose, the invention provides an N-type monocrystalline silicon substrate shingle solar cell, which comprises a base layer, wherein a first insulating layer is attached to the lower surface of the base layer, a second insulating layer is attached to the upper surface of the base layer, and electrodes are embedded in the first insulating layer and the second insulating layer;
the base layer comprises the following raw materials in parts by weight: 6-10 parts by weight of carbon, 12-15 parts by weight of hydrogen chloride, 6-10 parts by weight of silicon dioxide, 1-2 parts by weight of dispersing agent and 6-8 parts by weight of boron, nitrogen and phosphorus mixture, wherein the weight parts of the three materials in the mixture are as follows: bx0.519+n 0.0386 ×10 15 =1.5P。
As a further improvement of the technical scheme, the first insulating layer is a silicon nitride film, the second insulating layer is an aluminum oxide film, the thicknesses of the first insulating layer and the second insulating layer are respectively 0.2-10 mm, and the electrode is one of an Ag electrode and an Al electrode.
As a further improvement of the technical scheme, the dispersing agent is an organosilicon light dispersing agent.
The manufacturing method of the N-type single crystal silicon substrate shingle solar cell comprises the steps of: the method comprises the following steps:
s1, taking a mixture of 6-10 parts by weight of carbon, 12-15 parts by weight of hydrogen chloride, 6-10 parts by weight of silicon dioxide, 1-2 parts by weight of dispersing agent and 6-8 parts by weight of boron, nitrogen and phosphorus;
s2, heating silicon dioxide by adopting a high-temperature electric furnace and adding carbon so that the silicon is reduced to obtain crude silicon, continuously adding hydrogen chloride, and purifying the crude silicon to obtain refined silicon;
s3, depositing the refined silicon for multiple times to obtain simple substance silicon, heating to enable the simple substance silicon to be molten, adding a dispersing agent to change the light transmittance of the simple substance silicon during melting, adding boron, nitrogen and phosphorus, and stopping heating to enable the simple substance silicon to be cooled and solidified to form high-purity monocrystalline silicon containing boron, nitrogen and phosphorus impurities;
s4, slicing the monocrystalline silicon, cutting the monocrystalline silicon into a plurality of square sheets, superposing and typesetting the square sheets, welding to manufacture strings, and laminating the strings to form laminated tiles.
As a further improvement of the technical scheme, in the S2, the reaction temperature in the high-temperature electric furnace is 1400 ℃, low-quality silicon dioxide in the high-temperature electric furnace is heated together with carbon, the content of the silicon dioxide is reduced by reducing the impure silicon dioxide through the carbon, so that impure elemental silicon is obtained, hydrogen chloride is added to react with crude silicon to generate silicon tetrachloride and trichlorosilane, and refined silicon is obtained by reducing the silicon tetrachloride and the trichlorosilane.
As a further improvement of the technical scheme, in the step S3, the melting temperature of the simple substance silicon is 2000 ℃, and the rod-shaped monocrystalline silicon is obtained by adopting a suspension zone melting method.
As a further improvement of the technical scheme, in the step S3, boron, nitrogen and phosphorus are uniformly distributed in the elemental silicon in a liquid phase impurity infiltration mode when the elemental silicon is melted.
As a further improvement of the technical scheme, in S4, polishing is performed on the single crystal silicon rod to remove silicon dioxide generated on the surface of the single crystal silicon rod, and the single crystal silicon rod is sliced by an inner circle cutting machine to process the single crystal silicon rod into thin wafers with precise geometric dimensions.
The invention prepares simple substance silicon by adopting silicon dioxide, the process is unidirectional and irreversible, and the reaction process is spontaneous, thereby avoiding the extraction of silicon for many times, in addition, an organic silicon light dispersing agent is added, the organic silicon light dispersing agent is a polymer microsphere which is connected by a silicon oxygen bond and has a three-dimensional structure, after the organic silicon light dispersing agent is added into monocrystalline silicon, the organic silicon light dispersing agent can be uniformly dispersed in a matrix by a fine transparent glass sphere, the light source is penetrated and refracted by the difference of refractive indexes of the organic silicon light dispersing agent and different base materials, the light advancing route is changed, the aim of uniform light and light transmission is achieved, and when the silicon dioxide is matched with organic silicon light dispersing agent, part of organic silicon light dispersing agent can form silicon dioxide when calcium dioxide is reduced, thereby increasing the purity of the monocrystalline silicon.
