CN109023509A - A method of preparing solar level n type single crystal silicon - Google Patents
A method of preparing solar level n type single crystal silicon Download PDFInfo
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- CN109023509A CN109023509A CN201811011445.4A CN201811011445A CN109023509A CN 109023509 A CN109023509 A CN 109023509A CN 201811011445 A CN201811011445 A CN 201811011445A CN 109023509 A CN109023509 A CN 109023509A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The invention discloses a kind of method for preparing solar level n type single crystal silicon, silicon raw material addition is placed in the silica crucible of single crystal growing furnace by (1), and position is put into N-type master alloy and gallium among silicon raw material；(2) single crystal growing furnace closes, and vacuumizes leak detection, heating and melting, throws device again and throws silicon raw material, heating and melting again；(3) cooling stablizes, looks for power, seed crystal melt, seeding, shouldering, turns shoulder, isometrical, ending, obtains first with monocrystal rod, is pulled to the cooling of auxiliary furnace of mono-crystal chamber, the heat preservation of single crystal growing furnace residual liquid；(4) weighing is taken out after monocrystal rod is cooling；(5) device is thrown again and be packed into composite feeding-material, and be put into N-type master alloy and gallium at the intermediate position of silicon raw material；(6) heating and melting, cooling stablize, look for power, seed crystal melt, seeding, shouldering, turn shoulder, is isometrical, finish up, cooling second monocrystal rod；Appropriate gallium is added in initial charge, preferably neutralizes phosphorus, effectively improves the concentration degree of n type single crystal silicon resistivity, to improve the resistance qualification rate of solar energy.
Description
Technical field
The present invention relates to a kind of preparation methods of monocrystalline silicon, and in particular to a kind of side for preparing solar level n type single crystal silicon
Method belongs to monocrystalline silicon field, and the resistance for n type single crystal silicon controls.
Background technique
Monocrystaline silicon solar cell has high-efficient, the good feature of stability, industrialization p-type monocrystaline silicon solar cell
Efficiency is generally between 20~21%, and with the continuous improvement that solar battery efficiency requires, the continuous development of battery technology is right
Monocrystalline silicon piece is put forward higher requirements, and the efficiency of n type single crystal silicon solar battery can reach 22%-23%, and future is efficient
Battery process must use N-type monocrystalline, such as HII just to need using n type single crystal silicon, while common boron-doping p type single crystal silicon has
Efficiency attenuation problem, N-shaped monocrystalline silicon will become the mainstream of future market；
The resistivity of solar level monocrystalline require 1-3 Ω cm or near, different from the resistance of 50-100 Ω cm of power device
Rate range；P-type and n type single crystal silicon the difference is that dopant difference, p type single crystal silicon often uses boron and gallium as doping
Agent, the fractional condensation system 0.8 or so of boron, the resistivity contrasts of solar level monocrystal rod end to end are smaller, on a 0.9 ohmcm left side
The right side, but there is photo attenuation in boron, and the p-type monocrystalline of gallium is mixed, and since the fractional condensation system of gallium only has 0.008, solar level list
It is 2.5 ohmcms or so between the resistivity zone end to end of crystal bar, the most commonly used is phosphorus as dopant, the fractional condensation system of phosphorus for N-type monocrystalline
Number 0.35, and N-type resistivity is more sensitive to the concentration difference in crystal, the resistivity end to end of p-doped N-type solar level monocrystal rod
Difference is 2.1-2.3 ohmcm, and battery blade technolgy is between resistance more demanding the resistivity zone of single crystal silicon substrate, narrower
The corresponding higher battery conversion efficiency in rate section；Therefore, how to reduce between the resistivity zone of solar level N-type monocrystal rod is to have to
It solves the problems, such as.
It proposes to be initially added phosphorus and boron in the patent of Patent No. CN104746134A, be cut by the adverse effect of boron and phosphorus
The section of weak phosphorus base N-type resistivity, though this method has certain effect, the segregation coefficient of boron is much larger than phosphorus, as crystal is raw
It is long, increase the increasing speed not as good as phosphorus of the boron in melt, therefore boron cannot effectively improve the low resistance that the phosphorus in later period generates,
To be effectively reduced between resistivity zone；
It proposes in the n type single crystal silicon growth course melt of base phosphorus, is gradually added in the patent of Patent No. CN105951173A
The p-type of base boron pointedly improves the content of the boron in later period melt, to neutralize more and more phosphorus in melt, gradually plus
The master alloy for entering boron controls the amount of doping by control insertion melt amount using one spillikin of insertion, but also deposits simultaneously
There is disturbance in a control problem, and to the flowing and temperature field of melted silicon, influences the yield rate of monocrystalline；This patent is also needle
To power device；
It is proposed to listen in melt in the initial single crystal silicon growth system of base phosphorus in the patent of Patent No. CN106795647A, the later period by
The master alloy of boron is added in step, but equally has disturbance to melt in this way, influences the normal growth of monocrystalline, and the boron that the later period is added needs
Certain time is wanted to homogenize, it is unfavorable that this controls resistivity；
The patent of Patent No. CN105887194A is used for power device, proposes to listen in the initial single crystal silicon growth system of base phosphorus molten
In liquid, the later period is gradually added the master alloy of gallium, but equally has disturbance to melt in this way, influences the normal growth of monocrystalline, Er Qiehou
The gallium that phase is added needs certain time to homogenize, and it is unfavorable that this controls resistivity；
The above practice is try to carry out the anti-phosphorus for mixing " neutralization " N-type by p-type master alloy, such as boron and gallium, make the resistance of N-type
Rate section reduces, and but there are the following problems: for solar level electrical resistivity range, the master alloy of boron is added at the beginning, it cannot
Problem between resistivity zone is efficiently solved, and the master alloy of boron is added in melt in the process, can disturb melt, or even melt not in time
The solid master alloy of change flows towards solid liquid interface to make crystal growth fail；For power device, although having patent to mention uses gallium
It adulterates in the process, and thinks that being initially added gallium is unfavorable for accurately controlling, but the electrical resistivity range excessive 50-100 of power device
Ω cm, much larger than the 1-3 Ω cm of solar energy, belonging to for power device is gently mixed, and doping is considerably less, and control precision influences result
It is larger；
For above-mentioned described deficiency, a kind of electricity for effectively reducing solar level n type single crystal silicon that can overcome disadvantages described above is researched and developed
Resistance rate section is those skilled in the art's technical problem urgently to be resolved.
Summary of the invention
The technical problem to be solved by the present invention is to, the shortcomings that overcoming the prior art, provides and a kind of prepare solar level N-type
The method of monocrystalline silicon, this method is simple and easy, and appropriate gallium is added in initial charge, since the segregation coefficient of gallium is small compared with phosphorus,
The growth rate of gallium concentration in later period melt preferably neutralizes phosphorus far faster than phosphorus, effective raising n type single crystal silicon resistivity
Concentration degree, thus improve solar energy and resistance qualification rate.
In order to solve the above technical problems, the present invention provides a kind of method for preparing solar level n type single crystal silicon, it is specific to wrap
Include following steps:
Step (1): silicon raw material addition is placed in the silica crucible of the main heating chamber of single crystal growing furnace, meanwhile, in silicon raw material middle part
Position is put into N-type master alloy and gallium；
Step (2): single crystal growing furnace is closed, be evacuated to 40mtorr hereinafter, and hunted leak, heating and melting 4.5H, then utilize
Device is thrown again and throws silicon raw material again, continues heating and melting；
Step (3): after thawing, carrying out cooling and stablize, look for power, seed crystal melt, seeding, shouldering, turn shoulder, isometrical, ending,
First monocrystal rod is obtained, it is cooling that monocrystal rod is pulled to auxiliary furnace of mono-crystal chamber, while the main heating chamber residual liquid of single crystal growing furnace is given
Fixed certain power heat preservation；
Step (4): the monocrystal rod that step (3) obtains is taken out and weighs after auxiliary furnace of mono-crystal chamber is cooling；
Step (5): throwing device is fitted into composite feeding-material and continues to add silicon raw material into single crystal growing furnace again, meanwhile, at the intermediate position of silicon raw material
It is put into N-type master alloy and gallium；
Step (6): step (5) feed intake after carry out heating and melting, cooling stablize, look for power, seed crystal melt, seeding, shouldering, turn
Shoulder, isometrical, ending, it is cooling to obtain second monocrystal rod.