Compared with the prior art, the invention has the beneficial effects that:
1. since phosphorus is doped with a predetermined amount of boron and nitrogen, lattice distortion caused by phosphorus can be reliably compensated by boron, so that dislocation can be prevented from occurring when an epitaxial layer is formed on the surface of a semiconductor substrate obtained from a produced ingot. Nitrogen may promote reliable boron compensation.
2. According to the N-type monocrystalline silicon substrate shingle solar cell and the manufacturing method thereof, the light transmittance of monocrystalline silicon is improved through the dispersing agent, so that the light inlet quantity of the cell is improved, and the energy conversion efficiency of the cell can be ensured.
3. According to the N-type monocrystalline silicon substrate shingle solar cell and the manufacturing method thereof, the energy loss in the cell can be effectively reduced by adopting the cell with the shingle structure, and the output power of the cell is improved.
Detailed Description
The following description of the technical solutions in the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Embodiment 1 relates to an N-type monocrystalline silicon substrate shingled solar cell and a manufacturing method thereof, comprising:
1. weighing:
6 parts by weight of carbon, 12 parts by weight of hydrogen chloride, 6 parts by weight of silicon dioxide, 1 part by weight of dispersing agent and 6 parts by weight of boron, nitrogen and phosphorus mixture are adopted, wherein the weight parts of the three materials in the mixture are as follows: bx0.519+n 0.0386 ×10 15 =1.5P。
2. And (3) preparing silicon:
and heating silicon dioxide by adopting a high-temperature electric furnace and adding carbon so that the silicon is reduced to obtain crude silicon, continuously adding hydrogen chloride, and purifying the crude silicon to obtain refined silicon.
The reaction temperature in the high-temperature electric furnace is 1400 ℃, low-quality silicon dioxide in the high-temperature electric furnace is heated together with carbon, the content of the silicon dioxide is reduced by reducing the impure silicon dioxide through the carbon, impure elemental silicon is obtained, hydrogen chloride is added to react with crude silicon to generate silicon tetrachloride and trichlorosilane, and refined silicon is obtained by reducing the silicon tetrachloride and the trichlorosilane.
3. And (3) impurity infiltration:
and (3) carrying out multiple deposition on the refined silicon to obtain simple substance silicon, heating to enable the simple substance silicon to be molten, adding a dispersing agent to change the light transmittance of the simple substance silicon during melting, adding boron, nitrogen and phosphorus, and stopping heating to enable the simple substance silicon to be cooled and solidified to form high-purity monocrystalline silicon containing boron, nitrogen and phosphorus impurities.
The melting temperature of the simple substance silicon is 2000 ℃, rod-shaped monocrystalline silicon is obtained by adopting a suspension zone melting method, the suspension zone melting method is to generate a melting zone at one end of a simple substance silicon bar by utilizing heat energy, then a monocrystalline seed crystal is melted and connected, the temperature is regulated to enable the melting zone to slowly move towards the other end of the rod, and the rod-shaped monocrystalline silicon is grown through the whole bar, wherein the crystal orientation of the rod-shaped monocrystalline silicon is the same as that of the seed crystal.
When the elemental silicon is melted, boron, nitrogen and phosphorus are uniformly distributed in the elemental silicon in a liquid phase doping mode, wherein the liquid phase doping means that elements are doped into a region with more ions from a region with less ions until the internal and external concentrations are balanced.
4. Shaping:
slicing monocrystalline silicon, cutting monocrystalline silicon into a plurality of square sheets, superposing and typesetting the square sheets, welding to manufacture strings, and laminating to form laminated tiles.
And polishing the monocrystalline silicon rod to remove silicon dioxide generated on the surface of the monocrystalline silicon rod, slicing the monocrystalline silicon rod by an inner circle cutting machine, and processing the monocrystalline silicon rod into a thin wafer with accurate geometric dimensions.