The technical solution that the present invention further limits is:
Further, in the aforementioned method for preparing solar level n type single crystal silicon, raw material is that solar energy is superfine or electronic-grade silicon is former
Material.
In the aforementioned method for preparing solar level n type single crystal silicon, N-type master alloy described in step (1) and step (5) is equal
For the N-type master alloy of 30# base phosphorus.
In the aforementioned method for preparing solar level n type single crystal silicon, the silica crucible in step (1) is using 28 inches of quartzy earthenwares
Crucible.
In the aforementioned method for preparing solar level n type single crystal silicon, the concrete operations of step (2) are as follows: being evacuated to
For 40mtorr hereinafter, automatic leak detection, slip think that leak detection is qualified lower than 40mtorr/h, starting pressure is filled with argon gas and vacuum
Pressure control in furnace is thrown into target weight after melting 4.5H in 1600-2600pa, heating and melting again, continues to melt extremely by valve
Terminate；
The concrete operations of heating and melting are as follows: the first heating and melting 1H at 30KW；Then the heating and melting 1H at 60KW, it is rear to maintain
Heating and melting 2.5H under 90KW.
In the aforementioned method for preparing solar level n type single crystal silicon, the main heating chamber residual liquid of single crystal growing furnace is given in step (3)
Fixed certain power heat preservation, power 55-65KW.
In the aforementioned method for preparing solar level n type single crystal silicon, step (4) monocrystal rod is in the cooling 1h of auxiliary furnace of mono-crystal chamber.
In the aforementioned method for preparing solar level n type single crystal silicon, cooling is stablized in step (3) and (6), and equilibrium temperature makes seed
In 1-3mm/min, shouldering starts to turn shoulder brilliant seeding speed control to diameter 195-205mm, subsequently into the isometrical stage, from
Seeding starts, and crystalline substance switchs to 12 turns, and crucible switchs to 10 turns, and crystalline substance turns anti-with crucible phase inversion.
In the aforementioned method for preparing solar level n type single crystal silicon, electrical path lengths control exists when isometrical in step (6) etc.
4170mm。
The beneficial effects of the present invention are:
Compared to the prior art, it is try to carry out the anti-phosphorus for mixing " neutralization " N-type by p-type master alloy, such as boron and gallium mostly,
Make to reduce between the resistivity zone of N-type, but there are the following problems: for solar level electrical resistivity range, boron being added at the beginning
Master alloy cannot efficiently solve problem between resistivity zone, and the master alloy of boron is added in melt in the process, can disturb melt,
The solid master alloy even melted not in time flows towards solid liquid interface to make crystal growth fail；For power device, although having
Patent is mentioned to be adulterated in the process with gallium, and thinks that being initially added gallium is unfavorable for accurately controlling, but the resistivity model of power device
Excessive 50-100 Ω cm is enclosed, much larger than the 1-3 Ω cm of solar energy, belonging to for power device is gently mixed, and doping is considerably less, control
Precision is affected to result；The present invention proposes the side that appropriate gallium is added in initial charge for solar level N-type monocrystalline
Method, since the segregation coefficient of gallium is small compared with phosphorus, the growth rate of the gallium concentration in later period melt is far faster than phosphorus, to make in preferably
And phosphorus.
Phosphorus and gallium of the present invention are initially being co-doped with the concentration degree that N-type resistivity can be improved, to make the resistance of solar level
Qualification rate position is increased to 97% by fractional condensation ratio qualification rate 80%, since pulling of crystals has ending and flavoring food, thus segregates
Qualification substantially meets the requirement of pulling of crystals at ratio 97%, will not be because of resistivity effects yields.
Detailed description of the invention
Fig. 1 is that the embodiment of the present invention initially feeds intake middle addition phosphorus (master alloy of phosphorus) and gallium co-doped and only in the preparation
The resistivity curve figure of p-doped (master alloy of phosphorus).
Specific embodiment
Embodiment 1
A kind of method preparing solar level n type single crystal silicon provided in this embodiment, specifically includes the following steps:
Step (1): silicon raw material addition is placed in 28 inches of silica crucibles of the main heating chamber of single crystal growing furnace, meanwhile, in silicon raw material
Intermediate position is put into the N-type master alloy and gallium of 30# base phosphorus；
Step (2): single crystal growing furnace is closed, be evacuated to 40mtorr hereinafter, and hunted leak, heating and melting 4.5H, then utilize
Device is thrown again and throws silicon raw material again, continues heating and melting, specifically:
40mtorr is evacuated to hereinafter, automatic leak detection, slip think that leak detection is qualified lower than 40mtorr/h, starting pressure is filled
Enter argon gas and vacuum valve, pressure control in furnace is thrown into target weight after melting 4.5H in 1600-2600pa, heating and melting again
Amount continues to melt to terminating；
The concrete operations of heating and melting are as follows: the first heating and melting 1H at 30KW；Then the heating and melting 1H at 60KW, it is rear to maintain
Heating and melting 2.5H under 90KW；
Step (3): after thawing, carrying out cooling and stablize, look for power, seed crystal melt, seeding, shouldering, turn shoulder, isometrical, ending,
First monocrystal rod is obtained, it is cooling that monocrystal rod is pulled to auxiliary furnace of mono-crystal chamber, while the main heating chamber residual liquid of single crystal growing furnace is given
Fixed certain power 65KW heat preservation；
Step (4): the monocrystal rod that step (3) obtains is taken out and weighs after the cooling 1h of auxiliary furnace of mono-crystal chamber；
Step (5): throwing device is fitted into composite feeding-material and continues to add silicon raw material into single crystal growing furnace again, meanwhile, at the intermediate position of silicon raw material
It is put into the N-type master alloy and gallium of 30# base phosphorus；
Step (6): step (5) feed intake after carry out heating and melting, cooling stablize, look for power, seed crystal melt, seeding, shouldering, turn
Shoulder, isometrical, ending, it is cooling to obtain second monocrystal rod.
In the present embodiment, silicon raw material is solar energy superfine or electronic grade feedstock silicon too；The electrical path lengths such as when isometrical in step (6)
Control is in 4170mm.
In the present embodiment, step (3) and (6) middle cooling are stablized, and equilibrium temperature makes the seeding speed control of seed crystal exist
3mm/min, shouldering starts to turn shoulder to diameter 195mm, and subsequently into the isometrical stage, since seeding, crystalline substance switchs to 12 turns, and crucible turns
It is 10 turns, crystalline substance turns anti-with crucible phase inversion.
Embodiment 2
A kind of specific embodiment of method preparing solar level n type single crystal silicon provided in this embodiment, specifically includes following step
It is rapid:
Step (1): solar energy superfine or electronic grade feedstock silicon too 250KG are added to 28 inches of stones for being placed in the main heating chamber of single crystal growing furnace
In English crucible, meanwhile, position is put into 114 grams and 1.5 grams of gallium of N-type master alloy of 30# base phosphorus among silicon raw material；
Step (2): single crystal growing furnace is closed, be evacuated to 40mtorr hereinafter, and hunted leak, heating and melting 4.5H, then utilize
Device is thrown again and throws silicon raw material 120KG again, continues heating and melting, specifically:
40mtorr is evacuated to hereinafter, automatic leak detection, slip think that leak detection is qualified lower than 40mtorr/h, starting pressure is filled
Enter argon gas and vacuum valve, pressure control in furnace is thrown into target weight after melting 4.5H in 1600-2600pa, heating and melting again
Amount continues to melt to terminating；
The concrete operations of heating and melting are as follows: the first heating and melting 1H at 30KW；Then the heating and melting 1H at 60KW, it is rear to maintain
Heating and melting 2.5H under 90KW；
Step (3): after thawing, carrying out cooling and stablize, look for power, seed crystal melt, seeding, shouldering, turn shoulder, isometrical, ending,
First monocrystal rod is obtained, it is cooling that monocrystal rod is pulled to auxiliary furnace of mono-crystal chamber, while the main heating chamber residual liquid of single crystal growing furnace is given
Fixed certain power 55KW heat preservation；
Step (4): the monocrystal rod that step (3) obtains is taken out after the cooling 1h of auxiliary furnace of mono-crystal chamber, is weighed as 310KG；
Step (5): throwing device is fitted into composite feeding-material and continues to add silicon raw material into single crystal growing furnace again, adds up 310KG, meanwhile, in silicon raw material
Intermediate position be put into 30# base phosphorus 63 grams of N-type master alloy and 0.5 gram of gallium；
Step (6): step (5) feed intake after carry out heating and melting, cooling stablize, look for power, seed crystal melt, seeding, shouldering, turn
Shoulder, isometrical, ending, it is cooling to obtain second monocrystal rod.