Embodiment 2 an N-type single crystal silicon substrate shingled solar cell and a method for fabricating the same, comprising:
1. weighing:
7 parts by weight of carbon, 13 parts by weight of hydrogen chloride, 7 parts by weight of silicon dioxide, 1 part by weight of dispersing agent and 7 parts by weight of mixture of boron, nitrogen and phosphorus are taken, wherein the weight parts of the three parts in the mixture are as follows: bx0.519+nx0.0386×10 15 =1.5P。
2. And (3) preparing silicon:
and heating silicon dioxide by adopting a high-temperature electric furnace and adding carbon so that the silicon is reduced to obtain crude silicon, continuously adding hydrogen chloride, and purifying the crude silicon to obtain refined silicon.
The reaction temperature in the high-temperature electric furnace is 1400 ℃, low-quality silicon dioxide in the high-temperature electric furnace is heated together with carbon, the content of the silicon dioxide is reduced by reducing the impure silicon dioxide through the carbon, impure elemental silicon is obtained, hydrogen chloride is added to react with crude silicon to generate silicon tetrachloride and trichlorosilane, and refined silicon is obtained by reducing the silicon tetrachloride and the trichlorosilane.
3. And (3) impurity infiltration:
and (3) carrying out multiple deposition on the refined silicon to obtain simple substance silicon, heating to enable the simple substance silicon to be molten, adding a dispersing agent to change the light transmittance of the simple substance silicon during melting, adding boron, nitrogen and phosphorus, and stopping heating to enable the simple substance silicon to be cooled and solidified to form high-purity monocrystalline silicon containing boron, nitrogen and phosphorus impurities.
The melting temperature of the simple substance silicon is 2000 ℃, rod-shaped monocrystalline silicon is obtained by adopting a suspension zone melting method, the suspension zone melting method is to generate a melting zone at one end of a simple substance silicon bar by utilizing heat energy, then a monocrystalline seed crystal is melted and connected, the temperature is regulated to enable the melting zone to slowly move towards the other end of the rod, and the rod-shaped monocrystalline silicon is grown through the whole bar, wherein the crystal orientation of the rod-shaped monocrystalline silicon is the same as that of the seed crystal.
When the elemental silicon is melted, boron, nitrogen and phosphorus are uniformly distributed in the elemental silicon in a liquid phase doping mode, wherein the liquid phase doping means that elements are doped into a region with more ions from a region with less ions until the internal and external concentrations are balanced.
4. Shaping:
slicing monocrystalline silicon, cutting monocrystalline silicon into a plurality of square sheets, superposing and typesetting the square sheets, welding to manufacture strings, and laminating to form laminated tiles.
And polishing the monocrystalline silicon rod to remove silicon dioxide generated on the surface of the monocrystalline silicon rod, slicing the monocrystalline silicon rod by an inner circle cutting machine, and processing the monocrystalline silicon rod into a thin wafer with accurate geometric dimensions.
Embodiment 3 an N-type single crystal silicon substrate shingled solar cell and a method for fabricating the same, comprising:
1. weighing:
8 parts by weight of carbon, 13 parts by weight of hydrogen chloride, 8 parts by weight of silicon dioxide, 2 parts by weight of dispersing agent and 8 parts by weight of mixture of boron, nitrogen and phosphorus are taken, wherein the weight parts of the three materials in the mixture are as follows: bx0.519+n 0.0386 ×10 15 =1.5P
2. And (3) preparing silicon:
and heating silicon dioxide by adopting a high-temperature electric furnace and adding carbon so that the silicon is reduced to obtain crude silicon, continuously adding hydrogen chloride, and purifying the crude silicon to obtain refined silicon.
The reaction temperature in the high-temperature electric furnace is 1400 ℃, low-quality silicon dioxide in the high-temperature electric furnace is heated together with carbon, the content of the silicon dioxide is reduced by reducing the impure silicon dioxide through the carbon, impure elemental silicon is obtained, hydrogen chloride is added to react with crude silicon to generate silicon tetrachloride and trichlorosilane, and refined silicon is obtained by reducing the silicon tetrachloride and the trichlorosilane.
3. And (3) impurity infiltration:
and (3) carrying out multiple deposition on the refined silicon to obtain simple substance silicon, heating to enable the simple substance silicon to be molten, adding a dispersing agent to change the light transmittance of the simple substance silicon during melting, adding boron, nitrogen and phosphorus, and stopping heating to enable the simple substance silicon to be cooled and solidified to form high-purity monocrystalline silicon containing boron, nitrogen and phosphorus impurities.