In the present embodiment, electrical path lengths control is in 4170mm when isometrical in step (6) etc..
In the present embodiment, step (3) and (6) middle cooling are stablized, and equilibrium temperature makes the seeding speed control of seed crystal exist
1mm/min, shouldering starts to turn shoulder to diameter 205mm, and subsequently into the isometrical stage, since seeding, crystalline substance switchs to 12 turns, and crucible turns
It is 10 turns, crystalline substance turns anti-with crucible phase inversion.
Two in the present embodiment solar energy for wanting the resistivity of the live part (equal-diameter part) of monocrystal rod to meet 1-3 Ω cm
Silicon requirements.
Step (1) of the invention joined suitable phosphorus (master alloy of phosphorus) and gallium (simple substance) in initially feeding intake, and only mix
The resistivity curve of phosphorus (master alloy of phosphorus) and initial phosphorus and gallium (simple substance) co-doped is as shown in Figure 1, Fig. 1 is p-doped (phosphorus
Master alloy) and initial phosphorus and gallium (simple substance) co-doped resistivity curve, therefrom it can be seen that, phosphorus and gallium are initially co-doped with
The concentration degree of N-type resistivity can be improved, to make the resistance qualification rate position of solar level by fractional condensation ratio qualification rate 80%
It is increased to 97%.Since pulling of crystals has ending and flavoring food, thus segregates qualification at ratio 97% and substantially meet pulling of crystals
Requirement, will not be because of resistivity effects yields.
In addition to the implementation, the present invention can also have other embodiments.It is all to use equivalent substitution or equivalent transformation shape
At technical solution, fall within the scope of protection required by the present invention.
Claims (9)
1. a kind of method for preparing solar level n type single crystal silicon, which is characterized in that specifically includes the following steps:
Step (1): silicon raw material addition is placed in the silica crucible of the main heating chamber of single crystal growing furnace, meanwhile, in silicon raw material middle part
Position is put into N-type master alloy and gallium；
Step (2): single crystal growing furnace is closed, be evacuated to 40mtorr hereinafter, and hunted leak, heating and melting 4.5H, then utilize
Device is thrown again and throws silicon raw material again, continues heating and melting；
Step (3): after thawing, carrying out cooling and stablize, look for power, seed crystal melt, seeding, shouldering, turn shoulder, isometrical, ending,
First monocrystal rod is obtained, it is cooling that monocrystal rod is pulled to auxiliary furnace of mono-crystal chamber, while the main heating chamber residual liquid of single crystal growing furnace is given
Fixed certain power heat preservation；
Step (4): the monocrystal rod that step (3) obtains is taken out and weighs after auxiliary furnace of mono-crystal chamber is cooling；
Step (5): throwing device is fitted into composite feeding-material and continues to add silicon raw material into single crystal growing furnace again, meanwhile, at the intermediate position of silicon raw material
It is put into N-type master alloy and gallium；
Step (6): step (5) feed intake after carry out heating and melting, cooling stablize, look for power, seed crystal melt, seeding, shouldering, turn
Shoulder, isometrical, ending, it is cooling to obtain second monocrystal rod.
2. the method according to claim 1 for preparing solar level n type single crystal silicon, it is characterised in that: the raw material is
Solar energy superfine or electronic grade feedstock silicon too.
3. the method according to claim 1 for preparing solar level n type single crystal silicon, it is characterised in that: step (1) and step
(5) the N-type master alloy described in is the N-type master alloy of 30# base phosphorus.
4. the method according to claim 1 for preparing solar level n type single crystal silicon, it is characterised in that: the stone in step (1)
English crucible uses 28 inches of silica crucibles.
5. the method according to claim 1 for preparing solar level n type single crystal silicon, it is characterised in that: step (2) it is specific
It operates as follows: being evacuated to 40mtorr hereinafter, automatic leak detection, slip think that leak detection is qualified lower than 40mtorr/h, start pressure
Power is filled with argon gas and vacuum valve, and pressure control in furnace is thrown into mesh after melting 4.5H in 1600-2600pa, heating and melting again
Indicated weight amount continues to melt to terminating；
The concrete operations of heating and melting are as follows: the first heating and melting 1H at 30KW；Then the heating and melting 1H at 60KW, it is rear to maintain
Heating and melting 2.5H under 90KW.
6. the method according to claim 1 for preparing solar level n type single crystal silicon, it is characterised in that: monocrystalline in step (3)
The main heating chamber residual liquid of furnace gives certain power heat preservation, and the power is 55-65KW.
7. the method according to claim 1 for preparing solar level n type single crystal silicon, it is characterised in that: step (4) monocrystal rod
In the cooling 1h of auxiliary furnace of mono-crystal chamber.
8. the method according to claim 1 for preparing solar level n type single crystal silicon, it is characterised in that: step (3) and (6)
Middle cooling is stablized, and equilibrium temperature makes the seeding speed control of seed crystal in 1-3mm/min, and shouldering starts to turn to diameter 195-205mm
Shoulder, subsequently into the isometrical stage, since seeding, crystalline substance switchs to 12 turns, and crucible switchs to 10 turns, and crystalline substance turns anti-with crucible phase inversion.
9. the method according to claim 1 for preparing solar level n type single crystal silicon, it is characterised in that: isometrical in step (6)
When etc. electrical path lengths control in 4170mm.
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Cited By (8)
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| CN110396715A (en) * | 2019-09-04 | 2019-11-01 | 内蒙古中环光伏材料有限公司 | A kind of pulling of crystals repeatedly throws technique again |
| CN111368434A (en) * | 2020-03-05 | 2020-07-03 | 包头美科硅能源有限公司 | Prediction method of Czochralski method monocrystalline silicon solid-liquid interface based on ANN |
| CN112553683A (en) * | 2020-11-03 | 2021-03-26 | 上海新昇半导体科技有限公司 | Material melting method for crystal growth |
| CN112760704A (en) * | 2020-12-28 | 2021-05-07 | 晶澳太阳能有限公司 | Boron-gallium co-doped single crystal preparation equipment and preparation method thereof |
| CN114016122A (en) * | 2021-10-29 | 2022-02-08 | 包头美科硅能源有限公司 | Method for improving conversion efficiency of large-size N-type silicon wafer |
| CN114059152A (en) * | 2021-11-19 | 2022-02-18 | 包头美科硅能源有限公司 | Gallium element doping method for producing silicon single crystal rod by Czochralski method |
| CN114914322A (en) * | 2022-05-18 | 2022-08-16 | 一道新能源科技(衢州)有限公司 | N-type monocrystalline silicon substrate laminated solar cell and manufacturing method thereof |
| CN115341269A (en) * | 2021-05-13 | 2022-11-15 | 内蒙古中环协鑫光伏材料有限公司 | Pulling process of phosphorus-gallium co-doped single crystal |
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| CN114059152A (en) * | 2021-11-19 | 2022-02-18 | 包头美科硅能源有限公司 | Gallium element doping method for producing silicon single crystal rod by Czochralski method |
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