The melting temperature of the simple substance silicon is 2000 ℃, rod-shaped monocrystalline silicon is obtained by adopting a suspension zone melting method, the suspension zone melting method is to generate a melting zone at one end of a simple substance silicon bar by utilizing heat energy, then a monocrystalline seed crystal is melted and connected, the temperature is regulated to enable the melting zone to slowly move towards the other end of the rod, and the rod-shaped monocrystalline silicon is grown through the whole bar, wherein the crystal orientation of the rod-shaped monocrystalline silicon is the same as that of the seed crystal.
When the elemental silicon is melted, boron, nitrogen and phosphorus are uniformly distributed in the elemental silicon in a liquid phase doping mode, wherein the liquid phase doping means that elements are doped into a region with more ions from a region with less ions until the internal and external concentrations are balanced.
4. Shaping:
slicing monocrystalline silicon, cutting monocrystalline silicon into a plurality of square sheets, superposing and typesetting the square sheets, welding to manufacture strings, and laminating to form laminated tiles.
Polishing the single crystal silicon rod to remove silicon dioxide generated on the surface of the single crystal silicon rod, slicing the single crystal silicon rod by an inner circle cutter, and processing the single crystal silicon rod into thin wafers with precise geometric dimensions
Embodiment 4 an N-type single crystal silicon substrate shingled solar cell and a method for fabricating the same, comprising:
1. weighing:
9 parts by weight of carbon, 14 parts by weight of hydrogen chloride, 9 parts by weight of silicon dioxide, 2 parts by weight of dispersing agent and 8 parts by weight of mixture of boron, nitrogen and phosphorus are taken, wherein the weight parts of the three parts in the mixture are as follows: bx0.519+n 0.0386 ×10 15 =1.5P。
2. And (3) preparing silicon:
and heating silicon dioxide by adopting a high-temperature electric furnace and adding carbon so that the silicon is reduced to obtain crude silicon, continuously adding hydrogen chloride, and purifying the crude silicon to obtain refined silicon.
The reaction temperature in the high-temperature electric furnace is 1400 ℃, low-quality silicon dioxide in the high-temperature electric furnace is heated together with carbon, the content of the silicon dioxide is reduced by reducing the impure silicon dioxide through the carbon, impure elemental silicon is obtained, hydrogen chloride is added to react with crude silicon to generate silicon tetrachloride and trichlorosilane, and refined silicon is obtained by reducing the silicon tetrachloride and the trichlorosilane.
3. And (3) impurity infiltration:
and (3) carrying out multiple deposition on the refined silicon to obtain simple substance silicon, heating to enable the simple substance silicon to be molten, adding a dispersing agent to change the light transmittance of the simple substance silicon during melting, adding boron, nitrogen and phosphorus, and stopping heating to enable the simple substance silicon to be cooled and solidified to form high-purity monocrystalline silicon containing boron, nitrogen and phosphorus impurities.
The melting temperature of the simple substance silicon is 2000 ℃, rod-shaped monocrystalline silicon is obtained by adopting a suspension zone melting method, the suspension zone melting method is to generate a melting zone at one end of a simple substance silicon bar by utilizing heat energy, then a monocrystalline seed crystal is melted and connected, the temperature is regulated to enable the melting zone to slowly move towards the other end of the rod, and the rod-shaped monocrystalline silicon is grown through the whole bar, wherein the crystal orientation of the rod-shaped monocrystalline silicon is the same as that of the seed crystal.
When the elemental silicon is melted, boron, nitrogen and phosphorus are uniformly distributed in the elemental silicon in a liquid phase doping mode, wherein the liquid phase doping means that elements are doped into a region with more ions from a region with less ions until the internal and external concentrations are balanced.
4. Shaping:
slicing monocrystalline silicon, cutting monocrystalline silicon into a plurality of square sheets, superposing and typesetting the square sheets, welding to manufacture strings, and laminating to form laminated tiles.
Polishing the single crystal silicon rod to remove silicon dioxide generated on the surface of the single crystal silicon rod, slicing the single crystal silicon rod by an inner circle cutter, and processing the single crystal silicon rod into thin wafers with precise geometric dimensions
Embodiment 5 an N-type single crystal silicon substrate shingled solar cell and a method for fabricating the same, comprising:
1. weighing:
10 parts by weight of carbon, 15 parts by weight of hydrogen chloride, 10 parts by weight of silicon dioxide, 2 parts by weight of dispersing agent and 7 parts by weight of mixture of boron, nitrogen and phosphorus are taken, wherein the weight parts of the three materials in the mixture are as follows: bx0.519+n 0.0386 ×10 15 =1.5P。
2. And (3) preparing silicon:
and heating silicon dioxide by adopting a high-temperature electric furnace and adding carbon so that the silicon is reduced to obtain crude silicon, continuously adding hydrogen chloride, and purifying the crude silicon to obtain refined silicon.
The reaction temperature in the high-temperature electric furnace is 1400 ℃, low-quality silicon dioxide in the high-temperature electric furnace is heated together with carbon, the content of the silicon dioxide is reduced by reducing the impure silicon dioxide through the carbon, impure elemental silicon is obtained, hydrogen chloride is added to react with crude silicon to generate silicon tetrachloride and trichlorosilane, and refined silicon is obtained by reducing the silicon tetrachloride and the trichlorosilane.
3. And (3) impurity infiltration:
and (3) carrying out multiple deposition on the refined silicon to obtain simple substance silicon, heating to enable the simple substance silicon to be molten, adding a dispersing agent to change the light transmittance of the simple substance silicon during melting, adding boron, nitrogen and phosphorus, and stopping heating to enable the simple substance silicon to be cooled and solidified to form high-purity monocrystalline silicon containing boron, nitrogen and phosphorus impurities.
The melting temperature of the simple substance silicon is 2000 ℃, rod-shaped monocrystalline silicon is obtained by adopting a suspension zone melting method, the suspension zone melting method is to generate a melting zone at one end of a simple substance silicon bar by utilizing heat energy, then a monocrystalline seed crystal is melted and connected, the temperature is regulated to enable the melting zone to slowly move towards the other end of the rod, and the rod-shaped monocrystalline silicon is grown through the whole bar, wherein the crystal orientation of the rod-shaped monocrystalline silicon is the same as that of the seed crystal.
When the elemental silicon is melted, boron, nitrogen and phosphorus are uniformly distributed in the elemental silicon in a liquid phase doping mode, wherein the liquid phase doping means that elements are doped into a region with more ions from a region with less ions until the internal and external concentrations are balanced.
4. Shaping:
slicing monocrystalline silicon, cutting monocrystalline silicon into a plurality of square sheets, superposing and typesetting the square sheets, welding to manufacture strings, and laminating to form laminated tiles.
And polishing the monocrystalline silicon rod to remove silicon dioxide generated on the surface of the monocrystalline silicon rod, slicing the monocrystalline silicon rod by an inner circle cutting machine, and processing the monocrystalline silicon rod into a thin wafer with accurate geometric dimensions.
The invention prepares simple substance silicon by adopting silicon dioxide, the process is unidirectional and irreversible, and the reaction process is spontaneous, thereby avoiding the extraction of silicon for many times, in addition, an organic silicon light dispersing agent is added, the organic silicon light dispersing agent is a polymer microsphere which is connected by a silicon oxygen bond and has a three-dimensional structure, after the organic silicon light dispersing agent is added into monocrystalline silicon, the organic silicon light dispersing agent can be uniformly dispersed in a matrix by a fine transparent glass sphere, the light source is penetrated and refracted by the difference of refractive indexes of the organic silicon light dispersing agent and different base materials, the light advancing route is changed, the aim of uniform light and light transmission is achieved, and when the silicon dioxide is matched with organic silicon light dispersing agent, part of organic silicon light dispersing agent can form silicon dioxide when calcium dioxide is reduced, thereby increasing the purity of the monocrystalline silicon.
According to the N-type monocrystalline silicon substrate laminated solar cell prepared by the invention, the permeability of monocrystalline silicon is changed, the light inlet quantity is improved, the energy conversion efficiency is improved, a batch of N-type monocrystalline silicon substrate laminated solar cells are respectively prepared according to examples 1-5, solar cells with the same power density are irradiated by sunlight, the conversion efficiency data of the cells, namely the output power of the cells, is calculated to be the percentage of the incident light power after one week, and the data are recorded in a table 1:
TABLE 1
As can be seen from Table 1, in examples 1 to 5, the conversion efficiency of the N-type single crystal silicon-based shingled solar cell prepared by the present invention was 22% or more, and the N-type single crystal silicon-based shingled solar cell prepared by the present invention had the highest energy conversion efficiency when 9 parts by weight of carbon, 14 parts by weight of hydrogen chloride, 9 parts by weight of silica, 2 parts by weight of a diffusing agent, and 7 parts by weight of a mixture of boron, nitrogen and phosphorus were used as the materials, and therefore the N-type single crystal silicon-based shingled solar cell prepared by examples 1 to 5 had the higher energy conversion efficiency, and the N-type single crystal silicon-based shingled solar cell prepared by the material formulation of example 4 had the highest energy conversion efficiency.
Comparative example 1
The comparative example provides an N-type monocrystalline silicon substrate shingled solar cell, which comprises the following raw materials of 9 parts by weight of carbon, 14 parts by weight of hydrogen chloride, 9 parts by weight of silicon dioxide and 6 parts by weight of boron, nitrogen and phosphorus.
In comparison with example 4, the diffusant was absent.
Comparative example 2
The comparative example provides an N-type monocrystalline silicon substrate shingled solar cell, which comprises the following raw materials of 9 parts by weight of carbon, 14 parts by weight of hydrogen chloride, 9 parts by weight of silicon dioxide, 2 parts by weight of dispersing agent, and 6 parts by weight of boron and nitrogen.
Compared to example 4, phosphorus is absent.
Comparative example 3
The comparative example provides an N-type monocrystalline silicon substrate shingled solar cell, which comprises the following raw materials of 9 parts by weight of carbon, 14 parts by weight of hydrogen chloride, 9 parts by weight of silicon dioxide, 2 parts by weight of dispersing agent and 6 parts by weight of nitrogen and phosphorus.
Boron is absent as compared to example 4.
Comparative example 4
The comparative example provides an N-type monocrystalline silicon substrate shingled solar cell, which comprises the following raw materials in parts by weight of 9 parts of carbon, 14 parts of hydrogen chloride, 9 parts of silicon dioxide, 2 parts of dispersing agent and 6 parts of boron, nitrogen and phosphorus.
Germanium was added as compared to example 4.
The N-type monocrystalline silicon substrate shingle solar cell prepared by the invention has higher energy conversion efficiency and has a larger relation with the diffusion agent, phosphorus and boron added into the N-type monocrystalline silicon substrate shingle solar cell, and in order to verify the related technical scheme, the applicant performs the following test:
comparative examples 1-3: the energy conversion efficiency of the prepared N-type single crystal silicon substrate shingled solar cell in a week was tested by the method of example 4 with the diffusant, phosphorus and boron removed separately, and the data are shown in table 2:
TABLE 2
As can be seen from table 2, in comparative examples 1 to 3, the energy conversion efficiency of the prepared N-type single crystal silicon-based shingled solar cell was significantly reduced under the condition of removing the diffusion agent, phosphorus and boron, and compared with example 4, there was a significant disadvantage, so that an important factor for improving the energy conversion efficiency of the diffusion agent, phosphorus and boron was seen.
Comparative example 4: the energy conversion efficiency data of an N-type single crystal silicon-based shingled solar cell prepared using the method of example 4 with the addition of germanium was examined and specifically shown in table 3:
TABLE 3 Table 3
According to table 3, in comparative example 4, there was no significant change in the energy conversion efficiency of one N-type single crystal silicon-based shingle solar cell prepared with the additional addition of germanium, and therefore, it can be seen that germanium has a smaller effect on changing the energy conversion efficiency of the N-type single crystal silicon-based shingle solar cell.
Experimental example 1
Comparing the above examples 1-5 with the control group, i.e., the solar cell without any improvement, the examples 1-5 and the control group were irradiated with the solar beam sealed with the same power, respectively, and after a period of time, the energy conversion data of the solar cell were measured, and the data were recorded as in table 4:
TABLE 4 Table 4
As shown in table 4, the energy conversion efficiency of the N-type single crystal silicon substrate shingled solar cell of examples 1 to 5 was significantly better than that of the control group, and thus it can be seen that the energy conversion efficiency of the N-type single crystal silicon substrate shingled solar cell prepared by the present invention was greatly improved.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the above-described embodiments, and that the above-described embodiments and descriptions are only preferred embodiments of the present invention, and are not intended to limit the invention, and that various changes and modifications may be made therein without departing from the spirit and scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (7)
1. An N-type single crystal silicon substrate shingle solar cell, characterized in that: the device comprises a base layer, wherein a first insulating layer is attached to the lower surface of the base layer, a second insulating layer is attached to the upper surface of the base layer, and electrodes are embedded in the first insulating layer and the second insulating layer;
the base layer comprises the following raw materials in parts by weight: 6-10 parts by weight of carbon, 12-15 parts by weight of hydrogen chloride, 6-10 parts by weight of silicon dioxide, 1-2 parts by weight of dispersing agent and 6-8 parts by weight of mixture of boron, nitrogen and phosphorus, wherein the weight parts of the three materials in the mixture are as follows: bx0.519+n 0.0386 ×10 15 =1.5p; the dispersing agent is an organosilicon light dispersing agent.
2. The N-type single crystal silicon-based shingled solar cell of claim 1, wherein: the first insulating layer is a silicon nitride film, the second insulating layer is an aluminum oxide film, the thicknesses of the first insulating layer and the second insulating layer are both 0.2-10 mm, and the electrode is one of an Ag electrode and an Al electrode.
3. A method for manufacturing an N-type single crystal silicon substrate shingle solar cell, comprising the N-type single crystal silicon substrate shingle solar cell as defined in claim 1 or 2, wherein: the method comprises the following steps:
s1, taking a mixture of 6-10 parts by weight of carbon, 12-15 parts by weight of hydrogen chloride, 6-10 parts by weight of silicon dioxide, 1-2 parts by weight of dispersing agent and 6-8 parts by weight of boron, nitrogen and phosphorus;
s2, heating silicon dioxide by adopting a high-temperature electric furnace and adding carbon so that the silicon is reduced to obtain crude silicon, continuously adding hydrogen chloride, and purifying the crude silicon to obtain refined silicon;
s3, depositing the refined silicon for multiple times to obtain simple substance silicon, heating to enable the simple substance silicon to be molten, adding a dispersing agent to change the light transmittance of the simple substance silicon during melting, adding boron, nitrogen and phosphorus, and stopping heating to enable the simple substance silicon to be cooled and solidified to form high-purity monocrystalline silicon containing boron, nitrogen and phosphorus impurities;
s4, slicing the monocrystalline silicon, cutting the monocrystalline silicon into a plurality of square sheets, superposing and typesetting the square sheets, welding to manufacture strings, and laminating the strings to form laminated tiles.
4. The method for manufacturing the N-type single crystal silicon substrate shingled solar cell according to claim 3, wherein: in the step S2, the reaction temperature in the high-temperature electric furnace is 1400 ℃, low-quality silicon dioxide in the high-temperature electric furnace is heated together with carbon, the content of the silicon dioxide is reduced by reducing the impure silicon dioxide through the carbon, so that impure elemental silicon is obtained, hydrogen chloride is added to react with crude silicon to generate silicon tetrachloride and trichlorosilane, and the silicon tetrachloride and the trichlorosilane are reduced to obtain refined silicon.
5. The method for manufacturing the N-type single crystal silicon substrate shingled solar cell according to claim 3, wherein: in the step S3, the melting temperature of the simple substance silicon is 2000 ℃, and the rod-shaped monocrystalline silicon is obtained by adopting a suspension zone melting method.
6. The method for manufacturing the N-type single crystal silicon substrate shingled solar cell according to claim 3, wherein: in the step S3, boron, nitrogen and phosphorus are uniformly distributed in the elemental silicon in a liquid phase impurity infiltration mode when the elemental silicon is melted.
7. The method for manufacturing the N-type single crystal silicon substrate shingled solar cell according to claim 3, wherein: in the step S4, polishing the monocrystalline silicon rod to remove silicon dioxide generated on the surface of the monocrystalline silicon rod, slicing the monocrystalline silicon rod by an inner circle cutting machine, and processing the monocrystalline silicon rod into a thin wafer with accurate geometric dimensions.
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| US4124410A (en) * | 1977-11-21 | 1978-11-07 | Union Carbide Corporation | Silicon solar cells with low-cost substrates |
| CN101426722A (en) * | 2006-03-15 | 2009-05-06 | 反应科学公司 | Method for making silicon for solar cells and other applications |
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